WO2020200076A1 - 一种磁电阻惯性传感器芯片 - Google Patents

一种磁电阻惯性传感器芯片 Download PDF

Info

Publication number
WO2020200076A1
WO2020200076A1 PCT/CN2020/081618 CN2020081618W WO2020200076A1 WO 2020200076 A1 WO2020200076 A1 WO 2020200076A1 CN 2020081618 W CN2020081618 W CN 2020081618W WO 2020200076 A1 WO2020200076 A1 WO 2020200076A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistance
vibrating diaphragm
inertial sensor
sensor chip
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/081618
Other languages
English (en)
French (fr)
Inventor
祁彬
丰立贤
郭海平
沈卫锋
薛松生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MultiDimension Technology Co Ltd
Original Assignee
MultiDimension Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MultiDimension Technology Co Ltd filed Critical MultiDimension Technology Co Ltd
Priority to US17/594,149 priority Critical patent/US11940299B2/en
Priority to JP2021558868A priority patent/JP7188824B2/ja
Priority to EP20784217.0A priority patent/EP3954972B1/en
Publication of WO2020200076A1 publication Critical patent/WO2020200076A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/02—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by magnetic means, e.g. reluctance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/105—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by magnetically sensitive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
    • G01R33/0076—Protection, e.g. with housings against stray fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/038—Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices

Definitions

  • the invention relates to the field of magnetic sensors, in particular to a magnetoresistance inertial sensor chip.
  • inertial sensor chips used to measure acceleration, vibration, and pressure have received widespread attention in various fields.
  • the field of vibration sensors can be subdivided into solid vibration detection, including building vibration and mechanical vibration; liquid vibration detection, including hydrophone sonar; and gas vibration, including microphone applications.
  • the existing inertial sensor chips are mainly based on silicon-based capacitive, piezoelectric, and silicon-based piezoresistive principles, which convert acceleration, vibration, and pressure waiting to be measured into voltage or current signals for measurement.
  • the silicon-based capacitive type has good temperature stability, high sensitivity, good temperature stability, but a narrow response frequency band; piezoelectric type has excellent temperature stability and time stability, wide linear range, but low sensitivity; silicon-based piezoresistance
  • the model has high sensitivity, large dynamic response, and can measure small pressures, but the temperature stability is poor; in addition, the above-mentioned technology is basically a blind spot in the detection of vibration signals with frequencies above 20MHz.
  • Magnetoresistance materials specifically including tunnel junction magnetoresistance (TMR) with pinned layer, free layer, and non-magnetic tunnel barrier layer structure, giant magnetoresistance with pinned layer, free layer, and non-magnetic conductive spacer layer structure (GMR), and anisotropic magnetoresistance (AMR) with a magnetic anisotropic layer structure.
  • TMR tunnel junction magnetoresistance
  • GMR non-magnetic conductive spacer layer structure
  • AMR anisotropic magnetoresistance
  • magnetoresistive material has excellent frequency response characteristics, good temperature characteristics, and high sensitivity. Combined with suitable mechanical transmission structure and excitation structure, it can be used for specific inertial parameter measurement. However, in the measurement of inertial parameters, the excitation structure and the magnetoresistive element are designed in different planes in space.
  • the overall yield rate is not high, the measurement linear interval is reduced, and the mechanical transmission structure and excitation
  • the structure and the relative spatial adjustment of the magnetoresistive element are limited, which in turn leads to many deficiencies such as limited performance adjustment.
  • the present invention is based on the characteristics of the TMR/GMR/AMR magnetoresistive material itself that the resistance value of the magneto-resistive material responds quickly to external magnetic field changes, and the TMR/GMR/AMR With its own excellent temperature characteristics, combined with magnetic or non-magnetic vibrating diaphragms, a high-sensitivity, high-frequency measurement of magnetoresistance inertial sensor chip that can measure tiny high-frequency vibration, pressure or acceleration signals is proposed.
  • the magnetoresistance inertial sensor chip uses magnetoresistance
  • the signal transmitting source permanent magnetic film and the signal receiving source magnetoresistance are set on the same horizontal plane to maximize the signal linearity.
  • the resistance value change caused by the magnetic resistance of the permanent magnet film is used to convert the mechanical motion into an electrical signal. , So as to accurately obtain the vibration, acceleration or pressure signal to be measured.
  • a magnetoresistance inertial sensor chip which is characterized by comprising a substrate, a vibrating diaphragm, an induced magnetoresistance, and at least one permanent magnetic film, wherein:
  • the vibrating diaphragm covers one side surface of the substrate, the inductive magnetoresistance and the permanent magnetic film are arranged on the surface of the vibrating diaphragm away from the substrate, and the surface of the vibrating diaphragm is further away from the substrate.
  • a contact electrode is provided, and the inductive magnetic resistance is connected to the contact electrode through a connecting lead;
  • the substrate includes a cavity formed by etching, one or both of the induced magnetoresistance and the permanent magnetic film are arranged in the cavity in the vertical projection area of the vibrating diaphragm, and the permanent magnetic film generates The magnetic field changes in the sensitivity direction component of the induced magnetoresistance, which causes the resistance value of the induced magnetoresistance to change, thereby causing the output electrical signal to change.
  • the inductive magnetoresistance is arranged in an area outside the vertical projection area of the vibrating diaphragm, and the permanent magnetic film is arranged in the middle of the cavity in the vertical projection area of the vibrating diaphragm ,or
  • the inductive magnetoresistance is arranged on the inner edge of the cavity in the vertical projection area of the vibrating diaphragm, and the permanent magnetic film is arranged at the middle position of the cavity in the vertical projection area of the vibrating diaphragm, or
  • the induced magnetoresistance is arranged in the middle of the cavity in the vertical projection area of the vibrating diaphragm, and the permanent magnetic film is arranged in the cavity outside the vertical projection area of the vibrating diaphragm.
  • the reference magnetoresistance is located on the surface of the vibrating diaphragm away from the substrate, and is arranged in the cavity outside the vertical projection area of the vibrating diaphragm.
  • the resistor and the inductive magnetic resistance are connected to form a full-bridge or half-bridge structure through the package leads.
  • a side of the reference magnetoresistance away from the vibrating diaphragm is provided with a magnetic shielding layer containing a soft magnetic material, and the magnetic shielding layer covers the reference magnetoresistance.
  • the reference magnetoresistance and the induced magnetoresistance are tunnel junction magnetoresistance, giant magnetoresistance or anisotropic magnetoresistance.
  • it further includes a packaging structure composed of a packaging substrate and a packaging shell, and the base is located in a cavity formed by the packaging substrate and the packaging shell and fixed on the packaging substrate.
  • a packaging structure composed of a packaging substrate and a packaging shell, and the base is located in a cavity formed by the packaging substrate and the packaging shell and fixed on the packaging substrate.
  • the packaging shell includes one or more layers of magnetic field shielding shells made of soft magnetic materials, or one or more layers of electric field shielding shells made of metal foil or composed of the magnetic field shielding shell and the A shell formed by stacking electric field shielding shells.
  • the packaging substrate or the packaging shell is provided with at least one opening.
  • the thickness of the vibrating diaphragm is 0.001 ⁇ m to 1000 ⁇ m
  • the edge of the contact surface between the cavity and the vibrating diaphragm is a circle, an ellipse, a rectangle or a parallelogram
  • the gap between the cavity and the vibrating diaphragm The aspect ratio of the circumscribed rectangle of the contact surface ranges from 20:1 to 1:1, and the width of the circumscribed rectangle of the contact surface ranges from 0.1 ⁇ m to 2000 ⁇ m.
  • the vibration diaphragm includes a plurality of through holes formed by etching.
  • the permanent magnetic film is made of one or more layers of hard magnetic materials, or composed of a composite unit composed of soft magnetic materials and antiferromagnetic materials [soft magnetic/antiferromagnetic]n, or composed of soft magnetic materials and hard magnetic materials.
  • the magnetic material forms a composite unit to form [soft magnetic/hard magnetic] n, where n is a natural number, hard magnetic materials include at least one of CoPt, CoCrPt, and FePt, soft magnetic materials include at least one of FeCo and NiFe, anti-iron
  • the magnetic material includes at least one of PtMn and IrMn.
  • the magnetizing direction of the permanent magnetic film is in the plane of the permanent magnetic film or perpendicular to the plane of the permanent magnetic film
  • the sensitivity direction of the induced magnetoresistance is in the plane of the permanent magnetic film or perpendicular to the plane of the permanent magnetic film.
  • the sensor chip includes a feedback coil
  • the feedback coil is a planar etching coil, and the planar etching coil is located on the surface of the vibrating diaphragm on the side away from the substrate, and is arranged in the cavity outside the vertical projection area of the vibrating diaphragm,
  • the feedback coil is a wire-wound coil, and the wire-wound coil is located directly above the permanent magnetic film, or located directly below the permanent magnetic film and arranged below or in the cavity.
  • the present invention has the following beneficial technical effects:
  • the invention uses a vibrating diaphragm to conduct changes in external pressure, vibration or acceleration, uses magnetoresistance as a sensitive material, converts the mechanical movement of the vibrating diaphragm into a change in magnetoresistance resistance, and arranges the magnetoresistive element and the permanent magnet film as an excitation structure in the vibration
  • the same surface of the diaphragm makes the magnetoresistive element and the permanent magnetic film lie on the same reference plane, which facilitates the adjustment of the relative spatial position of the mechanical transmission structure vibration diaphragm, the excitation structure permanent magnet film, and the magnetoresistive element, which is beneficial to the linear range of the sensor output signal and the sensor yield Improved; using the high sensitivity and high frequency response characteristics of magnetoresistance to improve the output signal strength and frequency response, which is conducive to the detection of weak pressure, vibration or acceleration and high frequency vibration.
  • FIG. 1 is a top view of a magnetoresistive inertial sensor chip provided by an embodiment of the present invention
  • 2a is a cross-sectional view of a magnetoresistive inertial sensor chip provided by an embodiment of the present invention
  • 2b is a cross-sectional view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • FIG. 3 is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • Fig. 5a is a schematic structural diagram of another magnetoresistive inertial sensor provided by an embodiment of the present invention.
  • 5b is a schematic structural diagram of another magnetoresistive inertial sensor provided by an embodiment of the present invention.
  • 5c is a schematic structural diagram of another magnetoresistive inertial sensor provided by an embodiment of the present invention.
  • Figure 6a is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • Figure 6b is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • Figure 7a is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • Figure 7b is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • FIG. 7c is a cross-sectional view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • FIGS. 8a and 8b are top views of two other magnetoresistive inertial sensor chips provided by embodiments of the present invention.
  • FIGS. 9a-9b are top views of two other magnetoresistive inertial sensor chips provided by embodiments of the present invention.
  • FIGS. 10a-10b are top views of two other magnetoresistive inertial sensor chips provided by embodiments of the present invention.
  • 11a-11d are schematic diagrams of connection modes of magnetoresistive bridge circuits provided by embodiments of the present invention.
  • FIG. 12 is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • 13a-13c are schematic diagrams of other three types of magnetoresistive inertial sensor chips provided by embodiments of the present invention.
  • FIGS 14a-14f are schematic diagrams of typical arrangements of permanent magnetic film materials.
  • the permanent magnetic film and the induced magnetoresistance of the magnetoresistance inertial sensor are not on the same plane, and they are up and down structures. Because of the limitation of the vibrating structure material, the adjustment of the relative up and down positions is limited, and because of the linearity requirements of the output signal, The adjustment of the relative horizontal position is restricted, and as a result, the design structure is very limited.
  • Fig. 1 is a top view of a magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • Fig. 2a is a cross-sectional view of a magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • Fig. 2a may correspond to Fig. 1 along the section line A-A.
  • Figure 2b is a cross-sectional view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • Figure 2b corresponds to the cross-sectional view along the section line B-B' in Figure 1; refer to Figures 1, 2a and 2b, the magnetoresistance inertial sensor chip includes a substrate 101, a vibrating diaphragm (wherein, the reference numeral 102' in FIG. 1 and the reference numeral 102 in FIGS. 2a and 2b), an induced magnetoresistance 105, and at least one permanent magnetic film 108 .
  • the substrate 101 is one of single crystal silicon, metal, and ceramic.
  • the vibrating diaphragm covers the upper surface of the substrate 101, and the induced magnetoresistance 105 and the permanent magnetic film 108 are arranged on the upper surface of the vibrating diaphragm.
  • the upper surface and the lower surface of the vibrating diaphragm are flat surfaces.
  • a contact electrode 106 is provided on the upper surface of the vibrating diaphragm, and the induced magnetoresistance 105 is connected to the contact electrode 106 through a connecting lead 104.
  • the substrate 101 includes a cavity 103, wherein the cavity 103 can be obtained by etching the substrate 101.
  • the cavity 103 is located on the lower side of the vibrating diaphragm.
  • One or all of the induced magnetoresistor 105 and the permanent magnetic film 108 are arranged in the vertical projection area of the cavity 103 in the vibrating diaphragm 102.
  • the permanent magnetic film 108 is used as an excitation structure, and it and the induction magnetoresistor 105 are arranged on the same surface of the vibrating diaphragm, so that the permanent magnet film 108 and the induction magnetoresistor 105 are on the same reference plane.
  • Magnetoresistance 105 has little effect on the horizontal position adjustment on the signal linearity, so compared with traditional magnetoresistance inertial sensor chips, it can make the structure design of magnetoresistance inertial sensor chips more diversified, and facilitate the mechanical transfer of structural vibration diaphragms and excitation structure permanent magnets. Adjust the relative spatial position of thin film and magnetoresistive elements.
  • FIG. 1 only schematically shows that the permanent magnetic film 108 is arranged in the middle of the vibrating diaphragm, and the induced magnetoresistance 105 is arranged in the cavity 103 outside the vertical projection area of the vibrating diaphragm.
  • the embodiment of the present invention The positions of the induced magnetoresistance 105 and the permanent magnetic film 108 are not specifically limited, as long as it satisfies that one or all of the induced magnetoresistance 105 and the permanent magnetic film 108 are arranged in the area of the cavity 103 in the vertical projection position of the vibrating diaphragm.
  • the magnetoresistance inertial sensor chip uses a vibrating diaphragm to transmit changes in external pressure, vibration or acceleration, and uses magnetoresistance as a sensitive material to convert the mechanical movement of the vibrating diaphragm into a change in the resistance value of the magnetoresistance.
  • the permanent magnetic film as the excitation structure is arranged on the same surface of the vibrating diaphragm, so that the magnetoresistive element and the permanent magnetic film are located on the same reference plane, which facilitates the adjustment of the relative spatial position of the vibration diaphragm of the mechanical transmission structure, the permanent magnet film of the excitation structure, and the magnetoresistive element. Conducive to the improvement of sensor output signal linear range and sensor yield; using the high sensitivity and high frequency response characteristics of magnetoresistance to improve the output signal strength and frequency response, which is conducive to the detection of weak pressure, vibration or acceleration and high frequency vibration.
  • the magnetoresistance that is sensitive to changes in the magnetic field of the permanent magnetic film is the induced magnetoresistance
  • the magnetoresistance that is not sensitive to changes in the magnetic field of the permanent magnet film is the reference magnetoresistance.
  • FIG. 3 is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • FIG. 4 may correspond to FIG. 3 along the section line C -C' section view. 3 and 4
  • the sensor chip of the present invention also includes a reference magnetoresistance 109.
  • the reference magnetoresistance 109 is located on the upper surface of the vibrating diaphragm and arranged in the cavity 103 outside the vertical projection area of the vibrating diaphragm.
  • the reference magnetoresistance 109 and the induction magnetoresistance 105 are connected to a full-bridge or half-bridge structure through package leads, or the induction magnetoresistance alone constitutes a single-arm structure.
  • the reference magnetoresistor 109 is covered with a magnetic shielding layer 107 containing a soft magnetic material, thereby shielding the influence of the change in the magnetic field generated by the permanent magnet film 108 on the resistance value of the reference magnetoresistor 109.
  • the reference magnetoresistance 109 and the induced magnetoresistance 105 of the present invention are adopted as tunnel junction magnetoresistance, giant magnetoresistance or anisotropic magnetoresistance.
  • the magnetizing direction of the permanent magnetic film of the present invention is in the plane of the permanent magnetic film or perpendicular to the plane of the permanent magnetic film, and the sensitivity direction of the induced magnetoresistance is in the plane of the permanent magnetic film or perpendicular to the plane of the permanent magnetic film.
  • the sensitivity direction of the induced magnetoresistance of the present invention is set along the Y direction, and the permanent magnetic film is magnetized along the Z direction.
  • the magnetoresistance is used to detect external pressure, vibration or acceleration
  • the Y-direction component of the magnetic field at the magnetoresistance position can be used to detect the pressure/vibration/acceleration by determining the displacement change.
  • the direction of the magnetoresistance sensitivity and the magnetizing direction of the permanent magnet film can be along any direction perpendicular to the plane of the diaphragm or in the plane of the diaphragm.
  • FIG. 5a is a schematic structural diagram of another magnetoresistive inertial sensor provided by an embodiment of the present invention
  • FIG. 5b is a schematic structural diagram of another magnetoresistive inertial sensor provided by an embodiment of the present invention
  • FIG. 5c is another schematic diagram provided by an embodiment of the present invention.
  • the sensor chip of the present invention further includes a packaging structure.
  • the packaging structure is composed of a packaging substrate 202 and a packaging shell 201.
  • the base 101 is located by the packaging substrate 202 and the package.
  • the packaging shell 201 constitutes a cavity and is fixed on the packaging substrate 202.
  • One or more openings 203 may be provided on the packaging structure to transmit external pressure or vibration. When it is necessary to transmit sound wave vibration (such as a microphone) or liquid/gas pressure, the package body needs to be opened to allow the liquid/gas to contact the chip. No opening is required to measure acceleration. According to specific embodiments of the present invention, one or more openings 203 can be provided in the packaging substrate 202 or the packaging shell 201 according to the needs of the actual application, as shown in Figures 5a-5c, where Figure 5a is a non-opening packaging structure Figure 5b shows that the opening is located on the package shell, and Figure 5c shows that the opening is located on the package substrate.
  • packaging shell 201 of the present invention adopts one or more layers of magnetic field shielding shells made of soft magnetic materials, or one or more layers of electric field shielding shells made of metal foil, or the magnetic field shielding shell and the The shells formed by stacking the electric field shielding shells can be selected according to actual needs.
  • Fig. 6a is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention
  • Fig. 6b is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention.
  • Figure 1, Figure 6a and Figure 6b are top views of three typical tunnel junction magnetoresistive inertial sensors of the present invention. Among them, R1 is arranged along the X direction, R3 is an induction magnetoresistance string, R2 and R4 are reference magnetoresistance strings, and a signal is derived from the contact electrode 106.
  • a permanent magnetic film can be arranged at the center of the vibrating diaphragm, and the magnetizing direction is perpendicular to the surface of the permanent magnetic diaphragm or parallel to any pair of permanent magnetic diaphragm edges.
  • the induced magnetoresistance can be located outside the vertical projection area of the vibrating diaphragm, or the magnetoresistance shown in Fig. 1 can be located at the inner edge area of the cavity in the vertical projection area of the vibrating diaphragm.
  • the vibrating diaphragm is affected by external vibration/acceleration/pressure, and drives the permanent magnetic film to move in the direction perpendicular to the diaphragm, causing the magnetic field strength at the magnetoresistance to change, thereby causing the magnetoresistance resistance to change.
  • the magnetoresistance is set in the center of the cavity projection, and the permanent magnetic film is set outside the vertical projection area of the vibrating diaphragm.
  • the diaphragm is affected by external vibration/acceleration/pressure and moves in the direction perpendicular to the diaphragm, causing The relative displacement of the magnetoresistance and the permanent magnetic film on the diaphragm causes the magnetic field strength at the magnetoresistance to change, thereby causing the magnetoresistance resistance to change.
  • FIG. 7a is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention
  • FIG. 7b is a top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention
  • FIG. 7c is another top view of another magnetoresistive inertial sensor chip provided by an embodiment of the present invention
  • the vibration diaphragm 102 is etched with a plurality of through holes 110, thereby improving the vibration transmission efficiency.
  • the projection of the through hole 110 on the vibrating diaphragm does not overlap with the projection of the magnetoresistance and its leads and electrodes. Since the opening is after the magnetoresistance and wires are set, the area where the magnetoresistance and the wires are located cannot be opened, otherwise the magnetoresistance and wires will Was knocked out.
  • Figures 8a and 8b are top views of two other magnetoresistive inertial sensor chips provided by embodiments of the present invention
  • Figures 9a and 9b are top views of two other magnetoresistive inertial sensor chips provided by embodiments of the present invention
  • refer to Figure 8a- Figures 8b and 9a-9b are top views of typical anisotropic magnetoresistive/giant magnetoresistive inertial sensors of the present invention.
  • the magnetoresistance is arranged in a strip or serpentine shape, and the magnetoresistance change signal is derived from the electrode.
  • the central part of the vibrating diaphragm can be provided with a permanent magnetic film, and the magnetizing direction is perpendicular to the surface of the diaphragm or parallel to any pair of diaphragm edges.
  • the diaphragm is affected by external vibration/acceleration/pressure, which drives the permanent magnetic film to move in a direction perpendicular to the diaphragm, which causes the magnetic field strength at the magnetoresistance to change, thereby causing the magnetoresistance resistance to change.
  • the diaphragm is affected by external vibration/acceleration/pressure and moves in the direction perpendicular to the diaphragm, causing it to be on the diaphragm.
  • the relative displacement of the magnetoresistance and the permanent magnetic film causes the magnetic field strength at the magnetoresistance to change, thereby causing the magnetoresistance resistance to change.
  • the reference magnetoresistance is not affected by the magnetic field generated by the permanent magnetic film.
  • the resistance value remains unchanged when the vibrating diaphragm vibrates.
  • the reference magnetoresistor R2 and R4 can be Set the magnetic shielding layer.
  • the reference resistors R2, R4 and the induced magnetoresistor R1, R3 are connected to form a reference full bridge or a reference half bridge, which converts vibration into electrical signal output.
  • the thickness of the vibrating diaphragm can be selected from 0.001 ⁇ m to 1000 ⁇ m.
  • the edge of the contact surface between the cavity and the vibrating diaphragm is circular, elliptical, rectangular or parallelogram.
  • the contact surface between the cavity and the vibrating diaphragm is circumscribed in the range of the rectangular aspect ratio. It is 20:1 to 1:1, wherein the width of the circumscribed rectangle of the contact surface is 0.1 ⁇ m to 2000 ⁇ m.
  • the magnetoresistance and the permanent magnetic film are arranged in an arc shape inside and outside the cavity projection, respectively
  • the working principle and connection method are the same as those in the rectangular diaphragm design.
  • the magnetic shielding layer can be covered above the reference magnetic resistance R2 and R4.
  • connection modes of the magnetoresistive bridge provided by embodiments of the present invention.
  • the connection mode of the induction magnetoresistance and the reference magnetoresistance includes a reference full bridge, a reference half bridge, a push-pull half bridge, or a single arm structure formed by the induction magnetoresistance alone.
  • Fig. 12 is a top view of another magnetoresistance inertial sensor chip provided by an embodiment of the present invention
  • Figs. 13a-13c are schematic structural diagrams of another three magnetoresistance inertial sensor chips provided by an embodiment of the present invention.
  • the sensor chip can be equipped with a feedback coil to change the magnetoresistance when the permanent magnetic film 108 is displaced.
  • the voltage/current change caused by the circuit is amplified and loaded on the feedback coil.
  • the magnetic thin film 108 changes equally, and the magnetic field in opposite directions makes the vibrating diaphragm move near the balance point to increase the measurement dynamic range of the inertial sensor.
  • the magnetoresistance inertial sensor chip can be provided with a planar etching coil 111, the planar etching coil 111 can be formed by a planar etching process, and the planar etching coil 111 is located on the upper surface of the vibrating diaphragm and is located The contact surface of the cavity and the vibrating diaphragm is perpendicular to the area outside the projection area.
  • the sensor chip can be provided with a wire-wound coil 112, and the magnetic shielding layer 107 can be covered above the reference magnetic resistor 109.
  • the winding coil 112 is located directly above the permanent magnetic film 108 or located directly below the permanent magnetic film 108 and arranged under the cavity 103 or in the cavity 103.
  • the permanent magnetic film can be one or more layers of hard magnetic materials, typical materials are CoPt, CoCrPt, FePt, or a composite unit composed of soft magnetic materials and antiferromagnetic materials [soft magnetic/antiferromagnetic]n, or soft Magnetic materials and hard magnetic materials form a composite unit to form [soft magnetic/hard magnetic] n, where n is a natural number, typical soft magnetic materials are FeCo and NiFe, and typical antiferromagnetic materials are PtMn and IrMn.
  • Figures 14a-14f are schematic diagrams of typical arrangements of permanent magnetic film materials. Specifically, as shown in Figs. 14a-14f, the permanent magnetic film may comprise: a single hard magnetic film 301 as shown in Fig.
  • FIG. 14a shows a situation where two hard magnetic films 301 and 302 are alternately stacked; a soft magnetic 304/antiferromagnetic 303 composite film as shown in Fig. 14c; and a multilayer overlap as shown in Fig. 14d [soft magnetic 304/ Anti-ferromagnetic 303]n film, as shown in Fig. 14(e), soft magnetic 304/hard magnetic composite film 301, and multilayer overlapping [soft magnetic 304/hard magnetic 301]n film as shown in Fig. 14f, Where n is a natural number.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

一种磁电阻惯性传感器芯片，包括基底（101）、振动隔膜（102，102'）、感应磁电阻（105）、至少一个永磁薄膜（108），振动隔膜（102，102'）覆盖在基底（101）的一侧表面，感应磁电阻（105）和永磁薄膜（108）设置于振动隔膜（102，102'）远离基底（101）的表面，在振动隔膜（102，102'）远离基底（101）的表面还设置有接触电极（106），感应磁电阻（105）通过连接引线（104）与接触电极（106）连接；基底（101）包括刻蚀形成的空腔（103），感应磁电阻与（105）、永磁薄膜（108）之一或者全部设置于空腔（103）在振动隔膜（102，102'）的垂直投影区域内。磁电阻惯性传感器芯片的永磁薄膜（108）产生的磁场在感应磁电阻（105）的灵敏度方向分量产生变化，使感应磁电阻（105）的阻值产生变化，从而造成输出电信号变化。磁电阻惯性传感器芯片利用磁电阻的高灵敏度及高频响特性，提高输出信号强度及频率响应，有利于微弱压力、振动或加速度及高频振动的检测。

Description

一种磁电阻惯性传感器芯片 技术领域
本发明涉及磁性传感器领域，特别涉及一种磁电阻惯性传感器芯片。
背景技术
近年来，用于测量加速度，振动，压力的惯性传感器芯片在各个领域得到广泛关注。其中振动传感器领域又可细分为固体振动检测，包括建筑振动，机械振动；液体振动检测，包括水听声纳；以及气体振动，包括麦克风应用等领域。现有的惯性传感器芯片，主要基于硅基电容型，压电型，硅基压阻型等原理，将加速度，振动，压力等待测力学物理量转换为电压或电流信号加以测量。其中硅基电容型温度稳定良好，灵敏度较高，温度稳定性较好，但响应频带较窄；压电型温度稳定性及时间稳定性优秀，线性范围宽，但灵敏度较低；硅基压阻型灵敏度高，动态响应大，可测量微小压力，但温度稳定性差；此外上述技术在针对20MHz以上频率振动信号检测基本为盲区。
磁电阻材料，具体而言包含具有钉扎层、自由层、非磁性隧道势垒层结构的隧道结磁电阻(TMR)，具有钉扎层、自由层、非磁性导电间隔层结构的巨磁电阻(GMR)，以及具有磁各向异性层结构的各项异性磁电阻(AMR)。磁电阻材料作为磁场检测元件，具有优秀的频率响应特性，良好的温度特性，以及高的灵敏度，结合适合的力学传递结构及励磁结构，可用于特定惯性参数测量。然而，惯性参数测量中，励磁结构和磁电阻元件分属空间不同平面的设计，除能简化部分生产工艺的优势外，会造成总体良率不高，测量线性区间减小，力学传递结构、励磁结构、磁电阻元件相对空间位置调整受限， 继而造成性能调整受限等诸多不足。
发明内容
针对目前加速度传感器对于微弱压力及高频振动检测信号微弱甚至无法检出的现状，本发明基于TMR/GMR/AMR磁电阻材料自身阻值对于外部磁场变化快速响应的特性，以及TMR/GMR/AMR自身优秀的温度特性，结合磁性或非磁性振动隔膜，提出一种能够测量微小高频振动，压力或加速度信号的高灵敏度高频测量的磁电阻惯性传感器芯片，该磁电阻惯性传感器芯片以磁电阻为敏感材料，将信号发射源永磁薄膜与信号接收源磁电阻设置于同一水平面，最大化信号线性区间，利用磁电阻对永磁薄膜磁场变化造成的电阻值变化，将机械运动转换为电信号，从而精确获得待测振动、加速度或压力信号。
本发明是根据以下技术方案实现的：
一种磁电阻惯性传感器芯片，其特征在于，包括基底、振动隔膜、感应磁电阻、至少一个永磁薄膜，其中：
所述振动隔膜覆盖在所述基底的一侧表面，所述感应磁电阻和所述永磁薄膜设置于所述振动隔膜远离所述基底的表面，在所述振动隔膜远离所述基底的表面还设置有接触电极，所述感应磁电阻通过连接引线与所述接触电极连接；
所述基底包括刻蚀形成的空腔，所述感应磁电阻与所述永磁薄膜之一或者全部设置于所述空腔在所述振动隔膜的垂直投影区域内，所述永磁薄膜产生的磁场在所述感应磁电阻的灵敏度方向分量产生变化，使所述感应磁电阻的阻值产生变化，从而造成输出电信号变化。
优选地，所述感应磁电阻设置于所述空腔在所述振动隔膜的垂直投影区域的以外区域，所述永磁薄膜设置于所述空腔在所述振动隔膜的垂直投影区域的中部位置，或
所述感应磁电阻设置于所述空腔在所述振动隔膜的垂直投影区域内的内 边沿，所述永磁薄膜设置于所述空腔在所述振动隔膜的垂直投影有区域的中部位置，或
所述感应磁电阻设置于所述空腔在所述振动隔膜的垂直投影区域的中部位置，所述永磁薄膜设置于所述空腔在所述振动隔膜的垂直投影区域的以外区域。
优选地，还包括参考磁电阻，所述参考磁电阻位于所述振动隔膜远离所述基底的表面，并设置于所述空腔在所述振动隔膜的垂直投影区域的以外区域，所述参考磁电阻和所述感应磁电阻通过封装引线连接为全桥或半桥结构。
优选地，所述参考磁电阻远离所述振动隔膜的一侧设置有包含软磁材料的磁屏蔽层，所述磁屏蔽层覆盖所述参考磁电阻。
优选地，所述参考磁电阻和所述感应磁电阻为隧道结磁阻、巨磁阻或各向异性磁阻。
优选地，还包括封装结构，所述封装结构由封装基板和封装外壳构成，所述基底位于由所述封装基板和所述封装外壳构成的腔体内，并固定在所述封装基板上。
优选地，所述封装外壳包括一层或多层由软磁材料构成的磁场屏蔽壳体，或者一层或多层由金属箔构成的电场屏蔽壳体或者由所述磁场屏蔽壳体和所述电场屏蔽壳体堆叠构成的壳体。
优选地，所述封装基板或所述封装外壳设置有至少一个开孔。
优选地，所述振动隔膜的厚度为0.001μm～1000μm，所述空腔与所述振动隔膜的接触面边沿为圆形、椭圆形、矩形或者平行四边形，所述空腔与所述振动隔膜的接触面的外切矩形长宽比的范围为20:1～1:1，其中所述接触面的外切矩形宽的范围为0.1μm～2000μm。
优选地，所述振动隔膜包括多个刻蚀形成的通孔。
优选地，所述永磁薄膜为一层或多层硬磁材料，或由软磁材料和反铁磁材料组成复合单元构成[软磁/反铁磁]n，或由软磁材料和硬磁磁材料组成复合单元构成[软磁/硬磁]n，其中n为自然数，硬磁材料包括CoPt、CoCrPt、 FePt中的至少一种，软磁材料包括FeCo、NiFe中的至少一种，反铁磁材料包括PtMn、IrMn中的至少一种。
优选地，所述永磁薄膜充磁方向在永磁薄膜平面内或垂直于永磁薄膜平面，所述感应磁电阻灵敏度方向在永磁薄膜平面内或垂直于永磁薄膜平面。
优选地，所述传感器芯片包含反馈线圈；
反馈线圈为平面刻蚀线圈，所述平面刻蚀线圈位于所述振动隔膜的远离所述基底一侧的表面，并设置于所述空腔在所述振动隔膜的垂直投影区域的以外区域，
或者所述反馈线圈为绕线线圈，所述绕线线圈位于所述永磁薄膜的正上方，或者位于所述永磁薄膜的正下方并设置在所述空腔的下方或者空腔内。
与现有技术相比，本发明具有以下有益技术效果：
本发明利用振动隔膜传导外界压力、振动或加速度的变化，使用磁电阻作为敏感材料，将振动隔膜机械运动转换为磁电阻阻值变化，将磁电阻元件和作为励磁结构的永磁薄膜设置于振动隔膜的同一表面，使磁电阻元件和永磁薄膜位于同一基准平面，方便力学传递结构振动隔膜、励磁结构永磁薄膜、磁电阻元件相对空间位置调整，有利于传感器输出信号线性区间以及传感器良率的提高；利用磁电阻的高灵敏度及高频响特性，提高输出信号强度及频率响应，有利于微弱压力、振动或加速度及高频振动的检测。
附图说明
通过阅读参照以下附图对非限制性实施例所作的详细描述，本发明的其它特征、目的和优点将会变得更明显：
图1是本发明实施例提供的一种磁电阻惯性传感器芯片的俯视图；
图2a是本发明实施例提供的一种磁电阻惯性传感器芯片的剖视图；
图2b是本发明实施例提供的另一种磁电阻惯性传感器芯片的剖视图；
图3是本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；
图4是本发明实施例提供的另一种磁电阻惯性传感器芯片的剖视图；
图5a是本发明实施例提供的另一种磁电阻惯性传感器的结构示意图；
图5b是本发明实施例提供的另一种磁电阻惯性传感器的结构示意图；
图5c是本发明实施例提供的另一种磁电阻惯性传感器的结构示意图；
图6a是本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；
图6b是本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；
图7a为本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；
图7b为本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；
图7c为本发明实施例提供的另一种磁电阻惯性传感器芯片的剖视图；
图8a和图8b为本发明实施例提供的另外两种磁电阻惯性传感器芯片的俯视图；
图9a-图9b为本发明实施例提供的另外两种磁电阻惯性传感器芯片的俯视图；
图10a-图10b为本发明实施例提供的另外两种磁电阻惯性传感器芯片的俯视图；
图11a-图11d为本发明实施例提供的磁电阻桥路连接方式示意图；
图12为本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；
图13a-图13c是本发明实施例提供的另外三种磁电阻惯性传感器芯片的结构示意图；
图14a-图14f分别为永磁薄膜材料典型设置示意图。
具体实施方式
下面结合具体实施例对本发明进行详细说明。以下实施例将有助于本领 域的技术人员进一步理解本发明，但不以任何形式限制本发明。应当指出的是，对本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变化和改进。这些都属于本发明的保护范围。
在本发明的描述中，需要理解的是，术语“径向”、“轴向”、“上”、“下”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“设置”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
现有技术中，磁电阻惯性传感器的永磁薄膜和感应磁电阻不在同一平面，二者为上下结构，因为振动结构材料局限，限制了相对上下位置的调整，又因为输出信号的线性性要求，限制了相对水平位置的调整，结果使设计结构非常受限。
基于上述问题，本发明实施例提供了一种磁电阻惯性传感器芯片。图1是本发明实施例提供的一种磁电阻惯性传感器芯片的俯视图，图2a是本发明实施例提供的一种磁电阻惯性传感器芯片的剖视图，图2a可对应图1沿剖面线A-A’方向的剖视图；图2b是本发明实施例提供的另一种磁电阻惯性传感 器芯片的剖视图，图2b可对应图1沿剖面线B-B’方向的剖视图；参考图1、图2a和图2b，磁电阻惯性传感器芯片包括基底101、振动隔膜(其中，图1中对应附图标记102’，图2a和图2b中对应附图标记102)、感应磁电阻105、至少一个永磁薄膜108。基底101为单晶硅、金属、陶瓷中的一种，振动隔膜覆盖在基底101的上表面，感应磁电阻105和永磁薄膜108设置于振动隔膜的上表面。可选的，振动隔膜的上表面和下表面为平面。在振动隔膜上表面设置接触电极106，感应磁电阻105通过连接引线104与接触电极106连接，基底101包括空腔103，其中空腔103可以通过对基底101进行刻蚀得到。空腔103位于振动隔膜下侧，感应磁电阻105与永磁薄膜108之一或者全部设置于空腔103在振动隔膜102的垂直投影区域内，当永磁薄膜108与感应磁电阻105产生相对位移时，永磁薄膜108产生的磁场在感应磁电阻105的灵敏度方向分量产生变化，使感应磁电阻105的阻值产生变化，从而造成输出电信号变化。需要说明的是，为使附图更加清楚，图1中只示出了与空腔对应部分的振动隔膜102’，图2a和图2b示出了整个振动隔膜102。以下实施例中也以附图标记102’代表与空腔对应部分的振动隔膜。
本发明实施例中，永磁薄膜108作为励磁结构，其与感应磁电阻105设置于振动隔膜的同一表面，使得永磁薄膜108和感应磁电阻105处于同一基准平面，因永磁薄膜108和感应磁电阻105对水平位置调整对信号线性性影响不大，故相比于传统磁电阻惯性传感器芯片，可以使得磁电阻惯性传感器芯片结构设计更加多样化，方便力学传递结构振动隔膜、励磁结构永磁薄膜、磁电阻元件相对空间位置调整。
需要说明的是，图1只是示意性地示出永磁薄膜108设置于振动隔膜中 部位置，感应磁电阻105设置于空腔103在振动隔膜的垂直投影区域的以外区域的情况，本发明实施例对感应磁电阻105和永磁薄膜108的位置不做具体限定，只要满足感应磁电阻105与永磁薄膜108之一或者全部设置于空腔103在振动隔膜的垂直投影位置区域内即可。
本实施例提供的磁电阻惯性传感器芯片，通过利用振动隔膜传导外界压力、振动或加速度的变化，使用磁电阻作为敏感材料，将振动隔膜机械运动转换为磁电阻阻值变化，将磁电阻元件和作为励磁结构的永磁薄膜设置于振动隔膜的同一表面，使磁电阻元件和永磁薄膜位于同一基准平面，方便力学传递结构振动隔膜、励磁结构永磁薄膜、磁电阻元件相对空间位置调整，有利于传感器输出信号线性区间以及传感器良率的提高；利用磁电阻的高灵敏度及高频响特性，提高输出信号强度及频率响应，有利于微弱压力、振动或加速度及高频振动的检测。
对永磁薄膜磁场变化敏感的磁电阻为感应磁电阻，对永磁薄膜磁场变化不敏感的磁电阻为参考磁电阻，设置参考磁电阻与永磁薄膜件间隔一定距离，进而减弱永磁薄膜磁场对参考磁电阻的影响，必要时，在参考磁电阻上覆盖由软磁材料构成的磁屏蔽层107消除磁场影响，保证参考磁电阻阻值稳定。
图3是本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图，图4是本发明实施例提供的另一种磁电阻惯性传感器芯片的剖视图，图4可对应图3沿剖面线C-C’方向的剖视图。参考图3和图4，本发明的传感器芯片还包括参考磁电阻109，参考磁电阻109位于振动隔膜的上表面，并设置于空腔103在振动隔膜的垂直投影区域的以外区域，本发明的参考磁电阻109和感应磁电阻105通过封装引线连接为全桥或半桥结构，或者由感应磁电阻单 独构成单臂的结构。
继续参考图3和图4，参考磁电阻109上方覆盖一层包含软磁材料的磁屏蔽层107，进而屏蔽永磁薄膜108产生的磁场变化对参考磁电阻109的阻值的影响。
根据本发明的一个具体实施例，本发明的参考磁电阻109和感应磁电阻105采用为隧道结磁阻、巨磁阻或各向异性磁阻。
本发明永磁薄膜充磁方向在永磁薄膜平面内或垂直于永磁薄膜平面，感应磁电阻灵敏度方向在永磁薄膜平面内或垂直于永磁薄膜平面。结合图4所示，根据本发明的一个具体实施例，本发明的感应磁电阻灵敏度方向沿Y方向设置，同时永磁薄膜沿Z方向充磁，磁电阻用于检测当外界压力、振动或加速度造成永磁薄膜沿Z方向发生位移时，磁电阻位置磁场在Y方向的分量，通过确定位移变化来检测压力/振动/加速度。磁电阻灵敏度方向及永磁薄膜充磁方向均可沿垂直于振动隔膜平面方向或隔膜平面内任意方向。
图5a是本发明实施例提供的另一种磁电阻惯性传感器的结构示意图，图5b是本发明实施例提供的另一种磁电阻惯性传感器的结构示意图，图5c是本发明实施例提供的另一种磁电阻惯性传感器的结构示意图。参考图5a-5c所示，根据本发明的具体实施例，本发明的传感器芯片还包括封装结构，其封装结构由封装基板202和封装外壳201构成，基底101位于由所述封装基板202和所述封装外壳201构成的腔体内，并固定在所述封装基板202上。
封装结构上可设置一个或多个开孔203，用于传递外界压力或振动。当需要传递声波振动(例如麦克风)或液体/气体压力时，需要封装体开孔，让液体/气体接触到芯片。测量加速度不需要开孔。根据本发明的具体实施例，可根 据实际应用场合的需要在封装基板202或者封装外壳201设置一个或多个开孔203，根据图5a-图5c所示，其中图5a为无开孔封装结构，图5b为开孔位于封装外壳上，图5c为开孔位于封装基板上。
此外，本发明的封装外壳201采用一层或多层由软磁材料构成的磁场屏蔽壳体，或者一层或多层由金属箔构成的电场屏蔽壳体或者由所述磁场屏蔽壳体和所述电场屏蔽壳体堆叠构成的壳体，可根据实际需要进行选择。
图6a是本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图，图6b是本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图。图1、图6a和图6b为本发明三种典型隧道结磁阻惯性传感器俯视图。其中沿X方向排布R1，R3为感应磁电阻串，R2，R4为参考磁电阻串，由接触电极106引出信号。如图1以及图6a，振动隔膜中央部位可设置永磁薄膜，充磁方向垂直与永磁隔膜表面或平行于任一对永磁隔膜边沿。如图6a感应磁电阻可位于在振动隔膜的垂直投影区域的以外区域，或图1磁电阻可位于空腔在振动隔膜的垂直投影区域内的内边沿区域。振动隔膜收到外界振动/加速度/压力影响，带动永磁薄膜沿垂直于隔膜方向运动，造成磁电阻处磁场强度变化，从而引起磁电阻阻值变化。或如图6b磁电阻设置于空腔投影以内中央部位，永磁薄膜设置于空腔在振动隔膜的垂直投影区域以外，隔膜收到外界振动/加速度/压力影响，沿垂直于隔膜方向运动，造成隔膜上磁电阻与永磁薄膜相对位移，使得磁电阻处磁场强度变化，从而引起磁电阻阻值变化。
同时参考附图4，在空腔以外位置设置参考磁电阻R2、R4，参考磁电阻不受永磁薄膜产生磁场影响，在永磁薄膜产生位移造成磁场变化时保持阻值不变，参考磁电阻上方可覆盖磁屏蔽层以降低磁场变化的影响。在应用场景 需要时，R1，R3联结为全桥或半桥形式，将振动转变为电信号输出。当加速度计算时，当R1、R3构成一支路,R2、R4构成一支路,搭建为全桥时，如加速度造成永磁薄膜位移，导致R1、R3所构成支路电阻增加，R2、R4所构成支路电阻不变，全桥电压信号由零变为某正值，即得到R1、R3支路处磁场变化量，通过磁场位移关系，反推永磁薄膜位移量，结合造成该位移量的时间，即可得到加速度。
图7a为本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；图7b为本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；图7c为本发明实施例提供的另一种磁电阻惯性传感器芯片的剖视图。参考图7a-图7c，振动隔膜102刻蚀有多个通孔110，从而提高振动传递效率。通孔110在振动隔膜上投影与磁电阻及其引线、电极投影无重叠，由于开孔在设置磁电阻及导线之后，否则造成磁电阻及导线所在区域无法设置开孔，否则磁电阻及导线将被打掉。
图8a和图8b为本发明实施例提供的另外两种磁电阻惯性传感器芯片的俯视图；图9a和图9b为本发明实施例提供的另外两种磁电阻惯性传感器芯片的俯视图；参考图8a-图8b以及图9a-图9b所示，为本发明典型各项异性磁阻/巨磁阻惯性传感器俯视图。磁电阻为条状或蛇形排布，并由电极引出磁电阻变化信号。振动隔膜中央部位可设置永磁薄膜，充磁方向垂直与隔膜表面或平行于任一对隔膜边沿。隔膜收到外界振动/加速度/压力影响，带动永磁薄膜沿垂直于隔膜方向运动，造成磁电阻处磁场强度变化，从而引起磁电阻阻值变化。或者将磁电阻设置于空腔投影以内中央部位，永磁薄膜设置于空腔在振动隔膜的垂直投影区域以外，隔膜收到外界振动/加速度/压力影响， 沿垂直于隔膜方向运动，造成隔膜上磁电阻与永磁薄膜相对位移，使得磁电阻处磁场强度变化，从而引起磁电阻阻值变化。同时，在空腔以外位置设置参考磁电阻R2、R4，参考磁电阻不受永磁薄膜产生磁场影响，在振动隔膜产生振动时保持阻值不变，必要时，参考磁电阻R2、R4上方可设置磁屏蔽层。在应用场景需要时，参考电阻R2、R4与感应磁电阻R1，R3联结为参考全桥或参考半桥形式，将振动转变为电信号输出。
图10a-图10b为本发明实施例提供的另外两种磁电阻惯性传感器芯片的俯视图。振动隔膜的厚度可选择为0.001μm～1000μm，空腔与振动隔膜的接触面边沿为圆形、椭圆形、矩形或者平行四边形，空腔与振动隔膜的接触面的外切矩形长宽比的范围为20:1～1:1，其中所述接触面的外切矩形宽的范围为0.1μm～2000μm。参考图10a-图10b，根据本发明的具体实施例，空腔与振动隔膜的接触面边沿为圆形构造时，磁电阻及永磁薄膜以弧形排布分别设置于空腔投影内部及外部的情况，其工作原理与联结方式与矩形隔膜设计中一致。参考磁电阻R2、R4上方可覆盖磁屏蔽层。
图11a-图11d为本发明实施例提供的磁电阻桥路连接方式示意图。参考图11a-图11d，磁电阻惯性传感器芯片中，感应磁电阻和参考磁电阻的联结方式包括参考全桥、参考半桥、推挽半桥，或者由感应磁电阻单独构成单臂结构。
图12本发明实施例提供的另一种磁电阻惯性传感器芯片的俯视图；图13a-图13c是本发明实施例提供的另外三种磁电阻惯性传感器芯片的结构示意图。参考图12以及图13a-图13c，传感器芯片可设置反馈线圈，将永磁薄膜108发生位移时造成磁电阻变化，从而带来的电压/电流变化经电路放大 后，加载于反馈线圈产生与永磁薄膜108变化相等，方向相反的磁场，使得振动隔膜位于平衡点附件移动，以增大惯性传感器的测量动态范围。
其中如图12所示，磁电阻惯性传感器芯片可以设置平面刻蚀线圈111，平面刻蚀线圈111可通过平面刻蚀工艺形成，平面刻蚀线圈111位于所述振动隔膜的上表面，并设置于所述空腔与所述振动隔膜的接触面垂直投影区域的以外区域。
如图13a-图13c所示，传感器芯片可以设置绕线线圈112，同时参考磁电阻109上方可覆盖磁屏蔽层107。绕线线圈112位于永磁薄膜108的正上方，或者位于所述永磁薄膜108的正下方并设置在所述空腔103的下方或者空腔103内。
永磁薄膜可以为一层或多层硬磁材料，典型材料为CoPt，CoCrPt，FePt，或由软磁材料和反铁磁材料组成复合单元构成[软磁/反铁磁]n，或由软磁材料和硬磁磁材料组成复合单元构成[软磁/硬磁]n，其中n为自然数，软磁材料的典型材料FeCo、NiFe，反铁磁材料的典型材料为PtMn、IrMn。图14a-图14f分别为永磁薄膜材料典型设置示意图。具体地，如图14a-图14f所示，永磁薄膜的构成可包含：如图14a所示的单一硬磁薄膜301，或者如图14b所示的两种或多种复合硬磁薄膜，图14b示出了包括两种硬磁薄膜301和302交替堆叠的情况；如图14c所示的软磁304/反铁磁303复合薄膜；如图14d所示的多层交叠[软磁304/反铁磁303]n薄膜，如图14(e)所示的软磁304/硬磁复合薄膜301，以及如图14f所示的多层交叠[软磁304/硬磁301]n薄膜，其中n为自然数。
基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前 提下所获得的所有其它实施例，都属于本发明保护的范围。尽管本发明就优选实施方式进行了示意和描述，但本领域的技术人员应当理解，只要不超出本发明的权利要求所限定的范围，可以对本发明进行各种变化和修改。

Claims (13)

  1. 一种磁电阻惯性传感器芯片，其特征在于，包括基底、振动隔膜、感应磁电阻、至少一个永磁薄膜，其中：
    所述振动隔膜覆盖在所述基底的一侧表面，所述感应磁电阻和所述永磁薄膜设置于所述振动隔膜远离所述基底的表面，在所述振动隔膜远离所述基底的表面还设置有接触电极，所述感应磁电阻通过连接引线与所述接触电极连接；
    所述基底包括刻蚀形成的空腔，所述感应磁电阻与所述永磁薄膜之一或者全部设置于所述空腔在所述振动隔膜的垂直投影区域内，所述永磁薄膜产生的磁场在所述感应磁电阻的灵敏度方向分量产生变化，使所述感应磁电阻的阻值产生变化，从而造成输出电信号变化。
  2. 根据权利要求1所述的磁电阻惯性传感器芯片，其特征在于，所述感应磁电阻设置于所述空腔在所述振动隔膜的垂直投影区域的以外区域，所述永磁薄膜设置于所述空腔在所述振动隔膜的垂直投影区域的中部位置，或
    所述感应磁电阻设置于所述空腔在所述振动隔膜的垂直投影区域内的内边沿，所述永磁薄膜设置于所述空腔在所述振动隔膜的垂直投影有区域的中部位置，或
    所述感应磁电阻设置于所述空腔在所述振动隔膜的垂直投影区域的中部位置，所述永磁薄膜设置于所述空腔在所述振动隔膜的垂直投影区域的以外区域。
  3. 根据权利要求1所述的磁电阻惯性传感器芯片，其特征在于，还包括参考磁电阻，所述参考磁电阻位于所述振动隔膜远离所述基底的表面，并设置于所述空腔在所述振动隔膜的垂直投影区域的以外区域，所述参考磁电阻和所述感应磁电阻通过封装引线连接为全桥或半桥结构。
  4. 根据权利要求3所述的磁电阻惯性传感器芯片，其特征在于，所述参考磁电阻远离所述振动隔膜的一侧设置有包含软磁材料的磁屏蔽层，所述磁屏蔽层覆盖所述参考磁电阻。
  5. 根据权利要求3或4所述的磁电阻惯性传感器芯片，其特征在于，所述参考磁电阻和所述感应磁电阻为隧道结磁阻、巨磁阻或各向异性磁阻。
  6. 根据权利要求1所述的磁电阻惯性传感器芯片，其特征在于，还包括封装结构，所述封装结构由封装基板和封装外壳构成，所述基底位于由所述封装基板和所述封装外壳构成的腔体内，并固定在所述封装基板上。
  7. 根据权利要求6所述的磁电阻惯性传感器芯片，其特征在于，所述封装外壳包括一层或多层由软磁材料构成的磁场屏蔽壳体，或者一层或多层由金属箔构成的电场屏蔽壳体或者由所述磁场屏蔽壳体和所述电场屏蔽壳体堆叠构成的壳体。
  8. 根据权利要求6中所述的磁电阻惯性传感器芯片，其特征在于，所述封装基板或所述封装外壳设置有至少一个开孔。
  9. 根据权利要求1中所述的磁电阻惯性传感器芯片，其特征在于，所述振动隔膜的厚度为0.001μm～1000μm，所述空腔与所述振动隔膜的接触面边沿为圆形、椭圆形、矩形或者平行四边形，所述空腔与所述振动隔膜的接触面的外切矩形长宽比的范围为20:1～1:1，其中所述接触面的外切矩形宽的范围为0.1μm～2000μm。
  10. 根据权利要求1或9中所述的磁电阻惯性传感器芯片，其特征在于，所述振动隔膜包括多个刻蚀形成的通孔。
  11. 根据权利要求1或2中所述的磁电阻惯性传感器芯片，其特征在于，所述永磁薄膜为一层或多层硬磁材料，或由软磁材料和反铁磁材料组成复合单元构成[软磁/反铁磁]n，或由软磁材料和硬磁磁材料组成复合单元构成[软磁/硬磁]n，其中n为自然数，硬磁材料包括CoPt、CoCrPt、FePt中的至少一种，软磁材料包括FeCo、NiFe中的至少一种，反铁磁材料包括PtMn、IrMn中的至少一种。
  12. 根据权利要求1或2中所述的磁电阻惯性传感器芯片，其特征在于，所述永磁薄膜充磁方向在永磁薄膜平面内或垂直于永磁薄膜平面，所述感应磁电阻灵敏度方向在永磁薄膜平面内或垂直于永磁薄膜平面。
  13. 根据权利要求1所述的磁电阻惯性传感器芯片，其特征在于，所述传感器芯片包含反馈线圈；
    反馈线圈为平面刻蚀线圈，所述平面刻蚀线圈位于所述振动隔膜的远离所述基底一侧的表面，并设置于所述空腔在所述振动隔膜的垂直投影区域的以外区域，
    或者所述反馈线圈为绕线线圈，所述绕线线圈位于所述永磁薄膜的正上方，或者位于所述永磁薄膜的正下方并设置在所述空腔的下方或者空腔内。
PCT/CN2020/081618 2019-04-02 2020-03-27 一种磁电阻惯性传感器芯片 Ceased WO2020200076A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US17/594,149 US11940299B2 (en) 2019-04-02 2020-03-27 Magnetoresistive inertial sensor chip
JP2021558868A JP7188824B2 (ja) 2019-04-02 2020-03-27 磁気抵抗慣性センサ・チップ
EP20784217.0A EP3954972B1 (en) 2019-04-02 2020-03-27 Magnetoresistive inertial sensor chip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910262361.6 2019-04-02
CN201910262361.6A CN109883456B (zh) 2019-04-02 2019-04-02 一种磁电阻惯性传感器芯片

Publications (1)

Publication Number Publication Date
WO2020200076A1 true WO2020200076A1 (zh) 2020-10-08

Family

ID=66935818

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/081618 Ceased WO2020200076A1 (zh) 2019-04-02 2020-03-27 一种磁电阻惯性传感器芯片

Country Status (5)

Country Link
US (1) US11940299B2 (zh)
EP (1) EP3954972B1 (zh)
JP (1) JP7188824B2 (zh)
CN (1) CN109883456B (zh)
WO (1) WO2020200076A1 (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113075726A (zh) * 2021-05-10 2021-07-06 联合微电子中心有限责任公司 水听器及其制造方法
CN113092885A (zh) * 2021-04-09 2021-07-09 中国科学院空天信息创新研究院 压阻式微型电场传感器及其制备方法、电场传感器
WO2022183827A1 (zh) * 2021-03-01 2022-09-09 歌尔微电子股份有限公司 传感器和电子设备
CN116165576A (zh) * 2022-12-23 2023-05-26 南方电网数字电网研究院有限公司 TMRz轴磁场传感器
US11940299B2 (en) 2019-04-02 2024-03-26 MultiDimension Technology Co., Ltd. Magnetoresistive inertial sensor chip
CN118074694A (zh) * 2024-04-17 2024-05-24 江苏多维科技有限公司 一种微动开关
CN118443968A (zh) * 2024-04-03 2024-08-06 天津大学 隧道磁阻加速度计

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110455401B (zh) * 2019-08-28 2021-10-19 江苏多维科技有限公司 一种高灵敏度磁阻声波传感器及阵列装置
CN111473806B (zh) 2020-04-17 2022-04-05 江苏多维科技有限公司 一种毛细管道环境传感器及其制备方法
CN111854925B (zh) * 2020-06-24 2022-09-16 歌尔微电子有限公司 微机电系统绝对压力传感器、传感器单体及电子设备
CN114061577B (zh) * 2020-07-31 2023-11-24 江苏多维科技有限公司 一种微惯性测量单元
CN114370888B (zh) * 2020-10-15 2023-09-19 江苏多维科技有限公司 一种磁编码器芯片
CN113124846A (zh) * 2021-05-21 2021-07-16 北京信息科技大学 半桥式推挽流z轴薄膜陀螺及其加工方法
CN114243242A (zh) * 2021-12-17 2022-03-25 江苏多维科技有限公司 一种电屏蔽的磁隧道结信号隔离器
CN114739541B (zh) * 2022-04-11 2024-12-20 中国科学院宁波材料技术与工程研究所 一种柔性触觉传感器及其应用
CN115079061B (zh) * 2022-05-05 2025-04-29 歌尔微电子股份有限公司 微机电系统差分磁传感器、传感器单体及电子设备
CN115348515B (zh) * 2022-07-20 2026-03-13 青岛歌尔智能传感器有限公司 微机电系统磁传感器单体、其校准和制造方法及电子设备
CN115507995B (zh) * 2022-10-11 2025-06-17 中国人民解放军空军工程大学 倒立摆式双分量气流壁面摩擦阻力传感器
CN116301450B (zh) * 2023-03-25 2026-02-06 广东省旭日高新技术有限公司 一种电阻式触摸屏及其生产方法
CN116295956B (zh) * 2023-03-27 2026-03-20 河北工业大学 一种基于铁钴钒和环氧树脂的触觉传感阵列
CN118050540B (zh) * 2024-01-31 2024-12-13 南京高华科技股份有限公司 一种mems压阻式加速度计及其制备方法
CN120185330B (zh) * 2025-05-22 2025-08-19 启元实验室 集成磁传感器的电磁mems执行器的位移控制系统及制备方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1571582A (zh) * 2004-04-26 2005-01-26 清华大学 基于磁电阻效应的微声学器件
US20050252293A1 (en) * 2004-05-11 2005-11-17 Samsung Electronics Co., Ltd. Magnetic MEMS device and method of forming thereof
CN102721427A (zh) * 2012-06-20 2012-10-10 无锡乐尔科技有限公司 一种薄膜磁阻传感器元件及薄膜磁阻电桥
CN102854339A (zh) * 2012-09-07 2013-01-02 中北大学 一种硅基巨磁阻效应微加速度传感器
CN103076577A (zh) * 2012-08-03 2013-05-01 陈磊 一种检测磁场和加速度的传感器芯片设计与制造技术
US20140026661A1 (en) * 2012-07-27 2014-01-30 Biao Zhang Mems device
CN107131819A (zh) * 2017-06-12 2017-09-05 中北大学 基于隧道磁阻效应的单轴微机械位移传感器
CN109211281A (zh) * 2018-08-06 2019-01-15 歌尔股份有限公司 一种传感器
CN109246566A (zh) * 2018-10-09 2019-01-18 歌尔股份有限公司 Mems传感器
CN109883456A (zh) * 2019-04-02 2019-06-14 江苏多维科技有限公司 一种磁电阻惯性传感器芯片
CN109941956A (zh) * 2019-02-25 2019-06-28 歌尔股份有限公司 Mems传感器及电子设备
CN209605842U (zh) * 2019-04-02 2019-11-08 江苏多维科技有限公司 一种磁电阻惯性传感器芯片

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4840183A (en) * 1987-08-13 1989-06-20 Tdk Corporation Electrocardiograph
US5497082A (en) * 1995-01-25 1996-03-05 Honeywell Inc. Quadrature detector with a hall effect element and a magnetoresistive element
US6507187B1 (en) * 1999-08-24 2003-01-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ultra-sensitive magnetoresistive displacement sensing device
SG106612A1 (en) * 2001-05-29 2004-10-29 Sony Electronics Singapore Pte A force sensing device
US7505233B2 (en) * 2004-12-15 2009-03-17 International Business Machines Corporation Magnetic sensor
JP2008224486A (ja) * 2007-03-14 2008-09-25 Alps Electric Co Ltd 磁気式圧力センサ
US8026715B2 (en) * 2008-10-03 2011-09-27 International Business Machines Corporation Magneto-resistance based nano-scale position sensor
JP2010113782A (ja) * 2008-11-10 2010-05-20 Hitachi Global Storage Technologies Netherlands Bv 出力をバランス化した差動型再生磁気ヘッド及びその製造方法
CN101769784B (zh) * 2008-12-27 2012-06-20 鸿富锦精密工业（深圳）有限公司 感测器组合
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
US8018229B1 (en) * 2010-04-22 2011-09-13 Honeywell International Inc. Structure and method for flex circuit on a chip
CN102226835A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
CN102621504B (zh) * 2011-04-21 2013-09-04 江苏多维科技有限公司 单片参考全桥磁场传感器
CN102426344B (zh) * 2011-08-30 2013-08-21 江苏多维科技有限公司 三轴磁场传感器
ITTO20120614A1 (it) * 2012-07-11 2014-01-12 St Microelectronics Srl Sensore magnetoresistivo integrato multistrato e relativo metodo di fabbricazione
ITTO20121067A1 (it) * 2012-12-12 2014-06-13 St Microelectronics Srl Sensore magnetoresistivo integrato in una piastrina per il rilevamento di campi magnetici perpendicolari alla piastrina nonche' suo procedimento di fabbricazione
CN203279151U (zh) * 2013-05-08 2013-11-06 杭州百事特电子有限公司 脉冲波形驱动器及电磁式蜂鸣器
JP6113581B2 (ja) * 2013-06-12 2017-04-12 株式会社東芝 圧力センサ、音響マイク、血圧センサ及びタッチパネル
JP6173855B2 (ja) * 2013-09-20 2017-08-02 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
JP6074344B2 (ja) * 2013-09-20 2017-02-01 株式会社東芝 圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
CN104034454B (zh) * 2014-06-13 2016-05-25 江苏多维科技有限公司 一种用于多物理量测量的传感器芯片及其制备方法
DE102014109701A1 (de) * 2014-07-10 2016-01-14 Epcos Ag Sensor
CN104779213B (zh) * 2015-04-16 2017-12-15 歌尔股份有限公司 集成传感器的封装结构和封装方法
JP6421101B2 (ja) * 2015-09-09 2018-11-07 株式会社東芝 センサ、情報端末、マイクロフォン、血圧センサ及びタッチパネル
US10555088B2 (en) * 2016-11-18 2020-02-04 Akustica, Inc. MEMS microphone system having an electrode assembly
JP6753882B2 (ja) * 2018-03-01 2020-09-09 株式会社東芝 センサ、マイクロフォン、血圧センサ及びタッチパネル

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1571582A (zh) * 2004-04-26 2005-01-26 清华大学 基于磁电阻效应的微声学器件
US20050252293A1 (en) * 2004-05-11 2005-11-17 Samsung Electronics Co., Ltd. Magnetic MEMS device and method of forming thereof
CN102721427A (zh) * 2012-06-20 2012-10-10 无锡乐尔科技有限公司 一种薄膜磁阻传感器元件及薄膜磁阻电桥
US20140026661A1 (en) * 2012-07-27 2014-01-30 Biao Zhang Mems device
CN103076577A (zh) * 2012-08-03 2013-05-01 陈磊 一种检测磁场和加速度的传感器芯片设计与制造技术
CN102854339A (zh) * 2012-09-07 2013-01-02 中北大学 一种硅基巨磁阻效应微加速度传感器
CN107131819A (zh) * 2017-06-12 2017-09-05 中北大学 基于隧道磁阻效应的单轴微机械位移传感器
CN109211281A (zh) * 2018-08-06 2019-01-15 歌尔股份有限公司 一种传感器
CN109246566A (zh) * 2018-10-09 2019-01-18 歌尔股份有限公司 Mems传感器
CN109941956A (zh) * 2019-02-25 2019-06-28 歌尔股份有限公司 Mems传感器及电子设备
CN109883456A (zh) * 2019-04-02 2019-06-14 江苏多维科技有限公司 一种磁电阻惯性传感器芯片
CN209605842U (zh) * 2019-04-02 2019-11-08 江苏多维科技有限公司 一种磁电阻惯性传感器芯片

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3954972A4 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11940299B2 (en) 2019-04-02 2024-03-26 MultiDimension Technology Co., Ltd. Magnetoresistive inertial sensor chip
WO2022183827A1 (zh) * 2021-03-01 2022-09-09 歌尔微电子股份有限公司 传感器和电子设备
CN113092885A (zh) * 2021-04-09 2021-07-09 中国科学院空天信息创新研究院 压阻式微型电场传感器及其制备方法、电场传感器
CN113092885B (zh) * 2021-04-09 2023-11-24 中国科学院空天信息创新研究院 压阻式微型电场传感器及其制备方法、电场传感器
CN113075726A (zh) * 2021-05-10 2021-07-06 联合微电子中心有限责任公司 水听器及其制造方法
CN116165576A (zh) * 2022-12-23 2023-05-26 南方电网数字电网研究院有限公司 TMRz轴磁场传感器
CN116165576B (zh) * 2022-12-23 2023-12-12 南方电网数字电网研究院有限公司 TMRz轴磁场传感器
CN118443968A (zh) * 2024-04-03 2024-08-06 天津大学 隧道磁阻加速度计
CN118074694A (zh) * 2024-04-17 2024-05-24 江苏多维科技有限公司 一种微动开关

Also Published As

Publication number Publication date
EP3954972A1 (en) 2022-02-16
US11940299B2 (en) 2024-03-26
CN109883456A (zh) 2019-06-14
EP3954972A4 (en) 2022-12-14
EP3954972B1 (en) 2025-12-17
JP7188824B2 (ja) 2022-12-13
JP2022528407A (ja) 2022-06-10
CN109883456B (zh) 2024-06-28
US20220155105A1 (en) 2022-05-19

Similar Documents

Publication Publication Date Title
WO2020200076A1 (zh) 一种磁电阻惯性传感器芯片
JP6438959B2 (ja) 単一チップｚ軸線形磁気抵抗センサ
CN101065721B (zh) 用于输入设备的磁传感器
CN103116144B (zh) 一种采用磁变轨结构的z向磁场传感器
CN102914394B (zh) Mems巨磁阻式高度压力传感器
CN103323794B (zh) 一种采用平面微线圈的gmr-mems集成弱磁传感器
JP2014512003A (ja) シングルチッププッシュプルブリッジ型磁界センサ
CN103105592A (zh) 单芯片三轴磁场传感器及制备方法
CN117075008B (zh) 多轴磁场传感器以及多轴磁场传感器芯片
CN111624525A (zh) 一种利用磁性应力调控抑制磁噪声的一体化三轴磁传感器
CN101475139A (zh) Mems水平谐振式磁强计
KR20150102052A (ko) 자기 센서 장치, 자기 감응 방법 및 그 제조 방법
JP7364291B2 (ja) 高感度を有する磁気抵抗音波センサ、およびそのアレイ・デバイス
CN107449410A (zh) 电磁驱动式隧道磁阻面内检测微陀螺装置
CN110243394B (zh) 基于智能材料的谐振式传感器
CN209605842U (zh) 一种磁电阻惯性传感器芯片
CN102928132B (zh) 隧道磁阻压力传感器
CN202853817U (zh) Mems隧道磁阻高度压力传感器
CN107131819B (zh) 基于隧道磁阻效应的单轴微机械位移传感器
CN202853815U (zh) Mems巨磁阻式高度压力传感器
WO2021209004A1 (zh) 一种微机电环境传感器及其制备方法
CN102279373A (zh) 一种单轴静电驱动的弱磁场测量传感器
JP2005221418A (ja) 圧力センサ
CN115856725B (zh) 磁传感器
CN207395750U (zh) 电磁驱动式隧道磁阻面内检测微陀螺装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20784217

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021558868

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2020784217

Country of ref document: EP

Effective date: 20211102

WWG Wipo information: grant in national office

Ref document number: 2020784217

Country of ref document: EP