WO2019109258A1 - Dispositif à delo à gamme de couleurs élevée - Google Patents

Dispositif à delo à gamme de couleurs élevée Download PDF

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Publication number
WO2019109258A1
WO2019109258A1 PCT/CN2017/114653 CN2017114653W WO2019109258A1 WO 2019109258 A1 WO2019109258 A1 WO 2019109258A1 CN 2017114653 W CN2017114653 W CN 2017114653W WO 2019109258 A1 WO2019109258 A1 WO 2019109258A1
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WO
WIPO (PCT)
Prior art keywords
layer
light emitting
oled device
color gamut
high color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/114653
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English (en)
Chinese (zh)
Inventor
汪少安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Application filed by Shenzhen Royole Technologies Co Ltd filed Critical Shenzhen Royole Technologies Co Ltd
Priority to PCT/CN2017/114653 priority Critical patent/WO2019109258A1/fr
Priority to TW107143769A priority patent/TWI684273B/zh
Publication of WO2019109258A1 publication Critical patent/WO2019109258A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers

Definitions

  • the present invention belongs to the field of display technologies, and relates to an OIED device, and more particularly to a high color gamut OLED device.
  • BT2020 display color standard BT2020
  • the current method of implementing BT2020 is mainly to use more vivid luminescent materials, including deep red or dark blue organic luminescent materials or quantum dots.
  • the red and blue light of BT2020 can be obtained by adjusting the position of the luminescence peak, the spectral broadening caused by molecular thermal relaxation is difficult to narrow the half-width of the luminescent material to within 30 nm, and the green light has not yet met the requirements of BT2020.
  • Dye due to the use of TADF materials with molecular structure distortion as high-efficiency phosphorescent dyes for green and asymmetric ligands, molecular thermal relaxation is more serious, and the intrinsic half-width of green light is usually above 60-80 nm. The intrinsic color coordinates are around (0.33, 0.60).
  • the red and blue light of BT2020 can be obtained by adjusting the position of the luminescence peak, the spectral broadening caused by molecular thermal relaxation is difficult to narrow the half-width of the luminescent material to within 30 nm, and the green light has not yet met the requirements of BT2020.
  • Dye due to the use of TADF materials with molecular structure distortion as high-efficiency phosphorescent dyes for green and asymmetric ligands, molecular thermal relaxation is more serious, and the intrinsic half-width of green light is usually above 60-80 nm. The intrinsic color coordinates are around (0.33, 0.60).
  • the technical problem to be solved by the present invention is that, in view of the defects of the prior art, a high color OLED device with color coordinate values of environmentally friendly and green pixels capable of satisfying the color coordinate value of BT2020 is provided, and the deep blue and deep red are matched.
  • the blue light pixels and red light pixels prepared by the light material can realize an ultra-wide color gamut display that satisfies the BT2020 color gamut requirement.
  • a high color gamut OLED device comprising an anode, an organic layer, a cathode and a light extraction layer in sequence;
  • the organic layer comprises a hole injection layer, a hole transport layer, a color light emitting layer, a color light compensation layer, a hole blocking layer, An electron transport layer and an electron injection layer;
  • the color light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer respectively disposed;
  • the color light compensation layer includes a corresponding red light emitting layer and a green light emitting layer respectively Red optical compensation layer and green optical compensation layer;
  • the anode reflectance is 70-100%, and the cathode reflectance is 30-70%;
  • the total thickness of the organic layer corresponding to the green optical compensation layer and the green light emitting layer is such that the optical path of the organic layer is equal to twice the green wavelength.
  • the thickness of the organic layer corresponding to the green optical compensation layer and the green light emitting layer is preferably 544-612 nm.
  • the green optical compensation layer has a thickness of 70 nm to 90 nm.
  • the green optical compensation layer has a thickness of 80 nm.
  • the green light emitting layer has a thickness of 20-60 nm.
  • the green light emitting layer has a thickness of 40 nm.
  • the hole transport layer comprises a first mobility layer with high mobility and a second hole transport layer with exciton blocking; the thickness of the first hole transport layer is 20-400 nm; the thickness of the second hole transport layer is 20 nm.
  • the anode is selected from M/ITO or ITO/M/ITO, and M is selected from Ag, Al, Ni or Ti.
  • the anode be selected from Ag/ITO or ITO/Ag/ITO.
  • the anode thickness is selected from 60 nm to 200 nm.
  • the cathode is selected from Ag or Ag alloy.
  • the Ag alloy select at least one of an Ag-Mg alloy, an Ag-Li alloy, an Ag-Al alloy, an Ag-Yb alloy, and an Ag-Sm alloy.
  • the cathode thickness is selected to be 10-30 nm.
  • the cathode thickness is 15 nm.
  • the reflectance of the anode in the 400-700 nm band is preferred. It is 86-92%.
  • the cathode reflectance is 40-60%.
  • the RGB full-color OLED display screen prepared by the device of the invention has the color coordinate value of the G pixel to meet the color coordinate value requirement of the BT2020, and is matched with the R and B pixels prepared by the deep blue and deep red light materials, and can satisfy the BT2020 color.
  • the total thickness of the required vapor deposition is minimized when performing the shadow mask evaporation, thereby reducing the shadow mask cleaning frequency and improving the production efficiency. Extend the life of the shadow mask, reduce the cost of making the Mask, improve the utilization of materials, and reduce the cost of OLED materials.
  • FIG. 1 is a schematic structural view of an embodiment of the present invention
  • FIG. 2 is a schematic view showing light reflection between a cathode and an anode in an embodiment of the present invention.
  • a high color gamut OLED device includes an anode 1, an organic layer 2, a cathode 6 and a light extraction layer 7 in sequence;
  • the organic layer 2 includes a hole injection layer 201, and hole transport a layer 3, a color light emitting layer 5, a color light compensation layer 4, a hole blocking layer 601, an electron transport layer 701, and an electron injection layer 801;
  • the color light emitting layer 5 includes red light emitting layers 501 and green light respectively disposed a light-emitting layer 502 and a blue light-emitting layer 503;
  • the color compensation layer 4 includes red light corresponding to each The red optical compensation layer 401 and the green optical compensation layer 402 of the layer 501 and the green light-emitting layer 502;
  • the anode reflectance is 70-100%, and the cathode reflectivity is 30-70%; corresponding to the green optical compensation
  • the total thickness of the organic layer of layer 402 and green light-emitting layer 502 is such that the optical path of the organic layer is equal
  • the basic structure is an anode 1, an organic layer 2, a cathode 6, and a light extraction layer 7.
  • the anode 1 uses a high reflectivity material as an electrode, and its reflectance requirement is 70-100%
  • the cathode 6 adopts a semi-transflective material, and its reflectance is 30-70%, so the light will be between the two electrodes. Multiple reflections.
  • the anode has a reflectance of 86-92% in the 400-700 nm band at which total reflection is achieved.
  • the anode 1 is selected from M/ITO or ITO/M/ITO, and M is selected from Ag, Al, Ni or Ti.
  • the anode 1 is selected from Ag/ITO or ITO/Ag/ITO, that is, M is preferably Ag.
  • the above two anode 1 structures include a three-layer structure in sequence: ITO 101, Ag 102, and ITO 103. It can also be a two-layer structure: Ag 102, ITO 103.
  • ITO/Ag (100 nm)/ITO has an anode reflectance of 86%-92% in the 400-700 nm band, and preferably an average anode reflectance of 90% in the 550 nm band.
  • M/ITO or ITO/M/ITO the ITO before M is to enhance the adhesion between the substrate and M.
  • the ITO after M is to improve the anode work function and facilitate hole injection.
  • the selection of the thickness of the anode 1 varies depending on the structure of the anode 1, the thickness of the M/ITO is relatively thin, and the thickness of the ITO/M/ITO is relatively thick, and generally 60 nm to 200 nm is selected.
  • the anode 1 is ITO/Ag/ITO, and its thickness is selected to be 200 nm.
  • the material of the cathode 6 is generally an alloy of Ag or Ag, that is, the Ag alloy is selected from at least one of an Ag-Mg alloy, an Ag-Li alloy, an Ag-Al alloy, an Ag-Yb alloy, and an Ag-Sm alloy, and has a thickness of Between 10-30nm, the higher the thickness, the lower the light transmittance, the higher the reflectivity, the enhanced the microcavity, the lower the half-peak width of the luminescence peak, the higher the color purity, and the lower the current efficiency.
  • the cathode thickness is preferably 12-18 nm, the cathode reflectance is preferably 40-60%, most preferably the cathode reflectance is 50%, and the thickness of the cathode 6 is preferably 15 nm, and the light transmittance is about 50%.
  • the thickness of the RGB device under different microcavity conditions can be calculated according to the above formula.
  • the thickness of the fixed first hole transport layer + the second hole transport layer + the green optical compensation layer is 500, and the thickness of each film layer is calculated as follows:
  • first hole transport layer 302 second hole transport layer 401: red light optical compensation layer 402: green optical compensation layer 403: blue optical compensation layer
  • the first microcavity (k ⁇ 1) is generally not used, and the first ITO layer 101, the Ag layer 102, the second ITO layer 103, the hole injection layer 201, and the empty of the anode 1 are not used.
  • the film thicknesses of the hole transport layer 3, the red light emitting layer 501, the green light emitting layer 502, the blue light emitting layer 503, the hole blocking layer 601, the electron transport layer 701, the electron injection layer 801, the cathode 6, and the light extraction layer 7 are relatively fixed. Can not be arbitrarily changed, otherwise it will have a serious impact on other performance of the screen. Therefore, the red optical compensation layer 401, the green optical compensation layer 402, and the blue optical compensation layer 403 become thickness-adjustable layers.
  • the red light takes the third microcavity
  • the blue light takes the fourth microcavity
  • the green light takes the fourth microcavity.
  • the hole transport layer 3 includes a high mobility first hole transport layer 301 and an exciton blocking second hole transport layer 302; since holes are injected from the ITO into the first hole transport layer 301, and then sequentially transmitted
  • the second hole transport layer 302, the red light optical compensation layer 401, the green light compensation layer 402, the red light emitting layer 501, the green light emitting layer 502, and the blue light emitting layer 503 are transferred to the hole transport layer 3 (first
  • the thickness of the hole transport layer 301 + the second hole transport layer 302 is selected to be 420 nm, and the second hole transport layer 302 is in contact with the blue light emitting layer 503, so the second hole transport layer 302 is a high Eg material to block blue light.
  • the second hole transport layer 302 has a thickness of 20 nm, and a material having a high hole mobility is used as the first hole transport layer 301, the first hole The transport layer has a thickness of 20 to 400 nm; and the first hole transport layer has a thickness of preferably 400 nm.
  • the thickness of the organic layer corresponding to the green optical compensation layer and the green light-emitting layer is 544-612 nm, and the thickness of the organic layer corresponding to the green optical compensation layer and the green light-emitting layer is preferably 576 nm.
  • the green optical compensation layer has a thickness of 70 nm to 90 nm, and preferably the green optical compensation layer has a thickness of 80 nm.
  • the green light emitting layer has a thickness of 20 to 60 nm. Preferably, the green light-emitting layer has a thickness of 40 nm.

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un dispositif à DELO à gamme de couleurs élevée, comprenant séquentiellement une anode, une couche organique, une cathode et une couche d'extraction de lumière. La couche organique comprend une couche d'injection de trous, une couche de transport de trous, une couche d'émission de lumière de couleur, une couche de compensation de lumière de couleur, une couche de blocage de trous, une couche de transport d'électrons et une couche d'injection d'électrons. La couche d'émission de lumière de couleur comprend une couche d'émission de lumière rouge, une couche d'émission de lumière verte et une couche d'émission de lumière bleue disposées respectivement. La couche de compensation de lumière de couleur comprend une couche de compensation de lumière rouge et une couche de compensation de lumière verte correspondant à la couche d'émission de lumière rouge et à la couche d'émission de lumière verte, respectivement. La réflectance de l'anode est comprise entre 70 et 100 %, et la réflectance de la cathode est comprise entre 30 et 70 %. L'épaisseur totale de la couche organique correspondant à la couche de compensation de lumière verte et à la couche d'émission de lumière verte est satisfaisante. Le chemin optique de la couche organique est égal à deux fois la longueur d'onde de la lumière verte. La présente invention concerne un dispositif à DELO écologique à gamme de couleurs élevée, pouvant répondre aux exigences de valeur de coordonnées de couleur de BT2020 et, combiné à des pixels de lumière bleue et à des pixels de lumière rouge préparés à partir de matériaux de lumière bleu foncé et de lumière rouge foncé, un affichage d'une gamme de couleurs ultra-large répondant aux exigences de gamme de couleurs de BT2020 peut être obtenu.
PCT/CN2017/114653 2017-12-05 2017-12-05 Dispositif à delo à gamme de couleurs élevée Ceased WO2019109258A1 (fr)

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Application Number Priority Date Filing Date Title
PCT/CN2017/114653 WO2019109258A1 (fr) 2017-12-05 2017-12-05 Dispositif à delo à gamme de couleurs élevée
TW107143769A TWI684273B (zh) 2017-12-05 2018-12-05 高色域oled裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/114653 WO2019109258A1 (fr) 2017-12-05 2017-12-05 Dispositif à delo à gamme de couleurs élevée

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020258854A1 (fr) * 2019-06-27 2020-12-30 昆山国显光电有限公司 Panneau d'affichage et dispositif d'affichage
CN112928151A (zh) * 2021-04-19 2021-06-08 安徽熙泰智能科技有限公司 一种硅基真实rgb显示器件

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112767840B (zh) 2021-01-29 2023-01-20 昆山国显光电有限公司 显示模组及显示装置

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US20070286944A1 (en) * 2006-06-13 2007-12-13 Itc Inc., Ltd. Fabrication of full-color oled panel using micro-cavity structure
KR100796603B1 (ko) * 2006-11-28 2008-01-21 삼성에스디아이 주식회사 유기전계발광소자 및 그의 제조방법
CN103700776A (zh) * 2013-12-31 2014-04-02 北京维信诺科技有限公司 一种有机发光显示器件
CN106158914A (zh) * 2016-07-29 2016-11-23 京东方科技集团股份有限公司 Oled阵列基板及其制作方法、oled显示面板
CN106531896A (zh) * 2016-12-13 2017-03-22 上海天马有机发光显示技术有限公司 有机发光显示器件及其制造方法、以及有机发光显示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020258854A1 (fr) * 2019-06-27 2020-12-30 昆山国显光电有限公司 Panneau d'affichage et dispositif d'affichage
CN112928151A (zh) * 2021-04-19 2021-06-08 安徽熙泰智能科技有限公司 一种硅基真实rgb显示器件

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TW201926675A (zh) 2019-07-01

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