WO2019205217A1 - 像素采集电路及光流传感器 - Google Patents

像素采集电路及光流传感器 Download PDF

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Publication number
WO2019205217A1
WO2019205217A1 PCT/CN2018/088260 CN2018088260W WO2019205217A1 WO 2019205217 A1 WO2019205217 A1 WO 2019205217A1 CN 2018088260 W CN2018088260 W CN 2018088260W WO 2019205217 A1 WO2019205217 A1 WO 2019205217A1
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Prior art keywords
signal
pixel
storage module
column
light intensity
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PCT/CN2018/088260
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English (en)
French (fr)
Inventor
陈守顺
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Omnivision Sensor Solution Shanghai Co Ltd
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Celepixel Technology Co Ltd
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Priority to JP2020552018A priority Critical patent/JP7099783B2/ja
Priority to EP18916050.0A priority patent/EP3761631B1/en
Priority to SG11202009813XA priority patent/SG11202009813XA/en
Publication of WO2019205217A1 publication Critical patent/WO2019205217A1/zh
Priority to US17/030,864 priority patent/US11122232B2/en
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
    • G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/707—Pixels for event detection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Definitions

  • the present invention relates to the field of image acquisition technologies, and in particular, to a pixel collection circuit and an optical flow sensor.
  • the optical flow method can determine the motion of the target object based on the image information. It can be used in many fields such as military aerospace, traffic supervision, information science, meteorology and medicine.
  • optical flow The concept of optical flow was first proposed by Gibson in 1950.
  • the object can be imaged by the photosensitive element.
  • the points in the resulting image correspond one-to-one with the points on the object.
  • the image brightness mode in the corresponding image frame sequence will show a flow.
  • the flow of this image brightness mode can be referred to as optical flow.
  • the optical flow algorithm has been improved in many versions, but its optical flow constraint equation is still the main constraint.
  • the parameters in the optical flow constraint equation include the lateral gradient values of the pixel points of the optical flow to be calculated, the longitudinal gradient values, and the change in intensity of the pixel within a relatively short time difference.
  • the traditional optical flow calculation is mostly based on frame calculation.
  • the frame calculation will generate a lot of redundant data information, and the optical flow calculation will obtain the lateral gradient value, the vertical gradient value and the light intensity.
  • the value is changed, all the pixel information is processed, which adds a lot of parallel operations to the image processing, which reduces the speed of motion analysis of the target object.
  • short-term delays can cause large differences in analysis results from object motion, so increasing the speed of analysis becomes more important for high-speed moving target objects.
  • the present invention provides a pixel acquisition circuit and an optical flow sensor in an effort to address or at least alleviate at least one of the problems present.
  • a pixel collection circuit comprising: a light intensity detector adapted to output a first electrical signal indicative of an intensity of an optical signal illuminating thereon in real time; a first state storage module, An input end is coupled to the light intensity detector, the first output end is coupled to the row request line, and the second output end is coupled to the column request line, and is adapted to enter activation when the change of the first electrical signal satisfies a predetermined condition State and store the activation state, and respectively send a row request signal and/or a column request signal to the row request line and the column request line in the active state, and is further adapted to acquire at least one neighboring pixel of the pixel acquisition circuit in an activated state.
  • the circuit sends a pulse signal;
  • the second state storage module has a first input coupled to the at least one of its neighboring pixel acquisition circuits, and an output coupled to the first state storage module, adapted to receive at least one proximity
  • the pulse signal of the pixel acquisition circuit enters the passive activation state and stores the passive activation state, and sends a notification to the first state storage in the passive activation state a module, wherein the first state storage module respectively sends a row request signal and/or a column request signal to the row request line and the column request line; the light intensity signal acquisition and storage module, the first input end and the light intensity detector
  • the output terminal is coupled to the first state storage module, the third input terminal is coupled to the second state storage module, and is adapted to be stored and output according to the state of the pixel collection circuit.
  • the first electrical signal is coupled to the time signal line, the second input end is coupled to the first state storage module, and the third input end is coupled to the time signal storage module.
  • the second state storage module is coupled to be adapted to store and output a corresponding time signal according to a state of the pixel collection circuit.
  • the method further includes: a light intensity varying amplifier, wherein the input end is coupled to the output end of the light intensity detector, and is adapted to preprocess the first electrical signal to generate a second electrical signal; a dual threshold filter having an output coupled to the output of the light intensity varying amplifier, adapted to determine whether the change in the second electrical signal satisfies a predetermined condition; and the first state storage module coupled to the dual threshold filtering And adapted to enter an active state when the change of the second electrical signal satisfies a predetermined condition.
  • an optical flow sensor comprising: a pixel collection circuit array comprising a plurality of pixel collection circuits as described above; a pixel row signal communication unit adapted to be used for rows from a pixel collection circuit array The request signal is responsive, and is further adapted to output a row address for obtaining a line response; the pixel column signal communication unit is adapted to respond to the column request signal from the pixel collection circuit array, and is further adapted to output the column address of the column response and the corresponding a light intensity signal and a time signal; a time control unit adapted to output a first time signal to the pixel acquisition circuit array through the time signal line; a central adjustment and control unit adapted to control the row address, the column address, the time signal, and the light intensity signal Output.
  • the pixel unit in the pixel collection circuit array in the optical flow sensor detects the change of the light intensity in the visual field in real time, and triggers the pixel unit to enter the active activation state when the perceived change of the light intensity satisfies a predetermined condition.
  • the activated pixel unit simultaneously emits a pulse signal to four or more pixel units in its periphery, and activates the peripheral pixel unit in an inactive state into a passive activation state.
  • the light intensity information and time information of the pixel unit and its peripherally activated pixel unit are sampled and stored and output to the subsequent image acquisition system.
  • the light intensity of the corresponding pixel unit at a certain moment in the field of view and the intensity of the required peripheral pixel unit and the light intensity value of the same pixel unit at different times can be collected, thereby obtaining the light in the optical flow algorithm.
  • the flow constraint equation parameters that is, the time domain and the spatial domain gradient value of the pixel unit.
  • the extraction algorithm parameters are implemented by hardware, and the parallel operation in the back-end data processing is reduced. It can effectively improve the recognition processing speed of high-speed moving objects.
  • FIG. 1 shows a schematic diagram of an optical flow sensor 100 in accordance with some embodiments of the present invention
  • FIG. 2 shows a schematic diagram of a pixel collection circuit 200 in accordance with some embodiments of the present invention
  • 3A-3C illustrate schematic views of a light intensity detector 210, respectively, in accordance with some embodiments of the present invention.
  • FIGS. 4A-4C show schematic diagrams of a light intensity varying amplifier 260, respectively, in accordance with some embodiments of the present invention.
  • FIG. 1 shows a schematic diagram of an optical flow sensor 100 in accordance with some embodiments of the present invention.
  • the optical flow sensor 100 can be applied to high speed moving object detection and tracking scenes to extract optical flow algorithm parameters.
  • the optical flow sensor 100 is coupled to an external image acquisition system to transmit the extracted optical flow algorithm parameters to an external image acquisition system for subsequent calculation.
  • the optical flow sensor 100 includes at least a pixel collection circuit array 110, a pixel row signal communication unit 120, a pixel column signal communication unit 130, a time control unit 140, and a central adjustment and control unit 150.
  • the pixel collection circuit array 110 is composed of a plurality of identical pixel acquisition circuits (or "pixel units") of one or two dimensions, and the structure of the pixel collection circuit is shown in FIG. A 3 x 3 pixel collection circuit array is shown in Figure 1, but is not limited thereto.
  • Each pixel acquisition circuit detects the light intensity information in the field of view in real time, and the pixel acquisition circuit is activated when the relative change in the intensity of the light is detected and exceeds a certain threshold.
  • the intensity of the light detected by the pixel acquisition circuit is changed.
  • the threshold can be adjusted by the high-pass filter for different applications to ensure that only changes in light intensity that reach a certain threshold are considered "moving" and detected.
  • the pixel acquisition circuit thus activated is referred to as an actively activated pixel unit.
  • the actively activated pixel unit emits a pulse signal to four or more pixel units in its periphery, causing the peripheral pixel unit in an inactive state to enter a passive activation state.
  • the pixel unit (i, j) is in an active state, which emits a pulse signal to four pixel units of the upper, lower, left, and right sides (as shown in FIG. 1). Shown), the surrounding pixel units (i-1, j), (i+1, j), (i, j-1), (i, j+1) are in a passive activation state.
  • the pixel unit whether active or passively activated, samples and stores its light intensity and time information in the pixel unit when it is activated, and reads it when the pixel unit is selected.
  • the pixel row signal communication unit 120 is responsible for managing the pixel collection circuit array 110 in the row direction to ensure that only when the pixel unit of the row has an activated pixel unit, the row of pixel acquisition circuits is selected, and at the same time, only one row of pixel acquisition circuits Selected and read.
  • the operation processing of the pixel collection circuit array 110 by the pixel row signal communication unit 120 includes, but is not limited to, responding to the line request signal from the pixel collection circuit array 110, returning the line response signal to the corresponding pixel collection circuit; and outputting the line The row address of the response.
  • the pixel row signal communication unit 120 includes a row signal response communication module 122 and a row address collection unit 124.
  • the row signal response communication module 122 receives the row request signal from at least one pixel acquisition circuit in the pixel collection circuit array 110, and outputs a line response signal to one of the row request signals.
  • the line signal response communication module 122 may use a scanner to sequentially respond to multiple row request signals; of course, a plurality of row request signals may also be randomly responded, regardless of the response, to avoid conflicts, only once. Respond to a line request signal.
  • the row address acquisition unit 124 encodes the row address at which the line response is output.
  • the pixel column signal communication unit 130 is responsible for managing the pixel collection circuit array 110 in the column direction and processing the activated pixel unit to ensure that only the activated pixel unit is present on the column of pixel collection circuits, the column pixel collection circuit It will be selected, and at the same time only one column of pixel acquisition circuits is selected and read. Further, the pixel column signal communication unit 130 may also report the light intensity information and time information stored by the activated pixel unit to an external image acquisition system.
  • the operation processing of the pixel collection circuit array 110 by the pixel column signal communication unit 130 includes, but is not limited to: responding to the column request signal from the pixel collection circuit array 110, returning the column response signal to the corresponding pixel collection circuit; and outputting the column The column address of the response and the corresponding light intensity signal and time signal.
  • the pixel column signal communication unit 130 includes a column signal response communication module 132, a column address acquisition module 134, and a column output selection control module 136.
  • the column signal response communication module 132 receives the column request signals from at least one of the pixel acquisition circuits in the pixel collection circuit array 110, and outputs a column response signal to one of the column request signals.
  • the column signal response communication module 132 can sequentially respond to the plurality of column request signals through the scanner, or can randomly respond to the plurality of column request signals, regardless of the form of the column response, in order to avoid conflicts, only one column is responded at a time.
  • Request signal The column address acquisition module 134 encodes the column address of the output column response.
  • the column output selection control module 136 controls the output order of the light intensity signal, the time signal, and the column address.
  • the time control unit 140 generates a first time signal that is continuous in time, and outputs the first time signal to the pixel collection circuit array 110 through the time signal line.
  • the central adjustment and control unit 150 controls the output of the above row address, column address, time signal, and light intensity signal.
  • the central adjustment and control unit 150 can control the intensity of the corresponding pixel unit of the target moving object at a certain moment in the output view according to the requirements of the subsequent processing device.
  • FIG. 2 shows a schematic diagram of a pixel collection circuit 200 in accordance with some embodiments of the present invention.
  • the pixel collection circuit 200 includes at least a light intensity detector 210, a first state storage module 220, a second state storage module 230, a light intensity signal acquisition and storage module 240, and a time information storage module 250.
  • the first input end of the first state storage module 220 is coupled to the light intensity detector 210, the first output end is coupled to the row request line, the second output end is coupled to the column request line, and the second state is stored.
  • the first input end of the module 230 is coupled to the at least one adjacent pixel collecting circuit, and the output end thereof is coupled to the first state storage module 220; the first input end of the light intensity signal collecting and storing module 240 and the light intensity detector 210
  • the second input terminal is coupled to the first state storage module 220, the third input terminal is coupled to the second state storage module 230, and the first input terminal and the time signal line of the time information storage module 250 are coupled.
  • the second input end is coupled to the first state storage module 220, and the third input end is coupled to the second state storage module 230.
  • the pixel collection circuit 200 further includes a light intensity varying amplifier 260 and a dual threshold filter 270, which are sequentially disposed between the light intensity detector 210 and the first state storage module 220.
  • the input end of the light intensity varying amplifier 260 is coupled to the output end of the light intensity detector 210
  • the output end of the dual threshold filter 270 is coupled to the output end of the light intensity varying amplifier 260.
  • the first input of the first state storage module 220 is coupled to the dual threshold filter 270. as shown in picture 2.
  • the light intensity detector 210 outputs a first electrical signal characterizing the intensity of the optical signal illuminating thereon in real time, that is, the light intensity detector 210 converts the detected photo current into a first electrical signal, the first electrical signal Corresponding changes occur in real time based on the detected change in light intensity.
  • the light intensity detector 210 can be implemented as an active logarithmic photodetector that converts the photocurrent into a continuous time voltage signal in logarithmic relationship with it and can increase the bandwidth of the photodetector by negative feedback.
  • the light intensity detector 210 can also be implemented as a passive logarithmic photodetector, or a method of superimposing multiple layers of transistors to achieve a greater voltage to current conversion gain for the photodetector.
  • 3A through 3C show schematic views of some of the light intensity detectors 210, respectively, in accordance with an embodiment of the present invention.
  • the photodetector 210 includes an anode-grounded photodiode (PD 1 ) and a first transistor (T 1 ), and a source of the first transistor (T 1 ) is connected to a photodiode (PD 1 ) cathode.
  • the drain and gate are connected to a power supply (VDD).
  • VDD power supply
  • photodiode PD 1 generates current I after receiving an illumination signal.
  • the voltage change generated between the source and the gate of T 1 is linearly related to lnI.
  • the first electrical signal output by the photodetector in this embodiment is in a logarithmic relationship with the intensity of the incident optical signal.
  • the photo detector 210 includes a grounded anode of the photodiode PD 1, a first transistor T 1 and a second transistor T 2.
  • the source of the first transistor T 1 is connected to the power supply VDD, and its gate and drain are connected to the drain of the second transistor T 2 .
  • the source of the second transistor T 2 is cathode-connected to the photodiode PD 1 .
  • the photodetector 210 comprises a grounded anode of the photodiode PD 1, N number of transistors connected in series (where, N ⁇ 2), and a first amplifier A 1.
  • the source of the first transistor is connected to the cathode of the photodiode PD 1
  • the source of the Nth transistor is connected to the power supply VDD
  • the drain of each of the second to Nth transistors is connected to the first transistor.
  • the source, the gate of each of the 2nd to Nth transistors is connected to the drain.
  • the first amplifier A 1 is connected between the cathode of the photodiode PD 1 and the gate of the first transistor.
  • the present invention can also employ a variety of well-known high-real-time photodetectors, which are not described herein.
  • the conventional photodetection technology usually requires capacitor charging, and then continuous exposure (capacitance continuous discharge), and then the accumulated light intensity is determined according to the remaining capacity of the capacitor.
  • the photodetector 210 according to the present invention does not require an additional exposure time when generating a first electrical signal representative of the intensity of the optical signal. Therefore, the photodetector 210 can output the first electrical signal without delay.
  • the intensity change amplifier 260 preprocesses the first electrical signal to generate a second electrical signal.
  • the pre-processing includes a process of isolating the DC component and amplifying the AC component to amplify the first electrical signal.
  • the pre-processing of the light intensity varying amplifier 260 is used to increase the sensitivity of the pixel acquisition circuit 200 to light intensity detection.
  • the intensity varying amplifier 260 employs a switched capacitor amplifying circuit to isolate the DC component of the output voltage of the front end photodetector 210 and provide a gain by setting the ratio of the two capacitors to the AC component.
  • the intensity varying amplifier 260 is implemented using a resistive feedback amplifier or a correlated double sampling circuit. 4A-4C show schematic diagrams of a light intensity varying amplifier 260, in accordance with some embodiments of the present invention.
  • the intensity varying amplifier 260 includes a second amplifier A 2 , a first resistor R 1 , and a second resistor R 2 .
  • the input positive pole of the second amplifier A 2 is connected to the output end of the photodetector 210, the input negative pole is connected with a pull-down first resistor R 1 , and the second resistor R 2 is connected between the output end and the input negative pole.
  • the intensity varying amplifier 260 is implemented by a correlated double sampling circuit. Comprising: 3, its drain connected to the output end of the optical intensity detector 210 of a third transistor T; fourth transistor T 4, the drain is connected the output terminal of the optical intensity detector 210; a first capacitor C 1, a first end Connected to the source of the third transistor T 3 , the second end of which is grounded; the second capacitor C 2 , the first end of which is connected to the source of the fourth transistor T 4 , the second end of which is grounded; the fifth transistor ( T 5 ), the drain thereof is connected to the first end of the first capacitor C 1 , the gate thereof is connected to the gate of the sixth transistor T 6 ; the sixth transistor T 6 , the drain of the second capacitor C 2 One end is connected; the third amplifier A 3 has an input positive terminal connected to the source of the fifth transistor T 5 and an input negative terminal connected to the source of the sixth transistor T 6 .
  • the intensity varying amplifier 260 includes a fourth amplifier A 4 , a third capacitor C 3 , a fourth capacitor C 4 , and a first switch K 1 .
  • the first end of the third capacitor C 3 is connected to the output end of the photodetector 210; the input negative pole of the fourth amplifier A 4 is connected to a fixed potential, and the input positive pole is connected to the second end of the third capacitor C 3 ;
  • the four capacitor C 4 and the first switch K 1 are connected in parallel between the input positive terminal and the output terminal of the fourth amplifier A 4 .
  • the present invention may also employ other well-known light intensity varying amplifiers, any light intensity variation known to or known to those skilled in the art.
  • the implementation of the amplifier is within the protection scope of the present invention and will not be described herein.
  • the double threshold filter 270 determines whether the change in the first electrical signal (i.e., the second electrical signal) processed by the light intensity varying amplifier 260 satisfies a predetermined condition.
  • the dual threshold filter 270 can be implemented by a time continuous comparator that detects intensity enhancement or attenuation by setting forward and negative bidirectional thresholds.
  • the dual threshold filter 270 can determine whether the second electrical signal is below a negative threshold, or above a forward threshold by arranging two voltage comparators, when the second electrical signal is below a negative threshold When it is higher than the forward threshold, it is judged that the change of the second electrical signal satisfies a predetermined condition. I will not repeat them here.
  • each pixel unit has three states: an active activation state, a passive activation state, and an inactive state, and the active activation state and the passive activation state are collectively referred to as an activation state.
  • the first state storage module 220 stores the active activation state and the inactive state of the pixel unit; the second state storage module 230 stores the passive activation state and the inactive state of the pixel unit.
  • the pixel unit When the double threshold filter 270 determines that the change of the processed first electrical signal (ie, the second electrical signal) satisfies a predetermined condition, the pixel unit is triggered to enter the active activation state, and at this time, the first state storage module 220 enters the active state. Activate the state and store the active activation state. According to one embodiment of the invention, communication between the pixel acquisition circuit and the peripheral circuitry is performed by the first state storage module 220. The first state storage module 220 transmits a row request signal to the row request line in an active activation state. As described above, after receiving the row request signal, the pixel row signal communication unit 120 in the optical flow sensor randomly selects one row from the row request of the received multi-line pixel circuit to respond.
  • the second input end of the first state storage module 220 is coupled to the row response line, and the third input terminal is coupled to the column response line.
  • the active state active active state or passive active state
  • the first state storage module 220 receives the row response signal returned by the pixel row signal communication unit 120
  • the column request signal is sent to the column request line
  • the light intensity signal is notified.
  • the storage module 240 outputs the first electrical signal as the light intensity signal
  • the notification time information module 260 outputs the corresponding time signal.
  • the first state storage module 220 transmits a pulse signal to at least one adjacent pixel collection circuit of the pixel collection circuit in an activated state, so that the pixel acquisition circuit in an inactive state is in a passive activation state.
  • the first state storage module 220 sends a pulse signal to the four adjacent pixel units of the pixel unit up, down, left, and right in an active state to make it up, down, left, and right.
  • Four adjacent pixel cells are in a passive activation state.
  • the first state storage module 220 also deactivates the row response signal and the column response signal from the row response line and the column response line, respectively, that is, enters an inactive state.
  • the third output end of the first state storage module 220 is coupled to the light intensity varying amplifier 260, and sends a reset signal to the light intensity varying amplifier 260 when the pixel collecting circuit enters an active state or a deactivated state.
  • the first state storage module 220 includes a first latch that is used to store an active state and an inactive state.
  • the first latch is set when the second electrical signal satisfies a predetermined condition, that is, the pixel unit enters an active state; the first latch is reset when the row response signal and the column response signal are simultaneously received, that is, the pixel unit Entering an inactive state; each time the first latch is set or reset, the first state storage module sends a reset signal to the light intensity varying amplifier 260.
  • the pixel unit When receiving a pulse signal from at least one neighboring pixel acquisition circuit, the pixel unit enters a passive activation state, at which time the second state storage module 230 enters a passive activation state and stores the passive activation state.
  • the pixel units communicate with each other through the second state storage module 230.
  • each pixel unit communicates with four pixel units of up, down, left, and right of its periphery, and receives at least one pixel unit of four pixel units from top, bottom, left, and right of its periphery.
  • the pixel unit enters a passive activation state. In the passive activation state, the pixel unit does not send a pulse signal to other pixel units.
  • the pixel unit in the passive activation state can continue to feel the change of the light intensity, and can also be excited into the active activation state before the line response is received.
  • the second state storage module 230 sends a notification to the first state storage module 220 in the passive activation state, so that the first state storage module sends a row request signal to the row request line in the activated state.
  • the pixel row signal communication unit 120 in the optical flow sensor randomly selects one row from the row request of the received multi-line pixel circuit to respond.
  • the second input of the second state storage module 230 is coupled to the row response line, and the third input is coupled to the column response line (not shown in FIG. 2).
  • the second state storage module 220 sends the column request signal to the column request line through the first state storage module 220, and simultaneously informs the light intensity signal collection and
  • the storage module 240 outputs the first electrical signal as the light intensity signal, and the notification time information module 260 outputs the corresponding time signal.
  • the second state storage module 230 can also be directly coupled to the first state storage module 220.
  • the first state storage module 220 receives the row response signals from the row response line and the column response line. And column response signals. That is to say, the response signal inside the pixel unit can be obtained by directly connecting the line response line and/or the column response line by other modules, or can be uniformly allocated to each module through the first state storage module 220 (such as the second The state storage module 230, the light intensity signal acquisition and storage module 240, and the time information storage module 250) are not limited in the embodiments of the present invention.
  • the second state storage module 230 when the second state storage module 230 simultaneously receives the row response signal and the column response signal from the row response line and the column response line, respectively, the pixel unit releases the passive activation state. And when the pixel unit is in the passive activation state, the second state storage module 230 sends a reset signal to the light intensity varying amplifier 260 through the first state storage module 220.
  • the second state storage module 230 includes a second latch that is used to store the passive activation state and the inactive state.
  • the second latch Upon receiving a pulse signal from at least one adjacent pixel acquisition circuit, the second latch is set and the pixel unit enters a passive activation state; when the row response signal and the column response signal are simultaneously received, the second latch is Upon reset, the pixel unit enters an inactive state; when the second latch is reset, the second state storage module 230 transmits a reset signal to the intensity varying amplifier 260.
  • the light intensity signal acquisition and storage module 240 stores and outputs the first electrical signal as a light intensity signal according to the state of the pixel acquisition circuit. Wherein, when the pixel acquisition circuit is in an inactive state, the light intensity signal acquisition and storage module 240 samples the first electrical signal in real time; since the pixel acquisition circuit enters an active state (active activation state or passive activation state), the light intensity signal is collected and The storage module 240 stores the sampled first electrical signal until receiving the line response signal transmitted via the first state storage module 220 or the second state storage module 230, and outputs the first electrical signal stored during this period as the light intensity signal.
  • the time information storage module 250 stores and outputs a corresponding time signal according to the state of the pixel collection circuit.
  • the first time signal from the time signal line is sampled in real time when the pixel acquisition circuit is in an inactive state; the time information storage module 250 stores the sampled time after the pixel acquisition circuit enters an active state (active activation state or passive activation state).
  • the first time signal until receiving the line response signal transmitted via the first state storage module 220 or the second state storage module 230, and outputs the first time signal stored during this period as a time signal.
  • the pixel unit in the pixel collection circuit array in the optical flow sensor 100 detects the change of the light intensity in the visual field in real time, and triggers the pixel unit to enter the active activation when the perceived change of the light intensity satisfies a predetermined condition. status.
  • the activated pixel unit simultaneously emits a pulse signal to four or more pixel units in its periphery, and activates the peripheral pixel unit in an inactive state into a passive activation state.
  • the light intensity information and time information of the pixel unit and its peripherally activated pixel unit are sampled and stored and output to the subsequent image acquisition system.
  • the light intensity of the corresponding pixel unit at a certain moment in the field of view and the intensity of the required peripheral pixel unit and the light intensity value of the same pixel unit at different times can be collected, thereby obtaining the light in the optical flow algorithm.
  • the flow constraint equation parameters that is, the time domain and the spatial domain gradient value of the pixel unit.
  • the extraction algorithm parameters are implemented by hardware, and the parallel operation in the back-end data processing is reduced. It can effectively improve the recognition processing speed of high-speed moving objects, thereby efficiently analyzing the moving speed and direction of moving objects, and solving the problem of delay analysis of high-speed moving objects in the field of view, such as collision avoidance systems, drones, and unmanned ground vehicles. Improve the efficiency and accuracy of system judgment.
  • modules or units or components of the devices in the examples disclosed herein may be arranged in a device as described in this embodiment, or alternatively may be positioned differently than the devices in this example. In one or more devices.
  • the modules in the foregoing examples may be combined into one module or may be further divided into a plurality of sub-modules.
  • modules in the devices of the embodiments can be adaptively changed and placed in one or more devices different from the embodiment.
  • the modules or units or components of the embodiments may be combined into one module or unit or component, and further they may be divided into a plurality of sub-modules or sub-units or sub-components.
  • any combination of the features disclosed in the specification, including the accompanying claims, the abstract and the drawings, and any methods so disclosed, or All processes or units of the device are combined.
  • Each feature disclosed in this specification (including the accompanying claims, the abstract and the drawings) may be replaced by alternative features that provide the same, equivalent or similar purpose.
  • the invention discloses together:
  • A8 The pixel collection circuit of A7, wherein the second state storage module comprises: a second latch adapted to be set when receiving a pulse signal from the at least one adjacent pixel acquisition circuit, and simultaneously receiving The row response signal and the column response signal are reset; and the second state storage module is further adapted to transmit a reset signal to the light intensity varying amplifier when the second latch is reset.
  • A9 The pixel collection circuit of any of A2-8, wherein the pre-processing comprises a process of isolating the DC component and amplifying the AC component.
  • the photodetector comprises: an anode-grounded photodiode (PD 1 ); a first transistor (T 1 ), a source thereof and a photodiode (PD) 1 ) Cathode connection with its drain and gate connected to the power supply (VDD).
  • the photodetector comprises: an anode-grounded photodiode (PD 1 ); a first transistor (T 1 ), a source and a power supply (VDD) Connected, its gate and drain are connected to the drain of the second transistor (T 2 ); the second transistor (T 2 ) has its source connected to the cathode of the photodiode (PD 1 ).
  • the pixel acquisition circuit of any of A1-9 wherein the photodetector comprises: an anode-grounded photodiode (PD 1 ); N transistors in series, wherein N ⁇ 2, the first transistor The source is connected to the cathode of the photodiode (PD 1 ), the source of the Nth transistor is connected to the power source (VDD), and the drain of each of the 2nd to Nth transistors is connected to the source of the previous transistor. The gate of each of the second to Nth transistors is connected to the drain; the first amplifier (A 1 ) is connected between the cathode of the photodiode (PD 1 ) and the gate of the first transistor.
  • the photodetector comprises: an anode-grounded photodiode (PD 1 ); N transistors in series, wherein N ⁇ 2, the first transistor The source is connected to the cathode of the photodiode (PD 1 ), the source of the Nth transistor is connected to the power source (VDD), and the drain of each
  • the intensity change amplifier comprises: a second amplifier (A 2 ) having an input positive terminal connected to an output end of the photodetector and an input negative connection There is a pull-down first resistor (R 1 ), and a second resistor (R 2 ) is connected between the output end and the input negative pole, and is adapted to pre-process the first electrical signal output by the photodetector.
  • the change in light intensity amplifier comprises: a third transistor (T 3), a drain connected to the output of said light intensity detector; and a fourth transistor (T 4 ), the drain thereof is connected to the output end of the light intensity detector;
  • the first capacitor (C 1 ) has a first end connected to the source of the third transistor (T 3 ) and a second end grounded;
  • a capacitor (C 2 ) having a first end connected to a source of the fourth transistor (T 4 ) and a second end grounded thereto;
  • a fifth transistor (T 5 ) having a drain and a first capacitor (C 1 ) One end is connected, the gate thereof is connected to the gate of the sixth transistor (T 6 );
  • the sixth transistor (T 6 ) has a drain connected to the first end of the second capacitor (C 2 ); and a third amplifier ( A 3 ), the input positive terminal is connected to the source of the fifth transistor (T 5 ), and the input negative terminal is connected to the source of the sixth transistor

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Abstract

本发明公开了一种像素采集电路，至少包括：光强检测器、第一状态存储模块、第二状态存储模块、光强信号采集及存储模块和时间信息存储模块。本发明一并公开了包含该像素采集电路的光流传感器。

Description

像素采集电路及光流传感器 技术领域
本发明涉及图像采集技术领域，尤其涉及像素采集电路及光流传感器。
背景技术
随着信息技术的不断发展，计算机视觉及图像信息处理变得越来越重要。其中，光流法可以基于图像信息而确定目标对象的运动情况。其可以应用在军事航天、交通监管、信息科学、气象和医学等多个领域中。
光流的概念最初由Gibson于1950年首先提出。实物可以由感光元件成像。所成图像中的点与实物上点一一对应。当目标对象在三维场景中运动时，所对应的图像帧序列中图像亮度模式会表现出流动。这种图像亮度模式的流动可以称为光流。经过多年的研究，光流算法得到了多种版本的改进，但其光流约束方程依然是主要的约束条件。光流约束方程中的参数包括所要计算光流的像素点的横向梯度值、纵向梯度值以及在相对较短时间差内该像素点的光强变化。传统的光流法计算多基于帧计算，当视域中的背景静止或变化很小时，帧计算会产生大量冗余的数据信息，在进行光流计算取得横向梯度值、纵向梯度值及光强变化值时，所有的像素信息都会被处理，从而为图像处理增加了大量并行运算，降低了对目标物体运动分析的速度。尤其是对于高速运动的物体，短时间的延迟会导致分析结果与物体运动有较大差异，因此提高分析速度对于高速运动的目标物体变得更重要。
鉴于上述原因，需要一种新的光流采集方案。
发明内容
本发明提供一种像素采集电路及光流传感器，以力图解决或至少缓解上面存在的至少一个问题。
根据本发明的一个方面，提供了一种像素采集电路，包括：光强检测器，适于实时输出表征照射在其上的光信号的强度的第一电信号；第一状态存储模块，其第一输入端耦接到光强检测器，其第一输出端与行请求线耦接，其第二输出端与列请求线耦接，适于在第一电信号的变化满足预定条件时进入激活状态并存储该激活状态，并在激活状态下分别发送行请求信号和/或列请求信号至行请求线和列请求线，还适于在激活状态下向该像素采集电路的至少一个邻近像素采集电路发送脉冲信号；第二状态存储模块，其第一输入端与至少一个其邻近像素采集电路耦接，其输出端与所述第一状态存储模块耦接，适于在接收到来自至少一个邻近像素采集电路的脉冲信号时，进入被动激活状态并存储该被动激活状态，并在被动激活状态下发送通知给所述第一状态存储模块，以便所述第一状态存储模块分别发送行请求信号和/或列请求信号至行请求线和列请求线；光强信号采集及存储模块，其第一输入端与所述光强检测器的输出端耦接，其第二输入端与所述第一状态存储模块耦接，其第三输入端与所述第二状态存储模块耦接，适于根据该像素采集电路的状态存储并输出第一电信号作为光强信号；以及时间信息存储模块，其第一输入端与时间信号线耦接，其第二输入端与所述第一状态存储模块耦接，其第三输入端与所述第二状态存储模块耦接，适于根据该像素采集电路的状态存储并输出对应的时间信号。
可选地，在根据本发明的像素采集电路中，还包括：光强变化放大器，其输入端与所述光强检测器的输出端耦接，适于对第一电信号进行预处理，生成第二电信号；双阈值过滤器，其输出端与光强变化放大器的输出端耦接，适于判断第二电信号的变化是否满足预定条件；以及第一状态存储模块耦接到双阈值过滤器，适于在第二电信号的变化满足预定条件时进入激活状态。
根据本发明的又一个方面，提供了一种光流传感器，包括：像素采集电路阵列，包括多个如上所述的像素采集电路；像素行信号通信单元，适于对来自像素采集电路阵列的行请求信号进行响应，还适于输出得到行响应的行地址；像素列信号通信单元，适于对来自像素采集电路阵列的列请求信号进行响应，还适于输出得到列响应的列地址及对应的光强信号和时间信号；时间控制单元，适于通过时间信号线向像素采集电路阵列输出第一时间信号； 中央调节与控制单元，适于控制行地址、列地址、时间信号和光强信号的输出。
综上，根据本发明的方案，光流传感器中的像素采集电路阵列中的像素单元实时检测视域中的光强变化，并在感知的光强变化满足预定条件时触发像素单元进入主动激活状态。被激活的像素单元同时向其周边的四个或更多像素单元发出脉冲信号，将处于未激活状态的周边像素单元激活进入被动激活状态。在像素单元被激活的时刻，该像素单元及其周边被动激活的像素单元的光强信息和时间信息被采样存储并输出给后续图像采集系统。
基于该光流传感器，可采集视域中目标运动物体在某一时刻的对应像素单元光强及所需周边像素单元光强和同一像素单元在不同时刻光强值，从而获得光流算法中光流约束方程参数，即像素单元的时域、空域梯度值。这样，通过硬件实现了提取算法参数，减少后端数据处理中的并行运算。可有效提高对高速运动物体的识别处理速度。
附图说明
为了实现上述以及相关目的，本文结合下面的描述和附图来描述某些说明性方面，这些方面指示了可以实践本文所公开的原理的各种方式，并且所有方面及其等效方面旨在落入所要求保护的主题的范围内。通过结合附图阅读下面的详细描述，本公开的上述以及其它目的、特征和优势将变得更加明显。遍及本公开，相同的附图标记通常指代相同的部件或元素。
图1示出了根据本发明一些实施例的光流传感器100的示意图；
图2示出了根据本发明一些实施例的像素采集电路200的示意图；
图3A至图3C分别示出了根据本发明一些实施例的光强检测器210的示意图；以及
图4A至图4C分别示出了根据本发明一些实施例的光强变化放大器260的示意图。
具体实施方式
下面将参照附图更详细地描述本公开的示例性实施例。虽然附图中显示了本公开的示例性实施例，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施例所限制。相反，提供这些实施例是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。
图1示出了根据本发明一些实施例的光流传感器100的示意图。该光流传感器100能够应用于高速运动物体检测与跟踪场景，以提取光流算法参数。根据一种实现方式，该光流传感器100与外部的图像采集系统相耦接，将提取的光流算法参数传送给外部图像采集系统，以进行下一步的计算。本发明的实施例对此不作限制。如图1所示，该光流传感器100至少包括：像素采集电路阵列110、像素行信号通信单元120、像素列信号通信单元130、时间控制单元140和中央调节与控制单元150。
根据本发明的实现方式，像素采集电路阵列110由一维或二维的多个相同的像素采集电路(或称为“像素单元”)组成，像素采集电路的结构参见图2。图1中示出了一个3×3的像素采集电路阵列，但不限于此。每个像素采集电路通过实时地检测视野中的光强信息，在感知到光强发生相对变化并超出一定阈值时本像素采集电路被激活，可选地，像素采集电路所能检测的光强变化的阈值可以通过高通滤波器根据不同应用场合进行调节，以确保只有达到某个阈值的光强变化才被认为是“运动”并被检测到。这样激活的像素采集电路称为主动激活的像素单元。主动激活的像素单元会向其周边的四个或更多个像素单元发出脉冲信号，使处于未激活状态的周边像素单元进入被动激活状态。如图1中所示，像素单元(i,j)处于激活状态，其向周围上、下、左、右四个像素单元发出脉冲信号(如图1中
Figure PCTCN2018088260-appb-000001
所示)，使周围像素单元(i-1,j)、(i+1,j)、(i,j-1)、(i,j+1)处于被动激活状态。不管是主动激活还是被动激活的像素单元，都会在被激活的时刻，将其光强和时间信息采样并存储在本像素单元内，并在本像素单元被选中的时候读出。
像素行信号通信单元120负责在行方向上管理像素采集电路阵列110，保证只有本行像素采集电路上有被激活的像素单元时，该行像素采集电路才会被选中，而且同时只有一行像素采集电路被选中并读出。像素行信号通信单元120对像素采集电路阵列110的操作处理包括但不限于：对来自像素采集 电路阵列110的行请求信号进行响应，返回行响应信号给相应的像素采集电路；以及，输出得到行响应的行地址。
根据本发明的一个实施例，像素行信号通信单元120包括行信号响应通信模块122和行地址采集单元124。其中，行信号响应通信模块122接收来自像素采集电路阵列110中至少一个像素采集电路的行请求信号，并输出行响应信号给其中一个行请求信号。可选地，行信号响应通信模块122可采用扫描器对多个行请求信号进行顺序响应；当然，也可以对多个行请求信号进行随机响应，不论是哪种响应，为避免冲突，一次只响应一个行请求信号。行地址采集单元124编码输出得到行响应的行地址。
相应地，像素列信号通信单元130负责在列方向上管理像素采集电路阵列110并处理被激活的像素单元，以保证只有本列像素采集电路上有被激活的像素单元时，本列像素采集电路才会被选中，而且同时只有一列像素采集电路被选中并读出。此外，像素列信号通信单元130还可以将被激活像素单元所存储的光强信息和时间信息报告给外部的图像获取系统。像素列信号通信单元130对像素采集电路阵列110的操作处理包括但不限于：对来自像素采集电路阵列110的列请求信号进行响应，返回列响应信号给相应的像素采集电路；以及，输出得到列响应的列地址及对应的光强信号和时间信号。
根据本发明的又一个实施例，像素列信号通信单元130包括：列信号响应通信模块132、列地址采集模块134和列输出选择控制模块136。其中，列信号响应通信模块132接收来自像素采集电路阵列110中至少一个像素采集电路的列请求信号，并输出列响应信号给其中一个列请求信号。列信号响应通信模块132可以通过扫描器对多个列请求信号进行顺序响应，也可以对多个列请求信号进行随机响应，不论采用何种形式的列响应，为避免冲突，一次只响应一个列请求信号。列地址采集模块134编码输出得到列响应的列地址。列输出选择控制模块136控制光强信号、时间信号和列地址的输出顺序。
时间控制单元140生成一个在时间上连续的第一时间信号，并通过时间信号线向像素采集电路阵列110输出该第一时间信号。
中央调节与控制单元150控制上述行地址、列地址、时间信号和光强信号的输出。可选地，中央调节与控制单元150可根据后续的处理设备的需求 来控制输出视域中目标运动物体在某一时刻的对应像素单元光强。
下面结合图2对像素采集电路阵列110中的像素采集电路进行进一步说明。图2示出了根据本发明一些实施例的像素采集电路200的示意图。
根据本发明的实施例，像素采集电路200至少包括：光强检测器210、第一状态存储模块220、第二状态存储模块230、光强信号采集及存储模块240和时间信息存储模块250。其中，第一状态存储模块220的第一输入端耦接到光强检测器210，其第一输出端与行请求线耦接，其第二输出端与列请求线耦接；第二状态存储模块230的第一输入端与至少一个其邻近像素采集电路耦接，其输出端与第一状态存储模块220耦接；光强信号采集及存储模块240的第一输入端与光强检测器210的输出端耦接，其第二输入端与第一状态存储模块220耦接，其第三输入端与第二状态存储模块230耦接；时间信息存储模块250的第一输入端与时间信号线耦接，其第二输入端与第一状态存储模块220耦接，其第三输入端与第二状态存储模块230耦接。
根据本发明的另一些实施例，像素采集电路200还包括：光强变化放大器260和双阈值过滤器270，依次布置在光强检测器210和第一状态存储模块220之间。具体地，光强变化放大器260的输入端与光强检测器210的输出端耦接，双阈值过滤器270的输出端与光强变化放大器260的输出端耦接。这样，第一状态存储模块220的第一输入端就耦接到了双阈值过滤器270。如图2所示。
以下对像素采集电路200中的上述组成部分进行进一步阐述。
光强检测器210实时输出表征照射在其上的光信号的强度的第一电信号，也就是说，光强检测器210将检测到的光电流转化为第一电信号，该第一电信号会根据检测到的光强变化实时发生相应变化。光强检测器210可以实现为有源对数式光电探测器，它将光电流转换为一个与其呈对数关系的连续时间电压信号并可通过负反馈提高光电探测器的带宽。根据本发明的另一些实施例，光强检测器210也可以实现为无源对数光电探测器、或采用多层晶体管叠加的方法使光电探测器获得更大的电压电流转化增益。如图3A至图3C分别示出了根据本发明实施方式的一些光强检测器210的示意图。
如图3A所示，光电检测器210包括阳极接地的光电二极管(PD 1)和第 一晶体管(T 1)，第一晶体管(T 1)的源极与光电二极管(PD 1)阴极连接，其漏极与栅极连接到电源(VDD)。在一个应用场景中，光电二极管PD 1接收到光照信号后产生电流I。在此基础上，T 1的源极和栅极之间产生的电压变化与lnI线性相关。换言之，本实施例中光电检测器输出的第一电信号与入射光信号强度成对数关系。
在图3B所示的实施例中，光电检测器210包括阳极接地的光电二极管PD 1、第一晶体管T 1和第二晶体管T 2。第一晶体管T 1的源极与电源VDD连接，其栅极与漏极连接到第二晶体管T 2的漏极。第二晶体管T 2的源极与光电二极管PD 1阴极连接。
在图3C所示的实施例中，光电检测器210包括阳极接地的光电二极管PD 1、串联的N个晶体管(其中，N≥2)和第一放大器A 1。其中，第1个晶体管的源极与光电二极管PD 1阴极连接，第N个晶体管的源极连接到电源VDD，第2个至第N个晶体管中每个晶体管的漏极连接到前1个晶体管的源极，第2个至第N个晶体管中每个的栅极与漏极连接。第一放大器A 1连接在光电二极管PD 1的阴极与第1个晶体管的栅极之间。利用第一放大器A 1增加像素采集电路检测光强变化的速度。图3C中仅示出了N＝2时光电检测器210的结构，本领域技术人员据此容易想到其他光电检测器210(N＞2)的结构，此处不再赘述。
除了上述多个光电检测器的实施例之外，本发明还可以采用多种公知的高实时性的光电检测器，这里不再赘述。需要说明的是，传统的光电检测技术通常需要进行电容充电，然后进行持续曝光(电容持续放电)，进而根据电容的剩余电量来确定累积的光照强度。根据本发明的光电检测器210在生成代表光信号强度的第一电信号时，并不需要额外的曝光时间。因此，光电检测器210可以无延迟地输出第一电信号。
光强变化放大器260对第一电信号进行预处理，生成第二电信号。在根据本发明的一个实施例中，预处理包括隔离直流成分和放大交流成分的处理，以放大第一电信号。通过光强变化放大器260的预处理以增加像素采集电路200对光强检测的灵敏度。
根据本发明的一些实施例，光强变化放大器260采用开关电容放大电路， 以隔离前端光电检测器210输出电压的直流成分并通过设置两个电容的比值为交流成分提供增益。根据本发明的另一些实施例，光强变化放大器260采用电阻反馈式放大器或相关双采样电路实现。如图4A至图4C示出了根据本发明一些实施方式的光强变化放大器260的示意图。
在图4A所示的实施例中，光强变化放大器260包括第二放大器A 2、第一电阻R 1和第二电阻R 2。第二放大器A 2的输入正极连接光电探测器210的输出端，其输入负极连接有下拉的第一电阻R 1，其输出端与输入负极之间连接有第二电阻R 2。
在图4B所示的实施例中，光强变化放大器260通过相关双采样电路实现。包括：第三晶体管T 3，其漏极连接光强检测器210的输出端；第四晶体管T 4，其漏极连接光强检测器210的输出端；第一电容C 1，其第一端与第三晶体管T 3的源极相连，其第二端接地；第二电容C 2，其第一端与所述第四晶体管T 4的源极相连，其第二端接地；第五晶体管(T 5)，其漏极与第一电容C 1的第一端相连，其栅极与第六晶体管T 6的栅极相连；第六晶体管T 6，其漏极与第二电容C 2的第一端相连；第三放大器A 3，其输入正极连接第五晶体管T 5的源极，其输入负极连接第六晶体管T 6的源极。如图4B所示，在初始时刻，关闭光强变化放大器260上的晶体管；开始工作时，在t1时刻，打开T 3，将要采样的电压采样到电容C 1上，在采样时间过后关闭T 1；在t2时刻(t2和t1之间的时间差要大于采样时间)，打开T 4，将要采样的电压采样到电容C 2上，在采样时间过后关闭T 4；在t3时刻(t3和t2之间的时间差要大于采样时间)，打开T 5，第三放大器A 3放大正负两个输入极的电压差并输出电压。
在图4C示出的实施例中，光强变化放大器260包括：第四放大器A 4、第三电容C 3、第四电容C 4和第一开关K 1。其中，第三电容C 3的第一端与光电探测器210的输出端连接；第四放大器A 4的输入负极连接到固定电位，其输入正极与第三电容C 3的第二端连接；第四电容C 4和第一开关K 1并联在第四放大器A 4的输入正极和输出端之间。当接收到来自第一状态存储模块220的重置信号时，第一开关K 1闭合。
需要说明的是，除了上述多个光强变化放大器260的实施例之外，本发明还可以采用其他公知的光强变化放大器，任何本发明领域技术人员已知或据此容易想到的光强变化放大器的实施方式，均在本发明的保护范围内，此 处不予赘述。
双阈值过滤器270判断经光强变化放大器260处理过的第一电信号(即，第二电信号)的变化是否满足预定条件。根据本发明的实施方式，双阈值过滤器270可通过时间连续比较器实现，通过设置正向和负向双向阈值，来检测光强增强或减弱。
取决于期望的配置，双阈值过滤器270可以通过布置两个电压比较器来判断第二电信号是否低于负向阈值、或是否高于正向阈值，当第二电信号低于负向阈值、或高于正向阈值时，判断第二电信号的变化满足预定条件。此处不再赘述。
根据本发明的实施方式，每个像素单元存在三种状态：主动激活状态、被动激活状态和未激活状态，主动激活状态和被动激活状态统称为激活状态。其中，第一状态存储模块220中存储像素单元的主动激活状态和未激活状态；第二状态存储模块230中存储像素单元的被动激活状态和未激活状态。
当经双阈值过滤器270判断处理后的第一电信号(即，第二电信号)的变化满足预定条件时，像素单元被触发进入主动激活状态，此时，第一状态存储模块220进入主动激活状态并存储该主动激活状态。根据本发明的一个实施例，像素采集电路与周边电路之间的通信通过第一状态存储模块220进行。第一状态存储模块220在主动激活状态下发送行请求信号至行请求线。如前文所述，光流传感器中的像素行信号通信单元120在接收到行请求信号后，从所接收到的多行像素电路的行请求随机选取一行进行响应。根据本发明的一个实施例，第一状态存储模块220的第二输入端与行响应线耦接，其第三输入端与列响应线耦接。在激活状态(主动激活状态或被动激活状态)下，第一状态存储模块220接收到像素行信号通信单元120返回的行响应信号时，发送列请求信号至列请求线，同时通知光强信号采集及存储模块240输出第一电信号作为光强信号、通知时间信息模块260输出对应的时间信号。
根据本发明的又一实施方式，第一状态存储模块220在激活状态下向该像素采集电路的至少一个邻近像素采集电路发送脉冲信号，使其周围处于未激活状态的像素采集电路进入被动激活状态。在根据本发明的一个实施例中，第一状态存储模块220在激活状态下向该像素单元上、下、左、右四个邻近 的像素单元发送脉冲信号，使其上、下、左、右四个邻近的像素单元处于被动激活状态。
根据本发明的再一实施方式，第一状态存储模块220还会在同时接收到分别来自行响应线和列响应线的行响应信号和列响应信号时解除激活状态，即进入未激活状态。如图2所示，第一状态存储模块220的第三输出端与光强变化放大器260耦接，在该像素采集电路进入激活状态或解除激活状态时，发送重置信号至光强变化放大器260。取决于期望的配置，第一状态存储模块220包括第一锁存器，该第一锁存器用来存储激活状态和未激活状态。在第二电信号满足预定条件时该第一锁存器被置位，即像素单元进入激活状态；在同时接收到行响应信号和列响应信号时该第一锁存器被复位，即像素单元进入未激活状态；每当第一锁存器被置位或被复位时，第一状态存储模块发送重置信号至光强变化放大器260。
当接收到来自至少一个邻近像素采集电路的脉冲信号时，像素单元进入被动激活状态，此时，第二状态存储模块230进入被动激活状态并存储该被动激活状态。像素单元之间通过第二状态存储模块230进行通信。根据本发明的一个实施例，每个像素单元与其周边上、下、左、右四个像素单元进行通信，当接收到来自其周边上、下、左、右四个像素单元中至少一个像素单元的脉冲信号时，本像素单元进入被动激活状态。在被动激活状态下，像素单元不会向其它像素单元发送脉冲信号。并且，处于被动激活状态的像素单元可继续感受光强变化，在未收到行响应前亦可被激发进入主动激活状态。
第二状态存储模块230在被动激活状态下发送通知给第一状态存储模块220，以便第一状态存储模块在激活状态下发送行请求信号至行请求线。如前文所述，光流传感器中的像素行信号通信单元120在接收到行请求信号后，从所接收到的多行像素电路的行请求随机选取一行进行响应。
根据本发明的一个实施例，第二状态存储模块230的第二输入端与行响应线耦接，其第三输入端与列响应线耦接(图2中未示出)。在激活状态下，第二状态存储模块230接收到像素行信号通信单元120返回的行响应信号时，再通过第一状态存储模块220发送列请求信号至列请求线，同时通知光强信号采集及存储模块240输出第一电信号作为光强信号、通知时间信息模块260 输出对应的时间信号。
需要说明的是，第二状态存储模块230也可以直接与第一状态存储模块220耦接，在激活状态下，通过第一状态存储模块220接收分别来自行响应线和列响应线的行响应信号和列响应信号。也就是说，像素单元内部的响应信号既可以通过其它各模块直接连接行响应线和/或列响应线来获得，也可以经由第一状态存储模块220缓存后统一分配给各模块(如第二状态存储模块230、光强信号采集及存储模块240、时间信息存储模块250)，本发明的实施例对此均不作限制。
根据本发明的再一实施例，在第二状态存储模块230同时接收到分别来自行响应线和列响应线的行响应信号和列响应信号时，像素单元解除被动激活状态。且在该像素单元解除被动激活状态时，第二状态存储模块230通过第一状态存储模块220发送重置信号至光强变化放大器260。取决于期望的配置，第二状态存储模块230包括第二锁存器，该第二锁存器用来存储被动激活状态和未激活状态。在接收到来自至少一个邻近像素采集电路的脉冲信号时，第二锁存器被置位，像素单元进入被动激活状态；在同时接收到行响应信号和列响应信号时，第二锁存器被复位，像素单元进入未激活状态；当第二锁存器被复位时，第二状态存储模块230发送重置信号至光强变化放大器260。
光强信号采集及存储模块240根据该像素采集电路的状态存储并输出第一电信号作为光强信号。其中，在像素采集电路处于未激活状态时，光强信号采集及存储模块240实时采样第一电信号；自像素采集电路进入激活状态(主动激活状态或被动激活状态)起，光强信号采集及存储模块240存储所采样的第一电信号，直到接收到经由第一状态存储模块220或第二状态存储模块230传送的行响应信号为止，并输出在此期间存储的第一电信号作为光强信号。
时间信息存储模块250根据像素采集电路的状态存储并输出对应的时间信号。其中，在像素采集电路处于未激活状态时，实时采样来自时间信号线的第一时间信号；自像素采集电路进入激活状态(主动激活状态或被动激活状态)起，时间信息存储模块250存储所采样的第一时间信号，直到接收到 经由第一状态存储模块220或第二状态存储模块230传送的行响应信号为止，并输出在此期间存储的第一时间信号作为时间信号。
综上，根据本发明的方案，光流传感器100中的像素采集电路阵列中的像素单元实时检测视域中的光强变化，并在感知的光强变化满足预定条件时触发像素单元进入主动激活状态。被激活的像素单元同时向其周边的四个或更多像素单元发出脉冲信号，将处于未激活状态的周边像素单元激活进入被动激活状态。在像素单元被激活的时刻，该像素单元及其周边被动激活的像素单元的光强信息和时间信息被采样存储并输出给后续图像采集系统。
基于该光流传感器，可采集视域中目标运动物体在某一时刻的对应像素单元光强及所需周边像素单元光强和同一像素单元在不同时刻光强值，从而获得光流算法中光流约束方程参数，即像素单元的时域、空域梯度值。这样，通过硬件实现了提取算法参数，减少后端数据处理中的并行运算。可有效提高对高速运动物体的识别处理速度，从而高效分析运动物体的运动速度及方向，解决了防撞系统、无人机、无人驾驶地面车辆等对视域中高速运动物体分析延迟问题，提高系统判断的效率和准确性。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本发明的实施例可以在没有这些具体细节的情况下被实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
类似地，应当理解，为了精简本公开并帮助理解各个发明方面中的一个或多个，在上面对本发明的示例性实施例的描述中，本发明的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该公开的方法解释成反映如下意图：即所要求保护的本发明要求比在每个权利要求中所明确记载的特征更多特征。更确切地说，如下面的权利要求书所反映的那样，发明方面在于少于前面公开的单个实施例的所有特征。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利要求本身都作为本发明的单独实施例。
本领域那些技术人员应当理解在本文所公开的示例中的设备的模块或单元或组件可以布置在如该实施例中所描述的设备中，或者可替换地可以定位在与该示例中的设备不同的一个或多个设备中。前述示例中的模块可以组合 为一个模块或者此外可以分成多个子模块。
本领域那些技术人员可以理解，可以对实施例中的设备中的模块进行自适应性地改变并且把它们设置在与该实施例不同的一个或多个设备中。可以把实施例中的模块或单元或组件组合成一个模块或单元或组件，以及此外可以把它们分成多个子模块或子单元或子组件。除了这样的特征和/或过程或者单元中的至少一些是相互排斥之外，可以采用任何组合对本说明书(包括伴随的权利要求、摘要和附图)中公开的所有特征以及如此公开的任何方法或者设备的所有过程或单元进行组合。除非另外明确陈述，本说明书(包括伴随的权利要求、摘要和附图)中公开的每个特征可以由提供相同、等同或相似目的的替代特征来代替。
本发明一并公开了：
A8、如A7所述的像素采集电路，其中，第二状态存储模块包括：第二锁存器，适于在接收到来自至少一个邻近像素采集电路的脉冲信号时被置位，且在同时接收到行响应信号和列响应信号时被复位；以及所述第二状态存储模块还适于在所述第二锁存器被复位时，发送重置信号至光强变化放大器。
A9、如A2-8中任一项所述的像素采集电路，其中，预处理包括隔离直流成分和放大交流成分的处理。
A10、如A1-9中任一项所述的像素采集电路，其中，光电检测器包括：阳极接地的光电二极管(PD 1)；第一晶体管(T 1)，其源极与光电二极管(PD 1)阴极连接，其漏极与栅极连接到电源(VDD)。
A11、如A1-9中任一项所述的像素采集电路，其中，光电检测器包括：阳极接地的光电二极管(PD 1)；第一晶体管(T 1)，其源极与电源(VDD)连接，其栅极与漏极连接到第二晶体管(T 2)的漏极；第二晶体管(T 2)，其源极与光电二极管(PD 1)阴极连接。
A12、如A1-9中任一项所述的像素采集电路，其中，光电检测器包括：阳极接地的光电二极管(PD 1)；串联的N个晶体管，其中，N≥2，第1个晶体管的源极与光电二极管(PD 1)阴极连接，第N个晶体管的源极连接到电源(VDD)，第2个至第N个晶体管中每个晶体管的漏极连接到前1个晶体 管的源极，第2个至第N个晶体管中每个的栅极与漏极连接；第一放大器(A 1)，连接在光电二极管(PD 1)的阴极与第1个晶体管的栅极之间。
A13、如A2-12中任一项所述的像素采集电路，其中，光强变化放大器包括：第二放大器(A 2)，其输入正极连接所述光电探测器的输出端，其输入负极连接有下拉的第一电阻(R 1)，其输出端与输入负极之间连接有第二电阻(R 2)，适于对所述光电探测器输出的第一电信号进行预处理。
A14、如A2-12中任一项所述的像素采集电路，其中，光强变化放大器包括：第三晶体管(T 3)，其漏极连接所述光强检测器的输出端；第四晶体管(T 4)，其漏极连接光强检测器的输出端；第一电容(C 1)，其第一端与第三晶体管(T 3)的源极相连，其第二端接地；第二电容(C 2)，其第一端与第四晶体管(T 4)的源极相连，其第二端接地；第五晶体管(T 5)，其漏极与第一电容(C 1)的第一端相连，其栅极与第六晶体管(T 6)的栅极相连；第六晶体管(T 6)，其漏极与第二电容(C 2)的第一端相连；以及第三放大器(A 3)，其输入正极连接第五晶体管(T 5)的源极，其输入负极连接第六晶体管(T 6)的源极。
此外，本领域的技术人员能够理解，尽管在此所述的一些实施例包括其它实施例中所包括的某些特征而不是其它特征，但是不同实施例的特征的组合意味着处于本发明的范围之内并且形成不同的实施例。例如，在下面的权利要求书中，所要求保护的实施例的任意之一都可以以任意的组合方式来使用。
此外，所述实施例中的一些在此被描述成可以由计算机系统的处理器或者由执行所述功能的其它装置实施的方法或方法元素的组合。因此，具有用于实施所述方法或方法元素的必要指令的处理器形成用于实施该方法或方法元素的装置。此外，装置实施例的在此所述的元素是如下装置的例子：该装置用于实施由为了实施该发明的目的的元素所执行的功能。
如在此所使用的那样，除非另行规定，使用序数词“第一”、“第二”、“第三”等等来描述普通对象仅仅表示涉及类似对象的不同实例，并且并不意图暗示这样被描述的对象必须具有时间上、空间上、排序方面或者以任意其它方式的给定顺序。
尽管根据有限数量的实施例描述了本发明，但是受益于上面的描述，本技术领域内的技术人员明白，在由此描述的本发明的范围内，可以设想其它实施例。此外，应当注意，本说明书中使用的语言主要是为了可读性和教导的目的而选择的，而不是为了解释或者限定本发明的主题而选择的。因此，在不偏离所附权利要求书的范围和精神的情况下，对于本技术领域的普通技术人员来说许多修改和变更都是显而易见的。对于本发明的范围，对本发明所做的公开是说明性的，而非限制性的，本发明的范围由所附权利要求书限定。

Claims (10)

  1. 一种像素采集电路，包括：
    光强检测器，适于实时输出表征照射在其上的光信号的强度的第一电信号；
    第一状态存储模块，其第一输入端耦接到光强检测器，其第一输出端与行请求线耦接，其第二输出端与列请求线耦接，适于在第一电信号的变化满足预定条件时进入激活状态并存储该激活状态，并在激活状态下分别发送行请求信号和/或列请求信号至行请求线和列请求线，还适于在激活状态下向该像素采集电路的至少一个邻近像素采集电路发送脉冲信号；
    第二状态存储模块，其第一输入端与至少一个其邻近像素采集电路耦接，其输出端与所述第一状态存储模块耦接，适于在接收到来自至少一个邻近像素采集电路的脉冲信号时，进入被动激活状态并存储该被动激活状态，并在被动激活状态下发送通知给所述第一状态存储模块，以便所述第一状态存储模块分别发送行请求信号和/或列请求信号至行请求线和列请求线；
    光强信号采集及存储模块，其第一输入端与所述光强检测器的输出端耦接，其第二输入端与所述第一状态存储模块耦接，其第三输入端与所述第二状态存储模块耦接，适于根据该像素采集电路的状态存储并输出第一电信号作为光强信号；以及
    时间信息存储模块，其第一输入端与时间信号线耦接，其第二输入端与所述第一状态存储模块耦接，其第三输入端与所述第二状态存储模块耦接，适于根据该像素采集电路的状态存储并输出对应的时间信号。
  2. 如权利要求1所述的像素采集电路，还包括：
    光强变化放大器，其输入端与所述光强检测器的输出端耦接，适于对所述第一电信号进行预处理，生成第二电信号；
    双阈值过滤器，其输出端与所述光强变化放大器的输出端耦接，适于判断第二电信号的变化是否满足预定条件；以及
    所述第一状态存储模块耦接到双阈值过滤器，适于在第二电信号的变化 满足预定条件时进入激活状态。
  3. 如权利要求1或2所述的像素采集电路，其中，所述光强信号采集及存储模块还适于：
    在该像素采集电路处于未激活状态时，实时采样所述第一电信号；以及
    自该像素采集电路进入激活状态起，存储所采样的第一电信号，直到接收到经由第一状态存储模块或第二状态存储模块传送的行响应信号为止，并输出在此期间存储的第一电信号作为光强信号。
  4. 如权利要求1-3中任一项所述的像素采集电路，其中，所述时间信息存储模块还适于：
    在该像素采集电路处于未激活状态时，实时采样来自时间信号线的第一时间信号；以及
    自该像素采集电路进入激活状态起，存储所采样的第一时间信号，直到接收到经由第一状态存储模块或第二状态存储模块传送的行响应信号为止，并输出在此期间存储的第一时间信号作为时间信号。
  5. 如权利要求2-4中任一项所述的像素采集电路，其中，
    所述第一状态存储模块的第二输入端与行响应线耦接，其第三输入端与列响应线耦接，还适于在同时接收到分别来自行响应线和列响应线的行响应信号和列响应信号时解除激活状态；以及
    所述第一状态存储模块的第三输出端与所述光强变化放大器耦接，还适于在该像素采集电路进入激活状态或解除激活状态时，发送重置信号至光强变化放大器。
  6. 如权利要求5所述的像素采集电路，其中，所述第一状态存储模块包括：
    第一锁存器，适于在第二电信号满足预定条件时被置位，且在同时接收到行响应信号和列响应信号时被复位；以及
    所述第一状态存储模块还适于在所述第一锁存器被置位或被复位时，发送重置信号至光强变化放大器。
  7. 如权利要求2-6中任一项所述的像素采集电路，其中，
    所述第二状态存储模块的第二输入端与行响应线耦接，其第三输入端与列响应线耦接，还适于在同时接收到分别来自行响应线和列响应线的行响应信号和列响应信号时解除被动激活状态；以及
    所述第二状态存储模块还适于在该像素采集电路解除被动激活状态时，通过第一状态存储模块发送重置信号至光强变化放大器。
  8. 一种光流传感器，包括：
    像素采集电路阵列，包括多个如权利要求1-7中任一项所述的像素采集电路；
    像素行信号通信单元，适于对来自所述像素采集电路阵列的行请求信号进行响应，还适于输出得到行响应的行地址；
    像素列信号通信单元，适于对来自所述像素采集电路阵列的列请求信号进行响应，还适于输出得到列响应的列地址及对应的光强信号和时间信号；
    时间控制单元，适于通过时间信号线向所述像素采集电路阵列输出第一时间信号；
    中央调节与控制单元，适于控制行地址、列地址、时间信号和光强信号的输出。
  9. 如权利要求8所述的光流传感器，其中，所述像素行信号通信单元包括：
    行信号响应通信模块，适于接收来自所述像素采集电路阵列中至少一个像素采集电路的行请求信号，并输出行响应信号给其中一个行请求信号；以及
    行地址采集单元，适于编码输出得到行响应的行地址。
  10. 如权利要求8或9所述的光流传感器，其中，所述像素列信号通信单元包括：
    列信号响应通信模块，适于接收来自所述像素采集电路阵列中至少一个像素采集电路的列请求信号，并输出列响应信号给其中一个列请求信号；
    列地址采集模块，适于编码输出得到列响应的列地址；
    列输出选择控制模块，适于控制光强信号、时间信号和列地址的输出顺序。
PCT/CN2018/088260 2018-04-25 2018-05-24 像素采集电路及光流传感器 Ceased WO2019205217A1 (zh)

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