WO2021084188A1 - Procédé de collage de deux surfaces hydrophiles - Google Patents
Procédé de collage de deux surfaces hydrophiles Download PDFInfo
- Publication number
- WO2021084188A1 WO2021084188A1 PCT/FR2020/051888 FR2020051888W WO2021084188A1 WO 2021084188 A1 WO2021084188 A1 WO 2021084188A1 FR 2020051888 W FR2020051888 W FR 2020051888W WO 2021084188 A1 WO2021084188 A1 WO 2021084188A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- hydrophilic surface
- specific molecule
- hydrophilic
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
- H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/31—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive effect being based on a Gecko structure
Definitions
- the invention relates to a method of direct bonding of two hydrophilic surfaces as well as to an assembly obtained with such a method.
- the invention finds applications in many industrial fields, and in particular for the manufacture of silicon on insulator (SOI) or for the production of imagers, for example.
- SOI silicon on insulator
- the invention is particularly advantageous since it makes it possible to obtain an assembly having good mechanical strength, for low thermal budgets for annealing after bonding.
- Direct bonding is a spontaneous bonding between two surfaces without adding material, and in particular without adding a thick layer of liquid material or polymer. It is nevertheless possible to have a few monolayers of water adsorbed on the surfaces to be bonded, in particular if they are hydrophilic, but the latter are macroscopically dry. Direct bonding is conventionally carried out at ambient temperature and ambient pressure, but this is not an obligation.
- the surfaces to be bonded are generally cleaned beforehand with a solution based on Caro acid obtained with a mixture of 96% sulfuric acid and 30% hydrogen peroxide (3: 1) at 180 ° C and SCI (mixture of 30% ammonia, 30% hydrogen peroxide and deionized water (1: 1: 5)) at 70 ° C.
- cleanings make it possible to remove organic and particulate contaminations which are very prejudicial to direct bonding.
- other highly oxidizing cleaning solutions such as, for example, aqueous solutions containing ozone or else with a treatment using exposure to UV light in the presence of gaseous ozone.
- Direct bonding can be characterized by: - bonding energy (otherwise called bonding energy): this is the energy necessary to separate the two bonded surfaces; the bonding energy changes as a function of the thermal annealing that is applied after bonding,
- the adhesion energy typically ranges from 30 to 100 mJ / m 2 .
- the bonding energy of a SÎ02-SÎ02 bonding in a clean room environment, with a chemical cleaning based on Caro and SCI at 70 ° C, is approximately 140mJ / m 2 just after bonding, without annealing .
- the adhesion energy increases as a function of the temperature of the thermal anneals. For example, the bonding energy rises slowly to reach 3J / m 2 at 500 ° C and then stagnates up to 800 ° C (figure 1).
- one solution consists in carrying out a plasma treatment. As shown in FIG. 1, with a nitrogen plasma (N2), for an oxide-oxide bonding, the bonding energy rapidly rises to 5 J / m 2 for an annealing temperature of 300 ° C.
- N2 nitrogen plasma
- the use of a plasma may be incompatible with certain substrates and / or its use lengthens the times and / or costs of the processes, which makes them more difficult to industrialize.
- the plasma treatment also modifies the surface to a thickness of a few nanometers (between 1 and 10nm). This modification may disrupt future devices.
- the plasma creates an oxide layer which is difficult to control in terms of thickness and quality.
- some plasmas such as N2 plasma create interfacial charge problems that can disrupt the electrical operation of future devices.
- An object of the present invention is to remedy the drawbacks of the prior art and to provide a bonding process making it possible to obtain a strong bonding energy at low temperature (typically less than or equal to 500 ° C. and preferably less than or equal to 300 ° C.) without using plasma treatment.
- the present invention provides a method of direct bonding of two substrates comprising the following steps: providing a first substrate and a second substrate, the first substrate being covered by a first hydrophilic surface and the second substrate being covered by a second hydrophilic surface,
- thermal bonding annealing treatment preferably at a temperature less than or equal to 500 ° C, and even more preferably less than or equal to 300 ° C.
- the invention differs fundamentally from the prior art by the use of a specific molecule comprising a hydrophilic functional group and a basic functional group.
- the hydrophilic functional group allows the specific molecule to readily chemisorb onto the hydrophilic surface to be bonded.
- the basic functional group makes it possible to increase the pH of the adsorbed water monolayers. The presence of this molecule considerably increases the bonding energy obtained.
- hydrophilic surface is meant that at least one monolayer of water is adsorbed on its surface at ambient pressure (ie of the order of 1 bar) in air having at least 1% relative humidity.
- a surface is said to be hydrophilic if the angle of a drop of water is less than 90 ° and preferably less than 50 ° C, and even more preferably less than 5 °.
- the first hydrophilic surface and the second hydrophilic surface are made of oxide. It can be a thin oxide layer deposited, a thin oxide layer obtained by a thermal treatment (otherwise called thermal oxide) and / or a thin oxide layer obtained by a chemical treatment. (otherwise called native oxide or chemical oxide).
- the specific molecule completely covers the first hydrophilic surface of the first substrate and / or the second hydrophilic surface of the second substrate.
- the specific molecule covers from 0.05% to 10%, and preferably from 0.05% to 1%, of the first hydrophilic surface of the first substrate and / or of the second hydrophilic surface of the second substrate.
- the specific molecule is deposited in liquid form.
- the specific molecule is deposited in gaseous form.
- the hydrophilic functional group of the specific molecule is an alcohol function and / or the basic functional group is a primary, secondary or tertiary amine.
- the molar mass of the specific molecule is less than or equal to 500 g / mol and preferably less than or equal to 200 g / mol.
- the first substrate and / or the second substrate are silicon substrates.
- the substrate (s) are covered with a thin layer of silicon oxide.
- the oxide layer can be a deposited layer, a thermal oxide layer or a native oxide layer.
- the bonding process has many advantages: - the surface preparation is made with the specific molecule in liquid or gaseous form: the process is simple to implement and therefore easily industrializable,
- the bonding temperatures are compatible with many applications and / or with many substrates (the nature and / or the presence of electronic and / or opto-electronic components of which require low thermal budgets),
- the invention also relates to an assembly comprising a first substrate and a second substrate, the first substrate being covered by a first hydrophilic surface and the second substrate being covered by a second hydrophilic surface, a specific molecule being arranged between the first hydrophilic surface of the first. substrate and the second hydrophilic surface of the second substrate, the specific molecule comprising a hydrophilic functional group and a basic functional group, the two functional groups of the specific molecule being separated by at least one atom.
- the hydrophilic functional group of the specific molecule is an alcohol function and / or the basic functional group is a primary, secondary or tertiary amine.
- FIG. 1 previously described is a graph representing the bonding energy as a function of the thermal annealing temperature carried out after direct bonding with or without plasma activation, each thermal annealing lasts approximately 2 hours, according to the prior art.
- FIG. 2 schematically shows, in section, two substrates to be assembled by direct bonding, one of the substrates being covered with a specific molecule, according to a particular embodiment of the invention.
- FIG. 3 is a graph showing the bonding energy as a function of the thermal annealing carried out after bonding, when the surface of the oxide layer of one of the substrates is saturated with a specific molecule, according to a particular embodiment of the 'invention.
- FIG. 4 is a graph showing the bonding energy as a function of the thermal annealing carried out after bonding, when the surface of the oxide layer of one of the substrates is partially covered by a specific molecule, according to a particular embodiment of invention.
- FIG. 5 is a graph showing the bonding energy as a function of the thermal annealing carried out after bonding, for different volume dilutions of a specific molecule solution, according to a particular embodiment of the invention.
- FIG. 6 represents an image, obtained by scanning acoustic microscopy (SAM), of a bonding implementing a specific molecule, after thermal annealing at 800 ° C., according to a particular embodiment of the invention.
- SAM scanning acoustic microscopy
- the process is a process for direct bonding of two substrates 10, 20, and more particularly it is a process for direct bonding of two hydrophilic surfaces, for example of oxide.
- the method comprises the following steps: a) providing a first substrate 10 and a second substrate 20, the first substrate 10 being covered by a first hydrophilic surface 11, and the second substrate 20 being covered by a second hydrophilic surface 21 , b) addition of a specific molecule 30 on the first hydrophilic surface of the first substrate and / or on the second hydrophilic surface of the second substrate, the specific molecule 30 comprising a hydrophilic functional group and a basic functional group, the two functional groups of the specific molecule being separated by at least one atom, c) bringing the first hydrophilic surface 11 and the second hydrophilic surface 21 into contact, whereby the two hydrophilic surfaces 11, 21 are glued together, and the first substrate 10 and the second substrate 20 are assembled,
- Each substrate 10, 20 provided in step a) comprises two main faces parallel to one another. At least one of the main faces of each substrate is covered by a hydrophilic surface 11, 21 (FIG. 2).
- the first substrate 10 and / or the second substrate 20 can be made of silica, of metal, of a metal alloy or of a semiconductor material.
- the first substrate 10 and / or the second substrate 20 are made of a material chosen from Si, Ge, InP, AsGa, Al2O3, Si0 2 , S13N4, SiC, GaN, LNO, LTO, Cu, Ti, Ni.
- the first substrate and the second may be of identical nature or of different types.
- the first substrate 10 and the second substrate 20 are covered by a hydrophilic surface 11, 21, that is to say that there is at least one monolayer of water adsorbed on their surface.
- the first substrate 10 is covered with a first thin layer of oxide so as to form a first hydrophilic surface and the second substrate 20 is covered with a second thin layer of oxide so as to form a second hydrophilic surface.
- first substrate 10 and the second substrate 20 are covered by a layer of native oxide or by a layer of thermal oxide.
- one of the substrates may be covered with a layer of native oxide and the other with a layer of thermal oxide.
- the two substrates can be covered with a thermal oxide layer.
- the two substrates can be covered with a layer of native oxide.
- the thermal oxide layer can be replaced by a deposited oxide layer.
- one or more pretreatments for example mechanical and / or chemical
- pretreatments for example mechanical and / or chemical
- SCI mixture of 30% ammonia, 30% hydrogen peroxide and deionized water (1: 1: 5)
- Other cleanings can be considered.
- the substrates 10, 20 are preferably wafers.
- the specific molecule 30 is deposited to improve the bonding.
- the specific molecule 30 is an organic molecule. It has a hydrophilic functional group and a basic functional group, separated by at least one atom. In other words, the two functional groups are not on the same atom, for example, they are not on the same carbon atom.
- basic functional group is understood to mean that the specific molecule comprises a group capable of protonating.
- the basic group is a primary amine, a secondary amine or a tertiary amine. It could also be a group deriving from the ionization of an acidic functional group, for example from the ionization of a functional group, for example from the sulfonic group SO3H, leading to -SO3. It is also possible to have an alcoholate group (R-O) for this basic function.
- the hydrophilic functional group is, for example, a hydroxyl, ether, amide, ester or ketone functional group.
- the hydrophilic functional group is preferably a hydroxyl functional group (also called an alcohol functional group). It can be a primary, secondary or tertiary alcohol.
- the hydrophilic functional group is a hydroxyl functional group and the basic functional group is a primary, secondary or tertiary amine.
- the specific molecule may include more than one acidic functional group and / or more basic functional group.
- the molecule comprises a basic functional group and at least one hydroxyl functional group.
- it comprises a basic functional group and one, two or three hydrophilic functional groups.
- the specific molecule can be cyclic or acyclic. Preferably, it is acyclic. When the molecule has an open carbon chain, it can be linear or branched. It preferably contains from 1 to 10 carbon atoms and even more preferably from 1 to 6 carbon atoms.
- the molecular weight of the specific molecule is less than or equal to 500 g / mol and preferably less than or equal to 200 g / mol. It is advantageously greater than 40 g / mol.
- the specific molecule 30 is chosen from: N, N-Diethyl-2-amino-ethanol (CAS: 100-37-8), dimethylaminoethanol or DMAE (CAS: 108-01-0) , diethylethanolamine or DEAE (CAS 100-37-8), monoethanolamine (CAS: 141-43-5), N-methyldiethanolamine, or MDEA (CAS: 105-59-9), aminomethanol (CAS: 3088 -27-5), N-methylhydroxylamine (CAS: 593-77-l), diethanolamine or DEA (CAS: 111-42-2), dimethanolamine (CAS: 7487-32-3), triethanolamine (CAS : 102-71-6) and trimethanolamine (CAS: 14002-32-5).
- the specific molecule 30 can be deposited:
- the specific molecule can be deposited in liquid form and / or in gaseous form.
- a pure solution of a specific molecule or a dilute solution of a specific molecule can be used.
- a base can advantageously be added to the solution to increase the pH.
- KOH KOH, NaOH, Na2CO3, or NH 4 OH.
- any liquid deposition technique can be used, for example by coating, by spraying, by spin-coating.
- a spin coating is used.
- a substrate is placed in a closed chamber, in which is placed a container containing a solution of the specific molecule (pure or dilute). Then the solution is allowed to evaporate in the closed reactor.
- the specific molecule can completely or partially cover the surface on which is deposited.
- the amount deposited can be such that a continuous monolayer forms on the hydrophilic surface (surface saturation). It is also possible to have several monolayers on the surface, for example there may be up to 5 monolayers on the surface.
- the term “partially” is understood to mean in particular less than 50%, and preferably less than 10%. Even more preferably, the specific molecule covers less than 1%, or even less than 0.1% of the surface to be bonded. Advantageously, it covers at least 0.05% of the surface to be bonded. According to a particularly advantageous embodiment, it covers from 0.05% to 1% of the surface to be bonded, and even more preferably from 0.05% to 0.1%.
- step c) the surfaces to be bonded (ie the hydrophilic surfaces 11, 21) are brought into contact, whereby an assembly is obtained comprising two substrates 10, 20 bonded to each other at their surfaces. hydrophilic 11, 21.
- Step c) is preferably carried out at ambient temperature (ie at a temperature of the order of 20 ° C.).
- the specific molecule 30 remains attached to the hydrophilic surface (s) 11, 21 and is enclosed at the bonding interface. It is trapped in the assembly and cannot evaporate.
- the assembly thus obtained comprises two substrates 10, 20, each covered by a hydrophilic surface 11, 21, the specific molecule 30 as defined above being placed between the two hydrophilic surfaces.
- the method may include a subsequent step during which thermal annealing is carried out after bonding.
- the thermal annealing after bonding allows the reinforcement of the direct bonding obtained in step c).
- the temperature of the thermal annealing ranges, for example, from 100 ° C to 1200 ° C. Preferably, the temperature ranges from 100 ° C to 500 ° C, and even more preferably from 100 ° C to 300 ° C.
- the bonding energies of the assembly, after annealing range from 600mJ to 5000mJ depending on the temperature of the thermal annealing. For example, for a temperature of 300 ° C, the bonding energy ranges from 3500mJ to 4000mJ.
- the wafers are silicon wafers with a diameter of 200 mm and a thickness of 725 ⁇ m. They were thermally oxidized to obtain a silicon oxide film 145 nm thick on the surface. They are then cleaned with ozonated water and SCI followed by SC2 (mixture of 30% hydrochloric acid, 30% hydrogen peroxide and 1: 1: 5 water) to make their surfaces hydrophilic.
- the specific molecule for bonding here is N, N-Diethyl-2-aminoethanol (CAS: 100-37-8).
- a beaker containing 10mL of the pure specific molecule (undiluted) is placed.
- the solution is allowed to evaporate in the closed reactor for 1 hour 30 minutes.
- two silicon wafers are placed in this atmosphere for 3min and then they are glued.
- the bonding wave is then about 8s to cross the 200mm which is equivalent to bonding without this molecule.
- the bond is annealed and the bond energies are measured at different temperatures.
- the bonding energy obtained with the specific molecule is greater than without the specific molecule (figure 3).
- the same results are obtained for periods of 30s, 8mn or 15mn of exposure.
- a beaker containing 1mL of water and 0.02mL of the specific molecule is placed in a reactor having a volume of about 50 or 100L.
- the solution is allowed to evaporate in the closed reactor for 1 hour 30 minutes.
- the two silicon wafers are placed in this atmosphere for 1 min and then they are glued.
- the collage wave is then about 8s to cross the 200mm which is equivalent to bonding without this molecule.
- the bond is annealed and the bond energies are measured at different temperatures. As shown in Figure 4, the bonding energy obtained with partial saturation of the surface is greater than when the surface is fully saturated. A lower concentration due to a lower saturating vapor pressure of the diluted solution provides better bonding energy for the entire temperature range.
- Figure 5 shows the bonding energy as a function of the dilution of the specific molecule solution.
- Example 3 partial saturation of the surface from a liquid solution:
- a solution containing 1% by volume of the specific molecule is deposited by spin coating on the surface of a plate: a jet of the water-product mixture is created on the surface which rotates at 30 revolutions per minute. until the entire surface is covered. Then, the dispensing of the product is stopped and it is turned at 2000 revolutions per minute for 30s to evacuate the surplus. Then we glue the two plates. The bonding wave is then about 8s to cross the 200mm which is equivalent to bonding without this molecule.
- Example 2 The bonding is annealed and the adhesion energies are measured at different temperatures, the same results are obtained as for Example 2.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20804618.5A EP4051743A1 (fr) | 2019-10-31 | 2020-10-20 | Procédé de collage de deux surfaces hydrophiles |
| JP2022525410A JP7635227B2 (ja) | 2019-10-31 | 2020-10-20 | 2つの親水性表面を結合する方法 |
| CN202080076923.9A CN114641546B (zh) | 2019-10-31 | 2020-10-20 | 接合两个亲水性表面的方法 |
| US17/755,450 US12577434B2 (en) | 2019-10-31 | 2020-10-20 | Method for bonding two hydrophilic surfaces |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FRFR1912269 | 2019-10-31 | ||
| FR1912269A FR3102771B1 (fr) | 2019-10-31 | 2019-10-31 | Procédé de collage de deux surfaces hydrophiles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2021084188A1 true WO2021084188A1 (fr) | 2021-05-06 |
Family
ID=69375579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FR2020/051888 Ceased WO2021084188A1 (fr) | 2019-10-31 | 2020-10-20 | Procédé de collage de deux surfaces hydrophiles |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12577434B2 (fr) |
| EP (1) | EP4051743A1 (fr) |
| JP (1) | JP7635227B2 (fr) |
| CN (1) | CN114641546B (fr) |
| FR (1) | FR3102771B1 (fr) |
| TW (1) | TWI877229B (fr) |
| WO (1) | WO2021084188A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4283660A1 (fr) * | 2022-05-25 | 2023-11-29 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Procédé de collage direct assisté par des élements cationiques |
| EP4283658A1 (fr) * | 2022-05-25 | 2023-11-29 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Procédé de collage direct assisté par une molécule basique |
| EP4283659A1 (fr) * | 2022-05-25 | 2023-11-29 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Procédé de collage direct assisté par une base forte |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023276638A1 (fr) * | 2021-06-30 | 2023-01-05 | ダイキン工業株式会社 | Procédé de production d'un corps multicouche, et corps multicouche |
| WO2025140983A1 (fr) | 2023-12-29 | 2025-07-03 | Soitec | Procédé de collage direct entre deux substrats |
| FR3159042A1 (fr) | 2024-02-07 | 2025-08-08 | Soitec | Procédé de collage direct entre deux substrats |
| WO2025140981A1 (fr) | 2023-12-29 | 2025-07-03 | Soitec | Procédé de collage direct entre deux substrats |
| FR3159044A1 (fr) | 2024-02-07 | 2025-08-08 | Soitec | Procédé de collage direct entre deux substrats |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013060726A1 (fr) * | 2011-10-26 | 2013-05-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de collage direct d'une couche d'oxyde de silicium |
| EP2750166A1 (fr) * | 2012-12-26 | 2014-07-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Traitement de surface par plasma chloré dans un procédé de collage |
| WO2015107290A2 (fr) * | 2014-01-14 | 2015-07-23 | Commissariat à l'énergie atomique et aux énergies alternatives | Procédé de placement et de collage de puces sur un substrat récepteur |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0649847B2 (ja) * | 1986-11-18 | 1994-06-29 | 株式会社スリ−ボンド | α−シアノアクリレ−ト系樹脂組成物用プライマ− |
| KR950702909A (ko) * | 1992-08-17 | 1995-08-23 | 패트릭 디. 쿠갠 | 입자 결합제 |
| US7919391B2 (en) * | 2004-12-24 | 2011-04-05 | S.O.I.Tec Silicon On Insulator Technologies | Methods for preparing a bonding surface of a semiconductor wafer |
| FR2980919B1 (fr) * | 2011-10-04 | 2014-02-21 | Commissariat Energie Atomique | Procede de double report de couche |
| EP2762535A1 (fr) * | 2013-02-04 | 2014-08-06 | Sika Technology AG | Prétraitement avec adhérence et stabilité en stockage améliorées |
| WO2016065132A1 (fr) * | 2014-10-23 | 2016-04-28 | Rasirc, Inc. | Procédé, système et dispositif pour l'acheminement de gaz de procédé |
| EP3616903B1 (fr) | 2017-04-28 | 2023-09-27 | Mitsui Chemicals, Inc. | Corps stratifié et méthode de fabrication d'un corps stratifié |
| CN110582728B (zh) * | 2017-05-02 | 2023-11-17 | 日产化学株式会社 | 耐受过氧化氢水溶液的保护膜形成用组合物 |
-
2019
- 2019-10-31 FR FR1912269A patent/FR3102771B1/fr active Active
-
2020
- 2020-09-23 TW TW109132945A patent/TWI877229B/zh active
- 2020-10-20 JP JP2022525410A patent/JP7635227B2/ja active Active
- 2020-10-20 EP EP20804618.5A patent/EP4051743A1/fr active Pending
- 2020-10-20 WO PCT/FR2020/051888 patent/WO2021084188A1/fr not_active Ceased
- 2020-10-20 US US17/755,450 patent/US12577434B2/en active Active
- 2020-10-20 CN CN202080076923.9A patent/CN114641546B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013060726A1 (fr) * | 2011-10-26 | 2013-05-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de collage direct d'une couche d'oxyde de silicium |
| EP2750166A1 (fr) * | 2012-12-26 | 2014-07-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Traitement de surface par plasma chloré dans un procédé de collage |
| WO2015107290A2 (fr) * | 2014-01-14 | 2015-07-23 | Commissariat à l'énergie atomique et aux énergies alternatives | Procédé de placement et de collage de puces sur un substrat récepteur |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4283660A1 (fr) * | 2022-05-25 | 2023-11-29 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Procédé de collage direct assisté par des élements cationiques |
| EP4283658A1 (fr) * | 2022-05-25 | 2023-11-29 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Procédé de collage direct assisté par une molécule basique |
| EP4283659A1 (fr) * | 2022-05-25 | 2023-11-29 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Procédé de collage direct assisté par une base forte |
| FR3136108A1 (fr) * | 2022-05-25 | 2023-12-01 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de collage direct assisté par des élements cationiques |
| FR3136107A1 (fr) * | 2022-05-25 | 2023-12-01 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de collage direct assisté par une base forte |
| FR3136106A1 (fr) * | 2022-05-25 | 2023-12-01 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de collage direct assisté par une molécule basique |
| US12532717B2 (en) | 2022-05-25 | 2026-01-20 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Cationic elements-assisted direct bonding method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240150617A1 (en) | 2024-05-09 |
| JP2023500279A (ja) | 2023-01-05 |
| FR3102771B1 (fr) | 2021-10-08 |
| US12577434B2 (en) | 2026-03-17 |
| FR3102771A1 (fr) | 2021-05-07 |
| EP4051743A1 (fr) | 2022-09-07 |
| CN114641546A (zh) | 2022-06-17 |
| JP7635227B2 (ja) | 2025-02-25 |
| TW202119472A (zh) | 2021-05-16 |
| TWI877229B (zh) | 2025-03-21 |
| CN114641546B (zh) | 2025-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP4051743A1 (fr) | Procédé de collage de deux surfaces hydrophiles | |
| EP2304787B1 (fr) | Traitement de surface par plasma d'azote dans un procédé de collage direct | |
| WO2007116038A1 (fr) | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures | |
| FR2903808A1 (fr) | Procede de collage direct de deux substrats utilises en electronique, optique ou opto-electronique | |
| EP4283658B1 (fr) | Procédé de collage direct assisté par une molécule basique | |
| EP4283659B1 (fr) | Procédé de collage direct assisté par une base forte | |
| FR3029352A1 (fr) | Procede d'assemblage de deux substrats | |
| WO2007006914A1 (fr) | Procede d'assemblage de substrats par depot d'une couche mince de collage d'oxyde ou de nitrure | |
| EP3166132A1 (fr) | Procede de fabrication de substrats | |
| EP3497711B1 (fr) | Procédé de fabrication d'une couche épitaxiée sur une plaque de croissance | |
| FR2939151A1 (fr) | Lingots formes d'au moins deux lingots elementaires, un procede de fabrication et une plaquette qui en est issue | |
| EP3961684B1 (fr) | Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substrat | |
| EP4519907A1 (fr) | Procédé de formation d'une couche à base d'un matériau diélectrique sur une couche à base d'un matériau iii-v gravé | |
| EP3503174A1 (fr) | Procede de transfert d'une couche utile | |
| WO2025140981A1 (fr) | Procédé de collage direct entre deux substrats | |
| FR3159044A1 (fr) | Procédé de collage direct entre deux substrats | |
| EP4668324A1 (fr) | Procede de collage direct de puces | |
| EP4258324A1 (fr) | Procédé de collage d'un premier substrat au niveau d'une surface présentant une nanotopologie élastique | |
| FR3107782A1 (fr) | Procédé de réalisation d’une couche à base de nitrure d’aluminium (AlN) sur une structure à base de silicium ou de matériaux III-V | |
| EP4341984A1 (fr) | Procédé de préparation d'un composant microélectronique comprenant une couche à base d'un matériau iii-v | |
| WO2025114242A1 (fr) | Procédé d'élaboration et de transfert d'un matériau bidimensionnel | |
| FR3112422A1 (fr) | Procédé de réalisation d’une couche diélectrique sur une structure en matériaux III-V | |
| FR3059149A1 (fr) | Procede de fabrication d'un film mince a base d'inp ou de gaas |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20804618 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 2022525410 Country of ref document: JP Kind code of ref document: A |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 17755450 Country of ref document: US |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| ENP | Entry into the national phase |
Ref document number: 2020804618 Country of ref document: EP Effective date: 20220531 |
|
| WWG | Wipo information: grant in national office |
Ref document number: 202080076923.9 Country of ref document: CN |
|
| WWG | Wipo information: grant in national office |
Ref document number: 17755450 Country of ref document: US |