WO2020258723A1 - Nouvelle structure d'encapsulation interne d'igbt de type à sertissage - Google Patents

Nouvelle structure d'encapsulation interne d'igbt de type à sertissage Download PDF

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Publication number
WO2020258723A1
WO2020258723A1 PCT/CN2019/122276 CN2019122276W WO2020258723A1 WO 2020258723 A1 WO2020258723 A1 WO 2020258723A1 CN 2019122276 W CN2019122276 W CN 2019122276W WO 2020258723 A1 WO2020258723 A1 WO 2020258723A1
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Prior art keywords
chip
igbt
crimping
layer
material layer
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Ceased
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PCT/CN2019/122276
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English (en)
Chinese (zh)
Inventor
于凯
黄小娟
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CRRC Xian Yongdian Electric Co Ltd
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CRRC Xian Yongdian Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials

Definitions

  • the invention belongs to the technical field of IGBTs, relates to an IGBT packaging structure, and specifically relates to a novel crimping type IGBT internal packaging structure.
  • IGBT is a composite device, which not only has the characteristics of easy drive of MOSFET, but also has the characteristics of high voltage and high current of power transistor. It is recognized worldwide as a representative product of the third technological revolution of power electronics.
  • crimping type IGBT Compared with welded IGBT, crimping type IGBT has the advantages of double-sided heat dissipation, wider safe operating area (SOA), higher operating junction temperature, high reliability, etc., and is used in fields that require high device reliability and series use. Has a very broad market prospects.
  • Common crimp IGBTs on the market now mainly have two packaging forms. One is similar in appearance to conventional power devices such as thyristors, GTOs, and IGCTs, represented by products such as IXYS and Toshiba; the other is a flat plate with a spring structure inside. Type IGBT, represented by ABB products.
  • the crimping type IGBT modules that are publicly sold on the market have two structures: a flat plate type and a round cake type.
  • the plate type IGBT module adopts an internal spring crimping package, and the internal structure of the round cake type IGBT module package is grid-like distribution.
  • the internal structure of the flat IGBT module is shown in Figure 1.
  • the package adopts the internal structure of spring 5-molybdenum layer 3-silver-aluminum metal layer 6-silicon chip 7-solder 8-molybdenum plate 13.
  • the chip is integrated by molybdenum plate 13 and spring structure
  • the internal structure of the pie-shaped IGBT module is shown in Figure 2.
  • the package adopts the internal structure of molybdenum layer 3-IGBT chip/FRD chip 1-molybdenum layer 3-silver layer 4, and the electrodes of the chip are led out through hard contacts.
  • the structure and processing technology still have many shortcomings, including: 1
  • the spring 5 is required to transmit the contact pressure to the chip, and the pressure must be balanced; at the same time, it has a spring damping effect, which can alleviate the impact of external forces on the chip and play a good protective effect on the chip; , Need to potting silicone gel 9, the process is complicated, and the stability of the process is difficult to guarantee.
  • the tube shell 12 of the pie-shaped IGBT module contains a boss, the circuit board 11 is arranged above the tube shell 12, the molybdenum layer 3-IGBT chip/FRD chip 1-molybdenum layer 3-silver layer 4 is crimped and fixed in position On the frame 10; the tube shell 12 is inevitably deformed during the processing, which causes the pressure of the internal structure of the crimped IGBT module to be unbalanced, and the chip current flow capacity is unbalanced, which cannot guarantee the high reliability of the crimped IGBT module ; And because the shape of the tube shell 12 increases with the size of the tube shell 12, it is difficult to ensure pressure balance and current balance when multiple chips are connected in parallel.
  • the existing IGBT module structure does not support the application of soldered chips in the crimping structure.
  • the core technology of crimping devices is only in the hands of a few companies with the ability to develop crimping chips, which is not conducive to crimping devices.
  • the purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art and provide a new type of crimping type IGBT internal packaging structure.
  • a new type of material with excellent compressibility, electrical conductivity and thermal conductivity, due to its thermal, electrical and mechanical properties With stable characteristics and long life, it can further improve the application reliability of crimping IGBT modules.
  • the present invention provides the following technical solutions:
  • the present invention provides a novel crimping type IGBT internal packaging structure, including an IGBT chip/FRD chip, the upper layer of the IGBT chip/FRD chip is an elastic material layer with high electrical conductivity and high thermal conductivity, and the IGBT chip/FRD The lower layer of the chip is sequentially a molybdenum layer, a silver layer or a layer of elastic material with high electrical conductivity and high thermal conductivity.
  • the present invention also provides a novel crimping type IGBT internal packaging structure, including an IGBT chip/FRD chip, the upper and lower layers of the IGBT chip/FRD chip are both highly conductive and highly thermally conductive elastic material layers.
  • the lower layer of the elastic material layer with high electrical conductivity and high thermal conductivity located at the lower layer of the IGBT chip/FRD chip is also provided with a silver layer.
  • the present invention also provides a novel crimping type IGBT internal packaging structure, including an IGBT chip/FRD chip, the upper layer of the IGBT chip/FRD chip is a molybdenum layer, and the lower layer of the IGBT chip/FRD chip is A layer of elastic material with high electrical conductivity and high thermal conductivity.
  • a silver layer is provided under the elastic material layer with high electrical conductivity and high thermal conductivity.
  • a molybdenum layer is arranged between the high electrical conductivity and high thermal conductivity elastic material layer and the IGBT chip/FRD chip.
  • the thermal conductivity of the highly conductive and highly thermally conductive elastic material layer is not less than 100W/(m ⁇ k), and the conductivity of the highly conductive and highly thermally conductive elastic material layer is not less than If the thickness is less than 1 ⁇ 10 4 S/cm, the compressible thickness of the elastic material layer with high electrical conductivity and high thermal conductivity is not less than 0.1 mm.
  • the technical solution provided by the present invention includes the following beneficial effects: by adding a design of a highly conductive and highly thermally conductive elastic material layer, the surface of the crimping type IGBT package structure is improved due to the compressibility of the highly conductive material layer Contact, which converts the hard contact of each layer in the existing crimping type internal structure into soft contact, reduces the contact thermal resistance, and can effectively compensate for the flatness change of the contact surface; in addition, the high electrical conductivity and thermal conductivity of the material, It can ensure that the chip has a balanced flow capacity, while effectively reducing the distribution of hot spots in the plane and improving the thermal conductivity of the IGBT module, improving the reliability of the IGBT module and extending the service life.
  • Figure 1 is a diagram of the internal structure of a traditional flat IGBT module
  • Figure 2 is the internal structure diagram of the traditional pie-shaped IGBT module
  • FIG. 3 is a diagram of the internal packaging structure of the first new type of crimping type IGBT provided by the present invention.
  • FIG. 4 is a diagram of the internal packaging structure of the second new type of crimping type IGBT provided by the present invention.
  • FIG. 5 is a diagram of the internal packaging structure of the third new type of crimping type IGBT provided by the present invention.
  • FIG. 6 is a diagram of the internal packaging structure of the fourth new type of crimping type IGBT provided by the present invention.
  • FIG. 7 is a view of the internal packaging structure of the fifth new type crimping type IGBT provided by the present invention.
  • FIG. 8 is a diagram of the internal packaging structure of the sixth new type of crimping type IGBT provided by the present invention.
  • FIG. 9 is a diagram of the internal packaging structure of the seventh new type crimping type IGBT provided by the present invention.
  • IGBT chip/FRD chip 1. High conductivity and high thermal conductivity elastic material layer; 3. Molybdenum layer; 4. Silver layer; 5. Spring; 6. Silver and aluminum metal layer; 7. Silicon chip; 8. Solder; 9. Silica gel; 10. Positioning frame; 11. Circuit board; 12. Tube shell; 13. Molybdenum plate.
  • the present invention provides a new type of crimping type IGBT internal packaging structure, including a highly conductive and highly thermally conductive elastic material layer 2-IGBT chip/FRD chip 1-molybdenum layer 3-silver layer 4 structure, which specifically includes:
  • the upper layer of the IGBT chip/FRD chip 1 is a highly conductive and thermally conductive elastic material layer 2
  • the lower layer of the IGBT chip/FRD chip 1 is a molybdenum layer 3 and a silver layer 4 in sequence.
  • the elastic material layer 2 with high electrical conductivity and high thermal conductivity has a thermal conductivity of not less than 100W/(m ⁇ k), an electrical conductivity of not less than 1 ⁇ 10 4 S/cm, and a compressible thickness of not less than 0.1mm;
  • the compressibility of the elastic material improves the surface contact of the crimp type IGBT package structure, converts the hard contact of each layer in the existing crimp type internal structure into soft contact, reduces the contact thermal resistance, and can effectively compensate for the contact surface Flatness changes, easy to replace;
  • the high conductivity and thermal conductivity of the material can ensure that the chip has a balanced flow capacity, while effectively reducing the distribution of hot spots in the plane and improving the thermal conductivity of the module, improving the reliability of the module, and extending its service life .
  • this new type of crimping type IGBT internal packaging structure while ensuring the excellent performance of the crimping module, greatly simplifies the crimping IGBT packaging process, improving the application reliability and life of the crimping IGBT module, and reducing the crimping
  • the IGBT module has strict requirements for the chip, the shell 12, etc.
  • the packaging structure is no longer limited to the crimping type IGBT chip/FRD chip 1 for the chip, and the ordinary IGBT chip/FRD chip 1 can also be designed to package the IGBT module through this structure design.
  • the present invention provides a new type of crimping type IGBT internal packaging structure, including a highly conductive and highly thermally conductive elastic material layer 2-IGBT chip/FRD chip 1-highly conductive and highly thermally conductive elastic material layer 2 structure, which specifically includes : IGBT chip/FRD chip 1, the upper and lower layers of IGBT chip/FRD chip 1 are all elastic material layer 2 with high electrical conductivity and high thermal conductivity.
  • a silver layer 4 is further provided on the lower layer of the highly conductive and highly thermally conductive elastic material layer 2 located at the lower layer of the IGBT chip/FRD chip 1, as shown in FIG.
  • the present invention provides a new type of crimping type IGBT internal packaging structure, including molybdenum layer 3-IGBT chip / FRD chip 1-high electrical conductivity and high thermal conductivity elastic material layer 2 structure, specifically including: IGBT chip / FRD Chip 1, the upper layer of the IGBT chip/FRD chip 1 is a molybdenum layer 3, and the lower layer of the IGBT chip/FRD chip 1 is a layer 2 of an elastic material with high electrical conductivity and high thermal conductivity.
  • a silver layer 4 is provided under the elastic material layer 2 with high electrical conductivity and high thermal conductivity, see FIG. 7.
  • a molybdenum layer 3 is provided between the highly conductive and highly thermally conductive elastic material layer 2 and the IGBT chip/FRD chip 1, see FIG. 8.
  • the present invention provides a new type of crimping type IGBT internal packaging structure, including a highly conductive and highly thermally conductive elastic material layer 2-IGBT chip/FRD chip 1-molybdenum layer 3-highly conductive and highly conductive elastic material layer 2
  • the structure specifically includes: IGBT chip/FRD chip 1, the upper layer of IGBT chip/FRD chip 1 is a highly conductive and highly thermally conductive elastic material layer 2, and the lower layer of IGBT chip/FRD chip 1 is successively a molybdenum layer 3, a highly conductive and highly conductive elastic material Layer 2.
  • the thermal conductivity of the highly conductive and thermally conductive elastic material layer 2 is not less than 100W/(m ⁇ k), the conductivity is not less than 1 ⁇ 10 4 S/cm, and it is compressible
  • the thickness is not less than 0.1mm; the compressibility of the highly conductive and thermally conductive elastic material improves the surface contact of the crimping type IGBT package structure, and transforms the hard contact of each layer in the existing crimping type internal structure into soft contact, reducing Contact thermal resistance, and can effectively compensate for changes in the flatness of the contact surface; the high electrical conductivity and thermal conductivity of the material can ensure that the chip has a balanced flow capacity, while effectively reducing the distribution of in-plane hot spots and improving the thermal conductivity of the module to improve the module Reliability, extend its service life.
  • the novel crimping type IGBT module structure adopts an elastic material layer 2 with high electrical conductivity and high thermal conductivity with excellent compressibility, electrical conductivity and thermal conductivity.
  • the high electrical and thermal conductivity of this material layer can replace the functions of the molybdenum and silver sheets inside the existing crimping IGBT module, even when the processing technology of this high electrical and thermal conductivity material is improved, the working characteristics can be satisfied.
  • it replaces molybdenum sheet + silver sheet; on the other hand, the introduction of this material layer can convert the hard contact of each layer in the existing crimping type internal structure into soft contact, which can ensure the pressure balance of the module while ensuring Thermal conductivity and electrical conductivity inside the module.
  • This new type of crimping type IGBT internal packaging structure while ensuring the excellent performance of the crimping module, simplifies the packaging process of the ceramic shell 12 package crimping type IGBT, solving the pressure balance problem of the crimping type IGBT module, and ensuring Current flow capacity and high reliability requirements.
  • the packaging structure is no longer limited to the crimping type IGBT chip/FRD chip for the chip, and the ordinary IGBT chip/FRD chip can also be designed to package the IGBT module through this structure design.

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Abstract

La présente invention appartient au domaine technique des IGBT, concerne une nouvelle structure d'encapsulation interne d'IGBT de type à sertissage, et fait intervenir une couche de matériau élastique à haute conductivité électrique et à haute conductivité thermique qui présente une compressibilité et une excellente performance en termes de conductivité électrique et de conductivité thermique. Au moyen des caractéristiques de haute conductivité électrique et de haute conductivité thermique, la couche de matériau peut respectivement remplacer les fonctions d'une pièce de molybdène et d'une pièce d'argent dans un module IGBT de type à sertissage existant, et peut même remplacer la pièce de molybdène et la pièce d'argent simultanément si une caractéristique de travail est satisfaite après que le processus de traitement pour ce matériau à haute conductivité électrique et à haute conductivité thermique est amélioré ; de plus, un contact dur entre des couches dans une structure interne de type à sertissage existante peut être transformé en contact souple au moyen de l'introduction de cette couche de matériau, de telle sorte que la conductivité thermique et la conductivité électrique de l'intérieur d'un module peuvent être garanties tandis que l'équilibre de pression du module est assuré. La nouvelle structure d'encapsulation interne d'IGBT de type à sertissage permet de simplifier le processus d'encapsulation d'un boîtier en céramique contenant un IGBT de type à sertissage et de résoudre le problème de l'équilibre de pression du module IGBT de type à sertissage tout en assurant les excellentes performances du module à sertissage.
PCT/CN2019/122276 2019-06-28 2019-11-30 Nouvelle structure d'encapsulation interne d'igbt de type à sertissage Ceased WO2020258723A1 (fr)

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CN201910575150.8 2019-06-28
CN201910575150.8A CN110416187B (zh) 2019-06-28 2019-06-28 一种新型压接式igbt内部封装结构

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Publication number Priority date Publication date Assignee Title
CN110416187B (zh) * 2019-06-28 2021-07-09 西安中车永电电气有限公司 一种新型压接式igbt内部封装结构
CN111463184B (zh) * 2020-04-27 2025-10-03 上海共晶电子科技有限公司 一种功率半导体器件低热阻封装结构及其制作方法
CN112687676B (zh) * 2020-12-14 2023-06-27 株洲中车时代半导体有限公司 压接式igbt子模组及压接式igbt模块
CN112885797A (zh) * 2021-01-18 2021-06-01 重庆大学 一种低接触热阻压接型半导体器件结构、制造方法

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CN1236982A (zh) * 1998-01-22 1999-12-01 株式会社日立制作所 压力接触型半导体器件及其转换器
JP2005209784A (ja) * 2004-01-21 2005-08-04 Hitachi Ltd 圧接型半導体装置、及びこれを用いた変換器
CN107393884A (zh) * 2017-06-30 2017-11-24 西安中车永电电气有限公司 一种压接式igbt模块叠层组件及压接式igbt模块内部封装结构
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CN110416187A (zh) * 2019-06-28 2019-11-05 西安中车永电电气有限公司 一种新型压接式igbt内部封装结构

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