WO2020073954A1 - 阵列基板、显示面板及显示装置 - Google Patents

阵列基板、显示面板及显示装置 Download PDF

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Publication number
WO2020073954A1
WO2020073954A1 PCT/CN2019/110371 CN2019110371W WO2020073954A1 WO 2020073954 A1 WO2020073954 A1 WO 2020073954A1 CN 2019110371 W CN2019110371 W CN 2019110371W WO 2020073954 A1 WO2020073954 A1 WO 2020073954A1
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WIPO (PCT)
Prior art keywords
traces
light
adjacent
array substrate
sensing component
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PCT/CN2019/110371
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English (en)
French (fr)
Inventor
谢明哲
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=70164463&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2020073954(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to JP2020567224A priority Critical patent/JP7399111B2/ja
Priority to EP19872172.2A priority patent/EP3866144B1/en
Priority to US16/760,236 priority patent/US11695017B2/en
Priority to EP24167476.1A priority patent/EP4372729A3/en
Publication of WO2020073954A1 publication Critical patent/WO2020073954A1/zh
Anticipated expiration legal-status Critical
Priority to US17/990,021 priority patent/US11935901B2/en
Priority to US18/516,564 priority patent/US12125853B2/en
Priority to JP2023205050A priority patent/JP7642049B2/ja
Priority to JP2025027973A priority patent/JP2025084827A/ja
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to an array substrate, a display panel, and a display device.
  • the screen ratio of the display screen refers to the ratio of the area of the display area of the display surface of the display screen to the total area of the display surface of the display screen.
  • the pursuit of a large screen ratio is one of the development trends in the field of display technology.
  • the full screen refers to a screen whose area of the display area of the display surface of the display screen is equal to or approximately equal to the total area of the display surface of the display screen, and its screen occupancy is relatively high.
  • an array substrate having a non-inductive component area and a transparent inductive component area.
  • the array substrate includes: a plurality of first traces extending in a first direction, and the traces passing through the sensing component area among the plurality of first traces are selected first traces, and a plurality of the selected traces.
  • the first traces are divided into at least one group, each group includes at least two adjacent selected first traces, and each selected first trace of each group is gathered in the sensing component area to form a first gather
  • At least one first light-shielding strip disposed on the side of the plurality of first traces away from or close to the display surface of the array substrate, each orthographic projection of the first light-shielding strip on the display surface Covering an orthographic projection of the first gathering part on the display surface.
  • the distance between two adjacent first gathers is greater than the distance between two adjacent first traces in the non-sensing component area. In each of the first gathering portions, the distance between two adjacent selected first traces is smaller than the distance between two adjacent first traces in the non-sensing component area.
  • the number of the selected first traces included in the selected first traces of each group is the same.
  • the distance between every two adjacent first gathers is equal. In each of the first gathers, the distance between each adjacent two selected first traces is equal.
  • the ratio of the width of one first light-shielding strip to the spacing between two adjacent first light-shielding strips is greater than 0 and less than or equal to 0.5.
  • the sum of the width of one first light-shielding strip and the spacing between two adjacent first light-shielding strips is greater than or equal to 94.5 ⁇ m and less than or equal to 200 ⁇ m.
  • the first trace includes one or more first sub-traces.
  • the array substrate further includes: a plurality of second traces extending along the second direction, the first direction and the second direction intersect, wherein the plurality of second traces pass through
  • the traces in the sensing component area are selected second traces, and the plurality of selected second traces are divided into at least one group, and each group includes at least two adjacent selected second traces, each group
  • the selected second traces in the sensing component area show a tendency to gather to form a second gather; at least one second light-shielding strip is provided on the display of the plurality of second traces away from or near the array substrate
  • an orthographic projection of each second light-shielding strip on the display surface covers an orthographic projection of the second gathering portion on the display surface.
  • the spacing between two adjacent second gathers is greater than the spacing between two adjacent second traces in the non-sensing component area. In each of the second gathering parts, the distance between two adjacent selected second traces is smaller than the distance between two adjacent second traces in the non-sensing part area.
  • the number of selected second traces included in the selected second traces of each group is the same.
  • the distance between every two adjacent second gathers is equal. In each of the second gathering parts, the distance between each adjacent two selected second traces is equal.
  • the ratio of the width of one second light-shielding strip to the spacing between two adjacent second light-shielding strips is greater than 0 and less than or equal to 0.5.
  • the sum of the width of one second light-shielding strip and the spacing between two adjacent second light-shielding strips is greater than or equal to 94.5 ⁇ m and less than or equal to 200 ⁇ m.
  • the first shading strip and the second shading strip are in the same film layer and have the same material.
  • the second trace includes one or more second sub-traces.
  • a display panel comprising: the array substrate as described in any of the above embodiments.
  • a display device including: the display panel as described in some embodiments above; at least one sensing component disposed on the non-display surface side of the display panel, the at least one sensing component being on the array substrate.
  • the orthographic projection above is in the sensing component area of the array substrate, and the sensing surface of each of the sensing components faces the display surface side of the array substrate.
  • FIG. 1A is a schematic diagram of a front view structure of a display device according to the related art
  • Fig. 1B is a schematic diagram of a cross-sectional structure along the cross-sectional line SS 'in Fig. 1A;
  • FIG. 2A is a schematic diagram of another front view structure of a display device according to the related art.
  • FIG. 2B is a schematic diagram of a cross-sectional structure along the cross-sectional line TT 'in FIG. 2A;
  • 3A is a schematic diagram of a front view structure of a display device according to some embodiments of the present disclosure.
  • FIG. 3B is a schematic diagram of a cross-sectional structure along the cross-sectional line MM 'in FIG. 3A;
  • 4A is a schematic diagram of the area division of a display panel according to some embodiments of the present disclosure.
  • FIG. 4B is an enlarged schematic view of the area E in FIG. 4A;
  • 5A is a schematic structural diagram of an array substrate according to some embodiments of the present disclosure.
  • 5B is another schematic structural diagram of an array substrate according to some embodiments of the present disclosure.
  • FIG. 6A is an enlarged schematic view of the sensing component area C1 in FIG. 5B;
  • FIG. 6B is a schematic diagram of a cross-sectional structure along the cross-sectional line PP 'in FIG. 6A;
  • FIG. 6C is a schematic diagram of another cross-sectional structure along the cross-sectional line PP 'in FIG. 6A;
  • FIG. 7 is another schematic structural diagram of an array substrate according to some embodiments of the present disclosure.
  • FIG. 8A is another schematic structural diagram of an array substrate according to some embodiments of the present disclosure.
  • 8B is another schematic structural diagram of an array substrate according to some embodiments of the present disclosure.
  • FIG. 9A is an enlarged schematic view of the sensing component area C1 of FIG. 8B;
  • FIG. 9B is a schematic diagram of a cross-sectional structure along the cross-sectional line OO 'in FIG. 9A;
  • FIG. 9C is a schematic diagram of another cross-sectional structure along the cross-sectional line OO 'in FIG. 9A.
  • the display device involved in the embodiments of the present disclosure can be applied to any terminal having a display function such as a mobile phone, a flat panel display, a computer, a TV monitor, etc.
  • the display device can display whether it is motion (eg, video) or fixed (eg, still image) ), And regardless of text or pictures of any device.
  • the "display surface side” refers to the side of the display device or display panel that performs image display; the “non-display panel side” refers to the side of the display device or display panel that is opposite to the image display Side.
  • the display device includes a sensing component.
  • the display device includes a sensing component such as a front camera, a light sensor, a 3D sensing module, etc. These sensing components need to be sensed from the display.
  • the light on the display side of the device to achieve the corresponding function. For example, when the front camera in the mobile phone takes an image, it needs to collect the light of the object to be photographed on the front side of the mobile phone (that is, on the display surface side), so as to realize imaging.
  • the display panel 11 of the display device 100 has a display area A1 and a non-display area B1.
  • the sensing component 2 (Camera) is embedded in the punched hole, so that the sensing member 2 can sense the light from the display surface side of the display panel 11.
  • the display panel 12 of the display device 200 has a display area A2 and a transparent area B2, and the sensing component 2 is provided on the non-display surface side of the display panel 12 of the display device 200 And the sensing component 2 is directly opposite to the transparent area B2 of the display panel 12, that is, the orthographic projection of the sensing component 2 on the display surface of the display panel 12 is in the transparent area B2. In this way, light from the display surface side of the display panel 12 can pass through the transparent area B2 and be sensed by the sensing member 20.
  • the display device 300 includes a display panel 13 and a sensing component 2.
  • the display panel 13 has a sensing component area C1 and a non-sensing component area C2; wherein the non-sensing component area C2 includes a display area capable of image display; the non-sensing component area C2 may surround the sensing component area C1 or semi-enclose the sensing component area C1, for example ,
  • the sensing component area C1 is transparent and capable of image display.
  • the sensing component 2 is disposed on the non-display surface side of the display panel 13, and the sensing component 2 is directly opposite to the sensing component area C1 of the display panel 13, that is, the orthographic projection of the sensing component 2 on the display surface of the display panel 13 is in the sensing component area C1 Inside.
  • the sensing surface of the sensing member 2 faces the display surface side of the display panel 13. Since the sensing component area C1 is transparent, the sensing component 2 can sense the light from the display surface side of the display panel 13 through the sensing component area C1 to perform corresponding operations.
  • the sensing component 2 as a front camera as an example, the front camera acquires light from the object to be photographed on the display surface side of the display panel 13 through the sensing component area C1, thereby imaging, and capturing an image of the object to be photographed.
  • the display panel 13 is designed as follows: the display area of the display panel 13 (including the sensing component area C1 and the non-sensing component area C2) includes multiple pixels 10.
  • the plurality of pixels 10 may be arranged in an array, for example.
  • FIG. 4B is a schematic diagram of the structure after the area E is enlarged.
  • the area E includes a partial area of the non-sensing component area C2 and a sensing component area C1, wherein the "part of the non-sensing component area C2" is in the non-sensing component area C2, adjacent to the sensing component area C1 and located around the sensing component area C1 Area.
  • the structure of the area outside the area E of the non-inductive part area C2 can be referred to the structure of the partial area inside the area E of the non-inductive part area C2.
  • the method of reducing the PPI (Pixels Per Inch, pixel density) of the sensing component area C1 is to reduce the number of pixels 10 of the sensing component area C1 relative to the non-sensing component area C2, so that in the sensing component area C1, pixels The space occupied by the point 10 is reduced, which allows room for light to pass through, so that the sensing component area C1 has a higher light transmittance.
  • the display area of the display panel 13 (taking the area E as an example, the area E includes a partial area of the non-sensing component area C2 and the sensing component area C1), is provided with a plurality of first traces extending in the first direction 20 and a plurality of second traces 30 extending in the second direction, a plurality of first traces 20 are arranged at intervals, and a plurality of second traces 30 are arranged at intervals.
  • the first direction and the second direction intersect.
  • the first direction is a column direction in which a plurality of pixel dots 10 are arranged
  • the second direction is a row direction in which a plurality of pixel dots 10 are arranged.
  • the first trace When the first direction is the column direction and the second direction is the row direction, the first trace includes a data line (Data line), an initialization signal line, a first power line (Vdd line), and a second power line (Vss line ), Etc., the second wiring includes a gate line (Gate line), a control line, a common voltage signal line (Com line), etc. Since the PPI of the non-sensing component area C2 is high, the arrangement of the first traces 20 is dense, and the spacing between two adjacent first traces 20 is small.
  • the arrangement density of the first traces 20 in the sensing component area C1 is the same as the non-sensing component area C2. This is because, for each sub-pixel column where the plurality of pixel points 10 in the sensing component area C1 are located, the PPIs in the C22 area and the C24 area of the non-sensing component area C2 in these sub-pixel columns are different from those in the non-sensing component area
  • the PPIs of the C21 and C23 areas of C2 are consistent, so the arrangement density of the first and second traces 20 and 30 in the C22 and C24 areas of the non-inductive component area C2 and C21 of the non-inductive component area C2
  • the arrangement density of the first traces 20 and the second traces 30 in the area and the C23 area remains the same, so the wiring density of these sub-pixel columns in the sensing component area C1 cannot be reduced due to the decrease in PPI.
  • the light diffraction phenomenon refers to the phenomenon that when the light encounters an obstacle or a small hole during the propagation process, the light will deviate from the straight line propagation path and propagate behind the obstacle, and the more the distance between the obstacles The smaller, or the smaller the aperture, the more obvious the diffraction phenomenon.
  • the aperture is small enough to be comparable to the wavelength of light, the diffraction phenomenon of light is extremely serious. The more obvious the diffraction phenomenon occurs when the light propagates, the light will become The darker.
  • the sensing component 2 as a front camera
  • the front camera needs to obtain the to-be-photographed on the display surface side of the display panel 13 through the sensing component area C1
  • the light of the object, and because the first wiring 20 is too densely arranged, the light will be optically diffracted when passing through the sensing component area C1, resulting in inaccurate light information collected by the front camera, which in turn leads to the imaging effect of the front camera Decline, for example, the image brightness is low, the definition is poor, etc.
  • some embodiments of the present disclosure provide an array substrate 131 having a non-sensing component area C2 and a transparent sensing component area C1. Both the sensing component area C1 and the non-sensing component area C2 have a display function.
  • the non-sensing component area C2 may surround the sensing component area C1 or semi-enclose the sensing component area C1.
  • the array substrate 131 has a non-sensing component area C2 and a transparent sensing component area C1.
  • a display device including the sensing component 2 When the array substrate 131 is applied to a display device including the sensing component 2, light can pass through the transparent sensing component area C1 on the array substrate 131 Transmission between the display surface side and the sensing component 2 means that light from the display surface side can be sensed by the sensing component 2 through the sensing component area C1.
  • the above array substrate 131 includes: a plurality of first traces 20 extending in the first direction.
  • the plurality of first traces 20 are arranged at intervals, and among the plurality of first traces 20, the trace passing through the sensing component area C1 is the selected first trace 201; the plurality of selected first traces 201 Divided into at least one group, each selected first trace includes at least two adjacent selected first traces 201, and each selected first trace 201 of each selected first trace is in the sensing component
  • the area C1 is gathered to form a first gathering portion 50.
  • the first traces numbered L 1 to L 6 are selected first traces 201.
  • a plurality of selected first traces 201 can be divided into three groups, each group of selected first traces includes two adjacent selected first traces 201, and each group of selected first traces 201 includes two
  • the selected first traces 201 are gathered in the sensing component area C1 to form one first gathering portion 50, and three sets of selected first traces 201 are gathered in the sensing component area C1 to form three first gathering portions 50.
  • the selected first traces 201 numbered L 1 and L 2 serve as a group of selected first traces, and are gathered in the sensing component area C1 to form a first gathering portion 50; the number is L
  • the selected first traces 201 of 3 and L 4 serve as a group of selected first traces, and are gathered in the induction component area C1 to form a first gathering part 50;
  • the selected first traces numbered L 5 and L 6 201 is selected as a group of first traces, and gathered in the sensing component area C1 to form a first gathered portion 50.
  • the selected first trace 201 numbered L 2 includes a first portion extending in the first direction and extending in the second direction
  • the second part of the first part and the second part are staggered and connected end to end.
  • the selected first trace 201 with the number L 2 is selected from the selected part with the number L 1 in the sensing component area C1.
  • the first traces 201 close together to form a first gathering portion 50.
  • the first gathering part 50 includes a portion where the selected first trace 201 with the number L 1 is located in the sensing component area C1 and a portion where the selected first trace 201 with the number L 2 is located in the sensing component area C1.
  • the structure of the other two first gathering portions 50 is similar to the structure of the first gathering portion 50 described above, and will not be repeated here.
  • the array substrate 131 further includes at least one light-shielding bar 40.
  • the at least one first light-shielding strip 40 is disposed on a side of the plurality of first traces 20 away from or near the display surface of the array substrate 131, and each first light-shielding strip 40 is on the display surface of the array substrate 131 (ie, the array When the substrate 131 is applied to the display panel, the orthographic projection on the side configured to perform display covers the orthographic projection of the first gathering portion 50 on the display surface.
  • the embodiment of the present disclosure does not limit the position of the at least one first light-shielding strip 50 relative to the plurality of first traces 20, as long as each first light-shielding strip 40 can be positioned on the display surface of the array substrate 131
  • the orthographic projection only needs to cover the orthographic projection of the first gathering portion 50 on the display surface, so that one first light-shielding bar 40 can block at least two adjacent selected first traces 201 in the first gathering portion 50 The gap between them prevents the light from passing through the gap between the selected first traces 201 in the first gathering part 50 to cause diffraction.
  • FIG. 6B shows a case where the at least one first light shielding bar 40 is disposed on a side of the plurality of first traces 20 close to the display surface of the array substrate 131, wherein the at least one first The light-shielding strip 40 is disposed on a side of the plurality of selected first traces 201 away from the base substrate 80;
  • FIG. 6C shows that the at least one first light-shielding strip 40 is disposed on the plurality of first traces 20 The situation is far from the side of the display surface of the array substrate 131, wherein the at least one first light shielding bar 40 is disposed on a side of the plurality of selected first traces 201 close to the base substrate 80.
  • the at least one first light-shielding bar 40 is disposed on a side of the plurality of selected first traces 201 near the display surface of the array substrate 131, so that the first light-shielding bar
  • the preparation of the strip 40 can be compatible with the preparation process of the light-shielding pattern for shielding the active layer of the thin film transistor in the array substrate 131, and no additional step for preparing the first light-shielding strip 40 is required, which simplifies the preparation process of the array substrate 131 .
  • the at least one first light-shielding strip 40 is disposed on a side of the plurality of first traces 20 away from or near the display surface of the array substrate 131, and each first light-shielding strip 50 is on the display surface.
  • the orthographic projection covers an orthographic projection of the first gathering portion 50 on the display surface, which means that the number of the first shading bars 50 is the same as the number of the first gathering portions 50.
  • each selected first trace includes at least two adjacent selected first traces Line 201, and each selected first trace 201 of each group of selected first traces is gathered in the sensing component area C1 to form a first gathering part 50, which is equivalent to each of the selected first traces of each group
  • the selected first traces 201 are close to each other in the sensing component area C1, so that the adjacent two selected first traces 201 in each group of selected first traces are closer to the sensing component area C1
  • the distance between two adjacent first gathers 50 is farther away, and the distance between two adjacent first gathers 50 is more than the distance between two adjacent first traces 20 in the non-inductive component area C2 Big.
  • the gap between at least two adjacent selected first traces 201 in the first gathering portion 50 is blocked, blocking the transmission of light through these gaps and preventing light
  • An optical diffraction phenomenon occurs when a gap between at least two adjacent selected first traces 201 in the first gathering portion 50 is transmitted.
  • each group of the selected first traces selects the first
  • the arrangement density of the plurality of first gathering portions 50 (corresponding to the arrangement density of the plurality of first shielding bars 40) formed after the route 201 is gathered is relative to the arrangement when the plurality of first routes 20 are not gathered
  • the distribution density is reduced, so that when the light passes through the transparent sensing component area C1, the diffraction phenomenon is alleviated, and the influence of the light diffraction on the brightness of the light is reduced, thereby improving the accuracy of the light information sensed by the sensing component 2.
  • the sensing component 2 as a front camera, for example, when the light passes through the transparent sensing component area C1, the diffraction phenomenon is alleviated, so that the imaging effect of the front camera is improved, and the brightness and clarity of the resulting image are both Great improvement.
  • the distance a between two adjacent first gathering portions 50 is greater than the adjacent two in the non-sensing component area C2
  • the distance c between two adjacent selected first traces 201 is smaller than the distance b between two adjacent first traces in the non-sensing part area C2.
  • the distance a between the two adjacent first gathers 50 is greater than the distance b between the two adjacent first traces 20 in the non-sensing component area C2, where the two adjacent The distance a between the gathered portions 50 is the distance between the two closest first traces 20 in the two adjacent first gathered portions 50 respectively, so that the two adjacent first gathered portions 50
  • the interval a between the two adjacent first traces 20 in the non-sensing component area C2 becomes larger than the interval b, correspondingly, the interval between two adjacent first light-shielding strips 40 is The distance between two adjacent first traces 20 of the non-inductive component area C2 becomes larger, so that when light passes through the transparent inductive component area C1, the diffraction phenomenon can be reduced.
  • the distance c between two adjacent selected first traces 201 is smaller than the distance b between two adjacent first traces 20 in the non-sensing part area C2, In this way, in each first gathered part 50, two adjacent selected first traces 201 are close to each other, so that the dimension of the first gathered part 50 in the direction perpendicular to the extending direction of the first gathered part 50 (That is, the width of the first gathered portion 50) is small, which ensures that the distance between the two adjacent first gathered portions 50 can be large, so as to reduce the light diffraction phenomenon, and is used to block the first gathered portion 50
  • the width of the first light-shielding strip 40 of the gap between at least two adjacent selected first traces 201 is narrow, so that more light can pass through.
  • the number of selected first traces 201 included in the selected first traces of each group is not limited, and the selected first traces of each group may include two selected first traces 201.
  • FIG. 5A, FIG. 5B, and FIG. 6A to FIG. 6C illustrate this situation; each group of selected first traces may also include more than two selected first traces 201.
  • each group of selected The number of selected first traces 201 included in the first trace 201 is three, four, and five.
  • the number of selected first traces 201 included in each group of selected first traces is the same.
  • the number of the selected first traces 201 included in the selected first traces of each group is two, or the selected first traces 201 included in the selected first traces of each group
  • the number of articles is three or four or other quantities.
  • FIG. 5A shows a situation where each group of selected first traces includes two selected first traces 201, so that multiple sets of first gathers 50 corresponding to multiple groups of selected first traces can be made
  • the widths are all equal or approximately equal, and the width of the first light-shielding strip 40 is equal or approximately equal, so that the reduction in the diffraction of light in each area in the sensing component area C1 is equal or approximately equal, through each of the sensing component area C1
  • the light in the area is uniform, so that the accuracy of the light information sensed by the sensing component 2 is higher.
  • the distance between every two adjacent first gathers 50 is equal; in each first gather 50, the distance between every two adjacent first traces 201 is the same.
  • the distance between every two adjacent first gathers 50 is a.
  • each first gathering part 50 when each group of selected first traces includes three or more selected first traces 201, the distance between every two adjacent selected first traces 201 equal.
  • each adjacent two first gathering portion 50 since the interval between each adjacent two first gathering portions 50 is equal, the interval between each adjacent two first shading bars 40 is also equal or approximately equal; in each first gathering portion 50, The distance between each adjacent two selected first traces 201 is equal, so that the widths of the plurality of first gathering portions 50 are all equal, and the widths of the plurality of first light-shielding strips 40 are equal or approximately equal, which makes the induction
  • Each area in the component area C1 has the same or nearly equal reduction in the diffraction of light, and the light passing through each area of the sensing component area C1 is more uniform, so that the accuracy of the light information sensed by the sensing component 2 is higher.
  • the mitigation effect on the optical diffraction phenomenon can be further improved.
  • the width d of the first light-shielding strip 40 refers to the size of one first light-shielding strip 40 in a direction perpendicular to the extending direction of the first light-shielding strip 40; two adjacent first The distance e between the light-shielding strips 40 refers to the distance between two adjacent first light-shielding strips 40 in a direction perpendicular to the extending direction of the first light-shielding strips 40.
  • the width d of the first light-shielding strip 40 refers to the dimension of one first light-shielding strip 40 in the direction perpendicular to the first direction;
  • the distance e between two adjacent first light-shielding strips 40 refers to the distance between two adjacent first light-shielding strips 40 in a direction perpendicular to the first direction.
  • the width of the first gathering portion 50 By selecting the width of the first gathering portion 50, the distance between two adjacent first gathering portions 50, and a set of selected first traces corresponding to each first gathering portion 50, the first selected By setting the number of traces 201, the width of the first light-shielding bar 40 and the spacing between two adjacent first light-shielding bars 40 can be set.
  • the lower limit value of the distance e between two adjacent first light-shielding bars 40 is e1
  • the upper limit value is e2.
  • the distance e between two adjacent first light-shielding strips 40 By making the distance e between two adjacent first light-shielding strips 40 less than or equal to its upper limit value e2, it can be avoided that the distance e between two adjacent first light-shielding strips 40 is too large, resulting in the first light-shielding stripe
  • the number of 40 is small (in the case where the area of the sensing component area C1 is fixed, the distance e between two adjacent first light-shielding bars 40 is too large, the number of first light-shielding bars 40 will decrease), thus The number of the first gathering portions 50 corresponding to the first light-shielding strips 40 is relatively small; and for the array substrate 131, the number of the first traces 20 is fixed, and the selected first area passes through the sensing component area C1
  • the number of traces 201 is also fixed, so that the number of selected first traces 201 of each group corresponding to each first gathering part 50 is larger, which may result in the selection of the first trace of each
  • the lower limit value of the width d of one first light-shielding strip 40 is d1 and the upper limit value is d2.
  • width d of one first light-shielding strip 40 By making the width d of one first light-shielding strip 40 less than or equal to its upper limit value d2, it can be avoided that the width d of the first light-shielding strip 40 is too large, which may cause the spacing e between two adjacent first light-shielding strips 40 Too small, so that the optical diffraction phenomenon may occur, and the amount of light passing through is reduced.
  • the ratio of the width d of one first light-shielding strip 40 to the distance e between two adjacent first light-shielding strips 40 is greater than 0 and less than or equal to 0.5.
  • the ratio of the width d of one first light-shielding strip 40 to the distance e between two adjacent first light-shielding strips 40 may be 1/2 or 7.5 / 16.125.
  • the ratio of the width d of one first light-shielding strip 40 to the interval e between two adjacent first light-shielding strips 40 is greater than 0 and less than or equal to 0.5
  • the The sum f of the width d and the spacing e between two adjacent first light-shielding strips 40 is greater than or equal to 94.5 ⁇ m and less than or equal to 200 ⁇ m.
  • the sum f of the width d of one first light-shielding strip 40 and the distance e between two adjacent first light-shielding strips 40 may be 94.5 ⁇ m, 100 ⁇ m, or 200 ⁇ m.
  • the two opposite sides of the first light-shielding strip 40 in the second direction may exceed the boundary defined by the two selected first traces 201 on the outermost side of the corresponding first gathering portion 50, and It may be aligned with the boundary defined by the two selected first traces 201 on the outermost side of the corresponding first gathering portion 50.
  • the ratio of the width d of one first light-shielding strip 40 to the spacing e between two adjacent first light-shielding strips 40 is greater than 0, and less than or equal to 0.5, and a first The sum of the width d of a light-shielding strip 40 and the distance e between two adjacent first light-shielding strips 40 is greater than or equal to 94.5 ⁇ m and less than or equal to 200 ⁇ m, which can ensure that the light is diffracted when passing through the sensing component area C1 The phenomenon can be further reduced, so that the light information sensed by the sensing component 2 is more accurate.
  • the inventor of the present disclosure has verified through experiments that the ratio of the width d of one first light-shielding strip 40 to e between two adjacent first light-shielding strips 40 is set Is 7.5 / 16.125, and at the same time, the sum of the width d of one first shading strip 40 and the distance e between two adjacent first shading strips 40 is set to 94.5 ⁇ m. The diffraction phenomenon is effectively reduced, and the sharpness of the captured image is high.
  • the width of the first light-shielding strip 40 is different along the extending direction of the first light-shielding strip 40, for example, where the thin film transistor is provided, the width of the first light-shielding strip 40 is wider, and the thin film is not provided Where the transistor is, the width of the first light-shielding strip 40 is relatively narrow.
  • the distance between two adjacent first light-shielding strips 40 increases, so that more light passes through the sensing component area C1 and is sensed by the sensing component 2.
  • the distance e between two adjacent first light-shielding strips 40 means that The distance between the same positions in the direction of the extending direction of the first light-shielding bar 40.
  • the width of the same first shading bar 40 is the same everywhere. In this way, the manufacturing process of the first light-shielding strip 40 can be simplified, and the manufacturing efficiency can be improved. In some examples, when the width of the same first light shielding strip 40 is the same, the spacing between two adjacent first light shielding strips 40 may be the same or different. In other examples, when the width of each first light-shielding strip 40 is the same, the widths of the plurality of first light-shielding strips 40 are all the same, so that the process steps can be simplified when preparing the first light-shielding strip 40 To reduce the process difficulty.
  • the number of the plurality of selected first traces 201 corresponding to each first gathering portion 50 can be set to be equal, and The spacing between two selected first traces 201 in the first traces is set to be equal, so that the mutual selection between the multiple selected first traces 201 in each group of selected first traces 201
  • the degree of influence is the same, so that the influence of the plurality of selected first traces 201 in the sensing component area C1 on the transmitted light is the same, and the accuracy of the light information collected by the sensing component 2 is improved.
  • one first trace 20 includes one or more first sub-traces 20a.
  • one first trace 20 includes one first sub-trace 20a.
  • one first trace 20 includes two first sub-traces 20a.
  • the two adjacent first sub-traces 20a are spaced apart from each other. Since the selected first trace 201 is the trace passing through the sensing component area C1 among the plurality of first traces 20 of the array substrate 131, the foregoing embodiment is also applicable to each selected first trace 201.
  • the first sub-trace 20a included in one first trace 20 is a data line, an initialization signal line, a first power line (Vdd line), a first At least one of two power lines (Vss line) and the like.
  • the first sub-trace 20a included in one first trace 20 is at least one of a gate line, a control line, a common voltage signal line, etc. . Since the selected first trace 201 is a trace that passes through the sensing component area C1 among the plurality of first traces 20 of the array substrate 131, the foregoing embodiment is also applicable to each selected first trace 201.
  • one first trace 20 when one first trace 20 includes multiple first sub-traces 20a, the types of the first sub-traces 20a included in the first trace 20 may be the same or different.
  • one first trace 20 includes two data lines.
  • a first trace 20 includes a data line and a Vdd line. Since the selected first trace 201 is a trace that passes through the sensing component area C1 among the multiple first traces of the array substrate, the foregoing embodiment is also applicable to each selected first trace 201.
  • a column of sub-pixels is coupled to a first trace 20.
  • a column of pixels corresponds to at least one first trace.
  • one pixel 10 includes one sub-pixel, and one column of pixels corresponds to one first trace 20.
  • one pixel includes two sub-pixels, and one column of pixels corresponds to two first traces 20.
  • a pixel includes three sub-pixels, and a column of pixels corresponds to three first traces 20. Since the selected first trace 201 is a trace that passes through the sensing component area C1 among the multiple first traces of the array substrate, the foregoing embodiment is also applicable to each selected first trace 201.
  • the number of sub-pixels included in a pixel 10 and the data trace included in the first trace 20 coupled to the pixel 10 Number related.
  • the first trace 20 to which the pixel 10 is coupled includes a data line; if a pixel 10 includes two sub-pixels, the first coupling to the pixel 10
  • the trace 20 includes two data lines; if a pixel 10 includes three sub-pixels, the first trace 20 coupled to the pixel 10 includes three data lines.
  • each item corresponding to the same column of pixels can be selected
  • the first traces 201 are gathered in the same gathering part 50, so that the distribution of the traces in the sensing component area C1 is more regular, and the degree of diffraction of light passing through the area is further reduced.
  • the array substrate further includes a plurality of second traces 30 along the second direction, where the second direction crosses the first direction.
  • the arrangement of the plurality of second traces 30 extending in the second direction is also dense, and the spacing between two adjacent second traces 30 is small.
  • the arrangement density of the second trace 30 is greater.
  • the array substrate 131 provided by some embodiments of the present disclosure further includes a plurality of second traces 30 and at least one extending in the second direction Second shading strip 60.
  • the first direction and the second direction intersect, for example, the first direction and the second direction are perpendicular to each other, and the angle between the first direction and the second direction is an acute angle.
  • the first direction and the second direction are perpendicular to each other as an example.
  • the plurality of second traces 30 are arranged at intervals. Among the plurality of second traces 30, the trace passing through the sensing component area C1 is the selected second trace 301, and the plurality of selected second traces 301 Divided into at least one group, each selected second trace includes at least two adjacent selected second traces 301, and each selected second trace 301 of each selected second trace is in the sensing component area C1 gathers to form a second gather 70.
  • the second traces numbered T 1 to T 4 are selected second traces 301.
  • the plurality of selected second traces 301 can be divided into two groups, each group of selected second traces includes two adjacent selected second traces 301, and each group of selected second traces includes two
  • the selected second traces 301 are gathered in the sensing component area C1 to form one second gathering portion 70, and two sets of selected second traces 301 are gathered in the sensing component area C1 to form two second gathering portions 70.
  • the selected second traces 301 numbered T 1 and T 2 serve as a set of selected second traces, and are gathered in the sensing component area C1 to form a second gathering portion 70; the number is T
  • the selected second traces 301 of 3 and T 4 serve as a group of selected second traces, and are gathered in the sensing component area C1 to form a second gathering portion 70.
  • the selected second trace 301 numbered T 2 includes a first portion extending in the second direction and extending in the first direction The second part of the first part and the second part are staggered and connected end to end.
  • the second trace 301 is close together to form a second gathering portion 70.
  • the second gathering part 70 includes a portion where the selected second trace 301 numbered T 1 is located in the sensing component area C1 and a portion where the selected second trace 301 numbered T 2 is located in the sensing component area C1.
  • the structure of the other second gathering portion 70 is similar to the structure of the second gathering portion 70 described above, and will not be repeated here.
  • At least one second light-shielding strip 60 is disposed on a side of the plurality of second traces 30 that is away from or close to the display surface of the array substrate 131, and each second light-shielding strip 60 is on the display surface (That is, the side on which the array substrate 131 is configured to display when it is used in the display panel)
  • the orthographic projection on the display surface covers the orthographic projection of the second gathering portion 70 on the display surface.
  • the embodiment of the present disclosure does not limit the position of the at least one second light-shielding strip 60 relative to the plurality of second traces 30, as long as each second light-shielding strip 60 can be placed on the display surface of the array substrate 131
  • the orthographic projection only needs to cover the orthographic projection of the second gathering part 70 on the display surface.
  • one second shading bar 60 can block at least two adjacent selected second traces 301 in the second gathering part 70 The gap between them prevents the light from passing through the gap between the selected second traces 301 in the second gathering part 70 to cause diffraction.
  • FIG. 9B shows a case where the at least one second light-shielding strip 60 is disposed on a side of the plurality of second traces 30 close to the display surface of the array substrate 131, wherein at least one second light-shielding strip 60 is disposed on the side of the plurality of second traces 30 away from the base substrate 80;
  • FIG. 9C shows that the at least one second light-shielding strip 60 is disposed on the plurality of second traces 30 away from the array substrate 131
  • at least one second light-shielding strip 60 is disposed on the side of the plurality of second traces 30 close to the base substrate 80.
  • the at least one second light-shielding bar 60 is disposed on a side of the plurality of selected first traces 201 near the display surface of the array substrate 131, so that the second light-shielding bar
  • the preparation of the strip 60 can be compatible with the preparation process of the light-shielding pattern for shielding the active layer of the thin film transistor in the array substrate 131, and no additional step for preparing the second light-shielding strip 60 is required, which simplifies the preparation process of the array substrate 131 .
  • the at least one second light-shielding strip 60 is disposed on a side of the plurality of second traces 301 away from or near the display surface of the array substrate 131, and each second light-shielding strip 60 is on the display surface.
  • the orthographic projection covers an orthographic projection of the second gathering portion 70 on the display surface, which means that the number of the second shading bars 60 is the same as the number of the second gathering portion 70.
  • each group of selected second traces includes at least two adjacent selected second traces Line 301, and each selected second trace of each group of selected second traces 301 is gathered in the sensing component area C1 to form a second gathering part 70, which is equivalent to making each group of selected second traces of each group
  • the selected second traces 301 are close to each other in the sensing component area, so that the adjacent two selected second traces 301 in each group of selected second traces are closer to each other in the sensing component area C1.
  • the two second gathers 70 are farther apart, and the distance between two adjacent second gathers 70 is larger than the distance between two adjacent second traces 30 in the non-inductive part area C2 .
  • the gap between at least two adjacent selected second traces 301 in the second gathering portion 70 is blocked, blocking the transmission of light through these gaps and preventing light
  • An optical diffraction phenomenon occurs when a gap between at least two adjacent selected second traces 301 in the second gathering portion 70 is transmitted.
  • each group of the selected second traces selects the second trace
  • the arrangement density of the plurality of second gathering portions 70 (corresponding to the arrangement density of the plurality of second light-shielding strips 60) formed after the wire 301 is gathered is relative to the arrangement when the plurality of second wires 30 are not gathered The density is reduced, so that when the light passes through the transparent sensing component area C1, the diffraction phenomenon is further reduced, and the influence of the diffraction of light on the brightness of the light is reduced, thereby further improving the accuracy of the light information sensed by the sensing component 2.
  • the sensing component 2 as a front camera, for example, when light passes through the transparent sensing component area C1, the diffraction phenomenon can be further reduced, so that the imaging effect of the front camera can be further improved, and the brightness and clarity of the resulting image Are better.
  • the gap g between two adjacent second gathering portions 70 is greater than the adjacent two in the non-sensing component area C2
  • the spacing h between two adjacent selected second traces 301 is smaller than the spacing k between two adjacent second traces 30 in the non-sensing component area C2.
  • the distance g between the two adjacent second gathers 70 is greater than the distance k between the two adjacent second traces 30 in the non-sensing component area C2.
  • the distance g between the two gathers 70 is the distance between the two closest second traces 30 in the two adjacent second gathers 70, so that the two adjacent second gathers 70 The distance g between them is larger than the distance k between two adjacent second traces 30 located in the non-sensing component area C2.
  • the distance between two adjacent second light-shielding strips 60 is The distance between two adjacent second traces 30 in the non-inductive component area C1 becomes larger, so that when light passes through the transparent inductive component area C1, the diffraction phenomenon can be reduced.
  • each second gathering portion 70 the spacing h between two adjacent selected second traces 301 is smaller than the spacing k between two adjacent second traces 30 in the non-sensing component area C2, In this way, in each second gathering portion 70, two adjacent selected second traces 301 are close to each other, so that the dimension of the second gathering portion 70 in the direction perpendicular to the extending direction of the second gathering portion 70 ( That is, the width of the second gathered part 70 is small, which ensures that the distance between the two adjacent second gathered parts 70 can be large, thereby further reducing the light diffraction phenomenon, and used to block the second gathered part 70
  • the width of the second light-shielding strip 60 of the gap between at least two adjacent selected second traces 301 is narrow, so that more light can pass through.
  • each group of selected second traces 301 included in each group of selected second traces is not limited, and each group of selected second traces may include two selected second traces 301; Figures 8A, 8B, 9A-9C show this situation; each group of selected second traces may also include more than two selected second traces 301, exemplarily, each group selected The number of selected second traces 301 included in the second trace 301 is three, four, and five.
  • the number of selected second traces 301 included in each group of selected second traces is the same.
  • the number of selected second traces 301 included in each group of selected second traces 301 is two, or the selected second traces included in each group of selected second traces 301
  • the number of lines 301 is three, or four or other numbers.
  • each group of selected second traces 301 includes two selected second traces 301, so that multiple groups of selected second traces 301 can be made
  • the widths of the corresponding plurality of second gathering portions 70 are all equal or approximately equal, and the width of the second light-shielding strip 60 is equal or approximately equal, so that each area in the sensing component area C1 has the same or approximate reduction in the diffraction of light Equally close, the light passing through each area of the sensing component area C1 is uniform, so that the accuracy of the light information sensed by the sensing component 2 is higher.
  • the spacing between each adjacent two second gathering portions 70 is equal; in each second gathering portion 70, the spacing between each adjacent two selected second traces is equal.
  • the distance between every two adjacent second gathers 70 is g.
  • each second gathering part 70 when each group of selected second traces includes three or more selected second traces 301, the distance between each adjacent two selected second traces 301 equal.
  • each second gathering portion 70 since the interval between each adjacent two second gathering portions 70 is equal, the interval between each adjacent two second shading bars 60 is also equal or approximately equal; in each second gathering portion 70, The distance between each adjacent two selected second traces 301 is equal, so that the widths of the plurality of second gathering portions 70 are all equal, and the widths of the second light-shielding strips 60 are equal or approximately equal, so that in the sensing component area Each area in C1 has the same or nearly equal reduction in the diffraction of light, and the light passing through each area of the sensing component area C1 is more uniform, so that the accuracy of the light information sensed by the sensing component 2 is higher.
  • the mitigation effect on the optical diffraction phenomenon can be further improved.
  • the width m of the second shading bar 60 refers to the size of one second shading bar 60 in the direction perpendicular to the extending direction of the second shading bar 60;
  • the interval p between the light-shielding bars 60 refers to the distance between two adjacent second light-shielding bars 60 in a direction perpendicular to the extending direction of the second light-shielding bars 60.
  • the width d of the second light-shielding strip 60 refers to the dimension of one second light-shielding strip 60 in the direction perpendicular to the first direction
  • the interval p between two adjacent second light-shielding strips 60 refers to the interval between two adjacent second light-shielding strips 60 in a direction perpendicular to the first direction.
  • the width of the second gathering portion 70 By selecting the width of the second gathering portion 70, the distance between two adjacent second gathering portions 70, and a set of selected second traces corresponding to each second gathering portion 70, the first selected By setting the number of traces 301, the width of the second light-shielding strip 60 and the spacing between two adjacent second light-shielding strips 60 can be set.
  • the interval p between two adjacent second light-shielding strips 60 By making the interval p between two adjacent second light-shielding strips 60 less than or equal to its upper limit p2, it is possible to avoid the second light-shielding caused by the interval p between the two adjacent second light-shielding strips 60 being too large
  • the number of bars 60 is small (in the case where the area of the sensing component area C1 is constant, the distance p between two adjacent second light-shielding bars 60 is too large, the number of second light-shielding bars 60 will decrease), As a result, the number of second gathering portions 70 corresponding to the second light-shielding strip 60 is reduced; and for the array substrate 131, the number of second traces 30 is fixed, and the second The number of traces 301 is also fixed, so that the number of selected second traces 301 of each group corresponding to each second gathering portion 70 is larger, which may result in the selected second traces of each group The selected second traces 301 in the line affect each other,
  • the lower limit value of the width m of one second light-shielding strip 60 is m1
  • the upper limit value is m2.
  • width m of one second light-shielding strip 60 By making the width m of one second light-shielding strip 60 less than or equal to its upper limit m2, it can be avoided that the width m of the second light-shielding strip 60 is too large, which may cause the spacing p between two adjacent second light-shielding strips 60 Too small, so that optical diffraction may occur, and the amount of light passing through is reduced.
  • the ratio of the width m of one second light-shielding strip 60 to the pitch p between two adjacent second light-shielding strips 60 is greater than 0 and less than or equal to 0.5.
  • the ratio of the width m of one second light-shielding strip 60 to the pitch p between two adjacent second light-shielding strips 60 may be 1/2 or 7.5 / 16.125.
  • the ratio of the width m of one second shading bar 60 to the spacing p between two adjacent second shading bars 60 is greater than 0 and less than or equal to 0.5
  • the The sum n of the width m and the pitch p between two adjacent second light-shielding strips 60 is greater than or equal to 94.5 ⁇ m and less than or equal to 200 ⁇ m.
  • the sum n of the width m of one second light-shielding strip 60 and the pitch p between two adjacent second light-shielding strips 60 may be 94.5 ⁇ m, 100 ⁇ m, or 200 ⁇ m.
  • a second light-shielding strip 60 in the first direction may exceed the boundary defined by the two selected second traces 301 on the outermost side of the corresponding second gathering portion 70, and It can be aligned with the boundary defined by the two selected second traces 301 on the outermost side of the corresponding second gathering portion 70.
  • the ratio of the width m of one second light-shielding strip 60 to the pitch p between two adjacent second light-shielding strips 60 is greater than 0, and less than or equal to 0.5, and a first
  • the summation n of the width m of the two light-shielding strips 60 and the interval p between the adjacent two second light-shielding strips 60 is greater than or equal to 94.5 ⁇ m and less than or equal to 200 ⁇ m, which can ensure that The diffraction phenomenon can be further reduced, so that the light information sensed by the sensing component 2 is more accurate.
  • the ratio of the width m of one second light-shielding strip 60 to the interval p between two adjacent second light-shielding strips 60 and the width d of one first light-shielding strip 40 is the same as the width d of one first light-shielding strip 40
  • the ratio of the spacing e between the strips 40 may be equal or unequal; the sum n of the width m of one second shading strip 60 and the spacing p between the adjacent two second shading strips 60 and one first shading strip
  • the width d of the width 40 and the sum f of the spacing e between the two adjacent first light-shielding strips 40 may be equal or different.
  • the width m of one second light-shielding strip 60 and the adjacent two second light-shielding strips 60 The sum n of the intervals p between them is greater than the sum f of the width d of one first light-shielding strip 40 and the distance e between two adjacent first light-shielding strips 40, for example, in this case, a second light-shielding strip 60
  • the width m of the width m and the distance p between two adjacent second light-shielding strips 60 are 180 ⁇ m
  • the width d of one first light-shielding strip 40 is the sum of the distance e between two adjacent first light-shielding strips 40 f is 120 ⁇ m.
  • the width of the second light-shielding strip 60 is different. For example, where the thin film transistor is provided, the width of the second light-shielding strip 60 is wider, and the thin film is not provided. Where the transistor is, the width of the second light-shielding strip 60 is relatively narrow.
  • the distance between two adjacent second light-shielding strips 60 increases, so that more light passes through the sensing component area C1 and is sensed by the sensing component 2.
  • the distance k between two adjacent second light-shielding strips 60 means that the edges of the two adjacent second light-shielding strips 60 are perpendicular to The spacing between the same positions in the direction of the extending direction of the second light-shielding bar 60.
  • the width of the same second light-shielding strip 60 is the same everywhere. In this way, the manufacturing process of the second light-shielding strip 60 can be simplified, and the manufacturing efficiency can be improved. In some examples, in the case where the width of the same second light-shielding strip 60 is the same, the spacing between two adjacent second light-shielding strips 60 may be the same or different. For example, in the case where the width of each second light-shielding strip 60 is the same, the widths of the plurality of second light-shielding strips 60 are all the same. In this way, when preparing the second light-shielding strip 60, the process steps can be simplified and the process difficulty can be reduced.
  • the number of the plurality of selected second traces 301 corresponding to each second gathering portion 70 can be set to be equal, and Set the spacing between two adjacent selected second traces 301 in the second trace to be equal, so that the selected second traces 301 in each group of selected second traces can be mutually
  • the degree of influence is the same, so that the influence of multiple sets of selected second traces 301 in the sensing component area C1 on the transmitted light is the same, and the accuracy of the light information collected by the sensing component 2 is improved.
  • one second trace 30 includes one or more second sub-traces 30a.
  • one second trace 30 includes one second sub-trace 30a.
  • one second trace 30 includes two second sub-traces 30a.
  • the two adjacent second sub-traces 30a are spaced apart from each other. Since the selected second trace 301 is the trace passing through the sensing component area C1 among the plurality of second traces 30 of the array substrate 131, the foregoing embodiment is also applicable to each selected second trace 301.
  • one second trace 30 includes one or more second sub-traces 30a.
  • one second trace 30 includes one second sub-trace 30a.
  • one second trace 30 includes two second sub-traces 30a.
  • the two adjacent second sub-traces 30a are spaced apart from each other. Since the selected second trace 301 is the trace passing through the sensing component area C1 among the plurality of second traces 30 of the array substrate 131, the foregoing embodiment is also applicable to each selected second trace 301.
  • the second sub-trace 30a included in one second trace 30 is at least a gate line, a control line, a common signal line (Com line), etc.
  • the second sub-trace 30a included in one second trace 30 is a data line, an initialization signal line, a first power line (Vdd line), At least one of the second power supply line (Vss line) and the like. Since the selected second trace 301 is the trace passing through the sensing component area C1 among the plurality of second traces 30 of the array substrate 131, the foregoing embodiment is also applicable to each selected second trace 301.
  • one second trace 30 when one second trace 30 includes multiple second sub-traces 30a, the types of the second sub-traces 30a included in the second trace 30 may be the same or different.
  • one second trace 30 includes two gate lines.
  • a second trace 30 includes a gate line and a Vss line. Since the first trace 201 is selected as the trace passing through the sensing component area C1 among the plurality of second traces 30 of the array substrate 131, the foregoing embodiment is also applicable to each selected second trace 301.
  • the number of multiple first sub-traces 20a included in one first trace 20 is the same as the number of multiple second sub-traces 30a included in one second trace 30.
  • the number of multiple first sub-traces 20a included in one first trace 20 and the number of multiple second sub-traces 30a included in one second trace 30 are both two.
  • the number of multiple first sub-traces 20a included in one first trace 20 is different from the number of multiple second sub-traces 30a included in one second trace 30 .
  • At least one first light-shielding strip 40 and at least one second light-shielding strip 60 of the array substrate 131 may be in the same film layer and have the same material. In this way, the at least one first light-shielding strip 40 and the at least one second light-shielding strip 60 can be formed under the same manufacturing process, thereby simplifying the manufacturing process and saving process steps.
  • the at least one first light-shielding strip 40 and the at least one second light-shielding strip 60 may be formed in the same layer as the light-shielding pattern for blocking the active layer of the thin film transistor in the array substrate 131, so that the at least one first light-shielding strip
  • the preparation of the light-shielding strip 40 and the at least one second light-shielding strip 60 can be compatible with the preparation process of the light-shielding pattern, so that there is no need to additionally provide the preparation of the at least one first light-shielding strip 40 and the at least one second
  • the process of the light-shielding strip 60 further simplifies the manufacturing process of the array substrate.
  • the materials of the at least one first light-shielding strip 40 and the at least one second light-shielding strip 60 are not limited, as long as they can play the role of light shielding.
  • the materials of the at least one first light-shielding strip 40 and the at least one second light-shielding layer 60 are all one of opaque materials such as black ink, black resin or metal.
  • an insulating layer is provided between the at least one first light-shielding strip 40 and the plurality of selected first traces 201 of the array substrate 131 To avoid electrical communication between the two; in the case where the material of the at least one second light-shielding strip 60 is a conductive material such as metal, the at least one second light-shielding strip 60 and the plurality of selected second traces An insulating layer is provided between 301 to prevent the two from being electrically connected.
  • some embodiments of the present disclosure provide a display panel 13 that includes the array substrate 131 as described in any of the above embodiments.
  • the display panel 13 provided by the embodiment of the present disclosure may be a liquid crystal display panel (Liquid Crystal Display, referred to as LCD); it may also be an organic electroluminescence display panel (Organic Light-Emitting Display, referred to as OLED); of course, it may also be a quantum dot Electroluminescence display panel (Quantum Dot Light-Emitting Display, referred to as QLED).
  • LCD Liquid Crystal Display
  • OLED Organic Light-Emitting Display
  • QLED Quantum Dot Light-Emitting Display
  • the display panel 13 When the display panel 13 is a liquid crystal display panel, the display panel 13 includes an array substrate 131, a color filter substrate, and a liquid crystal layer disposed between the color filter substrate and the array substrate 131.
  • the display panel 13 When the display panel 13 is an organic electroluminescence display panel or a quantum dot electroluminescence display panel, the display panel 13 includes an array substrate 131 and an encapsulation layer for encapsulating the array substrate 131.
  • the array substrate 131 includes a thin film transistor and a light emitting device, and the light emitting device includes an anode, a light emitting layer, and a cathode.
  • the encapsulation layer may be a thin-film encapsulation layer or a substrate encapsulation layer.
  • the display panel 13 provided by an embodiment of the present disclosure has a sensing component area C1 and a non-sensing component area C2.
  • the non-sensing part area C2 has a display function
  • the sensing part area C1 is transparent and has a display function.
  • the first trace 20 (or the first trace 20 and the second trace 30) passing through the sense component area C1 is designed for gathering , so that the distance between two adjacent first gathers 50 (or two adjacent first gathers 50 and two adjacent second gathers 70) becomes larger, so that when light passes through the sensing component area C1, The light diffraction phenomenon is reduced, so that the accuracy of the light information sensed by the sensing component 2 is improved.
  • the display panel 13 may further have a non-display area D, which may be, for example, a frame.
  • some embodiments of the present disclosure provide a display device 300 that includes a display panel 13 and at least one sensing component 2.
  • the display panel 13 is the display panel 13 provided by the above embodiment.
  • the at least one sensing component 2 is disposed on the non-display surface side of the display panel 13, and the orthographic projection of the at least one sensing component 2 on the display panel 13 is within the sensing component area C1 of the display panel 13.
  • the sensing surface of each sensing member 2 faces the display surface side of the display panel 13.
  • the at least one sensing component 2 includes one or more of a front camera, a light sensor, a 3D sensing module, and the like.
  • the photosensitive surface of the front camera faces the display surface side of the display panel 13 to photograph the front surface of the display device 300 (ie, display) through the sensing component area C1 of the display panel 13 Face side) image of the object to be captured.
  • the sensing component 2 includes an optical sensor
  • the photosensitive surface of the optical sensor faces the display surface side of the display panel 13 to sense the front surface of the display device 300 (ie, the display surface side) through the sensing component area C1 of the display panel 13 Light.
  • the sensing component 2 includes a 3D sensing module
  • the light emitting surface and the photosensitive surface of the 3D sensing module face the display surface side of the display panel 13 to emit light to the display device through the sensing component area C1 of the display panel 13
  • the object on the front side of the 300 receives the light reflected by the object to realize the sensing of the 3D spatial structure of the object.
  • the captured image has higher brightness and better definition.
  • the area facing the sensing component 2, such as a front camera, that is, the sensing component area C1 has a high light transmittance and a small optical diffraction, so the display device 300 is applied to mobile phones and tablets When in the terminal, it can greatly increase the screen ratio of the terminal screen to achieve full-screen display, and the light-sensing effect of the sensing component 2 is not affected by light diffraction or the degree of light diffraction is slightly affected.

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Abstract

一种阵列基板（131），具有非感应部件区（C2）和透明的感应部件区（C1）；阵列基板（131）包括：沿第一方向延伸的多条第一走线（20），多条第一走线（20）中经过感应部件区（C1）的走线为选定第一走线（201）；多条选定第一走线（201）分为至少一组，每组包括至少两条相邻的选定第一走线（201），每组的各条选定第一走线（201）在感应部件区（C1）收拢形成一个第一收拢部（50）。至少一个第一遮光条（40），设置于多条第一走线（20）远离或靠近阵列基板（131）的显示面的一侧，每个第一遮光条（40）在显示面上的正投影覆盖一个第一收拢部（50）在显示面上的正投影。

Description

阵列基板、显示面板及显示装置
本公开要求于2018年10月11日提交国家知识产权局、申请号为201811185860.1、发明名称为“一种显示面板及显示装置”的中国专利公开的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，尤其涉及一种阵列基板、显示面板及显示装置。
背景技术
显示屏的屏占比是指，显示屏显示面的显示区的面积与显示屏显示面的总面积的比值。追求大的屏占比是显示技术领域的发展趋势之一。全面屏是指显示屏显示面的显示区的面积与显示屏显示面的总面积相等或近似相等的屏幕，其屏占比较高。
发明内容
一方面，提供一种阵列基板，所述阵列基板具有非感应部件区和透明的感应部件区。所述阵列基板包括：沿第一方向延伸的多条第一走线，所述多条第一走线中经过所述感应部件区的走线为选定第一走线，多条所述选定第一走线分为至少一组，每组包括至少两条相邻的选定第一走线，每组的各条选定第一走线在所述感应部件区收拢形成一个第一收拢部；至少一个第一遮光条，设置于所述多条第一走线远离或靠近所述阵列基板的显示面的一侧，每个所述第一遮光条在所述显示面上的正投影覆盖一个所述第一收拢部在所述显示面上的正投影。
在一些实施例中，相邻两个所述第一收拢部之间的间距大于位于所述非感应部件区的相邻两条第一走线之间的间距。每个所述第一收拢部中，相邻两条选定第一走线之间的间距小于位于所述非感应部件区的相邻两条第一走线之间的间距。
在一些实施例中，各组选定第一走线所包括的所述选定第一走线的条数相同。
在一些实施例中，每相邻两个所述第一收拢部之间的间距相等。每个所述第一收拢部中，每相邻两条选定第一走线之间的间距相等。
在一些实施例中，一个所述第一遮光条的宽度与相邻两个所述第一遮光条之间的间距的比值大于0，且小于或等于0.5。
在一些实施例中，一个所述第一遮光条的宽度与相邻两个所述第一遮光条之间的间距之和大于或等于94.5μm，且小于或等于200μm。
在一些实施例中，所述第一走线包括一条或多条第一子走线。
在一些实施例中，阵列基板还包括：沿第二方向延伸的多条第二走线，所述第一方向和所述第二方向相交叉，其中，所述多条第二走线中经过所述感应部件区的走线为选定第二走线，多条所述选定第二走线分为至少一组，每组包括至少两条相邻的选定第二走线，每组的各选定第二走线在所述感应部件区呈收拢趋势形成一个第二收拢部；至少一个第二遮光条，设置于所述多条第二走线远离或靠近所述阵列基板的显示面的一侧，每个所述第二遮光条在所述显示面上的正投影覆盖一个所述第二收拢部在所述显示面上的正投影。
在一些实施例中，相邻两个所述第二收拢部之间的间距大于位于所述非感应部件区的相邻两条第二走线之间的间距。每个所述第二收拢部中，相邻两条选定第二走线之间的间距小于位于所述非感应部件区的相邻两条第二走线之间的间距。
在一些实施例中，各组选定第二走线所包括的所述选定第二走线的条数相同。
在一些实施例中，每相邻两个所述第二收拢部之间的间距相等。每个所述第二收拢部中，每相邻两条选定第二走线之间的间距相等。
在一些实施例中，一个所述第二遮光条的宽度与相邻两个所述第二遮光条之间的间距的比值大于0，且小于或等于0.5。
在一些实施例中，一个所述第二遮光条的宽度与相邻两个所述第二遮光条之间的间距之和大于或等于94.5μm，且小于或等于200μm。
在一些实施例中，所述第一遮光条与所述第二遮光条处于同一膜层，且材料相同。
在一些实施例中，所述第二走线包括一条或多条第二子走线。
另一方面，提供一种显示面板，包括：如上任一实施例所述的阵列基板。
再一方面，提供一种显示装置，包括：如上一些实施例所述的显示面板；设置于所述显示面板的非显示面侧的至少一个感应部件，所述至少一个感应部件在所述阵列基板上的正投影处于所述阵列基板的感应部件区内，且每个所述感应部件的感应面朝向所述阵列基板的显示面侧。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。
图1A为根据相关技术中显示装置的一种正视结构示意图；
图1B为沿图1A中的截面线SS’的截面结构示意图；
图2A为根据相关技术中显示装置的另一种正视结构示意图；
图2B为沿图2A中的截面线TT’的截面结构示意图；
图3A为根据本公开一些实施例中显示装置的一种正视结构示意图；
图3B为沿图3A中的截面线MM’的截面结构示意图；
图4A为根据本公开一些实施例的显示面板的区域划分的示意图；
图4B为图中4A中区域E的放大结构示意图；
图5A为根据本公开一些实施例的阵列基板的一种结构示意图；
图5B为根据本公开一些实施例的阵列基板的另一种结构示意图；
图6A为图5B中感应部件区C1的放大结构示意图；
图6B为沿图6A中的截面线PP’的一种截面结构示意图；
图6C为沿图6A中的截面线PP’的另一种截面结构示意图；
图7为根据本公开一些实施例的阵列基板的再一种结构示意图；
图8A为根据本公开一些实施例的阵列基板的又一种结构示意图；
图8B为根据本公开一些实施例的阵列基板的又一种结构示意图；
图9A为图8B的感应部件区C1的放大结构示意图；
图9B为沿图9A中的截面线OO’的一种截面结构示意图；
图9C为沿图9A中的截面线OO’的另一种截面结构示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
本公开实施例所涉及的显示装置可以应用于手机、平板显示器、电脑、电视监视器等任意具有显示功能的终端中，显示装置可以是显示不论运动(例如，视频)还是固定(例如，静止图像)的，且不论文字还是图画的图像的任何 装置。
下文中，所涉及的“显示面侧”是指，显示装置或者显示面板的进行图像显示的一侧；“非显示面板侧”是指，显示装置或者显示面板中与进行图像显示的一侧相对的一侧。
在一些实施例中，显示装置包括感应部件，以显示装置所应用的终端为手机为例，显示装置包括诸如前置摄像头、光传感器、3D感测模块等感应部件，这些感应部件需要感应来自显示装置的显示面侧的光线，以实现相应的功能。例如，手机中的前置摄像头在进行图像拍摄时，需要采集位于手机正面(即显示面侧)的待拍摄物体的光，以实现拍摄成像。
在一种相关技术中，如图1A和图1B所示，显示装置100的显示面板11具有显示区A1和非显示区B1，通过在显示面板11中打孔，将感应部件2(例如前置摄像头)嵌入所打的孔中，这样感应部件2可以感应来自显示面板11的显示面侧的光线。
在另一种相关技术中，如图2A和图2B所示，显示装置200的显示面板12具有显示区A2和透明区B2，感应部件2设置在显示装置200的显示面板12的非显示面侧，且感应部件2与显示面板12的透明区B2正对，即感应部件2在显示面板12的显示面上的正投影处于透明区B2内。这样来自显示面板12的显示面侧的光线可以透过透明区B2，被感应部件20所感应。
以上两种感应部件2的设置方式，在显示面板的显示面均存在不能进行显示的区域，降低了显示装置的屏占比，显示面板的显示区域的面积与显示面板的总面积之比无法达到百分之百，无法实现全面屏显示。
为实现较高的屏占比，在本公开的一些实施例中，如图3A和图3B所示，显示装置300包括显示面板13，及感应部件2。显示面板13具有感应部件区C1和非感应部件区C2；其中，非感应部件区C2包括显示区，能够进行图像显示；非感应部件区C2例如可围绕感应部件区C1或者半包围感应部件区C1，感应部件区C1透明且能够进行图像显示。感应部件2设置在显示面板13的非显示面侧，且感应部件2与显示面板13的感应部件区C1正对，即感应部件2在显示面板13的显示面上的正投影处于感应部件区C1内。
感应部件2的感应面朝向显示面板13的显示面侧。由于感应部件区C1透明，因此感应部件2可以透过感应部件区C1感应来自显示面板13的显示面侧的光线，从而进行相应操作。以感应部件2为前置摄像头为例，前置摄像头通过感应部件区C1获取来自显示面板13的显示面侧的待拍摄物体的光线，从而进行成像，拍摄得到该待拍摄物体的图像。
为了使感应部件区C1具有较高的光透过率，以使设置在显示面板13的非显示面侧的感应部件2可以透过感应部件区C1感应到更多来自显示面板1的显示面侧的光线，如图4A和图4B所示，在一些实施例中，将显示面板13进行如下设计：显示面板13的显示区(包括感应部件区C1和非感应部件区C2)包括多个像素点10，多个像素点10例如可呈阵列式排布。
为了更清楚的说明本公开的技术方案，以下从显示面板13的显示面中划分出区域E，对处于区域E中的结构进行说明，图4B为将区域E进行放大后的结构示意图。区域E包括非感应部件区C2的部分区域和感应部件区C1，其中所述“非感应部件区C2的部分区域”为非感应部件区C2中，临近感应部件区C1且位于感应部件区C1周边的区域。非感应部件区C2的位于区域E之外的区域的结构，可参考非感应部件区C2的位于区域E之内的部分区域的结构。
采用降低感应部件区C1的PPI(Pixels Per Inch，像素密度)的方式，即相对于非感应部件区C2，减小感应部件区C1的像素点10的个数，从而在感应部件区C1，像素点10所占用的空间减小，可以让出空间使得光线可以透过，使感应部件区C1具有较高的光透过率。
然而，本公开的发明人经研究发现：
请参见图4B，显示面板13的显示区(以区域E为例，区域E包括非感应部件区C2的部分区域和感应部件区C1)，设有沿第一方向延伸的多条第一走线20和沿第二方向延伸的多条第二走线30，多条第一走线20间隔设置，多条第二走线30间隔设置。第一方向和第二方向相交叉，示例性的，第一方向为多个像素点10排列的列方向，第二方向为多个像素点10排列的行方向。在第一方向为列方向，第二方向为行方向的情况下，第一走线包括数据线(Data线)、初始化信号线、第一电源线(Vdd线)、第二电源线(Vss线)等，第二走线包括栅线(Gate线)、控制线、公共电压信号线(Com线)等。由于非感应部件区C2的PPI较高，因此第一走线20的排布较密，相邻两条第一走线20之间的间距较小。
感应部件区C1的第一走线20的排布密度与非感应部件区C2是相同的。这是由于，对于处于感应部件区C1的多个像素点10所在的各子像素列，这些子像素列中处于非感应部件区C2的C22区域和C24区域的PPI，要与处于非感应部件区C2的C21区域和C23区域的PPI保持一致，因此非感应部件区C2的C22区域和C24区域的第一走线20以及第二走线30的排布密度，要与非感应部件区C2的C21区域和C23区域的第一走线20以及第二走线30 的排布密度保持一致，因此这些子像素列处于感应部件区C1的布线密度无法因其PPI的降低而降低。
这样，当光线透过感应部件区C1在显示面板13的显示面侧与感应部件2之间传输的过程中，由于感应部件区C1的多条第一走线20排布过密，相邻两条第一走线20之间的间距较小，可能导致光线在通过相邻两条第一走线20之间的间隙进行传播时，产生衍射现象，从而影响感应部件所感应到的光线信息的准确性。其中，光的衍射现象是指，光在传播过程中，遇到障碍物或小孔时，光将偏离直线传播的路径而绕到障碍物后面传播的现象，并且，障碍物之间的间距越小，或者小孔越小，衍射现象越为明显，在小孔线度小到可以和光波长相比拟时，光的衍射现象极为严重，光在传播时发生的衍射现象越明显，光线会变得越暗。
以感应部件2为前置摄像头为例，在前置摄像头透过显示面板13的感应部件区C1获取图像时，前置摄像头需要通过感应部件区C1获取位于显示面板13的显示面侧的待拍摄物体的光线，而由于第一走线20排布过密，光线在透过感应部件区C1时会产生光学衍射，导致前置摄像头采集到的光线信息不准确，进而导致前置摄像头的成像效果下降，例如图像亮度较低，清晰度较差，等。
基于上述，如图5A和图5B所示，本公开的一些实施例提供一种阵列基板131，该阵列基板131具有非感应部件区C2和透明的感应部件区C1。感应部件区C1和非感应部件区C2均具有显示功能，非感应部件区C2例如可围绕感应部件区C1或者半包围感应部件区C1。
上述阵列基板131具有非感应部件区C2和透明的感应部件区C1，当上述阵列基板131应用于包括感应部件2的显示装置中时，光线能够透过透明的感应部件区C1在阵列基板131的显示面侧与感应部件2之间传输，即来自显示面侧的光线能够透过感应部件区C1被感应部件2所感应。
上述阵列基板131包括：沿第一方向延伸的多条第一走线20。所述多条第一走线20间隔设置，所述多条第一走线20中经过感应部件区C1的走线为选定第一走线201；所述多条选定第一走线201分为至少一组，每组选定第一走线包括至少两条相邻的选定第一走线201，每组选定第一走线的各条选定第一走线201在感应部件区C1收拢形成一个第一收拢部50。
示例性的，如图5A所示，编号为L 1～L 6的第一走线为选定第一走线201。多条选定第一走线201可分为三组，每组选定第一走线包括两条相邻的选定第一走线201，每组选定第一走线所包括的两条选定第一走线201在感应部件 区C1收拢形成一个第一收拢部50，则三组选定第一走线201在感应部件区C1收拢形成三个第一收拢部50。
例如，请再次参见图5A，编号为L 1和L 2的选定第一走线201作为一组选定第一走线，在感应部件区C1收拢形成一个第一收拢部50；编号为L 3和L 4的选定第一走线201作为一组选定第一走线，在感应部件区C1收拢形成一个第一收拢部50；编号为L 5和L 6的选定第一走线201作为一组选定第一走线，在感应部件区C1收拢形成一个第一收拢部50。其中，以编号为L 1和L 2的两条选定第一走线201为例，编号为L 2的选定第一走线201包括沿第一方向延伸的第一部分和沿第二方向延伸的第二部分，第一部分和第二部分依次交错设置且首尾相接，通过这种结构，使得编号为L 2的选定第一走线201在感应部件区C1向编号为L 1的选定第一走线201靠拢，形成一个第一收拢部50。可以这样理解，第一收拢部50包括编号为L 1的选定第一走线201位于感应部件区C1的部分和编号为L 2的选定第一走线201位于感应部件区C1的部分。其他两个第一收拢部50的结构与前述第一收拢部50的结构类似，此处不再赘述。
如图6A～图6C所示，上述阵列基板131还包括至少一个遮光条40。所述至少一个第一遮光条40设置于所述多条第一走线20远离或靠近阵列基板131的显示面的一侧，每个第一遮光条40在阵列基板131的显示面(即阵列基板131应用于显示面板中时被配置为进行显示的一面)上的正投影覆盖一个第一收拢部50在所述显示面上的正投影。
本公开实施例对所述至少一个第一遮光条50相对于所述多条第一走线20的位置不做限定，只要能使每个第一遮光条40在阵列基板131的显示面上的正投影覆盖一个第一收拢部50在显示面上的正投影即可，这样，一个第一遮光条40能够遮挡一个第一收拢部50中至少两条相邻的选定第一走线201之间的缝隙，避免光线从第一收拢部50中的选定第一走线201之间的缝隙透过而引起衍射。
示例性的，图6B示出了所述至少一个第一遮光条40设置于所述多条第一走线20靠近阵列基板131的显示面的一侧的情形，其中，所述至少一个第一遮光条40设置于所述多条选定第一走线201远离衬底基板80的一侧；图6C示出了所述至少一个第一遮光条40设置于所述多条第一走线20远离阵列基板131的显示面的一侧的情形，其中，所述至少一个第一遮光条40设置于所述多条选定第一走线201靠近衬底基板80的一侧。
在一些实施例中，如图6B所示，所述至少一个第一遮光条40设置于所 述多条选定第一走线201靠近阵列基板131的显示面的一侧，这样，第一遮光条40的制备可以兼容于阵列基板131中的用于遮挡薄膜晶体管有源层的遮光图形的制备工序中，不必额外设置用于制备第一遮光条40的步骤，简化了阵列基板131的制备工艺。
请参见图5B，所述至少一个第一遮光条40设置于所述多条第一走线20远离或靠近阵列基板131的显示面的一侧，每个第一遮光条50在显示面上的正投影覆盖一个第一收拢部50在所述显示面上的正投影，这意味着，第一遮光条50的数量与第一收拢部50的数量相同。
本公开实施例所提供的阵列基板131中，通过将经过感应部件区C1的选定第一走线201进行分组，每组选定第一走线包括至少两条相邻的选定第一走线201，并且每组选定第一走线的各条选定第一走线201在感应部件区C1收拢形成一个第一收拢部50，相当于使每组选定第一走线的各条选定第一走线201在感应部件区C1相互靠拢，这样就使得每组选定第一走线中相邻两条选定第一走线201在感应部件区C1靠的更近，而相邻两个第一收拢部50之间离得更远，相邻两个第一收拢部50之间的间距比在非感应部件区C2的相邻两条第一走线20之间的间距更大。
并且，通过设置至少一个第一遮光条40，遮挡了第一收拢部50中至少两条相邻的选定第一走线201之间的缝隙，阻挡了光线从这些缝隙中透过，防止光线从第一收拢部50中至少两条相邻的选定第一走线201之间的缝隙透过时产生光学衍射现象。
这样，光线在透过阵列基板131的透明的感应部件区C1时，光线从相邻两个第一遮光条40之间的空间通过，由于相邻两个第一收拢部50之间的间距比在非感应部件区C2的相邻两条第一走线20之间的间距更大，也就是说，在透明的感应部件区C1，每组选定第一走线的各条选定第一走线201进行收拢后形成的多个第一收拢部50的排布密度(相当于多个第一遮挡条40的排布密度)，相对于多条第一走线20没有进行收拢时的排布密度降低，因而光线在透过透明的感应部件区C1时，衍射现象得以减轻，光的衍射对光线亮度的影响降低，从而提高了感应部件2所感应的光线信息的准确度。
以感应部件2为前置摄像头为例，由于光线在透过透明的感应部件区C1时，衍射现象得以减轻，从而前置摄像头的成像效果得以提高，所得到的图像的亮度和清晰度都有较大改善。
在一些实施例中，请再次参见图5A，在阵列基板131的透明的感应部件区C1，相邻两个第一收拢部50之间的间距a大于位于非感应部件区C2 的相邻两条第一走线之间的间距b。每个第一收拢部50中，相邻两条选定第一走线201之间的间距c小于位于非感应部件区C2的相邻两条第一走线之间的间距b。
在上述实施例中，相邻两个第一收拢部50之间的间距a大于位于非感应部件区C2的相邻两条第一走线20之间的间距b，其中，相邻两个第一收拢部50之间的间距a为分别位于相邻两个第一收拢部50中、且最靠近的两条第一走线20之间的距离，这样，相邻两个第一收拢部50之间的间距a相比位于非感应部件区C2的相邻两条第一走线20之间的间距b变大，对应地，相邻两个第一遮光条40之间的间距相比位于非感应部件区C2的相邻两条第一走线20之间的间距变大，这样在光线透过透明的感应部件区C1时，衍射现象得以减轻。
并且，每个第一收拢部50中，相邻两条选定第一走线201之间的间距c小于位于非感应部件区C2的相邻两条第一走线20之间的间距b，这样，在每个第一收拢部50中，相邻两个选定第一走线201相互靠近，使得第一收拢部50的在沿垂直于第一收拢部50的延伸方向的方向上的尺寸(即第一收拢部50的宽度)较小，保证了相邻两个第一收拢部50之间的间距能够较大，从而在减轻光的衍射现象的同时，用于遮挡第一收拢部50中至少两条相邻的选定第一走线201之间的缝隙的第一遮光条40的宽度较窄，使得更多光线可以透过。
在一些实施例中，对于各组选定第一走线中包括的选定第一走线201的条数不进行限定，各组选定第一走线可以包括两条选定第一走线201，图5A、图5B、图6A～图6C示出了这种情形；各组选定第一走线也可以包括两条以上选定第一走线201，示例性地，各组选定第一走线201所包括的选定第一走线201的条数为三条、四条、五条。
在一些实施例中，各组选定第一走线所包括的选定第一走线201的条数相同。
示例性的，各组选定第一走线所包括的选定第一走线201的条数均为两条，或者，各组选定第一走线所包括的选定第一走线201的条数均为三条或四条或其它数量。图5A示出了每组选定第一走线均包括两条选定第一走线201的情形，这样，可以使得多组选定第一走线所对应的多个第一收拢部50的宽度均相等或近似相等，第一遮光条40的宽度相等或近似相等，从而使得在感应部件区C1中的各个区域，对光线衍射的降低程度相等或近似相等，透过感应部件区C1的各个区域的光线均匀， 从而使感应部件2所感应到的光线信息的准确度更高。
在一些实施例中，每相邻两个第一收拢部50之间的间距相等；每个第一收拢部50中，每相邻两条选定第一走线201之间的间距相等。
示例性地，如图5A所示，每相邻两个第一收拢部50之间的间距均为a。在每个第一收拢部50中，当每组选定第一走线包括三条或者三条以上的选定第一走线201时，每相邻两条选定第一走线201之间的间距相等。
这样设计，由于每相邻两个第一收拢部50之间的间距相等，因此每相邻两个第一遮光条40之间的间距也相等或者近似相等；每个第一收拢部50中，每相邻两条选定第一走线201之间的间距相等，从而多个第一收拢部50的宽度均相等，多个第一遮光条40的宽度相等或近似相等，这样就使得在感应部件区C1中的各个区域，对光线衍射的降低程度相等或近似相等，透过感应部件区C1的各个区域的光线更加均匀，从而使感应部件2所感应到的光线信息的准确度更高。
在本公开的一些实施例中，通过将第一遮光条40的宽度以及相邻两个第一遮光条40之间的间距设置在合适范围内，可以进一步提高对光学衍射现象的减轻效果。
需要说明的是，如图6A所示，第一遮光条40的宽度d指，一个第一遮光条40在垂直于第一遮光条40的延伸方向的方向上的尺寸；相邻两个第一遮光条40之间的间距e指，沿垂直于第一遮光条40的延伸方向的方向上，相邻两个第一遮光条40之间的间距。示例性地，在第一遮光条40的延伸方向为第一方向的情况下，第一遮光条40的宽度d指，一个第一遮光条40在沿垂直于第一方向的方向上的尺寸；相邻两个第一遮光条40之间的间距e指，沿垂直于第一方向的方向上，相邻两个第一遮光条40之间的间距。
此外，通过对第一收拢部50的宽度、相邻两个第一收拢部50之间的间距、以及每个第一收拢部50所对应的一组选定第一走线中选定第一走线201的条数进行设置，可以实现对第一遮光条40的宽度以及相邻两个第一遮光条40之间的间距的设置。
假设相邻两个第一遮光条40之间的间距e的下限值为e1，上限值为e2。通过使相邻两个第一遮光条40之间的间距e大于或等于其下限值e1，可以避免由于相邻两个第一遮光条40之间的间距e太小，在光线从多个第一遮光条40之间的缝隙通过时，有可能出现的光学衍射现象。通过使相邻两个第一遮光条40之间的间距e小于或等于其上限值e2，可以避免由于相邻两个第一遮 光条40之间的间距e太大，导致第一遮光条40的条数较少(在感应部件区C1的面积一定的情况下，相邻两个第一遮光条40之间的间距e太大，则第一遮光条40的条数会减少)，从而与第一遮光条40相对应的第一收拢部50的个数较少；而对于阵列基板131来说，第一走线20的条数是一定的，经过感应部件区C1的选定第一走线201的条数也是一定的，这样就会使得每个第一收拢部50所对应的每组的选定第一走线201的条数较多，从而可能导致每组选定第一走线中各条选定第一走线201之间相互影响，造成所传输的信号出现波动、不准确。
此外，假设一个第一遮光条40的宽度d的下限值为d1，上限值为d2。通过使一个第一遮光条40的宽度d大于或等于其下限值d1，可以避免由于第一遮光条40的宽度d太小，可能无法有效遮挡第一收拢部50中相邻两条选定第一走线201之间的缝隙的问题。通过使一个第一遮光条40的宽度d小于或等于其上限值d2，可以避免由于第一遮光条40的宽度d太大，可能导致相邻两条第一遮光条40之间的间距e太小，从而可能出现光学衍射现象，且所通过的光线的量减少的问题。
基于此，在一些实施例中，一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e的比值大于0，且小于或等于0.5。例如，一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e的比值可以是1/2或7.5/16.125等。
示例性的，在一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e的比值大于0，且小于或等于0.5的情况下，一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e之和f大于或等于94.5μm，且小于或等于200μm。例如，一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e之和f可以是94.5μm、100μm或200μm等。
需要说明的是，一个第一遮光条40在第二方向上相对的两侧可以超出其所对应的第一收拢部50中最外侧的两条选定第一走线201所界定的边界，也可以和其所对应的第一收拢部50中最外侧的两条选定第一走线201所界定的边界对齐。
本公开的上述实施例中，通过将一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e的比值设置为大于0，且小于或等于0.5，且一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e之和大于或等于94.5μm，且小于或等于200μm，可以确保光线在透过感应部件区C1时，光学衍射现象得以进一步减轻，从而感应部件2所感应到的光线信息更加准 确。
在感应部件2为前置摄像头的情况下，本公开的发明人经试验验证得知，将一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的e的比值设为7.5/16.125，同时将一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e之和设为94.5μm，在前置摄像头获取图像时，光线所发生的衍射现象有效减轻，所拍摄得到的图像的清晰度较高。
本公开的一些实施例所提供的阵列基板131中，由于沿第一遮光条90的延伸方向，有的地方设置有薄膜晶体管，有的地方没有设置薄膜晶体管，因而在设计第一遮光条40时，在一些实施例中，沿第一遮光条40的延伸方向，第一遮光条40的宽度不相同，例如在设置有薄膜晶体管的地方，第一遮光条40的宽度较宽，在没有设置薄膜晶体管的地方，第一遮光条40的宽度较窄。这样，在第一遮光条40的宽度较窄的位置处，相邻两个第一遮光条40之间的间距增大，可以使得更多光线透过感应部件区C1被感应部件2所感应。
需要说明的是，在第一遮光条40的宽度不相同的情况下，相邻两个第一遮光条40之间的间距e指的是，在相邻两个第一遮光条40的沿垂直于第一遮光条40的延伸方向的方向上的同一位置处之间的间距。
在另一些实施例中，同一个第一遮光条40的宽度处处相同。这样，可以简化第一遮光条40的制备工艺，提高制备效率。在一些示例中，在同一个第一遮光条40的宽度处处相同的情况下，相邻两个第一遮光条40之间的间距可以相同，也可以不相同。在另一些示例中，在每个第一遮光条40的宽度处处相同的情况下，多个第一遮光条40的宽度均相同，这样在进行第一遮光条40的制备时，可以简化工艺步骤，降低工艺难度。
在多个第一遮光条40的宽度均相同的情况下，可以将每个第一收拢部50所对应的多条选定第一走线201的条数设置为相等，以及将在每组选定第一走线中相邻两个选定第一走线201之间的间距设置为相等，这样可以使每组选定第一走线中多个选定第一走线201之间的相互影响程度是相同的，从而使得感应部件区C1中多组选定第一走线201对所透过的光线的影响是相同的，提高了感应部件2所采集的光线信息的准确度。
在一些实施例中，一条第一走线20包括一条或多条第一子走线20a。示例性地，如图5A所示，一条第一走线20包括一条第一子走线20a。如图7所示，一条第一走线20包括两条第一子走线20a。在一条第一走线20包括多条第一子走线20a的情况下，所述相邻两条第一子走线20a之间相互间隔开。由于选定第一走线201为阵列基板131的多条第一走线20中经过感应部件区 C1的走线，因此前述实施例对于各选定第一走线201同样适用。
在一些实施例中，在第一方向为列方向的情况下，一条第一走线20所包括的第一子走线20a为数据线、初始化信号线、第一电源线(Vdd线)、第二电源线(Vss线)等中的至少一者。在另一些实施例中，在第一方向为行方向的情况下，一条第一走线20所包括的第一子走线20a为栅线、控制线、公共电压信号线等中的至少一者。由于选定第一走线201为阵列基板131的多条第一走线20中经过感应部件区C1的走线，因此前述实施例对于各选定第一走线201同样适用。
在一些实施例中，当一条第一走线20包括多条第一子走线20a时，该第一走线20中包括的第一子走线20a的类型可以相同，也可以不相同。例如，一条第一走线20包括两条数据线。又例如，一条第一走线20包括一条数据线和一条Vdd线。由于选定第一走线201为阵列基板的多条第一走线中经过感应部件区C1的走线，因此前述实施例对于各选定第一走线201同样适用。
在一些实施例中，一列子像素耦接一条第一走线20。在此情况下，若一个像素点10包括至少一个子像素，则一列像素点对应至少一条第一走线。例如，如图5A所示，一个像素点10包括一个子像素，则一列像素点对应一条第一走线20。又如，如图7所示，一个像素点包括两个子像素，则一列像素点对应两条第一走线20。再如，一个像素点包括三个子像素，则一列像素点对应三条第一走线20。由于选定第一走线201为阵列基板的多条第一走线中经过感应部件区C1的走线，因此前述实施例对于各选定第一走线201同样适用。
示例性的，在一列子像素耦接一条第一走线20的情况下，一个像素点10包括的子像素的个数与该像素点10耦接的第一走线20包括的数据线的条数有关。例如，若一个像素点10包括一个子像素，则该像素点10耦接的第一走线20包括一条数据线；若一个像素点10包括两个子像素，则该像素点10耦接的第一走线20包括两条数据线；若一个像素点10包括三个子像素，则该像素点10耦接的第一走线20包括三条数据线。
基于上述，请再次参见图7，在一列像素点对应至少两条第一走线20的情况下，在经过感应部件区C1的各列像素点中，可以将对应同一列像素点的各条选定第一走线201收拢于同一收拢部50中，这样可以使得感应部件区C1内的走线分布更加规律，进一步降低经过该区域的光线衍射程度。
请再次参见图4B，阵列基板还包括沿第二方向的多条第二走线30，其中，第二方向与第一方向相交叉。在感应部件区C1，沿第二方向延伸的多条第二 走线30的排布也较密集，相邻两条第二走线30之间的间距较小。尤其对于PPI很高的显示装置，第二走线30的排布密度更大。这样，光线透过感应部件区C1在显示面板13的显示面侧与感应部件2之间传输的过程中，由于相邻两条第二走线30之间的间距较小，光线在通过相邻两条第一走线30之间的间隙进行传播时，也可能会产生衍射现象，从而影响感应部件2所感应到的光线信息的准确性。
基于此，在一些实施例中，如图8A和图8B所示，本公开的一些实施例所提供的阵列基板131中，还包括沿第二方向延伸的多条第二走线30和至少一个第二遮光条60。其中，第一方向和第二方向相交叉，例如第一方向和第二方向相互垂直，又如第一方向和第二方向之间的夹角为锐角。本公开所提供的附图中，以第一方向和第二方向相互垂直作为示例。
所述多条第二走线30间隔设置，所述多条第二走线30中经过感应部件区C1的走线为选定第二走线301，所述多条选定第二走线301分为至少一组，每组选定第二走线包括至少两条相邻的选定第二走线301，每组选定第二走线的各选定第二走线301在感应部件区C1收拢形成一个第二收拢部70。
示例性的，如图8A所示，编号为T 1～T 4的第二走线为选定第二走线301。多条选定第二走线301可分为两组，每组选定第二走线包括两条相邻的选定第二走线301，每组选定第二走线所包括的两条选定第二走线301在感应部件区C1收拢形成一个第二收拢部70，则两组选定第二走线301在感应部件区C1收拢形成两个第二收拢部70。
例如，请再次参见图8A，编号为T 1和T 2的选定第二走线301作为一组选定第二走线，在感应部件区C1收拢形成一个第二收拢部70；编号为T 3和T 4的选定第二走线301作为一组选定第二走线，在感应部件区C1收拢形成一个第二收拢部70。其中，以编号为T 1和T 2的两条选定第二走线301为例，编号为T 2的选定第二走线301包括沿第二方向延伸的第一部分和沿第一方向延伸的第二部分，第一部分和第二部分依次交错设置且首尾相接，通过这种结构，使得编号为T 2的选定第二走线301在感应部件区C1向编号为T 1的选定第二走线301靠拢，形成一个第二收拢部70。可以这样理解，第二收拢部70包括编号为T 1的选定第二走线301位于感应部件区C1的部分和编号为T 2的选定第二走线301位于感应部件区C1的部分。另一个第二收拢部70的结构与前述第二收拢部70的结构类似，此处不再赘述。
如图9A～图9C所示，至少一个第二遮光条60设置于所述多条第二走线30远离或靠近阵列基板131的显示面的一侧，每个第二遮光条60在显示面(即 阵列基板131应用于显示面板中时被配置为进行显示的一面)上的正投影覆盖一个第二收拢部70在显示面上的正投影。
本公开实施例对所述至少一个第二遮光条60相对于所述多条第二走线30的位置不做限定，只要能使每个第二遮光条60在阵列基板131的显示面上的正投影覆盖一个第二收拢部70在显示面上的正投影即可，这样，一个第二遮光条60能够遮挡一个第二收拢部70中至少两条相邻的选定第二走线301之间的缝隙，避免光线从第二收拢部70中的选定第二走线301之间的缝隙透过而引起衍射。
示例性的，图9B示出了所述至少一个第二遮光条60设置于所述多条第二走线30靠近阵列基板131的显示面的一侧的情形，其中，至少一个第二遮光条60设置于所述多条第二走线30远离衬底基板80的一侧；图9C示出了所述至少一个第二遮光条60设置于所述多条第二走线30远离阵列基板131的显示面的一侧的情形，其中，至少一个第二遮光条60设置于所述多条第二走线30靠近衬底基板80的一侧。
在一些实施例中，如图9B所示，所述至少一个第二遮光条60设置于所述多条选定第一走线201靠近阵列基板131的显示面的一侧，这样，第二遮光条60的制备可以兼容于阵列基板131中的用于遮挡薄膜晶体管有源层的遮光图形的制备工序中，不必额外设置用于制备第二遮光条60的步骤，简化了阵列基板131的制备工艺。
请参见图8B，所述至少一个第二遮光条60设置于所述多条第二走线301远离或靠近阵列基板131的显示面的一侧，每个第二遮光条60在显示面上的正投影覆盖一个第二收拢部70在所述显示面上的正投影，这意味着，第二遮光条60的数量与第二收拢部70的数量相同。
本公开实施例所提供的阵列基板131中，通过将经过感应部件区C1的选定第二走线301进行分组，每组选定第二走线包括至少两条相邻的选定第二走线301，并且每组选定第二走线的各条选定第二走线301在感应部件区C1收拢形成一个第二收拢部70，相当于使每组选定第二走线的各条选定第二走线301在感应部件区相互靠拢，这样就使得每组选定第二走线中相邻两条选定第二走线301在感应部件区C1靠的更近，而相邻两个第二收拢部70之间离得更远，相邻两个第二收拢部70之间的间距比在非感应部件区C2的相邻两条第二走线30之间的间距更大。
并且，通过设置至少一个第二遮光条60，遮挡了第二收拢部70中至少两条相邻的选定第二走线301之间的缝隙，阻挡了光线从这些缝隙中透过，防 止光线从第二收拢部70中至少两条相邻的选定第二走线301之间的缝隙透过时产生光学衍射现象。
这样，光线在透过阵列基板131的透明的感应部件区C1时，光线从相邻两个第二遮光条60之间的空间通过，由于相邻两个第二收拢部70之间的间距比在非感应部件区C2的相邻两条第二走线30之间的间距更大，也就是说在透明的感应部件区C1，每组选定第二走线的各条选定第二走线301进行收拢后形成的多个第二收拢部70的排布密度(相当于多个第二遮光条60的排布密度)，相对于多条第二走线30没有进行收拢时的排布密度降低，因而光线在透过透明的感应部件区C1时，衍射现象得以进一步减轻，光的衍射对光线亮度的影响降低，从而进一步提高了感应部件2所感应的光线信息的准确度。
以感应部件2为前置摄像头为例，由于光线在透过透明的感应部件区C1时，衍射现象得以进一步减轻，从而前置摄像头的成像效果得以进一步提高，所得到的图像的亮度和清晰度都更好。
在一些实施例中，请再次参见图8A，在阵列基板131的透明的感应部件区C1，相邻两个第二收拢部70之间的间距g大于位于非感应部件区C2的相邻两条第二走线30之间的间距k。每个第二收拢部70中，相邻两条选定第二走线301之间的间距h小于位于非感应部件区C2的相邻两条第二走线30之间的间距k。
在上述实施例中，相邻两个第二收拢部70之间的间距g大于位于非感应部件区C2的相邻两条第二走线30之间的间距k，其中，相邻两个第二收拢部70之间的间距g为分别位于相邻两个第二收拢部70中、且最靠近的两条第二走线30之间的距离，这样，相邻两个第二收拢部70之间的间距g相比位于非感应部件区C2的相邻两条第二走线30之间的间距k变大，对应地，相邻两个第二遮光条60之间的间距相比位于非感应部件区C1的相邻两条第二走线30之间的间距变大，这样在光线透过透明的感应部件区C1时，衍射现象得以减轻。
并且，每个第二收拢部70中，相邻两条选定第二走线301之间的间距h小于位于非感应部件区C2的相邻两条第二走线30之间的间距k，这样在每个第二收拢部70中，相邻两个选定第二走线301相互靠近，使得第二收拢部70的在沿垂直于第二收拢部70的延伸方向的方向上的尺寸(即第二收拢部70的宽度)较小，保证了相邻两个第二收拢部70之间的间距能够较大，从而进一步减轻光的衍射现象的同时，用于遮挡第二收拢部70中至少两条相邻的 选定第二走线301之间的缝隙的第二遮光条60的宽度较窄，这样就使得更多光线可以透过。
在一些实施例中，对于各组选定第二走线中包括的选定第二走线301的个数不进行限定，各组选定第二走线可以包括两条选定第二走线301；图8A、图8B、图9A～图9C示出了这种情形；各组选定第二走线也可以包括两条以上选定第二走线301，示例性地，各组选定第二走线301所包括的选定第二走线301的条数为三条、四条、五条。
在一些实施例中，各组选定第二走线所包括的选定第二走线301的条数相同。
示例性的，各组选定第二走线301所包括的选定第二走线301的条数均为两条，或者，各组选定第二走线301所包括的选定第二走线301的条数均为三条，或四条或者其他数量。图8A中所示出了的阵列基板以每组选定第二走线301均包括两条选定第二走线301进行示意的情形，这样，可以使得多组选定第二走线301所对应的多个第二收拢部70的宽度均相等或近似相等，第二遮光条60的宽度相等或近似相等，从而使得在感应部件区C1中的各个区域，对光线衍射的降低程度相等或近似相等接近，透过感应部件区C1的各个区域的光线均匀，从而使感应部件2所感应到的光线信息的准确度更高。
在一些实施例中，每相邻两个第二收拢部70之间的间距相等；每个第二收拢部70中，每相邻两条选定第二走线之间的间距相等。
示例性地，如图8A所示，每相邻两个第二收拢部70之间的间距均为g。在每个第二收拢部70中，当每组选定第二走线包括三条或者三条以上的选定第二走线301时，每相邻两条选定第二走线301之间的间距相等。
这样设计，由于每相邻两个第二收拢部70之间的间距相等，因此每相邻两个第二遮光条60之间的间距也相等或者近似相等；每个第二收拢部70中，每相邻两条选定第二走线301之间的间距相等，从而多个第二收拢部70的宽度均相等，第二遮光条60的宽度相等或近似相等，这样就使得在感应部件区C1中的各个区域，对光线衍射的降低程度相等或近似相等，透过感应部件区C1的各个区域的光线更加均匀，从而使感应部件2所感应到的光线信息的准确度更高。
在本公开的一些实施例中，通过将一个第二遮光条60的宽度以及相邻两个第二遮光条60之间的间距设置在合适范围内，可以进一步提高对光学衍射 现象的减轻效果。
需要说明的是，如图9A所示，第二遮光条60的宽度m指，一个第二遮光条60在垂直于第二遮光条60的延伸方向的方向上的尺寸；相邻两个第二遮光条60之间的间距p指，沿垂直于第二遮光条60的延伸方向的方向上，相邻两个第二遮光条60之间的间距。示例性地，在第二遮光条60的延伸方向为第一方向的情况下，第二遮光条60的宽度d指，一个第二遮光条60沿垂直于第一方向的方向上的尺寸，相邻两个第二遮光条60之间的间距p指，沿垂直于第一方向的方向上，相邻两个第二遮光条60之间的间距。
此外，通过对第二收拢部70的宽度、相邻两个第二收拢部70之间的间距、以及每个第二收拢部70所对应的一组选定第二走线中选定第一走线301的条数进行设置，可以实现对第二遮光条60的宽度以及相邻两个第二遮光条60之间的间距的设置。
假设相邻两个第二遮光条60之间的间距p的下限值为p1，上限值为p2。
通过使相邻两个第二遮光条60之间的间距p大于或等于其下限值p1，可以避免由于相邻两个第二遮光条60之间的间距p太小，而在光线从多个第二遮光条60之间的空间通过时，有可能出现的光学衍射现象。通过使相邻两个第二遮光条60之间的间距p小于或等于其上限值p2，可以避免由于相邻两个第二遮光条60之间的间距p太大，而导致第二遮光条60的条数较少(在感应部件区C1的面积一定的情况下，相邻两个第二遮光条60之间的间距p太大，则第二遮光条60的条数会减少)，从而与第二遮光条60相对应的第二收拢部70的个数减少；而对于阵列基板131来说，第二走线30的条数是一定的，经过感应部件区C1的选定第二走线301的条数也是一定的，这样就会使得每个第二收拢部70所对应的每组的选定第二走线301的条数较多，从而可能导致每组选定第二走线中各条选定第二走线301之间相互影响，造成所传输的信号出现波动、不准确。
此外，假设一个第二遮光条60的宽度m的下限值为m1，上限值为m2。通过使一个第二遮光条60的宽度m大于或等于其下限值m1，可以避免由于第二遮光条60的宽度m太小，可能无法有效遮挡第二收拢部70中相邻两条选定第二走线301之间的缝隙的问题。通过使一个第二遮光条60的宽度m小于或等于其上限值m2，可以避免由于第二遮光条60的宽度m太大，可能导致相邻两条第二遮光条60之间的间距p太小，从而可能出现光学衍射现象，且所通过的光线的量减少问题。
基于此，在一些实施例中，一个第二遮光条60的宽度m与相邻两个第二 遮光条60之间的间距p的比值大于0，且小于或等于0.5。例如，一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p的比值可以是1/2或7.5/16.125等。
示例性的，在一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p的比值大于0，且小于或等于0.5的情况下，一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p之和(pitch)n大于或等于94.5μm，且小于或等于200μm。例如，一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p之和n可以是94.5μm、100μm或200μm等。
需要说明的是，一个第二遮光条60在第一方向上相对的两侧可以超出其所对应的第二收拢部70中最外侧的两条选定第二走线301所界定的边界，也可以和其所对应的第二收拢部70中最外侧的两条选定第二走线301所界定的边界对齐。
本公开的上述实施例中，通过将一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p的比值设置为大于0，且小于或等于0.5，且一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p之和n大于或等于94.5μm，且小于或等于200μm，可以确保光线在透过感应部件区C1时，光学衍射现象得以进一步减轻，从而感应部件2所感应到的光线信息更加准确。
在一些实施例中，一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p的比值与一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e的比值可以相等，也可以不相等；一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p之和n和一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e之和f可以相等，也可以不相等。示例性的，在阵列基板131的像素区域在第一方向上的尺寸小于在第二方向上的尺寸的情况下，一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p之和n大于一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e之和f，例如，在这种情况下，一个第二遮光条60的宽度m与相邻两个第二遮光条60之间的间距p之和n为180μm,一个第一遮光条40的宽度d与相邻两个第一遮光条40之间的间距e之和f为120μm。
本公开的一些实施例所提供的阵列基板131中，由于沿第二遮光条60的延伸方向，有的地方设置有薄膜晶体管，有的地方没有设置薄膜晶体管，因而在设计第二遮光条60时，在一些实施例中，沿第二遮光条60的延伸方向，第二遮光条60的宽度不相同，例如在设置有薄膜晶体管的地方，第二遮光条 60的宽度较宽，在没有设置薄膜晶体管的地方，第二遮光条60的宽度较窄。这样，在第二遮光条60的宽度较窄的位置处，相邻两个第二遮光条60之间的间距增大，可以使得更多光线透过感应部件区C1被感应部件2所感应。
需要说明的是，在第二遮光条60的宽度不相同的情况下，相邻两个第二遮光条60之间的间距k指的是在相邻两个第二遮光条60的沿垂直于第二遮光条60的延伸方向的方向上的同一位置处之间的间距。
在另一些实施例中，同一个第二遮光条60的宽度处处相同。这样，可以简化第二遮光条60的制备工艺，提高制备效率。在一些示例中，在同一个第二遮光条60的宽度处处相同的情况下，相邻两个第二遮光条60之间的间距可以相同，也可以不相同。例如，在每个第二遮光条60的宽度处处相同的情况下，多个第二遮光条60的宽度均相同。这样在进行第二遮光条60的制备时，可以简化工艺步骤，降低工艺难度。
在多个第二遮光条60的宽度均相同的情况下，可以将每个第二收拢部70所对应的多条选定第二走线301的条数设置为相等，以及将在每组选定第二走线中相邻两个选定第二走线301之间的间距设置为相等，这样可以使每组选定第二走线中多个选定第二走线301之间的相互影响程度是相同的，从而使得感应部件区C1中多组选定第二走线301对所透过的光线的影响是相同的，提高了感应部件2所采集的光线信息的准确度。
在一些实施例中，一条第二走线30包括一条或多条第二子走线30a。示例性地，如图8A所示，一条第二走线30包括一条第二子走线30a。如图7所示，一条第二走线30包括两条第二子走线30a。在一条第二走线30包括多条第二子走线30a的情况下，所述相邻两条第二子走线30a之间相互间隔开。由于选定第二走线301为阵列基板131的多条第二走线30中经过感应部件区C1的走线，因此前述实施例对于各选定第二走线301同样适用。
在一些实施例中，一条第二走线30包括一条或多条第二子走线30a。示例性地，如图8A所示，一条第二走线30包括一条第二子走线30a。如图7所示，一条第二走线30包括两条第二子走线30a。在一条第二走线30包括多条第二子走线30a的情况下，所述相邻两条第二子走线30a之间相互间隔开。由于选定第二走线301为阵列基板131的多条第二走线30中经过感应部件区C1的走线，因此前述实施例对于各选定第二走线301同样适用。
在一些实施例中，在第二方向为行方向的情况下，一条第二走线30所包括的第二子走线30a为栅线、控制线、公共信号线(Com线)等中的至少一者。在另一些实施例中，在第二方向为列方向的情况下，一条第二走线30所 包括的第二子走线30a为数据线、初始化信号线、第一电源线(Vdd线)、第二电源线(Vss线)等中的至少一者。由于选定第二走线301为阵列基板131的多条第二走线30中经过感应部件区C1的走线，因此前述实施例对于各选定第二走线301同样适用。
在一些实施例中，当一条第二走线30包括多条第二子走线30a时，该第二走线30中包括的第二子走线30a的类型可以相同，也可以不相同。例如，一条第二走线30包括两条栅线。又例如，一条第二走线30包括一条栅线和一条Vss线。由于选定第一走线201为阵列基板131的多条第二走线30中经过感应部件区C1的走线，因此前述实施例对于各选定第二走线301同样适用。
在一些实施例中，一条第一走线20所包括的多条第一子走线20a的条数和一条第二走线30所包括的多条第二子走线30a的条数相同。例如，一条第一走线20所包括的多条第一子走线20a的条数，和一条第二走线30所包括的多条第二子走线30a的条数均为2条。在另外一些实施例中，一条第一走线20所包括的多条第一子走线20a的条数和一条第二走线30所包括的多条第二子走线30a的条数不相同。
在一些实施例中，阵列基板131的至少一条第一遮光条40与至少一条第二遮光条60可处于同一膜层，且材料相同。这样，可以在同一道制备工艺下形成所述至少一条第一遮光条40和所述至少一条第二遮光条60，从而简化制备工艺，节省工艺步骤。进一步的，所述至少一条第一遮光条40和所述至少一条第二遮光条60可以与阵列基板131中用于遮挡薄膜晶体管有源层的遮光图形同层形成，这样所述至少一条第一遮光条40和所述至少一条第二遮光条60的制备便可兼容于该遮光图形的制备工序中，从而无需额外设置用于制备所述至少一条第一遮光条40和所述至少一条第二遮光条60的工序，进一步简化了阵列基板的制备工艺。
在本公开实施例中，对所述至少一个第一遮光条40和所述至少一个第二遮光条60的材料不做限定，只要能够起到遮光的作用即可。示例性的，所述至少一个第一遮光条40和所述至少一个第二遮光层60的材料均为黑色油墨、黑色树脂或金属等不透光材料中的一种。在所述至少一个第一遮光条40的材料为导电材料例如金属的情况下，所述至少一个第一遮光条40和阵列基板131的多条选定第一走线201之间设置有绝缘层，以避免二者电性连通；在所述至少一个第二遮光条60的材料为导电材料例如金属的情况下，所述至少一个第二遮光条60和所述多条选定第二走线301之间设置有绝缘层，以避免二者电性连通。
如图3A和图3B所示，本公开的一些实施例提供了一种显示面板13，该显示面板包括如上述任一实施例所述的阵列基板131。
本公开实施例所提供的显示面板13可以是液晶显示面板(Liquid Crystal Display，简称LCD)；也可以是有机电致发光显示面板(Organic Light-Emitting Display，简称OLED)；当然还可以是量子点电致发光显示面板(Quantum Dot Light-Emitting Display，简称QLED)。
当显示面板13为液晶显示面板时，显示面板13包括阵列基板131、彩膜基板以及设置在彩膜基板、阵列基板131之间的液晶层。
当显示面板13为有机电致发光显示面板或量子点电致发光显示面板时，显示面板13包括阵列基板131和用于封装阵列基板131的封装层。阵列基板131包括薄膜晶体管和发光器件，发光器件包括阳极、发光层和阴极。封装层可以是薄膜封装层，也可以是基板封装层。
如图4A所示，本公开实施例所提供的显示面板13具有感应部件区C1和非感应部件区C2。非感应部件区C2具有显示功能，感应部件区C1透明且具有显示功能。有上述各实施例可知，由于在显示面板13的阵列基板131的感应部件区C1，经过感应部件区C1的第一走线20(或者第一走线20和第二走线30)进行收拢设计，使得相邻两个第一收拢部50(或者相邻两个第一收拢部50和相邻两个第二收拢部70)之间的间距变大，从而光线透过感应部件区C1时，光的衍射现象减轻，使得感应部件2所感应的光线信息的准确度提高。
请继续参见图4A，在一些实施例中，显示面板13还可具有非显示区D，该非显示区D例如可为边框。
如图3A和图3B所示，本公开的一些实施例提供了一种显示装置300，该显示装置300包括：显示面板13和至少一个感应部件2。其中，显示面板13为上述实施例所提供的显示面板13。
所述至少一个感应部件2设置于显示面板13的非显示面侧，且所述至少一个感应部件2在显示面板13上的正投影处于显示面板13的感应部件区C1内。另外，每个感应部件2的感应面朝向显示面板13的显示面侧。示例性地，所述至少一个感应部件2包括前置摄像头、光传感器、3D感测模块等中的一个或多个。
例如，在感应部件2包括前置摄像头的情况下，前置摄像头的感光面朝向显示面板13的显示面侧，以透过显示面板13的感应部件区C1拍摄位于显示装置300的正面(即显示面侧)的待拍摄物体的图像。在感应部件2包括 光传感器的情况下，光传感器的感光面朝向显示面板13的显示面侧，以透过显示面板13的感应部件区C1感应来自显示装置300的正面(即显示面侧)的光线。在感应部件2包括3D感测模块的情况下，3D感测模块的出光面和感光面朝向显示面板13的显示面侧，以透过显示面板13的感应部件区C1将光线出射至位于显示装置300的正面(即显示面侧)的物体上，并接收被物体反射回的光线，实现对物体3维空间结构的感测。
上述显示装置300中，光线透过显示面板13的感应部件区C1时无衍射或者衍射程度较轻，从而提高了所述至少一个感应部件2所感应的光线信息的准确度。例如，在所述至少一个感应部件2包括前置摄像头的情况下，拍摄得到的图像亮度较高，清晰度较好。
上述显示装置300中，诸如前置摄像头等的感应部件2所正对的区域，即感应部件区C1具有较高的透光率，且光学衍射较小，因此该显示装置300应用于手机、平板等终端中时，能够极大地提高终端屏幕的屏占比，实现全面屏显示，且感应部件2的感光效果不受光线衍射影响或者所受光线衍射影响程度很轻微。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (17)

  1. 一种阵列基板，所述阵列基板具有非感应部件区和透明的感应部件区；所述阵列基板包括：
    沿第一方向延伸的多条第一走线，所述多条第一走线中经过所述感应部件区的走线为选定第一走线；多条所述选定第一走线分为至少一组，每组包括至少两条相邻的选定第一走线，每组的各条选定第一走线在所述感应部件区收拢形成一个第一收拢部；
    至少一个第一遮光条，设置于所述多条第一走线远离或靠近所述阵列基板的显示面的一侧，每个所述第一遮光条在所述显示面上的正投影覆盖一个所述第一收拢部在所述显示面上的正投影。
  2. 根据权利要求1所述的阵列基板，其中，相邻两个所述第一收拢部之间的间距大于位于所述非感应部件区的相邻两条第一走线之间的间距；
    每个所述第一收拢部中，相邻两条选定第一走线之间的间距小于位于所述非感应部件区的相邻两条第一走线之间的间距。
  3. 根据权利要求1或2所述的阵列基板，其中，各组选定第一走线所包括的所述选定第一走线的条数相同。
  4. 根据权利要求1或2所述的阵列基板，其中，每相邻两个所述第一收拢部之间的间距相等；
    每个所述第一收拢部中，每相邻两条选定第一走线之间的间距相等。
  5. 根据权利要求1～4中任一项所述的阵列基板，其中，一个所述第一遮光条的宽度与相邻两个所述第一遮光条之间的间距的比值大于0，且小于或等于0.5。
  6. 根据权利要求5所述的阵列基板，其中，一个所述第一遮光条的宽度与相邻两个所述第一遮光条之间的间距之和大于或等于94.5μm，且小于或等于200μm。
  7. 根据权利要求1～6中任一项所述的阵列基板，其中，所述第一走线包括一条或多条第一子走线。
  8. 根据权利要求1～7中任一项所述的阵列基板，还包括：
    沿第二方向延伸的多条第二走线；所述第一方向和所述第二方向相交叉；其中，所述多条第二走线中经过所述感应部件区的走线为选定第二走线，多条所述选定第二走线分为至少一组，每组包括至少两条相邻的选定第二走线，每组的各选定第二走线在所述感应部件区呈收拢趋势形成一个第二收拢部；
    至少一个第二遮光条，设置于所述多条第二走线远离或靠近所述阵列基 板的显示面的一侧，每个所述第二遮光条在所述显示面上的正投影覆盖一个所述第二收拢部在所述显示面上的正投影。
  9. 根据权利要求8所述的阵列基板，其中，相邻两个所述第二收拢部之间的间距大于位于所述非感应部件区的相邻两条第二走线之间的间距；
    每个所述第二收拢部中，相邻两条选定第二走线之间的间距小于位于所述非感应部件区的相邻两条第二走线之间的间距。
  10. 根据权利要求8或9所述的阵列基板，其中，各组选定第二走线所包括的所述选定第二走线的条数相同。
  11. 根据权利要求8或9所述的阵列基板，其中，每相邻两个所述第二收拢部之间的间距相等；
    每个所述第二收拢部中，每相邻两条选定第二走线之间的间距相等。
  12. 根据权利要求8～11中任一所述的阵列基板，其中，一个所述第二遮光条的宽度与相邻两个所述第二遮光条之间的间距的比值大于0，且小于或等于0.5。
  13. 根据权利要求12所述的阵列基板，其中，一个所述第二遮光条的宽度与相邻两个所述第二遮光条之间的间距之和大于或等于94.5μm，且小于或等于200μm。
  14. 根据权利要求8～13中任一项所述的阵列基板，其中，所述第一遮光条与所述第二遮光条处于同一膜层，且材料相同。
  15. 根据权利要求8～14中任一项所述的阵列基板，其中，所述第二走线包括一条或多条第二子走线。
  16. 一种显示面板，包括：如权利要求1～15中任一项所述的阵列基板。
  17. 一种显示装置，包括：
    如权利要求16所述的显示面板；
    设置于所述显示面板的非显示面侧的至少一个感应部件，所述至少一个感应部件在所述阵列基板上的正投影处于所述阵列基板的感应部件区内，且每个所述感应部件的感应面朝向所述阵列基板的显示面侧。
PCT/CN2019/110371 2018-10-11 2019-10-10 阵列基板、显示面板及显示装置 Ceased WO2020073954A1 (zh)

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