WO2019013629A3 - Extrémité avant de capteur - Google Patents

Extrémité avant de capteur Download PDF

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Publication number
WO2019013629A3
WO2019013629A3 PCT/NL2018/050468 NL2018050468W WO2019013629A3 WO 2019013629 A3 WO2019013629 A3 WO 2019013629A3 NL 2018050468 W NL2018050468 W NL 2018050468W WO 2019013629 A3 WO2019013629 A3 WO 2019013629A3
Authority
WO
WIPO (PCT)
Prior art keywords
apd
load impedance
sensor
anode
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/NL2018/050468
Other languages
English (en)
Other versions
WO2019013629A2 (fr
Inventor
Dennis VAN WEEREN
Arnoud Marc JONGSMA
Joachim Ulrich SEIBERT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fugro Technology BV
Original Assignee
Fugro Technology BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL2019224A external-priority patent/NL2019224B1/en
Application filed by Fugro Technology BV filed Critical Fugro Technology BV
Priority to CA3069646A priority Critical patent/CA3069646C/fr
Priority to EP18749591.6A priority patent/EP3652788B1/fr
Priority to AU2018301162A priority patent/AU2018301162B2/en
Priority to US16/630,365 priority patent/US10998983B2/en
Publication of WO2019013629A2 publication Critical patent/WO2019013629A2/fr
Publication of WO2019013629A3 publication Critical patent/WO2019013629A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
    • H04B10/114—Indoor or close-range type systems
    • H04B10/116—Visible light communication
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Amplifiers (AREA)
  • Measurement Of Radiation (AREA)

Abstract

L'invention concerne un circuit de capteur (10), comprenant un capteur photomultiplicateur au silicium, SiPM, (20), une source de tension (32), un convertisseur courant-tension (24), et un circuit de polarisation de limitation (34). Le capteur SiPM (20) comporte des éléments de photodiode à avalanche, APD (30), connectés en parallèle entre une cathode (K) et une anode (A). La source de tension (32) est conçue pour appliquer une tension de polarisation inversée (Vb) au niveau du capteur SiPM, de telle sorte que chaque élément APD fonctionne en mode Geiger polarisé en inverse, et les éléments APD fonctionnent en mode d'intégration. Le circuit de polarisation (34) est connecté entre la source de tension (32) et l'anode, et est conçu pour limiter les courants à travers les éléments APD, et pour présenter une impédance de charge CA pour un courant alternatif dans une plage de fréquences de fonctionnement prédéfinie (fo) générée par les éléments APD au niveau de l'anode (A) ainsi qu'une impédance de charge CC, de telle sorte que ladite impédance de charge CA est inférieure à ladite impédance de charge CC.
PCT/NL2018/050468 2017-07-11 2018-07-11 Extrémité avant de capteur Ceased WO2019013629A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA3069646A CA3069646C (fr) 2017-07-11 2018-07-11 Extremite avant de capteur
EP18749591.6A EP3652788B1 (fr) 2017-07-11 2018-07-11 Extrémité avant de capteur
AU2018301162A AU2018301162B2 (en) 2017-07-11 2018-07-11 Sensor front end
US16/630,365 US10998983B2 (en) 2017-07-11 2018-07-11 Front end circuit for a non-linear sensor comprising a current to voltage converter and a limiting bias circuit respectively connected to the common cathode and the common anode of an array of avalanche photodiode elements

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL2019224 2017-07-11
NL2019224A NL2019224B1 (en) 2017-07-11 2017-07-11 Underwater Wireless Optical Communication Unit and System
NL2021279 2018-07-10
NL2021279A NL2021279B1 (en) 2017-07-11 2018-07-10 Sensor Front End

Publications (2)

Publication Number Publication Date
WO2019013629A2 WO2019013629A2 (fr) 2019-01-17
WO2019013629A3 true WO2019013629A3 (fr) 2019-04-11

Family

ID=63080448

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2018/050468 Ceased WO2019013629A2 (fr) 2017-07-11 2018-07-11 Extrémité avant de capteur

Country Status (1)

Country Link
WO (1) WO2019013629A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2019224B1 (en) 2017-07-11 2019-01-25 Fugro Tech Bv Underwater Wireless Optical Communication Unit and System
CN109799721B (zh) * 2019-01-31 2021-12-14 海信（山东）空调有限公司 一种家用电器的控制电路、控制方法及家用电器
EP4066021B1 (fr) 2019-11-27 2025-09-03 Thermo Fisher Scientific Messtechnik GmbH Generateur de polarisation connecte au sipm
CN114739433B (zh) * 2022-04-15 2023-12-26 北京京东方光电科技有限公司 一种光电传感器信号读取电路及光电传感器装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6654215B2 (en) * 2001-08-10 2003-11-25 The Boeing Company Photodetector circuit with avalanche photodiode
US20050205759A1 (en) * 2004-03-17 2005-09-22 Nortel Networks Limited Dynamic control of photodiode bias voltage
US8395127B1 (en) * 2005-04-22 2013-03-12 Koninklijke Philips Electronics N.V. Digital silicon photomultiplier for TOF PET
US20130248720A1 (en) * 2012-03-26 2013-09-26 Industry-University Cooperation Foundation Sogang University Digital photomultiplier detector cell
US20170030769A1 (en) * 2015-07-27 2017-02-02 Sick Ag Light Receiver with Avalanche Photo Diodes in a Geiger Mode
JP2017041782A (ja) * 2015-08-20 2017-02-23 ランプサーブ株式会社 受光装置および可視光通信システム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014119300A1 (de) 2014-12-19 2016-06-23 Leica Microsystems Cms Gmbh Verfahren zum Erhöhen des dynamischen Bereichs eines Silizium-Photomultipliers (SiPM)

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6654215B2 (en) * 2001-08-10 2003-11-25 The Boeing Company Photodetector circuit with avalanche photodiode
US20050205759A1 (en) * 2004-03-17 2005-09-22 Nortel Networks Limited Dynamic control of photodiode bias voltage
US8395127B1 (en) * 2005-04-22 2013-03-12 Koninklijke Philips Electronics N.V. Digital silicon photomultiplier for TOF PET
US20130248720A1 (en) * 2012-03-26 2013-09-26 Industry-University Cooperation Foundation Sogang University Digital photomultiplier detector cell
US20170030769A1 (en) * 2015-07-27 2017-02-02 Sick Ag Light Receiver with Avalanche Photo Diodes in a Geiger Mode
JP2017041782A (ja) * 2015-08-20 2017-02-23 ランプサーブ株式会社 受光装置および可視光通信システム

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANONYMOUS: "Si APD, MPPC", 28 August 2014 (2014-08-28), XP055469058, Retrieved from the Internet <URL:http://www.hamamatsu.com/resources/pdf/ssd/e03_handbook_si_apd_mppc.pdf> [retrieved on 20180420] *
DONATI SILVANO ET AL: "Single-Photon Detectors: From Traditional PMT to Solid-State SPAD-Based Technology", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 20, no. 6, 1 November 2014 (2014-11-01), pages 1 - 8, XP011558789, ISSN: 1077-260X, [retrieved on 20140911], DOI: 10.1109/JSTQE.2014.2350836 *
GIL A ET AL: "Programmable power supply system for SiPM bias", NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2011 IEEE, IEEE, 23 October 2011 (2011-10-23), pages 787 - 790, XP032121560, ISSN: 1082-3654, ISBN: 978-1-4673-0118-3, DOI: 10.1109/NSSMIC.2011.6154298 *

Also Published As

Publication number Publication date
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