WO2022056943A1 - 一种声学谐振器组件及滤波器 - Google Patents

一种声学谐振器组件及滤波器 Download PDF

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WO2022056943A1
WO2022056943A1 PCT/CN2020/116909 CN2020116909W WO2022056943A1 WO 2022056943 A1 WO2022056943 A1 WO 2022056943A1 CN 2020116909 W CN2020116909 W CN 2020116909W WO 2022056943 A1 WO2022056943 A1 WO 2022056943A1
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acoustic
acoustic resonator
layer
resonators
resonator
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French (fr)
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李林萍
盛荆浩
江舟
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Hangzhou Xinghe Technology Co Ltd
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Hangzhou Xinghe Technology Co Ltd
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Priority to EP20953801.6A priority Critical patent/EP4195504A4/en
Priority to JP2023517371A priority patent/JP7539101B2/ja
Priority to US18/025,126 priority patent/US11881839B2/en
Priority to KR1020237011290A priority patent/KR102641176B1/ko
Publication of WO2022056943A1 publication Critical patent/WO2022056943A1/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/48—Coupling means therefor
    • H03H9/52—Electric coupling means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/643—Means for obtaining a particular transfer characteristic the transfer characteristic being determined by reflective or coupling array characteristics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks

Definitions

  • the present application relates to the field of communication devices, and mainly relates to an acoustic resonator assembly and a filter.
  • the electromagnetic spectrum used in wireless communication has grown rapidly from 500MHz to above 5GHz, and the demand for RF front-end modules with high performance, low cost, low power consumption and small size is increasing. increase.
  • wireless communication equipment tends to develop in the direction of high integration and multi-function, and its development trend promotes the miniaturization development trend of RF front-end modules, and the miniaturized RF front-end modules are further realized.
  • the module integration and functional integration of wireless communication equipment are realized.
  • the miniaturization of the RF front-end module can not only realize the miniaturization of wireless communication equipment, but also increase the freedom of circuit design and bring new added value.
  • the filter is one of the RF front-end modules, which can improve the transmit and receive signals, and is mainly composed of multiple resonators connected by a topological network structure.
  • Fbar Thin film bulk acoustic resonator
  • the filter composed of Fbar has the advantages of small size, strong integration ability, high quality factor Q at high frequency operation, and strong power tolerance. core device.
  • the frequency design and performance optimization of the filter are based on the combined design of different resonators.
  • the combined design and differential design of frequency and bandwidth are firstly designed with different electrodes and piezoelectric film thicknesses in the active area of each resonator (generally). For two thicknesses), different thicknesses realize resonators of various frequencies and different performances, and high-performance filters are realized through the combined connection of resonators.
  • two types of resonators with different electrode and piezoelectric film thicknesses are generally implemented on the same substrate. If the thicknesses of some films on the cavity of a specific resonator are adjusted on the same substrate, more than two types of resonators can be realized.
  • Thickness, design and manufacturing difficulty will be greatly increased, requiring multiple lift-offs of the metal film layer, the cost will rise sharply and the yield will drop, and the complex film structure will have a greater impact on the top electrode structure, so There are also restrictions on the design.
  • the present application proposes an acoustic resonator assembly and a filter to solve the above-mentioned problems.
  • an embodiment of the present application proposes an acoustic resonator assembly, the acoustic resonator assembly includes at least two acoustic resonators vertically connected to each other, and the acoustic resonators include: acoustic mirrors respectively disposed on a substrate , a bottom electrode layer, a piezoelectric layer, and a top electrode layer, the effective area of the acoustic resonator is defined by the overlapping portion of the acoustic mirror, the bottom electrode layer, the piezoelectric layer, and the top electrode layer, and the acoustic resonator also includes a support layer, which is arranged in The acoustic mirror is projected on the substrate or the piezoelectric layer at the periphery of the area of the substrate, and at least two mutually perpendicularly connected acoustic resonators are connected on the support layer.
  • the top electrode layer and/or the bottom electrode layer of the acoustic resonator respectively have external connections extending from at least one side of the top electrode layer and/or the bottom electrode layer to above the support layer via the support layer Extend and connect to the outside. Connecting the external connection to the outside can realize the series or parallel connection of a plurality of resonators, and realize the series or parallel connection between two mutually perpendicularly connected acoustic resonators.
  • the external connection portion extending from at least one side of the top electrode layer forms a stepped structure, and forms an air gap with the piezoelectric layer and the support layer.
  • the air gap between the external connection and the piezoelectric layer and the support layer inhibits shear waves from coupling energy to the substrate and improves device performance.
  • the stepped structure of the external connection there are at least two steps in the stepped structure of the external connection.
  • the external connection parts of the stepped structure with different structures not only realize the electrical connection of the resonator, but also restrain the shear wave from coupling energy to the substrate, thereby improving the performance of the device.
  • the top electrode layer of the acoustic resonator has a mass-loading portion, the mass-loading portion is bridged on leads extending through the support layer and formed on the piezoelectric layer, and the leads form an air gap with the piezoelectric layer and the support layer.
  • the mass loading part is erected on the lead wire to form an acoustic impedance abrupt change region, which can reflect the shear wave, and suppress the shear wave from coupling energy to the substrate, thereby improving the device performance.
  • At least a portion of the projection of the air gap onto the substrate is within or at the boundary of the acoustic mirror.
  • the air gap can reflect shear waves and suppress shear waves from coupling energy into the substrate to improve device performance.
  • the top electrode layer on at least one side of the acoustic resonator and the corresponding at least one side of the other acoustic resonator or the lead wire connected with the top electrode layer extends to the middle of the two acoustic resonators and connects to form a suspension like structure.
  • the top electrode layers of the two vertically connected acoustic resonators are connected to each other to form a suspended structure, which can realize parallel connection between the two acoustic resonators.
  • the ends of the suspended structure extend toward the support layer and are not connected to the support layer.
  • the levitated structure like the support layer and the piezoelectric layer, forms an air gap that reflects shear waves and suppresses shear waves from coupling energy to the substrate to improve device performance.
  • the ends of the suspension-like structures extend toward the middle of the active area.
  • the end of the suspended structure tends to extend in the middle of the effective area, so that the electrode end on this side is vertically projected inside the acoustic mirror or coincides with the boundary of the acoustic mirror, so as to avoid the shear wave from coupling energy to the substrate and improve the performance of the resonator.
  • the air gap is filled with a low dielectric constant material.
  • Low dielectric constant materials can also reflect shear waves and suppress shear waves from coupling energy to the substrate to improve device performance, and can also improve device stability.
  • At least two mutually perpendicularly connected acoustic resonators are connected by bonding or welding.
  • the bonding or welding process is relatively mature, which can effectively control the cost.
  • At least two acoustic resonators that are vertically connected to each other are bonded to each other through a bonding layer disposed on the support layer, and the top electrode layer of the latter acoustic resonator is bonded to the top electrode layer of the other acoustic resonator.
  • the distance of the electrode layer in the active area is 10-20 ⁇ m. Under this distance condition, the top electrode layers of the two vertically bonded resonators will not affect each other.
  • electrodes of an acoustic resonator are connected in free combination with electrodes of another acoustic resonator to form a series structure and/or a parallel structure.
  • an embodiment of the present application further proposes a filter formed by connecting the acoustic resonator components mentioned in the first aspect.
  • a metal isolation layer is provided between the filters formed by adjacent two side-by-side acoustic resonator assemblies.
  • the bottom electrode layers of the acoustic resonators of two adjacent side-by-side acoustic resonator assemblies are on the same layer and connected to each other.
  • the bottom electrode layer can form a parallel structure while achieving electrical coupling.
  • the acoustic resonator further comprises a surface acoustic wave resonator
  • the interdigital transducer of the surface acoustic wave resonator has a connection extending from at least one side of the interdigital transducer over the support layer and to the outside
  • the connection part forms an air gap with the substrate and the support layer. Therefore, the series or parallel connection between the surface acoustic wave resonator and the surface acoustic wave resonator can be realized.
  • the acoustic resonators in the filter include at least one surface acoustic wave resonator. Therefore, the series or parallel connection between the surface acoustic wave resonator and the bulk acoustic wave resonator can be realized.
  • the present invention proposes an acoustic resonator assembly and a filter.
  • the acoustic resonator assembly includes at least two acoustic resonators that are vertically bonded to each other.
  • the acoustic resonator assembly is provided through a substrate or a piezoelectric layer arranged on the periphery of an area where the acoustic mirror is projected on the substrate.
  • the support layer on the support layer at least two mutually perpendicularly bonded acoustic resonators are bonded to each other through the bonding layer arranged on the support layer.
  • the bonded filter greatly reduces the area of the filter, so the area of each resonator can be increased at the appropriate sacrifice of the resonator area reduction rate.
  • acoustic resonators with different electrode and piezoelectric film thicknesses can be designed on the two substrates respectively, at least two kinds of acoustic resonator film thicknesses can be realized respectively, and the series resonance frequency of the acoustic resonators on the upper and lower substrates can be adjusted.
  • the resonant frequencies are adjusted separately by two substrates and then bonded to At the same time, it can greatly reduce the difficulty of design and process, improve the fault tolerance rate, greatly improve the degree of freedom of design and product performance, simplify the process and reduce the cost.
  • FIG. 1 shows a schematic structural diagram of an acoustic resonator of an acoustic resonator assembly according to one embodiment of the present invention
  • FIG. 2 shows a schematic structural diagram of the acoustic resonators of the acoustic resonator assembly according to the first embodiment of the present invention in parallel and the support layer on the piezoelectric layer;
  • Fig. 3 shows a schematic structural diagram of the acoustic resonator assembly of the acoustic resonator assembly according to the first embodiment of the present invention in parallel with the support layer on the substrate;
  • FIG. 4 shows a schematic structural diagram of the series-connected acoustic resonators of the acoustic resonator assembly according to the first embodiment of the present invention
  • FIG. 5 shows a schematic structural diagram of a parallel structure with two steps in the external connection part of the acoustic resonator of the acoustic resonator assembly according to the second embodiment of the present invention
  • FIG. 6 shows a schematic structural diagram of a series structure with two steps in the external connection part of the acoustic resonator of the acoustic resonator assembly according to the second embodiment of the present invention
  • FIG. 7 shows a schematic structural diagram of a parallel structure with two steps in the external connection parts of the acoustic resonators of the two acoustic resonator assemblies according to the second embodiment of the present invention
  • Fig. 8 shows a schematic structural diagram of parallel connection of acoustic resonators of the acoustic resonator assembly according to Embodiment 3 of the present invention
  • FIG. 9 shows a schematic structural diagram of the series-connected acoustic resonators of the acoustic resonator assembly according to Embodiment 3 of the present invention.
  • FIG. 10 shows a schematic structural diagram of an acoustic resonator having a suspended structure extending toward the support layer in the acoustic resonator assembly according to Embodiment 4 of the present invention
  • FIG. 11 shows a schematic structural diagram of an acoustic resonator having a suspended structure extending toward the center of the effective area in the acoustic resonator assembly according to Embodiment 4 of the present invention
  • FIG. 12 shows a schematic structural diagram of an acoustic resonator having a suspended structure extending toward the center of an effective area and an acoustic mirror being a Bragg reflection layer in the acoustic resonator assembly according to Embodiment 4 of the present invention
  • FIG. 13 shows a schematic structural diagram of a filter formed by an acoustic resonator with bottom electrode layer electrical coupling according to Embodiment 5 of the present invention
  • FIG. 14 shows a schematic structural diagram of a filter with a metal isolation layer between acoustic resonator components according to Embodiment 6 of the present invention
  • FIG. 15 shows a schematic structural diagram of a filter formed by connecting two surface acoustic wave resonators according to Embodiment 7 of the present invention.
  • FIG. 16 shows a schematic structural diagram of a filter formed by connecting a bulk acoustic wave resonator and a surface acoustic wave resonator according to Embodiment 7 of the present invention.
  • the acoustic resonator assembly includes at least two acoustic resonators vertically connected to each other.
  • the acoustic resonators include: Acoustic mirror 201, bottom electrode layer 301, piezoelectric layer 401, and top electrode layer 501, the effective area of the acoustic resonator is defined by the overlapping portion of acoustic mirror 201, bottom electrode layer 301, piezoelectric layer 401, and top electrode layer 501, acoustic
  • the mirror 201 includes a cavity or a Bragg reflection layer, and the cavity is mainly used in the following embodiments.
  • the acoustic resonator further includes a support layer 601, which is disposed on the substrate 101 or the piezoelectric layer 401 on the periphery of the area where the acoustic mirror 201 is projected on the substrate 101, and at least two acoustic resonators connected vertically to each other pass through the support layer 601. to connect.
  • the existence of the support layer 601 can ensure the mechanical stability of the lower acoustic resonator after connecting with the upper inverted acoustic resonator.
  • the material of the substrate 101 can be selected from Si/sapphire/spinel or the like.
  • the material of the support layer 601 is a dielectric material, such as Si/SiN/SU8/PI/SiO 2 and other insulating materials and low K materials (FSG, SiLK, BCB, Black Dimond (C-doped SiO 2 )).
  • Bottom electrode layer and top electrode layer are single metal or alloy such as Ti/Al/Cu/Au/Mo/Ru/Ni/W/Pt/TiN, piezoelectric layer is piezoelectric layer such as AlN/PZT/ZnO/LiTaO3/LiNbO3 Material.
  • At least two mutually perpendicularly connected acoustic resonators are connected by bonding or welding.
  • the bonding or welding process is relatively mature, which can effectively control the cost.
  • at least two acoustic resonators that are vertically connected to each other are bonded to each other through the bonding layer 711 provided on the support layer 611 , and the top electrode of the latter acoustic resonator is connected by bonding.
  • the distance between the layer 511 and the top electrode layer 511 of the other acoustic resonator in the active area is 10-20 ⁇ m.
  • the bonding layer 711 is mainly metal Au/Sn or bonding glue to ensure reliability after bonding.
  • the support layer 611 may be disposed on the substrate 111 .
  • the support layer 611 is directly connected to the substrate 111, and the connection between the support layer 611 and the substrate 111 has better mechanical stability than the connection between the support layer 611 and the piezoelectric layer 411, and the connection between the support layer 611 and the piezoelectric layer 411 can be simplified Process.
  • the top electrode layer 511 of the acoustic resonator is connected to the top electrode layer 511 of another acoustic resonator, and the bottom electrode layer 311 of the acoustic resonator is connected to the other acoustic resonator
  • the bottom electrode layers 311 are connected to form a parallel structure.
  • the top electrode layer 511 of the acoustic resonator is connected with the bottom electrode layer 311 of another acoustic resonator, and the bottom electrode layer 311 of the acoustic resonator is connected with the top electrode layer 511 of the other acoustic resonator , thus forming a series structure.
  • the top electrode layer 511 of the acoustic resonator has an external connection portion 811 extending from at least one side of the top electrode layer 511 to above the support layer 611 via the support layer 611 and connected to the outside.
  • the connection of the external connection part 811 to the outside can realize the series or parallel connection of a plurality of resonators, and realize the series or parallel connection between two mutually perpendicularly connected acoustic resonators.
  • the external connection portion 811 forms a stepped structure, and forms an air gap 911 with the piezoelectric layer 411 and the support layer 611 .
  • the air gap 911 can reflect shear waves and inhibit the shear waves from coupling energy to the substrate 111 to improve device performance.
  • the air gap 911 may be filled with a low dielectric constant material.
  • Low dielectric constant materials can also reflect shear waves and suppress shear waves from coupling energy to the substrate to improve device performance, and can also improve device stability.
  • the low dielectric constant material can be selected to be the same as the material of the support layer 611 and formed at the same time as the support layer 611 .
  • the air gap 911 may be formed by selectively removing the same low-k material as the support layer 611 after the bonding is completed.
  • the function of the support layer 611 is not only to improve the stability of the device, but also to support the external connection portion 811 to extend to the outside, to be electrically connected to the external structure, and to form an air gap 911 .
  • the difference between this embodiment is that the stepped structure of the external connection portion 821 has at least two steps.
  • the stepped structure of the external connection portion 821 may have two steps, and in some other embodiments, may also have multiple steps.
  • the external connection portion 821 of the stepped structure is provided when the top electrode layer 521 is electrically connected, and the air gap 921 formed with the piezoelectric layer 421 and the support layer 621 can inhibit the shear wave from coupling energy to the substrate 121 to improve device performance, and At least a portion of the air gap 921 is projected inside or on the boundary of the acoustic mirror 221 in a direction perpendicular to the substrate 121 .
  • FIG. 5 shows a parallel structure formed by bonding two upper and lower acoustic resonators to each other
  • FIG. 6 shows a series structure formed by bonding two upper and lower acoustic resonators to each other
  • FIG. 7 shows an acoustic resonator.
  • a parallel structure formed by the component and another acoustic resonator component wherein the acoustic resonator 1 is connected in series with the acoustic resonator 2, the acoustic resonator 2 is connected in parallel with the acoustic resonator 3, and the acoustic resonator 3 is connected in series with the acoustic resonator 4.
  • the difference between this embodiment and the first embodiment is that, as shown in FIG. 8 , the top electrode layer 531 of the acoustic resonator has a mass load part 532 , and the mass load part 532 is bridged between the support layer 631 and the piezoelectric layer 431 .
  • the lead 1031 formed by extending above the lead 1031 forms an air gap 931 with the piezoelectric layer 431 and the support layer 631 , and the lead 1031 above the support layer 631 is formed between the support layer 631 and the bonding layer 731 . At least a portion of the projection of the air gap 931 onto the substrate 131 is within or at the boundary of the acoustic mirror 231 .
  • the mass loading portion 532 is erected on the lead 1031 to form a sudden change in acoustic impedance region, which can reflect shear waves, and suppress shear waves from coupling energy to the substrate 131 to improve device performance.
  • FIG. 8 shows a parallel structure formed by bonding two upper and lower acoustic resonators to each other
  • FIG. 9 shows a series structure formed by bonding two upper and lower acoustic resonators to each other.
  • the difference between this embodiment and the first embodiment is that, as shown in FIG. 10 , the top electrode layer 541 on at least one side of the acoustic resonator and the top electrode layer 541 on the corresponding at least one side of the other acoustic resonator or the top electrode layer
  • the leads 1041 connected by 541 extend toward the middle of the two acoustic resonators and are connected to form a suspended structure 1042 .
  • the top electrode layers 541 of the two vertically bonded acoustic resonators are connected to each other to form a suspended structure 1042, which can realize parallel connection between the two acoustic resonators. As shown in FIG.
  • the top electrode layer 541 of at least one side of the acoustic resonator and the corresponding at least one side of another acoustic resonator extend toward the middle of the two acoustic resonators and are connected to form a suspension
  • the end of the suspended structure 1042 extends toward the support layer 641 and is not connected to the support layer 641 .
  • the suspension structure 1042 is also formed with an air gap 941 like the support layer 641 and the piezoelectric layer 441 , which can reflect shear waves and suppress shear waves from coupling energy to the substrate 141 to improve device performance.
  • the top electrode layer 541 on at least one side of the acoustic resonator and the corresponding at least one side of the other acoustic resonator or the lead 1041 connected with the top electrode layer 541 extend to the two sides.
  • the middle of the acoustic resonators is extended and connected to form a suspended structure 1042, and the end of the suspended structure 1042 extends to the middle of the effective area.
  • the end of the suspended structure 1042 tends to extend in the middle of the effective area, so that the electrode end on this side is vertically projected inside the acoustic mirror 241 or coincides with the boundary of the acoustic mirror 241, so as to avoid the shear wave from coupling the energy to the substrate 141 and improve the performance of the resonator .
  • it is more suitable for the SMR structure.
  • the Bragg reflection layer has very good mechanical stability relative to the cavity, so that the suspended structure 1042 tending to the middle of the effective area can be disposed at least on the top electrode layer 541 . On one side, even the entire top electrode layer 541 is surrounded.
  • the embodiment of the present application also proposes a filter formed by connecting the above-mentioned acoustic resonator components.
  • the frequency design and performance optimization of the filter are based on the combined design of different resonators.
  • the combined design and differential design of frequency and bandwidth are firstly designed in the active area of each resonator.
  • Different electrodes and piezoelectric film thicknesses generally For 2 thicknesses
  • different thicknesses realize resonators of various frequencies and different performances
  • high-performance filters are realized through the combined connection of resonators.
  • two types of resonators with different electrode and piezoelectric layer thicknesses are generally implemented on the same substrate.
  • resonators with different electrode and piezoelectric layer thicknesses can be designed on the two substrates, respectively, to achieve at least two resonator film thicknesses, and adjust the resonator on the upper and lower substrates.
  • At least 4 combinations of series resonant frequency and/or parallel resonant frequency can be realized, so instead of adjusting the series resonant frequency and/or parallel resonant frequency of all resonators on one substrate, the resonant frequency can be adjusted separately by two substrates. Bonding together can greatly reduce the difficulty of design and process and improve fault tolerance.
  • Embodiments 1 to 4 are the structures of filters formed based on any one of the acoustic resonator assemblies proposed in Embodiments 1 to 4.
  • the difference in this embodiment is that, as shown in FIG. 13 , the bottoms of the acoustic resonators of two adjacent acoustic resonator assemblies
  • the electrode layers 351 are on the same layer and connected to each other. In this case, the bottom electrode layer 351 can form a parallel structure while realizing electrical coupling.
  • the difference in this embodiment is that, as shown in FIG. 14 , the filter formed by two adjacent acoustic resonator assemblies A metal isolation layer 662 is disposed therebetween.
  • the left side 56 is two of the acoustic resonators that make up the receiver filter
  • the right side 78 is one of the two acoustic resonators that make up the transmitter filter.
  • the transmit filter and the receive filter, and the metal isolation layer 662 also plays a shielding role, and the receive filter, the transmit filter and the metal isolation layer are in the same die.
  • the transmitting filter and the receiving filter are respectively formed by connecting any one of the acoustic resonator components proposed in the first embodiment to the fourth embodiment.
  • the acoustic resonator further includes a surface acoustic wave resonator.
  • the surface acoustic wave resonates
  • the interdigital transducer of the device has a connection portion 871 extending from at least one side of the interdigital transducer 571 above the support layer 671 and connected to the outside, and the connection portion 871 forms an air gap 971 with the substrate 171 and the support layer 671 . Therefore, the series or parallel connection between the surface acoustic wave resonator and the surface acoustic wave resonator can be realized.
  • An embodiment of the present application also proposes a filter comprising the acoustic resonator according to the above mentioned.
  • the above acoustic resonator components are suitable for BAW filters of any structure and mode, including Fbar, SMR-BAW, CRF, SCF, SBAR, RBAR, DBAR, etc., and also suitable for any piezoelectric materials including ZnO, PZT, lithium carbonate LN, All device types of mems such as SAW resonators, piezoelectric devices, sensors, etc. made of any piezoelectric material such as lithium niobate LT.
  • the acoustic resonators in the filter include at least one surface acoustic wave resonator.
  • one of the connection structures of the bulk acoustic wave resonator and the surface acoustic wave resonator is shown, so that the series connection between the surface acoustic wave resonator and the bulk acoustic wave resonator can be realized or in parallel.
  • the present invention proposes an acoustic resonator assembly and a filter.
  • the acoustic resonator assembly includes at least two acoustic resonators that are vertically bonded to each other.
  • the acoustic resonator assembly is provided through a substrate or a piezoelectric layer arranged on the periphery of an area where the acoustic mirror is projected on the substrate.
  • the support layer on the support layer at least two mutually perpendicularly bonded acoustic resonators are bonded to each other through the bonding layer arranged on the support layer.
  • the bonded filter greatly reduces the area of the filter, so the area of each resonator can be increased at the appropriate sacrifice of the resonator area reduction rate.
  • acoustic resonators with different electrode and piezoelectric film thicknesses can be designed on the two substrates respectively, at least two kinds of acoustic resonator film thicknesses can be realized respectively, and the series resonance frequency of the acoustic resonators on the upper and lower substrates can be adjusted. and/or parallel resonant frequencies, at least four combinations can be achieved, so instead of adjusting the series resonant frequency and/or parallel resonant frequency of all acoustic resonators on one substrate, the resonant frequencies are adjusted separately by two substrates and then bonded to At the same time, it can greatly reduce the difficulty of design and process and improve the fault tolerance rate. It greatly improves the design freedom and product performance, simplifies the process and reduces the cost.
  • the bonded filter can effectively reduce the filter area by about 40% and the volume by about 65%, so that the filter occupies less space in the front-end module and improves space utilization.

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Abstract

本发明公开了一种声学谐振器组件及滤波器，声学谐振器组件包括至少两个相互垂直连接的声学谐振器，声学谐振器包括：分别设置在衬底上的声学镜、底电极层、压电层以及顶电极层，声学谐振器的有效区域由声学镜、底电极层、压电层和顶电极层的重叠部分定义，声学谐振器还包括支撑层，其设置在声学镜投影于衬底的区域外围的衬底或压电层上，至少两个相互垂直连接的声学谐振器通过在支撑层上进行连接。本发明加工的滤波器显著降低器件的体积65％以及面积40％，提升了设计自由度而降低设计难度，优化了工艺制程并提高工艺兼容性，增强了产品性能又大幅度降低成本。

Description

一种声学谐振器组件及滤波器 技术领域
本申请涉及通信器件领域，主要涉及一种声学谐振器组件及滤波器。
背景技术
随着电磁频谱的日益拥挤、无线通讯设备的频段与功能增多，无线通讯使用的电磁频谱从500MHz到5GHz以上高速增长，对性能高、成本低、功耗低、体积小的射频前端模块需求日益增长。加之，无线通讯设备随着无线通讯技术的高速发展越来越趋于高集成度与多功能方向发展，其发展趋势促进了射频前端模块的小型化发展趋势，小型化的射频前端模块又进一步实现了无线通讯设备的模块集成化与功能融合性。此外，射频前端模块的小型化不仅仅可以实现无线通讯设备的小型化，还可以增加电路设计的自由度，带来全新的附加价值。滤波器是射频前端模块之一，可改善发射和接收信号，主要由多个谐振器通过拓扑网络结构连接而成。Fbar(Thin film bulk acoustic resonator)是一种体声波谐振器，由Fbar组成的滤波器具有体积小、集成能力强、高频工作时保证高品质因素Q、功率承受能力强等优势而作为射频前端的核心器件。
滤波器的频率设计和性能优化是通过不同谐振器的组合设计，频率和带宽的组合设计与差异设计是首先在各个谐振器工作区域(active area)设计不同的电极和压电膜层厚度(一般为两种厚度)，不同厚度实现各种频率和差异性能的谐振器，通过谐振器的组合连接来实现高性能的滤波器。现有技术中，在同一衬底上一般会实现两种不同电极和压电薄膜厚度的谐振器，如果在同一衬底上调节特定谐振器的空腔上一些膜层的厚度实现两种以上的厚度，设计与制程上的难度将大大增加，需要经过多次金属薄膜层剥离工艺(lift-off)，成本会急剧上升且良率下降，膜层结构复杂之后对顶电极结构影响较大，因此对 设计也会带来限制。
有鉴于此，设计出一种新型的声学谐振器组件是非常具有意义的。
发明内容
针对上述提到现有技术中存在同一衬底上谐振器组合连接的难度大、成本高、良率低等问题。本申请提出了一种声学谐振器组件及滤波器来解决上述存在的问题。
在第一方面，本申请的实施例中提出了一种声学谐振器组件，声学谐振器组件包括至少两个相互垂直连接的声学谐振器，声学谐振器包括：分别设置在衬底上的声学镜、底电极层、压电层以及顶电极层，声学谐振器的有效区域由声学镜、底电极层、压电层和顶电极层的重叠部分定义，声学谐振器还包括支撑层，其设置在声学镜投影于衬底的区域外围的衬底或压电层上，至少两个相互垂直连接的声学谐振器通过在支撑层上进行连接。
在一些实施例中，声学谐振器的顶电极层和/或底电极层分别具有对外连接部，对外连接部从顶电极层和/或底电极层的至少一侧延伸到支撑层上方经由支撑层延伸并且连接到外部。对外连接部连接到外部可以实现多个谐振器的串联或并联，并且实现两个互相垂直连接的声学谐振器之间的串联或并联。
在一些实施例中，从顶电极层的至少一侧延伸出的对外连接部形成阶梯状结构，并与压电层以及支撑层形成空气隙。对外连接部与压电层和支撑层组成的空气隙可抑制横波将能量耦合到衬底从而提升器件性能。
在一些实施例中，对外连接部的阶梯状结构中至少具有两个台阶。不同结构的阶梯状结构的对外连接部既实现了谐振器的电气连接又抑制横波将能量耦合到衬底从而提升器件性能。
在一些实施例中，声学谐振器的顶电极层具有质量负载部，质量 负载部架设在经由支撑层并在压电层上延伸形成的引线上，引线与压电层以及支撑层形成空气隙。质量负载部架设在引线上形成声阻抗突变区域可以反射横波，并且抑制横波将能量耦合到衬底从而提升器件性能。
在一些实施例中，空气隙在衬底上的投影至少有一部分位于声学镜内或在声学镜的边界。空气隙可以反射横波并抑制横波将能量耦合到衬底从而提升器件性能。
在一些实施例中，声学谐振器的至少一侧与另一声学谐振器的相对应的至少一侧的顶电极层或者与顶电极层连接的引线向两个声学谐振器中间延伸并连接形成悬浮状结构。垂直连接的两个声学谐振器的顶电极层互相连接形成悬浮状结构，可以实现两个声学谐振器之间的并联。
在一些实施例中，悬浮状结构的末端向支撑层方向延伸并未与支撑层连接。悬浮状结构与支撑层和压电层同样形成有空气隙，可反射横波并抑制横波将能量耦合到衬底从而提升器件性能。
在一些实施例中，悬浮状结构的末端向有效区域中间延伸。悬浮状结构的末端趋于有效区域中间延伸，使得该侧的电极末端垂直方向上投影于声学镜内部或与声学镜边界重合，避免横波将能量耦合到衬底从而提升谐振器性能。
在一些实施例中，空气隙中填充有低介电常数材料。低介电常数材料同样也可以反射横波并抑制横波将能量耦合到衬底从而提升器件性能，并且还可以提高器件的稳定性。
在一些实施例中，至少两个相互垂直连接的声学谐振器通过键合或焊接的方式进行连接。键合或焊接的工艺都比较成熟，可有效控制成本。
在一些实施例中，至少两个相互垂直连接的声学谐振器通过设置 在支撑层上的键合层相互键合，键合连接后一个声学谐振器的顶电极层与另一声学谐振器的顶电极层在有效区域内的距离为10-20μm。在此距离条件下，垂直键合的两个谐振器的顶电极层不会相互影响。
在一些实施例中，声学谐振器的电极与另一声学谐振器的电极自由组合连接从而形成串联结构和/或并联结构。
在第二方面，本申请的实施例还提出了一种通过第一方面提到的声学谐振器组件连接形成滤波器。
在一些实施例中，相邻两个并排的声学谐振器组件所形成的滤波器之间设置有金属隔离层。
在一些实施例中，相邻两个并排的声学谐振器组件的声学谐振器的底电极层在同一层并且互相连接。在此情况下，底电极层实现电耦合的同时还能形成并联结构。
在一些实施例中，声学谐振器还包括声表面波谐振器，声表面波谐振器的叉指换能器具有从叉指换能器的至少一侧延伸到支撑层上方并且连接到外部的连接部，连接部与衬底以及支撑层形成空气隙。因此可以实现声表面波谐振器与声表面波谐振器之间的串联或并联。
在一些实施例中，滤波器中的声学谐振器包括至少一个声表面波谐振器。因此可以实现声表面波谐振器与体声波谐振器之间的串联或并联。
本发明提出了一种声学谐振器组件及滤波器，声学谐振器组件包括至少两个相互垂直键合的声学谐振器，通过设置在声学镜投影于衬底的区域外围的衬底或压电层上的支撑层，至少两个相互垂直键合的声学谐振器通过设置在支撑层上的键合层相互键合。键合而成的滤波器大幅度地降低了滤波器的面积，因此可以适当牺牲谐振器面积降低率来增加各个谐振器面积。键合前可分别在两个衬底上设计不同电极 和压电薄膜厚度的声学谐振器，至少分别实现两种声学谐振器膜层厚度，调节上下衬底上的声学谐振器的串联谐振频率和/或并联谐振频率，可以至少实现四种组合，因此相对于在一个衬底上调节所有声学谐振器的串联谐振频率和/或并联谐振频率，通过两个衬底分开调节谐振频率再键合到一起，可大大降低设计与制程的难度并提高容错率，并且大大提高了设计自由度和产品性能，简化了工艺制程并降低了成本。
附图说明
包括附图以提供对实施例的进一步理解并且附图被并入本说明书中并且构成本说明书的一部分。附图图示了实施例并且与描述一起用于解释本发明的原理。将容易认识到其它实施例和实施例的很多预期优点，因为通过引用以下详细描述，它们变得被更好地理解。附图的元件不一定是相互按照比例的。同样的附图标记指代对应的类似部件。
图1示出了根据本发明的其中一个实施例的声学谐振器组件的声学谐振器的结构示意图；
图2示出了根据本发明的实施例一的声学谐振器组件的声学谐振器并联且支撑层在压电层上的结构示意图；
图3示出了根据本发明的实施例一的声学谐振器组件的声学谐振器并联且支撑层在衬底上的结构示意图；
图4示出了根据本发明的实施例一的声学谐振器组件的声学谐振器串联的结构示意图；
图5示出了根据本发明的实施例二的声学谐振器组件的声学谐振器的对外连接部存在两个台阶的并联结构的结构示意图；
图6示出了根据本发明的实施例二的声学谐振器组件的声学谐振器的对外连接部存在两个台阶的串联结构的结构示意图；
图7示出了根据本发明的实施例二的两个声学谐振器组件的声学谐振器的对外连接部存在两个台阶的并联结构的结构示意图；
图8示出了根据本发明的实施例三的声学谐振器组件的声学谐振 器并联的结构示意图；
图9示出了根据本发明的实施例三的声学谐振器组件的声学谐振器串联的结构示意图；
图10示出了根据本发明的实施例四的声学谐振器组件中具有向支撑层延伸的悬浮状结构的声学谐振器的结构示意图；
图11示出了根据本发明的实施例四的声学谐振器组件中具有向有效区域中心延伸的悬浮状结构的声学谐振器的结构示意图；
图12示出了根据本发明的实施例四的声学谐振器组件中具有向有效区域中心延伸的悬浮状结构且声学镜为布拉格反射层的声学谐振器的结构示意图；
图13示出了根据本发明的实施例五的具有底电极层电耦合的声学谐振器所形成的滤波器的结构示意图；
图14示出了根据本发明的实施例六的声学谐振器组件之间具有金属隔离层的滤波器的结构示意图；
图15示出了根据本发明的实施例七的由两个声表面波谐振器连接形成的滤波器的结构示意图；
图16示出了根据本发明的实施例七的由体声波谐振器和声表面波谐振器连接形成的滤波器的结构示意图。
具体实施方式
下面结合附图和实施例对本申请作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释相关发明，而非对该发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与有关发明相关的部分。应当注意到，附图中的部件的尺寸以及大小并不是按照比例的，可能会为了明显示出的原因突出显示了某些部件的大小。
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本申请。
本申请的实施例中提出了一种声学谐振器组件，声学谐振器组件包括至少两个相互垂直连接的声学谐振器，如图1所示，声学谐振器 包括：分别设置在衬底101上的声学镜201、底电极层301、压电层401以及顶电极层501，声学谐振器的有效区域由声学镜201、底电极层301、压电层401和顶电极层501的重叠部分定义，声学镜201包括空腔或布拉格反射层，在以下的实施例中主要以空腔为主。声学谐振器还包括支撑层601，其设置在声学镜201投影于衬底101的区域外围的衬底101或压电层401上，至少两个相互垂直连接的声学谐振器通过在支撑层601上进行连接。支撑层601的存在可以保证下部的声学谐振器与上部倒置的声学谐振器连接后的机械稳定性。在可选的实施例中，衬底101的材料可以选择Si/蓝宝石/尖晶石等。支撑层601的材料为介电材料(dielectric material)，比如Si/SiN/SU8/PI/SiO 2等绝缘材料和low K材料(FSG、SiLK、BCB、Black Dimond(掺C的SiO 2))。底电极层与顶电极层为Ti/Al/Cu/Au/Mo/Ru/Ni/W/Pt/TiN等单一金属或合金，压电层为是AlN/PZT/ZnO/LiTaO3/LiNbO3等压电材料。
实施例一
在具体的实施例中，至少两个相互垂直连接的声学谐振器通过键合或焊接的方式进行连接。键合或焊接的工艺都比较成熟，可有效控制成本。在优选的实施例中，如图2所示，至少两个相互垂直连接的声学谐振器通过设置在支撑层611上的键合层711相互键合，键合连接后一个声学谐振器的顶电极层511与另一声学谐振器的顶电极层511在有效区域内的距离为10-20μm。在此距离条件下，垂直连接的两个谐振器的顶电极层511不会相互影响。在优选的实施例中，键合层711主要为金属Au/Sn或键合胶，保证键合后的可靠性。如图3所示，支撑层611可以设置在衬底111上。支撑层611与衬底111直接连接，支撑层611与衬底111相接比支撑层611与压电层411相接具 有更好的机械稳定性，支撑层611与压电层411相接可以简化制程。
在具体的实施例中，如图2所示，声学谐振器的顶电极层511与另一声学谐振器的顶电极层511相连接，并且声学谐振器的底电极层311与另一声学谐振器的底电极层311相连接，从而形成并联结构。如图4所示，声学谐振器的顶电极层511与另一声学谐振器的底电极层311相连接，并且声学谐振器的底电极层311与另一声学谐振器的顶电极层511相连接，从而形成串联结构。
如图2所示，声学谐振器的顶电极层511具有对外连接部811，对外连接部811从顶电极层511的至少一侧延伸到支撑层611上方经由支撑层611延伸并且连接到外部。对外连接部811连接到外部可以实现多个谐振器的串联或并联，并且实现两个互相垂直连接的声学谐振器之间的串联或并联。在具体的实施例中，对外连接部811形成阶梯状结构，并与压电层411以及支撑层611形成空气隙911。在优选的实施例中，空气隙911在衬底111上的投影至少有一部分位于声学镜211内或在声学镜211的边界。空气隙911可以反射横波并抑制横波将能量耦合到衬底111从而提升器件性能。在其他优选的实施例中，空气隙911中可以填充有低介电常数材料。低介电常数材料同样也可以反射横波并抑制横波将能量耦合到衬底从而提升器件性能，并且还可以提高器件的稳定性。其中，低介电常数材料可以选择与支撑层611的材料一样，并且与支撑层611同时形成。空气隙911可以为在键合完成后采用选择性去除与支撑层611相同的低介电常数材料所形成。支撑层611的作用除了提高器件的稳定性，还可以支撑对外连接部811延伸到外部，与外部结构进行电气相连，并形成空气隙911。
实施例二
本实施例与实施例一相比，其区别在于，对外连接部821的阶梯状结构中至少具有两个台阶。在优选的实施例中，如图5所示，对外 连接部821的阶梯状结构可以存在两个台阶，在其他一些实施例中，也可以具有多个台阶。同样，阶梯状结构的对外连接部821在顶电极层521电气连接时设置，与压电层421和支撑层621组成的空气隙921可抑制横波将能量耦合到衬底121从而提升器件性能，并且空气隙921的至少一部分在垂直于衬底121方向上投影于声学镜221内或边界。
在具体的实施例中，图5表示为上下两个声学谐振器互相键合形成的并联结构，图6表示为上下两个声学谐振器互相键合形成的串联结构，图7表示一个声学谐振器组件和另外一个声学谐振器组件形成的并联结构，其中声学谐振器①与声学谐振器②串联，声学谐振器②与声学谐振器③并联，声学谐振器③与声学谐振器④串联。
实施例三
本实施例与实施例一相比，其区别在于，如图8所示，声学谐振器的顶电极层531具有质量负载部532，质量负载部532架设在经由支撑层631并在压电层431上延伸形成的引线1031上，引线1031与压电层431以及支撑层631形成空气隙931，并且在支撑层631上方的引线1031形成在支撑层631与键合层731之间。空气隙931在衬底131上的投影至少有一部分位于声学镜231内或在声学镜231的边界。质量负载部532架设在引线1031上形成声阻抗突变区域可以反射横波，并且抑制横波将能量耦合到衬底131从而提升器件性能。在本实施例中，图8表示为上下两个声学谐振器互相键合形成的并联结构，图9表示为上下两个声学谐振器互相键合形成的串联结构。
实施例四
本实施例与实施例一相比，其区别在于，如图10所示，声学谐振器的至少一侧与另一声学谐振器的相对应的至少一侧的顶电极层541或者与顶电极层541连接的引线1041向两个声学谐振器中间延伸并连接形成悬浮状结构1042。垂直键合的两个声学谐振器的顶电极层541 互相连接形成悬浮状结构1042，可以实现两个声学谐振器之间的并联。如图10所示，在其中一个实施例中，声学谐振器的至少一侧与另一声学谐振器的相对应的至少一侧的顶电极层541向两个声学谐振器中间延伸并连接形成悬浮状结构1042，悬浮状结构1042的末端向支撑层641方向延伸并未与支撑层641连接。悬浮状结构1042与支撑层641和压电层441同样形成有空气隙941，可反射横波并抑制横波将能量耦合到衬底141从而提升器件性能。
在另外一个实施例中，如图11所示，声学谐振器的至少一侧与另一声学谐振器的相对应的至少一侧的顶电极层541或者与顶电极层541连接的引线1041向两个声学谐振器中间延伸并连接形成悬浮状结构1042，并且悬浮状结构1042的末端向有效区域中间延伸。悬浮状结构1042的末端趋于有效区域中间延伸，使得该侧的电极末端垂直方向上投影于声学镜241内部或与声学镜241边界重合，避免横波将能量耦合到衬底141而提升谐振器性能。在此情况下更适用于SMR结构，如图12所示，布拉格反射层相对空腔具有非常好的机械稳定性，使得趋于有效区域中部的悬浮状结构1042可至少设置在顶电极层541的一侧，甚至环绕整个顶电极层541。
本申请的实施例还提出了一种通过上述提到的声学谐振器组件连接形成滤波器。
滤波器的频率设计和性能优化是通过不同谐振器的组合设计，频率和带宽的组合设计与差异设计是首先在各个谐振器有效区域(active area)设计不同的电极和压电膜层厚度(一般为2种厚度)，不同厚度实现各种频率和差异性能的谐振器，通过谐振器的组合连接来实现高性能的滤波器。现有技术中，在同一衬底上一般会实现两种不同电极和压电层厚度的谐振器，如果在同一衬底上调节特定谐振器的空腔上一些膜层的厚度实现2种以上的厚度，设计与制程上的难度将大大 增加，需要经过多次金属薄膜层剥离工艺(lift-off)，成本会急剧上升且良率下降，膜层结构复杂之后对顶电极结构影响较大因此对设计也会带来限制。
在本申请的实施例中键合前可分别在两个衬底上设计不同电极和压电层厚度的谐振器，至少分别实现两种谐振器膜层厚度，调节上下衬底上的谐振器的串联谐振频率和/或并联谐振频率，可以至少实现4种组合，因此相对于在一个衬底上调节所有谐振器的串联谐振频率和/或并联谐振频率，通过两个衬底分开调节谐振频率再键合到一起，可大大降低设计与制程的难度并提高容错率。比如在同一个衬底上实现三种不同谐振器厚度时，在此技术方案中最多可以实现9种组合设计，大大提高了设计自由度和产品性能，简化了工艺制程并降低了成本。以下提出的实施例为基于实施例一到实施例四提出的任一一种声学谐振器组件所形成的滤波器的结构。
实施例五
在实施例一到实施例四提出的任意一种声学谐振器组件的基础上，本实施例的区别在于，如图13所示，相邻两个并排的声学谐振器组件的声学谐振器的底电极层351在同一层并且互相连接。在此情况下，底电极层351实现电耦合的同时还能形成并联结构。
实施例六
在实施例一到实施例四提出的任意一种声学谐振器组件的基础上，本实施例的区别在于，如图14所示，相邻两个并排的声学谐振器组件所形成的滤波器之间设置有金属隔离层662。左侧⑤⑥为组成接收端滤波器的其中两个声学谐振器，右侧⑦⑧为组成发射端滤波器的其中两个声学谐振器，发射滤波器与接收滤波器被金属隔离层662隔开，隔离发射滤波器和接收滤波器，同时金属隔离层662还起到屏蔽作用，并且接收滤波器、发射滤波器与金属隔离层在同一个die内。 其中，发射滤波器与接收滤波器分别由实施例一到实施例四提出的任一一种声学谐振器组件连接组成。
实施例七
在实施例一到实施例四提出的任一一种声学谐振器组件的基础上，本实施例的区别在于，声学谐振器还包括声表面波谐振器，如图15所示，声表面波谐振器的叉指换能器具有从叉指换能器571的至少一侧延伸到支撑层671上方并且连接到外部的连接部871，连接部871与衬底171以及支撑层671形成空气隙971。因此可以实现声表面波谐振器与声表面波谐振器之间的串联或并联。
本申请的实施例中还提出了一种滤波器，包括根据上述提到的声学谐振器。以上声学谐振器组件适用于任何结构和方式的BAW滤波器，包括Fbar、SMR-BAW、CRF、SCF、SBAR、RBAR、DBAR等，也适用于任何压电材料包括ZnO、PZT、碳酸锂LN、铌酸锂LT等任何压电材料制成的SAW谐振器、压电器件、传感器等mems类的所有器件类型。在具体的实施例中，滤波器中的声学谐振器包括至少一个声表面波谐振器。在其中一个实施例中，如图16所示，展示出了体声波谐振器和声表面波谐振器的其中一种连接结构，因此可以实现声表面波谐振器与体声波谐振器之间的串联或并联。
本发明提出了一种声学谐振器组件及滤波器，声学谐振器组件包括至少两个相互垂直键合的声学谐振器，通过设置在声学镜投影于衬底的区域外围的衬底或压电层上的支撑层，至少两个相互垂直键合的声学谐振器通过设置在支撑层上的键合层相互键合。键合而成的滤波器大幅度地降低了滤波器的面积，因此可以适当牺牲谐振器面积降低率来增加各个谐振器面积。键合前可分别在两个衬底上设计不同电极和压电薄膜厚度的声学谐振器，至少分别实现两种声学谐振器膜层厚度，调节上下衬底上的声学谐振器的串联谐振频率和/或并联谐振频 率，可以至少实现四种组合，因此相对于在一个衬底上调节所有声学谐振器的串联谐振频率和/或并联谐振频率，通过两个衬底分开调节谐振频率再键合到一起，可大大降低设计与制程的难度并提高容错率。大大提高了设计自由度和产品性能，简化了工艺制程并降低了成本。键合的滤波器可有效降低滤波器面积约40％，体积减少约65％，使滤波器在前端模块中占用更小的空间而提高空间利用率。
以上描述了本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以权利要求的保护范围为准。
在本申请的描述中，需要理解的是，术语“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。措词‘包括’并不排除在权利要求未列出的元件或步骤的存在。元件前面的措词‘一’或‘一个’并不排除多个这样的元件的存在。在相互不同从属权利要求中记载某些措施的简单事实不表明这些措施的组合不能被用于改进。在权利要求中的任何参考符号不应当被解释为限制范围。

Claims (18)

  1. 一种声学谐振器组件，其特征在于，所述声学谐振器组件包括至少两个相互垂直连接的声学谐振器，所述声学谐振器包括：分别设置在衬底上的声学镜、底电极层、压电层以及顶电极层，所述声学谐振器的有效区域由所述声学镜、所述底电极层、所述压电层和所述顶电极层的重叠部分定义，所述声学谐振器还包括支撑层，其设置在所述声学镜投影于所述衬底的区域外围的所述衬底或所述压电层上，所述至少两个相互垂直连接的声学谐振器通过在所述支撑层上进行连接。
  2. 根据权利要求1所述的声学谐振器组件，其特征在于，所述声学谐振器的顶电极层具有对外连接部，所述对外连接部从所述顶电极层的至少一侧延伸到所述支撑层上方经由所述支撑层延伸并且连接到外部。
  3. 根据权利要求2所述的声学谐振器组件，其特征在于，所述对外连接部形成阶梯状结构，并与所述压电层以及所述支撑层形成空气隙。
  4. 根据权利要求3所述的声学谐振器组件，其特征在于，所述对外连接部的阶梯状结构中至少具有两个台阶。
  5. 根据权利要求1所述的声学谐振器组件，其特征在于，所述声学谐振器的顶电极层具有质量负载部，所述质量负载部架设在经由所述支撑层并在所述压电层上延伸形成的引线上，所述引线与所述压电层以及所述支撑层形成空气隙。
  6. 根据权利要求3或5所述的声学谐振器组件，其特征在于，所述空气隙在所述衬底上的投影至少有一部分位于所述声学镜内或在所述声学镜的边界。
  7. 根据权利要求3或5所述的声学谐振器组件，其特征在于，所述空气隙中填充有低介电常数材料。
  8. 根据权利要求1所述的声学谐振器组件，其特征在于，所述声学谐振器的至少一侧与另一声学谐振器的相对应的至少一侧的所述顶电极层或者与所述顶电极层连接的引线向两个所述声学谐振器中间延伸并连接形成悬浮状结构。
  9. 根据权利要求8所述的声学谐振器组件，其特征在于，所述悬浮状结构的末端向所述支撑层方向延伸并未与所述支撑层连接。
  10. 根据权利要求8所述的声学谐振器组件，其特征在于，所述悬浮状结构的末端向所述有效区域中间延伸。
  11. 根据权利要求1所述的声学谐振器组件，其特征在于，所述至少两个相互垂直连接的声学谐振器通过键合或焊接的方式进行连接。
  12. 根据权利要求1所述的声学谐振器组件，其特征在于，所述至少两个相互垂直连接的声学谐振器通过设置在所述支撑层上的键合层相互键合，键合连接后一个所述声学谐振器的顶电极层与另一声学谐振器的顶电极层在有效区域内的距离为10-20μm。
  13. 根据权利要求1所述的声学谐振器组件，其特征在于，所述声学谐振器的电极与另一声学谐振器的电极自由组合连接从而形成串联结构和/或并联结构。
  14. 一种通过权利要求1-13中任一项所述的声学谐振器组件连接形成滤波器。
  15. 根据权利要求14所述的滤波器，其特征在于，相邻两个并排的所述声学谐振器组件所形成的滤波器之间设置有金属隔离层。
  16. 根据权利要求14所述的滤波器，其特征在于，相邻两个并排 的所述声学谐振器组件的所述声学谐振器的所述底电极层在同一层并且互相连接。
  17. 根据权利要求14所述的滤波器，其特征在于，所述声学谐振器还包括声表面波谐振器，所述声表面波谐振器的叉指换能器具有从所述叉指换能器的至少一侧延伸到所述支撑层上方并且连接到外部的连接部，所述连接部与所述衬底以及所述支撑层形成空气隙。
  18. 根据权利要求17所述的滤波器，其特征在于，所述滤波器中的所述声学谐振器包括至少一个所述声表面波谐振器。
PCT/CN2020/116909 2020-09-18 2020-09-22 一种声学谐振器组件及滤波器 Ceased WO2022056943A1 (zh)

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