WO2019048200A1 - Système optique conçu pour un dispositif de lithographie par projection - Google Patents

Système optique conçu pour un dispositif de lithographie par projection Download PDF

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Publication number
WO2019048200A1
WO2019048200A1 PCT/EP2018/072118 EP2018072118W WO2019048200A1 WO 2019048200 A1 WO2019048200 A1 WO 2019048200A1 EP 2018072118 W EP2018072118 W EP 2018072118W WO 2019048200 A1 WO2019048200 A1 WO 2019048200A1
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WO
WIPO (PCT)
Prior art keywords
pupil
optical system
exit pupil
envelope
exit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2018/072118
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German (de)
English (en)
Inventor
Alexander Winkler
Daniel Lenz
Jörg ZIMMERMANN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of WO2019048200A1 publication Critical patent/WO2019048200A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/005—Diaphragms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

Definitions

  • the invention relates to an optical system, in particular for use as an optical component in a projection exposure apparatus for EUV or VUV microlithography.
  • NA numerical aperture
  • the minimum achievable linewidth (CD) is typically determined for horizontal or vertical lines and can be described using the Modulation Transfer Function (MTF) of the optical system.
  • MTF Modulation Transfer Function
  • Lithography illumination systems as described, for example, in US 2016/0170308 A1, are known from the prior art. In this case, either an accessible in the illumination optics or even an inaccessible exit pupil can be present. In both cases, the exit pupil of the illumination system is circular.
  • lithographic projection components are known, as described, for example, in WO 2010/115500 A1. Both the entrance pupil and the exit pupil are circular.
  • the process window is extended.
  • the shape of the exit pupil of the projection objective is in lens systems in DUV or in VUV systems, which are designed, for example, for a wavelength of 100-300 nm, in particular for 157 nm, 193 nm or 248 nm, motivated by the shape of the single cell - sen. Therefore, it was convenient in these VUV and DUV systems to deliver circular pupils.
  • the surface of the mirror optimized in design or the optically used mirror in particular in the projection optics, which mainly comprises near-pupil mirrors, as well as in the pupil facet mirror of the illumination system, plays an important role ,
  • the used area of the mirrors is u.a. determined by the area A of the pupil.
  • the illumination system of the production exposure equipment must provide the entrance pupil of the projection optics, i. to deliver the right shape.
  • the exit pupil of the illumination system matches the entrance pupil of the projection optics, in particular is identical.
  • the EUV WaKo designs can provide almost any geometric shape of the entrance pill due to the facetted facetted facings, in particular through the use of field and / or pupil facet mirrors, in particular through the use of field-near and / or pupil-near facet mirrors it is possible to provide non-circular exit pupils of the illumination system.
  • Near-pupil in the context of the present invention means that a distance along the beam path between a pupil plane and the facet plane arranged near the pu, ie the so-called pupil facet mirror, is smaller than a 0.3-fold, in particular smaller than a 0, 2-fold, in particular smaller than a 0, 1-fold, a distance between the pupil plane and one of the Pu i11enebene nearest arranged field plane.
  • the optically used area can be reduced, which leads to a reduction of the production costs.
  • this object is achieved by an optical system for use as an optical component in a projection exposure apparatus for EUV microlithography, wherein the optical system has an entrance pupil and / or an exit pupil according to one embodiment and the entrance pupil and / or the exit pupil Area A and a center M and there are at least three areas in the entrance pupil and / or the exit pupil with r ⁇ > r (A).
  • r x is the distance to the center M and r (A) the Radius of a circle with the surface area A.
  • the at least three areas are not mutually coherent.
  • the at least three areas there are in particular exactly three areas, in particular at least four areas, in particular exactly four areas, in particular exactly six areas, in particular exactly eight areas.
  • the center M is the center of gravity of the entrance or the exit pupil.
  • the point of focus here is referred to as the "Schwetician".
  • the area A is the area of the entrance or exit pupil, which is defined by the border of the corresponding pupil according to the following definition, for example the definition by means of aperture stops or "partial" apertures. dazzle, is enclosed.
  • Such a deviation by at least 5% or by at least 10% of the radius of the circular shape can be at all subsequent Embodiments are used as a specific embodiment.
  • Such a design with regions with r ⁇ > r (A) results in the at least three regions, for example three or four or six or eight regions, providing the pupil with a higher NA than the maximum NA of a circular pupil having the same surface area A.
  • the entrance pupil of the projection optics is understood to mean the image of the aperture stop that arises when imaging the aperture diaphragm through the part of the imaging optics that lies between the object plane and the aperture diaphragm.
  • the exit pupil is the image of the aperture stop which results when the aperture stop is represented by the part of the imaging optics which lies between the aperture stop and the image plane.
  • the following definition is used instead for the definition of the entrance or exit pupil: If In projection optics without pupil planes defining simply z and thus using other diaphragms without “complete” aperture diaphragms, which can be regarded as “partial” aperture stops (so-called “split stops”) and which only delimit part of the light path, this is understood as the entrance pupil the projection optics the image of the partial aperture stops, which arises when the partial Aperture apertures through the part of the imaging optics, which lies between ektebene and the partial aperture stops, maps. Similarly, the exit pupil is the image of the partial aperture stops resulting from imaging the partial aperture stops through the portion of the imaging optics that lies between the image plane and the partial aperture stops.
  • the entrance pupil and / or the exit pupil is in this case given by the envelope of all adjustable pupil Shapes, the so-called adjustable "illumination settings", in the corresponding pupil plane.
  • the entrance pupil and / or the exit pupil encloses all adjustable illumination settings as an envelope.
  • Different lighting settings i. Differently defined pupil illumination distributions, ie different pupil forms, differ in the distribution of the illumination angles of the illumination light in the object field.
  • the shape of the entrance pupil and / or the exit pupil has a rectangular or a quadratic or a diamond-shaped or a pillow-shaped form.
  • the term "pupil” is used for the entrance pupil and / or the exit pupil for the sake of simplicity and scarcity.
  • the shape of the pupil according to the invention can be described in that the pupil has an area A and a center M and there are at least three areas in the pupil with r ⁇ > r (A).
  • r ' is the distance to the center M and r (A) the radius of a circle with the professionninhal A.
  • the at least three, in particular at least four areas are not mutually coherent formed.
  • the shape of the pupil can also be described by the mathematical p-norm. As an example, some forms for some p- or p-values are listed below
  • Concave means “domed", whereas convex means “arched outward”.
  • a concave shape is shown for example in FIG. 5 is shown. In this case, there are, at least in sections, areas which are "inwardly curved" in comparison with the circular shape.
  • the optical system has a shape of the entrance pupil and / or the exit pupil, in which the preferred direction of the shape is perpendicular, parallel or under one Angle ⁇ is oriented relative to a preferred direction of the optical system.
  • the preferred direction of the shape of the pupil may be one of the axes of symmetry of the geometric shape. In the case of a square or a rectangle, this could be, for example, a middle perpendicular of opposite sides. For a square, for example, this could be a diagonal, for example.
  • the axes of symmetry are horizontal, vertical, and diagonal in the plane of the drawing, and thus parallel (along the x or y axis) or diagonally (at 45 degrees to the x or y axis) arranged axes of the coordinate system arranged.
  • the preferred direction of the optical system may be a direction perpendicular to the optical axis and parallel to an axis of symmetry of an optical element of the optical system.
  • the preferred direction of the optical system may be, for example, a scan direction y ⁇ or a vertical axis x which is also in the ektebene or in the image plane, be.
  • the optical system has an entrance pupil and / or an exit pupil which has an at least partially concave edge.
  • the optical system has an entrance pupil and / or an exit pupil which has an edge which is only convex in sections, the edge however, is not consistently convex.
  • the range 1 ⁇ p ⁇ 2 is an example of such a pupil with a merely sectionally convex edge.
  • the optical system has an entrance pupil and / or an exit pupil which has an at least sectionally convex edge, the border having additional non-convex sections.
  • a pupil facet mirror for a projection exposure apparatus has a multiplicity of individual mirrors, wherein the individual mirrors are enclosed by an envelope and the envelope encloses an area A and has a center M and at least three regions within the envelope with r '> r (FIG. A) gives.
  • the distance to the center M and r (A) is the radius of a circle with the area A.
  • the at least three areas are not contiguous with each other.
  • the pupil facet mirror In addition to a facet mirror arranged exactly in a pupil plane, the pupil facet mirror also includes a facet mirror arranged close to the pupil.
  • the at least three regions in particular exactly three regions, in particular at least four regions, in particular exactly four regions, in particular exactly six regions, in particular exactly eight regions, are at the front.
  • an illumination optics for a projection exposure apparatus has an exit pupil and an optical system as described above.
  • an illumination optics for a projection exposure apparatus has a pupil facet mirror as described above.
  • a projection optics for a projection exposure apparatus has an entrance pupil and an optical system as described above.
  • a projection optics for a projection exposure apparatus has an exit pupil and an optical system as described above.
  • a projection exposure system has an exit pupil and a projection optics, as described above.
  • a projection exposure apparatus has a pupil facet mirror as described above.
  • Another embodiment of the invention is a method for producing a micro- or nanostructured device comprising the steps of providing a reticle, providing a wafer with a photosensitive layer, projecting at least a portion of the reticle onto the wafer by means of the above-described projection exposure apparatus , Developing the exposed photosensitive coating on the wafer.
  • a structured component is produced according to the method described above.
  • FIGS. 1A-1C show a schematic illustration of an overlapping region with pupils of different geometries displaced by the distance d; and an overlap function for a displacement d of the centers of the various pupil shapes: circular (solid line), square (dashed line) and 45 ° rotated square (dotted line) pupil; and an overlapping function for a first embodiment: circular (solid line), square (dashed line) and 45 ° rotated square (dotted line) pupil; and an overlap action for a second embodiment: circular (solid line), square (dashed line), and 45 ° rotated square (dotted line) pupil; and
  • Figure 5 shows a third embodiment with a concave
  • FIG. 6 shows an overlapping function for a third exemplary embodiment with a concave exit pupil according to FIG. 5: circular (solid line) and concave (dashed line) pupil, - and
  • Figure 7F is a schematic representation of an overlap area at pupils of different geometries for differentêtssett ings. and an overlap function for ID lines and 2D structures;
  • FIGS. 1A-1C show overlapping functions of the exit pupils of the projection optics, which is directly related to the Modulation Transfer Function (MTF), which can be used to
  • Fig. Fig. 1A shows a typical circular exit pupil 170, e.g. in the aforementioned US 2016/0170308 AI or WO 2010/115500 AI present.
  • FIG. 1B and FIG. IC are compared with the circular exit pupil 170 in FIG. 1A.
  • the two square pupils in Fig. 1B and FIG. ICs are chosen so that the area of the squares 173 and 174 and 175 and 176, respectively, of that of the circles 170 and 171 in FIG. 1A corresponds.
  • Fig. 2 shows the Sprint-Fielding Means (M) of the pupil of FIG. 1, the various pupil shapes of Fig. 1.
  • Circular (solid line), square (dashed line) and rotated by 45 ° square (dotted line) pupils have the same surface area.
  • the displacement d in the x-direction is the Pupil applied and on the y-axis, the corresponding overlap area.
  • An illumination pupil is typically not completely filled, but only to a certain extent, the degree of pupil filling (so-called pill fill ratio, PFR). If one approaches the theoretical resolution limit of the system, it becomes particularly clear that only the part of the illumination pupil, ie the exit pupil of the illumination system, contributes to the aerial image with interfering effect, which can still pass the entrance pupil of the PO even after the diffraction. This establishes the connection with the overlapping functions considered here.
  • Each shift of the pupil by the distance d represents the offset of the diffracted pupil on a pitch P periodic structure.
  • the pitch P (abbreviated in this application as a large "P") is not to be confused with the p-norm p (abbreviated to "p” in this application).
  • FIG. 3 shows an exemplary embodiment with an overlapping function for the different pupil shapes from FIG. 1.
  • a pupil fill level of about 22% i.e., 11% in the overlap function
  • the circular pupil (see solid line of overlap function) here already requires 14% PFR, i.
  • Fig. 5 shows another embodiment. As a continuation or generalization, one can go one step further from the rotated square 175 and move to (segment-wise) concave pupil forms 578.
  • the in Fig. The concave pupil shape 578 shown in FIG. 5 results from straight adjacent ones
  • the regions 590 have a distance r from the center M that is greater than the NA of the circular pupil 570.
  • an entrance pupil and / or an exit pupil with an area A and a center M is shown, which gives at least three areas 590, in particular at least four areas 590, in the entrance pupil and / or the exit pupil with r x > r (A) where r 'is the distance of the regions to the center M and where r (A) is the radius of a circle (570 having the area A and the at least three regions 590, in particular at least four regions 590 are not contiguous with one another.
  • an entrance pupil and / or an exit pupil with an at least partially concave edge 578 is also shown.
  • the corresponding overlap function for a pupil as shown in FIG. 5 is shown in FIG. 6 with the circular pupil analogous to the Position in FIG. 2, where circular, square and rotated by 45 ° squared pupil are compared compared.
  • the dashed line represents the overlapping function for the concave pupil of FIG. 5, the solid line shows the overlap function for the circular pupil from FIG. 1A.
  • the theoretical achievable value is approx. 3.8.
  • a value of, for example, about 3.35, which corresponds to a resolution gain by the factor f 1.67, could - depending on the system design - a realistic attainable estimate, ie for a realistic PFR> 0, for the
  • a concave pillar shape may be the limit of resolution of the system. significantly improve both horizontal and vertical structures.
  • FIGS. 7A and 7B show by way of example how illumination settings can also be defined for non-circular pupils 773 and 775.
  • Fig. FIG. 7 shows examples of resulting illumination settings where the NA of the illumination pupil is shown by the solid lines 773 and 775 and the diffraction orders by the dashed lines 774, 776, 784 and 786 for square pupils 773 and 775.
  • the hatching indicates the areas to be illuminated the pupil.
  • Figs. 7A-C show the regular square;
  • Figures 7D-F show the square rotated 45 °.
  • FIG. 7 shows the following settings: FIGS. 7A and 7D: x-dipole, FIGS. 7B and 7E: y-dipole, FIG. 7C: quasar, FIG. 7F: quadrupole.
  • Quasar and quadrupole are settings for For example, a simultaneous mapping of horizontal and vertical structures.
  • the exit pupil forms 773 and 775 described above obtain their dissolution feature by distinguishing certain diffraction directions (horizontal, vertical).
  • regular contact holes which are arranged on a square grid
  • 1D structures lines
  • Figure 8 shows how the different exit pupil shapes can produce a different ratio between 2D and 1D texture resolution limits For example, if 2D structures are more important, ie a higher resolution is required, one would choose the normal square 773. Here one can see a clear resolution gain (resolution ⁇ l / d) in the case of the 2D regular contact holes.
  • FIG. 8 shows a comparison of the overlap behavior with respect to FIG. 1D
  • the y-axis shows the geometric overlap for one pole To compare 1D (illumination pupil with 2 poles) and 2D (illumination pupil with 4 poles) correctly compare Points of different y-values together (indicated by the arrows with double head in the figure)
  • the vertical line with symbols marks values for those shown in Figs. 9A, 9B and. 9C.
  • the PFR can be estimated as the y value * 4 at the respective 5-corner symbols.
  • Figures 9A-9C show a significant increase in PFR in the case of 2D regular contact holes
  • Structural periodicity when going from a rotated by 45 ° square pupil (Fig. 9A) to a circular pupil (Fig. 9B) and from a circular pupil (Fig. 9B) to a quadratic pupil (Fig. 9C), which one sees clearly in the sizes of the hatched areas.
  • the pupils have a rotation and / or a tilting of the axes as well as a rescaling of the axes.
  • different aspect ratios are possible.
  • the above-mentioned pupil structures are particularly advantageous in micro exposure tools.
  • the pupil chambers mentioned above can also be used for VUV and DUV systems.
  • One embodiment is a VUV or DUV system with a pupil facet mirror according to the invention.
  • Fig. 10 shows a projection exposure apparatus 1001 with a first embodiment of a lighting system.
  • Fig. 10 shows a schematic section of a production exposure apparatus 1001 for microlithography known from US 2016/0170308 A1 and WO 2012/130768 A2.
  • the projection exposure apparatus 1001 comprises a radiation source 1003 and an illumination system 1002 for exposing an object field 1090.
  • the illumination system 1002 has a so-called honeycomb condenser, which consists of field facets 1013a and pupil facets 1014a.
  • an element plane 1006 arranged in the obj ect plane and exposed in FIG. 10, not shown, which carries a structure to be projected with the projection exposure apparatus 1001 for the production of microstructured or nanostructured semiconductor components.
  • the projection optics 1007 serve to image the object field 1090 into an image field 1008 in an image plane 100.
  • the structure on the reticle is imaged onto a photosensitive layer of one in the area of the image field 1008 in the image
  • Wafers which is not shown in the drawing.
  • the reticle and the wafer are scanned in the y ⁇ direction when the projection exposure apparatus 1001 is rubbed.
  • the projection exposure apparatus 1001 With the aid of the projection exposure apparatus 1001, at least part of the reticle is imaged onto a region of a photosensitive layer on the wafer for the lithographic production of a microstructured or nanostructured component, in particular a semiconductor component, for example a microchip.
  • the reticle and the wafer are synchronized in the y ⁇ - direction continuously in the scanner mode or step by step in stepper mode.
  • the radiation source 1003 is an EUV radiation source with an emitted useful radiation in the range between 5 nm and 30 nm. It can be a plasma source, for example a GDPP source - gas discharge plasma generation, gas discharge plasma produced or an LPP source - plasma generation by laser, laser produced plasma. Other EUV radiation sources, such as those based on a synchrotron or on a Free Electron Laser - FEL - are also possible.
  • EUV radiation 1070 emanating from the radiation source 1003 is collimated by a collector 1011. After the collector 1011, the EUV radiation 1070 propagates through an intermediate focus plane 1012 before impinging on a field facet mirror 1013 having a plurality of field facets 1013a. The field facet mirror 1013 is disposed in a plane of the illumination optics 1004 that is optically conjugate to the object plane 1006. After the field facet mirror 1013, the EUV radiation 1070 is reflected from a pupil facet mirror
  • the pupil facet mirror 1014 is reflected with a plurality of pupil facets 1014a.
  • the pupil facet mirror 1014 is located either in the entrance pupil plane of the projection optics 1007 or in a plane optically conjugate thereto.
  • the field facet mirror 1013 and the pupil facet mirror 1014 are constructed of a plurality of individual mirrors. In this case, the subdivision of the field facet mirror 1013 into individual mirrors can be such that each of the field facets 1013a, which in themselves illuminate the entire object field 1090, is represented by exactly one of the individual mirrors. Alternatively, it is possible to construct at least some or all of the field facets 1013a by a plurality of such individual mirrors.
  • the EUV radiation 1070 impinges on the two facet mirrors 1013, 1014 at an angle of incidence, measured normal to the mirror surface, which passes through the respective centers of the individual mirrors 1013a, 1014a, which is less than or equal to 45 °, in particular smaller or equal 25 °, can be.
  • An application under stray incidence - grazing incidence - is possible, wherein the angle of incidence may be greater than or equal to 45 °, in particular greater than or equal to 70 °.
  • the pupil facet mirror 1014 is arranged in a plane of the illumination optics 1004, which represents a pupil plane of the projection optics 1007 or is optically conjugate to a pupil plane of the projection optics 1007.
  • the field facets of the field facet mirror 1013 are superimposed on one another in the object field 1090.
  • an imaging optical assembly in the form of a transmission optics 1080 may be present as shown in FIG.
  • the field facets of the field facet mirror 1013 overlap one another in the object field 1090 - educated .
  • the last mirror 1018 of the transmission optics 1080 is a grazing incidence mirror, a so-called mirror. "grazing incidence mirror".
  • the illumination light 1070 is guided from the radiation source 1003 to the object field 1090 via a plurality of illumination channels.
  • Each of these illumination channels is assigned a field facet 1013a of the field facet mirror 1013 and one of these downstream pupil facets 1014a of the pupil facet mirror 1014.
  • the individual mirrors 1013a of the field facet mirror 1013 and the individual mirrors 1014a of the pupil facet mirror 1014 can be tiltable in terms of actuation, so that a Changing the assignment of the pupil facets 1014a to the field facets 1013a and correspondingly a changed configuration of the illumination channels can be achieved.
  • the individual mirrors of the field facet mirror 1013 can be actuated tiltable, so that a changed configuration of the illumination channels with constant assignment of the pupil facets 1014a to the field facets 1013a can be achieved.
  • the pupil facets can also be tilted.
  • Fig. 11 shows a projection exposure apparatus 1101 with a second embodiment of a lighting system.
  • Fig. 11 shows one of US 2016/0170308 AI and the US
  • EUV radiation 1170 which emanates from the radiation source 1103, is bundled by a collector 1111. After the collector 1111, the EUV radiation 1170 propagates through an intermediate focus plane 1112 before impinging on a framing facet mirror 1163 which serves for the targeted illumination of a specular reflector 1164.
  • the EUV radiation 1170 is shaped such that the EUV radiation 1170 in the object plane 1106 d illuminates the object field 1190, whereby in a pupil plane 1165 of the projection optics 1107 arranged downstream of the reticle For example, homogeneously illuminated, circular-walled pupil illumination distribution, that is, a correspondingesquesetting- resulting.
  • the effect of the specular reflector 1164 is described in detail in US 2006/0132747 AI.
  • a reflection surface of the specular reflector 1164 is divided into individual mirrors.
  • these will be Single mirror of the specular reflector 1164 to individual mirror groups, ie to facets of the specular reflector 1164, grouped. Each individual mirror group forms an illumination channel that does not completely illuminate the reticle field individually. Only the sum of all illumination channels leads to a complete and homogeneous illumination of the reticle field. Both the individual mirrors of the specular reflector 1164 and the facets of the beam-shaping facet mirror 1163 can be tilted in terms of actuation, so that different field and pupil illuminations can be set.
  • FIG. 12 shows a projection optics 1207 known from WO 2010/115500 A1 (see FIG. 11 in WO 2010/115500 A1).
  • the system shown in FIG. 11 in WO 2010/115500 A1, including description, is hereby incorporated by reference incorporated by reference.
  • the projection system has six mirrors M1, M2, M3, M4, M5 and M6, which image the object plane 1206 into the image plane 1209.
  • the following table shows the RMS of the wavefront in mX of the projection optics for exemplarily selected field points, the field points being given in the corresponding coordinates x and y in mm on the reticle. It can be clearly seen that the RMS of the wavefront is lower in the case of the quadratic pupil rotated by 45 ° than in the case of the circular pupil. Semit is improved when using the pupil RMS invention of the wavefront, thus increasing the optical performance and also extends the process window.
  • the pupil forms having an area A and a center M, wherein there are at least three areas (590), in particular at least four areas (590), in the pupil with r ⁇ > r (A), where r r is the distance to the Center point M and where r (A) is the radius of a circle (170, 570) having the area A, and wherein the at least three areas (590) are not contiguous with each other,
  • FIG. 14 of this application exemplarily shows a circular pupil 1470 having an area A, an obscuration O and a center M.
  • the obscuration O is circular.
  • the Obskura ion O can also be any contiguous area. There may also be several non-contiguous obscuration regions 0 in the pupil.
  • each of the above-described pupils in particular the exit pupil of the projection optics and / or the entrance pupil of the projection optics, in particular the various rectangular and pillow-shaped embodiments of the pupils, may have obscuration.
  • the obscuration may be any contiguous area and, for example centrally or non-centrally located in the pupil.
  • the area A also comprises the area of the obscuration O in such an obscured case.
  • the area A is only determined by the outer border of the pupil 1470 and not by the obscuration O.
  • the center M which is the area center of gravity of the area A, may also lie in an obscured area 0.
  • the above-defined quantities area A, center M, the radius r (A) and the size r are also uniquely determined in obscured optical systems.
  • anamorphic pupil instead of a circular pupule
  • the above invention can be applied analogously by taking into account rescaling of the x and y axes.
  • the anamorphic ratio given by the quotient of the NA value in the x direction divided by the NA value in the y direction is used to rescale the above-described pupil of the present invention to a resected anamorphic pupil.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)

Abstract

L'invention concerne un système optique conçu pour un dispositif de lithographie par projection comprenant une pupille d'entrée et/ou une pupille de sortie, la pupille d'entrée et/ou la pupille de sortie présentant une superficie (A) et un centre (M), et la pupille d'entrée et/ou la pupille de sortie comportant au moins trois zones pour lesquelles r` > r (A) où r` représente la distance jusqu'au centre (M) et où r(A) représente le centre d'un cercle de superficie (A), ces trois zones m'étant pas continues.
PCT/EP2018/072118 2017-09-06 2018-08-15 Système optique conçu pour un dispositif de lithographie par projection Ceased WO2019048200A1 (fr)

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DE102017215664.3 2017-09-06
DE102017215664.3A DE102017215664A1 (de) 2017-09-06 2017-09-06 Optisches System für eine Projektionsbelichtungsanlage

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WO2019048200A1 true WO2019048200A1 (fr) 2019-03-14

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
US11513266B2 (en) 2020-12-09 2022-11-29 Toyota Motor Engineering & Manufacturing North America, Inc. Systems and methods for an improved camera system using directional optics to estimate depth
US11663730B2 (en) 2021-02-19 2023-05-30 Toyota Motor Engineering & Manufacturing North America, Inc. Systems and methods for an improved camera system using a graded lens and filters to estimate depth
US11870968B2 (en) 2021-04-13 2024-01-09 Toyota Motor Engineering & Manufacturing North America, Inc. Systems and methods for an improved camera system using filters and machine learning to estimate depth
US12014510B2 (en) 2021-02-03 2024-06-18 Toyota Motor Engineering & Manufacturing North America, Inc. Systems and methods for an improved camera system using filters for depth estimation of grayscale images

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DE102021202847A1 (de) * 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage für die Lithografie
DE102023213267A1 (de) * 2023-12-22 2025-06-26 Carl Zeiss Smt Gmbh Vergrößernde abbildende Optik für ein Metrologiesystem zur Untersuchung von Objekten

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WO2010115500A1 (fr) 2009-03-30 2010-10-14 Carl Zeiss Smt Ag Optique d'imagerie et installation d'exposition de projection pour microlithographie comportant une optique d'imagerie de ce type
US20110001947A1 (en) 2008-02-15 2011-01-06 Carl Zeiss Smt Ag Facet mirror for use in a projection exposure apparatus for microlithography
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WO2012130768A2 (fr) 2011-03-25 2012-10-04 Carl Zeiss Smt Gmbh Groupement de miroirs
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US20160170308A1 (en) 2013-09-23 2016-06-16 Carl Zeiss Smt Gmbh Facet mirror for a projection exposure apparatus
US9500958B2 (en) 2009-02-12 2016-11-22 Carl Zeiss Smt Gmbh Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type

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JP2007305821A (ja) * 2006-05-12 2007-11-22 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法
DE102010043498A1 (de) * 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives

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EP0589103A1 (fr) * 1991-08-09 1994-03-30 Canon Kabushiki Kaisha Méthode de projection d'une image et procédé de fabrication de dispositifs semi-conducteurs utilisant cette méthode
US20060132747A1 (en) 2003-04-17 2006-06-22 Carl Zeiss Smt Ag Optical element for an illumination system
US8576376B2 (en) 2007-10-26 2013-11-05 Carl Zeiss Smt Gmbh Imaging optical system and projection exposure system for microlithography
US20110001947A1 (en) 2008-02-15 2011-01-06 Carl Zeiss Smt Ag Facet mirror for use in a projection exposure apparatus for microlithography
US9500958B2 (en) 2009-02-12 2016-11-22 Carl Zeiss Smt Gmbh Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
WO2010115500A1 (fr) 2009-03-30 2010-10-14 Carl Zeiss Smt Ag Optique d'imagerie et installation d'exposition de projection pour microlithographie comportant une optique d'imagerie de ce type
WO2011095209A1 (fr) * 2010-02-03 2011-08-11 Carl Zeiss Smt Gmbh Installation d'exposition par projection pour microlithographie
WO2012130768A2 (fr) 2011-03-25 2012-10-04 Carl Zeiss Smt Gmbh Groupement de miroirs
US20160170308A1 (en) 2013-09-23 2016-06-16 Carl Zeiss Smt Gmbh Facet mirror for a projection exposure apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11513266B2 (en) 2020-12-09 2022-11-29 Toyota Motor Engineering & Manufacturing North America, Inc. Systems and methods for an improved camera system using directional optics to estimate depth
US12014510B2 (en) 2021-02-03 2024-06-18 Toyota Motor Engineering & Manufacturing North America, Inc. Systems and methods for an improved camera system using filters for depth estimation of grayscale images
US11663730B2 (en) 2021-02-19 2023-05-30 Toyota Motor Engineering & Manufacturing North America, Inc. Systems and methods for an improved camera system using a graded lens and filters to estimate depth
US11870968B2 (en) 2021-04-13 2024-01-09 Toyota Motor Engineering & Manufacturing North America, Inc. Systems and methods for an improved camera system using filters and machine learning to estimate depth

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