WO2020055499A2 - Lasers à cavité externe verticale, à cascade quantique, à base de réseau, dans le térahertz et l'infrarouge moyen - Google Patents

Lasers à cavité externe verticale, à cascade quantique, à base de réseau, dans le térahertz et l'infrarouge moyen Download PDF

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Publication number
WO2020055499A2
WO2020055499A2 PCT/US2019/039950 US2019039950W WO2020055499A2 WO 2020055499 A2 WO2020055499 A2 WO 2020055499A2 US 2019039950 W US2019039950 W US 2019039950W WO 2020055499 A2 WO2020055499 A2 WO 2020055499A2
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quantum
metasurface
cascade laser
metallic
grating
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WO2020055499A3 (fr
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Benjamin S. Williams
Christopher CURWEN
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University of California Berkeley
University of California San Diego UCSD
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University of California Berkeley
University of California San Diego UCSD
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Definitions

  • This disclosure generally relates to a vertical external cavity surface-emitting laser including a plasmonic grating.
  • Quantum-cascade-vertical external cavity surface-emitting lasers in the Terahertz range can be implemented based on arrays of metallic microcavity resonators with exhibit localized resonance; however, the metallic microcavity resonators impede such implementations from being scaled to shorter wavelengths in the mid-infrared (mid-IR) (e.g., wavelengths below about 15 pm).
  • mid-IR mid-infrared
  • a quantum-cascade laser includes a metasurface and an output coupler.
  • the metasurface includes (1) a substrate; (2) a first cladding layer disposed on the substrate; (3) a quantum-cascade laser active layer on the first cladding layer; (4) a second cladding layer disposed on the quantum-cascade laser active layer; and (5) a metallic grating disposed on the second cladding layer.
  • the output coupler is connected to the metasurface and forms a cavity with the metasurface.
  • a metasurface for quantum-cascade lasing includes: (1) a substrate; (2) a first cladding layer disposed on the substrate; (3) a quantum- cascade laser active layer on the first cladding layer; (4) a second cladding layer disposed on the quantum-cascade laser active layer; and (5) a metallic grating disposed on the second cladding layer, wherein a period of the metallic grating is in a range of 3 pm to 30 pm.
  • Fig. 1 Simulated overview of plasmonic grating structure
  • c Simulation of metasurface reflectance and phase with applied QCL gain coefficient.
  • Fig. 2. (a) Schematic of a grating-coupled gain chip, where a grating is formed over a larger area then that which receives an electrical bias (e.g., a current injection) (b) Schematic of an external laser cavity (c) Simulation of finite size bias areas, and the effect on the net reflectivity of an incident Gaussian beam.
  • an electrical bias e.g., a current injection
  • Fig. 3. Simulated reflectance (Comsol) from a grating structure designed for about 4.6 pm for various gain coefficients applied to an active layer
  • Fig. 4. Simulation parameter sweep of waveguide eigenmode frequencies versus grating tooth width (grating duty cycle) for a fixed cladding thickness of about 1.7 pm.
  • Fig. 5. (a) Simulation parameter sweep of modal confinement factor G versus grating tooth width. Symmetric mode is relatively insensitive, while antisymmetric modes exhibit changes in confinement through the anti-crossing
  • Embodiments of this disclosure are directed to a quantum-cascade (QC) vertical external cavity surface-emitting laser (VECSEL) in either the Terahertz spectral range (e.g., about 30 pm to about 300 pm) or mid-infrared (mid-IR) spectral range (e.g., about 3 pm to about 30 pm).
  • QC-VECSELs in the Terahertz range can be implemented based on arrays of metallic microcavity resonators with exhibit localized resonance; however, the metallic microcavity resonators impede such implementations from being scaled to shorter wavelengths in the mid-IR (e.g., wavelengths below about 15 pm).
  • a QC-VECSEL includes a dielectric-metallic grating structure that creates surface or substrate emission via a Bragg grating in a strongly-radiating, low-absorption mode.
  • the structure is based upon an etched Bragg grating coated with gold (Au) (or another metal or combination of metals) in an array of narrow ridge waveguides.
  • a metasurface for a QC laser includes a periodic grating etched into an upper cladding layer 102 of indium phosphide (InP) (or another semiconductor material) on top of a narrow ridge QCL waveguide.
  • the metasurface includes an InP substrate 104 (or a substrate of another semiconductor material), a lower cladding layer of InP 106 (or another semiconductor material) on the substrate 104, a QCL active layer 108 on the lower cladding layer 106, and the upper cladding layer 102 on the QCL active layer 108.
  • An array of trenches 110 is etched into the upper cladding layer 102, where the trenches are spaced with a period A corresponding to a period of the grating.
  • the QCL waveguide is then coated with Au (or another metal or combination of metals) to form a plasmonic metallic grating.
  • the grating includes an array of metallic strips 112 disposed in the trenches 110 and spaced with the period A of the grating, along with a metallic layer 114 extending over the top cladding layer 102 and interconnecting and integrally formed with the metallic strips 112.
  • the period of the grating is chosen to be about equal to a wavelength of a desired response within the semiconductor material (here, in a range encompassing about 8.2 pm), so that incident radiation at a surface normal is coupled into the QCL waveguide, and vice versa.
  • EM electromagnetic
  • the plasmonic grating is incorporated in the context of an external cavity and, in particular, a VECSEL.
  • the metasurface is then mounted top-down on a heat sink 202, so that incident light on the metasurface is coupled through the substrate side.
  • the grating is formed over a larger area then that which receives an electrical bias (e.g., a current injection) from an electrical source 212.
  • the electrical source 212 is connected to the metasurface to apply an electrical bias to a reference center region of the metasurface, but without applying an electrical bias to a remaining peripheral region of the metasurface outside of the center region.
  • the substrate 104 is a low-doped n-type InP substrate (e.g., about 10 16 cm 3 or smaller) to reduce free carrier losses within the substrate 104.
  • an undoped InP substrate may be used provided a contact layer for lateral current injection/extraction is included.
  • Mounting to the heat sink 202 or another carrier can occur via thermocompression metal-metal bonding to a metallized semiconductor carrier, or top-down die attach soldering with indium solder to a metallized heat sink.
  • This configuration provides several options to configure a VECSEL cavity.
  • a backside of the high resistivity substrate 104 can be coated with a high reflectivity (HR) coating (e.g., about 90% reflectance or greater) to form a chip-scale monolithic VECSEL source.
  • HR high reflectivity
  • the substrate 104 can be thinned, an anti- reflective (AR) coating 204 can be coated on the backside of the substrate 104, and an external output coupler 206 (e.g., a mirror or another flat reflector) can be used to define the external cavity, as shown in Fig. 2b.
  • the output coupler 206 is coated with an HR coating 208 on a side facing the metasurface, and is coated with an AR coating 210 on a side facing away from the metasurface.
  • VECSEL gallium-semiconductor
  • Modeling is performed using finite-element electromagnetic simulations (Comsol Multiphysics). Extensive parameter sweeps are conducted to establish optimized layer thicknesses, doping levels, and metallization geometry for gratings. Optimization takes place across several key“figures of merit.” For example, these figures of merit include minimizing the transparency gain gu, and maximizing the radiative loss a ra d of a symmetric radiative mode. Maximization of the radiative loss ensures that the symmetric mode does not self-lase, and minimizes a length of a grating interaction, which is proportional to arad '1 . Simultaneously, it is desired that the other two non-radiating anti-symmetric modes to have sufficiently large absorption loss to prevent self-lasing in these undesirable modes.
  • Simulation parameter sweeps are performed of waveguide eigenmode frequencies versus grating tooth width (grating duty cycle - corresponding to a width of etched trenches in a range of about 500 nm to about 1000 nm) for a fixed upper cladding layer thickness of about 1.7 pm (shown in Fig. 4).
  • Three branches are seen, and their evolution and mode profiles are illustrative.
  • the symmetric branch is the “desirable” symmetric radiative mode; it is relatively spatially separate from the grating and depends little on the grating period.
  • Two anti-symmetric non-radiative modes are formed from hybridizations of waveguide modes and surface plasmon modes. They exhibit an anti crossing behavior - which represents the design point in which both of these modes couple significantly with the grating and exhibit large absorption losses.
  • Simulation parameter sweep is performed of modal confinement factor G versus grating tooth width (in a range of about 500 nm to about 1000 nm) as shown in Fig. 5(a).
  • the symmetric mode is relatively insensitive, while the antisymmetric modes exhibit changes in confinement through an anti-crossing.
  • Shown in Fig. 5(b) is a quantity proportional to the modal loss divided by the confinement factor, which is proportional to the gain to bring each mode to threshold. It is desirable for these modes to have large losses so that they don’t self-lase. Tracking this quantity establishes the region for design/fabrication tolerance shown by the shaded box.
  • Example applications include for use as mid-IR QCLs with high output power and excellent near-diffraction beam patterns desired for remote sensing and IR countermeasures applications.
  • lasers in the about 3-5 pm range are desired with high quality beam output power of about tens of Watts (or greater) so that the lasers can be directed at incoming missiles to confuse or blind their IR sensors.
  • the achieving mid-IR grating-coupled VECSEL approach allows scaling of the output power to high levels while maintaining a high quality beam pattern.
  • the surface emission can allow beam combining of multiple laser beams to further boost the output power.
  • Mid-IR QCLs are also desired for gas sensing, since many molecules have vibrational spectral signatures (e.g., fingerprint) between about 2-30 pm.
  • the metasurface includes: (1) a substrate; (2) a first cladding layer disposed on the substrate; (3) a quantum-cascade laser active layer on the first cladding layer; (4) a second cladding layer disposed on the quantum-cascade laser active layer; and (5) a metallic grating disposed on the second cladding layer.
  • the metasurface is configured to reflect an incident light of a resonant wavelength with amplification.
  • the resonant wavelength is in a range of about 30 pm to about 300 pm.
  • the resonant wavelength is in a range of about 3 mih to about 30 mih.
  • a period of the metallic grating is substantially equal to the resonant wavelength.
  • the first cladding layer includes indium phosphide or another semiconductor material
  • the quantum-cascade laser active layer includes a GaAs/AlGaAs material system, InGaAs/InAlAs material system, or other combination of two or more semiconductor materials
  • the second cladding layer includes indium phosphide or another semiconductor material
  • the metallic grating includes gold, another metal, or an alloy or other combination of two or more metals.
  • the substrate is an indium phosphide substrate or another semiconductor substrate.
  • the metallic grating includes an array of metallic strips spaced with a period.
  • the second cladding layer defines an array of trenches spaced with the period, and the array of metallic strips are disposed in respective ones of the array of trenches.
  • the metallic grating further includes a metallic layer interconnecting the array of metallic strips.
  • a width of each trench of the array of trenches is in a range of about 100 nm to about 2 pm, about 100 nm to about 1000 nm, or about 500 nm to about 1000 nm.
  • a thickness of the second cladding layer is in a range of about 500 nm to about 10 pm, about 1 pm to about 5 pm, about 1 pm to about 3 pm, or about 1 pm to about 2 pm.
  • the quantum-cascade laser includes: (1) a metasurface according to any of the foregoing embodiments; and (2) an output coupler connected to the metasurface and which forms a cavity with the metasurface to generate a quantum-cascade laser beam.
  • the metasurface is oriented relative to the output coupler, such that the substrate of the metasurface is disposed between the output coupler and the metallic grating of the metasurface.
  • the output coupler is a flat or curved reflector, and the quantum-cascade laser beam is reflected between the flat or curved reflector and the metasurface before emitting.
  • the quantum-cascade laser further includes a heat sink connected to the metasurface.
  • the metasurface is oriented relative to the heat sink, such that the substrate of the metasurface is disposed farther away from the heat sink than is the metallic grating of the metasurface.
  • the quantum-cascade laser further includes an electrical source connected to the metasurface to apply an electrical bias to a reference center region of the metasurface, but without applying an electrical bias to a remaining peripheral region of the metasurface outside of the center region.
  • a set of objects can include a single object or multiple objects.
  • Objects of a set also can be referred to as members of the set.
  • Objects of a set can be the same or different.
  • objects of a set can share one or more common characteristics.
  • connection refers to an operational coupling or linking.
  • Connected objects can be directly coupled to one another or can be indirectly coupled to one another, such as via one or more other objects.
  • the terms“substantially” and“about” are used to describe and account for small variations.
  • the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation.
  • the terms can refer to a range of variation of less than or equal to ⁇ 10% of that numerical value, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%.
  • a first numerical value can be“substantially” or“about” the same as a second numerical value if the first numerical value is within a range of variation of less than or equal to ⁇ 10% of the second numerical value, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%.
  • a component provided or disposed “on” or“over” another component can encompass cases where the former component is directly on (e.g., in physical or direct contact with) the latter component, as well as cases where one or more intervening components are located between the former component and the latter component.
  • concentrations, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It is to be understood that such range format is used for convenience and brevity and should be understood flexibly to include numerical values explicitly specified as limits of a range, but also to include all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly specified. For example, a range of about 1 to about 200 should be understood to include the explicitly recited limits of about 1 and about 200, but also to include individual values such as about 2, about 3, and about 4, and sub-ranges such as about 10 to about 50, about 20 to about 100, and so forth.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser à cascade quantique comprenant une métasurface et un coupleur de sortie. La métasurface comprend : (1) un substrat ; (2) une première couche de métallisation disposée sur le substrat ; (3) une couche active du laser à cascade quantique sur la première couche de métallisation (4) une seconde couche de métallisation disposée sur la couche à activité laser à cascade quantique ; et (5) un réseau métallique disposé sur la seconde couche de métallisation. Le coupleur de sortie est relié à la métasurface et forme une cavité avec la métasurface.
PCT/US2019/039950 2018-06-29 2019-06-28 Lasers à cavité externe verticale, à cascade quantique, à base de réseau, dans le térahertz et l'infrarouge moyen Ceased WO2020055499A2 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220360045A1 (en) * 2021-05-10 2022-11-10 Lehigh University Technologies for a phase-locked terahertz plasmonic laser array with microcavities

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Publication number Priority date Publication date Assignee Title
US6400744B1 (en) * 2000-02-25 2002-06-04 Lucent Technologies, Inc. Apparatus comprising a quantum cascade laser having improved distributed feedback for single-mode operation
US6963597B2 (en) * 2000-04-28 2005-11-08 Photodigm, Inc. Grating-outcoupled surface-emitting lasers
US7010012B2 (en) * 2001-07-26 2006-03-07 Applied Optoelectronics, Inc. Method and apparatus for reducing specular reflections in semiconductor lasers
US20100309942A1 (en) * 2009-06-05 2010-12-09 Mikhail Belkin Quantum Cascade Lasers (QCLs) Configured to Emit Light Having a Wavelength in the 2.5 - 3.8 Micrometer Band
US9093821B2 (en) * 2013-12-11 2015-07-28 Wisconsin Alumni Research Foundation Substrate-emitting transverse magnetic polarized laser employing a metal/semiconductor distributed feedback grating for symmetric-mode operation
WO2018067837A1 (fr) * 2016-10-06 2018-04-12 The Regents Of The University Of California Focalisation non homogène et lasers à cascade quantique à métasurfaces à bande large

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220360045A1 (en) * 2021-05-10 2022-11-10 Lehigh University Technologies for a phase-locked terahertz plasmonic laser array with microcavities

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