WO2019148733A1 - Cellule solaire à couches minces - Google Patents

Cellule solaire à couches minces Download PDF

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Publication number
WO2019148733A1
WO2019148733A1 PCT/CN2018/090710 CN2018090710W WO2019148733A1 WO 2019148733 A1 WO2019148733 A1 WO 2019148733A1 CN 2018090710 W CN2018090710 W CN 2018090710W WO 2019148733 A1 WO2019148733 A1 WO 2019148733A1
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WO
WIPO (PCT)
Prior art keywords
layer
electrode layer
groove
thin film
back electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/090710
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English (en)
Chinese (zh)
Inventor
赵树利
郭逦达
李新连
陈涛
杨立红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Apollo Ding Rong Solar Technology Co Ltd
Original Assignee
Beijing Apollo Ding Rong Solar Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Apollo Ding Rong Solar Technology Co Ltd filed Critical Beijing Apollo Ding Rong Solar Technology Co Ltd
Priority to JP2018555611A priority Critical patent/JP2020508559A/ja
Priority to EP18769577.0A priority patent/EP3748696A1/fr
Priority to KR1020187030617A priority patent/KR20190094288A/ko
Priority to US16/089,874 priority patent/US20200303572A1/en
Publication of WO2019148733A1 publication Critical patent/WO2019148733A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the present disclosure relates to the field of solar cell technologies, and in particular, to a thin film solar cell.
  • Solar thin film batteries also known as “solar chips” or “photovoltaic cells”, are optoelectronic semiconductor components that directly generate electricity using sunlight.
  • One of the steps in the preparation process of the thin film solar cell is to use at least 3 laser/mechanical scribing processes (named P1 scribing, P2 scribing, P3 scribing according to the order of scribing), and the entire thin film solar energy
  • the battery is divided into a plurality of battery cells, and a series or parallel connection between the plurality of battery cells is achieved.
  • Some embodiments of the present disclosure provide a thin film solar cell including a substrate and a plurality of battery cells disposed on the substrate, each of the plurality of battery cells including a back electrode layer disposed in sequence a light absorbing layer, a buffer layer, and an upper electrode layer, wherein a first groove penetrating the back electrode layer is provided between the back electrode layers of any two adjacent ones of the plurality of battery cells
  • the first recess is filled with an insulating portion to insulate between the back electrode layers of adjacent battery cells;
  • each of the plurality of battery cells is provided with the light absorption through And a second recess of the buffer layer, the upper electrode layer of one of the adjacent two battery cells covering the buffer layer of the battery cell and extending to the battery cell Inside the second recess, contacting the back electrode layer of the other of the two adjacent battery cells, thereby connecting the adjacent two battery cells in series, the adjacent two of the batteries Open between units Three grooves, the upper electrode layer of the third groove of the battery cell of the two adjacent insulating space
  • FIG. 1 is a schematic structural view of a thin film solar cell according to the present disclosure
  • FIG. 2 is a schematic view showing a preparation process of the thin film solar cell of the present disclosure.
  • the P1, P2, and P3 scribing processes are realized by laser or mechanical scribing. Due to the existing scribing process technology level and cost control factors, the width and accuracy of the P1 to P3 scribing lines are difficult to be significantly improved, resulting in death. The area of the area cannot be effectively reduced, ultimately affecting the light conversion efficiency of the thin film solar cell.
  • a thin film solar cell includes a substrate 10 and a plurality of battery cells disposed on the substrate 10.
  • Each of the plurality of battery cells includes a back electrode layer 20, a light absorbing layer 30, a buffer layer 40, and an upper electrode layer 50 which are sequentially disposed.
  • a first recess 60 penetrating the back electrode layer 20 is disposed between the back electrode layers 20 of two adjacent battery cells.
  • the first recess 60 is filled with an insulating portion 70 to insulate between the back electrode layers 20 of the adjacent two battery cells.
  • Each of the battery cells is provided with a second recess 80 penetrating the light absorbing layer 30 and the buffer layer 40.
  • the upper electrode layer 50 covers the buffer layer 40 and extends to the second recess 80 to contact the back electrode layer 20 of another adjacent battery unit, thereby being connected in series with the adjacent another battery unit .
  • a third groove 90 is opened between the adjacent two battery cells, and the third groove 90 insulates the upper electrode layer 50 of the adjacent two battery cells.
  • a portion of the first upper electrode layer 51 extending into the second recess 80 covers the insulating portion 70; in other embodiments of the present disclosure, the first upper electrode A portion of the layer 51 that extends into the second groove 80 does not cover the insulating portion 70. That is, in some embodiments of the present disclosure, the second grooves 80 may or may not overlap with the first grooves 60 formed by the first scribe (P1 scribe).
  • the width of the insulating portion is represented by m.
  • m and d1 satisfy the following condition: m>d1>0.
  • the reason why it is necessary to define m>d1 is to prevent the portion of the first upper electrode layer 51 extending to the second recess 80 from coming into contact with the first back electrode layer 21 to cause a short circuit.
  • m and d1 satisfy the following condition: m-d1 ⁇ 30 ⁇ m, which can better avoid such short circuit.
  • the material of the substrate 10 is not limited and may be glass, stainless steel or a flexible material.
  • the thickness of the substrate 10 is also not limited.
  • the substrate 10 functions to carry a solar cell.
  • the material of the back electrode layer 20 may be a metal Mo, Ti, Cr, Cu or a transparent conductive layer.
  • the transparent conductive layer includes one or more of aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (AZO), and indium-doped tin oxide (ITO).
  • the thickness of the back electrode layer 20 is not limited. In some embodiments of the present disclosure, the back electrode layer 20 has a thickness of 200 nm to 800 nm. In some embodiments of the present disclosure, the thickness of the insulating portion 70 is the same as the thickness of the back electrode layer 20. In other embodiments of the present disclosure, the thickness of the insulating portion 70 may also be greater than the thickness of the back electrode layer 20 to effectively prevent the formation of a short circuit.
  • the material of the light absorbing layer 30 is one of copper indium gallium selenide, copper indium selenide, and copper indium gallium sulfide.
  • the thickness of the light absorbing layer 30 is not limited. In some embodiments of the present disclosure, the light absorbing layer 30 has a thickness of 0.5 ⁇ m to 3 ⁇ m.
  • the material of the upper electrode layer 50 is one of transparent conductive layers AZO, BZO, and ITO.
  • the thickness of the upper electrode layer 50 is not limited. In some embodiments of the present disclosure, the upper electrode layer 50 has a thickness of 100 nm to 1 ⁇ m.
  • the description of the light absorbing layer 30 can be referred to the description of the first light absorbing layer 31 and the second light absorbing layer 32 described above.
  • the buffer layer 40 reference may be made to the descriptions of the first buffer layer 41 and the second buffer layer 42 described above.
  • the description of the upper electrode layer 50 can be referred to the description of the first upper electrode layer 51 and the second upper electrode layer 52 described above. I will not repeat them here.
  • the manufacturing method of the thin film solar cell of Embodiment 3 is substantially the same as that of Embodiment 1, except that the width d1 of the partially exposed portion of the insulating portion through the second groove; and the first groove and the second concave The width of the groove and the third groove.
  • This embodiment 4 provides a thin film solar cell.
  • the preparation method of the thin film solar cell is as follows:

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

Une cellule solaire à couches minces comprend une base et une pluralité d'unités de cellule disposées au niveau de la base. Chaque unité de cellule comprend une couche de contact arrière, une couche d'absorption de lumière, une couche tampon et une couche de contact avant qui sont agencées de manière séquentielle. Un premier évidement est ménagé entre les couches de contact arrière de deux unités de cellule adjacentes quelconques et s'étend à travers celles-ci. Une partie d'isolation est remplie dans le premier évidement. Chaque unité de cellule comporte un deuxième évidement s'étendant à travers la couche d'absorption de lumière et la couche tampon. La couche de contact avant de chaque unité de cellule s'étend dans son deuxième évidement pour entrer en contact avec la couche de contact arrière de l'unité de cellule adjacente à celle-ci. Un troisième évidement est formé entre les deux unités de cellule adjacentes, de telle sorte que les couches de contact avant des deux unités de cellule adjacentes sont espacées et isolées l'une de l'autre.
PCT/CN2018/090710 2018-02-01 2018-06-11 Cellule solaire à couches minces Ceased WO2019148733A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018555611A JP2020508559A (ja) 2018-02-01 2018-06-11 薄膜太陽電池
EP18769577.0A EP3748696A1 (fr) 2018-02-01 2018-06-11 Cellule solaire à couches minces
KR1020187030617A KR20190094288A (ko) 2018-02-01 2018-06-11 박막 태양 전지
US16/089,874 US20200303572A1 (en) 2018-02-01 2018-06-11 Thin film solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810102076.3A CN108565303A (zh) 2018-02-01 2018-02-01 薄膜太阳能电池组件
CN201810102076.3 2018-02-01

Publications (1)

Publication Number Publication Date
WO2019148733A1 true WO2019148733A1 (fr) 2019-08-08

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PCT/CN2018/090710 Ceased WO2019148733A1 (fr) 2018-02-01 2018-06-11 Cellule solaire à couches minces

Country Status (6)

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US (1) US20200303572A1 (fr)
EP (1) EP3748696A1 (fr)
JP (1) JP2020508559A (fr)
KR (1) KR20190094288A (fr)
CN (1) CN108565303A (fr)
WO (1) WO2019148733A1 (fr)

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CN111403544A (zh) * 2018-12-27 2020-07-10 北京汉能光伏投资有限公司 受损太阳能电池芯片回收方法及装置
JP2022085070A (ja) * 2020-11-27 2022-06-08 株式会社リコー 光電変換モジュール、電子機器、及び電源モジュール
CN112786737A (zh) * 2021-01-26 2021-05-11 凯盛光伏材料有限公司 Cigs薄膜太阳能电池组件及其刻划方法
CN116888744A (zh) 2021-11-09 2023-10-13 株式会社东芝 太阳能电池、多结型太阳能电池、太阳能电池模块及太阳能电池发电系统
CN114335360B (zh) * 2022-01-10 2023-05-05 华能新能源股份有限公司 一种免划刻大面积钙钛矿太阳能电池的制备方法
JPWO2024047795A1 (fr) 2022-08-31 2024-03-07

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CN104916717A (zh) * 2014-03-14 2015-09-16 台积太阳能股份有限公司 太阳能电池及其制造方法

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JP2020508559A (ja) 2020-03-19
EP3748696A1 (fr) 2020-12-09
CN108565303A (zh) 2018-09-21
US20200303572A1 (en) 2020-09-24
KR20190094288A (ko) 2019-08-13

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