WO2020172848A1 - Amplificateur à ondes progressives et dispositif d'émission-réception d'informations - Google Patents

Amplificateur à ondes progressives et dispositif d'émission-réception d'informations Download PDF

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Publication number
WO2020172848A1
WO2020172848A1 PCT/CN2019/076458 CN2019076458W WO2020172848A1 WO 2020172848 A1 WO2020172848 A1 WO 2020172848A1 CN 2019076458 W CN2019076458 W CN 2019076458W WO 2020172848 A1 WO2020172848 A1 WO 2020172848A1
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WIPO (PCT)
Prior art keywords
transmission line
equivalent
input
output
electrostatic protection
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Ceased
Application number
PCT/CN2019/076458
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English (en)
Chinese (zh)
Inventor
劳之豪
王昕�
向涛
商松泉
袁亚兴
刘德昂
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Aluksen Optoelectronics Co Ltd
Original Assignee
Aluksen Optoelectronics Co Ltd
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Priority to PCT/CN2019/076458 priority Critical patent/WO2020172848A1/fr
Publication of WO2020172848A1 publication Critical patent/WO2020172848A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators

Definitions

  • This application belongs to the field of amplifier technology, and in particular relates to a traveling wave amplifier and information transceiver equipment.
  • Traveling-Wave Amplifiers also known as distributed amplifiers
  • Traveling wave amplifiers can achieve large flat gains in a wide frequency band, and are widely used in high-speed communications, microwave and millimeter wave wireless communications, broadband wireless transceivers, high-resolution radars and imaging systems.
  • TWA Traveling-Wave Amplifier
  • HEMT Mobility transfer
  • the traveling wave amplifier is a broadband amplifier circuit.
  • the equivalent capacitance of the input and output of the transistor can be equivalent to the transmission line, forming an LC (inductance-capacitance) ladder network.
  • the input/output equivalent capacitance of the active device and the on-chip spiral inductance respectively constitute the gate line and drain line of the amplifier.
  • the gate line and the drain line are lumped-parameter low-pass transmission lines with different characteristic impedances.
  • the input signal is transmitted on the gate line and It is applied to the gate of the active device with different phases, and the amplified signal is obtained at the drain line through the transconductance.
  • the amplified signal on the drain line is superimposed in phase to achieve broadband amplification.
  • the embodiments of the present application provide a traveling wave amplifier and an information transceiving device, aiming to solve the problem of poor electrostatic withstand voltage protection and low reliability of the traditional traveling wave amplifier.
  • the first aspect of the embodiments of the present application provides a traveling wave amplifier having an input port and an output port, and the traveling wave amplifier circuit includes:
  • An input transmission line which is connected to the input port and includes a first electrostatic protection circuit and a plurality of first inductive elements connected in series, the first electrostatic protection circuit is close to the input port side;
  • An output transmission line which is connected to the output port and includes a second electrostatic protection circuit and a plurality of second inductive elements connected in series, the second electrostatic protection circuit being close to the output port side;
  • At least two amplifiers connected between the input transmission line and the output transmission line;
  • the capacitance and inductance equivalent to the input transmission line of the first electrostatic protection circuit are matched with the equivalent input capacitance and inductance of each amplifier to the input transmission line, and the second electrostatic protection circuit
  • the capacitance and inductance equivalent to the output transmission line are matched with the output capacitance and inductance equivalent to the output transmission line of each amplifier.
  • the first electrostatic protection circuit is equivalent to the equivalent capacitance value and equivalent inductance value of the input transmission line, respectively, and the equivalent capacitance value of each amplifier equivalent to the input transmission line ,
  • the equivalent inductance value is consistent.
  • the second electrostatic protection circuit is equivalent to the equivalent capacitance value and equivalent inductance value of the output transmission line, respectively, and the equivalent capacitance value of each amplifier equivalent to the output transmission line ,
  • the equivalent inductance value is consistent.
  • each of the amplifiers includes a transistor device, the gate of the transistor device is connected to the input transmission line, and the drain of the transistor device is connected to the output transmission line.
  • each of the transistor devices includes one or more transistors connected in cascade between the common terminal, the input transmission line and the output transmission line.
  • an input connection point is formed between adjacent first inductive elements on the input transmission line, and an output connection point is formed between adjacent second inductive elements on the output transmission line.
  • An electrostatic protection circuit is connected to the first input connection point close to the input port side, the second electrostatic protection circuit is connected to the first output connection point close to the output port side, and each of the amplifying devices is connected in sequence Between the input connection point outside the first input connection point and the output connection point outside the first output connection point.
  • the first electrostatic protection circuit includes a first diode and a second diode; the cathode of the first diode is connected to the power source, and the anode is connected to the first input connection Point; the cathode of the second diode is connected to the first input connection point, and the anode is connected to a negative power supply or ground.
  • the second electrostatic protection circuit includes a third diode and a fourth diode; the cathode of the third diode is connected to the power supply, and the anode is connected to the first output connection Point; the cathode of the fourth diode is connected to the first output connection point, and the anode is connected to the negative power supply or ground.
  • it further includes a plurality of matching capacitors connected between the output transmission line and the common terminal.
  • the capacitance value of the matching capacitor is selected according to the tolerance value of the equivalent capacitance of the input transmission line and the equivalent capacitance of the output transmission line.
  • the capacitance of the matching capacitor is equal to the difference between the equivalent capacitance of the input transmission line and the equivalent capacitance of the output transmission line.
  • the second aspect of the embodiments of the present application provides an information transceiving device including the traveling wave amplifier described above.
  • the electrostatic protection circuit of the traveling wave amplifier mentioned above is put into the transmission line of the input and output ends.
  • the components of the electrostatic protection circuit are added to the input transmission line and as part of the traveling wave amplifier.
  • the electrostatic protection circuit can select parameters according to the equivalent capacitance and equivalent inductance of the amplifier equivalent to the input/output transmission line, so that it still needs to meet the bandwidth and characteristic impedance corresponding to the cut-off frequency of the traveling wave amplifier, without affecting the input transmission line and The original electrical characteristics of the output transmission line, in this case, the electrostatic protection circuit will not affect the total bandwidth of the traveling wave amplifier; in addition, the addition of the electrostatic protection circuit can increase the electrostatic discharge voltage range of the traveling wave amplifier by several times.
  • Figure 1 is a schematic diagram of the structure of a traveling wave amplifier provided by an embodiment of the application (in order to briefly illustrate the principle of the traveling wave amplifier, the bias circuit of the transistor is not drawn);
  • Fig. 2 (A) is an exemplary circuit schematic diagram of the first electrostatic protection circuit in the traveling wave amplifier shown in Fig. 1;
  • Figure 2 (B) is a schematic diagram of the equivalent capacitance and equivalent inductance of the first electrostatic protection circuit shown in 2 (A);
  • FIG. 3(A) is a schematic circuit diagram of an example of a second electrostatic protection circuit in the traveling wave amplifier shown in FIG. 1;
  • Figure 3(B) is a schematic diagram of the equivalent capacitance and equivalent inductance of the second electrostatic protection circuit shown in 3(A);
  • FIG. 4 is a schematic circuit diagram of an example of the equivalent capacitance of the input transmission line in the traveling wave amplifier shown in FIG. 1.
  • each amplifier has parasitic capacitance, and the parasitic capacitance of the input and output ends of each amplifier, and the parasitic capacitance of the transmission line can be equivalent to the transmission line.
  • the inductance in each amplifier and the parasitic inductance of the transmission line are also equivalent to the transmission line. It can be seen that the electrical characteristics of the input transmission line are limited by the equivalent capacitance and equivalent inductance, and the electrical characteristics of the output transmission line are also defined by the equivalent capacitance and equivalent inductance. To limit.
  • the inductance element on the transmission line of the traveling wave amplifier generally includes parasitic inductance and the equivalent inductance of the amplifier equivalent to the link. Of course, it may also include discrete inductance devices connected in series on the link.
  • the traveling wave amplifier provided in the embodiment of the present application can be used in information transceiver equipment, such as high-speed communications, broadband wireless transceivers, high-resolution radars, and imaging systems.
  • the traveling wave amplifier 10 provided by the embodiment of the present application has an input port 12 and an output port 14.
  • the traveling wave amplifier 10 includes an input transmission line 16, an output transmission line 18, and at least two amplifiers 19.
  • the input transmission line 16 is connected to the input port 12 and includes a first electrostatic protection circuit 162 and a plurality of first inductive elements 164 connected in series.
  • the first electrostatic protection circuit 162 is close to the input port 12 side.
  • the first inductive element 164 between any one of the amplifiers 19 has an inductance L1, and the first and last first inductive elements 164 have an inductance of L1/2.
  • the input port 12 is provided at one end of the input transmission line 16, and the other end of the input transmission line 16 is connected to the common end through a resistor Rg.
  • the output transmission line 18 is connected to the output port 14 and includes a second electrostatic protection circuit 182 and a plurality of second inductive elements 184 connected in series.
  • the second electrostatic protection circuit 182 is close to the output port 14 side.
  • the first inductive element 164 and the second inductive element 184 may be a lumped inductance or a transmission line equivalent inductance, and their selection depends on the operating frequency band and environment.
  • the second inductive element 184 between any one of the amplifiers 19 has an inductance L2, and the first and last second inductive elements 184 have an inductance of L2/2.
  • the output port 14 is provided at the output end of the output transmission line 18, and the input end of the output transmission line 18 is connected to the common end through a resistor Rd.
  • the resistance values of the resistance Rd and the resistance Rg are the same, which match the impedance of the input transmission line 16 and the output transmission line 18 respectively to prevent reflection along the transmission line, and the common terminal is usually ground, and the inductance L1 and the inductance L2 are the same.
  • the amplifier 19 is connected between the input transmission line 16 and the output transmission line 18.
  • the amplifiers 19 are connected in parallel in the same direction, and the input signal is transmitted on the input transmission line 16 and added to the input of the amplifier 19 with different phases, and the amplified signal is obtained on the output transmission line 18 through the transconductance.
  • the amplified signal on the output transmission line 18 is superimposed in phase, thereby achieving broadband amplification.
  • the amplifiers 19 may also be connected in anti-parallel.
  • the amplifier 19 includes a transistor device, the gate of the transistor device is connected to the input transmission line 16, and the drain of the transistor device is connected to the output transmission line 18. In this way, the input transmission line 16 is the gate line, and the output transmission line 18 is the drain line.
  • Each transistor device 19 includes one or more transistors 192 cascaded between the common terminal and the output transmission line 18. In this example, each transistor device is shown as two vertically cascaded field effect transistors 192. The gate of one field effect transistor 192 is connected to the input transmission line 16, and the drain of the other field effect transistor 192 is connected to the output transmission line 18. In other embodiments, each transistor device shows the need for signal amplification, and can be set as one field effect transistor, or three or more cascaded field effect transistors.
  • the first electrostatic protection circuit 162 equivalent to the input transmission line 16 parasitic capacitance Cesd1 according to each amplifier The capacitance equivalent to the input transmission line 16 is selected for matching, and the parasitic capacitance Cesd2 equivalent to the output transmission line 18 of the second electrostatic protection circuit 182 is selected for matching according to the capacitance equivalent to the output transmission line 18 of each amplifier 19.
  • the inductance of the first electrostatic protection circuit 162 equivalent to the input transmission line 16 is selected according to the inductance of each amplifier 19 equivalent to the input transmission line 16 to match
  • the second electrostatic protection circuit 182 is equivalent to The inductance of the output transmission line 18 (ie, its parasitic inductance) is selected to match the inductance of each amplifier 19 equivalent to the output transmission line 18.
  • Each amplifier 19 has an input (gate-source) capacitance Cin and an output (source-drain) capacitance Cout, and in the traveling wave amplifier 10, the input capacitance Cin and the output capacitance Cout of the amplifier 19 can be equivalent to
  • the input/output transmission lines 16, 18 are the LC ladder network. 4
  • the equivalent capacitance C of the input transmission line 16 includes the input capacitance Cin of each amplifier 19 equivalent to the input transmission line 16 and the parasitic capacitance C L1 of each first inductive element chain; similarly, the output transmission line 18, etc.
  • the effective capacitance includes the output capacitance Cout of each amplifier 19 equivalent to the output transmission line 18 and the parasitic capacitance of each second inductive element chain.
  • the input transmission line of the first inductive element chain and the second inductive element chain have the same element parameters, so their parasitic capacitances are also considered the same.
  • the equivalent parasitic capacitances Cesd1, Cesd2 and equivalent parasitic inductance values of the two electrostatic protection circuits 162, 182 will be based on the value of the amplifier 19 in the transmission line.
  • the input capacitance Cin, the output capacitance Cout and the equivalent parasitic inductance are matched.
  • the characteristic impedance and cutoff frequency of the improved traveling wave amplifier 10 are consistent with those of the standard traveling wave amplifier without electrostatic protection circuits 162 and 182.
  • the electrostatic discharge voltage range of the traveling wave amplifier 10 is increased several times.
  • the capacitance value and the equivalent (parasitic) inductance value of the equivalent (parasitic) capacitance Cesd1 of the first electrostatic protection circuit 162 equivalent to the input transmission line 16 are equivalent to the equivalent (parasitic) inductance value of each amplifier 19 to the input transmission line 16.
  • the capacitance value and equivalent (parasitic) inductance value of the input capacitor Cin are the same.
  • the equivalent (parasitic) inductance value is consistent.
  • an input connection point is formed between adjacent first inductive elements 164 on the input transmission line 16, and an adjacent second inductive element 184 on the output transmission line 18
  • the output connection point is formed between the first electrostatic protection circuit 162 and the first input connection point near the input port 12 is connected.
  • the first electrostatic protection circuit 162 passes through a (first) first inductive element 164 and the input The port 12 is connected, and the second electrostatic protection circuit 182 is connected to the first output connection point near the output port 14, that is, the second electrostatic protection circuit 182 is connected to the output port 14 through a (last) second inductive element 184,
  • Each amplifier 19 is sequentially connected between an input connection point other than the first input connection point and an output connection point other than the first output connection point. In this way, the equivalent capacitance on each input connection point is consistent, and the equivalent capacitance on each output connection point is also consistent, so that the parameters of each connection point of the input transmission line 16 and the output transmission line 18 are matched, so as not to affect the overall bandwidth.
  • the first electrostatic protection circuit 162 includes a first diode D1 and a second diode D2; the cathode of the first diode D1 is connected to The power supply VDD, the anode is connected to the first input connection point; the cathode of the second diode D2 is connected to the first input connection point, and the anode is connected to the negative power supply VSS or ground.
  • the sizes of the first diode D1 and the second diode D2 need to be carefully selected, so that the total equivalent (parasitic) capacitance Cesd1 of the first diode D1 and the second diode D2 and the traveling wave amplifier 10
  • the input transmission line capacitance Cin of each amplifier is equivalent to the same; and the two ends of the connection point of the first diode D1 and the second diode D2 are equivalent to the inductance of the input transmission line 16 as L1/2, so After the transmission line on the right is connected in series with the original input transmission line, the total equivalent inductance is L1.
  • the second electrostatic protection circuit 182 includes a third diode D3 and a fourth diode D4; the cathode of the third diode D3 is connected to the power supply VDD, The anode is connected to the first output connection point; the cathode of the fourth diode D4 is connected to the first output connection point, and the anode is connected to the negative power supply VSS or ground.
  • the dimensions of the third diode D3 and the fourth diode D4 need to be strictly selected, so that the total equivalent (parasitic) capacitance Cesd2 of the third diode D3 and the fourth diode D4 and the traveling wave amplifier 10
  • the output transmission line capacitance Cout of each amplifier 19 is equivalent to the same; and the inductance of the third diode D3 and the fourth diode D4 connecting point to the output transmission line 18 is equivalent to L2/2, In this way, the total equivalent inductance of the left transmission line and the original output transmission line in series is L2.
  • the high-voltage discharge enters the positive or negative power circuit through the diode connected to the positive or negative pole.
  • the electrostatic protection circuits 162, 182 will not affect the total bandwidth of the traveling wave amplifier 10, and will not be significantly reduced by adding the electrostatic protection circuits 162, 182.
  • the characteristic impedance and cut-off frequency of the improved traveling wave amplifier are consistent with the standard traveling wave amplifier without electrostatic protection circuit.
  • the traveling wave amplifier 10 When the traveling wave amplifier 10 is connected to the amplified signal, two signal waves propagate through the transmission line, and these signals are represented as a “leakage line wave” corresponding to the output transmission line 18 and a “grid line wave” corresponding to the input transmission line 16.
  • the input capacitance Cin is different from the output capacitance Cout.
  • the input capacitance Cin is higher than the output capacitance Cout. Therefore, the impedance matching condition set in a typical traveling wave amplifier results in a mismatch in the propagation speed in the two transmission lines. Specifically, the speed of the drain wave is greater than the speed of the gate wave.
  • the traveling wave amplifier 10 further includes a plurality of matching capacitors Cd connected between the output transmission line 18 and the common terminal.
  • the capacitance of the matching capacitor Cd is selected according to the tolerance difference between the equivalent capacitance of the input transmission line 16 and the equivalent capacitance of the output transmission line 18, specifically according to the tolerance difference between the input capacitance Cin and the output capacitance Cout.
  • the test compared the circuit chip of the traveling wave amplifier 10 without the electrostatic protection circuit and the circuit chip of the traveling wave amplifier 10 with the electrostatic protection circuit provided in the embodiment of the application. , The protection capabilities of the two chips for electrostatic protection.
  • the test is aimed at the human body discharge mode (Human-Body Model, HBM), the test method adopts the standard ANSI/ESDA/JEDEC
  • the method described in JS-001-2014 Electro Discharge Sensitivity Test-Human Body Model
  • the traveling wave amplifier 10 circuit chip without electrostatic protection the test result is: the chip withstands the electrostatic discharge voltage range of 125V to less than 250V, but adopts
  • the method in this application incorporates the traveling wave amplifier 10 circuit chip of the electrostatic protection circuit, and the chip withstands the electrostatic discharge discharge voltage ranging from 500V to less than 1000V.
  • the test result proves that the circuit chip of the traveling wave amplifier 10 with the electrostatic protection circuit added by the method in this application has significantly enhanced protection against electrostatic discharge.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un amplificateur à ondes progressives, qui est pourvu d'un port d'entrée et d'un port de sortie. L'amplificateur à ondes progressives comprend : une ligne de transmission d'entrée avec un premier circuit de protection électrostatique ; une ligne de transmission de sortie avec un second circuit de protection électrostatique ; et au moins deux amplificateurs connectés entre la ligne de transmission d'entrée et la ligne de transmission de sortie, la capacité équivalente et l'inductance de chacun des circuits de protection électrostatique correspondant à la capacité et à l'inductance de chacun des amplificateurs équivalant à chacune des lignes de transmission. Ainsi, après avoir été ajouté aux circuits de protection électrostatique, des éléments des circuits de protection électrostatique sont également ajoutés, en tant que partie de l'amplificateur à ondes progressives, à la ligne de transmission d'entrée et à la ligne de transmission de sortie, et n'ont pas d'impact sur les propriétés électriques d'origine de la ligne de transmission d'entrée et de la ligne de transmission de sortie. Au moyen de la sélection de paramètres d'élément appropriés, les circuits de protection électrostatique n'ont pas d'impact sur la bande passante totale de l'amplificateur à ondes progressives, et permettent à une plage de tensions de décharge électrostatique qui peut être prise en charge par l'amplificateur à ondes progressives d'augmenter plusieurs fois.
PCT/CN2019/076458 2019-02-28 2019-02-28 Amplificateur à ondes progressives et dispositif d'émission-réception d'informations Ceased WO2020172848A1 (fr)

Priority Applications (1)

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PCT/CN2019/076458 WO2020172848A1 (fr) 2019-02-28 2019-02-28 Amplificateur à ondes progressives et dispositif d'émission-réception d'informations

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PCT/CN2019/076458 WO2020172848A1 (fr) 2019-02-28 2019-02-28 Amplificateur à ondes progressives et dispositif d'émission-réception d'informations

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1713522A (zh) * 2004-06-25 2005-12-28 冲电气工业株式会社 分布式放大器
US20080100381A1 (en) * 2006-10-30 2008-05-01 Sushil Kumar Common drain driven cascode enhancement mode traveling wave amplifier
US20160072462A1 (en) * 2014-09-10 2016-03-10 Sumitomo Electric Industries, Ltd. Traveling-wave amplifier
US20160380699A1 (en) * 2015-06-29 2016-12-29 Sumitomo Electric Industries, Ltd. Traveling wave amplifier for driving optical modulator
US20170117860A1 (en) * 2015-10-23 2017-04-27 Sumitomo Electric Industries, Ltd. Amplifier
CN109150122A (zh) * 2018-08-01 2019-01-04 南京邮电大学 一种可重构的分布式放大器电路

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1713522A (zh) * 2004-06-25 2005-12-28 冲电气工业株式会社 分布式放大器
US20080100381A1 (en) * 2006-10-30 2008-05-01 Sushil Kumar Common drain driven cascode enhancement mode traveling wave amplifier
US20160072462A1 (en) * 2014-09-10 2016-03-10 Sumitomo Electric Industries, Ltd. Traveling-wave amplifier
US20160380699A1 (en) * 2015-06-29 2016-12-29 Sumitomo Electric Industries, Ltd. Traveling wave amplifier for driving optical modulator
US20170117860A1 (en) * 2015-10-23 2017-04-27 Sumitomo Electric Industries, Ltd. Amplifier
CN109150122A (zh) * 2018-08-01 2019-01-04 南京邮电大学 一种可重构的分布式放大器电路

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