WO2019037166A1 - 柔性显示面板的制作方法及柔性显示面板 - Google Patents

柔性显示面板的制作方法及柔性显示面板 Download PDF

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WO2019037166A1
WO2019037166A1 PCT/CN2017/101971 CN2017101971W WO2019037166A1 WO 2019037166 A1 WO2019037166 A1 WO 2019037166A1 CN 2017101971 W CN2017101971 W CN 2017101971W WO 2019037166 A1 WO2019037166 A1 WO 2019037166A1
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layer
substrate
display panel
photoresist
flexible display
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English (en)
French (fr)
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史文
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to JP2020506163A priority Critical patent/JP2020529047A/ja
Priority to KR1020207007949A priority patent/KR102315759B1/ko
Priority to EP17922187.4A priority patent/EP3675169A4/en
Priority to US15/574,831 priority patent/US10333086B2/en
Publication of WO2019037166A1 publication Critical patent/WO2019037166A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a flexible display panel and a flexible display panel.
  • LCD liquid crystal display
  • OLED organic light emitting diode
  • the liquid crystal display panel comprises a color filter (CF) substrate, a thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate), and a liquid crystal layer (Liquid Crystal) filled between the two substrates. Since the CF substrate and the TFT substrate are both made of rigid glass, the liquid crystal display panel in the form of a flat plate cannot be bent.
  • CF color filter
  • TFT Array Substrate Thin Film Transistor Array Substrate
  • Liquid Crystal liquid crystal layer
  • the OLED display panel is a flexible display panel.
  • the flexible display panel is made of a flexible material and can be displayed in any state of bending deformation.
  • Flexible display panels such as OLEDs have the advantages of light weight, small size, thinness, portability, high and low temperature resistance, impact resistance, shock resistance, wider working environment, curling, and more artistic beauty. It has become a hot spot in the research of universities and research institutions at home and abroad.
  • the flexible display panel of the prior art generally includes a flexible substrate, a TFT array disposed on the surface of the flexible substrate on one side of the flexible substrate, a light emitting element, and a driving circuit for driving the TFT array, and the driving circuit of the driving TFT array further includes scanning Line and so on.
  • the driving circuit including the scanning line is also bent at the surface of the flexible substrate, which causes stress defects and affects the normal operation of the TFT and the light-emitting element.
  • An object of the present invention is to provide a method for fabricating a flexible display panel, which can effectively reduce stress defects generated when a flexible display panel is bent, and improve stability of the flexible display panel.
  • Another object of the present invention is to provide a flexible display panel in which the scan lines generate less stress defects when the flexible display panel is bent, so that the stability of the flexible display panel is more stable. high.
  • the present invention first provides a method for fabricating a flexible display panel, comprising the following steps:
  • Step S1 providing a flexible substrate, and depositing a photoresist layer on the flexible substrate;
  • Step S2 performing patterning processing on the photoresist layer to form a plurality of mutually spaced photoresist regions, and forming via holes between adjacent two photoresist regions;
  • Step S3 the flexible substrate substrate is grooved with the photoresist region as a mask, and a plurality of mutually parallel substrate grooves are formed at corresponding positions of the through holes;
  • Step S4 depositing a metal thin film on the photoresist region and the flexible substrate, forming a metal layer covering the photoresist region, and a plurality of metal patterns respectively embedded in the plurality of mutually parallel substrate recesses;
  • Each metal pattern includes a scan line and a plurality of gates connected to the scan line;
  • Step S5 peeling off the photoresist region to remove the metal layer on the photoresist region and the photoresist region;
  • Step S6 forming a plurality of TFTs arranged in an array on the flexible substrate and the metal patterns in the recesses of the embedded substrate, and depositing OLED light-emitting elements on the plurality of TFTs arranged in an array .
  • the angle between the side of the through hole and the lower surface of the photoresist region is an obtuse angle, and the angle between the upper surface of the photoresist region and the upper surface of the photoresist region is an acute angle.
  • the cross section of the through groove is an isosceles trapezoid, and the lower base of the isosceles trapezoid is larger than the upper base.
  • the substrate recess has a depth of 300-3000 nm.
  • the substrate recess has a rectangular cross section.
  • the thickness of the metal pattern coincides with the depth of the substrate recess.
  • the step S6 includes:
  • anode is connected to a drain of the TFT through a via hole penetrating the interlayer insulating layer and the flat layer;
  • An organic light-emitting layer and a cathode are sequentially deposited in a region defined by the pixel isolation layer, and the anode, the organic light-emitting layer, and the cathode constitute an OLED light-emitting element.
  • the invention also provides a flexible display panel comprising:
  • a flexible substrate having a plurality of substrate grooves parallel to each other;
  • each metal pattern comprising a scan line and a plurality of gates connected to the scan line;
  • an OLED light-emitting element provided on the plurality of TFTs arranged in an array.
  • the substrate recess has a depth of 300-3000 nm and a rectangular cross section.
  • the thickness of the metal pattern coincides with the depth of the substrate recess.
  • the invention also provides a method for manufacturing a flexible display panel, comprising the following steps:
  • Step S1 providing a flexible substrate, and depositing a photoresist layer on the flexible substrate;
  • Step S2 performing patterning processing on the photoresist layer to form a plurality of mutually spaced photoresist regions, and forming via holes between adjacent two photoresist regions;
  • Step S3 using the photoresist region as a mask, performing a trenching process on the flexible substrate substrate, and forming a plurality of mutually parallel substrate recesses at corresponding positions of the through holes;
  • Step S4 depositing a metal thin film on the photoresist region and the flexible substrate, forming a metal layer covering the photoresist region, and a plurality of metal patterns respectively embedded in the plurality of mutually parallel substrate recesses;
  • Each metal pattern includes a scan line and a plurality of gates connected to the scan line;
  • Step S5 peeling off the photoresist region to remove the metal layer on the photoresist region and the photoresist region;
  • Step S6 forming a plurality of TFTs arranged in an array on the flexible substrate and the metal patterns in the recesses of the embedded substrate, and depositing OLED light-emitting elements on the plurality of TFTs arranged in an array ;
  • angle between the side of the through hole and the lower surface of the photoresist region is an obtuse angle, and the angle between the upper surface of the photoresist region and the upper surface of the photoresist region is an acute angle;
  • cross section of the through hole is an isosceles trapezoid, and the lower base of the isosceles trapezoid is larger than the upper base;
  • the depth of the substrate groove is 300-3000 nm
  • the thickness of the metal pattern is consistent with the depth of the substrate recess.
  • a method for fabricating a flexible display panel is characterized in that a photoresist layer is patterned to obtain a plurality of mutually spaced photoresist regions, and via holes are formed between adjacent two photoresist regions.
  • the method makes the scan line and the gate embedded in the flexible substrate, and can effectively reduce the scan line in the flexible display panel Stress defects generated when bending occurs, improving the stability of the flexible display panel.
  • the present invention provides a flexible display panel in which a metal pattern in which a scan line and a gate are located is embedded in a substrate recess of a flexible substrate, which can cause less stress defects in the scan line when the flexible display panel is bent. Helps improve the stability of flexible display panels.
  • FIG. 1 is a flow chart of a method of fabricating a flexible display panel of the present invention
  • step S3 is a schematic diagram of step S3 of the method for fabricating a flexible display panel of the present invention.
  • FIG. 5 is a schematic diagram of step S4 of the method for fabricating a flexible display panel of the present invention.
  • FIG. 6 is a schematic plan view of a metal pattern produced in step S4 of the method for fabricating a flexible display panel of the present invention.
  • step S5 is a schematic diagram of step S5 of the method for fabricating a flexible display panel of the present invention.
  • FIG 8 is a schematic view showing a step S6 of the method for fabricating a flexible display panel of the present invention and a schematic cross-sectional view of the flexible display panel of the present invention.
  • the present invention firstly provides a method for fabricating a flexible display panel, comprising the following steps:
  • Step S1 as shown in FIG. 2, a flexible substrate 1 is provided, and a photoresist layer 2 is deposited on the flexible substrate 1.
  • the material of the flexible substrate 1 is preferably polyimide (PI) or polyethylene terephthalate (PET).
  • Step S2 by performing patterning treatment by exposing and developing the photoresist layer 2, a plurality of mutually spaced photoresist regions 20 are formed, and via holes are formed between adjacent two photoresist regions 20. twenty one.
  • the angle between the side of the through hole 21 and the lower surface of the photoresist region 20 is excellent.
  • An obtuse angle greater than 90° is selected, and an angle b to the upper surface of the photoresist region 20 is preferably a sharp acute angle.
  • the through hole 21 has an isosceles trapezoidal cross section, and the lower base of the isosceles trapezoid is larger than the upper bottom, that is, the side of the isosceles trapezoid is inclined downward from the upper end thereof toward the inside of the material of the photoresist region 20.
  • Step S3 the flexible substrate substrate 1 is grooved by etching using the photoresist region 20 as a mask, and a plurality of parallel positions are formed at corresponding positions of the through holes 21.
  • the depth of the substrate recess 11 is preferably 300-3000 nm, ensuring that the depth of the substrate recess 11 is smaller than the thickness of the flexible substrate 1. Further, the substrate recess 11 has a rectangular cross section.
  • Step S4 as shown in FIG. 5, a metal film is directly deposited on the photoresist region 20 and the flexible substrate substrate 1, because the angle a between the side of the through hole 21 and the lower surface of the photoresist region 20 is greater than 90°.
  • An obtuse angle, and an angle b with the upper surface of the photoresist region 20 is a sharp acute angle, the through hole 21 can effectively block the metal film, form a metal layer 31 covering the photoresist region 20, and respectively embed the plurality of A plurality of metal patterns 32 in the substrate recess 11 which are parallel to each other and have the same pattern as the substrate recess 11.
  • the thickness of the metal pattern 32 coincides with the depth of the substrate recess 11.
  • each metal pattern 32 includes a scan line 321 and a plurality of gate electrodes 322 connected to the scan line 321 .
  • Step S5 as shown in FIG. 7, the photoresist region 20 is peeled off, and the metal layer 31 covering the photoresist region 20 is removed, leaving the plurality of mutually parallel substrate recesses 11 and The plurality of metal patterns 32 of the same pattern of the substrate grooves 11 are formed.
  • Step S6 as shown in FIG. 8, a plurality of TFTs T arranged in an array are formed on the flexible substrate substrate 1 and the metal patterns 32 in the respective embedded substrate recesses 11, and are arranged in the array.
  • the OLED light-emitting element D is deposited on a plurality of TFTs T of the cloth, and finally packaged.
  • step S6 includes:
  • a metal thin film is deposited and patterned to form a source 531 and a drain 532 respectively contacting the two sides of the semiconductor active layer 52; the gate 322, the semiconductor active layer 52, the source 531, and the drain 532 constitutes a TFT T;
  • the interlayer insulating layer 54, the flat layer 55, and the anode 57 are sequentially deposited; the anode 57 is connected to the drain 532 of the TFT T through the via V of the interlayer insulating layer 54 and the flat layer 55;
  • An organic light-emitting layer 58 and a cathode 59 are sequentially deposited in a region defined by the pixel isolation layer 56, and the anode 57, the organic light-emitting layer 58, and the cathode 59 constitute an OLED light-emitting element D.
  • the above method is such that the metal pattern 32 where the scan line 321 and the gate 322 are located is embedded in the substrate recess 11 of the flexible substrate 1, which is equivalent to a composite film in which a metal pattern 32 and a flexible substrate 2 are formed, that is,
  • the scan line 321 and the gate 322 are integrated with the flexible substrate 1 to facilitate the dispersion of the stress generated on the scan line 321 when the display panel is bent, thereby effectively reducing the stress generated when the flexible display panel is bent by the scan line 321 . Defects improve the stability of the flexible display panel.
  • the present invention also provides a flexible display panel produced by the above method.
  • the flexible display panel of the present invention includes:
  • a flexible substrate substrate 1 having a plurality of substrate grooves 11 parallel to each other;
  • each of the metal patterns 32 embedded in the plurality of mutually parallel substrate recesses 11, each of the metal patterns 32 includes a scan line 321 and a plurality of gates 322 connected to the scan line 321;
  • a gate insulating layer 51 covering the flexible substrate substrate 1 and each of the metal patterns 32;
  • the anode 57 is disposed on the flat layer 55; the anode 57 is connected to the drain 532 through the via hole V of the flat layer 55 through the interlayer insulating layer 54;
  • an organic light-emitting layer 58 and a cathode 59 which are disposed in this order from the bottom to the top in the region defined by the pixel isolation layer 56.
  • the gate electrode 322, the semiconductor active layer 52, the source electrode 531, and the drain electrode 532 constitute a TFT T; the anode 57, the organic light-emitting layer 58, and the cathode 59 constitute an OLED light-emitting element D.
  • the substrate recess 11 has a depth of 300-3000 nm, a rectangular cross section, and a thickness of the metal pattern 32 coincides with a depth of the substrate recess 11.
  • the flexible display panel of the present invention has the metal pattern of the scan line 321 and the gate 322 32 is embedded in the substrate recess 11 of the flexible substrate 1, corresponding to a composite film in which a metal pattern 3 and a flexible substrate 2 are formed, that is, the scanning line 321 and the gate 322 and the flexible substrate 1 become
  • the integration is advantageous for dispersing the stress generated on the scanning line 321 when the display panel is bent, so that the stress defects generated when the flexible display panel is bent by the scanning line 321 can be effectively reduced, and the stability of the flexible display panel is improved.
  • the photoresist layer is patterned to obtain a plurality of mutually spaced photoresist regions, and through holes are formed between adjacent two photoresist regions;
  • the photoresist substrate is trenched as a mask, and a plurality of mutually parallel substrate recesses are formed at corresponding positions of the via holes; and then the photoresist film is removed after the metal film is deposited.
  • a metal layer wherein a plurality of metal patterns respectively embedded in the plurality of mutually parallel substrate recesses are obtained, each metal pattern including a scan line and a plurality of gate electrodes; and then a plurality of TFTs arranged in an array are fabricated And OLED light-emitting elements.
  • the method allows the scan line and the gate to be embedded in the flexible substrate, which can effectively reduce stress defects generated when the flexible display panel is bent, and improve the stability of the flexible display panel.
  • the metal pattern in which the scan line and the gate are located is embedded in the substrate recess of the flexible substrate, so that the stress defects generated when the scan line is bent in the flexible display panel are less, which helps to improve The stability of the flexible display panel.

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种柔性显示面板的制作方法及柔性显示面板。本方法先对光阻层(2)进行图案化处理得到多个相互间隔的光阻区域(20)，相邻两个光阻区域(20)之间形成通孔(21)；再以光阻区域(20)作为掩膜对柔性衬底基板(1)进行挖槽处理，在通孔(21)的对应的位置形成多个相互平行的衬底凹槽(11)；接着沉积金属薄膜后去除光阻区域(20)及其上的金属层(31)，得到分别嵌入多个相互平行的衬底凹槽(11)内的多个金属图案(32)，每一金属图案(32)包括扫描线(321)、及多个栅极(322)；然后制作出呈阵列式排布的多个TFT、及OLED发光元件。本方法使得扫描线(321)及栅极(322)嵌入在柔性衬底基板(1)内，能够有效减少扫描线(321)在柔性显示面板发生弯折时产生的应力缺陷，提高柔性显示面板的稳定性。

Description

柔性显示面板的制作方法及柔性显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种柔性显示面板的制作方法及柔性显示面板。
背景技术
在显示技术领域，液晶显示面板(Liquid Crystal Display，LCD)与有机发光二极管显示面板(Organic Light Emitting Diode，OLED)等平板显示装置已经逐步取代CRT显示器。
进一步地，液晶显示面板由一彩色滤光片(Color Filter，CF)基板、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)、以及一填充于两基板间的液晶层(Liquid Crystal Layer)所构成，且CF基板与TFT基板均采用刚性的玻璃作为衬底，所以平板形式的液晶显示面板不可弯折。
OLED显示面板则是一种柔性显示面板。柔性显示面板是采用柔性材料制成，能够在任意弯曲变形的状态下进行显示。由于OLED等柔性显示面板具有重量轻、体积小、薄型化、便携、耐高低温、耐冲击、抗震能力更强、适应的工作环境更广、可卷曲，外形更有艺术美感等优点，近年来成为了国内外高校和研究机构研究的热点。
现有技术中的柔性显示面板通常包括柔性基板、于柔性基板一侧设在柔性基板表面上的TFT阵列、发光元件、以及驱动TFT阵列的驱动电路，所述驱动TFT阵列的驱动电路又包括扫描线等。当现有的柔性显示面板发生弯折时，包括扫描线在内的驱动电路也会随之在柔性基板表面发生弯折，产生应力缺陷，影响TFT和发光元件的正常工作。
因此，现有技术仍有待改善和发展。
发明内容
本发明的目的在于提供一种柔性显示面板的制作方法，能够有效减少扫描线在柔性显示面板发生弯折时产生的应力缺陷，提高柔性显示面板的稳定性。
本发明的另一目的在于提供一种柔性显示面板，其中的扫描线在柔性显示面板发生弯折时产生的应力缺陷较少，使得柔性显示面板的稳定性较 高。
为实现上述目的，本发明首先提供一种柔性显示面板的制作方法，包括如下步骤：
步骤S1、提供一柔性衬底基板，并在所述柔性衬底基板上沉积光阻层；
步骤S2、对所述光阻层进行图案化处理，形成多个相互间隔的光阻区域，相邻两个光阻区域之间形成通孔；
步骤S3、以所述光阻区域作为掩膜对所述柔性衬底基板进行挖槽处理，在所述通孔的对应的位置形成多个相互平行的衬底凹槽；
步骤S4、在光阻区域及柔性衬底基板上沉积金属薄膜，形成覆盖所述光阻区域的金属层、及分别嵌入所述多个相互平行的衬底凹槽内的多个金属图案；
每一金属图案包括扫描线、及与所述扫描线连接的多个栅极；
步骤S5、剥离所述光阻区域以去除光阻区域及光阻区域上的金属层；
步骤S6、在柔性衬底基板与各个嵌入衬底凹槽内的金属图案上制作出呈阵列式排布的多个TFT，并在所述呈阵列式排布的多个TFT上沉积OLED发光元件。
所述通孔的侧边与光阻区域下表面的夹角为钝角，与光阻区域上表面的夹角为锐角。
所述通槽的截面呈等腰梯形，且等腰梯形的下底大于上底。
所述衬底凹槽的深度为300-3000nm。
所述衬底凹槽的截面呈矩形。
所述金属图案的厚度与所述衬底凹槽的深度一致。
所述步骤S6包括：
在所述柔性衬底基板与金属图案上沉积栅极绝缘层；
在所述栅极绝缘层上沉积半导体有源层；
沉积金属薄膜并做图案化处理，形成分别接触所述半导体有源层两侧的源极、与漏极；所述栅极、半导体有源层、源极、与漏极构成TFT；
依次沉积层间绝缘层、平坦层、及阳极；所述阳极通过贯穿层间绝缘层与平坦层的过孔连接TFT的漏极；
在所述平坦层、及阳极上形成图案化的像素隔离层，所述像素隔离层覆盖部分所述平坦层、及阳极；
在所述像素隔离层界定出的区域内依次沉积有机发光层、及阴极，所述阳极、有机发光层、与阴极构成OLED发光元件。
本发明还提供一种柔性显示面板，包括：
柔性衬底基板，所述柔性衬底基板具有多个相互平行的衬底凹槽；
分别嵌入所述多个相互平行的衬底凹槽内的多个金属图案，每一金属图案包括扫描线、及与所述扫描线连接的多个栅极；
设在所述柔性衬底基板与各个金属图案上的呈阵列式排布的多个TFT；
以及设在所述呈阵列式排布的多个TFT上的OLED发光元件。
所述衬底凹槽的深度为300-3000nm，截面呈矩形。
所述金属图案的厚度与所述衬底凹槽的深度一致。
本发明还提供一种柔性显示面板的制作方法，包括如下步骤：
步骤S1、提供一柔性衬底基板，并在所述柔性衬底基板上沉积光阻层；
步骤S2、对所述光阻层进行图案化处理，形成多个相互间隔的光阻区域，相邻两个光阻区域之间形成通孔；
步骤S3、以所述光阻区域作为掩膜，对所述柔性衬底基板进行挖槽处理，在所述通孔的对应的位置形成多个相互平行的衬底凹槽；
步骤S4、在光阻区域及柔性衬底基板上沉积金属薄膜，形成覆盖所述光阻区域的金属层、及分别嵌入所述多个相互平行的衬底凹槽内的多个金属图案；
每一金属图案包括扫描线、及与所述扫描线连接的多个栅极；
步骤S5、剥离所述光阻区域以去除光阻区域及光阻区域上的金属层；
步骤S6、在柔性衬底基板与各个嵌入衬底凹槽内的金属图案上制作出呈阵列式排布的多个TFT，并在所述呈阵列式排布的多个TFT上沉积OLED发光元件；
其中，所述通孔的侧边与光阻区域下表面的夹角为钝角，与光阻区域上表面的夹角为锐角；
其中，所述通孔的截面呈等腰梯形，且等腰梯形的下底大于上底；
其中，所述衬底凹槽的深度为300-3000nm；
其中，所述金属图案的厚度与所述衬底凹槽的深度一致。
本发明的有益效果：本发明提供的一种柔性显示面板的制作方法，先对光阻层进行图案化处理得到多个相互间隔的光阻区域，相邻两个光阻区域之间形成通孔；再以所述光阻区域作为掩膜对柔性衬底基板进行挖槽处理，在所述通孔的对应的位置形成多个相互平行的衬底凹槽；接着沉积金属薄膜后去除光阻区域及其上的金属层，得到分别嵌入所述多个相互平行的衬底凹槽内的多个金属图案；每一金属图案包括扫描线、及多个栅极；然后制作出呈阵列式排布的多个TFT、及OLED发光元件。该方法使得扫描线及栅极嵌入在柔性衬底基板内，能够有效减少扫描线在柔性显示面板 发生弯折时产生的应力缺陷，提高柔性显示面板的稳定性。本发明提供的一种柔性显示面板，其扫描线与栅极所在的金属图案嵌入柔性衬底的衬底凹槽，能够使得扫描线在柔性显示面板发生弯折时产生的应力缺陷较少，有助于提高柔性显示面板的稳定性。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的柔性显示面板的制作方法的流程图；
图2为本发明的柔性显示面板的制作方法的步骤S1的示意图；
图3为本发明的柔性显示面板的制作方法的步骤S2的示意图；
图4为本发明的柔性显示面板的制作方法的步骤S3的示意图；
图5为本发明的柔性显示面板的制作方法的步骤S4的示意图；
图6为本发明的柔性显示面板的制作方法的步骤S4所制作出的金属图案的俯视示意图；
图7为本发明的柔性显示面板的制作方法的步骤S5的示意图；
图8为本发明的柔性显示面板的制作方法的步骤S6的示意图暨本发明的柔性显示面板的剖面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种柔性显示面板的制作方法，包括如下步骤：
步骤S1、如图2所示，提供一柔性衬底基板1，并在所述柔性衬底基板1上沉积光阻层2。
具体地，所述柔性衬底基板1的材质优选聚酰亚胺(Polyimide，PI)或聚对苯二甲酸乙二酯(PET)。
步骤S2、如图3所示，通过对所述光阻层2曝光、显影来进行图案化处理，形成多个相互间隔的光阻区域20，相邻两个光阻区域20之间形成通孔21。
值得注意的是：所述通孔21的侧边与光阻区域20下表面的夹角a优 选为大于90°的钝角，而与光阻区域20上表面的夹角b则优选为尖锐的锐角。
具体地，所述通孔21的截面呈等腰梯形，且等腰梯形的下底大于上底，即等腰梯形的侧边自其上端向下同时向光阻区域20的材料内部倾斜。
步骤S3、如图4所示，以所述光阻区域20作为掩膜通过刻蚀对所述柔性衬底基板1进行挖槽处理，在所述通孔21的对应的位置形成多个相互平行的衬底凹槽11。
具体地，所述衬底凹槽11的深度优选300-3000nm，保证衬底凹槽11的深度小于柔性衬底基板1的厚度。进一步地，所述衬底凹槽11的截面呈矩形。
步骤S4、如图5所示，在光阻区域20及柔性衬底基板1上直接沉积金属薄膜，由于所述通孔21的侧边与光阻区域20下表面的夹角a为大于90°的钝角，而与光阻区域20上表面的夹角b为尖锐的锐角，所述通孔21能有效隔断金属薄膜，形成覆盖所述光阻区域20的金属层31、及分别嵌入所述多个相互平行的衬底凹槽11内与衬底凹槽11的图案相同的多个金属图案32。
进一步地，所述金属图案32的厚度与所述衬底凹槽11的深度一致。
如图6所示，每一金属图案32包括扫描线321、及与所述扫描线321连接的多个栅极322。
步骤S5、如图7所示，剥离所述光阻区域20，同时去除了覆盖所述光阻区域20的金属层31，留下所述分别嵌入多个相互平行的衬底凹槽11内与衬底凹槽11的图案相同的多个金属图案32。
在这一过程中，由于所述通孔21有效隔断了金属薄膜，所以去除光阻区域20及光阻区域20上的金属层便不会损伤到嵌入衬底凹槽11内的金属图案32。
步骤S6、如图8所示，在柔性衬底基板1与各个嵌入衬底凹槽11内的金属图案32上制作出呈阵列式排布的多个TFT T，并在所述呈阵列式排布的多个TFT T上沉积OLED发光元件D，最后进行封装。
具体地，该步骤S6包括：
在所述柔性衬底基板1与金属图案32上沉积栅极绝缘层51；
在所述栅极绝缘层51上沉积半导体有源层52；
沉积金属薄膜并做图案化处理，形成分别接触所述半导体有源层52两侧的源极531、与漏极532；所述栅极322、半导体有源层52、源极531、与漏极532构成TFT T；
依次沉积层间绝缘层54、平坦层55、及阳极57；所述阳极57通过贯穿层间绝缘层54与平坦层55的过孔V连接TFT T的漏极532；
在所述平坦层55、及阳极57上形成图案化的像素隔离层56，所述像素隔离层56覆盖部分所述平坦层55、及阳极57；
在所述像素隔离层56界定出的区域内依次沉积有机发光层58、及阴极59，所述阳极57、有机发光层58、与阴极59构成OLED发光元件D。
上述方法使得扫描线321与栅极322所在的金属图案32嵌入在柔性衬底基板1的衬底凹槽11内，相当于形成了一层金属图案32与柔性衬底基板2的复合薄膜，即扫描线321及栅极322和柔性衬底基板1成为一体，有利于在显示面板弯曲时分散扫描线321上产生的应力，从而能够有效减少扫描线321在柔性显示面板发生弯折时产生的应力缺陷，提高柔性显示面板的稳定性。
基于同一发明构思，本发明还提供一种通过上述方法制得的柔性显示面板。请参阅图8，结合图6，本发明的柔性显示面板包括：
柔性衬底基板1，所述柔性衬底基板1具有多个相互平行的衬底凹槽11；
分别嵌入所述多个相互平行的衬底凹槽11内的多个金属图案32，每一金属图案32包括扫描线321、及与所述扫描线321连接的多个栅极322；
覆盖在所述柔性衬底基板1与各个金属图案32上的栅极绝缘层51；
设在所述栅极绝缘层51上的半导体有源层52；
分别连接所述半导体有源层52两侧的源极531、与漏极532；
覆盖在所述半导体有源层52、源极531、漏极532、与栅极绝缘层51的层间绝缘层54；
覆盖所述层间绝缘层54的平坦层55；
设在平坦层55上的阳极57；所述阳极57通过贯穿层间绝缘层54与平坦层55的过孔V连接漏极532；
覆盖部分所述平坦层55、及阳极57的像素隔离层56；
以及在所述像素隔离层56界定出的区域内自下至上依次设置的有机发光层58、与阴极59。
所述栅极322、半导体有源层52、源极531、与漏极532构成TFT T；所述阳极57、有机发光层58、与阴极59构成OLED发光元件D。
具体地，所述衬底凹槽11的深度为300-3000nm，截面呈矩形，且所述金属图案32的厚度与所述衬底凹槽11的深度一致。
由于本发明的柔性显示面板将扫描线321与栅极322所在的金属图案 32嵌入在柔性衬底基板1的衬底凹槽11内，相当于形成了一层金属图案3与柔性衬底基板2的复合薄膜，即扫描线321及栅极322和柔性衬底基板1成为一体，有利于在显示面板弯曲时分散扫描线321上产生的应力，从而能够有效减少扫描线321在柔性显示面板发生弯折时产生的应力缺陷，提高柔性显示面板的稳定性。
综上所述，本发明的柔性显示面板的制作方法，先对光阻层进行图案化处理得到多个相互间隔的光阻区域，相邻两个光阻区域之间形成通孔；再以所述光阻区域作为掩膜对柔性衬底基板进行挖槽处理，在所述通孔的对应的位置形成多个相互平行的衬底凹槽；接着沉积金属薄膜后去除光阻区域及其上的金属层，得到分别嵌入所述多个相互平行的衬底凹槽内的多个金属图案，每一金属图案包括扫描线、及多个栅极；然后制作出呈阵列式排布的多个TFT、及OLED发光元件。该方法使得扫描线及栅极嵌入在柔性衬底基板内，能够有效减少扫描线在柔性显示面板发生弯折时产生的应力缺陷，提高柔性显示面板的稳定性。本发明的柔性显示面板，其扫描线与栅极所在的金属图案嵌入柔性衬底的衬底凹槽，能够使得扫描线在柔性显示面板发生弯折时产生的应力缺陷较少，有助于提高柔性显示面板的稳定性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (13)

  1. 一种柔性显示面板的制作方法，包括如下步骤：
    步骤S1、提供一柔性衬底基板，并在所述柔性衬底基板上沉积光阻层；
    步骤S2、对所述光阻层进行图案化处理，形成多个相互间隔的光阻区域，相邻两个光阻区域之间形成通孔；
    步骤S3、以所述光阻区域作为掩膜，对所述柔性衬底基板进行挖槽处理，在所述通孔的对应的位置形成多个相互平行的衬底凹槽；
    步骤S4、在光阻区域及柔性衬底基板上沉积金属薄膜，形成覆盖所述光阻区域的金属层、及分别嵌入所述多个相互平行的衬底凹槽内的多个金属图案；
    每一金属图案包括扫描线、及与所述扫描线连接的多个栅极；
    步骤S5、剥离所述光阻区域以去除光阻区域及光阻区域上的金属层；
    步骤S6、在柔性衬底基板与各个嵌入衬底凹槽内的金属图案上制作出呈阵列式排布的多个TFT，并在所述呈阵列式排布的多个TFT上沉积OLED发光元件。
  2. 如权利要求1所述的柔性显示面板的制作方法，其中，所述通孔的侧边与光阻区域下表面的夹角为钝角，与光阻区域上表面的夹角为锐角。
  3. 如权利要求2所述的柔性显示面板的制作方法，其中，所述通孔的截面呈等腰梯形，且等腰梯形的下底大于上底。
  4. 如权利要求1所述的柔性显示面板的制作方法，其中，所述衬底凹槽的深度为300-3000nm。
  5. 如权利要求4所述的柔性显示面板的制作方法，其中，所述衬底凹槽的截面呈矩形。
  6. 如权利要求1所述的柔性显示面板的制作方法，其中，所述金属图案的厚度与所述衬底凹槽的深度一致。
  7. 如权利要求1所述的柔性显示面板的制作方法，其中，所述步骤S6包括：
    在所述柔性衬底基板与金属图案上沉积栅极绝缘层；
    在所述栅极绝缘层上沉积半导体有源层；
    沉积金属薄膜并做图案化处理，形成分别接触所述半导体有源层两侧的源极、与漏极；所述栅极、半导体有源层、源极、与漏极构成TFT；
    依次沉积层间绝缘层、平坦层、及阳极；所述阳极通过贯穿层间绝缘 层与平坦层的过孔连接TFT的漏极；
    在所述平坦层、及阳极上形成图案化的像素隔离层，所述像素隔离层覆盖部分所述平坦层、及阳极；
    在所述像素隔离层界定出的区域内依次沉积有机发光层、及阴极，所述阳极、有机发光层、与阴极构成OLED发光元件。
  8. 一种柔性显示面板，包括：
    柔性衬底基板，所述柔性衬底基板具有多个相互平行的衬底凹槽；
    分别嵌入所述多个相互平行的衬底凹槽内的多个金属图案，每一金属图案包括扫描线、及与所述扫描线连接的多个栅极；
    设在所述柔性衬底基板与各个金属图案上的呈阵列式排布的多个TFT；
    以及设在所述呈阵列式排布的多个TFT上的OLED发光元件。
  9. 如权利要求8所述的柔性显示面板，其中，所述衬底凹槽的深度为300-3000nm，截面呈矩形。
  10. 如权利要求9所述的柔性显示面板，其中，所述金属图案的厚度与所述衬底凹槽的深度一致。
  11. 一种柔性显示面板的制作方法，包括如下步骤：
    步骤S1、提供一柔性衬底基板，并在所述柔性衬底基板上沉积光阻层；
    步骤S2、对所述光阻层进行图案化处理，形成多个相互间隔的光阻区域，相邻两个光阻区域之间形成通孔；
    步骤S3、以所述光阻区域作为掩膜，对所述柔性衬底基板进行挖槽处理，在所述通孔的对应的位置形成多个相互平行的衬底凹槽；
    步骤S4、在光阻区域及柔性衬底基板上沉积金属薄膜，形成覆盖所述光阻区域的金属层、及分别嵌入所述多个相互平行的衬底凹槽内的多个金属图案；
    每一金属图案包括扫描线、及与所述扫描线连接的多个栅极；
    步骤S5、剥离所述光阻区域以去除光阻区域及光阻区域上的金属层；
    步骤S6、在柔性衬底基板与各个嵌入衬底凹槽内的金属图案上制作出呈阵列式排布的多个TFT，并在所述呈阵列式排布的多个TFT上沉积OLED发光元件；
    其中，所述通孔的侧边与光阻区域下表面的夹角为钝角，与光阻区域上表面的夹角为锐角；
    其中，所述通孔的截面呈等腰梯形，且等腰梯形的下底大于上底；
    其中，所述衬底凹槽的深度为300-3000nm；
    其中，所述金属图案的厚度与所述衬底凹槽的深度一致。
  12. 如权利要求11所述的柔性显示面板的制作方法，其中，所述衬底凹槽的截面呈矩形。
  13. 如权利要求11所述的柔性显示面板的制作方法，其中，所述步骤S6包括：
    在所述柔性衬底基板与金属图案上沉积栅极绝缘层；
    在所述栅极绝缘层上沉积半导体有源层；
    沉积金属薄膜并做图案化处理，形成分别接触所述半导体有源层两侧的源极、与漏极；所述栅极、半导体有源层、源极、与漏极构成TFT；
    依次沉积层间绝缘层、平坦层、及阳极；所述阳极通过贯穿层间绝缘层与平坦层的过孔连接TFT的漏极；
    在所述平坦层、及阳极上形成图案化的像素隔离层，所述像素隔离层覆盖部分所述平坦层、及阳极；
    在所述像素隔离层界定出的区域内依次沉积有机发光层、及阴极，所述阳极、有机发光层、与阴极构成OLED发光元件。
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