WO2020132801A1 - Dispositif électronique et son procédé de fabrication - Google Patents

Dispositif électronique et son procédé de fabrication Download PDF

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Publication number
WO2020132801A1
WO2020132801A1 PCT/CN2018/123097 CN2018123097W WO2020132801A1 WO 2020132801 A1 WO2020132801 A1 WO 2020132801A1 CN 2018123097 W CN2018123097 W CN 2018123097W WO 2020132801 A1 WO2020132801 A1 WO 2020132801A1
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WIPO (PCT)
Prior art keywords
elastic layer
electronic device
rigid substrate
functional units
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/123097
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English (en)
Chinese (zh)
Inventor
袁泽
康佳昊
魏鹏
管曦萌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Royole Technologies Co Ltd
Original Assignee
Shenzhen Royole Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Royole Technologies Co Ltd filed Critical Shenzhen Royole Technologies Co Ltd
Priority to PCT/CN2018/123097 priority Critical patent/WO2020132801A1/fr
Priority to CN201880097629.9A priority patent/CN113169076A/zh
Publication of WO2020132801A1 publication Critical patent/WO2020132801A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes

Definitions

  • the invention relates to the field of electronic technology, in particular to an electronic device and a manufacturing method thereof.
  • the manufacturing method of the existing electronic device is to form a patterned wire on an elastic substrate, and then fix the chip on the substrate by transferring a stamp to connect with the wire.
  • this manufacturing method is incompatible with existing manufacturing technologies such as semiconductors and display panels, resulting in low production efficiency.
  • the present invention provides an electronic device with high production efficiency and a manufacturing method thereof.
  • the present invention provides a method for manufacturing an electronic device, which includes the following steps:
  • An electronic device to be peeled is provided on the rigid substrate, the electronic device includes a plurality of functional units arranged at intervals and an elastic layer covering the plurality of functional units;
  • a mold release process is performed to separate several functional units from the rigid substrate together with the elastic layer.
  • the present invention provides an electronic device manufactured by the above-described method of manufacturing an electronic device.
  • the electronic device includes a plurality of functional units arranged at intervals and an elastic layer covering the functional units.
  • an electronic device to be peeled is provided on the rigid substrate, the electronic device includes a plurality of functional units arranged at intervals and an elastic layer covering the functional units; Processing to separate several functional units from the rigid substrate together with the elastic layer. Since the electronic device of the present invention is compatible with existing semiconductor, display panel and other manufacturing technologies, the production efficiency is improved.
  • FIG. 1 is a flowchart of a method for manufacturing an electronic device provided by the first embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the manufacturing process of the electronic device provided by the first embodiment of the present invention.
  • FIG. 3 is a flowchart of a method for manufacturing an electronic device provided by a second embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the manufacturing process of the electronic device provided by the second embodiment of the present invention.
  • FIG. 5 is a flowchart of a method for manufacturing an electronic device provided by a third embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the manufacturing process of the electronic device provided by the third embodiment of the present invention.
  • FIG. 7 is a flowchart of a method for manufacturing an electronic device provided by a fourth embodiment of the present invention.
  • FIG. 8 is a schematic diagram of the manufacturing process of the electronic device provided by the fourth embodiment of the present invention.
  • FIG. 9 is a flowchart of a method for manufacturing an electronic device provided by a fifth embodiment of the present invention.
  • FIG. 10 is a schematic diagram of the manufacturing process of the electronic device provided by the fifth embodiment of the present invention.
  • FIG. 1 is a flowchart of a method for manufacturing an electronic device according to an embodiment of the present invention.
  • FIG. 2 is a process for manufacturing an electronic device according to an embodiment of the present invention. Schematic diagram of the process.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • step S101 a rigid substrate is provided.
  • the rigid substrate 10 may be, but not limited to, a glass substrate, a metal substrate, or a ceramic substrate.
  • the rigid substrate 10 is a thin glass substrate, so as to facilitate the rapid separation of the electronic device 1 from the rigid substrate 10 after fabrication.
  • the glass substrate is, for example, but not limited to soda lime glass, alkali-free glass, phosphate-based glass, or quartz.
  • the rigid substrate 10 is used to support the electronic device 1 during the manufacturing process of the electronic device 1.
  • the rigid substrate 10 is made of a transparent material, so that the laser can irradiate the electronic device 1 through the rigid substrate 10, so that the electronic device 1 is peeled off from the rigid substrate 10.
  • step S103 an electronic device to be peeled is provided on the rigid substrate.
  • the electronic device 1 includes a plurality of functional units 20 arranged at intervals and an elastic layer 30 covering the functional units 20.
  • the functional unit 20 is, for example, but not limited to, a flexible display unit, a microchip, a touch sensor, and other functional elements.
  • each of the functional units 20 includes a base 21 and a functional device 22, and a space 201 is formed between two adjacent bases 21 and the rigid substrate 10.
  • the substrate 21 and the functional device 22 are stacked.
  • each functional unit 20 includes only the functional device 22, that is, the substrate 21 may be omitted.
  • setting the electronic device 1 to be peeled off on the rigid substrate 10 specifically includes:
  • the elastic layer 30 is covered on the side of the functional unit 20 facing away from the rigid substrate 10 to manufacture the electronic device 1 to be peeled off.
  • the arrangement of a number of functional units 20 arranged at intervals on the rigid substrate 10 specifically includes:
  • a plurality of spaced-apart bases 21 and functional devices 22 are sequentially arranged on the rigid substrate 10 to obtain a plurality of the functional units 20;
  • a base layer (not shown) and a number of functional devices 22 arranged at intervals are sequentially arranged on the rigid substrate 10;
  • the base layer is patterned to produce several functional units 20.
  • the existing patterning process may be used to pattern the base layer.
  • the base layer is lithographically and etched using a plurality of the functional devices 22 as a mask or a separate mask that is stacked on the functional device 22.
  • a layer of photoresist is coated on several of the functional devices 22. In this way, the action light is projected on the reticle, and the photoresist is exposed, developed, etc., so that the substrate layers exposed on the opposite sides of the photoresist are etched to obtain the substrates arranged at intervals 21, that is, a plurality of the functional units 20 arranged at intervals on the rigid substrate 10.
  • the substrate 21 is made of transparent material.
  • the substrate 21 may be a flexible substrate or a rigid substrate.
  • the substrate 21 is, for example, but not limited to, a polyimide (PI) substrate, a colorless transparent polyimide (CPI) substrate, and polyethylene terephthalate (PET) Substrate, polyamide (PA) substrate, polycarbonate (PC) substrate, polyethersulfone (PES) substrate, polyethylene naphthalate (PEN) substrate, polyethylene One of polymethylmethacrylate (PMMA) substrate, cycloolefin copolymer (COC) substrate, cycloolefin polymer (COP) substrate, glass substrate and silicon substrate.
  • PI polyimide
  • CPI colorless transparent polyimide
  • PET polyethylene terephthalate
  • PA polyamide
  • PC polycarbonate
  • PES polyethersulfone
  • PEN polyethylene naphthalate
  • PMMA polymethylmethacrylate
  • COC cycloolefin
  • the functional device 22 includes, but is not limited to a microchip and a communication bus.
  • the microchip is an electronic device with a specific function.
  • the microchip is, for example, but not limited to an electronic device having a processing function, a storage function, a calculation function, a display function, a sensing function, or a communication function.
  • the microchips include but are not limited to: circuits directly fabricated on the substrate 21, packaged microchips transferred onto the substrate 21, and unpackaged microchips transferred onto the substrate 21.
  • the communication bus is used to realize the communication connection between these electronic devices.
  • the electronic device 1 is a display panel.
  • the display panel is, for example, but not limited to, a liquid crystal display (Liquid Crystal Display, LCD) panel, a quantum dot display (Quantum Dot Light Emitting Diodes, QLED) panel, an electronic paper (E-paper Display, EPD), and a touch screen (Touch panel), flexible solar cell (Page, View, PV) panel, radio frequency tag (Radio Frequency Identification, RFID) and other products or components with specific functions.
  • LCD liquid crystal display
  • QLED Quantum Dot Light Emitting Diodes
  • EPD electronic paper
  • Touch panel touch screen
  • flexible solar cell (Page, View, PV) panel radio frequency tag (Radio Frequency Identification, RFID) and other products or components with specific functions.
  • the elastic coefficient of the substrate 21 is lower than that of the elastic layer 30, so that when the electronic device 1 is in a deformed state, such as stretching or bending, the substrate 21 can be used to support and protect the functional device 22. Since the elastic layer 30 fills the space 201 between the substrate 21 and covers the substrate 21 and the functional device 22, the deformation of the electronic device 1 is more flexible, and the electronic device 1 is protected. It can be understood that the width of the space 201 can be designed according to the size required for the patterning process of the functional device 22 and the density of the functional device 22.
  • the elastic layer 30 contains an elastomer.
  • the elastomer is preferably a material whose internal polymer chain or lattice structure can be stretched under the action of external force.
  • the elastomer is, for example, but not limited to one of natural rubber, synthetic rubber, thermoplastic elastomer, or a combination thereof.
  • the natural rubber is, for example, polyisoprene.
  • the synthetic rubber includes, but is not limited to styrene-butadiene rubber, butadiene rubber, neoprene rubber, nitrile rubber, butyl rubber, or silicone rubber.
  • the silica gel is, for example, polydimethylsiloxane (PDMS).
  • thermoplastic elastomer includes, but is not limited to, styrene block copolymer, thermoplastic olefin, thermoplastic vulcanizate, thermoplastic polyurethane, thermoplastic copolyester, or thermoplastic polyamide.
  • the elastic layer is further doped with a laser absorber.
  • the laser absorber is, for example, but not limited to one of salicylates, benzophenones, benzotriazoles, substituted acrylonitriles, triazines, or a combination thereof.
  • the side of the functional unit 20 facing away from the rigid substrate 10 is covered with an elastic layer 30 to manufacture the electronic device 1 to be peeled off, which specifically includes:
  • the side of the functional unit 20 facing away from the rigid substrate 10 is covered with an elastic layer 30 to manufacture the electronic device 1 to be peeled off, which specifically includes:
  • the solid-state elastic layer 30 containing an elastomer and a laser absorber is prepared in advance;
  • the elastic layer 30 and the rigid substrate 10 and the functional unit 20 are laminated, pressurized/heated and bonded, so that the elastic layer 30 is attached to the rigid substrate 10 and covered
  • the substrate 21 and the functional device 22 are used to manufacture the electronic device 1 to be stripped.
  • the side of the functional unit 20 facing away from the rigid substrate 10 is covered with an elastic layer 30 to manufacture the electronic device 1 to be peeled off, which specifically includes:
  • An elastic layer 30 including an elastomer and a laser absorber is deposited on the rigid substrate 10 and the plurality of functional units 20, so that the elastic layer 30 is formed on the rigid substrate 10 and covers the The substrate 21 and the functional device 22 to manufacture the electronic device 1 to be peeled off.
  • the deposition process includes, but is not limited to, chemical vapor deposition, pulsed laser deposition, and atomic layer deposition.
  • step S105 a release process is performed to separate several functional units from the rigid substrate together with the elastic layer.
  • a mold release process is performed to separate several functional units 20 and the elastic layer 30 from the rigid substrate 10, specifically including:
  • Laser ablation of the elastic layer 30 and the base 21 is used to separate several functional units 20 from the rigid substrate 10 together with the elastic layer 30.
  • the electronic device 1 is separated from the rigid substrate 10, and the back surface of the rigid substrate 10 can be irradiated with laser scanning.
  • the rigid substrate 10 has light permeability, laser light is irradiated on the base 21 and the elastic layer 30 between the rigid substrate 10 and the electronic device 1.
  • the elastic layer 30 is doped with a laser absorber, the elastic layer 30 can absorb laser light of a specific wavelength, so the absorption rate of the laser by the elastic layer 30 is greatly improved to separate the elastic layer 30 from the rigid substrate 10.
  • the laser can be scanned from one end of the rigid substrate 10 to the other end, so that the rigid substrate 10 is detached from the base 21 and the elastic layer 30 and peeled off.
  • the laser may be a gas laser or a solid-state laser.
  • the solid-state laser is, for example, a semiconductor laser.
  • the gas laser is, for example, but not limited to, excimer laser, Nd-YAG laser, Ar laser, CO 2 laser, He-Ne laser, or the like.
  • the laser absorption rate of the substrate 21 is substantially the same as the laser absorption rate of the elastic layer 30.
  • the substrate 21 and the elastic layer 30 are simultaneously ablated by a laser, and the ablated substrate 21 and the elastic layer 30 are located on the same plane on the side near the ablated surface Therefore, the ablated substrate 21 and the elastic layer 30 together constitute the electronic device 1.
  • the thickness of the substrate 21 and the thickness of the elastic layer 30 are both greater than the depth of laser ablation.
  • FIG. 3 shows a flowchart of a method for manufacturing an electronic device according to a second embodiment of the present invention
  • FIG. 4 shows a method for manufacturing an electronic device according to a second embodiment of the present invention.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • Step S301 providing a rigid substrate.
  • Step S303 a plurality of functional units arranged at intervals are arranged on the rigid substrate.
  • Step S305 a first elastic layer is formed on the rigid substrate, and the first elastic layer is wrapped around the functional units.
  • the elastic layer 30 includes the first elastic layer 31.
  • the first elastic layer 31 contains the elastic body and the laser absorber, so that the first elastic layer 31 can absorb laser light of a specific wavelength.
  • the method for forming the first elastic layer 31 on the rigid substrate 10 includes coating, stacking, and deposition processes. For details, refer to the method for forming the elastic layer 30 in the first embodiment, and details are not described herein. .
  • Step S307 forming a second elastic layer on the first elastic layer.
  • the elastic layer 30 further includes a second elastic layer 32.
  • the second elastic layer 32 contains the elastic body. It can be understood that the method for forming the second elastic layer 32 on the first elastic layer 31 includes coating, laminating, and deposition processes. For details, refer to the method for forming the elastic layer 30 in the first embodiment. No longer. The difference is that the second elastic layer 32 is not doped with a laser absorber.
  • the laser absorption rate of the second elastic layer 32 is smaller than the laser absorption rate of the first elastic layer 31. It can be understood that the laser absorption rate of the first elastic layer 31 is substantially the same as the laser absorption rate of the substrate 21, and the laser absorption rate of the second elastic layer 32 is smaller than the laser absorption rate of the substrate 21. In this way, when the laser scanning irradiates the elastic layer 30, the first elastic layer 31 and the substrate 21 are simultaneously laser ablated by a thin layer, so that the ablated first elastic layer 31 and the second elastic layer covering the substrate 21
  • the layer 32 and the functional unit 20 together constitute the electronic device 1.
  • the thickness of the first elastic layer 31 is less than or equal to the depth of laser ablation, and the thickness of the first elastic layer 31 is less than the thickness of the substrate 21.
  • Step S309 a release process is performed to separate the functional unit from the rigid substrate together with the first elastic layer and the second elastic layer covering the functional unit.
  • a release process is performed to separate the functional unit 20 from the rigid substrate 10 together with the first elastic layer 31 and the second elastic layer 32 covering the functional unit 20. This includes:
  • FIG. 5 shows a flowchart of a method for manufacturing an electronic device according to a third embodiment of the present invention.
  • FIG. 6 shows a method for manufacturing an electronic device according to a third embodiment of the present invention. Schematic diagram of the manufacturing process of the device.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • Step S501 providing a rigid substrate.
  • Step S503 a plurality of functional units arranged at intervals are arranged on the rigid substrate.
  • Step S505 a sacrificial layer is formed on the rigid substrate, and the sacrificial layer is coated on the functional units.
  • the method of forming the sacrificial layer 40 on the rigid substrate 10 includes coating, stacking, and deposition processes.
  • the sacrificial layer 40 contains a laser absorbing material so that the sacrificial layer 40 can absorb laser light of a specific wavelength.
  • the formation of the sacrificial layer 40 on the rigid substrate 10 may also be a lamination of the sacrificial layer 40 on the rigid substrate 10.
  • the sacrificial layer 40 is made of transparent material.
  • the sacrificial layer 40 is, for example, but not limited to PI substrate, CPI substrate, PE substrate, PA substrate, PC substrate, PES substrate, PEN substrate, PMMA substrate, COC substrate, COP substrate, indium tin oxide (ITO) , Metal and other inorganic materials.
  • the materials of the sacrificial layer 40 and the substrate 21 are the same, and both are PI substrates.
  • Step S507 forming an elastic layer on the sacrificial layer.
  • the sacrificial layer 40 is disposed between the rigid substrate 10 and the elastic layer 33. It can be understood that the method for forming the elastic layer 33 on the sacrificial layer 40 includes coating, stacking, and deposition processes.
  • the elastic layer 33 is not doped with a laser absorber, and the elastic body in the elastic layer 33 may be selected from materials with a low adhesion coefficient.
  • the laser absorption rate of the elastic layer 33 is smaller than the laser absorption rate of the sacrificial layer 40. It can be understood that the laser absorption rate of the sacrificial layer 40 is substantially the same as the laser absorption rate of the substrate 21, and the laser absorption rate of the elastic layer 33 is smaller than the laser absorption rate of the substrate 21.
  • the sacrificial layer 40 when the sacrificial layer 40 is irradiated by laser scanning, the sacrificial layer 40 and the substrate 21 are simultaneously ablated by a laser, so that the ablated sacrificial layer 40, the elastic layer 33 and the functional unit 20 together constitute the electronic device 1.
  • the thickness of the sacrificial layer 40 is less than or equal to the depth of laser ablation, and the thickness of the sacrificial layer 40 is less than the thickness of the substrate 21.
  • step S509 a release process is performed to separate the functional unit from the rigid substrate together with the sacrificial layer and the elastic layer covering the functional unit.
  • a release process is performed to separate the functional unit 20 from the rigid substrate 10 together with the sacrificial layer 40 and the elastic layer 33 covering the functional unit 20, specifically including:
  • the sacrificial layer 40 and the substrate 21 are ablated by laser to separate the functional unit 20 from the rigid substrate 10 together with the sacrificial layer 40 and the elastic layer 33 covering the functional unit 20.
  • FIG. 7 shows a flowchart of a method for manufacturing an electronic device according to a fourth embodiment of the present invention.
  • FIG. 8 shows a method for manufacturing an electronic device according to a fourth embodiment of the present invention. Schematic diagram of the manufacturing process of the device.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • step S701 a rigid substrate is provided.
  • Step S703 a sacrificial layer is formed on the rigid substrate.
  • the method for forming the sacrificial layer 41 on the rigid substrate 10 includes coating, stacking, and deposition processes.
  • the sacrificial layer 41 includes a laser absorbing material, and the material selection of the sacrificial layer 41 can refer to the sacrificial layer 40 described in the third embodiment.
  • the sacrificial layer 41 and the rigid substrate 10 are stacked.
  • Step S705 forming several functional units arranged at intervals on the sacrificial layer.
  • forming the functional units 20 arranged on the sacrificial layer 41 at intervals includes:
  • a plurality of spaced-apart substrates 21 and functional devices 22 are sequentially arranged on the sacrificial layer 41 to obtain a plurality of functional units 20; or
  • a base layer and a plurality of functional devices 32 arranged at intervals are sequentially formed on the sacrificial layer 41;
  • the base layer is patterned to produce several functional units 20.
  • a plurality of the substrates 21 are arranged on the sacrificial layer 41 at intervals, and a functional device 22 is provided on each side of the substrate 21 away from the sacrificial layer 41, so that the sacrificial layer 41 ⁇ 20 ⁇
  • the function unit 20 is formed.
  • the substrate 21 and the functional device 22 are stacked.
  • the functional unit 20 only includes several functional devices 22 arranged at intervals, that is, the substrate 21 may be omitted.
  • the sacrificial layer 41 and the base 21 are sequentially formed on the rigid substrate 10 through different processes.
  • the sacrificial layer 41 and the substrate 21 may be integrally formed. That is, the base 21 is formed on the rigid substrate 10, and the base 21 is patterned to form the base 21 and the sacrificial layer 41 having different thicknesses. The thickness of the substrate 21 is greater than the thickness of the sacrificial layer 41.
  • Step S707 an elastic layer is formed on the sacrificial layer, and the elastic layer is wrapped around the several functional units.
  • the elastic layer 33 is not doped with a laser absorber, and the elastic body in the elastic layer 33 may be selected from materials with a low adhesion coefficient.
  • the laser absorption rate of the elastic layer 33 is smaller than the laser absorption rate of the sacrificial layer 41. It can be understood that the laser absorption rate of the sacrificial layer 41 is greater than the laser absorption rate of the elastic layer 33.
  • the sacrificial layer 41 is ablated by the laser. After the sacrificial layer 41 is ablated, the elastic layer 33 and the functional unit 20 together constitute the electronic device 1.
  • step S709 a release process is performed to separate a plurality of the functional units from the rigid substrate together with the elastic layer.
  • a release process is performed to separate a plurality of the functional units 20 and the elastic layer 33 from the rigid substrate 10, specifically including:
  • the sacrificial layer 41 is ablated by laser to separate the functional units 20 and the elastic layer 33 from the rigid substrate 10.
  • the rigid substrate 10 is made of a transparent material, so that the laser can illuminate the electronic device 1 through the rigid substrate 10, so that the electronic device 1 is peeled from the rigid substrate 10. It can be understood that the electronic device 1 is separated from the rigid substrate 10, and the back of the rigid substrate 10 can be irradiated with laser scanning. Since the rigid substrate 10 has light permeability, laser light is irradiated on the sacrificial layer 41. Further, in order to improve the absorption rate of the sacrificial layer 41 to the laser and separate the sacrificial layer 41 from the rigid substrate 10, a laser absorber may be doped into the sacrificial layer 41.
  • the laser can be scanned from one end of the rigid substrate 10 to the other end, so that the functional unit 20 is detached from the rigid substrate 10 and peeled off.
  • the laser may be a gas laser or a solid-state laser.
  • the solid-state laser is, for example, a semiconductor laser.
  • the gas laser is, for example, but not limited to, excimer laser, Nd-YAG laser, Ar laser, CO 2 laser, He-Ne laser, or the like.
  • the laser absorber is, for example, but not limited to one of salicylates, benzophenones, benzotriazoles, substituted acrylonitriles, triazines, or a combination thereof.
  • a release process is performed to separate several functional units 20 and the elastic layer 33 from the rigid substrate 10, specifically including:
  • the sacrificial layer 41 is dissolved by a dissolving agent, so that the functional units 20 and the elastic layer 33 are separated from the rigid substrate 10 together.
  • the sacrificial layer 41 includes, but is not limited to, one of inorganic salt compounds, inorganic oxides, organic polymer compounds, and metals, or a combination thereof.
  • the dissolving agent is a liquid. In other embodiments, the dissolving agent may also be gas or light, such as laser.
  • the dissolving agent includes, but is not limited to, at least one of water, acid, alkali, organic solution, developer, or a combination thereof.
  • the inorganic salt compounds are selected from materials that are easily tolerated by water, such as potassium, sodium, ammonium, nitrate, acetate, etc.; the inorganic oxides are selected from those that are easily soluble in acid or alkali Materials, such as alkaline oxides, acidic oxides, or amphoteric oxides; the organic polymer compound is selected from materials that are easily soluble in water, organic solvents, or developers, such as epoxy resin; Used in acid or alkali metal materials, such as aluminum and potassium.
  • FIG. 9 shows a flowchart of a method for manufacturing an electronic device according to a fifth embodiment of the present invention.
  • FIG. 10 shows a method for manufacturing an electronic device according to a fifth embodiment of the present invention. Schematic diagram of the manufacturing process of the device.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • Step S901 a rigid substrate is provided.
  • Step S903 a number of functional units arranged at intervals are arranged on the rigid substrate.
  • step S905 an elastic layer is formed on the rigid substrate, and the elastic layer is wrapped around the functional units.
  • the elastic layer 34 is not doped with a laser absorber, and the elastic layer 34 is made of a material with a low adhesion coefficient.
  • Step S907 a release process is performed to separate the functional unit and the elastic layer from the rigid substrate.
  • the preset area 100 includes a first area 101 and a second area 102. It can be understood that, in the embodiment of the invention, the first region 101 is a region where the base 21 is in contact with the rigid substrate 10. The second region 102 is a region where the elastic layer 34 is in contact with the rigid substrate 10.
  • a release process is performed to separate the functional unit 20 and the elastic layer 34 from the rigid substrate 10, which specifically includes:
  • the substrate 21 is located in the first area 101.
  • the adhesive force between the elastic layer 34 and the rigid substrate 10 is smaller than the adhesive force between the functional unit 20 and the rigid substrate 10, that is, the elastic layer 34 uses an elastomer having a low adsorption force, such as PDMS.
  • the laser scans and irradiates only the area where the base 21 contacts the rigid substrate 10, and applies mechanical external force on the elastic layer 34 to peel off the ablated base 21 and the elastic layer 34 from the rigid substrate 10 together, thereby The ablated substrate 21 and the elastic layer 30 together constitute the electronic device 1. Since the laser only ablate the substrate 21, the ablated substrate 21 and the elastic layer 34 are located on different planes on the side close to the ablated surface.
  • a release process is performed to separate the functional unit 20 and the elastic layer 34 from the rigid substrate 10, specifically including:
  • the elastic layer 34 may be doped with a laser absorber, and the elastic body in the elastic layer 34 may be selected from materials with a higher adhesion coefficient.
  • the side surface of the base 21 contacting the rigid substrate 10 is a non-stick surface.
  • the adhesion of the base 21 to the rigid substrate 10 is low, that is, a material with a low adhesion coefficient may be used for the base 21.
  • the elastic layer 34 has stronger adhesion to the functional unit 20 than the rigid substrate 10 during the process of absorbing the laser light and raising the temperature, and the elastic layer 34 The rigid substrate 10 maintains very low adhesion or no adhesion, so that the functional unit 20 and the elastic layer 34 are separated from the rigid substrate 10 together.
  • the predetermined area 100 of the electronic device 1 is ablated by laser to separate the functional unit 20 and the elastic layer 34 from the rigid substrate 10, and specifically includes:
  • the first region 101 (that is, the base 21) is ablated using a first laser
  • the second region 102 (that is, the elastic layer 34 in contact with the rigid substrate 10 is irradiated with a second laser scan ), so that several functional units 20 are separated from the rigid substrate 10 together with the elastic layer 34.
  • the characteristic parameters of the first laser are different from the characteristic parameters of the second laser, and the characteristic parameters are, for example, but not limited to the energy density, wavelength, and number of scans of the laser. It can be understood that in an embodiment, the first laser and the second laser may simultaneously scan and illuminate the elastic layer 34 and the substrate 21. In other embodiments, the first laser and the second laser may scan and irradiate the preset area of the electronic device 1 at preset time intervals, respectively.
  • the embodiment of the invention provides an electronic device and a manufacturing method thereof.
  • the manufacturing process of the electronic device by arranging the electronic device to be peeled off on the rigid substrate, wherein the electronic device includes several functional units arranged at intervals and an elastic layer covering the several functional units; Ablation treatment to separate several functional units from the rigid substrate together with the elastic layer. Since the electronic device of the present invention is compatible with existing semiconductor, display panel and other manufacturing technologies, the production efficiency is improved.
  • the elastic layer can not only provide elasticity for the electronic device, but also be laser-released together with the functional unit, that is, the elastic layer and the functional unit are separated from the rigid substrate at the same time.
  • the electronic device can be easily separated from the rigid substrate to avoid damage to the electronic device, thereby protecting the electronic device, and mass production of the electronic device is realized by laser release. Advantage in terms of rate.

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Abstract

La présente invention concerne un dispositif électronique et son procédé de fabrication. Le procédé de fabrication d'un dispositif électronique comprend les étapes suivantes consistant : à fournir un substrat rigide (10) (S101) ; à disposer, sur le substrat rigide (10), un dispositif électronique (1) à décoller, le dispositif électronique (1) comprenant une pluralité d'unités fonctionnelles (20) espacées les unes des autres et une couche souple (30) recouvrant la pluralité d'unités fonctionnelles (20) (S103) ; et à réaliser un processus de retrait de telle sorte que la pluralité d'unités fonctionnelles (20) et la couche souple (30) sont retirées ensemble du substrat rigide (S105). Le procédé de fabrication d'un dispositif électronique est compatible avec les techniques de fabrication de semi-conducteurs et d'écrans d'affichage dans l'état de la technique et peut augmenter l'efficacité de production.
PCT/CN2018/123097 2018-12-24 2018-12-24 Dispositif électronique et son procédé de fabrication Ceased WO2020132801A1 (fr)

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CN201880097629.9A CN113169076A (zh) 2018-12-24 2018-12-24 电子器件及其制作方法

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