WO2022217879A1 - 显示基板的制作方法、显示基板及显示装置 - Google Patents

显示基板的制作方法、显示基板及显示装置 Download PDF

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Publication number
WO2022217879A1
WO2022217879A1 PCT/CN2021/125518 CN2021125518W WO2022217879A1 WO 2022217879 A1 WO2022217879 A1 WO 2022217879A1 CN 2021125518 W CN2021125518 W CN 2021125518W WO 2022217879 A1 WO2022217879 A1 WO 2022217879A1
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sub
pixel
layer
pixel region
solution
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English (en)
French (fr)
Inventor
廖金龙
贾文斌
王红丽
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BOE Technology Group Co Ltd
Hefei BOE Joint Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Joint Technology Co Ltd
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Priority to EP21936746.3A priority Critical patent/EP4207328A4/en
Priority to US18/247,407 priority patent/US20230413654A1/en
Publication of WO2022217879A1 publication Critical patent/WO2022217879A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a manufacturing method of a display substrate, a display substrate and a display device.
  • organic electroluminescent devices As a new type of light-emitting device, organic electroluminescent devices (OLEDs) have shown great application potential in the fields of display and lighting, and thus have received strong attention from academia and industry. In the field of display, organic electroluminescent devices have the advantages of self-luminescence, fast response, wide viewing angle, high brightness, bright colors, and thinness compared with liquid crystal display devices (LCDs), and are considered as the next generation display technology.
  • LCDs liquid crystal display devices
  • an embodiment of the present disclosure provides a method for fabricating a display substrate, including:
  • a base substrate is provided, the base substrate includes a plurality of sub-pixel regions of different colors;
  • the solution is vacuum-dried to form the light-emitting functional layer with a uniform thickness.
  • the solution includes a first solvent and a second solvent that are mutually soluble, and the saturated vapor pressure of the first solvent is lower than the saturated vapor pressure of the second solvent.
  • the sub-pixel regions include: a plurality of red sub-pixel regions, a plurality of green sub-pixel regions, and a plurality of blue sub-pixel regions;
  • the solution for printing the light-emitting functional layer in the plurality of sub-pixel regions specifically includes:
  • the first solution of the light-emitting functional layer is printed in the plurality of red sub-pixel regions
  • the second solution of the light-emitting functional layer is printed in the plurality of green sub-pixel regions
  • the plurality of blue sub-pixels is printed with the first solution.
  • the vapor pressure is greater than or equal to the saturated vapor pressure of the third solution and less than or equal to the saturated vapor pressure of the first solution.
  • the ratio of the saturated vapor pressure of the first solution, the saturated vapor pressure of the second solution, and the saturated vapor pressure of the third solution is (2.5 -1):(2.5-1):1.
  • the volume ratio of the first solvent in the first solution, the second solution and the third solution increases sequentially, and the The volume ratio of the second solvent in the first solution, the second solution and the third solution decreases sequentially.
  • the volume ratio of the first solvent is 5%-30%, and the volume ratio of the second solvent is 70%-95%;
  • the volume ratio of the first solvent is 30%-60%, and the volume ratio of the second solvent is 40%-70%;
  • the volume ratio of the first solvent is 60%-95%, and the volume ratio of the second solvent is 5%-40%.
  • the first solvent is cumene, cumene, 1,3,5-trimethylbenzene, dimethylanisole and p-diethyl ether
  • the second solvent is one or any combination of chlorobenzene, cyclohexanone, and o-xylene.
  • the light-emitting functional layer is a hole injection layer or a light-emitting material layer, and the volume of the second solution is larger than the volume of the third solution and smaller than the volume of the third solution.
  • the volume of the first solution; the light-emitting functional layer is a hole transport layer, and the volume of the second solution is greater than or equal to the volume of the third solution and less than or equal to the volume of the first solution.
  • the light-emitting functional layer is a hole injection layer or a hole transport layer, and the concentration of the first solution, the concentration of the second solution, and the The concentration of the third solution is the same; the light-emitting functional layer is a light-emitting material layer, and the concentration of the first solution is greater than or equal to the concentration of the third solution and less than or equal to the concentration of the second solution.
  • the method further includes:
  • a pixel definition layer is formed on the base substrate, and the pixel definition layer has a first pixel opening in the red sub-pixel region, a second pixel opening in the green sub-pixel region, and a blue sub-pixel region.
  • the pixel region has a third pixel opening;
  • the area of the third pixel opening is smaller than the area of the second pixel opening and is larger than the area of the first pixel opening.
  • the plurality of green sub-pixel regions include: a plurality of first-type green sub-pixel regions and a plurality of second-type green sub-pixel regions;
  • the area of the first type of green sub-pixel region corresponding to the second pixel opening is larger than the area of the second type of green sub-pixel region corresponding to the second pixel opening;
  • the saturated vapor pressure of the first type of green sub-pixel region corresponding to the second solution is lower than the saturated vapor pressure of the second type of green sub-pixel region corresponding to the second solution.
  • the saturated vapor pressure of the first solution, the saturated vapor pressure of the first type of green sub-pixel region corresponding to the second solution, the second The ratio of the saturated vapor pressure of the second solution to the saturated vapor pressure of the third solution in the green-like sub-pixel region is 1.746:1.404:1.378:1.
  • the method further includes:
  • a plurality of first electrodes are formed in the plurality of sub-pixel regions.
  • the method further includes:
  • An electron transport layer, an electron injection layer and a second electrode are sequentially formed on the light-emitting functional layer.
  • an embodiment of the present disclosure provides a display substrate, including:
  • the base substrate has a plurality of sub-pixel regions with different light-emitting colors
  • a pixel definition layer located on the base substrate, and the pixel definition layer has a pixel opening in each of the sub-pixel regions;
  • a light-emitting functional layer is located on the side of the pixel defining layer away from the base substrate, the light-emitting functional layer is at least partially located in the pixel opening, and the light-emitting functional layer includes a central region away from the pixel defining layer, a climbing area in contact with the pixel-defining layer, and a transition area between the central area and the climbing area;
  • the difference between the thickness of the light-emitting functional layer in the central region and the target thickness of the light-emitting functional layer is less than or equal to 5 nm, and the thickness in the transition region is the same as the thickness of the light-emitting functional layer.
  • the difference between the target thickness of the light-emitting functional layer is greater than 5 nm and less than or equal to 20 nm, and the difference between the thickness in the climbing region and the target thickness of the light-emitting functional layer is greater than 20 nm.
  • 70%-90% of the entire projected area radiating outward from the center of the light-emitting functional layer that is approximately the same as the shape and outline of the pixel opening is the center.
  • the transition area is 5%-30% of the entire projected area with approximately the same shape and outline of the opening.
  • the thickness uniformity of the light-emitting functional layer in the pixel opening is positively correlated with the area of the pixel opening.
  • the sub-pixel area includes a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area
  • the pixel opening includes an area located in the first sub-pixel area. a first pixel opening in the sub-pixel region, a second pixel opening in the second sub-pixel region, and a third pixel opening in the third sub-pixel region, the third pixel opening having an area larger than the first pixel opening
  • the area of the pixel opening is smaller than the area of the second pixel opening;
  • the light-emitting functional layer includes a hole injection layer, a hole transport layer and a light-emitting material layer; the hole injection layer is located in the first pixel opening, in the third pixel opening, and in the second pixel opening
  • the thickness uniformity of the hole transport layer increases sequentially, the thickness uniformity of the hole transport layer in the first pixel opening, the third pixel opening, and the second pixel opening sequentially increases, and the luminescent material
  • the thickness uniformity of the layers in the first pixel opening, in the third pixel opening, and in the second pixel opening increases sequentially.
  • the sub-pixel region includes a first sub-pixel region, a second sub-pixel region and a third sub-pixel region, and the light-emitting functional layer includes a hole injection layer , hole transport layer and luminescent material layer;
  • the hole injection layer has an average thickness of 40 nm-50 nm in the first sub-pixel region, an average thickness of 40 nm-50 nm in the second sub-pixel region, and an average thickness of the third sub-pixel region. 30nm-40nm;
  • the hole transport layer has an average thickness of 20nm-28nm in the first sub-pixel region, an average thickness of 20nm-27nm in the second sub-pixel region, and an average thickness of the third sub-pixel region. 20nm-27nm;
  • the luminescent material layer has an average thickness of 120nm-135nm in the first sub-pixel region, an average thickness of 80nm-95nm in the second sub-pixel region, and an average thickness of 60nm in the third sub-pixel region -72nm.
  • the luminous efficiency of the first sub-pixel region is 11.5Cd/A-15.6Cd/A
  • the luminous efficiency of the second sub-pixel region is 35.1Cd /A-41.2Cd/A
  • the luminous efficiency of the third sub-pixel region is 33Cd/A-46Cd/A.
  • the sub-pixel region includes a first sub-pixel region, a second sub-pixel region and a third sub-pixel region, and the light-emitting functional layer includes a hole injection layer , hole transport layer and luminescent material layer;
  • the hole injection layer has an average thickness of 12 nm-20 nm in the first sub-pixel region, an average thickness of 6 nm-12 nm in the second sub-pixel region, and an average thickness of the third sub-pixel region. 6nm-12nm;
  • the hole transport layer has an average thickness of 21 nm-30 nm in the first sub-pixel region, an average thickness of 16 nm-26 nm in the second sub-pixel region, and an average thickness of the third sub-pixel region. 11nm-20nm;
  • the luminescent material layer has an average thickness of 87nm-105nm in the first sub-pixel region, an average thickness of 63nm-78nm in the second sub-pixel region, and an average thickness of 55nm in the third sub-pixel region -70nm.
  • the luminous efficiency of the first sub-pixel region is 16.8Cd/A-20.3Cd/A
  • the luminous efficiency of the second sub-pixel region is 36.5Cd /A-49.5Cd/A
  • the luminous efficiency of the third sub-pixel region is 32.4Cd/A-47.2Cd/A.
  • the above-mentioned display substrate provided in the embodiment of the present disclosure further includes: an electron transport layer, an electron injection layer and a second electrode sequentially arranged on the side of the luminescent material layer away from the base substrate; wherein, The electron transport layer, the electron injection layer and the second electrode respectively cover all of the sub-pixel regions.
  • the target thickness of the hole injection layer is the hole injection layer, 15%-17% of the sum of the thicknesses of the hole transport layer, the light-emitting material layer, the electron transport layer and the electron injection layer; in the third sub-pixel region, the hole injection layer The target thickness is 12%-15% of the sum of the thicknesses of the hole injection layer, the hole transport layer, the light-emitting material layer, the electron transport layer and the electron injection layer;
  • the target thickness of the hole transport layer is the hole injection layer, the hole transport layer, the luminescent material layer, the electron transport layer and the electron injection layer
  • the target thickness of the hole transport layer is the hole injection layer, the hole transport layer, the light-emitting material layer, 7%-10% of the sum of the thicknesses of the electron transport layer and the electron injection layer
  • the target thickness of the hole transport layer is the hole injection layer, the 9%-11% of the sum of the thicknesses of the hole transport layer, the light-emitting material layer, the electron transport layer and the electron injection layer;
  • the target thickness of the light-emitting material layer is the thickness of the hole injection layer, the hole transport layer, the light-emitting material layer, the electron transport layer and the electron injection layer. 38%-40% of the sum of the thicknesses; in the second sub-pixel area, the target thickness of the luminescent material layer is the hole injection layer, the hole transport layer, the luminescent material layer, the 30%-32% of the sum of the thicknesses of the electron transport layer and the electron injection layer; in the third sub-pixel region, the target thickness of the light-emitting material layer is the hole injection layer, the hole transport layer 25%-28% of the sum of the thicknesses of the layer, the luminescent material layer, the electron transport layer and the electron injection layer.
  • the target thickness of the hole injection layer is the hole injection layer, the hole transport layer, the hole injection layer, and the hole injection layer. 10%-14% of the sum of the thicknesses of the light-emitting material layer, the electron transport layer and the electron injection layer; in the second sub-pixel region, the target thickness of the hole injection layer is the hole 7%-13% of the sum of the thicknesses of the injection layer, the hole transport layer, the light-emitting material layer, the electron transport layer and the electron injection layer; in the third sub-pixel region, the empty The target thickness of the hole injection layer is 8%-15% of the sum of the thicknesses of the hole injection layer, the hole transport layer, the light-emitting material layer, the electron transport layer and the electron injection layer;
  • the target thickness of the hole transport layer is the hole injection layer, the hole transport layer, the luminescent material layer, the electron transport layer and the electron injection layer
  • the target thickness of the hole transport layer is the hole injection layer, the hole transport layer, the light-emitting material layer, 18%-25% of the sum of the thicknesses of the electron transport layer and the electron injection layer
  • the target thickness of the hole transport layer is the hole injection layer, the 15%-22% of the sum of the thicknesses of the hole transport layer, the light-emitting material layer, the electron transport layer and the electron injection layer;
  • the target thickness of the light-emitting material layer is the thickness of the hole injection layer, the hole transport layer, the light-emitting material layer, the electron transport layer and the electron injection layer. 63%-73% of the sum of the thicknesses; in the second sub-pixel region, the target thickness of the luminescent material layer is the hole injection layer, the hole transport layer, the luminescent material layer, the 62%-75% of the sum of the thicknesses of the electron transport layer and the electron injection layer; in the third sub-pixel region, the target thickness of the light-emitting material layer is the hole injection layer, the hole transport layer 63%-77% of the sum of the thicknesses of the layer, the luminescent material layer, the electron transport layer and the electron injection layer.
  • the pixel defining layer includes a first pixel partition wall and a second pixel partition wall, and the height of the first pixel partition wall is greater than that of the second pixel partition wall.
  • the height of the wall, adjacent to the first pixel partition wall defines a plurality of the sub-pixel regions, and adjacent to the second pixel partition wall defines one of the sub-pixel regions;
  • the same light-emitting functional layers are disposed in a plurality of the sub-pixel regions defined adjacent to the first pixel partition walls, and the height of the light-emitting functional layers is greater than the height of the second pixel partition walls;
  • the entirety of the plurality of sub-pixel regions defined by adjacent first pixel partition walls is elongated and distributed in a matrix
  • the short side of the whole body extends in the row direction, and the material of the light-emitting functional layer in all the whole body in the same column is the same, and is formed by one inkjet printing process.
  • the first pixel partition wall includes a first film layer and a second film layer located on the first film layer, and the second pixel partition wall The first film layer is included.
  • the colors of the sub-pixel regions in the same column are the same, the sub-pixel regions of the same color in the same column are connected through the first channel, and the sub-pixel regions of the same color in different columns are communicated through the second channel, and the same color in different columns is connected through the second channel.
  • the sub-pixel regions are not adjacent to each other.
  • the first channel and the second channel are formed after removing part or all of the pixel defining layer between the two sub-pixel regions.
  • an embodiment of the present disclosure provides a display device including the above-mentioned display substrate.
  • FIG. 1 is a flowchart of a method for fabricating a display substrate according to an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of a display substrate during a printing process according to an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of a solution system provided by an embodiment of the present disclosure.
  • Fig. 4 is another schematic diagram of the solution system provided by the embodiment of the present disclosure.
  • Fig. 5 is another schematic diagram of the solution system provided by the embodiment of the present disclosure.
  • FIG. 6 is a schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
  • FIG. 7 is another schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
  • FIG. 8 is another schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
  • FIG. 9 is another schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
  • Fig. 10 is the cross-sectional structure schematic diagram of A-A in Fig. 9;
  • Fig. 11 is the cross-sectional structure schematic diagram of B-B in Fig. 9;
  • FIG. 12 is another schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
  • FIG. 13 is another schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
  • a pixel defining layer (PDL) needs to be pre-fabricated to restrict the accurate flow of ink droplets into the designated RGB sub-pixel area.
  • the ink droplets need to be fully spread in the RGB sub-pixel, and the Does not overflow.
  • the inkjet printing process of OLED is being actively developed.
  • the vacuum drying of the organic wet film is the key process to determine the uniformity of the film thickness.
  • the uniformity of the entire solvent atmosphere has a great effect on the uniformity of the film thickness. necessary.
  • the functional layer solvent systems and proportions in the sub-pixel regions of different colors are the same, and the saturated vapor pressure of the formed solution is the same.
  • the volume of ink droplets printed in the RGB sub-pixel area it is difficult for the volume of ink droplets printed in the RGB sub-pixel area to be the same.
  • an embodiment of the present disclosure provides a manufacturing method of a display substrate, as shown in FIG. 1 , including the following steps:
  • the volume of the solution in the sub-pixel regions of different colors is positively correlated with the saturated vapor pressure of the solution, so that the drying rates of the solutions of different volumes in the sub-pixel regions of different colors are basically the same, so that different
  • the time taken for the solvent in the color sub-pixel area to completely volatilize is basically the same, that is to say, during the VCD process, the solvent atmosphere in the different color sub-pixel area is the same, and the drying environment of the film layer in the different color sub-pixel area is the same, so The difficulty of the VCD process is reduced, and the film thickness uniformity of the sub-pixel regions of different colors is compatible.
  • the solution in order to facilitate the adjustment of the saturated vapor pressure of the solution, may include a first solvent and a second solvent that are mutually soluble, and the saturated vapor pressure of the first solvent is smaller than that of the second solvent. Saturated vapor pressure.
  • the solution may only include a first solvent and a second solvent that are mutually miscible, where the saturated vapor pressure of the solution is equal to the product of the saturated vapor pressure of the first solvent and the volume fraction of the first solvent in the solution, and The sum of the product of the saturated vapor pressure of the second solvent and the volume fraction of the second solvent in the solution.
  • the sub-pixel regions may include: a plurality of red sub-pixel regions R, a plurality of green sub-pixel regions G, and a plurality of blue sub-pixel regions sub-pixel area B;
  • Step S102 is to print the solution of the light-emitting functional layer in a plurality of sub-pixel regions, which can be specifically implemented in the following ways:
  • the first solution of the light-emitting functional layer is printed in the plurality of red sub-pixel regions R (as shown in FIG. 3 ), and the second solution of the light-emitting functional layer is printed in the plurality of green sub-pixel regions G (as shown in FIG. 4 ).
  • the plurality of blue sub-pixel regions B print the third solution of the light-emitting functional layer (as shown in FIG. 5 ); wherein, the volume of the second solution is greater than or equal to the volume of the third solution and less than or equal to the volume of the first solution, and the volume of the second solution is greater than or equal to that of the third solution.
  • the saturated vapor pressure of the second solution is greater than or equal to the saturated vapor pressure of the third solution and less than or equal to the saturated vapor pressure of the first solution.
  • the above conditions can make the film thickness of the light-emitting functional layer in the red sub-pixel region R, green sub-pixel region G and blue sub-pixel region B decrease sequentially, so as to satisfy the requirements in the red sub-pixel region R, green sub-pixel region G and blue sub-pixel region.
  • the film thickness of the light-emitting functional layer formed in the sub-pixel region B has the same trend as the film thickness in the related art; and the above conditions can also make the first solution, the second solution and the third solution volatilize almost simultaneously, so as to take into account the red color
  • the film thickness uniformity of the light-emitting functional layer in the sub-pixel region R, green sub-pixel region G and blue sub-pixel region B ensures the effective aperture ratio of the red sub-pixel region R, green sub-pixel region G and blue sub-pixel region B , improve device life.
  • the ratio of the saturated vapor pressure of the first solution, the saturated vapor pressure of the second solution, and the saturated vapor pressure of the third solution may be (2.5-1) :(2.5-1):1.
  • the volume ratio of the first solvent in the first solution, the second solution and the third solution can be increased in sequence, and the volume ratio of the second solvent in the first solution, the second solution and the third solution decreasing in sequence to ensure that the saturated vapor pressures of the first solution, the second solution and the third solution decrease sequentially. In this way, it can be ensured that the complete volatilization time of the first solution, the second solution and the third solution is approximately the same during the simultaneous VCD cooling and drying process, which reduces the technological difficulty of VCD and improves the uniformity of film thickness.
  • the method in order to ensure that the saturated vapor pressures of the first solution, the second solution, and the third solution are sequentially reduced, as shown in FIG. 3 to FIG.
  • the method is realized: in the first solution, the volume ratio of the first solvent a is 5%-30%, and the volume ratio of the second solvent b is 70%-95%; in the second solution, the volume ratio of the first solvent a is The volume ratio is 30%-60%, and the volume ratio of the second solvent b is 40%-70%; in the third solution, the volume ratio of the first solvent a is 60%-95%, and the volume ratio of the second solvent b is 60%-95%.
  • the volume ratio is 5%-40%.
  • the first solvent a may be cumene, cumene, 1,3,5-trimethylbenzene, dimethylanisole, and paraben
  • the second solvent b can be one or any combination of chlorobenzene, cyclohexanone, and o-xylene.
  • the first solvent a and the second solvent b can also be selected from other solvents known to those skilled in the art that are mutually soluble and have good solubility for the material of the light-emitting functional layer, which is not specifically limited here.
  • the light-emitting functional layer may be a hole injection layer HIL or a light-emitting material layer EML
  • the volume of the second solution may be greater than the volume of the third solution and may be smaller than the volume of the first solution
  • the light-emitting functional layer may also be a hole transport layer HTL
  • the volume of the second solution may be greater than or equal to the volume of the third solution and may be less than or equal to the volume of the first solution.
  • the first solution in order to match the luminous efficiency in each sub-pixel region, when the luminescent functional layer is a hole injection layer HIL or a hole transport layer HTL, the first solution
  • the concentration, the concentration of the second solution, and the concentration of the third solution can be the same; when the light-emitting functional layer is the light-emitting material layer EML, the concentration of the first solution can be greater than or equal to the concentration of the third solution and can be less than or equal to the concentration of the second solution. concentration.
  • step S101 is performed to provide a base substrate
  • step S102 is performed to print the solution of the light-emitting functional layer in each sub-pixel area, as shown in FIG. 6 shown
  • a pixel defining layer PDL is formed on the base substrate PI.
  • the pixel defining layer PDL has a first pixel opening K1 in the red sub-pixel region R, a second pixel opening K2 in the green sub-pixel region G, and a blue sub-pixel region.
  • B has a third pixel opening K3; the area of the third pixel opening K3 may be smaller than that of the second pixel opening K2 and may be larger than that of the first pixel opening K1.
  • the pixel defining layer PDL with different opening sizes can restrict the solution to flow into the RGB sub-pixel regions accurately.
  • the plurality of green sub-pixel regions G include: a plurality of first-type green sub-pixel regions G1 and a plurality of second-type green sub-pixel regions G2;
  • the area of the first-type green sub-pixel region G1 corresponding to the second pixel opening K2 is larger than the area of the second-type green sub-pixel region G2 corresponding to the second pixel opening K2;
  • the first-type green sub-pixel region G1 corresponding to the saturated vapor pressure of the second solution is less than
  • the second type of green sub-pixel region G2 corresponds to the saturated vapor pressure of the second solution.
  • the second solution in the first-type green sub-pixel region G1 and the second solution in the second-type green sub-pixel region G2 can be volatilized almost simultaneously, thereby ensuring that the first-type green sub-pixel region G1 and the second-type green sub-pixel region G1 The film thickness uniformity of the pixel region G2.
  • the saturated vapor pressure of the first solution, the saturated vapor pressure of the first type of green sub-pixel area corresponding to the second solution, and the second type of green sub-pixel area may be 1.746:1.404:1.378:1.
  • step S101 is performed to provide a base substrate
  • step S102 is performed to provide a base substrate
  • steps S102 are performed to form a pixel defining layer PDL on the base substrate PI, as shown in FIG. 6 shown
  • a plurality of first electrodes Anode are formed in a plurality of sub-pixel regions.
  • step S103 is performed to vacuum dry the solution to form a light-emitting functional layer with a uniform film thickness
  • the following steps may also be performed:
  • the electron transport layer ETL, the electron injection layer EIL and the second electrode Cathode are sequentially formed on the light-emitting functional layer (specifically, the light-emitting material layer EML).
  • the embodiment of the present disclosure also provides a display substrate. Since the principle of solving the problem of the display substrate is similar to the principle of solving the problem of the above-mentioned manufacturing method, the implementation of the display substrate provided by the embodiment of the present disclosure can refer to this document. The implementation of the above-mentioned manufacturing method provided by the disclosed embodiments will not be repeated for repeated parts.
  • the above-mentioned display substrate provided by the embodiments of the present disclosure may include:
  • the base substrate PI has a plurality of sub-pixel regions P with different emission colors
  • a pixel defining layer PDL located on the base substrate PI, the pixel defining layer PDL has a pixel opening K in each sub-pixel region;
  • the light-emitting functional layer EL is located on the side of the pixel defining layer PDL away from the base substrate PI, and the light-emitting functional layer EL is at least partially located in the pixel opening K.
  • the light-emitting functional layer EL may include a central area d away from the pixel defining layer PDL, and the pixel defining the climbing area f of the layer PDL contact, and the transition area e between the central area d and the climbing area f;
  • the difference between the thickness h1 of the light-emitting functional layer EL in the central region d and the target thickness of the light-emitting functional layer EL can be less than or equal to 5 nm, the thickness h2 in the transition region e and the light-emitting functional layer EL
  • the difference between the target thicknesses of EL may be greater than 5 nm and less than or equal to 20 nm, and the difference between the thickness h3 of the climbing region f and the target thickness of the light-emitting functional layer EL may be greater than 20 nm.
  • the target thickness of the light-emitting functional layer EL specifically refers to the design thickness of the light-emitting functional layer EL, and the thickness h1 of the central area d, the thickness h2 of the transition area e, and the thickness h3 of the climbing area f are all Refers to the actual thickness of each zone in the product.
  • the thickness of the first electrode Anode formed in the bottom emission display device before fabricating the pixel defining layer PDL is 70 nm.
  • the target thickness of the hole injection layer HIL is 30 nm
  • the thickness of the central region d is 30 nm-35 nm
  • the thickness of the transition region e is 35-50 nm
  • the thickness of the transition region c is greater than or equal to 50nm
  • the target thickness of the hole transport layer HTL is 20nm
  • the thickness of the central region d is 20nm-25nm
  • the thickness of the transition region e is 25nm-40nm
  • the thickness of the climbing region f is greater than 40nm
  • the target thickness of the EML is 60 nm
  • the thickness of the central region d is 60 nm-65 nm
  • the thickness of the transition region e is 65 nm-80 nm
  • the thickness of the climbing region f is greater than 80 nm.
  • the target thickness of the hole injection layer HIL is 40nm, the thickness of the central region d is 40nm-45nm, the thickness of the transition region e is 45-60nm, and the thickness of the transition region c is greater than or equal to 60nm;
  • the target thickness of the hole transport layer HTL is 20nm, the thickness of the central region d is 20nm-25nm, the thickness of the transition region e is 25nm-40nm, and the thickness of the climbing region f is greater than or equal to 40nm;
  • the target of the green luminescent material layer G-EML The thickness is 80nm, the thickness of the central region d is 80nm-85nm, the thickness of the transition region e is 85nm-100nm, and the thickness of the climbing region f is greater than or equal to 100nm.
  • the target thickness of the hole injection layer HIL is 40nm, the thickness of the central region d is 40nm-45nm, the thickness of the transition region e is 45-60nm, and the thickness of the transition region c is greater than or equal to 60nm;
  • the target thickness of the hole transport layer HTL is 20nm, the thickness of the central region d is 20nm-25nm, the thickness of the transition region e is 25nm-40nm, and the thickness of the climbing region f is greater than or equal to 40nm;
  • the target of the red luminescent material layer R-EML The thickness is 120nm, the thickness of the central region d is 120nm-125nm, the thickness of the transition region e is 125nm-140nm, and the thickness of the climbing region f is greater than or equal to 140nm.
  • the thickness of the first electrode Anode formed before the pixel defining layer PDL is formed in the bottom emission display device is 15 nm.
  • the target thickness of the hole injection layer HIL is 6 nm
  • the thickness of the central region d is 6 nm-11 nm
  • the thickness of the transition region e is 11-26 nm
  • the thickness of the transition region c is greater than or equal to 26nm
  • the target thickness of the hole transport layer HTL is 11nm
  • the thickness of the central region d is 11nm-16nm
  • the thickness of the transition region e is 16nm-31nm
  • the thickness of the climbing region f is greater than 31nm
  • the target thickness of the EML is 55 nm
  • the thickness of the central zone d is 55 nm-60 nm
  • the thickness of the transition zone e is 60 nm-75 nm
  • the thickness of the climbing zone f is greater than 75 nm.
  • the target thickness of the hole injection layer HIL is 6 nm
  • the thickness of the central region d is 6 nm-11 nm
  • the thickness of the transition region e is 11-26 nm
  • the thickness of the transition region c is greater than or equal to 26 nm
  • the target thickness of the hole transport layer HTL is 16nm
  • the thickness of the central region d is 16nm-21nm
  • the thickness of the transition region e is 21nm-36nm
  • the thickness of the climbing region f is greater than or equal to 36nm
  • the thickness is 63nm
  • the thickness of the central region d is 63nm-68nm
  • the thickness of the transition region e is 68nm-83nm
  • the thickness of the climbing region f is greater than or equal to 83nm.
  • the target thickness of the hole injection layer HIL is 12 nm, the thickness of the central region d is 12 nm-17 nm, the thickness of the transition region e is 17-32 nm, and the thickness of the transition region c is greater than or equal to 32 nm;
  • the target thickness of the hole transport layer HTL is 21nm, the thickness of the central region d is 21nm-26nm, the thickness of the transition region e is 26nm-41nm, and the thickness of the climbing region f is greater than or equal to 41nm;
  • the target of the red luminescent material layer R-EML The thickness is 87nm, the thickness of the central region d is 87nm-92nm, the thickness of the transition region e is 92nm-107nm, and the thickness of the climbing region f is greater than or equal to 107nm.
  • 70%-90% of the entire projected area radiating from the center of the light-emitting functional layer EL and having approximately the same shape as the pixel opening K may be the central area a, 0-5% of the entire projected area covering the pixel defining layer PDL and the pixel opening K shape outline approximately the same can be a climbing area f, between the climbing area f and the central area a is approximately the same as the pixel opening K shape outline 5%-30% of the entire projected area can be the transition zone e.
  • the central area d accounts for 70%-90% of the area of the light-emitting functional layer EL
  • the climbing area f only accounts for 0%-5% of the area of the light-emitting functional layer EL
  • the area between the central area d and the climbing area f The transition region e accounts for 5%-30% of the area of the light-emitting functional layer EL.
  • the thickness uniformity of the light emitting functional layer EL in the pixel opening K may be positively correlated with the area of the pixel opening K. In other words, the larger the area of the pixel opening K, the better the thickness uniformity of the light emitting functional layer EL.
  • the sub-pixel region may include a first sub-pixel region, a second sub-pixel region and a third sub-pixel region, and the pixel opening K It includes a first pixel opening K1 located in the first sub-pixel region, a second pixel opening K2 located in the second sub-pixel region, and a third pixel opening K3 located in the third sub-pixel region.
  • the area of the third pixel opening K3 may be larger than that of the third pixel opening K3.
  • the area of one pixel opening K1 is smaller than the area of the second pixel opening K2;
  • the light-emitting functional layer EL may include a hole injection layer HIL, a hole transport layer HTL, and a light-emitting material layer EML; the hole injection layer HIL is located in the first pixel opening K1, the third pixel opening K3, and the second pixel opening K2.
  • the thickness uniformity increases sequentially, the thickness uniformity of the hole transport layer HTL increases in the first pixel opening K1, the third pixel opening K3, and the second pixel opening K2 in turn, and the luminescent material layer EML is in the first pixel opening.
  • the thickness uniformity in K1, in the third pixel opening K3, and in the second pixel opening K2 increases sequentially.
  • the first sub-pixel region, the second sub-pixel region and the third sub-pixel region may be a red sub-pixel region R, a green sub-pixel region G, and a blue sub-pixel region B in sequence.
  • a 55inch 4K bottom emission product description where the aperture ratio of the green sub-pixel region G (equivalent to the ratio of the area of the pixel opening to the area of the sub-pixel region) > the aperture ratio of the blue sub-pixel region B > the red sub-pixel region R
  • the aperture ratio in some embodiments, the aperture ratio of the green sub-pixel region G is 23.6%, the aperture ratio of the blue pixel region B is 20.5%, and the aperture ratio of the red sub-pixel region R is 19.8%.
  • the morphological trends of the hole injection layer HIL, the hole transport layer HTL and the luminescent material layer EML are basically the same, and the morphology of the hole injection layer HIL determines the Topography, according to the topography of HIL, the climbing trend (that is, the U-shaped upward trend) in the direction of the long side g and the short side h (as shown in Figure 8) of the pixel opening K is the green sub-pixel area G> The blue sub-pixel region B>the red sub-pixel region R.
  • the film thickness uniformity of HIL, HTL, and EML in the green sub-pixel region G is 76.2%, 80%, and 86.2%, respectively, and the film thickness uniformity of HIL, HTL, and EML in the blue sub-pixel region B is
  • the film thickness uniformity of HIL, HTL and EML in the red sub-pixel region R is 71.6%, 74.1% and 80.5% in sequence.
  • the uniformity of the film thickness is equal to the percentage of the area of the central region d of the film layer to the area of the light-emitting functional layer EL.
  • the display substrate provided by the present disclosure can be applied to a 55ich 4K bottom emission display device, wherein the thickness of the first electrode Anode is 70 nm, and the average thickness of the hole injection layer HIL in the first sub-pixel region is 40 nm -50nm, the average thickness in the second subpixel area is 40nm-50nm, and the average thickness in the third subpixel area is 30nm-40nm; the average thickness of the hole transport layer HTL in the first subpixel area is 20nm-28nm, The average thickness in the second sub-pixel region is 20nm-27nm, and the average thickness in the third sub-pixel region is 20nm-27nm; the average thickness of the luminescent material layer EML in the first sub-pixel region is 120nm-135nm, in the second sub-pixel region The average thickness of the pixel area is 80nm-95nm, and the average thickness of the third sub-pixel area is 60nm-72nm; the luminous efficiency of the first sub-pixel area
  • the average thickness of the film layer is equal to the weighted average of the central area d, the transition area e and the climbing area f in the sub-pixel area.
  • the display substrate can be applied to a 55ich 8K bottom emission display device, the thickness of the first electrode Anode is 15nm, the average thickness of the hole injection layer HIL in the first sub-pixel region can be 12nm-20nm, The average thickness of the sub-pixel region may be 6nm-12nm, and the average thickness of the third sub-pixel region may be 6nm-12nm; the average thickness of the hole transport layer in the first sub-pixel region is 21nm-30nm, and the second sub-pixel region.
  • the average thickness of the region is 16nm-26nm, and the average thickness in the third subpixel region is 11nm-20nm; the average thickness of the luminescent material layer in the first subpixel region is 87nm-105nm, and the average thickness in the second subpixel region is 63nm-78nm, the average thickness in the third sub-pixel area is 55nm-70nm; the luminous efficiency of the first sub-pixel area is 16.8Cd/A-20.3Cd/A, and the luminous efficiency of the second sub-pixel area is 36.5Cd/A -49.5Cd/A, the luminous efficiency of the third sub-pixel area is 32.4Cd/A-47.2Cd/A.
  • the above-mentioned display substrate provided by the embodiments of the present disclosure may further include: an electron transport layer ETL, an electron injection layer and an electron injection layer arranged in sequence on the side of the light-emitting material layer EML away from the base substrate PI. layer EIL and the second electrode Cathode; wherein, the electron transport layer ETL, the electron injection layer EIL and the second electrode Cathode cover all the sub-pixel regions respectively, that is, the electron transport layer ETL, the electron injection layer EIL and the second electrode Cathode are all three. Full face setting.
  • the thickness of the first electrode Anode in order to match the luminous efficiency of each sub-pixel region, when applied to a 55ich 4K bottom-emission display device, the thickness of the first electrode Anode can be set to 70nm, in the first sub-pixel area and the second sub-pixel area, the target thickness of the hole injection layer HIL can be the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron injection layer.
  • the target thickness of the hole injection layer HIL can be the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, and the electron transport layer ETL and 12%-15% of the sum of the thickness of the electron injection layer EIL;
  • the target thickness of the hole transport layer HTL may be 6% of the sum of the thicknesses of the hole injection layer HIL, the hole transport layer HTL, the light emitting material layer EML, the electron transport layer ETL and the electron injection layer EIL -8%; in the second sub-pixel region, the target thickness of the hole transport layer HTL may be the sum of the thicknesses of the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron injection layer EIL 7%-10% of the sum; in the third sub-pixel region, the target thickness of the hole transport layer HTL can be the hole injection layer HIL, the hole transport layer HTL, the light-emitting material layer EML, the electron transport layer ETL and the electron injection layer 9%-11% of the sum of the thickness of the EIL;
  • the target thickness of the light-emitting material layer EML may be 38% of the sum of the thicknesses of the hole injection layer HIL, the hole transport layer HTL, the light-emitting material layer EML, the electron transport layer ETL and the electron injection layer EIL- 40%; in the second sub-pixel region, the target thickness of the luminescent material layer EML may be the sum of the thicknesses of the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron injection layer EIL 30%-32%; in the third sub-pixel region, the target thickness of the luminescent material layer EML can be the thickness of the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron injection layer EIL 25%-28% of the sum.
  • the first electrode Anode The thickness can be set to 15nm, and in the first sub-pixel region, the target thickness of the hole injection layer HIL can be the thickness of the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron injection layer EIL.
  • the target thickness of the hole injection layer HIL can be the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron 7%-13% of the sum of the thickness of the injection layer EIL; in the third sub-pixel region, the target thickness of the hole injection layer HIL can be the hole injection layer HIL, the hole transport layer HTL, the light-emitting material layer EML, the electron transport layer 8%-15% of the sum of the thicknesses of the layer ETL and the electron injection layer EIL;
  • the target thickness of the hole transport layer HTL may be 17% of the sum of the thicknesses of the hole injection layer HIL, the hole transport layer HTL, the light emitting material layer EML, the electron transport layer ETL and the electron injection layer EIL -22%; in the second sub-pixel region, the target thickness of the hole transport layer HTL can be the sum of the thicknesses of the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron injection layer EIL 18%-25% of the sum; in the third sub-pixel region, the target thickness of the hole transport layer HTL can be the hole injection layer HIL, the hole transport layer HTL, the light-emitting material layer EML, the electron transport layer ETL and the electron injection layer 15%-22% of the sum of the thickness of EIL;
  • the target thickness of the light-emitting material layer EML may be 63% of the sum of the thicknesses of the hole injection layer HIL, the hole transport layer HTL, the light-emitting material layer EML, the electron transport layer ETL and the electron injection layer EIL- 73%; in the second sub-pixel region, the target thickness of the luminescent material layer EML may be the sum of the thicknesses of the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron injection layer EIL 62%-75%; in the third sub-pixel region, the target thickness of the luminescent material layer EML can be the thickness of the hole injection layer HIL, the hole transport layer HTL, the luminescent material layer EML, the electron transport layer ETL and the electron injection layer EIL 63%-77% of the sum.
  • the first sub-pixel region of the present disclosure may be a red sub-pixel region R
  • the second sub-pixel region may be a green sub-pixel region G
  • the third sub-pixel region may be a blue sub-pixel region B.
  • the pixel defining layer PDL may include a first pixel partition wall PDL1 and a second pixel partition wall PDL2 .
  • the height of the partition wall PDL1 may be greater than the height of the second pixel partition wall PDL2, the adjacent first pixel partition wall PDL1 defines a plurality of sub-pixel regions P, and the adjacent second pixel partition wall PDL2 defines one sub-pixel region P;
  • a plurality of sub-pixel regions P defined by adjacent first pixel partition walls PDL1 are provided with the same light-emitting functional layer EL, and the height of the light-emitting functional layer EL is greater than the height of the second pixel partition wall PDL2;
  • the overall P' formed by the plurality of sub-pixel regions P defined by the adjacent first pixel partition walls PDL1 is elongated and distributed in a matrix
  • the short side of the whole body P' extends in the row direction, and the light-emitting functional layers EL material in all the whole body P' in the same column are the same, and are formed by one inkjet printing process.
  • the display substrate with the above structure can ensure that the thickness uniformity of the display film layer in the sub-pixel region is good.
  • the first pixel partition wall PDL1 may include a first film layer n and a second film layer located on the first film layer n m
  • the second pixel partition wall PDL2 may include the first film layer n
  • the setting can make the height difference between the first pixel partition wall PDL1 and the second pixel partition wall PDL2 equal to the thickness of the second film layer m.
  • the sub-pixel regions P of the same column have the same color, the sub-pixel regions P of the same color in the same column are connected through the first channel T1, and the sub-pixel regions P of the same color in different columns are connected through the second channel T2, and the sub-pixel regions P of the same color in different columns are connected through the second channel T2.
  • the sub-pixel regions P are not adjacent to each other.
  • the fluidity of the solution is increased, so that it is easier to form a film layer with a uniform thickness in the sub-pixel regions P.
  • the first channel T1 and the second channel T2 are to remove part or all of the pixel boundaries between the two sub-pixel regions P formed after layer PDL. That is, the widths of the first channel T1 and the second channel T2 may be smaller than or equal to the width of the sub-pixel region P.
  • an embodiment of the present disclosure further provides a display device including the above-mentioned display substrate provided by an embodiment of the present disclosure. Since the principle of solving the problem of the display device is similar to the principle of solving the problem of the above-mentioned display substrate, the implementation of the display device provided by the embodiment of the present disclosure may refer to the implementation of the above-mentioned display substrate provided by the embodiment of the present disclosure, and the repetition will not be repeated. Repeat.
  • the display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, a smart watch, a fitness wristband, a personal digital assistant, etc. .
  • the display device includes but is not limited to: a radio frequency unit, a network module, an audio output unit, an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, and a power supply and other components.
  • the structure of the above-mentioned display device does not constitute a limitation on the display device, and the display device may include more or less components described above, or combine some components, or arrange different components.
  • the above-mentioned display device provided by the embodiments of the present disclosure may be applicable to display technologies such as organic electroluminescence display (OLED) and quantum dot display (QLED) with driving circuits, which are not limited herein.
  • OLED organic electroluminescence display
  • QLED quantum dot display

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Abstract

本公开提供的显示基板的制作方法、显示基板及显示装置，可以兼顾不同颜色子像素区内发光功能层的膜厚均匀性，保证不同颜色子像素区的有效开口率，提高器件寿命。该制作方法包括：提供一个衬底基板，该衬底基板包括多个不同颜色的子像素区；在各子像素区打印发光功能层的溶液，其中，不同颜色子像素区内溶液的体积与溶液的饱和蒸汽压呈正相关关系；对溶液进行真空干燥，形成膜厚均匀的发光功能层。

Description

显示基板的制作方法、显示基板及显示装置
相关申请的交叉引用
本申请要求在2021年04月15日提交中国专利局、申请号为202110403595.5、申请名称为“显示基板的制作方法、显示基板及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示基板的制作方法、显示基板及显示装置。
背景技术
有机电致发光器件(OLED)作为一种新型的发光器件在显示和照明领域体现出了巨大的应用潜力，因而受到了学术界和产业界的强烈关注。在显示领域，有机电致发光器件相对于液晶显示器件(LCD)具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点，被认为是下一代显示技术。
发明内容
本公开实施例提供的显示基板的制作方法、显示基板及显示装置，具体方案如下：
一方面，本公开实施例提供了一种显示基板的制作方法，包括：
提供一个衬底基板，所述衬底基板包括多个不同颜色的子像素区；
在各所述子像素区打印发光功能层的溶液，其中，不同颜色所述子像素区内所述溶液的体积与所述溶液的饱和蒸汽压呈正相关关系；
对所述溶液进行真空干燥，形成膜厚均匀的所述发光功能层。
可选地，在本公开实施例提供的上述制作方法中，所述溶液包括互溶的 第一溶剂和第二溶剂，所述第一溶剂的饱和蒸气压小于所述第二溶剂的饱和蒸气压。
可选地，在本公开实施例提供的上述制作方法中，所述子像素区包括：多个红色子像素区、多个绿色子像素区和多个蓝色子像素区；
在所述多个子像素区打印发光功能层的溶液，具体包括：
在所述多个红色子像素区打印所述发光功能层的第一溶液，在所述多个绿色子像素区打印所述发光功能层的第二溶液，并在所述多个蓝色子像素区打印所述发光功能层的第三溶液；其中，所述第二溶液的体积大于或等于所述第三溶液的体积且小于或等于所述第一溶液的体积，所述第二溶液的饱和蒸气压大于或等于所述第三溶液的饱和蒸气压且小于或等于所述第一溶液的饱和蒸气压。
可选地，在本公开实施例提供的上述制作方法中，所述第一溶液的饱和蒸气压、所述第二溶液的饱和蒸气压、所述第三溶液的饱和蒸气压之比为(2.5-1):(2.5-1):1。
可选地，在本公开实施例提供的上述制作方法中，所述第一溶剂在所述第一溶液、所述第二溶液和所述第三溶液中的体积占比依次增大，所述第二溶剂在所述第一溶液、所述第二溶液和所述第三溶液中的体积占比依次减小。
可选地，在本公开实施例提供的上述制作方法中，在所述第一溶液中，所述第一溶剂的体积占比为5％-30％，所述第二溶剂的体积占比为70％-95％；
在所述第二溶液中，所述第一溶剂的体积占比为30％-60％，所述第二溶剂的体积占比为40％-70％；
在所述第三溶液中，所述第一溶剂的体积占比为60％-95％，所述第二溶剂的体积占比为5％-40％。
可选地，在本公开实施例提供的上述制作方法中，所述第一溶剂为异丙苯、异丙基甲苯、1,3,5-三甲苯、二甲基苯甲醚和对二乙苯的其中之一或任意组合，所述第二溶剂为氯苯、环己酮、邻二甲苯的其中之一或任意组合。
可选地，在本公开实施例提供的上述制作方法中，所述发光功能层为空 穴注入层或发光材料层，所述第二溶液的体积大于所述第三溶液的体积且小于所述第一溶液的体积；所述发光功能层为空穴传输层，所述第二溶液的体积大于或等于所述第三溶液的体积且小于或等于所述第一溶液的体积。
可选地，在本公开实施例提供的上述制作方法中，所述发光功能层为空穴注入层或空穴传输层，所述第一溶液的浓度、所述第二溶液的浓度、以及所述第三溶液的浓度相同；所述发光功能层为发光材料层，所述第一溶液的浓度大于或等于所述第三溶液的浓度且小于或等于所述第二溶液的浓度。
可选地，在本公开实施例提供的上述制作方法中，在提供一个衬底基板之后，且在所述多个子像素区打印发光功能层的溶液之前，还包括：
在所述衬底基板上形成像素界定层，所述像素界定层在所述红色子像素区具有第一像素开口、在所述绿色子像素区具有第二像素开口、且在所述蓝色子像素区具有第三像素开口；
所述第三像素开口的面积小于所述第二像素开口的面积且大于所述第一像素开口的面积。
可选地，在本公开实施例提供的上述制作方法中，所述多个绿色子像素区包括：多个第一类绿色子像素区和多个第二类绿色子像素区；
所述第一类绿色子像素区对应所述第二像素开口的面积大于所述第二类绿色子像素区对应所述第二像素开口的面积；
所述第一类绿色子像素区对应所述第二溶液的饱和蒸气压小于所述第二类绿色子像素区对应所述第二溶液的饱和蒸气压。
可选地，在本公开实施例提供的上述制作方法中，所述第一溶液的饱和蒸气压、所述第一类绿色子像素区对应所述第二溶液的饱和蒸气压、所述第二类绿色子像素区对应所述第二溶液的饱和蒸气压、所述第三溶液的饱和蒸气压之比为1.746:1.404:1.378:1。
可选地，在本公开实施例提供的上述制作方法中，在提供一个衬底基板之后，且在所述衬底基板上形成像素界定层之前，还包括：
在所述多个子像素区形成多个第一电极。
可选地，在本公开实施例提供的上述制作方法中，在对所述溶液进行真空干燥，形成膜厚均匀的所述发光功能层之后，还包括：
在所述发光功能层上依次形成电子传输层、电子注入层和第二电极。
另一方面，本公开实施例提供了一种显示基板，包括：
衬底基板，所述衬底基板具有多个不同发光颜色的子像素区；
像素界定层，位于所述衬底基板之上，所述像素界定层在各所述子像素区具有像素开口；
发光功能层，位于所述像素界定层背离所述衬底基板的一侧，所述发光功能层至少部分位于所述像素开口内，所述发光功能层包括远离所述像素界定层的中心区、与所述像素界定层接触的攀爬区、以及位于所述中心区与所述攀爬区之间的过渡区；
在垂直于所述衬底基板的方向上，所述发光功能层在所述中心区的厚度与所述发光功能层的目标厚度之差小于或等于5nm、在所述过渡区的厚度与所述发光功能层的目标厚度之差大于5nm且小于或等于20nm、在所述攀爬区的厚度与所述发光功能层的目标厚度之差大于20nm。
可选地，在本公开实施例提供的上述显示基板中，从所述发光功能层的中心向外辐射与所述像素开口形状轮廓大致相同的整个投影面积的70％-90％为所述中心区，覆盖所述像素界定层与所述像素开口形状轮廓大致相同的整个投影面积的0-5％为所述攀爬区，在所述攀爬区与所述中心区之间与所述像素开口形状轮廓大致相同的整个投影面积的5％-30％为所述过渡区。
可选地，在本公开实施例提供的上述显示基板中，所述像素开口内的所述发光功能层的厚度均匀性与所述像素开口的面积呈正相关关系。
可选地，在本公开实施例提供的上述显示基板中，所述子像素区包括第一子像素区、第二子像素区和第三子像素区，所述像素开口包括位于所述第一子像素区的第一像素开口、位于所述第二子像素区的第二像素开口和位于所述第三子像素区的第三像素开口，所述第三像素开口的面积大于所述第一像素开口的面积且小于所述第二像素开口的面积；
所述发光功能层包括空穴注入层、空穴传输层和发光材料层；所述空穴注入层在所述第一像素开口内、所述第三像素开口内、所述第二像素开口内的厚度均匀性依次增大，所述空穴传输层在所述第一像素开口内、所述第三像素开口内、所述第二像素开口内的厚度均匀性依次增大，所述发光材料层在所述第一像素开口内、所述第三像素开口内、所述第二像素开口内的厚度均匀性依次增大。
可选地，在本公开实施例提供的上述显示基板中，所述子像素区包括第一子像素区、第二子像素区和第三子像素区，所述发光功能层包括空穴注入层、空穴传输层和发光材料层；
所述空穴注入层在所述第一子像素区的平均厚度为40nm-50nm、在所述第二子像素区的平均厚度为40nm-50nm、在所述第三子像素区的平均厚度为30nm-40nm；
所述空穴传输层在所述第一子像素区的平均厚度为20nm-28nm、在所述第二子像素区的平均厚度为20nm-27nm、在所述第三子像素区的平均厚度为20nm-27nm；
所述发光材料层在所述第一子像素区的平均厚度为120nm-135nm、在所述第二子像素区的平均厚度为80nm-95nm、在所述第三子像素区的平均厚度为60nm-72nm。
可选地，在本公开实施例提供的上述显示基板中，所述第一子像素区的发光效率为11.5Cd/A-15.6Cd/A，所述第二子像素区的发光效率为35.1Cd/A-41.2Cd/A，所述第三子像素区的发光效率为33Cd/A-46Cd/A。
可选地，在本公开实施例提供的上述显示基板中，所述子像素区包括第一子像素区、第二子像素区和第三子像素区，所述发光功能层包括空穴注入层、空穴传输层和发光材料层；
所述空穴注入层在所述第一子像素区的平均厚度为12nm-20nm、在所述第二子像素区的平均厚度为6nm-12nm、在所述第三子像素区的平均厚度为6nm-12nm；
所述空穴传输层在所述第一子像素区的平均厚度为21nm-30nm、在所述第二子像素区的平均厚度为16nm-26nm、在所述第三子像素区的平均厚度为11nm-20nm；
所述发光材料层在所述第一子像素区的平均厚度为87nm-105nm、在所述第二子像素区的平均厚度为63nm-78nm、在所述第三子像素区的平均厚度为55nm-70nm。
可选地，在本公开实施例提供的上述显示基板中，所述第一子像素区的发光效率为16.8Cd/A-20.3Cd/A，所述第二子像素区的发光效率为36.5Cd/A-49.5Cd/A，所述第三子像素区的发光效率为32.4Cd/A-47.2Cd/A。
可选地，在本公开实施例提供的上述显示基板中，还包括：在所述发光材料层背离所述衬底基板一侧依次设置的电子传输层、电子注入层和第二电极；其中，所述电子传输层、所述电子注入层和所述第二电极分别覆盖全部所述子像素区。
可选地，在本公开实施例提供的上述显示基板中，在所述第一子像素区和所述第二子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的15％-17％；在所述第三子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的12％-15％；
在所述第一子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的6％-8％；在所述第二子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的7％-10％；在所述第三子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的9％-11％；
在所述第一子像素区，所述发光材料层的目标厚度是所述空穴注入层、 所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的38％-40％；在所述第二子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的30％-32％；在所述第三子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的25％-28％。
可选地，在本公开实施例提供的上述显示基板中，在所述第一子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的10％-14％；在所述第二子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的7％-13％；在所述第三子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的8％-15％；
在所述第一子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的17％-22％；在所述第二子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的18％-25％；在所述第三子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的15％-22％；
在所述第一子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的63％-73％；在所述第二子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的62％-75％；在所述第三子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电 子传输层和所述电子注入层的厚度之和的63％-77％。
可选地，在本公开实施例提供的上述显示基板中，所述像素界定层包括第一像素隔墙和第二像素隔墙，所述第一像素隔墙的高度大于所述第二像素隔墙的高度，相邻所述第一像素隔墙限定多个所述子像素区，相邻所述第二像素隔墙限定一个所述子像素区；
相邻所述第一像素隔墙限定的多个所述子像素区内设置有相同的所述发光功能层，且所述发光功能层的高度大于所述第二像素隔墙的高度；
相邻所述第一像素隔墙限定的多个所述子像素区构成的整体为长条状，并呈矩阵分布；
所述整体的短边沿行方向延伸，同列的全部所述整体内的所述发光功能层材料相同，并通过一次喷墨打印过程形成。
可选地，在本公开实施例提供的上述显示基板中，所述第一像素隔墙包括第一膜层和位于所述第一膜层上的第二膜层，所述第二像素隔墙包括所述第一膜层。
可选地，在本公开实施例提供的上述显示基板中，同种颜色的至少两个所述子像素区连通；
同列所述子像素区的颜色相同，同列相同颜色的所述子像素区通过第一通道连通，且不同列的同种颜色的所述子像素区通过第二通道连通，不同列的同种颜色的所述子像素区互不相邻。
可选地，在本公开实施例提供的上述显示基板中，所述第一通道和所述第二通道是去除两个所述子像素区之间部分或全部所述像素界定层后形成的。
另一方面，本公开实施例提供了一种显示装置，包括上述显示基板。
附图说明
图1为本公开实施例提供的显示基板的制作方法的流程图；
图2为本公开实施例提供的打印过程中显示基板的结构示意图；
图3为本公开实施例提供的溶液体系的一种示意图；
图4为本公开实施例提供的溶液体系的又一种示意图；
图5为本公开实施例提供的溶液体系的又一种示意图；
图6为本公开实施例提供的显示基板的一种结构示意图；
图7为本公开实施例提供的显示基板的又一种结构示意图；
图8为本公开实施例提供的显示基板的又一种结构示意图；
图9为本公开实施例提供的显示基板的又一种结构示意图；
图10为图9中A-A的剖面结构示意图；
图11为图9中B-B的剖面结构示意图；
图12为本公开实施例提供的显示基板的又一种结构示意图；
图13为本公开实施例提供的显示基板的又一种结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。需要注意的是，附图中各图形的尺寸和形状不反映真实比例，目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“内”、“外”、“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可 能相应地改变。
一般地，在进行OLED的喷墨打印工艺之前，需要预先制作像素界定层(PDL)，以限定墨滴精确的流入指定的RGB子像素区，墨滴需要在RGB亚像素内充分铺展，且又不溢出。
相关技术中OLED的喷墨打印工艺正在积极的开发，其中有机湿膜的真空干燥是决定膜厚均匀性的关键工艺，特别是打完墨滴后整个溶剂氛围一致对膜厚均匀性有很大必要。通常不同颜色子像素区的功能层溶剂体系及比例相同，所形成溶液的饱和蒸气压相同。然而，由于RGB的每个子像素区的开口率不同及膜厚要求不同，导致RGB子像素区打印的墨滴体积很难相同，且由于微腔相应，目前的各功能膜层的基本厚度均为R＞G＞B，受设备限制，溶液的浓度有限，从而导致在减压干燥(VCD)过程中溶剂挥发速率不同，而形成痕迹(Mura)。如果要保证每个子像素区的墨滴体积相同需要更换每层墨滴的浓度，但墨滴浓度不同导致黏度不同及干燥速率也不同，易造成打印机塞孔问题，工艺难度系数大，也易产生Mura。因此，相关技术中，在对RGB子像素区的墨滴进行冷却干燥的过程中，较难兼容RGB三种子像素区内的膜厚均匀性。
为了至少解决相关技术中存在的上述技术问题，本公开实施例提供了一种显示基板的制作方法，如图1所示，包括以下步骤：
S101、提供一个衬底基板，该衬底基板包括多个不同颜色的子像素区；
S102、在各子像素区打印发光功能层的溶液，其中，不同颜色子像素区内溶液的体积与溶液的饱和蒸汽压呈正相关关系；
S103、对溶液进行真空干燥，形成膜厚均匀的发光功能层。
在本公开实施例提供的上述制作方法中，不同颜色子像素区内溶液的体积与溶液的饱和蒸汽压呈正相关关系，可以使得不同颜色子像素区中不同体积的溶液干燥速率基本相同，以致不同颜色子像素区中的溶剂完全挥发所用时间基本相同，也就是说，在VCD工艺过程中，不同颜色子像素区所处的溶剂氛围相同，不同颜色子像素区内的膜层干燥环境相同，从而降低了VCD工 艺的难度，兼容了不同颜色子像素区的膜厚均匀性。
可选地，在本公开实施例提供的上述制作方法中，为了便于调控溶液的饱和蒸气压，溶液可以包括互溶的第一溶剂和第二溶剂，第一溶剂的饱和蒸气压小于第二溶剂的饱和蒸气压。在一些实施例中，溶液可以仅包括互溶的第一溶剂和第二溶剂，此时溶液的饱和蒸气压等于第一溶剂的饱和蒸气压与第一溶剂在溶液中的体积占比的乘积、以及第二溶剂的饱和蒸气压与第二溶剂在溶液中的体积占比的乘积的加和。
在一些实施例中，在本公开实施例提供的上述制作方法中，如图2所示，子像素区可以包括：多个红色子像素区R、多个绿色子像素区G和多个蓝色子像素区B；
步骤S102在多个子像素区打印发光功能层的溶液，具体可以通过以下方式进行实现：
在多个红色子像素区R打印发光功能层的第一溶液(如图3所示)，在多个绿色子像素区G打印发光功能层的第二溶液(如图4所示)，并在多个蓝色子像素区B打印发光功能层的第三溶液(如图5所示)；其中，第二溶液的体积大于或等于第三溶液的体积且小于或等于第一溶液的体积，第二溶液的饱和蒸气压大于或等于第三溶液的饱和蒸气压且小于或等于第一溶液的饱和蒸气压。上述条件可以使得发光功能层在红色子像素区R、绿色子像素区G和蓝色子像素区B内的膜厚依次递减，从而满足在红色子像素区R、绿色子像素区G和蓝色子像素区B内所形成的发光功能层的膜厚与相关技术中的膜厚趋势相同；并且，上述条件还可以使得第一溶液、第二溶液和第三溶液几乎同时挥发掉，从而兼顾红色子像素区R、绿色子像素区G和蓝色子像素区B内发光功能层的膜厚均匀性，保证红色子像素区R、绿色子像素区G和蓝色子像素区B的有效开口率，提高器件寿命。
在一些实施例中，在本公开实施例提供的上述制作方法中，第一溶液的饱和蒸气压、第二溶液的饱和蒸气压、第三溶液的饱和蒸气压之比可以为(2.5-1):(2.5-1):1。示例性地，可以使第一溶剂在第一溶液、第二溶液和第三溶 液中的体积占比依次增大，第二溶剂在第一溶液、第二溶液和第三溶液中的体积占比依次减小，以确保第一溶液、第二溶液和第三溶液的饱和蒸汽压依次降低。如此则可保证在同时进行VCD冷却干燥过程中，第一溶液、第二溶液和第三溶液的完全挥发时间大致相同，降低VCD的工艺难度，提高膜厚均匀性。
在一些实施例中，在本公开实施例提供的上述制作方法中，为确保第一溶液、第二溶液和第三溶液的饱和蒸汽压依次降低，如图3至图5所示，可以通过以下方式实现：在第一溶液中，第一溶剂a的体积占比为5％-30％，第二溶剂b的体积占比为70％-95％；在第二溶液中，第一溶剂a的体积占比为30％-60％，第二溶剂b的体积占比为40％-70％；在第三溶液中，第一溶剂a的体积占比为60％-95％，第二溶剂b体积占比为5％-40％。
在一些实施例中，在本公开实施例提供的上述制作方法中，第一溶剂a可以为异丙苯、异丙基甲苯、1,3,5-三甲苯、二甲基苯甲醚和对二乙苯的其中之一或任意组合，第二溶剂b可以为氯苯、环己酮、邻二甲苯的其中之一或任意组合。当然，在具体实施时，第一溶剂a与第二溶剂b还可以选用本领域技术人员公知的其他互溶且对发光功能层的材料具有良好溶解性的溶剂，在此不做具体限定。
在一些实施例中，在本公开实施例提供的上述制作方法中，为兼顾各子像素区内的膜厚均匀性，如图2所示，发光功能层可以为空穴注入层HIL或发光材料层EML，第二溶液的体积可以大于第三溶液的体积且可以小于第一溶液的体积；在另一些实施例中，发光功能层还可以为空穴传输层HTL，第二溶液的体积可以大于或等于第三溶液的体积且可以小于或等于第一溶液的体积。
在一些实施例中，在本公开实施例提供的上述制作方法中，为匹配各子像素区内的发光效率，发光功能层为空穴注入层HIL或空穴传输层HTL时，第一溶液的浓度、第二溶液的浓度、以及第三溶液的浓度可以相同；发光功能层为发光材料层EML时，第一溶液的浓度可以大于或等于第三溶液的浓度 且可以小于或等于第二溶液的浓度。
在一些实施例中，在本公开实施例提供的上述制作方法中，在执行步骤S101提供一个衬底基板之后，且在执行步骤S102在各子像素区打印发光功能层的溶液之前，如图6所示，还可以执行以下步骤：
在衬底基板PI上形成像素界定层PDL，该像素界定层PDL在红色子像素区R具有第一像素开口K1、在绿色子像素区G具有第二像素开口K2、且在蓝色子像素区B具有第三像素开口K3；第三像素开口K3的面积可以小于第二像素开口K2的面积且可以大于第一像素开口K1的面积。开口大小不同的像素界定层PDL，可以限定溶液精确地流入RGB子像素区。
在一些实施例中，在本公开实施例提供的上述制作方法中，多个绿色子像素区G包括：多个第一类绿色子像素区G1和多个第二类绿色子像素区G2；第一类绿色子像素区G1对应第二像素开口K2的面积大于第二类绿色子像素区G2对应第二像素开口K2的面积；第一类绿色子像素区G1对应第二溶液的饱和蒸气压小于第二类绿色子像素区G2对应第二溶液的饱和蒸气压。这样可以使得第一类绿色子像素区G1的第二溶液与第二类绿色子像素区G2的第二溶液几乎同时挥发掉，从而保证了第一类绿色子像素区G1与第二类绿色子像素区G2的膜厚均匀性。
在一些实施例中，为了减小各子像素区的膜厚均匀性差异，第一溶液的饱和蒸气压、第一类绿色子像素区对应第二溶液的饱和蒸气压、第二类绿色子像素区对应第二溶液的饱和蒸气压、第三溶液的饱和蒸气压之比可以为1.746:1.404:1.378:1。
在一些实施例中，在本公开实施例提供的上述制作方法中，在执行步骤S101提供一个衬底基板之后，且在执行上述步骤在衬底基板PI上形成像素界定层PDL之前，如图6所示，还可以执行以下步骤：
在多个子像素区形成多个第一电极Anode。
在一些实施例中，在本公开实施例提供的上述制作方法中，在执行步骤S103对溶液进行真空干燥，形成膜厚均匀的发光功能层之后，还可以执行以 下步骤：
在发光功能层(具体可以为发光材料层EML)上依次形成电子传输层ETL、电子注入层EIL和第二电极Cathode。
基于同一发明构思，本公开实施例还提供了一显示基板，由于该显示基板解决问题的原理与上述制作方法解决问题的原理相似，因此，本公开实施例提供的该显示基板的实施可以参见本公开实施例提供的上述制作方法的实施，重复之处不再赘述。
在一些实施例中，如图6至图9所示，本公开实施例提供的上述显示基板可以包括：
衬底基板PI，该衬底基板PI具有多个不同发光颜色的子像素区P；
像素界定层PDL，位于衬底基板PI之上，该像素界定层PDL在各子像素区具有像素开口K；
发光功能层EL，位于像素界定层PDL背离衬底基板PI的一侧，发光功能层EL至少部分位于像素开口K内，该发光功能层EL可以包括远离像素界定层PDL的中心区d、与像素界定层PDL接触的攀爬区f、以及位于中心区d与攀爬区f之间的过渡区e；
在垂直于衬底基板PI的方向上，发光功能层EL在中心区d的厚度h1与发光功能层EL的目标厚度之差可以小于或等于5nm、在过渡区e的厚度h2与发光功能层EL的目标厚度之差可以大于5nm且小于或等于20nm、在攀爬区f的厚度h3与发光功能层EL的目标厚度之差可以大于20nm。
需要说明的是，在本公开中，发光功能层EL的目标厚度具体指发光功能层EL的设计厚度，中心区d的厚度h1、过渡区e的厚度h2和攀爬区f的厚度h3均是指各区在产品中的实际厚度。
以55ich 4K底发射显示器件为例，其中该底发射显示器件在制作像素界定层PDL之前所形成的第一电极Anode的厚度为70nm。
具体地，在蓝色子像素区B内，空穴注入层HIL的目标厚度为30nm，中心区d的厚度为30nm-35nm，过渡区e的厚度为35-50nm，过渡区c的厚度大 于或等于50nm；空穴传输层HTL的目标厚度为20nm，中心区d的厚度为20nm-25nm，过渡区e的厚度为25nm-40nm，攀爬区f的厚度大于40nm；蓝色发光材料层B-EML的目标厚度为60nm，中心区d的厚度为60nm-65nm，过渡区e的厚度为65nm-80nm，攀爬区f的厚度大于80nm。
在绿色子像素区G内，空穴注入层HIL的目标厚度为40nm，中心区d的厚度为40nm-45nm，过渡区e的厚度为45-60nm，过渡区c的厚度大于或等于60nm；空穴传输层HTL的目标厚度为20nm，中心区d的厚度为20nm-25nm，过渡区e的厚度为25nm-40nm，攀爬区f的厚度大于或等于40nm；绿色发光材料层G-EML的目标厚度为80nm，中心区d的厚度80nm-85nm，过渡区e的厚度为85nm-100nm，攀爬区f的厚度大于或等于100nm。
在红色子像素区R内，空穴注入层HIL的目标厚度为40nm，中心区d的厚度为40nm-45nm，过渡区e的厚度为45-60nm，过渡区c的厚度大于或等于60nm；空穴传输层HTL的目标厚度为20nm，中心区d的厚度为20nm-25nm，过渡区e的厚度为25nm-40nm，攀爬区f的厚度大于或等于40nm；红色发光材料层R-EML的目标厚度为120nm，中心区d的厚度为120nm-125nm，过渡区e的厚度为125nm-140nm，攀爬区f的厚度大于或等于140nm。
以55ich 8K底发射显示器件为例，其中该底发射显示器件在制作像素界定层PDL之前所形成的第一电极Anode的厚度为15nm。
具体地，在蓝色子像素区B内，空穴注入层HIL的目标厚度为6nm，中心区d的厚度为6nm-11nm，过渡区e的厚度为11-26nm，过渡区c的厚度大于或等于26nm；空穴传输层HTL的目标厚度为11nm，中心区d的厚度为11nm-16nm，过渡区e的厚度为16nm-31nm，攀爬区f的厚度大于31nm；蓝色发光材料层B-EML的目标厚度为55nm，中心区d的厚度为55nm-60nm，过渡区e的厚度为60nm-75nm，攀爬区f的厚度大于75nm。
在绿色子像素区G内，空穴注入层HIL的目标厚度为6nm，中心区d的厚度为6nm-11nm，过渡区e的厚度为11-26nm，过渡区c的厚度大于或等于26nm；空穴传输层HTL的目标厚度为16nm，中心区d的厚度为16nm-21nm， 过渡区e的厚度为21nm-36nm，攀爬区f的厚度大于或等于36nm；绿色发光材料层G-EML的目标厚度为63nm，中心区d的厚度为63nm-68nm，过渡区e的厚度为68nm-83nm，攀爬区f的厚度大于或等于83nm。
在红色子像素区R内，空穴注入层HIL的目标厚度为12nm，中心区d的厚度为12nm-17nm，过渡区e的厚度为17-32nm，过渡区c的厚度大于或等于32nm；空穴传输层HTL的目标厚度为21nm，中心区d的厚度为21nm-26nm，过渡区e的厚度为26nm-41nm，攀爬区f的厚度大于或等于41nm；红色发光材料层R-EML的目标厚度为87nm，中心区d的厚度为87nm-92nm，过渡区e的厚度为92nm-107nm，攀爬区f的厚度大于或等于107nm。
在一些实施例中，在本公开实施例提供的上述显示基板中，从发光功能层EL的中心向外辐射与像素开口K形状轮廓大致相同的整个投影面积的70％-90％可以为中心区a，覆盖像素界定层PDL与像素开口K形状轮廓大致相同的整个投影面积的0-5％可以为攀爬区f，在攀爬区f与中心区a之间与像素开口K形状轮廓大致相同的整个投影面积的5％-30％可以为过渡区e。换言之，中心区d占发光功能层EL的面积比例可达70％-90％，攀爬区f仅占发光功能层EL的面积的0％-5％，中心区d与攀爬区f之间的过渡区e占发光功能层EL的面积比例为5％-30％。
在一些实施例中，在本公开实施例提供的上述显示基板中，像素开口K内的发光功能层EL的厚度均匀性可以与像素开口K的面积呈正相关关系。换言之，像素开口K的面积越大，发光功能层EL的厚度均匀性越好。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图6所示，子像素区可以包括第一子像素区、第二子像素区和第三子像素区，像素开口K包括位于第一子像素区的第一像素开口K1、位于第二子像素区的第二像素开口K2和位于第三子像素区的第三像素开口K3，第三像素开口K3的面积可以大于第一像素开口K1的面积且小于第二像素开口K2的面积；
发光功能层EL可以包括空穴注入层HIL、空穴传输层HTL和发光材料层EML；空穴注入层HIL在第一像素开口K1内、第三像素开口K3内、第 二像素开口K2内的厚度均匀性依次增大，空穴传输层HTL在第一像素开口K1内、第三像素开口K3内、第二像素开口K2内的厚度均匀性依次增大，发光材料层EML在第一像素开口K1内、第三像素开口K3内、第二像素开口K2内的厚度均匀性依次增大。
在一些实施例中，第一子像素区、第二子像素区和第三子像素区可以依次为红色子像素区R、绿色子像素区G和蓝色子像素区B。以55inch 4K底发射产品说明，其中绿色子像素区G的开口率(相当于像素开口的面积与子像素区的面积之比)＞蓝色子像素区B的开口率＞红色子像素区R的开口率，在一些实施例中，绿色子像素区G的开口率为23.6％、蓝色像素区B的开口率为20.5％、红色子像素区R的开口率为19.8％。在上述条件下，空穴注入层HIL、空穴传输层HTL和发光材料层EML的形貌趋势基本相同，其中空穴注入层HIL的形貌决定了空穴传输层HTL和发光材料层EML的形貌，以HIL的形貌说明，在像素开口K的长边g和短边h(如图8所示)方向上的攀爬趋势(即U型上升趋势)分别为绿色子像素区G＞蓝色子像素区B＞红色子像素区R。在一些实施例中，绿色子像素区G中HIL、HTL、EML的膜厚均匀性依次为76.2％、80％、86.2％，蓝色子像素区B中HIL、HTL、EML的膜厚均匀性依次为74.2％、78.6、82.2％，红色子像素区R中HIL、HTL、EML的膜厚均匀性依次为71.6％、74.1％、80.5％。
需要说明的是，在本公开中膜厚的均匀性等于膜层的中心区d的面积占发光功能层EL的面积的百分比。
在一些实施例中，本公开提供的显示基板可应用于55ich 4K的底发射型显示器件，其中第一电极Anode的厚度为70nm，空穴注入层HIL在第一子像素区的平均厚度为40nm-50nm、在第二子像素区的平均厚度为40nm-50nm、在第三子像素区的平均厚度为30nm-40nm；空穴传输层HTL在第一子像素区的平均厚度为20nm-28nm、在第二子像素区的平均厚度为20nm-27nm、在第三子像素区的平均厚度为20nm-27nm；发光材料层EML在第一子像素区的平均厚度为120nm-135nm、在第二子像素区的平均厚度为80nm-95nm、在第三 子像素区的平均厚度为60nm-72nm；第一子像素区的发光效率为11.5Cd/A-15.6Cd/A，第二子像素区的发光效率为35.1Cd/A-41.2Cd/A，第三子像素区的发光效率为33Cd/A-46Cd/A。
需要说明的是，在本公开中膜层的平均厚度等于子像素区内中心区d、过渡区e和攀爬区f三者的加权平均值。
在一些实施例中，显示基板可应用于55ich 8K底发射显示器件，第一电极Anode的厚度为15nm，空穴注入层HIL在第一子像素区的平均厚度可以为12nm-20nm、在第二子像素区的平均厚度可以为6nm-12nm、在第三子像素区的平均厚度可以为6nm-12nm；空穴传输层在第一子像素区的平均厚度为21nm-30nm、在第二子像素区的平均厚度为16nm-26nm、在第三子像素区的平均厚度为11nm-20nm；发光材料层在第一子像素区的平均厚度为87nm-105nm、在第二子像素区的平均厚度为63nm-78nm、在第三子像素区的平均厚度为55nm-70nm；第一子像素区的发光效率为16.8Cd/A-20.3Cd/A，第二子像素区的发光效率为36.5Cd/A-49.5Cd/A，第三子像素区的发光效率为32.4Cd/A-47.2Cd/A。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图6所示，还可以包括：在发光材料层EML背离衬底基板PI一侧依次设置的电子传输层ETL、电子注入层EIL和第二电极Cathode；其中，电子传输层ETL、电子注入层EIL和第二电极Cathode分别覆盖全部子像素区，即电子传输层ETL、电子注入层EIL和第二电极Cathode三者均是整面设置。
在一些实施例中，在本公开实施例提供的上述显示基板中，为了匹配各子像素区的发光效率，在应用于55ich 4K的底发射型显示器件时，第一电极Anode的厚度可以设置为70nm，在第一子像素区和第二子像素区，空穴注入层HIL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的15％-17％；在第三子像素区，空穴注入层HIL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的12％-15％；
在第一子像素区，空穴传输层HTL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的6％-8％；在第二子像素区，空穴传输层HTL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的7％-10％；在第三子像素区，空穴传输层HTL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的9％-11％；
在第一子像素区，发光材料层EML的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的38％-40％；在第二子像素区，发光材料层EML的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的30％-32％；在第三子像素区，发光材料层EML的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的25％-28％。
在一些实施例中，在本公开实施例提供的上述显示基板中，为了匹配各子像素区的发光效率，在将该显示基板应用于55ich 8K的顶发射型显示器件时，第一电极Anode的厚度可以设置为15nm，在第一子像素区，空穴注入层HIL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的10％-14％；在第二子像素区，空穴注入层HIL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的7％-13％；在第三子像素区，空穴注入层HIL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的8％-15％；
在第一子像素区，空穴传输层HTL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的17％-22％；在第二子像素区，空穴传输层HTL的目标厚度可以是 空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的18％-25％；在第三子像素区，空穴传输层HTL的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的15％-22％；
在第一子像素区，发光材料层EML的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的63％-73％；在第二子像素区，发光材料层EML的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的62％-75％；在第三子像素区，发光材料层EML的目标厚度可以是空穴注入层HIL、空穴传输层HTL、发光材料层EML、电子传输层ETL和电子注入层EIL的厚度之和的63％-77％。
在一些实施例中，本公开的第一子像素区可以为红色子像素区R，第二子像素区可以为绿色子像素区G，第三子像素区可以为蓝色子像素区B。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图9和图10所示，像素界定层PDL可以包括第一像素隔墙PDL1和第二像素隔墙PDL2，第一像素隔墙PDL1的高度可以大于第二像素隔墙PDL2的高度，相邻第一像素隔墙PDL1限定多个子像素区P，相邻第二像素隔墙PDL2限定一个子像素区P；
相邻第一像素隔墙PDL1限定的多个子像素区P内设置有相同的发光功能层EL，且发光功能层EL的高度大于第二像素隔墙PDL2的高度；
相邻第一像素隔墙PDL1限定的多个子像素区P构成的整体P’为长条状，并呈矩阵分布；
整体P’的短边沿行方向延伸，同列的全部整体P’内的发光功能层EL材料相同，并通过一次喷墨打印过程形成。
具备上述结构的显示基板，能够保证子像素区内的显示膜层膜厚均一性较好。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图11所示， 第一像素隔墙PDL1可以包括第一膜层n和位于第一膜层n上的第二膜层m，第二像素隔墙PDL2可以包括第一膜层n，这样设置，可以使得第一像素隔墙PDL1和第二像素隔墙PDL2的高度差为第二膜层m的厚度。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图12和图13所示，同种颜色的至少两个子像素区P可以连通；
同列子像素区P的颜色相同，同列相同颜色的子像素区P通过第一通道T1连通，且不同列的同种颜色的子像素区P通过第二通道T2连通，不同列的同种颜色的子像素区P互不相邻。
通过设置至少两个子像素区P连通，增加了溶液的流动性，因此在子像素区P内更易形成厚度均匀的膜层。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图12和图13所示，第一通道T1和第二通道T2是去除两个子像素区P之间部分或全部像素界定层PDL后形成的。即第一通道T1和第二通道T2的宽度可以小于或等于子像素区P的宽度。
基于同一发明构思，本公开实施例还提供了一种显示装置，包括本公开实施例提供的上述显示基板。由于该显示装置解决问题的原理与上述显示基板解决问题的原理相似，因此，本公开实施例提供的该显示装置的实施可以参见本公开实施例提供的上述显示基板的实施，重复之处不再赘述。
在一些实施例中，该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、智能手表、健身腕带、个人数字助理等任何具有显示功能的产品或部件。该显示装置包括但不限于：射频单元、网络模块、音频输出单元、输入单元、传感器、显示单元、用户输入单元、接口单元、存储器、处理器、以及电源等部件。本领域技术人员可以理解，上述显示装置的结构并不构成对显示装置的限定，显示装置可以包括上述更多或更少的部件，或者组合某些部件，或者不同的部件布置。另外，本公开实施例提供的上述显示装置可以适用于有机电致发光显示(OLED)、也适用于量子点显示(QLED)等具有驱动电路的显示技术中，在此不做限定。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样，倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (30)

  1. 一种显示基板的制作方法，其中，包括：
    提供一个衬底基板，所述衬底基板包括多个不同颜色的子像素区；
    在各所述子像素区打印发光功能层的溶液，其中，不同颜色所述子像素区内所述溶液的体积与所述溶液的饱和蒸汽压呈正相关关系；
    对所述溶液进行真空干燥，形成膜厚均匀的所述发光功能层。
  2. 如权利要求1所述的制作方法，其中，所述溶液包括互溶的第一溶剂和第二溶剂，所述第一溶剂的饱和蒸气压小于所述第二溶剂的饱和蒸气压。
  3. 如权利要求2所述的制作方法，其中，所述子像素区包括：多个红色子像素区、多个绿色子像素区和多个蓝色子像素区；
    在所述多个子像素区打印发光功能层的溶液，具体包括：
    在所述多个红色子像素区打印所述发光功能层的第一溶液，在所述多个绿色子像素区打印所述发光功能层的第二溶液，并在所述多个蓝色子像素区打印所述发光功能层的第三溶液；其中，所述第二溶液的体积大于或等于所述第三溶液的体积且小于或等于所述第一溶液的体积，所述第二溶液的饱和蒸气压大于或等于所述第三溶液的饱和蒸气压且小于或等于所述第一溶液的饱和蒸气压。
  4. 如权利要求3所述的制作方法，其中，所述第一溶液的饱和蒸气压、所述第二溶液的饱和蒸气压、所述第三溶液的饱和蒸气压之比为(2.5-1):(2.5-1):1。
  5. 如权利要求3或4所述的制作方法，其中，所述第一溶剂在所述第一溶液、所述第二溶液和所述第三溶液中的体积占比依次增大，所述第二溶剂在所述第一溶液、所述第二溶液和所述第三溶液中的体积占比依次减小。
  6. 如权利要求5所述的制作方法，其中，在所述第一溶液中，所述第一溶剂的体积占比为5％-30％，所述第二溶剂的体积占比为70％-95％；
    在所述第二溶液中，所述第一溶剂的体积占比为30％-60％，所述第二溶 剂的体积占比为40％-70％；
    在所述第三溶液中，所述第一溶剂的体积占比为60％-95％，所述第二溶剂的体积占比为5％-40％。
  7. 如权利要求6所述的制作方法，其中，所述第一溶剂为异丙苯、异丙基甲苯、1,3,5-三甲苯、二甲基苯甲醚和对二乙苯的其中之一或任意组合，所述第二溶剂为氯苯、环己酮、邻二甲苯的其中之一或任意组合。
  8. 如权利要求5所述的制作方法，其中，所述发光功能层为空穴注入层或发光材料层，所述第二溶液的体积大于所述第三溶液的体积且小于所述第一溶液的体积；所述发光功能层为空穴传输层，所述第二溶液的体积大于或等于所述第三溶液的体积且小于或等于所述第一溶液的体积。
  9. 如权利要求8所述的制作方法，其中，所述发光功能层为所述空穴注入层或所述空穴传输层，所述第一溶液的浓度、所述第二溶液的浓度、以及所述第三溶液的浓度相同；所述发光功能层为所述发光材料层，所述第一溶液的浓度大于或等于所述第三溶液的浓度且小于或等于所述第二溶液的浓度。
  10. 如权利要求3或4所述的制作方法，其中，在提供一个衬底基板之后，且在所述多个子像素区同时打印发光功能层的溶液之前，还包括：
    在所述衬底基板上形成像素界定层，所述像素界定层在所述红色子像素区具有第一像素开口、在所述绿色子像素区具有第二像素开口、且在所述蓝色子像素区具有第三像素开口；
    所述第三像素开口的面积小于所述第二像素开口的面积且大于所述第一像素开口的面积。
  11. 如权利要求10所述的制作方法，其中，所述多个绿色子像素区包括：多个第一类绿色子像素区和多个第二类绿色子像素区；
    所述第一类绿色子像素区对应所述第二像素开口的面积大于所述第二类绿色子像素区对应所述第二像素开口的面积；
    所述第一类绿色子像素区对应所述第二溶液的饱和蒸气压小于所述第二类绿色子像素区对应所述第二溶液的饱和蒸气压。
  12. 如权利要求11所述的制作方法，其中，所述第一溶液的饱和蒸气压、所述第一类绿色子像素区对应所述第二溶液的饱和蒸气压、所述第二类绿色子像素区对应所述第二溶液的饱和蒸气压、所述第三溶液的饱和蒸气压之比为1.746:1.404:1.378:1。
  13. 如权利要求10所述的制作方法，其中，在提供一个衬底基板之后，且在所述衬底基板上形成像素界定层之前，还包括：
    在所述多个子像素区形成多个第一电极。
  14. 如权利要求1所述的制作方法，其中，在对所述溶液进行真空干燥，形成膜厚均匀的所述发光功能层之后，还包括：
    在所述发光功能层上依次形成电子传输层、电子注入层和第二电极。
  15. 一种显示基板，其中，包括：
    衬底基板，所述衬底基板具有多个不同发光颜色的子像素区；
    像素界定层，位于所述衬底基板之上，所述像素界定层在各所述子像素区具有像素开口；
    发光功能层，位于所述像素界定层背离所述衬底基板的一侧，所述发光功能层至少部分位于所述像素开口内，所述发光功能层包括远离所述像素界定层的中心区、与所述像素界定层接触的攀爬区、以及位于所述中心区与所述攀爬区之间的过渡区；
    在垂直于所述衬底基板的方向上，所述发光功能层在所述中心区的厚度与所述发光功能层的目标厚度之差小于或等于5nm、在所述过渡区的厚度与所述发光功能层的目标厚度之差大于5nm且小于或等于20nm、在所述攀爬区的厚度与所述发光功能层的目标厚度之差大于20nm。
  16. 如权利要求15所述的显示基板，其中，从所述发光功能层的中心向外辐射与所述像素开口形状轮廓大致相同的整个投影面积的70％-90％为所述中心区，覆盖所述像素界定层与所述像素开口形状轮廓大致相同的整个投影面积的0-5％为所述攀爬区，在所述攀爬区与所述中心区之间与所述像素开口形状轮廓大致相同的整个投影面积的5％-30％为所述过渡区。
  17. 如权利要求15所述的显示基板，其中，所述像素开口内的所述发光功能层的厚度均匀性与所述像素开口的面积呈正相关关系。
  18. 如权利要求17所述的显示基板，其中，所述子像素区包括第一子像素区、第二子像素区和第三子像素区，所述像素开口包括位于所述第一子像素区的第一像素开口、位于所述第二子像素区的第二像素开口和位于所述第三子像素区的第三像素开口，所述第三像素开口的面积大于所述第一像素开口的面积且小于所述第二像素开口的面积；
    所述发光功能层包括空穴注入层、空穴传输层和发光材料层；所述空穴注入层在所述第一像素开口内、所述第三像素开口内、所述第二像素开口内的厚度均匀性依次增大，所述空穴传输层在所述第一像素开口内、所述第三像素开口内、所述第二像素开口内的厚度均匀性依次增大，所述发光材料层在所述第一像素开口内、所述第三像素开口内、所述第二像素开口内的厚度均匀性依次增大。
  19. 如权利要求15所述的显示基板，其中，所述子像素区包括第一子像素区、第二子像素区和第三子像素区，所述发光功能层包括空穴注入层、空穴传输层和发光材料层；
    所述空穴注入层在所述第一子像素区的平均厚度为40nm-50nm、在所述第二子像素区的平均厚度为40nm-50nm、在所述第三子像素区的平均厚度为30nm-40nm；
    所述空穴传输层在所述第一子像素区的平均厚度为20nm-28nm、在所述第二子像素区的平均厚度为20nm-27nm、在所述第三子像素区的平均厚度为20nm-27nm；
    所述发光材料层在所述第一子像素区的平均厚度为120nm-135nm、在所述第二子像素区的平均厚度为80nm-95nm、在所述第三子像素区的平均厚度为60nm-72nm。
  20. 如权利要求19所述的显示基板，其中，所述第一子像素区的发光效率为11.5Cd/A-15.6Cd/A，所述第二子像素区的发光效率为35.1Cd/A-41.2Cd/A， 所述第三子像素区的发光效率为33Cd/A-46Cd/A。
  21. 如权利要求15所述的显示基板，其中，所述子像素区包括第一子像素区、第二子像素区和第三子像素区，所述发光功能层包括空穴注入层、空穴传输层和发光材料层；
    所述空穴注入层在所述第一子像素区的平均厚度为12nm-20nm、在所述第二子像素区的平均厚度为6nm-12nm、在所述第三子像素区的平均厚度为6nm-12nm；
    所述空穴传输层在所述第一子像素区的平均厚度为21nm-30nm、在所述第二子像素区的平均厚度为16nm-26nm、在所述第三子像素区的平均厚度为11nm-20nm；
    所述发光材料层在所述第一子像素区的平均厚度为87nm-105nm、在所述第二子像素区的平均厚度为63nm-78nm、在所述第三子像素区的平均厚度为55nm-70nm。
  22. 如权利要求21所述的显示基板，其中，所述第一子像素区的发光效率为16.8Cd/A-20.3Cd/A，所述第二子像素区的发光效率为36.5Cd/A-49.5Cd/A，所述第三子像素区的发光效率为32.4Cd/A-47.2Cd/A。
  23. 如权利要求18-22任一项所述的显示基板，其中，还包括：在所述发光材料层背离所述衬底基板一侧依次设置的电子传输层、电子注入层和第二电极；其中，所述电子传输层、所述电子注入层和所述第二电极分别覆盖全部所述子像素区。
  24. 如权利要求23所述的显示基板，其中，在所述第一子像素区和所述第二子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的15％-17％；在所述第三子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的12％-15％；
    在所述第一子像素区，所述空穴传输层的目标厚度是所述空穴注入层、 所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的6％-8％；在所述第二子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的7％-10％；在所述第三子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的9％-11％；
    在所述第一子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的38％-40％；在所述第二子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的30％-32％；在所述第三子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的25％-28％。
  25. 如权利要求23所述的显示基板，其中，在所述第一子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的10％-14％；在所述第二子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的7％-13％；在所述第三子像素区，所述空穴注入层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的8％-15％；
    在所述第一子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的17％-22％；在所述第二子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的18％-25％；在所述第三子像素区，所述空穴传输层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电 子传输层和所述电子注入层的厚度之和的15％-22％；
    在所述第一子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的63％-73％；在所述第二子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的62％-75％；在所述第三子像素区，所述发光材料层的目标厚度是所述空穴注入层、所述空穴传输层、所述发光材料层、所述电子传输层和所述电子注入层的厚度之和的63％-77％。
  26. 如权利要求15所述的显示基板，其中，所述像素界定层包括第一像素隔墙和第二像素隔墙，所述第一像素隔墙的高度大于所述第二像素隔墙的高度，相邻所述第一像素隔墙限定多个所述子像素区，相邻所述第二像素隔墙限定一个所述子像素区；
    相邻所述第一像素隔墙限定的多个所述子像素区内设置有相同的所述发光功能层，且所述发光功能层的高度大于所述第二像素隔墙的高度；
    相邻所述第一像素隔墙限定的多个所述子像素区构成的整体为长条状，并呈矩阵分布；
    所述整体的短边沿行方向延伸，同列的全部所述整体内的所述发光功能层材料相同，并通过一次喷墨打印过程形成。
  27. 如权利要求26所述的显示基板，其中，所述第一像素隔墙包括第一膜层和位于所述第一膜层上的第二膜层，所述第二像素隔墙包括所述第一膜层。
  28. 如权利要求15所述的显示基板，其中，同种颜色的至少两个所述子像素区连通；
    同列所述子像素区的颜色相同，同列相同颜色的所述子像素区通过第一通道连通，且不同列的同种颜色的所述子像素区通过第二通道连通，不同列的同种颜色的所述子像素区互不相邻。
  29. 如权利要求28所述的显示基板，其中，所述第一通道和所述第二通 道是去除两个所述子像素区之间部分或全部所述像素界定层后形成的。
  30. 一种显示装置，其中，包括如权利要求15-29任一项所述的显示基板。
PCT/CN2021/125518 2021-04-15 2021-10-22 显示基板的制作方法、显示基板及显示装置 Ceased WO2022217879A1 (zh)

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