WO2018113236A1 - 有机电致发光显示面板及其制作方法、显示装置 - Google Patents

有机电致发光显示面板及其制作方法、显示装置 Download PDF

Info

Publication number
WO2018113236A1
WO2018113236A1 PCT/CN2017/090529 CN2017090529W WO2018113236A1 WO 2018113236 A1 WO2018113236 A1 WO 2018113236A1 CN 2017090529 W CN2017090529 W CN 2017090529W WO 2018113236 A1 WO2018113236 A1 WO 2018113236A1
Authority
WO
WIPO (PCT)
Prior art keywords
display panel
metal layer
pixel
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/090529
Other languages
English (en)
French (fr)
Inventor
张粲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US15/742,350 priority Critical patent/US20190088726A1/en
Publication of WO2018113236A1 publication Critical patent/WO2018113236A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8052Cathodes
    • H10K59/80522Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8723Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/8791Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the present disclosure relates to an organic electroluminescence display panel, a method of fabricating the same, and a display device.
  • OLED Organic Electroluminescence Display
  • FIG. 1a shows a pixel structure using a top emission (TE) mode. Since the thickness of the cathode 01 in the top emission mode is thin, generally 10-30nm, which results in a large resistance, such as 30-50 ⁇ / ⁇ , when the screen size of the mobile phone is large, the problem of voltage drop (IR drop) is particularly prominent, IR drop will cause different areas of current Differences, and in turn, display unevenness when displayed.
  • 02 is a base substrate
  • 03 is a pixel drive circuit (array) structural layer
  • 04 is an anode
  • 05 is a pixel defining layer
  • 06 is an organic functional layer.
  • RGB pixels emit light to both sides, which causes reactive power loss, which in turn affects the display quality of the OLED.
  • FIG. 1b when the emission region of red light is scattered to the emission region of blue light or green light, crosstalk phenomenon of RGB pixel illumination may be caused, and the display quality of the OLED may also be affected.
  • Embodiments of the present disclosure provide an organic electroluminescence display panel, a method for fabricating the same, and a display device.
  • the organic electroluminescence display panel can reduce the problem of voltage drop (IR drop), thereby improving the display effect of the OLED.
  • At least one embodiment of the present disclosure provides an organic electroluminescence display panel including: a substrate substrate; a pixel defining layer and a first electrode disposed on the substrate; wherein The pixel defining layer includes at least one opening region corresponding to the sub-pixel of the organic electroluminescent display panel, and a pixel separator surrounding the opening region; the pixel spacer is provided with a metal layer, the metal layer Electrically connected to the first electrode.
  • the metal layer is disposed above the first electrode and in direct contact with the first electrode.
  • the organic electroluminescent display panel provided by at least one embodiment of the present disclosure may further include: a light absorbing layer disposed on the metal layer.
  • the metal layer is disposed between every two adjacent sub-pixels.
  • the thickness of the metal layer is
  • the metal layer is a continuous strip structure or a segmented strip structure.
  • the thickness of the light absorbing layer is
  • the material of the light absorbing layer is a silicon-based nitride.
  • the first electrode is a cathode of the organic electroluminescence display panel.
  • At least one embodiment of the present disclosure further provides a method of fabricating the above-described organic electroluminescent display panel, comprising: providing a substrate; forming a pixel defining layer and a first electrode on the substrate, wherein the pixel is defined
  • the layer includes at least one opening region corresponding to the sub-pixel of the organic electroluminescent display panel, and a pixel separator surrounding the opening region; forming an electrical connection with the first electrode on the pixel spacer Metal layer.
  • a first electrode is formed on the substrate by an evaporation process.
  • forming a metal layer electrically connected to the first electrode on the pixel spacer includes: forming a metal layer on the pixel spacer by a plating process.
  • the manufacturing method provided in at least one embodiment of the present disclosure may further include: after the forming the metal layer electrically connected to the first electrode on the pixel spacer, by using a sputtering process or a chemical vapor deposition process A light absorbing layer is formed on the metal layer.
  • At least one embodiment of the present disclosure also provides a display device including any of the above organic electroluminescent display panels.
  • 1a is a schematic cross-sectional view of an organic electroluminescent display panel
  • FIG. 1b is a schematic diagram showing crosstalk phenomenon of an organic electroluminescence display panel
  • FIG. 2a is a top view of an organic electroluminescent display panel according to an embodiment of the present disclosure
  • Figure 2b is a schematic cross-sectional view taken along line A-A' of Figure 2a;
  • FIG. 3 is a top plan view of still another organic electroluminescent display panel according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of a metal layer reflecting light rays according to an embodiment of the present disclosure
  • FIG. 5 is a schematic cross-sectional view of an organic electroluminescent display panel according to an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of absorption of light by a light absorbing layer according to an embodiment of the present disclosure
  • FIG. 7 is a top plan view of still another organic electroluminescent display panel according to an embodiment of the present disclosure.
  • FIG. 8 is a flowchart of a method for fabricating an organic electroluminescence display panel according to an embodiment of the present disclosure
  • FIG. 9 is a flowchart of a method for fabricating another organic electroluminescent display panel according to an embodiment of the present disclosure.
  • 10a to 10d are schematic cross-sectional views of a method for fabricating an organic electroluminescence display panel after each step is performed according to an embodiment of the present disclosure.
  • each pattern in the organic electroluminescent display panel according to an embodiment of the present disclosure is usually on the order of micrometers or less in an actual product, and for the sake of clarity, the dimensions of each structure in the drawings of the embodiments of the present disclosure are Magnification, unless explicitly stated otherwise, does not represent actual size and proportion.
  • the organic electroluminescent display panel includes: a substrate substrate 1 disposed on the substrate substrate 1
  • the pixel defining layer 2 and the first electrode 4 eg, a cathode
  • the pixel separator 22 surrounding the opening region
  • a metal layer 3 is disposed on the pixel separator 22, and the metal layer 3 is electrically connected to the first electrode 4.
  • 5 is a pixel drive circuit (array) structure layer
  • 6 is a second electrode (for example, an anode) of the organic electroluminescence display panel
  • 7 is an organic functional layer of the organic electroluminescence display panel, for example,
  • the organic functional layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron blocking layer, and the like.
  • the cathode of an organic electroluminescent display panel is prepared from a thin, transparent metal material.
  • metals such as aluminum and magnesium.
  • the cathode formed by the above material has a large electrical resistance, and the resistance of the cathode can be reduced by connecting the metal layers in parallel. It should be noted that the resistance of the anode can also be reduced by paralleling the metal layer. The following is mainly explained by electrically connecting the cathode and the metal layer to reduce the cathode resistance.
  • the resistance of the metal layer 3 is R 1 and the resistance of the cathode 4 is R 2 , which corresponds to the parallel connection of R 1 and R 2
  • the metal layer 3 since the metal layer 3 has high reflectivity, the light emitted by the sub-pixel is reflected to the outside through the side of the metal layer, so that the light-mixing area is reduced, and the adjacent sub-pixels can be improved when the sub-pixel is illuminated.
  • the crosstalk of the light reduces the reactive power loss, thereby improving the display effect of the OLED.
  • the metal layer in order to electrically connect the metal layer and the cathode, as shown in FIG. 2b, the metal layer is located above the cathode and directly in contact with the cathode, so that It is ensured that the resistance after paralleling is reduced, thereby improving the problem of IR drop, and there is no problem of display unevenness during display due to a large voltage drop.
  • the cathode may be disposed above the metal layer, and the cathode is in direct contact with the metal layer, and the metal layer is directly disposed on the pixel separator. This also ensures that the resistance after paralleling is reduced, thereby improving the problem of IR drop without causing display unevenness due to a large voltage drop.
  • the metal layer 3 serves as a branch of the voltage signal and the first electrode 4 At the same time, the voltage signal is transmitted, so that the first electrode 4 and the metal layer 3 form a parallel circuit, which reduces the resistance during the electrical signal transmission process, or the metal layer 3 first receives the voltage signal, when the voltage signal reaches the metal layer.
  • the first electrode 4 When the first electrode 4 is electrically connected, the first electrode 4 transmits a voltage signal to the metal layer 3 as a branch of the voltage signal; or the first electrode 4 and the metal layer 3 simultaneously receive a voltage signal, and the first electrode 4 And the metal layer 3 acts as both branches to simultaneously transmit a voltage signal.
  • the organic electroluminescent display panel may further include: a light absorbing layer 8 disposed on the metal layer 3. Due to the function of the light absorbing layer 8, as shown in FIG. The light inside the light-emitting structure is absorbed by the light-absorbing layer 8 and can no longer be emitted to the surface of the electroluminescent structure, so that the display effect of the OLED can be further improved.
  • the metal layer 3 may be disposed between each adjacent two sub-pixels, and A light absorbing layer 8 (not shown) may be provided on each of the metal layers 3.
  • the thickness of the metal layer may be set to E.g, or
  • the thickness of the metal layer may be determined according to actual conditions, and is not limited herein.
  • the metal layer may be provided as a continuous strip structure or a segmented strip structure.
  • the structure of the metal layer may be determined according to actual conditions, and is not limited herein.
  • the width of the metal layer may be set to 2 ⁇ m to 20 ⁇ m, for example, 2 ⁇ m, 6 ⁇ m, 10 ⁇ m, 14 ⁇ m, 16 ⁇ m. , 18 ⁇ m and 20 ⁇ m, etc.
  • the pixel size is 81um*81um
  • the pitch value between the pixel light-emitting areas is 30um
  • the width of the metal layer can be set to 7 ⁇ m.
  • the width of the metal layer may be determined according to actual conditions, and is not limited herein.
  • the material of the metal layer may be any one or a combination of silver, aluminum, copper, gold, platinum, and high reflectivity is selected.
  • the metal material with lower resistance can be used without limitation.
  • the thickness of the light absorbing layer may be set to E.g, or Wait.
  • the thickness of the light absorbing layer may be determined according to actual conditions, and is not limited herein.
  • the material of the light absorbing layer may be a silicon-based nitride material.
  • a material having a large extinction coefficient may be specifically selected, which is not limited herein.
  • a structure such as a thin film transistor, a gate line, and a data line is further disposed on the substrate.
  • the structure may be implemented in various manners, which is not limited herein.
  • At least one embodiment of the present disclosure further provides a method for fabricating the above-described organic electroluminescent display panel.
  • the principle of solving the problem is similar to the foregoing organic electroluminescent display panel. Therefore, the implementation of the method can be referred to the above organic The implementation of the electroluminescent display panel will not be repeated here.
  • a method for fabricating an organic electroluminescence display panel provided by an embodiment of the present disclosure, as shown in FIG. 8, includes the following steps:
  • a first electrode is formed on a substrate substrate on which a pixel defining layer pattern is formed, which can be implemented as follows. :
  • a first electrode (for example, a cathode) is formed on the base substrate on which the pixel defining layer is formed by an evaporation process.
  • the organic functional layer of the organic electroluminescence display panel for example, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron blocking layer, is a fine mask (Fine Metal Mask). , FMM) or metal mask (open mask) is formed by an evaporation process.
  • the cathode is formed by an evaporation process using a metal open mask to ensure that the cathode is connected to the metal layer to be formed.
  • step S804 a metal layer electrically connected to the first electrode is formed on the pixel spacer, and the following manner may be adopted:
  • a metal layer electrically connected to the first electrode is formed on the pixel spacer by a plating process.
  • step S804 is performed to form a metal layer electrically connected to the first electrode on the pixel separator.
  • the steps can be included:
  • step S805 forms a light absorbing layer on the metal layer, and the following manner may be adopted:
  • a light absorbing layer is formed on the metal layer by a sputtering process or a chemical vapor deposition process.
  • the following is an example in which the first electrode is used as a cathode, and the steps of fabricating the organic electroluminescence display panel are as follows:
  • Step 1 Providing a substrate.
  • the base substrate may be a transparent glass substrate or a transparent plastic substrate.
  • Step 2 forming a pixel defining layer on the substrate, the pixel defining layer having multiple and organic An aperture region corresponding to a sub-pixel of the electroluminescent display panel, and a pixel spacer surrounding the aperture region.
  • a pixel driving circuit (array) structure layer 20 is first formed on the base substrate 10, and then a pattern of the anode 30 is formed on the pixel driving circuit (array) structure layer 20; thereafter, a liner lining the anode 30 is formed.
  • a pixel defining layer 40 is formed on the base substrate 10; the pixel defining layer 40 has a plurality of opening regions 401 corresponding to sub-pixels of the organic electroluminescent display panel, and a pixel separator 402 surrounding the opening region 401.
  • Step 3 Form a cathode of the organic electroluminescence display panel on the base substrate on which the pixel defining layer is formed.
  • the organic functional layer 50 is first formed in the opening region 401 of the pixel defining layer 40 by an evaporation process using an FMM; and then on the substrate 10 on which the organic functional layer 50 is formed by an evaporation process using an open mask.
  • a cathode 60 is formed that covers the entire pixel defining layer 40.
  • the organic functional layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron blocking layer, and the like.
  • Step 4 forming a metal layer electrically connected to the cathode on the pixel separator
  • a metal layer film is formed on the pixel spacer 402 by a plating process (for example, a sputtering process), and then a metal layer 70 is formed by an etching process; the metal layer 70 is electrically connected to the cathode 60.
  • the metal layer 70 is in the form of a strip-like structure above the cathode 60 and in direct contact with the metal layer 70.
  • Step 5 Form a light absorbing layer on the metal layer.
  • a light absorbing layer 80 is formed on the metal layer 70 by a sputtering process or a chemical vapor deposition process.
  • the above organic electroluminescent display panel provided by the embodiment of the present disclosure is produced through the above steps 1 to 5.
  • At least one embodiment of the present disclosure further provides a display device, which includes the above-mentioned organic electroluminescent display panel provided by an embodiment of the present disclosure, and the display device may be: a mobile phone, a tablet computer, a television, a display, a notebook Any product or component that has a display function, such as a computer, digital photo frame, and navigator.
  • the display device may be: a mobile phone, a tablet computer, a television, a display, a notebook Any product or component that has a display function, such as a computer, digital photo frame, and navigator.
  • Other indispensable components of the display device are understood by those skilled in the art, and are not described herein, nor should they be construed as limiting the disclosure.
  • An organic electroluminescent display panel a method for fabricating the same, and a display device, comprising: a substrate substrate; a pixel defining layer and a first electrode disposed on the substrate;
  • the pixel defining layer includes at least one opening region corresponding to a sub-pixel of the organic electroluminescent display panel, and a pixel separator surrounding the opening region; the pixel separator is provided with a metal layer, the metal layer and the first layer One electrode is electrically connected.
  • the metal layer is disposed on the pixel separator, the metal layer is electrically connected to the cathode, which can reduce the resistance of the cathode, thereby reducing the voltage drop, and at the same time, improving the pixel illumination when adjacent to the pixel due to the reflection effect of the metal layer.
  • the crosstalk of the pixel illuminates, thereby improving the display effect of the OLED.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机电致发光显示面板及其制作方法、显示装置,该有机电致发光显示面板包括:衬底基板(1);设置在所述衬底基板(1)上的像素界定层(2)和第一电极(4);其中,所述像素界定层(2)包括至少一个与所述有机电致发光显示面板的亚像素对应的开口区域,以及围设所述开口区域的像素分隔体(22);所述像素分隔体(22)上设置有金属层(3),所述金属层(3)与所述第一电极(4)电性连接。该金属层(3)与第一电极(4)电性连接,能够降低第一电极(4)的电阻,从而减小电压降,同时由于金属层的反射作用,能够改善像素发光时,对相邻像素发光的串扰,进而提高显示效果。

Description

有机电致发光显示面板及其制作方法、显示装置 技术领域
本公开涉及一种有机电致发光显示面板及其制作方法、显示装置。
背景技术
有机电致发光显示器件(Organic Electroluminesecent Display,简称OLED)具有低功耗、高色饱和度、广视角、薄厚度以及能实现柔性化等优异性能,已经逐渐成为显示领域的主流。
有机发光二极管(OLED)显示技术在AMOLED手机屏中已具有比较成熟的应用,例如,图1a为采用顶发射(TE)模式的像素结构,由于顶发射模式中阴极01的厚度较薄,一般为10-30nm,从而导致其电阻较大,其方阻值例如为30-50Ω/□,当手机屏幕尺寸较大时,电压降(IR drop)的问题尤为突出,IR drop会造成不同区域的电流差异,进而在显示时出现显示不均的问题。如图1a所示,02为衬底基板,03为像素驱动电路(阵列)结构层,04为阳极,05为像素界定层,06为有机功能层。
除此之外,在AMOLED顶发射模式中,RGB像素向两侧发光,会造成无功损耗,进而影响OLED的显示品质。如图1b所示,红光的发射区域散射到蓝光或绿光的发射区域时,会造成RGB像素发光的串扰现象,也会影响OLED的显示品质。
发明内容
本公开的实施例提供一种有机电致发光显示面板及其制作方法、显示装置,有机电致发光显示面板可以减小电压降(IR drop)的问题,进而可以提高OLED的显示效果。
本公开至少一实施例提供一种有机电致发光显示面板,该有机电致发光显示面板包括:衬底基板;设置在所述衬底基板上的像素界定层和第一电极;其中,所述像素界定层包括至少一个与所述有机电致发光显示面板的亚像素对应的开口区域,以及围设所述开口区域的像素分隔体;所述像素分隔体上设置有金属层,所述金属层与所述第一电极电性连接。
在本公开至少一实施例提供的有机电致发光显示面板中,例如,所述金属层设置在所述第一电极的上方且与所述第一电极直接接触。
本公开至少一实施例提供的有机电致发光显示面板还可以包括:设置在所述金属层上的吸光层。
在本公开至少一实施例提供的有机电致发光显示面板中,例如,在每相邻两个所述亚像素之间均设置有所述金属层。
在本公开至少一实施例提供的有机电致发光显示面板中,例如,所述金属层的厚度为
Figure PCTCN2017090529-appb-000001
在本公开至少一实施例提供的有机电致发光显示面板中,例如,所述金属层为连续条状结构或分段条状结构。
在本公开至少一实施例提供的有机电致发光显示面板中,例如,所述吸光层的厚度为
Figure PCTCN2017090529-appb-000002
在本公开至少一实施例提供的有机电致发光显示面板中,例如,所述吸光层的材料为硅基氮化物。
在本公开至少一实施例提供的有机电致发光显示面板中,例如,所述第一电极为所述有机电致发光显示面板的阴极。
本公开至少一实施例还提供一种上述有机电致发光显示面板的制作方法,包括:提供衬底基板;在所述衬底基板上形成像素界定层和第一电极,其中,所述像素界定层包括至少一个与所述有机电致发光显示面板的亚像素对应的开口区域,以及围设所述开口区域的像素分隔体;在所述像素分隔体上形成与所述第一电极电性连接金属层。
在本公开至少一实施例提供的制作方法中,例如,通过蒸镀工艺在所述衬底基板上形成第一电极。
在本公开至少一实施例提供的制作方法中,例如,在所述像素分隔体上形成与所述第一电极电性连接金属层包括:通过镀膜工艺在所述像素分隔体上形成金属层。
本公开至少一实施例提供的制作方法,在所述像素分隔体上形成与所述第一电极电性连接的所述金属层后,还可以包括:通过溅射工艺或化学气相沉积工艺在所述金属层上形成吸光层。
本公开至少一实施例还提供一种显示装置,包括上述任一有机电致发光显示面板。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。
图1a为一种有机电致发光显示面板的截面结构示意图;
图1b为一种有机电致发光显示面板出现串扰现象的示意图;
图2a为本公开一实施例提供的一种有机电致发光显示面板的俯视图;
图2b为图2a中沿A-A’方向的剖面结构示意图;
图3为本公开一实施例提供的再一种有机电致发光显示面板的俯视图;
图4为本公开一实施例提供的金属层对光线进行反射的示意图;
图5为本公开一实施例提供的一种有机电致发光显示面板的截面结构示意图;
图6为本公开一实施例提供的吸光层对光线进行吸收的示意图;
图7为本公开一实施例提供的又一种有机电致发光显示面板的俯视图;
图8为本公开一实施例提供的一种有机电致发光显示面板的制作方法的流程图;
图9为本公开一实施例提供的再一种有机电致发光显示面板的制作方法流程图;以及
图10a至图10d分别为本公开一实施例提供的一种有机电致发光显示面板的制作方法在各步骤执行后的截面结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来 区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
下面结合附图,对本公开的实施例提供的有机电致发光显示面板及其制作方法、显示装置的实施方式进行详细地说明。
本公开的实施例所涉及的有机电致发光显示面板中各图案的尺寸在实际产品中通常为微米或更小量级,为了清楚起见,本公开实施例的附图中各结构的尺寸均被放大,除非另有明确说明,不代表实际尺寸与比例。
例如,本公开至少一实施例提供一种有机电致发光显示面板,如图2a和图2b所示,该有机电致发光显示面板包括:衬底基板1,设置在该衬底基板1上的像素界定层2和第一电极4(例如,阴极),该像素界定层2包括至少一个与该有机电致发光显示面板的亚像素对应的开口区域,以及围设该开口区域的像素分隔体22,该像素分隔体22上设置有金属层3,该金属层3与第一电极4电性连接。
需要说明的是,5是像素驱动电路(阵列)结构层,6是有机电致发光显示面板的第二电极(例如,阳极),7是有机电致发光显示面板的有机功能层,例如,该有机功能层包括空穴注入层、空穴传输层、发光层、电子传输层以及电子阻挡层等。
通常,有机电致发光显示面板的阴极会采用薄的、透明的金属材料制备而成。例如,铝、镁等金属。上述材料形成的阴极的电阻较大,可以通过并联金属层的方式来减小阴极的电阻。需要说明的是,通过并联金属层的方式同样可以减小阳极的电阻,下述主要以阴极与金属层电连接以减少阴极电阻为例加以说明。
在本公开的实施例提供的上述有机电致发光显示面板中,如图3所示,以单个像素为例,由于在像素分隔体上设置有金属层3,且该金属层3与第一电极4(例如,阴极)电性连接,假设金属层3的电阻为R1,阴极4的电阻为R2,相当于R1和R2并联,得到并联后的电阻R3,即R3=1/(1/R1+1/R2)<R1,因此金属层3与阴极4并联后的电阻R3相较于阴极4的电阻R2降低, 从而对电压降(IR drop)有所改善。同时,如图4所示,由于金属层3具有高反射性,亚像素发出的光通过金属层的侧边反射到外界,使得混光区减小,能够改善亚像素发光时对相邻亚像素发光的串扰,减小了无功损耗,进而提高了OLED的显示效果。
例如,在本公开的实施例提供的上述有机电致发光显示面板中,为了使金属层与阴极电性连接,如图2b所示,该金属层位于阴极的上方且与阴极直接接触,这样可以确保并联后的电阻减小,从而改善IR drop的问题,不会因为电压降太大而在显示时出现显示不均的问题。
需要说明的是,也可以将阴极设置在金属层的上方,且阴极与金属层直接接触,金属层直接设置在像素分隔体上。这样同样可以确保并联后的电阻减小,从而改善IR drop的问题,不会因为电压降太大而在显示时出现显示不均的问题。
例如,当第一电极4接受电压信号并将电压信号进行传递,且当电压信号到达和第一电极4电连接的金属层3时,金属层3作为电压信号传递的支路与第一电极4同时传递电压信号,这样相当于第一电极4和金属层3形成并联电路,降低了电信号传递过程中的电阻,或者,也可以是金属层3先接受电压信号,当电压信号到达和金属层3电连接的第一电极4时,第一电极4作为电压信号传递的支路与金属层3同时传递电压信号;再或者,第一电极4和金属层3同时接受电压信号,第一电极4和金属层3作为两条支路同时传递电压信号。
例如,如图5所示,该有机电致发光显示面板还可以包括:设置在金属层3上的吸光层8,由于吸光层8的作用,如图6所示,外界入射的部分光到电致发光结构内部的光会被吸光层8吸收,无法再出射到电致发光结构的表面,因此可以进一步地提高OLED的显示效果。
例如,为了进一步地减少RGB像素发光向两侧的无功损耗,防止RGB像素发光的串扰现象,如图7所示,在每相邻两个亚像素之间均可以设置金属层3,同时,在各金属层3上均可以设置吸光层8(图中未示出)。
例如,在本公开的实施例提供的上述有机电致发光显示面板中,为了使金属层的侧边可以有效反射相邻两个亚像素之间发射的光线,金属层的厚度可以设置为
Figure PCTCN2017090529-appb-000003
例如,
Figure PCTCN2017090529-appb-000004
或者
Figure PCTCN2017090529-appb-000005
等,对于金属层的厚度可以根据实际情况而定,在此不做限定。
例如,在本公开的实施例提供的上述有机电致发光显示面板中,为了简化制作工艺,金属层可以设置为连续条状结构或分段条状结构。金属层的结构可以根据实际情况而定,在此不做限定。
例如,在本公开的实施例提供的上述有机电致发光显示面板中,当金属层为条状结构时,金属层的宽度可以设置为2μm~20μm,例如,2μm、6μm、10μm、14μm、16μm、18μm以及20μm等。以5.0inch高清显示屏(1280*720)为例,像素大小为81um*81um,像素发光区域之间的pitch值为30um,此时金属层的宽度可以设置为7μm。对于金属层的宽度可以根据实际情况而定,在此不做限定。
例如,在本公开的实施例提供的上述有机电致发光显示面板中,金属层的材料可以为银、铝、铜、金、铂中的任意一种或者多种的组合,选择高反射率且电阻较低的金属材料即可,在此不做限定。
例如,在本公开的实施例提供的上述有机电致发光显示面板中,为了使吸光层可以有效吸收外界入射的部分光线,吸光层的厚度可以设置为
Figure PCTCN2017090529-appb-000006
例如,
Figure PCTCN2017090529-appb-000007
或者
Figure PCTCN2017090529-appb-000008
等。对于吸光层的厚度可以根据实际情况而定,在此不做限定。
例如,在本公开的实施例提供的上述有机电致发光显示面板中,吸光层的材料可以为硅基氮化物材料。对于吸光层的材料选择,具体选择消光系数较大的材料即可,在此不做限定。
例如,在本公开的实施例提供的有机电致发光显示面板中,一般还设置有诸如空穴阻挡层、阴极保护层等其他膜层结构。在衬底基板上还设置有薄膜晶体管、栅线和数据线等结构,这些结构可以有多种实现方式,在此不做限定。
例如,本公开的至少一实施例还提供一种上述有机电致发光显示面板的制作方法,该方法解决问题的原理与前述有机电致发光显示面板相似,因此该方法的实施可以参见上述有机电致发光显示面板的实施,重复之处不再赘述。
例如,本公开的实施例提供的有机电致发光显示面板的制作方法,如图8所示,包括以下步骤:
S801、提供衬底基板;
S802、在衬底基板上形成像素界定层,该像素界定层具有多个与有机电 致发光显示面板的亚像素对应的开口区域,以及围设开口区域的像素分隔体;
S803、在形成有像素界定层的衬底基板上形成有机电致发光显示面板的第一电极;
S804、在像素分隔体上形成与第一电极电性连接的金属层。
例如,在本公开至少一实施例提供的上述有机电致发光显示面板的制作方法中,在步骤S803中,在形成有像素界定层图形的衬底基板上形成第一电极,可以采用如下方式实现:
通过蒸镀工艺在形成有像素界定层的衬底基板上形成第一电极(例如,阴极)。
需要说明的是,有机电致发光显示面板的有机功能层,例如,空穴注入层、空穴传输层、发光层、电子传输层以及电子阻挡层等的图形采用精细掩膜版(Fine Metal Mask,FMM)或金属掩膜版(open mask)通过蒸镀工艺形成。阴极采用金属掩膜版(open mask)通过蒸镀工艺形成,是为了确保阴极与待形成的金属层相连接。
例如,在本公开至少一实施例提供的上述有机电致发光显示面板的制作方法中,步骤S804在像素分隔体上形成与第一电极电性连接的金属层,可以采用如下方式:
通过镀膜工艺在像素分隔体上形成与第一电极电性连接的金属层。
例如,在本公开的实施例提供的上述有机电致发光显示面板的制作方法中,如图9所示,执行步骤S804在像素分隔体上形成与第一电极电性连接的金属层之后,还可以包括以下步骤:
S805、在金属层上形成吸光层。
例如,在本公开的实施例提供的上述有机电致发光显示面板的制作方法中,步骤S805在金属层上形成吸光层,可以采用如下方式:
通过溅射工艺或化学气相沉积工艺在金属层上形成吸光层。
例如,以下以第一电极为阴极为例加以说明,制作有机电致发光显示面板的步骤如下:
步骤一、提供衬底基板。
例如,该衬底基板可以为透明的玻璃基板或透明的塑料基板。
步骤二、在衬底基板上形成像素界定层,该像素界定层具有多个与有机 电致发光显示面板的亚像素对应的开口区域,以及围设开口区域的像素分隔体。
如图10a所示,首先在衬底基板10上形成像素驱动电路(阵列)结构层20,然后在像素驱动电路(阵列)结构层20上形成阳极30的图形;之后在形成有阳极30的衬底基板10上形成像素界定层40;该像素界定层40具有多个与有机电致发光显示面板的亚像素对应的开口区域401,以及围设开口区域401的像素分隔体402。
步骤三、在形成有像素界定层的衬底基板上形成有机电致发光显示面板的阴极。
如图10b所示,首先采用FMM通过蒸镀工艺在像素界定层40的开口区域401内形成有机功能层50;然后采用open mask通过蒸镀工艺在形成有有机功能层50的衬底基板10上形成阴极60,该阴极60覆盖整个像素界定层40。
例如,该有机功能层包括空穴注入层、空穴传输层、发光层、电子传输层以及电子阻挡层等。
步骤四、在像素分隔体上形成与阴极电性连接的金属层;
如图10c所示,通过镀膜工艺(例如,溅射工艺)在像素分隔体402上形成金属层薄膜,然后通过刻蚀工艺形成金属层70;金属层70与阴极60电性连接,此时,金属层70的图形为条状结构,位于阴极60的上方且与金属层70直接接触。
步骤五、在金属层上形成吸光层。
如图10d所示,通过溅射工艺或化学气相沉积工艺在金属层70上形成吸光层80。
经过上述步骤一至步骤五制作出了本公开的实施例提供的上述有机电致发光显示面板。
本公开至少一实施例还提供了一种显示装置,该显示装置包括本公开的实施例提供的上述有机电致发光显示面板,该显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的,在此不做赘述,也不应作为对本公开的限制。该显示装置的实施可以参见上述有机电致发光显示面板的实施 例,重复之处不再赘述。
本公开实施例提供的一种有机电致发光显示面板及其制作方法、显示装置,该有机电致发光显示面板包括:衬底基板;设置在衬底基板上的像素界定层和第一电极;该像素界定层包括至少一个与有机电致发光显示面板的亚像素对应的开口区域,以及围设该开口区域的像素分隔体;该像素分隔体上设置有金属层,该金属层与所述第一电极电性连接。由于在像素分隔体上设置有金属层,该金属层与阴极电性连接,能够降低阴极的电阻,从而可以减小电压降,同时由于金属层的反射作用,能够改善像素发光时,对相邻像素发光的串扰,进而提高的OLED的显示效果。
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,本公开的保护范围应以所述权利要求的保护范围为准。
本申请要求于2016年12月23日递交的中国专利申请第201611208527.9号的优先权,在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (14)

  1. 一种有机电致发光显示面板,包括:
    衬底基板;
    设置在所述衬底基板上的像素界定层和第一电极;
    其中,所述像素界定层包括至少一个与所述有机电致发光显示面板的亚像素对应的开口区域,以及围设所述开口区域的像素分隔体;
    所述像素分隔体上设置有金属层,所述金属层与所述第一电极电性连接。
  2. 如权利要求1所述的有机电致发光显示面板,其中,所述金属层设置在所述第一电极的上方且与所述第一电极直接接触。
  3. 如权利要求2所述的有机电致发光显示面板,还包括:设置在所述金属层上的吸光层。
  4. 如权利要求1-3中任一项所述的有机电致发光显示面板,其中,在每相邻两个所述亚像素之间均设置有所述金属层。
  5. 如权利要求4所述的有机电致发光显示面板,其中,所述金属层的厚度为
    Figure PCTCN2017090529-appb-100001
  6. 如权利要求5所述的有机电致发光显示面板,其中,所述金属层为连续条状结构或分段条状结构。
  7. 如权利要求3所述的有机电致发光显示面板,其中,所述吸光层的厚度为
    Figure PCTCN2017090529-appb-100002
  8. 如权利要求7所述的有机电致发光显示面板,其中,所述吸光层的材料为硅基氮化物。
  9. 如权利要求1-8中任一项所述的有机电致发光显示面板,其中,所述第一电极为所述有机电致发光显示面板的阴极。
  10. 一种有机电致发光显示面板的制作方法,包括:
    提供衬底基板;
    在所述衬底基板上形成像素界定层和第一电极,其中,所述像素界定层包括至少一个与所述有机电致发光显示面板的亚像素对应的开口区域,以及围设所述开口区域的像素分隔体;
    在所述像素分隔体上形成与所述第一电极电性连接的金属层。
  11. 如权利要求10所述的制作方法,其中,通过蒸镀工艺在所述衬底基板上形成第一电极。
  12. 如权利要求10所述的制作方法,其中,在所述像素分隔体上形成与所述第一电极电性连接的金属层,包括:
    通过镀膜工艺在所述像素分隔体上形成金属层。
  13. 如权利要求12所述的制作方法,其中,在所述像素分隔体上形成与所述第一电极电性连接的所述金属层后,还包括:
    通过溅射工艺或化学气相沉积工艺在所述金属层上形成吸光层。
  14. 一种显示装置,包括如权利要求1-9中任一项所述的有机电致发光显示面板。
PCT/CN2017/090529 2016-12-23 2017-06-28 有机电致发光显示面板及其制作方法、显示装置 Ceased WO2018113236A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/742,350 US20190088726A1 (en) 2016-12-23 2017-06-28 Organic light-emitting diode (oled) display panel and manufacturing method thereof, and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201611208527.9 2016-12-23
CN201611208527.9A CN106531770A (zh) 2016-12-23 2016-12-23 一种有机电致发光显示面板、其制作方法及显示装置

Publications (1)

Publication Number Publication Date
WO2018113236A1 true WO2018113236A1 (zh) 2018-06-28

Family

ID=58338646

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/090529 Ceased WO2018113236A1 (zh) 2016-12-23 2017-06-28 有机电致发光显示面板及其制作方法、显示装置

Country Status (3)

Country Link
US (1) US20190088726A1 (zh)
CN (1) CN106531770A (zh)
WO (1) WO2018113236A1 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11448807B2 (en) 2016-02-18 2022-09-20 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate, fine metal mask set and manufacturing method thereof
CN110137213B (zh) 2018-02-09 2025-03-25 京东方科技集团股份有限公司 像素排列结构及其显示方法、显示基板
US11747531B2 (en) 2016-02-18 2023-09-05 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate, fine metal mask set and manufacturing method thereof
WO2021016946A1 (zh) 2019-07-31 2021-02-04 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板、显示装置
US11233096B2 (en) 2016-02-18 2022-01-25 Boe Technology Group Co., Ltd. Pixel arrangement structure and driving method thereof, display substrate and display device
CN110137215B (zh) 2018-02-09 2025-01-14 京东方科技集团股份有限公司 像素排列结构、显示基板和显示装置
CN106531770A (zh) * 2016-12-23 2017-03-22 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置
US10707437B2 (en) 2017-04-28 2020-07-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Top-emitting OLED device, method of manufacturing the same, and display panel
CN106992267A (zh) * 2017-04-28 2017-07-28 深圳市华星光电技术有限公司 一种顶发射oled器件及制备方法、显示面板
JP6823735B2 (ja) * 2017-05-17 2021-02-03 アップル インコーポレイテッドApple Inc. 横方向の漏れを低減した有機発光ダイオードディスプレイ
CN107331690A (zh) * 2017-08-18 2017-11-07 深圳市华星光电半导体显示技术有限公司 有机电致发光显示基板及有机电致发光显示装置
CN107808897A (zh) * 2017-11-30 2018-03-16 京东方科技集团股份有限公司 一种有机发光二极管显示基板及其制作方法、显示装置
KR102491882B1 (ko) * 2017-12-20 2023-01-27 삼성디스플레이 주식회사 유기발광표시장치 및 이의 제조방법
US11574960B2 (en) 2018-02-09 2023-02-07 Boe Technology Group Co., Ltd. Pixel arrangement structure, display substrate, display device and mask plate group
CN110880523A (zh) * 2018-09-05 2020-03-13 上海和辉光电有限公司 显示面板、显示装置及显示面板的制备方法
CN109411524B (zh) * 2018-12-04 2021-08-24 武汉华星光电半导体显示技术有限公司 显示模组及显示装置
CN109638051A (zh) * 2018-12-14 2019-04-16 武汉华星光电半导体显示技术有限公司 一种oled面板的制作方法及oled面板
CN109817825A (zh) * 2019-01-22 2019-05-28 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法、显示装置
CN110112194A (zh) * 2019-04-30 2019-08-09 深圳市华星光电半导体显示技术有限公司 有机发光显示面板及其制备方法
CN110197847B (zh) * 2019-07-25 2019-11-01 武汉华星光电半导体显示技术有限公司 有机发光器件和有机发光显示装置
CN110416431A (zh) * 2019-07-26 2019-11-05 云谷(固安)科技有限公司 一种显示面板及显示装置
CN112673476B (zh) * 2019-07-31 2025-12-30 京东方科技集团股份有限公司 显示基板和显示装置
CN110752243B (zh) * 2019-10-31 2023-01-10 武汉天马微电子有限公司 一种显示面板、其制作方法及显示装置
CN110931653B (zh) * 2019-11-27 2022-07-12 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN111162108A (zh) * 2020-01-02 2020-05-15 京东方科技集团股份有限公司 一种显示面板、其制作方法及显示装置
CN111200000B (zh) * 2020-01-09 2022-05-03 云谷(固安)科技有限公司 显示面板及显示装置
CN113439334B (zh) * 2020-01-23 2024-03-26 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN111554719B (zh) * 2020-05-15 2023-04-18 京东方科技集团股份有限公司 显示面板、制作方法及显示设备
CN112563437A (zh) * 2020-12-24 2021-03-26 湖畔光电科技(江苏)有限公司 一种顶发射oled阴极结构及制备方法
CN114023909B (zh) * 2021-11-03 2024-03-05 昆山工研院新型平板显示技术中心有限公司 显示面板及电子设备
WO2023206015A1 (zh) * 2022-04-25 2023-11-02 京东方科技集团股份有限公司 显示基板及显示装置
US20250107393A1 (en) * 2022-09-28 2025-03-27 Boe Technology Group Co., Ltd. Display Panel and Manufacturing Method Therefor, and Display Device
CN116887645B (zh) * 2023-06-30 2024-10-01 惠科股份有限公司 显示面板制作方法、显示面板与显示终端

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090066236A1 (en) * 2007-09-11 2009-03-12 Un-Cheol Sung Organic light-emitting display device and method of manufacturing the same
CN103943655A (zh) * 2014-03-11 2014-07-23 京东方科技集团股份有限公司 一种oled阵列基板及其制备方法、显示器
CN104465711A (zh) * 2014-12-30 2015-03-25 京东方科技集团股份有限公司 Amoled阵列基板及其制造方法、显示装置
CN106531770A (zh) * 2016-12-23 2017-03-22 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4252297B2 (ja) * 2002-12-12 2009-04-08 株式会社日立製作所 発光素子およびこの発光素子を用いた表示装置
US9666658B2 (en) * 2015-01-05 2017-05-30 Samsung Display Co., Ltd. Organic light emitting diode display and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090066236A1 (en) * 2007-09-11 2009-03-12 Un-Cheol Sung Organic light-emitting display device and method of manufacturing the same
CN103943655A (zh) * 2014-03-11 2014-07-23 京东方科技集团股份有限公司 一种oled阵列基板及其制备方法、显示器
CN104465711A (zh) * 2014-12-30 2015-03-25 京东方科技集团股份有限公司 Amoled阵列基板及其制造方法、显示装置
CN106531770A (zh) * 2016-12-23 2017-03-22 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置

Also Published As

Publication number Publication date
US20190088726A1 (en) 2019-03-21
CN106531770A (zh) 2017-03-22

Similar Documents

Publication Publication Date Title
WO2018113236A1 (zh) 有机电致发光显示面板及其制作方法、显示装置
US10886492B2 (en) Array substrate and display panel comprising fracture opening for blocking carrier transportation between adjacent sub-pixels
CN110034132B (zh) 一种阵列基板、显示面板及显示装置
CN107579102B (zh) 显示面板及显示装置
CN105633297B (zh) 透视有机发光显示装置及其制造方法
CN104362257B (zh) 一种顶发射oled器件及其制作方法、显示设备
US11575111B2 (en) Optical film group, display assembly and display device
CN109659334B (zh) 显示装置和电子设备
CN110416275B (zh) 显示面板、显示装置及其驱动方法
CN111029381A (zh) 有机发光显示面板及有机发光显示装置
WO2020207135A1 (zh) 显示面板及显示装置
CN211743193U (zh) 一种阵列基板及显示装置
US20160035807A1 (en) Oled pixel structure and oled display device
US20190044077A1 (en) Substrate for an organic light-emitting device, manufacturing method thereof and display device
JP7103560B2 (ja) 表示基板、表示装置及び表示基板の製造方法
KR20110021090A (ko) 유기전계 발광소자 제조 용 쉐도우 마스크
US10109684B2 (en) Pixel element structure, array structure and display device
US9960211B2 (en) Pixel element structure, array structure and display device
US9899455B2 (en) Organic light emitting diode display
WO2019196336A1 (zh) Oled面板
US20210233981A1 (en) Display Backplane, Manufacturing Method thereof, and Display Device
CN106711179A (zh) Amoled透明显示器及其制作方法
CN106848097A (zh) 一种有机发光显示面板、显示装置及其制作方法
US20250275456A1 (en) Display baseplate, manufacturing method for display baseplate, and display device
WO2023231802A1 (zh) 触控结构、触控显示面板以及显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17883491

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17883491

Country of ref document: EP

Kind code of ref document: A1