WO2017198764A1 - Dispositif et procédé pour mesurer des épaisseurs et des indices de réfraction de couches sur des surfaces rugueuses et lisses - Google Patents

Dispositif et procédé pour mesurer des épaisseurs et des indices de réfraction de couches sur des surfaces rugueuses et lisses Download PDF

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Publication number
WO2017198764A1
WO2017198764A1 PCT/EP2017/061964 EP2017061964W WO2017198764A1 WO 2017198764 A1 WO2017198764 A1 WO 2017198764A1 EP 2017061964 W EP2017061964 W EP 2017061964W WO 2017198764 A1 WO2017198764 A1 WO 2017198764A1
Authority
WO
WIPO (PCT)
Prior art keywords
sample
measurement
measuring
contact surface
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2017/061964
Other languages
German (de)
English (en)
Inventor
Friedrich Paul WITEK
Helge Ketelsen
Uwe Richter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sentech Instruments GmbH
Original Assignee
Sentech Instruments GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sentech Instruments GmbH filed Critical Sentech Instruments GmbH
Publication of WO2017198764A1 publication Critical patent/WO2017198764A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means

Definitions

  • the invention relates to a device and method for measuring layer thicknesses and refractive indices of layers on rough and smooth surfaces.
  • Laser ellipsometry and spectroscopic ellipsometry has to work with very low reflectivities (typically 1% and much smaller) due to the wide variety of rough silicon surfaces (microcrystalline, alkaline or acid etched, sawn and polished or even plasma etched).
  • the deposited layers e.g., Si 3 N 4 or Al 2 O 3
  • the deposited layers provide for layer stresses that occur at sample thicknesses of e.g. 0.5 mm for bulges of e.g. 2 mm height at e.g. 156 mm sample size.
  • a precise position of the sample to the measuring system is a prerequisite. Position tolerances of about 20 ⁇ and tilts less than 3 arc minutes are typical requirements.
  • ambient light is coupled in addition to the light from the transmitter of the ellipsometer
  • Fig. 1 Reflection on rough surface in ellipsometry
  • Fig. 2 Measurement on surface with two light sources
  • Fig. 3 Spectra for measuring light and ambient light
  • Fig. 8 Mean LD and SC for surface texture assessment
  • Fig. 9 Stray measurement as a sensor for the detection of the structure of the sample; Combination of scattered light measurement or diffraction measurement with ellipsometric measurement
  • the ellipsometer consists of a transmitter with light source and a receiver with detector (spectral or at a wavelength) which at an oblique angle of incidence (e.g., 65 ° to the sample normal) reflects the reflection from
  • the concrete execution of the ellipsometric transmitter and receiver is not limited here.
  • the solar cells have a rough surface (see Fig. 1), which is illuminated by the Eilipsometer transmitter via an optional focus lens L1 with an opening angle A.
  • Receiver of the ellipsometer detects the reflected light from the sample via an optional focus lens L2 in a solid angle B.
  • the roughness typically reflects light in a much larger solid angle C and the proportion in B of the total light in C is much smaller.
  • the solid angles of the transmitter and receiver change without changing the principle.
  • the roughnesses common in prior art solar cells have feature sizes S of e.g. 10 ⁇ in microcrystalline Si solar cells up to e.g. 300 nm at plasma-etched surfaces. For this reason, the recognition of the surface structure for the measurement is valuable as additional information. The possibility of additional scattering and / or diffraction behavior in the
  • the emitter of the ellipsometer uses a light source Q1 (e.g., a solar cell xenon lamp)
  • the ambient sources Q2 are e.g. Sunlight or fluorescent tubes of the lighting of production halls above.
  • the invention in one embodiment utilizes the sample itself as a means of blocking the ambient light.
  • the positioning of the sample on the metering device of the measuring system and the opening X in the depositing device makes it possible for the light Q1 to be guided from below onto the side of the sample lying on the depositing device.
  • the meter has a box B containing a transmitter S and a receiver E.
  • a further embodiment can also connect the transmitter S and the receiver E to the outside of the box B (so that the ambient light Q2 is likewise shielded by the receiver E).
  • the box is an embodiment with a storage device, here the sample support D.
  • the sample P is placed on the sample support surface D with the side to be measured.
  • the sample support D has an opening X which is made large enough to allow the measuring beam T1 emanating from the transmitter S to illuminate the sample at the measuring location.
  • the opening X must also be made large enough, the light reflected in the receiver E T2
  • the sample P must have sufficient absorption to adequately shield the ambient light Q2 for undisturbed ellipsometer measurement. Furthermore, the sample P must be at least so large that the opening X is completely closed.
  • An advantageous embodiment uses, for example, a 10 mm wide slot with 40 mm in length with 8 mm thickness of the support and 156 mm solar cells made of silicon with a thickness of 500 ⁇ .
  • the sample P is brought by the support surface D without additional adjustment in the correct position to the measuring system - the usual adjustment for height and tilt is thus avoided.
  • the sample P is placed on the support D with the side to be measured.
  • the surface D is here aligned to Eilipsometer so that when measured surface from P to D, a measurement is correct.
  • a means W presses the sample P flat onto the support surface D.
  • the means W can be the hand of an operator who presses the sample during a measurement (typically 10 seconds).
  • the pressure by the means W may also be automatic (e.g., motor, pneumatic, magnetic, gravity with gravity).
  • the pressure means W may also be attached to the bridge W above the sample P in the embodiment.
  • the sample P is pressed plane-parallel to the support D in the region of the measuring position.
  • the device can let the light of the light source Q1 through the transmitter S through the opening X without sample also upwards out of the device.
  • An embodiment of the device with a light source of high-intensity Xe light can have a carcinogenic effect on skin contact or, in the case of eye contact, can lead to blindness.
  • a bridge R above the sample is provided with a fixed blocking means K.
  • the means K is placed at a distance so that no harmful light reaches the user.
  • the means K is designed as a light trap, so that the reflection for the protective purpose is sufficiently reduced (choice of material, surface structuring).
  • the device contains an additional means for assessing the surface structure by means of scattering and / or diffraction (see FIG. 8).
  • the roughness of the surface is advantageously taken into account in the ellipsometric measuring method.
  • the manufacturing process are on a sample location or
  • the device includes an additional means LD and SC which assess the scattering and diffraction behavior of the sample P before the measurement and the
  • the means LD can e.g. be a laser diode or parallel polychromatic light.
  • the means SC detected in one of the
  • the means SC can be a combination of a measuring screen with an observing camera or also directly the detector chip of a video camera.
  • An exemplary embodiment uses a laser light with red light (e.g., 670 nm) with a parallel beam of light to illuminate the sample P.
  • red light e.g., 670 nm
  • parallel beam of light e.g., 5 cm
  • Diameter detects the scattered and diffracted image at a distance of approx. 10 cm after reflection at an angle of 45 degrees.
  • a camera captures the image on the screen and sends it to the computer for evaluation.
  • the different crystal orientations in the measuring field can be identified by characteristic scattering patterns as in Fig. 9.
  • the patterns (e.g., M1 and M2 in Figure 9) can be quickly recorded and evaluated prior to measurement. Since many surface types can occur in the solar industry, the detection algorithm is not underdeveloped.
  • Fig. 9 shows by way of example how a spreading pattern can be used.
  • "tilt to the right” and “tilt to the left” are used to detect two crystal orientations. This information can then be used to evaluate the measurement (e.g., to reflect the orientation of the rough cells or their feature size into the ellipsometric model).
  • the angle of incidence of the light from the center LD on the sample is not limited to angles as in Fig. 9.
  • the angle of incidence can vary between 0 and 90 degrees, the advantageous angle is selected according to the application.
  • the ellipsometer may e.g. use the roughness so determined directly for the ellipsometric model (e.g., determine thickness of roughness, determine depolarization of the measuring light by the sample),
  • both the model for ellipsometry can be selected (e.g., a distribution function of surface segments), and the scattering ratios (e.g., Rayleigh or Mie scattering) included in the analysis.
  • the surface at least one
  • Fingerprint method are classified. In such cases, the assignment between the intensity profile in the image with a mathematical structural model is application specific.
  • An embodiment may also be used with another device for simultaneous measurement of the other sample side.
  • Modern solar cells (such as the PERC type) are coated on both the front and the back. It is advantageous if you can measure the coatings on both sides of the sample simultaneously.
  • the device according to the above illustrations can be equipped with further ellipsometer assemblies S2 and E2 as well as further light source Q1b and a further detector in or connected to module E2.
  • a further advantageous embodiment can share the light source Q1 and the detectors SP via optical fibers LL1 to LL4 between the two devices, which is particularly advantageous when designed as a spectroscopic ellipsometer.
  • the measuring box B can also be integrated into an automatic transport system for an inline measurement in a further embodiment.
  • the sample storage, the measurement start and the result storage are fully automatic in this case.
  • the invention can also be used for the measurement of samples with pyramidal structure. This embodiment applies the sample at an angle (e.g., 55 degrees) in the same manner:
  • the sample shields the ambient light
  • sample support D is slanted by one (optional depending on the embodiment)

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

L'invention concerne un dispositif pour positionner un échantillon à mesurer par polarimétrie, ellipsométrie, réflectométrie ou diffractométrie au moyen d'un système de mesure. L'échantillon peut être positionné sur un dispositif de réception, en particulier sur une surface de contact du système de mesure, ledit dispositif de réception présentant au moins une ouverture (X) par laquelle la lumière de mesure peut être dirigée sur le côté de l'échantillon se trouvant sur le dispositif de réception.
PCT/EP2017/061964 2016-05-20 2017-05-18 Dispositif et procédé pour mesurer des épaisseurs et des indices de réfraction de couches sur des surfaces rugueuses et lisses Ceased WO2017198764A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016208804.1 2016-05-20
DE102016208804 2016-05-20

Publications (1)

Publication Number Publication Date
WO2017198764A1 true WO2017198764A1 (fr) 2017-11-23

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Family Applications (1)

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PCT/EP2017/061964 Ceased WO2017198764A1 (fr) 2016-05-20 2017-05-18 Dispositif et procédé pour mesurer des épaisseurs et des indices de réfraction de couches sur des surfaces rugueuses et lisses

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WO (1) WO2017198764A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000057127A1 (fr) * 1999-03-22 2000-09-28 Sensys Instruments Corporation Procede et appareil de metrologie de plaquette
US20010027080A1 (en) * 1999-01-25 2001-10-04 Applied Materials, Inc., Delaware Corporation Method and apparatus for determining polishing endpoint with multiple light sources
US20010050765A1 (en) * 1998-10-09 2001-12-13 Keith Antonelli Fingerprint image optical input apparatus
JP2012032239A (ja) * 2010-07-29 2012-02-16 Horiba Ltd 試料検査装置及び試料検査方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010050765A1 (en) * 1998-10-09 2001-12-13 Keith Antonelli Fingerprint image optical input apparatus
US20010027080A1 (en) * 1999-01-25 2001-10-04 Applied Materials, Inc., Delaware Corporation Method and apparatus for determining polishing endpoint with multiple light sources
WO2000057127A1 (fr) * 1999-03-22 2000-09-28 Sensys Instruments Corporation Procede et appareil de metrologie de plaquette
JP2012032239A (ja) * 2010-07-29 2012-02-16 Horiba Ltd 試料検査装置及び試料検査方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOPORI B ET AL: "A reflectance spectroscopy-based tool for high-speed characterization of silicon wafers and solar cells in commercial production", 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 20-25 JUNE 2010, HONOLULU, HI, USA, IEEE, PISCATAWAY, NJ, USA, 20 June 2010 (2010-06-20), pages 2238 - 2241, XP031785996, ISBN: 978-1-4244-5890-5 *

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