WO2017209376A3 - 탄화규소 단결정 잉곳의 성장장치 및 그 성장방법 - Google Patents

탄화규소 단결정 잉곳의 성장장치 및 그 성장방법 Download PDF

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Publication number
WO2017209376A3
WO2017209376A3 PCT/KR2017/001939 KR2017001939W WO2017209376A3 WO 2017209376 A3 WO2017209376 A3 WO 2017209376A3 KR 2017001939 W KR2017001939 W KR 2017001939W WO 2017209376 A3 WO2017209376 A3 WO 2017209376A3
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WO
WIPO (PCT)
Prior art keywords
crucible
growth
single crystal
growth apparatus
crystal ingot
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Ceased
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PCT/KR2017/001939
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English (en)
French (fr)
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WO2017209376A2 (ko
Inventor
이희춘
최이식
김태희
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Sapphire Technology Co Ltd
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Sapphire Technology Co Ltd
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Publication of WO2017209376A2 publication Critical patent/WO2017209376A2/ko
Publication of WO2017209376A3 publication Critical patent/WO2017209376A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

저항 가열 히터 내부의 도가니 위치를 이동시켜 온도구배를 유지함에 의해 성장 길이를 증대할 수 있는 탄화규소(SiC) 단결정 잉곳의 성장장치 및 그 성장방법이 개시되어 있다. 탄화규소 단결정 잉곳의 성장장치는 탄화규소(SiC) 분말로 이루어진 소스가 하부에 충진되어 있으며, 상부에 탄화규소 단결정 시드가 장착되어 탄화규소 단결정 잉곳이 성장되는 도가니에 하부로부터 일정 높이 이상으로 갈수록 온도의 하강 폭이 증가하는 특성을 갖고 도가니를 가열하는 저항 가열 히터를 도가니로부터 이격된 외주에 설치되어 있으며, 도가니 무빙 시스템에 의해 탄화규소 단결정 잉곳의 성장에 연동하여 도가니 내부의 온도 구배 감소를 보상하도록 도가니를 상승시킨다.
PCT/KR2017/001939 2016-05-30 2017-02-22 탄화규소 단결정 잉곳의 성장장치 및 그 성장방법 Ceased WO2017209376A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0066766 2016-05-30
KR1020160066766A KR101816109B1 (ko) 2016-05-30 2016-05-30 탄화규소 단결정 잉곳의 성장장치 및 그 성장방법

Publications (2)

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WO2017209376A2 WO2017209376A2 (ko) 2017-12-07
WO2017209376A3 true WO2017209376A3 (ko) 2018-09-07

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KR (1) KR101816109B1 (ko)
WO (1) WO2017209376A2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10724796B2 (en) * 2018-05-24 2020-07-28 Silfex, Inc Furnace for casting near-net shape (NNS) silicon
CN110135097B (zh) * 2019-05-23 2022-08-16 西南交通大学 一种确定铁路隧道坡度折减系数的方法
DE102019215575A1 (de) * 2019-10-10 2021-04-15 Siltronic Ag Vorrichtung und Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial
KR102305774B1 (ko) * 2019-12-27 2021-09-30 주식회사 에스에프에이 실리콘 카바이드 단결정 성장장치
CN111041554B (zh) * 2020-01-16 2021-05-25 江苏大学 一种用于晶硅铸锭炉的载气导流装置及其导流方法
KR102235858B1 (ko) 2020-04-09 2021-04-02 에스케이씨 주식회사 탄화규소 잉곳의 제조방법 및 탄화규소 잉곳 제조용 시스템
KR102236396B1 (ko) 2020-05-29 2021-04-02 에스케이씨 주식회사 탄화규소 잉곳의 제조방법 및 탄화규소 잉곳 제조용 시스템
CN115404538B (zh) * 2022-07-20 2023-08-22 中国电子科技集团公司第二十六研究所 一种可实现晶体连续生长的装置
CN116497437B (zh) * 2023-06-25 2023-08-18 通威微电子有限公司 一种碳化硅生长装置和生长方法
CN117328133A (zh) * 2023-10-09 2024-01-02 通威微电子有限公司 液相法生长碳化硅晶体的装置
CN117779178B (zh) * 2023-12-26 2024-09-03 通威微电子有限公司 碳化硅晶体生长装置和方法
CN118668294B (zh) * 2024-06-20 2025-02-28 江苏汉印机电科技股份有限公司 一种碳化硅气相外延反应系统
CN118581564B (zh) * 2024-08-06 2024-12-03 上海新昇半导体科技有限公司 拉晶炉拉晶控制方法、控制装置及电子设备
CN119800509A (zh) * 2025-01-02 2025-04-11 山西天成半导体材料有限公司 一种碳化硅晶体生长炉及晶体生长方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06183897A (ja) * 1992-12-16 1994-07-05 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長方法
KR20110088689A (ko) * 2010-01-29 2011-08-04 (주)코원에프아이에스 실리콘 단결정 잉곳 형성장치용 가열로 승하강 유닛 및 이를 구비한 실리콘 단결정 잉곳 형성장치
KR20110120617A (ko) * 2010-04-29 2011-11-04 한국화학연구원 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치
KR20120130125A (ko) * 2011-05-20 2012-11-29 쇼와 덴코 가부시키가이샤 단결정 제조 장치, 단결정 제조 방법 및 단결정
KR101404519B1 (ko) * 2012-12-06 2014-06-10 주식회사 에스이엠 사파이어 단결정 성장장치의 도가니 승강기구
KR20150054486A (ko) * 2013-11-12 2015-05-20 주식회사 썸백 저항 가열방식을 이용한 단결정 승화장치 및 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06183897A (ja) * 1992-12-16 1994-07-05 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長方法
KR20110088689A (ko) * 2010-01-29 2011-08-04 (주)코원에프아이에스 실리콘 단결정 잉곳 형성장치용 가열로 승하강 유닛 및 이를 구비한 실리콘 단결정 잉곳 형성장치
KR20110120617A (ko) * 2010-04-29 2011-11-04 한국화학연구원 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치
KR20120130125A (ko) * 2011-05-20 2012-11-29 쇼와 덴코 가부시키가이샤 단결정 제조 장치, 단결정 제조 방법 및 단결정
KR101404519B1 (ko) * 2012-12-06 2014-06-10 주식회사 에스이엠 사파이어 단결정 성장장치의 도가니 승강기구
KR20150054486A (ko) * 2013-11-12 2015-05-20 주식회사 썸백 저항 가열방식을 이용한 단결정 승화장치 및 방법

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KR20170135218A (ko) 2017-12-08
WO2017209376A2 (ko) 2017-12-07
KR101816109B1 (ko) 2018-01-08

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