WO2023036011A1 - 一种晶圆抛光系统 - Google Patents

一种晶圆抛光系统 Download PDF

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Publication number
WO2023036011A1
WO2023036011A1 PCT/CN2022/115771 CN2022115771W WO2023036011A1 WO 2023036011 A1 WO2023036011 A1 WO 2023036011A1 CN 2022115771 W CN2022115771 W CN 2022115771W WO 2023036011 A1 WO2023036011 A1 WO 2023036011A1
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WIPO (PCT)
Prior art keywords
polishing
wafer
fixed working
working position
arm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/CN2022/115771
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English (en)
French (fr)
Inventor
徐枭宇
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Hangzhou Sizone Electronic Technology Inc
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Hangzhou Sizone Electronic Technology Inc
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Publication date
Application filed by Hangzhou Sizone Electronic Technology Inc filed Critical Hangzhou Sizone Electronic Technology Inc
Priority to EP22866477.7A priority Critical patent/EP4400258A4/en
Priority to KR1020247005184A priority patent/KR102837898B1/ko
Priority to US18/689,072 priority patent/US20240367283A1/en
Priority to JP2024510446A priority patent/JP7728045B2/ja
Publication of WO2023036011A1 publication Critical patent/WO2023036011A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/16—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces performing a reciprocating movement, e.g. during which the sense of rotation of the working-spindle is reversed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • the invention belongs to the technical field of semiconductor integrated circuit chip manufacturing, and in particular relates to a wafer polishing system.
  • CMP Chemical Mechanical Planarization
  • chemical mechanical polishing technology has developed into a chemical mechanical polishing technology that integrates on-line measurement, on-line endpoint detection, cleaning and other technologies.
  • it is also a necessary process technology for wafers to transition from 200mm to 300mm or even larger diameters, increase productivity, reduce manufacturing costs, and globally planarize substrates.
  • a chemical mechanical polishing planarization device generally includes a semiconductor device front-end module, a cleaning unit, and a polishing unit.
  • the front-end module of the semiconductor equipment mainly includes the cassette for storing wafers, the transfer robot and the air purification system, etc.
  • the cleaning unit mainly includes a number of megasonic cleaning parts, roller brush cleaning parts, drying parts and wafer transfer between the parts.
  • Devices, etc. the polishing unit usually includes a workbench, a polishing disc, a polishing head, a polishing arm, a dresser, a polishing liquid arm and other components, and each component is arranged on the workbench according to the processing position.
  • the present invention provides a wafer polishing system, each polishing module contained in it is controlled independently, the control flexibility is high, the polishing modules share a fixed working position, the equipment space is compact, and the wafer is movable The design of the track makes its transmission efficiency high, thereby improving the polishing efficiency.
  • a wafer polishing system comprising at least one polishing unit
  • the polishing unit includes a fixed working position and two polishing modules, and the polishing modules are located on both sides of the fixed working position;
  • the polishing module includes a polishing platform and a polishing arm, and the polishing arm can drive the wafer to move relative to the polishing platform to realize the polishing process;
  • the polishing arms of the polishing modules on both sides are located in the diagonal direction of the fixed working position, and the polishing arms can respectively swing between the fixed working position and the polishing platform to realize the transfer of the wafer, and the active areas of the polishing arms have overlapping parts.
  • the polishing arm of one polishing module acquires the wafer from the fixed working position, the polishing process is completed, and the wafer is put back to the fixed working position along the first track; the polishing arm of the other polishing module starts from After the wafer is obtained on the fixed working position, the polishing process is completed, and the wafer is returned to the fixed working position along the second track; the direction of the first track and the second track is approximately S-shaped.
  • the overlapping portion of the active area is in the shape of an eye, and the central axis of the fixed working position passes through the center of the overlapping portion.
  • the active trajectory passing through the center of the wafer has one and only one tangent point.
  • the swing angle of the polishing arm is less than 180°.
  • the fixed work station has a lifting structure, and when the fixed work station does not interact with the polishing arm to load and unload wafers, it is located below the plane where the polishing platform is located.
  • the number of the polishing modules is two. After the first polishing arm obtains the wafer from the fixed work position, it polishes on the first polishing platform. After completing the polishing process of the polishing module, the first polishing arm Put the wafer back to the fixed working position and transfer it from the fixed working position. The second polishing arm takes the wafer from the fixed working position and polishes it on the second polishing platform; at the same time, another wafer is placed in the fixed working position.
  • the first polishing arm puts the polished wafer back to the fixed working position, it continues to rotate to the cleaning position for cleaning; the second polishing arm puts the polished wafer back to the fixed working position After the position, continue to turn to the cleaning position for cleaning.
  • the number of the polishing modules is at least two, the first polishing arm obtains the wafer from the fixed working position, and then polishes it on the first polishing platform, and at the same time, another wafer is placed behind the fixed working position, The second polishing arm obtains another wafer from the fixed working position, and performs polishing on the second polishing platform.
  • the number of the polishing units is three, and they are arranged adjacently in the longitudinal direction, and each polishing unit is provided with two polishing modules.
  • the line connecting the centers of the polishing platforms of the two polishing modules in a single polishing unit has an intersection with the central axis of the fixed working station.
  • the beneficial effects of the present invention are: 1) the polishing arm of each polishing module is independently controlled, with better stability and higher flexibility; 2) the working time of each polishing module can be independently controlled to meet different polishing requirements; 3) The polishing liquid between different polishing modules will not produce cross-effects, and the polishing effect is better; 4) The trajectory of the entire workflow is simple and smooth, the movement of the entire polishing process is compact, and the polishing efficiency is high; 5) Multiple polishing The layout of units arranged adjacent to each other in the vertical direction can choose any number of polishing units according to the needs, or choose any number of polishing modules to carry out the entire polishing process, which can adapt to different process needs; 6) The layout is more compact, leaving more 7) Only one fixed working position is needed to realize the polishing process of single or multiple wafers with multiple polishing modules, and the moving path of the polishing process is greatly shortened, which minimizes the transmission process time, and the polishing Higher efficiency, fixed working station with simple structure, convenient maintenance, and lowest cost.
  • the two polishing arms only have a shared area at the fixed working position, so it can be Before the wafer is placed into the fixed workbench, another robot arm can wait to be put in the non-shared area near the fixed workbench, so as to grab the wafer in the least time.
  • a fixed working position can realize the wafer picking and placing of the polishing modules on both sides, without moving the working position to get close to the left polishing module or the right polishing module, Control is more accurate.
  • FIG. 1 is a schematic diagram of a wafer polishing system in the prior art.
  • FIG. 2 is a schematic diagram of a polishing unit in Embodiment 1 of the present invention.
  • FIG. 3 is a schematic diagram of the trajectory of the active area of the left polishing module with the first polishing arm in Embodiment 1 of the present invention.
  • FIG. 4 is a schematic diagram of the first track of the left polishing module in Embodiment 1 of the present invention.
  • Fig. 5 is a schematic diagram of the trajectory of the active area of the first polishing arm and the active area of the second polishing arm of the two-side polishing module in Embodiment 1 of the present invention.
  • FIG. 6 is a schematic diagram of the second track of the right polishing module belt in Embodiment 1 of the present invention.
  • Fig. 7 is a schematic diagram of Embodiment 1 of the present invention.
  • Fig. 8 is a schematic layout diagram of three polishing units according to the present invention.
  • FIG. 9 is a first schematic diagram of the process in Embodiment 2 of the present invention.
  • Fig. 10 is a second schematic diagram of the process in the second embodiment of the present invention.
  • Fig. 11 is the third schematic diagram of the process in the second embodiment of the present invention.
  • FIG. 12 is a schematic diagram of the process in Embodiment 3 of the present invention.
  • polishing unit-1 fixed working position-2, polishing module-3, first polishing platform-311, second polishing platform-312, first polishing arm-321, second polishing arm 322, first track- 41, the second track-42, the overlapping part of the active area-5, the center of the overlapping part-51.
  • a wafer polishing system comprising at least one polishing unit 1;
  • the polishing unit 1 includes a fixed working position 2, and two polishing modules 3, and the polishing modules 3 are located on both sides of the fixed working position 2;
  • the polishing module 3 includes a polishing platform and a polishing arm, and the polishing arm can drive the wafer to move relative to the polishing platform to realize the polishing process; the activities here include that the wafer moves synchronously with the polishing arm, and also includes the gap between the wafer and the polishing arm. will move relative to
  • the polishing arms of the polishing modules 3 on both sides are located in the diagonal direction of the fixed working position 2, and the polishing arms can swing between the fixed working position 2 and the polishing platform to realize the wafer transfer, and the active areas of the polishing arms have overlapping part.
  • the polishing arm here refers to a polishing head that includes a rotating arm and a wafer for adsorption. Since the polishing head will move relative to the rotating arm, more precisely, when the polishing module 3 is in the state of polishing a wafer, The polishing arm is located in the diagonal direction of the fixed working position 2, or in other words, the rotating arm is always located in the diagonal direction of the fixed working position 2.
  • polishing modules 3 there are two polishing modules 3 , that is to say, one polishing module 3 is provided on both sides of the fixed working position 2 .
  • the first polishing module located on the left side of the fixed work station 2 includes a first polishing platform 311 and a first polishing arm 321
  • the second polishing module located on the right includes a second polishing arm 321.
  • platform 312 and second polishing arm 322 are two polishing modules 3 , that is to say, one polishing module 3 is provided on both sides of the fixed working position 2 .
  • the first polishing arm 321 of the first polishing module takes the wafer from the fixed working position 2, it rotates counterclockwise to the first polishing platform 311 to complete the polishing of the first polishing module
  • the wafer is put back to the fixed working position 2 along the first track 41 , at this time, it rotates clockwise, and the swing angle of the first polishing arm 321 is less than 180°.
  • the first polishing arm 321 can also be rotated clockwise onto the first polishing platform 311, and after finishing the polishing process of the first polishing module, it can be rotated counterclockwise to return the wafer to the fixed working position. 2.
  • the second polishing arm 322 of the second polishing module takes the wafer from the fixed working position 2, it rotates clockwise to the second polishing platform 321 to complete the polishing of the second polishing module
  • the wafer is put back to the fixed working position 2 along the second track 42 , at this time, it rotates counterclockwise, and the swing angle of the second polishing arm 322 is less than 180°.
  • the second polishing arm 322 can also rotate counterclockwise to the second polishing platform 321, and after finishing the polishing process of the second polishing module, turn clockwise to put the wafer back to the fixed working position 2.
  • the above-mentioned first trajectory 41 and the second trajectory 42 are approximately S-shaped. To be precise, the middle part of the S-shaped falls on the fixed working position 2 . Moreover, as shown in FIG. 5 , the overlapping portion 5 of the active area is in the shape of an eye, and the central axis of the fixed working position 2 passes through the center 51 of the overlapping portion.
  • the first track 41 and the second track 42 are wider travel tracks, which not only include the track of the outer edge of the polishing arm, but also the track of any point on the wafer, including the track of the center of the wafer. , here refers to the fact that the movement trajectory passed by the center of the wafer has one and only one tangent point, as shown in Figure 7.
  • the fixed working station 2 is designed as a lifting structure.
  • the fixed working position 2 does not interact with the first polishing arm 321 to load and unload wafers, the fixed working position 2 is located below the plane where the first polishing platform 311 is located; When the circle is loaded and unloaded, it is located below the plane where the second polishing platform 321 is located.
  • the specific lifting structure of the fixed working station 2 can be realized in the prior art, and will not be described in detail.
  • each polishing unit 1 is provided with two polishing modules 3 .
  • the line connecting the centers of the polishing platforms of the two polishing modules 3 in a single polishing unit 1 has an intersection with the central axis of the fixed working station 2 .
  • the connecting line between the center of the first polishing platform 311 and the center of the second polishing platform 321 passes through the extension of the central axis of the fixed working station 2 .
  • the number of polishing modules 3 is still two for illustration.
  • the first polishing arm 321 of the first polishing module obtains the wafer from the fixed working position 2, it performs polishing on the first polishing platform 311.
  • the wafer is put back to the fixed working position 2 along the first track 41, transferred from the fixed working position 2, and continues to rotate in the same direction to The cleaning position is cleaned, as shown in Figure 10.
  • the second polishing arm 322 of the second polishing module After the second polishing arm 322 of the second polishing module obtains the same wafer from the fixed working position 2, it polishes on the second polishing platform 321. After completing the polishing process of the second polishing module, the wafer is moved along the first The second track 42 is put back to the fixed working position 2, and transferred from the fixed working position 2, and continues to rotate in the same direction to the cleaning position for cleaning, as shown in Figure 11.
  • the number of polishing modules 3 is still two for illustration. After the first polishing arm 321 of the first polishing module obtains the first wafer from the fixed work position 2, it is placed on the first polishing platform 311 Perform polishing to complete the polishing process of the first polishing module.
  • the second wafer is placed on the fixed working position 2 by the robot arm.
  • the second polishing arm 322 of the second polishing module obtains the second wafer from the fixed working position 2 , it performs polishing on the second polishing platform 321 to complete the polishing process of the second polishing module.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明公开了一种晶圆抛光系统，至少包括一个抛光单元；抛光单元包括一个固定工作位，及两个抛光模组，抛光模组位于固定工作位的两侧；抛光模组包括抛光平台和抛光臂，抛光臂可带动晶圆相对抛光平台活动，以实现抛光工艺；两侧抛光模组的抛光臂位于固定工作位的斜对角方向，抛光臂分别可在固定工作位和抛光平台之间摆动实现晶圆的转移，且抛光臂的活动区域具有重叠部分。本发明每个抛光模组的抛光臂独立控制，稳定性更好，灵活度更高；仅仅需要一个固定工作位就可以实现多个抛光模组配合实现单个或多个晶圆的抛光工艺，抛光过程的移动路径大大缩短，使得传输过程时间最小化，抛光效率更高。

Description

一种晶圆抛光系统 技术领域
本发明属于半导体集成电路芯片制造技术领域，尤其是涉及一种晶圆抛光系统。
背景技术
化学机械平坦化(Chemical Mechanical Planarization,CMP)设备是集成电路制造领域的七大关键设备之一。
目前，化学机械抛光技术已经发展成集在线量测、在线终点检测、清洗等技术于一体的化学机械抛光技术，是集成电路向微细化、多层化、薄型化、平坦化工艺发展的产物。同时也是晶圆由200mm向300mm乃至更大直径过渡、提高生产率、降低制造成本、衬底全局平坦化所必需的工艺技术。
化学机械抛光平坦化设备通常包括半导体设备前端模块、清洗单元和抛光单元。半导体设备前端模块主要包括存放晶圆的片盒、传片机械手和空气净化系统等；清洗单元主要包括数量不等的兆声波清洗部件、滚刷清洗部件、干燥部件和各部件之间传输晶圆的装置等；抛光单元通常包括工作台、抛光盘、抛光头、抛光臂、修整器、抛光液臂等部件，每个部件按照工艺加工位置布置在工作台上。实际的晶圆加工过程中发现，抛光单元与清洗、晶圆运输等模块的空间布置对于化学机械平坦化设备整体的抛光产出有极大的影响；而晶圆在抛光单元与外部以及在抛光单元之间的传输通常依靠装卸台来实现。
关于装卸台与抛光单元的空间布局，市面上大多采用装卸台与 三个抛光单元为正方形布局的形式。如图1所示，4个抛光头固定在十字旋转工作台上，也就意味着一片晶圆从进入抛光区域后就某个抛光头一一对应，且一个装卸台需要给三个抛光单元提供装卸服务，抛光头和抛光台数量不可调整，每个抛光头的抛光时间不可单独控制，时效性差，灵活度低，不同抛光台上的液体容易溅落产生交叉影响，影响抛光效果，工艺过程复杂。
发明内容
为了克服现有技术的不足，本发明提供一种晶圆抛光系统，其包含的每个抛光模组单独控制，控制灵活度高，抛光模组共用一个固定工作位，设备空间紧凑，晶圆活动轨迹的设计使得其传输效率高，进而提高了抛光效率。
本发明解决其技术问题所采用的技术方案是：一种晶圆抛光系统，至少包括一个抛光单元；
所述抛光单元包括一个固定工作位，及两个抛光模组，所述抛光模组位于固定工作位的两侧；
所述抛光模组包括抛光平台和抛光臂，所述抛光臂可带动晶圆相对抛光平台活动，以实现抛光工艺；
两侧抛光模组的抛光臂位于固定工作位的斜对角方向，所述抛光臂分别可在固定工作位和抛光平台之间摆动实现晶圆的转移，且抛光臂的活动区域具有重叠部分。
进一步的，一个抛光模组的抛光臂从所述固定工作位上获取晶圆后，完成该抛光工艺，将晶圆沿第一轨迹放回至固定工作位；另一抛 光模组的抛光臂从所述固定工作位上获取晶圆后，完成该抛光工艺，将晶圆沿第二轨迹放回至固定工作位；所述第一轨迹和第二轨迹的走向呈近似S字形。
进一步的，所述活动区域的重叠部分呈眼形，所述固定工作位的中心轴线通过重叠部分的中心。
进一步的，所述第一轨迹和第二轨迹中由晶圆圆心经过的活动轨迹有且仅有一个切点。
进一步的，所述抛光臂的摆动角度小于180°。
进一步的，所述固定工作位为升降式结构，当固定工作位不与抛光臂交互进行晶圆的装卸时，其位于抛光平台所在平面以下位置。
进一步的，所述抛光模组的数量为两个，第一抛光臂自固定工作位获取晶圆后，在第一抛光平台上进行抛光，完成该抛光模组的抛光工艺后，第一抛光臂将晶圆放回至固定工作位，并从固定工作位转移，第二抛光臂自固定工作位获取晶圆，在第二抛光平台上进行抛光；同时另一晶圆放置在固定工作位。
进一步的，所述第一抛光臂将完成抛光后的晶圆放回至固定工作位后，继续转动至清洗位进行清洗；所述第二抛光臂将完成抛光后的晶圆放回至固定工作位后，继续转动至清洗位进行清洗。
进一步的，所述抛光模组的数量为至少两个，第一抛光臂自固定工作位获取晶圆后，在第一抛光平台上进行抛光，同时，另一晶圆放置在固定工作位后，第二抛光臂自固定工作位获取另一晶圆，在第二抛光平台上进行抛光。
进一步的，所述抛光单元的数量为三个，且纵向相邻排布，每个抛光单元设置两个抛光模组。
进一步的，单个抛光单元内的两个抛光模组的抛光平台圆心连线与所述固定工作位的中心轴线具有交点。
本发明的有益效果是，1)每个抛光模组的抛光臂独立控制，稳定性更好，灵活度更高；2)每个抛光模组的工作时间可独立控制，适应不同的抛光需求；3)不同抛光模组之间的抛光液不会产生交叉影响，抛光效果更佳；4)整个工作流程的轨迹简单、流畅，整个抛光工艺的运动行程紧凑，抛光效率高；5)多个抛光单元纵向相邻排布的布局可以根据需要选择任意数量的抛光单元，或者说选择任意数量的抛光模组，进行整个抛光流程，可以适应不同的工艺需要；6)布局更紧凑，留有更多的空间设置清洗位；7)仅仅需要一个固定工作位就可以实现多个抛光模组配合实现单个或多个晶圆的抛光工艺，抛光过程的移动路径大大缩短，使得传输过程时间最小化，抛光效率更高，固定的工作位结构简单，维护方便，成本最低，也使工作位和抛光模组位置更接近，使整体机台体积更小，且整个过程中，晶圆的移动路径只有S字形轨迹，尽可能移动距离最小化，可有效减少晶圆表面液体挥发，也有效减少杂质掉落到晶圆上的可能性；且，两个抛光臂在固定工作位处才存在共用面积，故可在晶圆放置入固定工作台之前，另一机械臂就可在靠近固定工作位的非共用面积区域等待放入，以在最少的时间内抓取晶圆。以将整个抛光效率达到最大化；8)一个固定工作位就能实现两侧抛光模组的晶圆取放，不需要对工作位 进行移动以接近左侧抛光模组或右侧抛光模组，控制更加准确。
附图说明
图1为现有技术中晶圆抛光系统的简示图。
图2为本发明实施例一中抛光单元的示意图。
图3为本发明实施例一中左侧抛光模组带第一抛光臂活动区域轨迹的示意图。
图4为本发明实施例一中左侧抛光模组带第一轨迹的示意图。
图5为本发明实施例一中两侧抛光模组带第一抛光臂活动区域轨迹、第二抛光臂活动区域轨迹的示意图。
图6为本发明实施例一中右侧抛光模组带第二轨迹的示意图。
图7为本发明实施例一中的示意图。
图8为本发明抛光单元数量为三个的布局示意图。
图9为本发明实施例二中的过程示意图一。
图10为本发明实施例二中的过程示意图二。
图11为本发明实施例二中的过程示意图三。
图12为本发明实施例三中的过程示意图。
其中，抛光单元-1，固定工作位-2，抛光模组-3，第一抛光平台-311，第二抛光平台-312，第一抛光臂-321，第二抛光臂322，第一轨迹-41，第二轨迹-42，活动区域的重叠部分-5，重叠部分的中心-51。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案，下面将结合本发明实施例中的附图，对发明实施例中的技术方案进行清楚、完整的 描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
实施例一
一种晶圆抛光系统，至少包括一个抛光单元1；
如图2所示，抛光单元1包括一个固定工作位2，及两个抛光模组3，抛光模组3位于固定工作位2的两侧；
抛光模组3包括抛光平台和抛光臂，抛光臂可以带动晶圆相对抛光平台活动，以实现抛光工艺；此处的活动包括晶圆随着抛光臂同步运动，也包括晶圆和抛光臂之间会相对运动；
两侧的抛光模组3的抛光臂位于固定工作位2的斜对角方向，抛光臂分别可以在固定工作位2和抛光平台之间摆动实现晶圆的转移，且抛光臂的活动区域具有重叠部分。此处的抛光臂指的是包括旋转臂和用于吸附晶圆的抛光头，由于抛光头会相对旋转臂发生运动，因此更确切地说，当抛光模组3处于抛光晶圆的状态下，其抛光臂位于固定工作位2的斜对角方向，或者说，旋转臂始终位于固定工作位2的斜对角方向。
在本实施例中，抛光模组3的数量为两个，也就是说，固定工作位2的两侧分别设有一个抛光模组3。以图2所示方向为例进行说明，位于固定工作位2左侧的第一抛光模组包括第一抛光平台311和第一抛光臂321，位于右侧的第二抛光模组包括第二抛光平台312和第二 抛光臂322。
如图3、图4所示，第一抛光模组的第一抛光臂321从固定工作位2上获取晶圆后，逆时针转动至第一抛光平台311上，完成第一抛光模组的抛光工艺后，将晶圆沿着第一轨迹41放回至固定工作位2，此时为顺时针转动，且第一抛光臂321的摆动角度小于180°。
当然，在其他实施例中，第一抛光臂321也可以顺时针转动至第一抛光平台311上，完成第一抛光模组的抛光工艺后，再逆时针转动将晶圆放回至固定工作位2。
如图5、图6所示，第二抛光模组的第二抛光臂322从固定工作位2上获取晶圆后，顺时针转动至第二抛光平台321上，完成第二抛光模组的抛光工艺后，将晶圆沿着第二轨迹42放回至固定工作位2，此时为逆时针转动，且第二抛光臂322的摆动角度小于180°。
当然，在其他实施例中，第二抛光臂322也可以逆时针转动至第二抛光平台321上，完成第二抛光模组的抛光工艺后，再顺时针转动将晶圆放回至固定工作位2。
上述第一轨迹41和第二轨迹42的走向呈近似S字形，准确地说，该S字形的中间部分落在固定工作位2上。而且，如图5所示，活动区域的重叠部分5呈眼形，固定工作位2的中心轴线通过重叠部分的中心51。第一轨迹41和第二轨迹42为较宽的一个行程轨迹，其不仅包括抛光臂外边缘经过的活动轨迹，还可以是晶圆任意一点经过的活动轨迹，当然包括晶圆圆心经过的活动轨迹，此处指的是晶圆圆心经过的活动轨迹有且仅有一个切点，如图7所示。
为了避免固定工作位2对两个抛光模组的第一抛光臂321和第二抛光臂322的活动产生干涉，将固定工作位2设计为升降式结构。当固定工作位2不与第一抛光臂321交互进行晶圆的装卸时，固定工作位2位于第一抛光平台311所在平面以下位置；当固定工作位2不与第二抛光臂322交互进行晶圆的装卸时，其位于第二抛光平台321所在平面以下位置。固定工作位2具体的升降结构则为现有技术可以实现，不再赘述。
如图8所示，本实施例中，抛光单元1的数量为三个，且纵向相邻排布，每个抛光单元1设置两个抛光模组3。
单个抛光单元1内的两个抛光模组3的抛光平台圆心连线与固定工作位2的中心轴线具有交点。换句话说，第一抛光平台311的圆心和第二抛光平台321的圆心的连接线，经过固定工作位2的中心轴线的延长线。
实施例二
在本实施例中，仍然以抛光模组3的数量为两个进行说明，第一抛光模组的第一抛光臂321从固定工作位2获取晶圆后，在第一抛光平台311上进行抛光，如图9所示，完成第一抛光模组的抛光工艺后，将晶圆沿着第一轨迹41放回至固定工作位2，并从固定工作位2转移，继续朝同一个方向转动至清洗位进行清洗，如图10所示。
第二抛光模组的第二抛光臂322从固定工作位2获取同一个晶圆后，在第二抛光平台321上进行抛光，完成第二抛光模组的抛光工艺 后，将晶圆沿着第二轨迹42放回至固定工作位2，并从固定工作位2转移，继续朝同一个方向转动至清洗位进行清洗，如图11所示。
实施例三
上述实施例一、实施例二中处理的是同一个晶圆，而本实施例中以处理不同的晶圆进行描述。
在本实施例中，仍然以抛光模组3的数量为两个进行说明，第一抛光模组的第一抛光臂321从固定工作位2获取第一晶圆后，在第一抛光平台311上进行抛光，完成第一抛光模组的抛光工艺。
与此同时，第二晶圆通过机械臂放置在固定工作位2。
如图12所示，第二抛光模组的第二抛光臂322从固定工作位2获取第二晶圆后，在第二抛光平台321上进行抛光，完成第二抛光模组的抛光工艺。
上述具体实施方式用来解释说明本发明，而不是对本发明进行限制，在本发明的精神和权利要求的保护范围内，对本发明作出的任何修改和改变，都落入本发明的保护范围。

Claims (11)

  1. 一种晶圆抛光系统，其特征在于：
    至少包括一个抛光单元；
    所述抛光单元包括一个固定工作位，及两个抛光模组，所述抛光模组位于固定工作位的两侧；
    所述抛光模组包括抛光平台和抛光臂，所述抛光臂可带动晶圆相对抛光平台活动，以实现抛光工艺；
    两侧抛光模组的抛光臂位于固定工作位的斜对角方向，所述抛光臂分别可在固定工作位和抛光平台之间摆动实现晶圆的转移，且抛光臂的活动区域具有重叠部分。
  2. 根据权利要求1所述的晶圆抛光系统，其特征在于：一个抛光模组的抛光臂从所述固定工作位上获取晶圆后，完成该抛光工艺，将晶圆沿第一轨迹放回至固定工作位；另一抛光模组的抛光臂从所述固定工作位上获取晶圆后，完成该抛光工艺，将晶圆沿第二轨迹放回至固定工作位；所述第一轨迹和第二轨迹的走向呈近似S字形。
  3. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述活动区域的重叠部分呈眼形，所述固定工作位的中心轴线通过重叠部分的中心。
  4. 根据权利要求2所述的晶圆抛光系统，其特征在于：所述第一轨迹和第二轨迹中由晶圆圆心经过的活动轨迹有且仅有一个切点。
  5. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述抛光臂的摆动角度小于180°。
  6. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述固定工作位为升降式结构，当固定工作位不与抛光臂交互进行晶圆的装卸时，其位于 抛光平台所在平面以下位置。
  7. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述抛光模组的数量为两个，第一抛光臂自固定工作位获取晶圆后，在第一抛光平台上进行抛光，完成该抛光模组的抛光工艺后，第一抛光臂将晶圆放回至固定工作位，并从固定工作位转移，第二抛光臂自固定工作位获取晶圆，在第二抛光平台上进行抛光；同时另一晶圆放置在固定工作位。
  8. 根据权利要求7所述的晶圆抛光系统，其特征在于：所述第一抛光臂将完成抛光后的晶圆放回至固定工作位后，继续转动至清洗位进行清洗；所述第二抛光臂将完成抛光后的晶圆放回至固定工作位后，继续转动至清洗位进行清洗。
  9. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述抛光模组的数量为至少两个，第一抛光臂自固定工作位获取晶圆后，在第一抛光平台上进行抛光，同时，另一晶圆放置在固定工作位后，第二抛光臂自固定工作位获取另一晶圆，在第二抛光平台上进行抛光。
  10. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述抛光单元的数量为三个，且纵向相邻排布，每个抛光单元设置两个抛光模组。
  11. 根据权利要求10所述的晶圆抛光系统，其特征在于：单个抛光单元内的两个抛光模组的抛光平台圆心连线与所述固定工作位的中心轴线具有交点。
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