WO2023190230A1 - 光触媒部材 - Google Patents
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- WO2023190230A1 WO2023190230A1 PCT/JP2023/011976 JP2023011976W WO2023190230A1 WO 2023190230 A1 WO2023190230 A1 WO 2023190230A1 JP 2023011976 W JP2023011976 W JP 2023011976W WO 2023190230 A1 WO2023190230 A1 WO 2023190230A1
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- photocatalyst
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- cerium oxide
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- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/06—Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
- B01J21/063—Titanium; Oxides or hydroxides thereof
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- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/10—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of rare earths
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- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/26—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24
- B01J31/38—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24 of titanium, zirconium or hafnium
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- B01J35/19—Catalysts containing parts with different compositions
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/391—Physical properties of the active metal ingredient
- B01J35/395—Thickness of the active catalytic layer
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/024—Multiple impregnation or coating
- B01J37/0244—Coatings comprising several layers
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- B01J2235/00—Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties
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- B01J2235/00—Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties
- B01J2235/15—X-ray diffraction
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- B01J2235/00—Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties
- B01J2235/30—Scanning electron microscopy; Transmission electron microscopy
Definitions
- the present invention relates to a photocatalyst member.
- This application claims priority based on Japanese Patent Application No. 2022-056768 filed in Japan on March 30, 2022, the contents of which are incorporated herein.
- Photocatalysts whose catalytic action is produced by light such as ultraviolet rays and visible light, are currently attracting attention because of their various effects.
- the effects of photocatalysts include, in particular, the production of hydrogen/oxygen by photolysis of water, as seen in the Hyundai-Fujishima effect, strong oxidation due to the production of active oxygen on the surface, and the production of many hydroxyl groups on the surface. It is known for its superhydrophilic properties.
- Photocatalysts can be used in a variety of applications, including sterilizing viruses and pathogens, such as the coronavirus that has become particularly prevalent in recent years, by irradiating light, decomposing formaldehyde, which causes sick house syndrome, and anti-fog films that utilize superhydrophilic properties. .
- anti-reflection coatings made of dielectric multilayer films with a thickness of 1 ⁇ m or less and made by alternately laminating inorganic materials with different refractive indexes use light interference, so even if a transparent foreign substance such as a slight fingerprint remains on the surface, it will interfere. The effect is disrupted and transparent foreign objects are easily visible.
- the anti-reflection film was covered with a substance with low surface energy such as a fluorine compound to suppress the adhesion of transparent foreign matter such as fingerprints, but the effect was not sufficient and cleaning such as wiping was also required.
- a substance with low surface energy such as a fluorine compound
- Photocatalysts are highly expected to solve such problems because if transparent foreign substances, which are organic substances, can be decomposed by photocatalysts, there will be no need for cleaning.
- Titanium oxide is known as a material with photocatalytic ability.
- Vacuum thin film forming techniques such as sputtering are known as methods for forming titanium oxide on the surface of some base material.
- heat treatment at 300°C or higher is required during or after film formation. .
- Another proposed method is to apply crystallized titanium oxide fine powder to a base material together with a binder to fix it. This coating method is very widely used because it does not require treatments such as heating and can treat large areas, and most of the photocatalysts currently being commercialized are based on this coating method.
- the binder used to fix it to the substrate is often an organic substance, and when it comes into contact with the photocatalyst, the binder decomposes, which is called a choking phenomenon, and the photocatalyst itself also falls off.
- Another problem is that if the ratio of the binder is increased to strengthen the bond between the substrate and the photocatalyst, the ratio of the photocatalyst will be relatively lowered, resulting in lower catalytic performance.
- Patent Document 1 discloses a method in which the duty ratio of voltage application is kept below a certain value using a single cathode or dual cathode. Patent Document 1 states that crystallized titanium oxide can be obtained by this method, but when the inventor conducted a reproduction experiment, no crystallization could be confirmed, and it is possible that it depends on the configuration of the equipment etc. There is.
- Patent Document 2 and Patent Document 3 disclose a method of promoting crystallization by performing the deposition of a titanium metal film and the oxidation treatment in two steps.
- this requires a complex equipment configuration and is difficult to implement with a general-purpose sputtering apparatus.
- Patent Document 4 As an example using a general-purpose sputtering device, as shown in Patent Document 4, a method has been attempted in which water is added during film formation and crystallization is performed by heat treatment at a relatively low temperature (200°C or higher). ing. However, since low-temperature crystallization requires heating at 200° C. or higher, many plastic substrates are deformed. Therefore, there is a problem that it lacks versatility.
- the present invention was made to solve the above problems, and its purpose is to search for a base layer different from zirconium oxide and to provide a photocatalyst with high industrial productivity.
- cerium oxide as a base layer, a crystallized cerium oxide layer can be formed at a high deposition rate and extremely thin, and the titanium oxide layer deposited on top of it can be formed with an extremely high deposition rate without heat treatment. It was able to provide photocatalytic performance.
- a base layer containing cerium oxide (CeO 2 ) or other elements other than cerium oxide in an amount not exceeding 10 atomic % based on the cerium element of cerium oxide is formed.
- a photocatalyst layer containing titanium oxide (TiO 2 ) or other elements other than titanium oxide in an amount not exceeding 10 atomic % based on the titanium element of titanium oxide is formed. This revealed that the photocatalytic layer exhibited photocatalytic performance without heat treatment.
- the underlayer of the present invention is preferably composed of only cerium oxide, it may contain other elements as long as the crystallinity of cerium oxide can be maintained.
- cerium oxide and other metals may be mixed to form a composite target in order to achieve stable discharge.
- metal may be incorporated into the film during film formation, but it is sufficient as long as the crystallinity of the cerium oxide can be maintained.
- the thickness of the underlayer is not particularly limited, and it has been found that even a thickness of 10 nm, for example, is effective.
- the base material is a plastic film or the like, the surface may not be smooth, so the thickness of the base layer is preferably 20 nm or more.
- the thickness of the base layer is 20 nm or more, continuity of the base layer can be ensured and sufficient crystallinity can be maintained.
- the thickness of the underlayer is 100 nm or more, it not only imposes a thermal load on the base material but also is industrially inefficient, so it is preferably 100 nm or less.
- the photocatalyst layer of the present invention is composed of titanium oxide (TiO 2 ), it may contain other elements in addition to titanium oxide as long as it exhibits photocatalytic performance.
- titanium oxide has a bandgap in the ultraviolet region and requires ultraviolet light to function as a photocatalyst, but there are examples in which nitrogen has been added to make it respond to visible light.
- nitrogen can also be added to form a visible-responsive photocatalyst.
- a metal element such as niobium may be added to increase the electrical conductivity of the photocatalyst layer.
- the thickness of the photocatalyst layer is not particularly limited, it is preferably 20 nm or more so that photocatalytic performance is clearly expressed. Although the effects of the present invention can be obtained even if the photocatalyst layer is thick, it is preferably 200 nm or less from an industrial perspective.
- the present invention may include layers other than the base layer and the photocatalyst layer.
- silicon oxide may be formed on the surface of the photocatalyst layer for the purpose of maintaining the superhydrophilicity of the photocatalyst.
- a conductive layer may be formed before forming the base layer.
- the present invention is completed by forming a photocatalyst layer containing titanium oxide on the side opposite to the base material with respect to the underlayer containing cerium oxide.
- the gist of the invention is as follows.
- a photocatalytic member in which a photocatalytic layer is formed on a base material through a base layer, the base layer having at least cerium oxide, and the photocatalyst layer having at least titanium oxide.
- a photocatalyst member characterized by:
- the base layer may be composed of only cerium oxide, or may be composed of cerium oxide and at least one other element in an elemental ratio of cerium of 10 atomic % or less.
- the photocatalyst layer may be composed only of titanium oxide, or may be composed of titanium oxide and at least one other element in an elemental ratio of titanium of 10 atomic % or less.
- the thickness of the base layer may be 10 nm or more.
- the thickness of the photocatalyst layer may be 20 nm or more.
- hydrophilic retention layer using silicon oxide or a composite oxide of silicon oxide and another metal may be provided on the photocatalyst layer.
- the base material may be transparent.
- the base material may be a polymer film.
- FIG. 1 is a cross-sectional view showing an outline of a photocatalyst member according to the present invention.
- cerium oxide and zirconium oxide The cerium oxide used in the present invention will be compared with the zirconium oxide used in Patent Document 5. First, we will compare the crystallinity of each material when it is deposited.
- the exhaust system consists of a turbomolecular pump and a rotary pump, and is capable of exhausting to 5 ⁇ 10 ⁇ 4 Pa or less.
- Four cathodes are placed within the vacuum chamber, each capable of placing a 2 inch diameter target material.
- a shutter mechanism is installed between each cathode, and the opening/closing time can be controlled by a timer. Therefore, if the film formation rate is known in advance, the thickness of the film can be precisely controlled by controlling the opening time of the shutter.
- a gas supply pipe is connected to the vacuum chamber, and can supply argon gas, oxygen gas, and nitrogen gas. The flow rate of each gas can be precisely controlled using a mass flow meter installed between the gas cylinder and the vacuum chamber.
- a conductance valve is installed between the turbomolecular pump and the vacuum chamber, and by adjusting the pumping speed, it is possible to adjust the film forming pressure to any desired value.
- the substrate can be placed on a stage facing the target.
- the stage can rotate to make the thickness of the film uniform, and heating up to 300°C is also possible. Furthermore, the distance between the stage and the target can be adjusted.
- the silicon substrate was placed on the stage in the RF sputtering apparatus described above, it was evacuated to a pressure of 5 ⁇ 10 ⁇ 4 Pa or less, and argon gas and oxygen gas were introduced.
- the ratio of argon gas to oxygen gas was determined in advance by investigating the conditions under which no absorption occurs in the visible light region.
- a target formed by sintering cerium oxide and molding it into a target shape was used.
- zirconium oxide metallic zirconium was used as a target. It is generally known that a metal target has a faster film formation rate than an oxide target.
- RF power of 200 W was applied to a 2-inch target, a film was formed on a silicon substrate for a certain period of time, and the film thickness was evaluated using spectroscopic ellipsometry (M-2000, manufactured by J.A. Woollam).
- M-2000 manufactured by J.A. Woollam
- the amplitude ratio ⁇ and phase difference ⁇ of p-polarized light and s-polarized light are obtained for each wavelength, but by applying an appropriate optical model to these and performing fitting including film thickness as a parameter, the optical constants can be obtained.
- the film thickness can be obtained. The film thickness was determined based on the measurement results at the center of the silicon substrate. Table 1 shows the film thickness divided by the film formation time.
- cerium oxide has a film formation rate more than twice that of zirconium oxide.
- a film was formed on a glass substrate and evaluated by XRD.
- alkali-free glass OA-10G manufactured by Nippon Electric Glass Co., Ltd.
- the cleaned alkali-free glass was placed on the stage in the above RF sputtering equipment, and the film was formed by adjusting the film forming time to a film thickness of 50 nm based on the film forming speed shown in Table 1. Gender was evaluated.
- XRD was measured using X'Pert PRO MPD (manufactured by PANalytical) with Cu ⁇ as a radiation source and incident at an incident angle of 1°. The XRD results are shown in FIG.
- zirconium oxide has a slight peak around 28°.
- cerium oxide has sharp peaks at the same position, as well as peaks at 33°, 47°, and 56°. Therefore, it can be said that cerium oxide is superior in terms of crystallinity.
- Figure 1 also shows the results for hafnium oxide for comparison. Hafnium is located just below zirconium on the periodic table and is expected to have similar properties to zirconium, but it has not crystallized.
- Partial heteroepitaxial growth is considered to be the reason why titanium oxide exhibits photocatalytic performance by forming the underlayer. It is thought that a crystal lattice is formed by the underlayer, and the titanium oxide crystals grow to match the crystallites. Therefore, it is thought that if the underlayer side undergoes clear crystallization with a thin film thickness, then the titanium oxide of the photocatalyst layer formed later will also promote crystallization.
- FIG. 2 is a sectional view schematically showing the structure of the photocatalyst member 1 according to the present invention.
- the photocatalytic member 1 according to the present embodiment is a photocatalytic member in which a photocatalytic layer 4 is formed on a base material 2 with a base layer 3 interposed therebetween, the base layer 3 having at least cerium oxide, and the photocatalyst layer 4 containing at least cerium oxide. Contains at least titanium oxide.
- the base material 2 of the present invention may be made of any material.
- the material of the base material 2 include glass, metal, resin, and ceramics.
- resin films with thinner resins have many advantages, such as being lightweight and can be bonded to various locations. Furthermore, in mass production for industrial reasons, there is an advantage that film formation can be performed continuously using a roll-to-roll sputtering device. Furthermore, when used in areas that require light to pass through, such as window glass or displays, transparent resin (polymer) films may be used.
- the material for the transparent resin film is not particularly limited, but includes, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyaramid, polyimide, polycarbonate, polyethylene, polypropylene, triacetylcellulose (TAC), and polycycloolefin. (COC, COP), etc. can be used.
- the thickness of the base material 2 is not particularly limited, but if the base material 2 is a resin film, it is preferably 20 ⁇ m or more and 200 ⁇ m or less, considering ease of handling during manufacturing and thinning of the member. .
- a coating made of, for example, an acrylic resin may be formed on at least one surface of the base material 2 by, for example, solution coating.
- the acrylic resin may have organic or inorganic particles dispersed therein for the purpose of improving haze and film running properties.
- the base layer 3 is a layer that promotes crystallization of the photocatalyst layer 4, which is the purpose of this embodiment.
- Base layer 3 contains cerium oxide. More specifically, the base layer 3 is composed of only cerium oxide, or composed of cerium oxide and at least one other element in a total elemental ratio of cerium of 10 atomic % or less. However, this configuration is just an example, and it is sufficient if the base layer 3 contains cerium oxide.
- the elements contained in the base layer 3 can be measured using, for example, an X-ray microanalyzer (XMA) or X-ray fluorescence analysis (XRF).
- XMA X-ray microanalyzer
- XRF X-ray fluorescence analysis
- any method may be used to manufacture the base layer 3.
- sputtering is effective from the viewpoint of laminating different materials to form a multilayer film.
- the thickness is at least 10 nm or more. Further, considering the influence of the surface roughness of the base material 2, etc., it is desirable that the thickness is 20 nm or more.
- the thickness of the base layer 3 can be measured by, for example, creating a cross-sectional section of a sample using a microtome method and using a transmission electron microscope. If the thickness of the base layer 3 is 20 nm or more, the continuity of the base layer 3 can be ensured more reliably even if the surface of the base material 2 is rough.
- the film thickness is desirably 100 nm or less.
- the base layer 3 is desirably composed of only cerium oxide, it may contain other elements as long as its crystallinity can be maintained.
- cerium oxide and other metals are mixed to form a composite target in order to achieve stable discharge during sputtering, the metal may be incorporated into the film during film formation. Even in such a case, it is sufficient that the crystallinity of the base layer 3 can be maintained.
- other metals include Zn and Al.
- the photocatalyst layer 4 is a layer that functions as a photocatalyst.
- the photocatalyst layer 4 contains titanium oxide as a photocatalyst. More specifically, the photocatalyst layer 4 is composed only of titanium oxide, or composed of titanium oxide and at least one other element in a total proportion of titanium element of 10 atomic % or less.
- this configuration is just an example, and it is sufficient that the photocatalyst layer 4 contains titanium oxide to the extent that the effects of this embodiment can be obtained.
- the elements contained in the photocatalyst layer 4 can be measured using, for example, an X-ray microanalyzer (XMA) or X-ray fluorescence analysis (XRF).
- XMA X-ray microanalyzer
- XRF X-ray fluorescence analysis
- the thickness of the photocatalyst layer 4 is desirably at least 20 nm or more in order for the photocatalyst layer 4 to function as a photocatalyst.
- the thickness of the photocatalyst layer 4 can be measured by, for example, creating a cross-sectional section of a sample using a microtome method and using a transmission electron microscope.
- the upper limit of the thickness is not particularly determined, titanium oxide also has a slow film formation rate, and from an industrial viewpoint of productivity, it is desirable that the thickness be 200 nm or less.
- the photocatalyst layer 4 may contain other elements as long as they exhibit photocatalytic performance.
- titanium oxide has a bandgap in the ultraviolet region and requires ultraviolet light to function as a photocatalyst, but there are examples in which nitrogen has been added to make it respond to visible light.
- nitrogen can also be added to form a visible-responsive photocatalyst.
- a metal element such as niobium may be added to increase the electrical conductivity of the photocatalyst layer.
- one or more layers of electrically conductive material may be laminated between the base material 2 and the base layer 3.
- electrically conductive material examples include indium-tin composite oxide (ITO) and aluminum-zinc composite oxide (AZO).
- ITO indium-tin composite oxide
- AZO aluminum-zinc composite oxide
- metal materials may be laminated.
- different oxides may be laminated to suppress oxidation caused by plasma when forming the base layer 3 on the metal material.
- an adhesion layer may be formed for the purpose of ensuring adhesion between the base material 2 and the base layer 3.
- a transparent material may be formed into a film for the purpose of increasing the transparency of the photocatalyst member 1.
- a smooth layer may be formed to make the surface of the base material 2 smooth.
- a transparent material may be formed on the surface of the photocatalyst layer 4.
- a hydrophilic retention layer using silicon oxide or a composite oxide of silicon oxide and another metal may be formed on the photocatalyst layer 4 so that superhydrophilicity can be maintained for a long time and in the dark.
- the titanium oxide used in the photocatalyst layer is a high refractive index material
- a low refractive index material such as silicon oxide may be laminated on the photocatalyst layer for the purpose of reducing the surface reflectance.
- the photocatalyst layer 4 can be made to function as a photocatalyst without heating the photocatalyst layer 4. Furthermore, cerium oxide has a fast film formation rate. Therefore, it is possible to produce a photocatalyst with high industrial productivity.
- Non-alkali glass (OA-10G manufactured by Nippon Electric Glass Co., Ltd.) was used as the base material.
- the base material was washed with water using a neutral detergent, and then subjected to ultrasonic cleaning in an ethanol solution for 10 minutes. After being pulled out of the solution, droplets were immediately removed using an air gun and dried.
- the base material was set in an RF sputtering device, and after exhausting the air, film formation was performed.
- a 50 nm thick film of cerium oxide was formed as a base layer, and a 50 nm thick layer of titanium oxide was further layered thereon as a photocatalyst layer, and then taken out to prepare a sample.
- Example 2 A sample was prepared under the same conditions as in Example 1 except that the thickness of cerium oxide was 10 nm.
- Example 3 A sample was prepared under the same conditions as in Example 1 except that the thickness of cerium oxide was 100 nm.
- Example 4 A sample was prepared under the same conditions as in Example 1 except that the thickness of titanium oxide was 20 nm.
- Example 5 A sample was prepared under the same conditions as in Example 1 except that the thickness of cerium oxide was 200 nm.
- Example 6 A sample was prepared under the same conditions as in Example 1, and then silicon oxide was formed into a film with a thickness of 5 nm using a sputtering apparatus.
- Example 7 Cycloolefin polymer (COP) was used as the base material. Before setting the substrate in the sputtering device, the surface of the COP was exposed to argon plasma for 5 W for 60 seconds in a vacuum device capable of plasma processing to remove surface contamination, and the substrate was immediately set in the sputtering device. Thereafter, a sample was prepared under the same conditions as in Example 1.
- COP Cycloolefin polymer
- Non-alkali glass (OA-10G manufactured by Nippon Electric Glass Co., Ltd.) was used as the base material.
- the substrate was washed with water using a neutral detergent, then subjected to ultrasonic cleaning in an ethanol solution for 10 minutes, pulled out of the solution, immediately removed droplets with an air gun, and dried to prepare a sample.
- Non-alkali glass (OA-10G manufactured by Nippon Electric Glass Co., Ltd.) was used as the base material.
- the base material was washed with water using a neutral detergent, and then subjected to ultrasonic cleaning in an ethanol solution for 10 minutes. After being pulled out of the solution, droplets were immediately removed using an air gun and dried.
- a base material was set in an RF sputtering device, and after exhausting the air, a titanium oxide film was deposited to a thickness of 50 nm, and then taken out to prepare a sample.
- Comparative example 3 A sample prepared under the same conditions as Comparative Example 2 was heated to 300°C in an electric furnace, held for 2 hours, then stopped heating the electric furnace, cooled in the furnace until it returned to room temperature, and then taken out to prepare a sample. .
- the contact angle of water was evaluated within 30 minutes to evaluate the presence or absence of superhydrophilicity.
- the contact angle of water was measured using a fully automatic contact angle meter DMo-702 (manufactured by Kyowa Interface Science Co., Ltd.) by dropping 1.5 ⁇ L of pure water. The measurement was repeated three times and the average value was taken as the contact angle after irradiation.
- Examples 4-5> Compared to Examples 1 to 3, even if the thickness of titanium oxide was 20 nm and 200 nm, respectively, the contact angle after irradiation with xenon light was 10° or less, indicating that it was in a superhydrophilic state and was functioning as a photocatalyst. I understand.
- Example 7 Although the glass transition point of COP is 150° C., the sample after film formation did not undergo any deformation, indicating that it was not exposed to high temperatures. It can be seen that the contact angle after irradiation with xenon light is 10° or less, indicating a superhydrophilic state and functioning as a photocatalyst.
- a photocatalyst member that exhibits high productivity without heat treatment.
- a photocatalytic member that is used for sterilizing viruses and pathogens, decomposing formaldehyde that causes sick building syndrome, antifogging films, and the like.
- this embodiment to an optical film that utilizes the optical interference effect, it is possible to impart a function of decomposing organic matter such as sweat, and it is possible to always maintain excellent optical properties.
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Abstract
Description
本出願は、2022年3月30日に、日本に出願された特願2022-056768に基づき優先権を主張し、その内容をここに援用する。
本発明は係る課題を解決するためになされたものであり、その目的とするところは、酸化ジルコニウムとは異なる下地層を探索し産業的に生産性の高い光触媒を提供することにある。
いずれにしても酸化セリウムを含む下地層に対して基材とは反対側に酸化チタンを含む光触媒層を成膜することにより本発明は完成する。本発明の要旨は以下の通りである。
本発明で使用した酸化セリウムについて特許文献5で用いた酸化ジルコニウムと比較して示す。まずはそれぞれの材料について成膜した際の結晶性を比較する。
上記結果をもとに、以下、本発明の好ましい実施の形態について図面を参照して詳細に説明する。
図2は本発明に係る光触媒部材1の構成を模式的に示す断面図である。
本実施形態に係る光触媒部材1は、基材2に対して下地層3を介して光触媒層4が形成された光触媒部材であって、下地層3が少なくとも酸化セリウムを有し、光触媒層4が少なくとも酸化チタンを有する。
本発明の基材2はどのような材料で構成されていてもよい。基材2の材質を例示すればガラス、金属、樹脂、セラミックスなどである。特に樹脂の厚みを薄くした樹脂フィルムは、軽量で様々な場所に貼合することができるなど利点が多い。さらに産業上の理由から大量生産する上ではロールツーロールスパッタ装置を用いて連続的に成膜処理できる利点がある。さらに、窓ガラスやディスプレイなど光を透過させる必要がある場所に用いる場合は透明樹脂(高分子)フィルムを用いることもある。
基材2の厚みは、特に限定されることはないが、基材2が樹脂フィルムである場合、製造時の取り扱いの容易さと部材の薄型化を考慮し、20μm以上200μm以下とすることが望ましい。なお、基材2の耐擦過性を向上させる観点から、基材2の少なくとも1面に例えばアクリル樹脂による被膜を例えば溶液塗布により形成することもできる。また上記アクリル樹脂の内部に曇り度とフィルム走行性を向上させる目的で有機もしくは無機の粒子を分散させたものを用いてもよい。
下地層3は本実施形態の目的である光触媒層4の結晶化を促進させる層である。下地層3は、酸化セリウムを含む。より具体的には、下地層3は、酸化セリウムのみで構成されるか、または、酸化セリウムとセリウム元素比率で合計10原子%以下の他の少なくとも1種類以上の元素とで構成される。ただしこの構成はあくまで一例であり、下地層3に酸化セリウムが含まれていればよい。下地層3に含まれる元素は例えばX線マイクロアナライザー(XMA)や蛍光X線分析(XRF)などによって測定可能である。
光触媒層4は光触媒として機能する層である。光触媒層4は、光触媒として酸化チタンを含む。より具体的には、光触媒層4は、酸化チタンのみで構成されるか、または、酸化チタンとチタン元素比率で合計10原子%以下の他の少なくとも1種類以上の元素とで構成される。ただしこの構成はあくまで一例であり、本実施形態の効果が得られる程度に光触媒層4に酸化チタンが含まれていればよい。光触媒層4に含まれる元素は例えばX線マイクロアナライザー(XMA)や蛍光X線分析(XRF)などによって測定可能である。
ここで、光触媒部材1に導電性を持たせる目的で基材2と下地層3との間に1層以上の導電材料を積層してもよい。このような導電材料としては、たとえばインジウム-錫複合酸化物(ITO)やアルミニウム-亜鉛複合酸化物(AZO)などが挙げられる。また、金属材料を積層してもよい。さらに金属材料の上に下地層3を成膜する際のプラズマによる酸化を抑制するために異なる酸化物を積層してもよい。さらに、基材2と下地層3の密着性を確保する目的で密着層を形成してもよい。さらに、基材2が透明基材の場合は、光触媒部材1の透明性を高める目的で透明材料を成膜してもよい。さらに、基材2の表面を平滑にするために平滑層を形成してもよい。
<実施例1>
基材として無アルカリガラス(日本電気硝子製OA-10G)を用いた。基材は中性洗剤を用いて水洗したのち、エタノール液中で超音波洗浄を10分間行い、液中から引き上げたのち、直ちにエアガンにて液滴を除去し乾燥した。RFスパッタリング装置に基材をセットして、排気後、成膜を行った。下地層として酸化セリウムを50nmの厚さで成膜し、さらにその上に光触媒層として酸化チタンを50nm積層したのちに取り出し、試料を作成した。
酸化セリウムの厚みを10nmとしたこと以外は実施例1と同一の条件で試料を作成した。
酸化セリウムの厚みを100nmとしたこと以外は実施例1と同一の条件で試料を作成した。
酸化チタンの厚みを20nmとしたこと以外は実施例1と同一の条件で試料を作成した。
酸化セリウムの厚みを200nm としたこと以外は実施例1と同一の条件で試料を作成した。
実施例1と同一の条件で試料を作成したのちに、そのままスパッタリング装置にて酸化ケイ素を5nmの厚みで成膜した。
基材として、シクロオレフィンポリマー(COP)を用いた。スパッタリング装置に基材を設置する前に、プラズマ処理できる真空装置にてCOPの表面をアルゴンプラズマにて5W、60秒暴露し表面の汚染を除去したのち直ちにスパッタリング装置に基材をセットした。その後実施例1と同一の条件で試料を作成した。
基材として無アルカリガラス(日本電気硝子製OA-10G)を用いた。基材は中性洗剤を用いて水洗したのち、エタノール液中で超音波洗浄を10分間行い、液中から引き上げたのち、直ちにエアガンにて液滴を除去し乾燥して試料を作成した。
基材として無アルカリガラス(日本電気硝子製OA-10G)を用いた。基材は中性洗剤を用いて水洗したのち、エタノール液中で超音波洗浄を10分間行い、液中から引き上げたのち、直ちにエアガンにて液滴を除去し乾燥した。RFスパッタリング装置に基材をセットして、排気後、酸化チタンを50nm成膜したのちに取り出し、試料を作成した。
比較例2と同一の条件作成した試料を電気炉で300℃まで昇温したのち、2時間保持し、その後電気炉の加熱を止め室温に戻るまで炉中で冷却したのち取り出して試料を作成した。
酸化セリウムを酸化ジルコニウムに変えたこと以外は実施例1と同一の条件で試料を作成した。
酸化ジルコニウムの厚みを10nmとしたこと以外は比較例4と同一の条件で試料を作成した。
酸化セリウムを酸化ハフニウムに変えたこと以外は実施例1と同一の条件で試料を作成した。
<超親水性評価>
作成した試料は外光の影響を除くために48時間暗所に静置した。その後、取り出してキセノン促進耐候性試験機Q-SUN Xe-3(Q-Lab Corp.製)に設置した。キセノン光は太陽光のスペクトルに近く、光量も制御できるため正確に光触媒の効果を検証することができる。放射照度 64W/m2(0.55W/m2/nm@340nm)、フィルターをDaylight-B/Bを使用し、ブラックパネル温度70℃とし温度47℃相対湿度50%で1時間照射した。取り出し後、30分以内に水の接触角を評価して超親水性の有無を評価した。水の接触角は全自動接触角計DMo―702(協和界面科学(株)製)を用い、純水を1.5μL滴下し接触角を測定した。測定は3回繰り返し平均値を照射後接触角とした。
<実施例1~3>
表2から明らかなように酸化セリウムの厚みを10~100nmの範囲とし、酸化チタンの厚みを50nmとすると、キセノン光照射後の接触角がいずれも10°以下となり、超親水性状態になっており光触媒として機能していることが分かる。
実施例1~3に比べて酸化チタンの厚みをそれぞれ20nm、200nmとしてもキセノン光照射後の接触角がいずれも10°以下となり、超親水性状態になっており光触媒として機能していることが分かる。
表面に親水保持層である酸化ケイ素層を形成してもキセノン光照射後の接触角は10°以下であり超親水性状態となっており光触媒として機能していることが分かる。
COPのガラス転移点は150℃であるが、成膜後の試料は変形など発生しておらず高温にさらされていないことが分かる。キセノン光照射後の接触角は10°以下であり超親水性状態となっており光触媒として機能していることが分かる。
ガラス基板単体ではキセノン光照射後の接触角は10°以下とはならず、光触媒性能は発現していないことが分かる。
酸化チタンのみを室温で成膜して、熱処理を施さない場合では、キセノン光照射後の接触角は10°以下とはならず、光触媒性能は発現していない。これにより、光触媒性能は酸化チタンを形成しただけでは発現しないことが明らかである。
比較例2と同じ条件で成膜したものを熱処理して、キセノン光を照射したところ接触角は10°以下となっており超親水性状態になっており光触媒性能が得られている。しかし、300℃という高温の熱処理が必要であることが明らかである。
酸化セリウムの代わりに酸化ジルコニウムを下地層とした場合、キセノン光を照射したところ接触角は10°以下となっており超親水性状態になっており光触媒性能が得られている。しかし、表1に示した通り酸化ジルコニウムの成膜速度は酸化セリウムに比べ遅く、生産性に劣っている。
成膜速度の遅さの影響を軽減する目的で酸化ジルコニウムを10nmと薄くすると、キセノン光照射後の接触角は10°以下とはならず、光触媒性能は発現していない。それに対して実施例2で示したように酸化セリウムは薄い膜厚でも光触媒性能を示しており、酸化ジルコニウムに対する優位性を示している。
酸化セリウムの代わりに酸化ハフニウムを下地層とした場合、キセノン光照射後の接触角は10°以下とはならず光触媒性能は発現していない。このことから本発明の酸化セリウムが光触媒性能を発現する下地に適していることが分かる。
Claims (8)
- 基材に対して下地層を介して光触媒層が形成された光触媒部材であって、下地層が少なくとも酸化セリウムを有し、光触媒層が少なくとも酸化チタンを有することを特徴とする、光触媒部材。
- 前記下地層は、前記酸化セリウムのみで構成されるか、または前記酸化セリウムとセリウム元素比率で10原子%以下の他の少なくとも1種類以上の元素とで構成されることを特徴とする、請求項1記載の光触媒部材。
- 前記光触媒層は、前記酸化チタンのみで構成されるか、または前記酸化チタンとチタン元素比率で10原子%以下の他の少なくとも1種類以上の元素とで構成されることを特徴とする、請求項1または2に記載の光触媒部材。
- 前記下地層の厚みが10nm以上であることを特徴とする、請求項1~3の何れか1項に記載の光触媒部材。
- 前記光触媒層の厚みが20nm以上であることを特徴とする、請求項1~4の何れか1項に記載の光触媒部材。
- 前記光触媒層の上に酸化ケイ素若しくは前記酸化ケイ素と他の金属の複合酸化物を用いた親水保持層を有することを特徴とする、請求項1~5の何れか1項に記載の光触媒部材。
- 前記基材が透明であることを特徴とする、請求項1~6の何れか1項に記載の光触媒部材。
- 前記基材が高分子フィルムであることを特徴とする、請求項1~7の何れか1項に記載の光触媒部材。
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- 2023-03-24 KR KR1020247031177A patent/KR20240148432A/ko active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| EP4501449A4 (en) | 2026-03-25 |
| EP4501449A1 (en) | 2025-02-05 |
| KR20240148432A (ko) | 2024-10-11 |
| TW202345972A (zh) | 2023-12-01 |
| US20250196104A1 (en) | 2025-06-19 |
| JP2023148631A (ja) | 2023-10-13 |
| CN118891099A (zh) | 2024-11-01 |
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