WO2020201005A1 - Module semi-conducteur et procédé destiné à le fabriquer - Google Patents

Module semi-conducteur et procédé destiné à le fabriquer Download PDF

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Publication number
WO2020201005A1
WO2020201005A1 PCT/EP2020/058532 EP2020058532W WO2020201005A1 WO 2020201005 A1 WO2020201005 A1 WO 2020201005A1 EP 2020058532 W EP2020058532 W EP 2020058532W WO 2020201005 A1 WO2020201005 A1 WO 2020201005A1
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WO
WIPO (PCT)
Prior art keywords
metal body
shaped metal
semiconductor module
structuring
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2020/058532
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English (en)
Inventor
David Benning
André Bastos Abibe
Martin Becker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss Silicon Power GmbH
Original Assignee
Danfoss Silicon Power GmbH
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Filing date
Publication date
Application filed by Danfoss Silicon Power GmbH filed Critical Danfoss Silicon Power GmbH
Publication of WO2020201005A1 publication Critical patent/WO2020201005A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/533—Cross-sectional shape
    • H10W72/534—Cross-sectional shape being rectangular
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present invention relates to a semiconductor module comprising a shaped metal body fixed to an upper surface of a semiconductor having a lower sur face that is sintered onto a top layer of a substrate.
  • the invention also relates to a method for manufacturing a semiconductor module.
  • Modern power electronics applies solid-state electronics to control and convert electric power with semiconductor switching devices such as diodes, thyristors and transistors. In contrast to electronic systems that are configured to trans mit and process signals and data, in power electronics substantial amounts of electrical energy are processed.
  • More and more applications are adopting power electronics technologies to improve energy efficiency, reliability, and control .
  • Semiconductor components are essential for power semiconductors and, since such components are sen sitive to high temperatures, to avoid device failure due to thermal runaway, effective cooling is required.
  • air-cooling provides a simple, low cost, effective, and reliable cool ing solution.
  • the prior air cooling technology may not be sufficient.
  • the semiconductor module according to the invention is a semiconductor module comprising a shaped metal body fixed to an upper surface of a semi conductor having a lower surface that is sintered onto a top layer of a sub strate, wherein the shaped metal body comprises a top surface provided with surface structuring that increases the surface area of the top surface.
  • the shaped metal body is at tached to the upper surface of the semiconductor by means of a sintering layer.
  • the sintering technology of the invention may use a silver-based paste to connect the respective elements.
  • Silver is thermally very stable, suffering from virtually no creep effects in power module service temperatures. This provides a considerable advantage over the standard solder technology using low-melting temperature metals for connecting chips to substrates or other elements.
  • the temperatures in power modules are in the range of creep effects for solder alloys, meaning that they can crack and/or deform easily in service.
  • a soldering process requires a subsequent process step to clean the surface from unwanted chemicals. This is not required in a sintering process.
  • the surface structuring may be of any suitable type as long as it increases the surface area of the top surface.
  • the increased surface area of the top surface increases the cooling capacity of the top surface. Accordingly, it is an ad vantage to have a surface structuring that increases the surface area of the top surface to a large extent.
  • the surface structuring increases the surface area of that portion of the top surface at which the surface structuring is provided, with at least 10 %.
  • the surface structuring increases the surface area of that portion of the top surface at which the surface structuring is provided, with at least 25 %.
  • the surface structuring increases the surface area of that portion of the top surface at which the surface structuring is provided, with at least 40 %.
  • the surface structuring increases the surface area of that portion of the top surface at which the surface structuring is provided, with at least 50 %.
  • the surface structuring increases the surface area of that portion of the top surface at which the surface structuring is provided, with more than 50 %.
  • the semiconductor module may be a power module for automotive, solar, wind or industrial applications.
  • the shaped metal body may be a plate-shaped metal body.
  • the shaped metal body is made of copper.
  • the shaped metal body is a copper foil.
  • the semiconductor module is a power module.
  • the shaped metal body is fixed to an upper surface of the semiconductor, the semiconductor having a lower surface being sintered onto a top layer of the substrate.
  • the semiconductor module comprises an encapsulation that is brought into thermal contact with the surface structuring, wherein the encapsulation covers at least a portion the surface structuring and is electri cally insulating and thermally conductive.
  • thermally conductive encapsulation By applying a thermally conductive encapsulation, it is possible to increase the heat transfer coefficient of the media (encapsulation) covering the surface structuring and thus enhance the cooling capacity of the surface structuring. Accordingly, it advantageous to apply an encapsulation having a thermal con ductance that is higher than a predefined level such as more than 0.1 W/mK.
  • the electrically insulating and thermally conductive en capsulation has a thermal conductance in the range 0.1-15 W/mK.
  • the electrically insulating and thermally conductive en capsulation has a thermal conductance in the range 0.15-10 W/mK. In one embodiment, the electrically insulating and thermally conductive en capsulation is made of epoxy, preferably epoxy having a thermal conductance in the range 1 to 10 W/mK.
  • the electrically insulating and thermally conductive en capsulation is made of, preferably silicone having a thermal conductance in the range 0.17 W/mK up to 3 W/mK.
  • the electrically insulating and thermally conductive en capsulation is made of cement, preferably cement having a thermal conduct ance in the range with 2-10 W/mK.
  • the electrically insulating and thermally conductive en capsulation is a cement-ceramic encapsulation material comprising a calcium aluminate cement matrix.
  • the cement-ceramic encapsu lation material may comprise alumina fillers.
  • the encapsulation covers the entire surface structuring.
  • the thermal conductance of the encapsulation is in the range 0.17-10 W/mK.
  • the encapsulation has a dielectric strength of at least 10 kV/mm.
  • the height of the encapsulation is more than two times larger than the height of the surface structuring.
  • the height of the encapsulation is more than four times larger than the height of the surface structuring.
  • one or more wire bonds or ribbon bonds are attached to the shaped metal body.
  • one or more wire bonds or ribbon bonds are electrically connected to a structure being electrically insulated from the top layer of the substrate.
  • the wire bonds or ribbon bonds are used as connectors providing electrical connection.
  • the use of wire bonds or ribbon bonds having a large cross-sectional area makes it possible to reduce the electrical re sistance and hereby the heat generation.
  • the surface structuring comprises wires or ribbons at tached to the top surface of the shaped metal body.
  • This type of surface struc turing can be provided using the same bonding machine utilised for other bonds in the module, and thus no additional steps or tools are required in the production process, leading to an efficient and cost-effective means of provid ing efficient cooling. Furthermore, it is possible to provide a very large surface area of the surface structuring.
  • the surface structuring comprises a plurality of structures made by a laser structuring process applied to the top surface of the shaped metal body.
  • a laser structuring process applied to the top surface of the shaped metal body.
  • the structures made by the laser structuring process are protruding structures and/or groove-shaped structures.
  • the ratio between height and distance of the struc tures is in the range from 1 : 2 up to 30 : 1.
  • the height of the structures is below 3 mm, preferably below 2 mm, more preferably below 1,5 mm, and in a small-scale pattern in the range of 0.5 to 1,0 mm, wherein the distance between the individual structures is below 6 mm, pref erably below 4 mm, more preferably below 3 mm, and in a small-scale pattern in the range of 1.5 to 2.0 mm.
  • the smallest size is achieved using laser struc turing and may be down to 20nm in form of pores or protrusions.
  • the laser structuring process is combined with another surface structuring process.
  • another surface structuring process it is possible to increase the surface area of the top surface of the shaped metal body even further.
  • the surface structuring comprises structures made by a stamping process applied to the top surface of the shaped metal body.
  • a stamping process applied to the top surface of the shaped metal body.
  • the surface structuring comprises protruding pins attached to the top surface of the shaped metal body.
  • the protruding pins may comprise a cylindrical portion.
  • the protruding pins may comprise a con ical portion, e.g. a pointed distal portion.
  • the surface structuring comprises protruding pins at tached to the top surface of the shaped metal body, wherein the protruding pins extend basically perpendicular to the top surface of the shaped metal body.
  • the shaped metal body comprises a lateral por tion without surface structuring.
  • a connector e.g. a wire bond
  • the shaped metal body comprises a central portion with out surface structuring.
  • a connector such as a wire bond
  • the shaped metal body in the central portion.
  • the substrate is attached to a base plate, pref erably by means of a sintering process.
  • a firm attachment between the substrate and the base plate can be provided.
  • the shaped metal body is sintered to the upper surface of the semiconductor. Accordingly, it is possible to provide a strong and reli able attachment between the shaped metal body and the semiconductor.
  • the substrate is a direct bonded copper (DBC) substrate.
  • DBC direct bonded copper
  • AMB active metal brazed
  • the method according to the invention is a method for manufacturing a sem iconductor module, wherein the method comprises the step of:
  • the method comprises the step of providing to the top surface of the shaped metal body a surface structuring that increases the surface area of the top surface.
  • the method comprises the step of connecting the shaped metal body and one additional component using wire bonds or ribbon bonds.
  • the stamped structures are provided to the shaped metal body prior to attaching the shaped metal body to the upper surface of the semiconductor.
  • lasered structures are provided to the shaped metal body prior to or after attaching the shaped metal body to the upper surface of the semiconductor.
  • the shaped metal body is fixed onto the upper surface of the semiconductor by using a sintering process.
  • the semiconductor is fixed onto the top layer of the sub strate by using a sintering process.
  • the substrate is a DBC substrate.
  • Fig. 1A shows a cross-sectional view of a prior art semiconductor mod ule
  • Fig. IB shows a close-up view of the prior art semiconductor module shown in Fig. 1A;
  • Fig. 2A shows a cross-sectional view of a semiconductor module accord ing to the invention
  • Fig. 2B shows a cross-sectional view of a portion of a semiconductor module according to the invention
  • Fig. 2C shows a cross-sectional view of a portion of another semiconduc tor module according to the invention
  • Fig. 2D shows a cross-sectional view of a portion of a further semicon ductor module according to the invention
  • Fig. 2E shows a top view of the semiconductor module shown in Fig. 2C;
  • Fig. 2F shows a top view of the semiconductor module shown in Fig. 2D;
  • Fig. 3A shows a top view of a shaped metal body comprising a top surface provided with surface structuring
  • Fig. 3B shows a top view of another shaped metal body comprising a top surface provided with surface structuring
  • Fig. 3C shows a close-up view of the surface structuring shown in Fig.
  • Fig. 3D shows a cross-sectional view of a shaped metal body comprising a top surface provided with surface structuring according to the invention
  • Fig. 3E shows a cross-sectional view of another shaped metal body com prising a top surface provided with surface structuring according to the invention
  • Fig. 4A shows a cross-sectional view of a shaped metal body comprising a top surface provided with surface structuring according to the invention
  • Fig. 4B shows a close-up cross-sectional view of a shaped metal body comprising a top surface provided with surface structuring ac cording to the invention
  • Fig. 4C shows the shaped metal body shown in Fig. 4B in a configuration, in which an encapsulation is covering the surface structuring.
  • a semiconductor module 2 of the pre sent invention is illustrated in Fig. 2A.
  • Fig. 2A is a schematic side view of a semiconductor module 2 according to the invention.
  • the semiconductor module 2 comprises a shaped metal body 20 fixed to an upper surface of a semiconductor 26 having a lower surface that is sintered onto a top layer 8' of a substrate 4.
  • the shaped metal body 20 comprises a top surface provided with surface structuring 32.
  • the surface structuring 32 increases the surface area of the top surface.
  • the semiconductor module 2 comprises a base plate 6.
  • a sintering layer 12 is provided on the top of the base plate 6 in order to attach (during a sintering process) a copper layer 8 thereto.
  • Other means of attaching the copper layer 8 to the base plate 6 are also possible, such as the use of solder.
  • the copper layer 8 constitutes the bottom part of a direct bonded copper (DBC) substrate 4.
  • the DCB substrate 4 comprises a ceramic substrate 10 sandwiched between the lower copper layer 8 and an upper copper layer 8'.
  • a separate conducting portion 16 of the upper copper layer is also shown here attached to the top portion of the ceramic substrate 10. This may form a separate section of the electrical circuit pattern on the upper surface of the DBC.
  • a shaped metal body 20 is attached to the semiconductor 26 (of silicon or silicon carbide).
  • the semiconductor 26 is attached to the upper copper layer 8' by means of a sintering layer 28.
  • the surface structuring 32 is attached to a shaped metal body 20 that is attached to the semiconductor 26 by means of a sintering layer 22.
  • a wire bond 18 is electrically connected to the shaped metal body 20 and the conducting portion 16.
  • the semiconductor module 2 comprises an encapsula tion 34 that is brought into thermal contact with the surface structuring 32.
  • the encapsulation 34 covers the entire surface structuring 32 and is electri cally insulating and thermally conductive. It can be seen that the height H2 of the encapsulation 34 is larger than the height Hi of the surface structuring 32.
  • the shaped metal body 20 is a copper foil.
  • the wire bond may be replaced by ribbon bond (e.g. made of cop per).
  • Fig. 2B illustrates a cross-sectional view of a portion of a semiconductor mod ule according to the invention comprising a shaped metal body 20 provided with surface structuring 32'.
  • the surface structuring 32' is attached to a shaped metal body 20 a chip 30.
  • the surface structuring 32' is made from wire bonds.
  • the surface structuring 32 comprises a central portion attached to the shaped metal body 20 and lateral portions that protrude therefrom. Accordingly, the surface area and thus the cooling capacity of the shaped metal body 20 is increased.
  • the surface structuring 32' may be attached to the shaped metal body 20 by using the same technique as when attaching a wire bond 18. It can be seen that the surface structuring 32' comprises a plurality of members made from wire bonds. These members are spaced from each other.
  • Fig. 2C illustrates a cross-sectional view of a portion of another semiconductor module according to the invention
  • Fig. 2E illustrates a top view of the semiconductor module shown in Fig. 2C in a configuration, in which no wire bond 18 is attached to the shaped metal body 20.
  • the shaped metal body 20 is provided with a surface structuring 32" formed by a plurality of pins protruding from the lower portion of the shaped metal body 20.
  • the shaped metal body 20 comprises a central portion 36 without surface structuring.
  • the central portion 36 is rectangular, however, it could be shaped differently.
  • a wire bond 18 is attached to the central portion 36.
  • Fig. 2D illustrates a cross-sectional view of a portion of a semiconductor mod ule according to the invention
  • Fig. 2F illustrates a top view of the semiconductor module shown in Fig. 2D in a configuration, in which no wire bond 18 is attached to the shaped metal body 20.
  • the shaped metal body 20 is provided with a surface structuring 32" comprising a plurality of pins protruding from the lower portion of the shaped metal body 20.
  • the shaped metal body 20 comprises a lateral portion 38 having no surface structuring.
  • the lateral portion 38 extends along the periphery of the shaped metal body 20.
  • a wire bond 18 is attached to the lateral portion 38.
  • Fig. 1A illustrates a cross-sectional view of a prior art semiconductor module 102.
  • the semiconductor module 102 comprises a heatsink 14 attached to the bottom surface of a base plate 6.
  • the prior art semiconductor module 102 comprises a metal body 20 fixed to an upper surface of a semiconductor 26 having a lower surface that is sintered onto a top layer 8' of a substrate 4.
  • the top surface of the metal body 20 is not provided with any surface struc turing.
  • a sintering layer 12 is provided on the top of the base plate 6 in order to attach a copper layer 8 thereto.
  • Other means of attaching the copper layer 8 to the base plate 6 are also known, such as the use of solder.
  • the copper layer 8 constitutes the bottom part of a DBC substrate 4 comprising a ceramic substrate 10 sandwiched between the lower copper layer 8 and an upper cop per layer 8'.
  • a conducting portion 16 is attached to the top portion of the ceramic substrate 10 in a distance from the upper copper layer 8'.
  • the semiconductor 26 is attached to the upper copper layer 8' by means of a sintering layer 28.
  • the surface structuring 32 is attached to a shaped metal body 20 that is attached to the semiconductor 26 by means of a sintering layer 22.
  • Fig. IB illustrates a close-up view of the prior art semiconductor module shown in Fig. 1A.
  • Fig. 3A illustrates a top view of a shaped metal body 20 comprising a top surface provided with surface structuring 32"'.
  • the surface structuring 32"' is made by a stamping process applied to the top surface of the shaped metal body 20.
  • protruding members and groove members it is possible to provide both protruding members and groove members.
  • protruding struc tures and groove structures are arranged in the top surface of the shaped metal body 20 in an alternating manner.
  • the shaped metal body 20 comprises a lateral portion 38 without surface structuring.
  • a connector e.g. a wire bond
  • the lateral portion 38 is pro vided in the right side of the shaped metal body 20.
  • Fig. 3B illustrates a top view of a shaped metal body 20 having a top surface provided with surface structuring 32"".
  • the surface structuring comprises pro truding pins attached to the top surface of the shaped metal body 20.
  • the protruding pins have a basically a cylindrical body portion and a conical distal portion.
  • the shaped metal body 20 comprises a lateral portion 38 without surface structuring.
  • the lateral portion 38 extends along the periphery of the shaped metal body 20.
  • Fig. 3C illustrates a close-up view of the surface structuring 32"" shown in Fig. 3B. It can be seen that the pins are evenly distributed and formed as convex bodies protruding from the shaped metal body.
  • Fig. 3D illustrates a cross-sectional view of a shaped metal body 20 comprises a top surface provided with surface structuring 32"" according to the inven tion.
  • the shaped metal body 20 is provided with a surface structuring 32"" formed by a plurality of pins protruding from the lower portion of the shaped metal body 20.
  • the shaped metal body 20 comprises a central portion, in which no surface structuring is provided.
  • a wire bond 18 is attached to the central portion.
  • it is achieved that a large contact area is provided between the wire bond 18 and the central portion of the shaped metal body 20.
  • Fig. 3E illustrates a cross-sectional view of a shaped metal body 20 comprising a top surface provided with surface structuring 32""' according to the inven tion.
  • the shaped metal body 20 is provided with a surface structuring 32"" formed by a plurality of pins protruding from the lower portion of the shaped metal body 20.
  • the shaped metal body 20 comprises a lateral portion, in which no surface structuring is provided.
  • a wire bond 18 is attached to the lateral portion.
  • a large contact area is provided between the wire bond 18 and the lateral portion of the shaped metal body 20.
  • Fig. 4A illustrates a cross-sectional view of a shaped metal body 20 comprising a top surface provided with surface structuring 32""' according to the inven tion.
  • the shaped metal body 20 is provided with a surface structuring 32'"" formed by a plurality of pins protruding from the lower portion of the shaped metal body 20.
  • the surface structuring 32'"" is provided at the entire top surface of the shaped metal body 20. Accordingly, a wire bond 18 attached to a portion of the shaped metal body 20 is attached to the surface structuring 32""'.
  • Fig. 4B illustrates a close-up cross-sectional view of a shaped metal body 20 which is provided with surface structuring 32' according to the invention.
  • the surface structuring 32' is made by a plurality of the wire bonds each being fixed in both ends to the top surface of the shaped metal body 20.
  • Each wire bond is basically U-shaped and protrudes from the top surface of the shaped metal body 20.
  • the wire bonds basically extend perpendicular to the top sur face of the shaped metal body 20.
  • Fig. 4C illustrates the shaped metal body 20 shown in Fig. 4B in a configura tion, in which an encapsulation 34 is covering the surface structuring 32'.
  • the thermal flow 42 is indicated with undulating arrows. It can be seen that the thermal flow 42 occurs from the entire outer surface of the encapsulation 34.
  • the encapsulation 34 entirely encloses the surface structuring 32' and the portion of the top surface of the shaped metal body 20, onto which the wire bonds are fixed.

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un module semi-conducteur (2). Le module semi-conducteur (2) comprend un corps de métal formé (20) fixé à une surface supérieure d'un semi-conducteur (26) dont une surface inférieure est connectée par frittage à une couche supérieure (S') d'un substrat (4). Le corps de métal formé (20) comprend une surface supérieure (30) comportant des structures de surface (32) qui accroissent l'aire de surface de la surface supérieure (30). Le module semi-conducteur (2) permet une solution de refroidissement améliorée et rend ainsi possible d'améliorer la densité de puissance volumétrique.
PCT/EP2020/058532 2019-04-05 2020-03-26 Module semi-conducteur et procédé destiné à le fabriquer Ceased WO2020201005A1 (fr)

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DE102019108932.8A DE102019108932B4 (de) 2019-04-05 2019-04-05 Halbleitermodul und Verfahren zu seiner Herstellung
DE102019108932.8 2019-04-05

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WO2006012847A1 (fr) * 2004-07-29 2006-02-09 Infineon Technologies Ag Composant a semi-conducteur de puissance vertical comprenant une puce a semi-conducteur, et procede pour le realiser
US20160260648A1 (en) * 2013-11-07 2016-09-08 Heraeus Deutschland GmbH & Co. KG Semi-conductor module with an encapsulating cement mass that covers a semi-conductor component
WO2019197304A1 (fr) * 2018-04-11 2019-10-17 Abb Schweiz Ag Plaque métallique à matériau réduit sur puce semi-conductrice de puissance

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US5514906A (en) 1993-11-10 1996-05-07 Fujitsu Limited Apparatus for cooling semiconductor chips in multichip modules
JP3602453B2 (ja) 2000-08-31 2004-12-15 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP4112816B2 (ja) 2001-04-18 2008-07-02 株式会社東芝 半導体装置および半導体装置の製造方法
CN100435324C (zh) 2004-12-20 2008-11-19 半导体元件工业有限责任公司 具有增强散热性的半导体封装结构
JP5857468B2 (ja) 2011-06-22 2016-02-10 株式会社デンソー 半導体装置
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WO2006012847A1 (fr) * 2004-07-29 2006-02-09 Infineon Technologies Ag Composant a semi-conducteur de puissance vertical comprenant une puce a semi-conducteur, et procede pour le realiser
US20160260648A1 (en) * 2013-11-07 2016-09-08 Heraeus Deutschland GmbH & Co. KG Semi-conductor module with an encapsulating cement mass that covers a semi-conductor component
WO2019197304A1 (fr) * 2018-04-11 2019-10-17 Abb Schweiz Ag Plaque métallique à matériau réduit sur puce semi-conductrice de puissance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023061539A (ja) * 2021-10-20 2023-05-02 株式会社日立製作所 冷却装置及び冷却装置の製造方法
JP7672946B2 (ja) 2021-10-20 2025-05-08 株式会社日立製作所 冷却装置及び冷却装置の製造方法

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DE102019108932B4 (de) 2022-04-21

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