WO2017207898A3 - Photocathode à nanofils et méthode de fabrication d'une telle photocathode - Google Patents

Photocathode à nanofils et méthode de fabrication d'une telle photocathode Download PDF

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Publication number
WO2017207898A3
WO2017207898A3 PCT/FR2017/051321 FR2017051321W WO2017207898A3 WO 2017207898 A3 WO2017207898 A3 WO 2017207898A3 FR 2017051321 W FR2017051321 W FR 2017051321W WO 2017207898 A3 WO2017207898 A3 WO 2017207898A3
Authority
WO
WIPO (PCT)
Prior art keywords
photocathode
iii
nanowires
face
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2017/051321
Other languages
English (en)
Other versions
WO2017207898A2 (fr
Inventor
Claude ALIBERT
Moustapha CONDE
Jean-Christophe Harmand
Théo JEGOREL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Photonis France SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Photonis France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Photonis France SAS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to KR1020187034878A priority Critical patent/KR102419131B1/ko
Priority to JP2018562635A priority patent/JP7033556B2/ja
Priority to US16/305,669 priority patent/US11043350B2/en
Priority to EP17731230.3A priority patent/EP3465725B1/fr
Publication of WO2017207898A2 publication Critical patent/WO2017207898A2/fr
Publication of WO2017207898A3 publication Critical patent/WO2017207898A3/fr
Priority to IL263234A priority patent/IL263234B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/04—Electrodes
    • H01J40/06—Photo-emissive cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

L'invention concerne une photocathode comprenant un substrat amorphe, tel qu'un substrat en verre (110) présentant une face d'entrée destinée à recevoir des photons incidents et une face arrière opposée à la face d'entrée. Des nanofils (120) réalisés en au moins un matériau semi-conducteur lll-V sont déposés sur la face arrière du substrat et s'étendent à partir de cette face dans une direction opposée à la face d'entrée. La composition des nanofils présente une variation radiale du rapport des éléments du matériau lll-V de manière à obtenir un gradient de bande interdite dirigé du coeur des nanofils vers leur périphérie. L'invention concerne également une méthode de fabrication par MBE d'une telle photocathode. Pendant la phase de croissance des nanofils, les flux des matériaux composant le matériau semi-conducteur lll-V sont variés de manière à obtenir un matériau présentant une bande interdite plus large au début de la phase de croissance qu'à la fin de cette même phase.
PCT/FR2017/051321 2016-05-31 2017-05-29 Photocathode à nanofils et méthode de fabrication d'une telle photocathode Ceased WO2017207898A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020187034878A KR102419131B1 (ko) 2016-05-31 2017-05-29 나노와이어를 갖는 광음극 및 이러한 광음극의 생산 방법
JP2018562635A JP7033556B2 (ja) 2016-05-31 2017-05-29 ナノワイヤを伴うフォトカソードの製造方法
US16/305,669 US11043350B2 (en) 2016-05-31 2017-05-29 Photocathode with nanowires and method of manufacturing such a photocathode
EP17731230.3A EP3465725B1 (fr) 2016-05-31 2017-05-29 Méthode de fabrication d'une photocathode à nanofils
IL263234A IL263234B2 (en) 2016-05-31 2018-11-22 A photocathode with nanowires and a method for producing such a photocathode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1654896A FR3051963B1 (fr) 2016-05-31 2016-05-31 Photocathode a nanofils et methode de fabrication d'une telle photocathode
FR1654896 2016-05-31

Publications (2)

Publication Number Publication Date
WO2017207898A2 WO2017207898A2 (fr) 2017-12-07
WO2017207898A3 true WO2017207898A3 (fr) 2018-01-25

Family

ID=57136980

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2017/051321 Ceased WO2017207898A2 (fr) 2016-05-31 2017-05-29 Photocathode à nanofils et méthode de fabrication d'une telle photocathode

Country Status (8)

Country Link
US (1) US11043350B2 (fr)
EP (1) EP3465725B1 (fr)
JP (1) JP7033556B2 (fr)
KR (1) KR102419131B1 (fr)
FR (1) FR3051963B1 (fr)
IL (1) IL263234B2 (fr)
TW (1) TWI747907B (fr)
WO (1) WO2017207898A2 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281337B (zh) * 2018-03-23 2024-04-05 中国工程物理研究院激光聚变研究中心 光电阴极及x射线诊断系统
JP6958827B1 (ja) * 2020-05-20 2021-11-02 国立大学法人静岡大学 光電陰極及び光電陰極の製造方法
CN112530768B (zh) * 2020-12-21 2024-02-27 中国计量大学 一种高量子效率的纳米阵列光电阴极及其制备方法
CN113964003A (zh) * 2021-10-09 2022-01-21 电子科技大学长三角研究院(湖州) 一种具有纳米管结构的GaN光电阴极及其制备方法
CN115763191B (zh) * 2022-11-24 2025-04-18 中国科学院西安光学精密机械研究所 共振增强光吸收的纳米颗粒结构光电阴极及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908355B2 (en) * 2001-11-13 2005-06-21 Burle Technologies, Inc. Photocathode
US20130207075A1 (en) * 2010-08-26 2013-08-15 The Ohio State University Nanoscale emitters with polarization grading
CN103594302A (zh) * 2013-11-19 2014-02-19 东华理工大学 一种GaAs纳米线阵列光阴极及其制备方法

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JP2001143648A (ja) 1999-11-17 2001-05-25 Hitachi Ltd 光励起電子線源および電子線応用装置
JP2006302610A (ja) 2005-04-19 2006-11-02 Hamamatsu Photonics Kk 半導体光電陰極
JP2008135350A (ja) 2006-11-29 2008-06-12 Hamamatsu Photonics Kk 半導体光電陰極
US20100180950A1 (en) * 2008-11-14 2010-07-22 University Of Connecticut Low-temperature surface doping/alloying/coating of large scale semiconductor nanowire arrays
WO2011152459A1 (fr) * 2010-06-03 2011-12-08 株式会社Si-Nano Dispositif d'accumulation d'électricité optique
US10090425B2 (en) * 2012-02-21 2018-10-02 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US9478385B2 (en) * 2013-11-26 2016-10-25 Electronics And Telecommunications Research Institute Field emission device having field emitter including photoelectric material and method of manufacturing the same
CN104752117B (zh) * 2015-03-03 2017-04-26 东华理工大学 一种垂直发射AlGaAs/GaAs纳米线的NEA电子源
CA2923897C (fr) * 2015-03-16 2023-08-29 Zetian Mi Photocathodes et photoelectrodes doubles destinees aux dispositifs photoniques nanofilaires
FR3034908B1 (fr) 2015-04-08 2017-05-05 Photonis France Photocathode multibande et detecteur associe
US9818894B2 (en) * 2015-09-02 2017-11-14 Physical Optics Corporation Photodetector with nanowire photocathode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908355B2 (en) * 2001-11-13 2005-06-21 Burle Technologies, Inc. Photocathode
US20130207075A1 (en) * 2010-08-26 2013-08-15 The Ohio State University Nanoscale emitters with polarization grading
CN103594302A (zh) * 2013-11-19 2014-02-19 东华理工大学 一种GaAs纳米线阵列光阴极及其制备方法

Non-Patent Citations (7)

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JEAN-CHRISTOPHE HARMAND: "Growth of nanowires", PULSE SUMMER SCHOOL, PORQUEROLLES, FRANCE, 14-18 SEPTEMBER 2015, 17 September 2015 (2015-09-17), XP055404904, Retrieved from the Internet <URL:https://pulse-school.sciencesconf.org/conference/pulse-school/pages/Harmand_Pulse_School_Porquerolles_Harmand.pdf> [retrieved on 20170907] *
KUMARESAN V ET AL: "Self-induced growth of vertical GaN nanowires on silica", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 27, no. 13, 19 February 2016 (2016-02-19), pages 135602, XP020300302, ISSN: 0957-4484, [retrieved on 20160219], DOI: 10.1088/0957-4484/27/13/135602 *
PAVAN KUMAR KASANABOINA ET AL: "Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy", SEMICONDUCTOR SCIENCE AND TECHNOLOGY., vol. 30, no. 10, 21 September 2015 (2015-09-21), GB, pages 105036, XP055404669, ISSN: 0268-1242, DOI: 10.1088/0268-1242/30/10/105036 *
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Also Published As

Publication number Publication date
IL263234B1 (en) 2023-04-01
TW201810695A (zh) 2018-03-16
FR3051963A1 (fr) 2017-12-01
KR102419131B1 (ko) 2022-07-08
IL263234B2 (en) 2023-08-01
IL263234A (en) 2018-12-31
JP2019523522A (ja) 2019-08-22
WO2017207898A2 (fr) 2017-12-07
TWI747907B (zh) 2021-12-01
US20200328056A1 (en) 2020-10-15
US11043350B2 (en) 2021-06-22
EP3465725B1 (fr) 2023-09-27
EP3465725A2 (fr) 2019-04-10
FR3051963B1 (fr) 2020-12-25
KR20190013800A (ko) 2019-02-11
JP7033556B2 (ja) 2022-03-10

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