WO2018210285A1 - Circuit convertisseur de type t et circuit convertisseur triphasé correspondant - Google Patents

Circuit convertisseur de type t et circuit convertisseur triphasé correspondant Download PDF

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Publication number
WO2018210285A1
WO2018210285A1 PCT/CN2018/087213 CN2018087213W WO2018210285A1 WO 2018210285 A1 WO2018210285 A1 WO 2018210285A1 CN 2018087213 W CN2018087213 W CN 2018087213W WO 2018210285 A1 WO2018210285 A1 WO 2018210285A1
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WIPO (PCT)
Prior art keywords
diode
controllable switching
switching device
conversion circuit
igbt
Prior art date
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PCT/CN2018/087213
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English (en)
Chinese (zh)
Inventor
陈成辉
陈四雄
易龙强
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Xiamen Kehua Hengsheng Co Ltd
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Xiamen Kehua Hengsheng Co Ltd
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Priority claimed from CN201720562597.8U external-priority patent/CN206992982U/zh
Priority claimed from CN201710361225.3A external-priority patent/CN108964507B/zh
Application filed by Xiamen Kehua Hengsheng Co Ltd filed Critical Xiamen Kehua Hengsheng Co Ltd
Publication of WO2018210285A1 publication Critical patent/WO2018210285A1/fr
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to the field of electrical energy conversion, and in particular to a T-type conversion circuit and a corresponding three-phase conversion circuit.
  • the conversion circuit of the T-shaped layout generally comprises two vertically arranged controllable switching devices and two laterally arranged controllable switching devices; two vertically arranged controllable switching devices are connected in series, one end is connected to the positive bus bar and the other end is connected Negative busbar; the connection point between two vertically arranged controllable switching devices is used as the input and output end of the conversion circuit; two laterally set controllable switching devices are generally disposed on the intermediate bridge arm, and one end of the intermediate bridge arm is connected to Input and output, the other end of the intermediate bridge is connected to the neutral line.
  • the two laterally disposed controllable switching devices are generally connected in three ways on the intermediate bridge arms, as shown in Figures 1, 2 and 3.
  • Fig. 1 shows a case where two laterally disposed controllable switching devices are connected in reverse series with each other and connected to each other with a drain or a collector.
  • Figure 2 shows the case where two laterally disposed controllable switching devices are connected in series in anti-phase with each other connected to the source or emitter.
  • Fig. 3 shows the case where two laterally arranged controllable switching devices are connected in series with one diode and then connected in parallel to the intermediate bridge arm.
  • the controllable switching devices each include an IGBT tube and a freewheeling diode connected in anti-parallel with the IGBT tube.
  • the T-type three-level conversion circuit in the prior art has the advantages of a single IGBT tube blocking voltage halving, small harmonics, low loss, high efficiency and the like.
  • the power consumption of each IGBT tube can be divided into on-state power consumption and on-off power consumption, wherein the on-off power consumption can separately separate the phase power consumption and the power consumption in the shutdown phase.
  • the on-state power consumption is dominant; but when the operating frequency is high, the on-off power consumption is increased to the main power consumption, where the power consumption in the turn-on phase is greater than the power consumption in the turn-off phase. Therefore, in the case of a high operating frequency, a "soft switching" is required.
  • the so-called “soft switching” means that the controllable switching device can realize zero voltage switching (ZVS), zero current switching (ZCS) or zero voltage zero current.
  • ZVS zero voltage switching
  • ZCS zero current switching
  • ZVZXCS zero voltage zero current
  • Power device (controllable switching device) has large loss; and the temperature of the power device rises, not only the operating frequency cannot be improved, but also the current and voltage capacity of the power device cannot reach the rated index, so that the power device cannot operate under the rated condition. , thereby restricting the application of the three-level topology;
  • the circuit topology is very sensitive to the parasitic parameters of the power device; when the soft switch cannot be realized, there may be a problem of the pass-through of the upper and lower arms, and since the soft switch cannot be realized, the power device also has a turn-on delay time (dead time). In the case of high frequency, in order to eliminate the influence of dead time on the performance of the inverter, the corrective measures taken make the design of the whole system complicated;
  • the power device will generate noise pollution during high-frequency switching, which will result in higher requirements for the input and output filters of the conversion circuit.
  • the object of the present invention is to solve the problems in the prior art, and provide a T-type conversion circuit and a corresponding three-phase conversion circuit, so that the power device can realize soft switching operation, thereby reducing power consumption of the power device and the diode device, and Solve the problems in the prior art.
  • a T-type conversion circuit comprising two vertically arranged controllable switching devices, two laterally disposed controllable switching devices, an inductor, a first diode, a second diode, a third diode, and a a four diode, a first capacitor and a second capacitor; the two vertically arranged controllable switching devices are connected in series, one end is connected to the positive bus bar, and the other end is connected to the negative bus bar; the two vertically arranged The connection point between the control switching devices is used as an input and output terminal; the two laterally disposed controllable switching devices are located on the intermediate bridge arm; one end of the intermediate bridge arm is connected to the input and output ends, and the other end of the intermediate bridge arm is connected to One end of the inductor; the other end of the inductor is connected to the neutral line; among the two laterally set controllable switching devices, the controllable switching device that meets the first condition or the second condition is defined as the second controllable switching device, which conforms to the The third condition or
  • the second controllable switching device is connected in reverse series with the third controllable switching device, the drain or collector of the second controllable switching device and the third controllable switching device The drain or collector is connected.
  • the second controllable switching device is connected in reverse series with the third controllable switching device, and the source or emitter of the second controllable switching device and the third controllable switch The source or emitter of the device is connected.
  • the intermediate bridge arm further includes a fifth diode and a sixth diode; a source or an emitter of the third controllable switching device and the second controllable switch a drain or a collector of the device is connected to the input and output terminals; a source or an emitter of the second controllable switching device is connected to an anode of the fifth diode; and a drain of the third controllable switching device Or the collector is connected to the cathode of the sixth diode; the cathode of the fifth diode and the anode of the sixth diode are connected to the inductor.
  • any one of the two vertically disposed controllable switching devices adopts an IGBT unit or a MOS unit, and when the IGBT unit is used, the IGBT unit includes an IGBT tube and a diode connected in anti-parallel with the IGBT tube.
  • the MOS unit may be a MOS transistor with a body diode or a MOS transistor without an body diode and an anti-parallel diode.
  • any one of the two laterally disposed controllable switching devices adopts an IGBT unit or a MOS unit, and when the IGBT unit is used, the IGBT unit includes an IGBT tube and a diode connected in anti-parallel with the IGBT tube;
  • the MOS unit may be a MOS transistor with a body diode or a MOS transistor without an body diode and an anti-parallel diode.
  • a three-phase conversion circuit comprising a first conversion circuit, a second conversion circuit, and a third conversion circuit; wherein the first conversion circuit, the second conversion circuit, and the third conversion circuit are both as claimed in claims 1 to 6
  • a T-type conversion circuit according to the invention a center line of the first conversion circuit, a center line of the second conversion circuit, and a center line of the third conversion circuit are connected to each other.
  • all controllable switching devices and diode devices can implement soft switching, that is, zero voltage switching (ZVS), zero current switching (ZCS) or zero voltage zero current switching (ZVZCS). Or switch between on and off with limited dv/dt and di/dt.
  • ZVS zero voltage switching
  • ZCS zero current switching
  • ZVZCS zero voltage zero current switching
  • controllable switching device switches on and off with limited dv/dt and di/dt, so the system EMI electromagnetic interference is much more optimized than the unimplemented soft switch;
  • the conversion device can work twice as much as the operating frequency of the conventional conversion device, so the output filter parameter requirements of the conversion device are reduced, and the size can be doubled. Small, which is beneficial to further reduce material costs, reduce product size, and increase product power density;
  • FIG. 1 is a circuit diagram of a first case in the prior art
  • FIG. 2 is a schematic circuit diagram of a second case in the prior art
  • FIG. 3 is a schematic circuit diagram of a third case in the prior art.
  • Embodiment 4 is a schematic circuit diagram of Embodiment 1 of a T-type conversion circuit according to the present invention.
  • FIG. 5 is a schematic circuit diagram of a second embodiment of a T-type conversion circuit according to the present invention.
  • FIG. 6 is a schematic circuit diagram of a third embodiment of a T-type conversion circuit according to the present invention.
  • FIG. 7 is a schematic diagram of the operation of the first embodiment of the T-type conversion circuit of the present invention before DC/AC conversion, when the inverter output voltage is a positive half cycle, before the vertical pipe is commutated to the horizontal pipe;
  • FIG. 8 is a schematic diagram of the first stage of the T-type conversion circuit of the present invention performing DC/AC conversion, and the inverter output voltage is a positive half cycle, and the vertical pipe is commutated to the horizontal pipe;
  • FIG. 9 is a schematic diagram showing the second stage operation of the first embodiment of the T-type conversion circuit of the present invention for DC/AC conversion, when the inverter output voltage is a positive half cycle;
  • FIG. 10 is a schematic diagram showing the operation of the first embodiment of the T-type conversion circuit of the present invention after performing DC/AC conversion, and the inverter output voltage is a positive half cycle before the horizontal pipe is commutated to the vertical pipe;
  • FIG. 11 is a schematic diagram showing the operation of the first stage of the T-type conversion circuit of the present invention in which the DC/AC conversion is performed, and the inverter output voltage is a positive half cycle, and the horizontal pipe is commutated to the vertical pipe;
  • FIG. 12 is a schematic diagram showing the operation of the fourth stage of the T-type conversion circuit of the present invention for DC/AC conversion, when the inverter output voltage is a positive half cycle, and the horizontal pipe is commutated to the vertical pipe;
  • FIG. 13 is a schematic diagram showing the operation of the first embodiment of the T-type conversion circuit of the present invention before AC/DC conversion, when the AC input voltage is positive half cycle, before the vertical pipe is commutated to the horizontal pipe;
  • FIG. 14 is a schematic diagram showing the first stage of operation of the AC-DC conversion of the T-type conversion circuit of the present invention, in which the AC input voltage is a positive half cycle, and the vertical pipe is commutated to the horizontal pipe;
  • 15 is a schematic diagram showing the second stage of the AC-DC conversion of the T-type conversion circuit of the present invention, in which the AC input voltage is a positive half cycle, and the vertical pipe is commutated to the horizontal pipe;
  • 16 is a schematic diagram showing the operation of the first embodiment of the T-type conversion circuit of the present invention before AC/DC conversion, when the AC input voltage is positive half cycle, before the horizontal pipe is commutated to the vertical pipe;
  • 17 is a schematic diagram of the operation of the first embodiment of the T-type conversion circuit of the present invention for AC/DC conversion, when the AC input voltage is a positive half cycle;
  • Figure 18 is a circuit diagram showing an embodiment of a three-phase conversion circuit in the present invention.
  • Fig. 4 is a circuit diagram showing the first embodiment of the T-type conversion circuit of the present invention.
  • the first embodiment of the T-type conversion circuit includes two vertically arranged controllable switching devices, two laterally disposed controllable switching devices, an inductor L, a first diode D1, and a second two.
  • the two vertically arranged controllable switching devices are respectively a first controllable switching device and a fourth controllable switching device, wherein the first controllable switching device adopts an IGBT unit, including the first IGBT tube Q1 and the first anti-parallel connection thereof A freewheeling diode Dq1; the fourth controllable switching device adopts an IGBT unit, and includes a fourth IGBT tube Q4 and a fourth freewheeling diode Dq4 connected in anti-parallel thereto.
  • the first IGBT tube Q1 and the fourth IGBT tube Q4 are connected in series, the collector of the first IGBT tube Q1 is connected to the positive bus, the emitter of the fourth IGBT tube Q4 is connected to the negative bus, the emitter of the first IGBT tube Q1 and the fourth IGBT The collector of the tube Q4 is connected, and the connection point serves as an input and output terminal.
  • Two laterally controllable switching devices on the intermediate bridge arm are respectively a second controllable switching device and a third controllable switching device, wherein the second controllable switching device adopts an IGBT unit, including a second IGBT tube Q2 and The second freewheeling diode Dq2 connected in anti-parallel; the third controllable switching device adopts an IGBT unit, and includes a third IGBT tube Q3 and a third freewheeling diode Dq3 connected in anti-parallel thereto.
  • the second IGBT transistor Q2 and the third IGBT transistor Q3 are connected in reverse series to the intermediate bridge arm.
  • the emitter of the third IGBT transistor Q3 is connected to the input and output terminals; the collector of the third IGBT transistor Q3 is connected to the collector of the second IGBT transistor Q2; the emitter of the second IGBT transistor Q2 is connected to the inductor L; One end is connected to the center line.
  • the first diode D1 and the second diode D2 are connected in series, the cathode of the first diode D1 is connected to the positive bus, and the anode of the second diode D2 is connected to the connection point of the inductor L and the intermediate bridge;
  • One end of a capacitor C1 is connected to a connection point of the first diode D1 and the second diode D2, and the other end of the first capacitor C1 is connected to the input and output ends.
  • the third diode D3 and the fourth diode D4 are connected in series, the anode of the fourth diode D4 is connected to the negative bus, the cathode of the third diode D3 is connected to the emitter of the second IGBT tube Q2;
  • One end of the capacitor C2 is connected to the connection point of the third diode D3 and the fourth diode D4, and the other end of the second capacitor C2 is connected to the collector of the second IGBT tube.
  • the positive pole of the third polarity capacitor C3 is connected to the positive bus, the negative pole is connected to the neutral line; the positive pole of the fourth polarity capacitor C4 is connected to the neutral line, and the negative pole is connected to the negative bus.
  • controllable switching device can also adopt a MOS unit.
  • MOS unit can be a MOS tube with a body diode or a MOS tube and an anti-parallel diode without a body diode.
  • the T-type conversion circuit of this embodiment can realize that in the inverter and rectification process, all controllable switching devices and diode devices can realize soft switching, that is, zero voltage switching (ZVS), zero current switching (ZCS) or zero voltage. Zero current switch (ZVZCS), or on/off switching with limited dv/dt and di/dt. in particular:
  • the inverter output voltage is a positive half cycle and the inverter output voltage is a negative half cycle two half cycles, and each half cycle is further divided into a vertical pipe to a horizontal pipe.
  • Figure 7 shows the state before the standpipe is commutated to the cross tube.
  • the first IGBT pipe Q1 and the third IGBT pipe Q3 are in an on state
  • the second IGBT pipe Q2 and the fourth IGBT pipe Q4 are in an off state.
  • the current flows to the load Z through the first IGBT tube Q1, and although the third IGBT tube Q3 is turned on, no current flows.
  • the first IGBT transistor Q1 is turned on, the second capacitor C2 is charged to the Vdc state. At this time, no current flows through the inductor L, and the voltage of the first capacitor C1 is zero.
  • Figure 8 shows the operational state of the first stage in the process of commutating the riser to the cross tube.
  • the third IGBT tube remains in the on state
  • the fourth IGBT tube Q4 remains in the off state
  • the first IGBT tube Q1 is switched from the on state to the off state
  • the second IGBT tube Q2 is switched from the off state to the off state.
  • the second capacitor C2 is discharged to the load Z through the fourth diode D4 and the third IGBT transistor Q3.
  • the second capacitor C2 is also charged to the inductor L through the second IGBT transistor Q2 and the fourth diode D4. Since the voltage on the second capacitor C2 is gradually discharged to zero, the current of the load Z at the moment when the first IGBT transistor Q1 is turned off is supplied from the second capacitor C2. Therefore, the first IGBT tube Q1 is turned off in a zero voltage manner, and the turn-off loss is very small, which is a typical soft switching process. Due to the presence of the inductance L, the second IGBT tube Q2 is switched from the off state to the on state, and the current is also established in the form of di/dt, which is also a soft switching process.
  • Figure 9 shows the operating state of the second stage during the commutation of the riser to the cross tube.
  • the fourth diode D4 is turned off, and the current of the inductor L is again zero.
  • the fourth freewheeling diode Dq4 starts to be continuously turned on.
  • the load Z output level is clamped at the -Vdc/2 level.
  • the inductor L starts to store energy through the second freewheeling diode Dq2 and the third IGBT transistor Q3, and the current of the inductor L increases linearly from zero, while the current through the fourth freewheeling diode Dq4 decreases in proportion.
  • the current through the fourth freewheeling diode Dq4 is reduced to zero, the commutation process is completed.
  • the fourth freewheeling diode Dq4 is turned off, and the load current is carried by the second freewheeling diode Dq2 and the third IGBT transistor Q3.
  • the current changes occurring through the second freewheeling diode Dq2, the second IGBT tube Q2, the fourth freewheeling diode Dq4, and the third IGBT tube Q3 are all finite current change rates. Di/dt. So in the process, they all implement soft switching.
  • the freewheeling process of the fourth diode D4 is also turned on and off with a limited current change rate di/dt, so that the conduction loss of the fourth diode D4 can be significantly reduced.
  • Fig. 10 shows the state after the inverter tube is commutated to the horizontal tube when the inverter output voltage is in the positive half cycle, or the state before the cross tube is commutated to the vertical tube.
  • the first IGBT pipe Q1 and the fourth IGBT pipe Q4 are in an off state, and the second IGBT pipe Q2 and the third IGBT pipe Q3 are in an on state.
  • the first capacitor C1 and the second capacitor C2 are in a zero voltage discharge state, and the current passing through the inductor L is equal to the current passing through the load Z.
  • Figure 11 shows the operational state of the third stage during the commutation of the cross tube to the riser.
  • the third IGBT tube Q3 is kept in an on state
  • the fourth IGBT tube Q4 is kept in an off state
  • the first IGBT tube Q1 is turned from the off state to the on state
  • the second IGBT tube Q2 is turned on.
  • the status goes to the cutoff state.
  • the upper half bus voltage passes through the first IGBT transistor Q1, the second freewheeling diode Dq2, and the third IGBT transistor Q3 is opposite to the inductor L.
  • the first IGBT transistor Q1 When the first IGBT transistor Q1 is turned on, since the load current is taken up by the inductor L, the first IGBT transistor Q1 is turned on to be a zero current conduction, and the current of the first IGBT transistor Q1 during the conduction is limited di/ The dt mode is established, so the first IGBT tube Q1 is in a soft switching mode of operation.
  • the second IGBT transistor Q2 has no current flowing during the transition from the on state to the off state, and also belongs to the soft switching mode of operation.
  • Figure 12 shows the operational state of the fourth stage in the process of commutating the cross tube to the standpipe.
  • the load Z output level is clamped at the Vdc/2 level due to the zero voltage of the second capacitor C2. Therefore, as shown in FIG. 16, the upper half bus voltage charges the second capacitor C2 through the first IGBT transistor Q1, the third freewheeling diode Dq3, the third diode D3, and the inductor L. Due to the presence of the inductance L, when the second capacitor C2 is charged to a voltage of Vdc, the third freewheeling diode Dq3 and the third diode D3 are reversely turned off, the charging and commutation processes are completed, and the current is returned to the first IGBT tube Q1.
  • the state of flowing to the load Z that is, the state of FIG.
  • the third freewheeling diode Dq3 and the third diode D3 are turned on and off with a finite current change rate di/dt, therefore, the third freewheeling diode Dq3 and the third two
  • the switching loss during the turn-on and turn-off of the transistor D3 is very low, and belongs to the soft switching mode of operation.
  • the commutation process when the inverter output voltage is negative half cycle is similar to the commutation process when the inverter output voltage is positive half cycle.
  • the commutation of the vertical pipe to the horizontal pipe or the commutation of the horizontal pipe to the vertical pipe also requires two experiences. Stage, no longer detailed here.
  • the AC input voltage is a positive half cycle and the AC input voltage is a negative half cycle for two half cycles, and each half cycle is further divided into a vertical tube to a horizontal tube commutation and a horizontal tube to a vertical tube.
  • Figure 13 shows the state before the riser is commutated to the cross tube.
  • the first IGBT pipe Q1 and the third IGBT pipe Q3 are in an on state, and the second IGBT pipe Q2 and the fourth IGBT pipe Q4 are in an off state.
  • the rectified current flows from the first freewheeling diode Dq1 to the bus.
  • the third IGBT transistor Q3 is turned on but no current passes. Since the third IGBT transistor is turned on, the first capacitor C1 is in a zero voltage discharge state. Since the first IGBT transistor Q1 is turned on, the second capacitor C2 is charged to the Vdc state, at which time the current of the inductor L is zero.
  • Figure 14 shows the operational state of the first stage of the commutation process of the riser to the cross tube.
  • the third IGBT tube Q3 is kept in an on state
  • the fourth IGBT tube Q4 is kept in an off state.
  • the first IGBT transistor Q1 is switched from the on state to the off state
  • the second IGBT transistor Q2 is turned from the off state to the on state.
  • the first freewheeling diode Dq1 since the first freewheeling diode Dq1 is in an on state, the first freewheeling diode Dq1, the third freewheeling diode Dq3, the second IGBT transistor Q2, and the inductor L are established with the input source Z. Loop.
  • the current through the intermediate bridge arm increases linearly from zero; at the same time, the current through the first freewheeling diode Dq1 decreases linearly until the current through the inductor L increases to the rectified current, at this time the first continuation The flow diode Dq1 is turned off.
  • the process of turning the first IGBT transistor Q1 from on to off belongs to zero voltage and zero current shutdown. Due to the presence of the inductance L, the current of the second IGBT transistor Q2 increases linearly from off to on, so the conduction process of the second IGBT transistor Q2 is zero current conduction. Both are typical soft switching processes.
  • Figure 15 shows the working state of the second stage of the process of the lack of money from the riser to the cross tube.
  • the first freewheeling diode Dq1 is turned off, and the second capacitor C2 is discharged through the second IGBT transistor Q2, the fourth diode D4, and the inductor L. Discharge to zero.
  • the second phase is completed.
  • Fig. 16 shows the state after the end of the commutation process of the riser to the cross tube, that is, the state before the cross tube is commutated to the riser.
  • the second capacitor C2 is discharged, and the rectified current is carried by the third freewheeling diode Dq3, the second IGBT tube Q2, and the inductor L.
  • the first IGBT tube Q1 and the fourth IGBT tube Q4 are in an off state, and the second IGBT tube Q2 and the third IGBT tube Q3 are in an on state.
  • the third IGBT transistor Q3 is in an on state, no current flows.
  • the first capacitor C1 and the second capacitor C2 are both in a zero voltage discharge state.
  • the current through the inductor L is the rectified current.
  • Figure 17 shows the operational state of the flow of the cross tube to the riser.
  • the third IGBT tube Q3 is kept in an on state
  • the fourth IGBT tube Q4 is kept in an off state
  • the first IGBT tube Q1 is turned from the off state to the on state
  • the second IGBT tube Q2 is Go from the on state to the off state.
  • the rectified current is transferred from passing through the second IGBT transistor Q2 to passing through the second capacitor C2 due to the presence of the second capacitor C2.
  • the voltage of the second IGBT transistor Q2 increases linearly from zero, and is zero voltage and zero current shutdown.
  • the current flowing through the first freewheeling diode Dq1 to the busbar gradually increases, due to the first The presence of the freewheeling diode Dq1, the first IGBT transistor Q1 has no current passing, so the conduction process of the first IGBT transistor Q1 belongs to zero current and zero voltage conduction. It can be seen from the above analysis that in the process of commutating the cross tube to the vertical tube, the on and off processes of the first IGBT tube Q1 and the second IGBT tube Q2 are both soft switching processes.
  • the commutation process when the AC input voltage is negative half cycle is similar to the commutation process when the AC input voltage is positive half cycle, and the process of commutating the vertical pipe to the horizontal pipe or the horizontal pipe to the vertical pipe is similar. Detailed.
  • Fig. 5 is a circuit diagram showing the second embodiment of the T-type conversion circuit of the present invention.
  • the second embodiment of the T-type conversion circuit includes two vertically arranged controllable switching devices, two laterally disposed controllable switching devices, an inductor L, a first diode D1, and a second two.
  • the two vertically arranged controllable switching devices are respectively a first controllable switching device and a fourth controllable switching device, wherein the first controllable switching device adopts an IGBT unit, including the first IGBT tube Q1 and the first anti-parallel connection thereof A freewheeling diode Dq1; the fourth controllable switching device adopts an IGBT unit, and includes a fourth IGBT tube Q4 and a fourth freewheeling diode Dq4 connected in anti-parallel thereto.
  • the first IGBT tube Q1 and the fourth IGBT tube Q4 are connected in series, the collector of the first IGBT tube Q1 is connected to the positive bus, the emitter of the fourth IGBT tube Q4 is connected to the negative bus, the emitter of the first IGBT tube Q1 and the fourth IGBT The collector of the tube Q4 is connected, and the connection point serves as an input and output terminal.
  • Two laterally controllable switching devices on the intermediate bridge arm are respectively a second controllable switching device and a third controllable switching device, wherein the second controllable switching device adopts an IGBT unit, including a second IGBT tube Q2 and The second freewheeling diode Dq2 connected in anti-parallel; the third controllable switching device adopts an IGBT unit, and includes a third IGBT tube Q3 and a third freewheeling diode Dq3 connected in anti-parallel thereto.
  • the second IGBT transistor Q2 and the third IGBT transistor Q3 are connected in reverse series to the intermediate bridge arm.
  • the collector of the second IGBT transistor Q2 is connected to the input and output terminals; the emitter of the second IGBT transistor Q2 is connected to the emitter of the third IGBT transistor Q3; the collector of the third IGBT transistor is connected to the inductor L; the other end of the inductor L Connect to the center line.
  • the first diode D1 and the second diode D2 are connected in series, the cathode of the first diode D1 is connected to the positive bus, and the anode of the second diode D2 is connected to the connection point of the inductor L and the intermediate bridge;
  • One end of a capacitor C1 is connected to a connection point of the first diode D1 and the second diode D2, and the other end of the first capacitor C1 is connected to the input and output ends.
  • the third diode D3 and the fourth diode D4 are connected in series, the anode of the fourth diode D4 is connected to the negative bus, the cathode of the third diode D3 is connected to the emitter of the second IGBT tube Q2;
  • One end of the capacitor C2 is connected to the connection point of the third diode D3 and the fourth diode D4, and the other end of the second capacitor C2 is connected to the collector of the second IGBT tube.
  • the positive pole of the third polarity capacitor C3 is connected to the positive bus, the negative pole is connected to the neutral line; the positive pole of the fourth polarity capacitor C4 is connected to the neutral line, and the negative pole is connected to the negative bus.
  • controllable switching device can also adopt a MOS unit.
  • MOS unit can be a MOS tube with a body diode or a MOS tube and an anti-parallel diode without a body diode.
  • the second embodiment is similar to the first embodiment in that the controllable switching device and the diode realize the soft switching in the commutation process, and will not be described in detail herein.
  • Fig. 6 is a circuit diagram showing the third embodiment of the T-type conversion circuit of the present invention.
  • the second embodiment of the T-type conversion circuit includes two vertically arranged controllable switching devices, two laterally disposed controllable switching devices, an inductor L, a first diode D1, and a second two.
  • the two vertically arranged controllable switching devices are respectively a first controllable switching device and a fourth controllable switching device, wherein the first controllable switching device adopts an IGBT unit, including the first IGBT tube Q1 and the first anti-parallel connection thereof A freewheeling diode Dq1; the fourth controllable switching device adopts an IGBT unit, and includes a fourth IGBT tube Q4 and a fourth freewheeling diode Dq4 connected in anti-parallel thereto.
  • the first IGBT tube Q1 and the fourth IGBT tube Q4 are connected in series, the collector of the first IGBT tube Q1 is connected to the positive bus, the emitter of the fourth IGBT tube Q4 is connected to the negative bus, the emitter of the first IGBT tube Q1 and the fourth IGBT The collector of the tube Q4 is connected, and the connection point serves as an input and output terminal.
  • the intermediate bridge arm includes two laterally disposed controllable switching devices, a fifth diode and a sixth diode.
  • the two laterally controllable switching devices are respectively a second controllable switching device and a third controllable switching device, wherein the second controllable switching device adopts an IGBT unit, including a second IGBT tube Q2 and a second connected in anti-parallel thereto The freewheeling diode Dq2; the third controllable switching device adopts an IGBT unit, and includes a third IGBT tube Q3 and a third freewheeling diode Dq3 connected in anti-parallel thereto.
  • the collector of the second IGBT transistor Q2 and the emitter of the third IGBT transistor Q3 are connected to the input and output terminals; the emitter of the second IGBT transistor Q2 is connected to the anode of the fifth diode D5, and the collector of the third IGBT transistor Q3 Connected to the cathode of the sixth diode D6, the cathode of the fifth diode D5 and the anode of the sixth diode D6 are connected to one end of the inductor L; the other end of the inductor L is connected to the center line.
  • the first diode D1 and the second diode D2 are connected in series, the cathode of the first diode D1 is connected to the positive bus, and the anode of the second diode D2 is connected to the connection point of the inductor L and the intermediate bridge;
  • One end of a capacitor C1 is connected to a connection point of the first diode D1 and the second diode D2, and the other end of the first capacitor C1 is connected to the input and output ends.
  • the third diode D3 and the fourth diode D4 are connected in series, the anode of the fourth diode D4 is connected to the negative bus, the cathode of the third diode D3 is connected to the emitter of the second IGBT tube Q2;
  • One end of the capacitor C2 is connected to the connection point of the third diode D3 and the fourth diode D4, and the other end of the second capacitor C2 is connected to the collector of the second IGBT tube.
  • the positive pole of the third polarity capacitor C3 is connected to the positive bus, the negative pole is connected to the neutral line; the positive pole of the fourth polarity capacitor C4 is connected to the neutral line, and the negative pole is connected to the negative bus.
  • controllable switching device can also adopt a MOS unit.
  • MOS unit can be a MOS tube with a body diode or a MOS tube and an anti-parallel diode without a body diode.
  • the third embodiment is similar to the first embodiment in that the controllable switching device and the diode realize the soft switching in the commutation process, and will not be described in detail herein.
  • all controllable switching devices and diode devices can implement soft switching, that is, zero voltage switching (ZVS), zero current switching (ZCS) or zero. Voltage zero current switch (ZVZCS), or on/off switching with limited dv/dt and di/dt.
  • ZVS zero voltage switching
  • ZCS zero current switching
  • ZVZCS Voltage zero current switch
  • the on-off loss of the controllable switching device is greatly reduced, the working efficiency of the conversion circuit is improved, the power device is not easily broken by the second breakdown, and the dead time is eliminated.
  • the controllable switching device switches on and off with limited dv/dt and di/dt, so the system EMI electromagnetic interference is much more optimized than the unimplemented soft switch.
  • the conversion device can be multiplied by the operating frequency of the conventional conversion device, so that the output filter parameter requirements of the conversion device are reduced, and the size can be reduced by a factor of two. This will help to further reduce material costs, reduce product size, and increase product power density.
  • Fig. 18 is a circuit diagram showing an embodiment of a three-phase conversion circuit in the present invention.
  • the three-phase conversion circuit in the embodiment includes a first conversion circuit, a second conversion circuit, and a third conversion circuit; the first conversion circuit, the second conversion circuit, and the third conversion circuit all adopt the T-type conversion described above.
  • the T-type conversion circuit described in Embodiment 1 of the circuit; the center line of the first conversion circuit, the center line of the second conversion circuit, and the center line of the third conversion circuit are connected to each other.
  • the first conversion circuit, the second conversion circuit, and the third conversion circuit may also adopt the T-type conversion circuit described in the second embodiment or the third embodiment of the above-described T-type conversion circuit, and the effect is the same.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Rectifiers (AREA)

Abstract

La présente invention concerne un circuit convertisseur de type T et un circuit convertisseur triphasé correspondant. Dans le circuit convertisseur de type T, un inducteur, quatre diodes et deux condensateurs sont ajoutés à un circuit convertisseur de type T de l'état de la technique, ce qui permet à la fois à un dispositif de commutation pouvant être commandé et à un dispositif de diode d'effectuer une commutation en douceur, réduisant la consommation d'énergie d'un dispositif d'alimentation et du dispositif de diode. Le circuit convertisseur triphasé correspondant peut également permettre au dispositif de commutation pouvant être commandé et au dispositif à diode d'effectuer une commutation en douceur, réduisant la consommation d'énergie du dispositif d'alimentation et du dispositif de diode.
PCT/CN2018/087213 2017-05-19 2018-05-17 Circuit convertisseur de type t et circuit convertisseur triphasé correspondant Ceased WO2018210285A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201720562597.8U CN206992982U (zh) 2017-05-19 2017-05-19 一种t型变换电路和相应的三相变换电路
CN201720562597.8 2017-05-19
CN201710361225.3 2017-05-19
CN201710361225.3A CN108964507B (zh) 2017-05-19 2017-05-19 一种t型变换电路和相应的三相变换电路

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WO2018210285A1 true WO2018210285A1 (fr) 2018-11-22

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US11404972B2 (en) 2019-11-25 2022-08-02 Carrier Corporation Power module and converter with asymmetrical semiconductor rating arrangement
US12549112B2 (en) 2021-04-21 2026-02-10 Huawei Digital Power Technologies Co., Ltd. Power converter

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CN102804570A (zh) * 2010-02-18 2012-11-28 康斯坦茨大学 具有卸载网络的3级脉冲逆变器
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11404972B2 (en) 2019-11-25 2022-08-02 Carrier Corporation Power module and converter with asymmetrical semiconductor rating arrangement
US12549112B2 (en) 2021-04-21 2026-02-10 Huawei Digital Power Technologies Co., Ltd. Power converter

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