WO2024242544A1 - Multilayer filter and front end module comprising same - Google Patents

Multilayer filter and front end module comprising same Download PDF

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Publication number
WO2024242544A1
WO2024242544A1 PCT/KR2024/095838 KR2024095838W WO2024242544A1 WO 2024242544 A1 WO2024242544 A1 WO 2024242544A1 KR 2024095838 W KR2024095838 W KR 2024095838W WO 2024242544 A1 WO2024242544 A1 WO 2024242544A1
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WO
WIPO (PCT)
Prior art keywords
layer
capacitor
inductor
layers
multilayer filter
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PCT/KR2024/095838
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French (fr)
Korean (ko)
Inventor
김종민
김유선
홍철희
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Priority to CN202480034708.0A priority Critical patent/CN121195410A/en
Publication of WO2024242544A1 publication Critical patent/WO2024242544A1/en
Anticipated expiration legal-status Critical
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets

Definitions

  • the embodiment relates to a multilayer filter and a front-end module including the same.
  • Wi-Fi 6E is an extension of Wi-Fi 6 (also known as 802.11ax) that enables functionality on the 6 GHz band in addition to the currently supported 2.4 GHz and 5 GHz bands.
  • Wi-Fi 6E operates under the same Wi-Fi standard as Wi-Fi 6, but with a wider spectrum.
  • 6 GHz is a new frequency band ranging from 5.945 GHz to 7.125 GHz, allowing for up to 1,200 MHz of additional spectrum. Unlike existing frequencies where many channels are densely packed into a limited spectrum, the 6 GHz band allows networks to utilize more bandwidth, faster speeds, and lower latency without the problems of overlap and interference.
  • a front-end module is a transceiver that controls radio signals used in mobile communication terminals. It refers to a composite component in which several electronic components are implemented serially on a single substrate and the integrated space is minimized. Most of these existing front-end modules use elastic wave filters such as SAW (Surface acoustic wave) or BAW (Bulk acoustic wave) filters. As a result, the price and size of existing front-end modules have increased, and research is being conducted on this.
  • SAW Surface acoustic wave
  • BAW Bulk acoustic wave
  • the embodiment provides an inexpensive and compact multilayer filter and a front-end module including the same.
  • a multilayer filter comprises first and second ground layers; a plurality of conductive pattern layers disposed between the first ground layer and the second ground layer; and a dielectric layer disposed between the first and second ground layers and the plurality of conductive pattern layers, wherein adjacent conductive pattern layers among the plurality of conductive pattern layers include capacitance pattern layers forming a first capacitance, and at least some of the plurality of conductive pattern layers include inductance pattern layers forming an inductor, wherein the capacitance pattern layers form parasitic capacitances facing each of the first and second ground layers, and a signal having a desired frequency band can be filtered using the first capacitor, the inductor, and the parasitic capacitance.
  • the capacitance pattern layer and the inductance pattern layer may have a shape that is symmetrical with respect to an imaginary horizontal line passing through the center of the long axis of the multilayer filter and parallel to the short axis direction of the multilayer filter.
  • the plurality of conductive pattern layers may include first to third conductive pattern layers sequentially laminated between the first ground layer and the second ground layer.
  • the inductance pattern layer may include a first inductor layer disposed on the second conductive pattern layer; a second inductor layer disposed across the second conductive pattern layer and the third conductive pattern layer; a third inductor layer disposed on the first conductive pattern layer; and a fourth inductor layer disposed on the third conductive pattern layer.
  • each of the first, second, third and fourth inductor layers may have a planar shape that is folded at least once in the horizontal direction.
  • the capacitance pattern layer may include a first capacitor layer disposed on the second conductive pattern layer; and a second capacitor layer disposed on the third conductive pattern layer and facing the first capacitor layer to form the first capacitance.
  • the plurality of conductive pattern layers may further include fourth and fifth conductive pattern layers sequentially laminated between the third conductive pattern layer and the second ground layer.
  • the capacitance pattern layer may further include a third capacitor layer connected to the first capacitor layer; and a fourth capacitor layer connected to the second capacitor layer.
  • the multilayer filter may include a first via connecting the first capacitor layer and the third capacitor layer; and a second via connecting the second capacitor layer and the fourth capacitor layer.
  • the first capacitance may include an eleventh capacitance formed by opposing the first capacitor layer and the second capacitor layer; a twelfth capacitance formed by opposing the second capacitor layer and the third capacitor layer; and a thirteenth capacitance formed by opposing the third capacitor layer and the fourth capacitor layer.
  • the parasitic capacitance may include a first parasitic capacitance formed by each of the first capacitor layer and the third capacitor layer facing the first and second ground layers, respectively; and a second parasitic capacitance formed by each of the second capacitor layer and the fourth capacitor layer facing the first and second ground layers, respectively.
  • the first capacitor layer may include eleventh and twelfth capacitor layers facing each other and spaced apart in the horizontal direction by a first distance
  • the third capacitor layer may include thirty-first and 32nd capacitor layers facing each other and spaced apart in the horizontal direction by a second distance.
  • the first or second distance may be 50 ⁇ m to 300 ⁇ m.
  • the first via may include an eleventh via connecting the eleventh capacitor layer and the 31st capacitor layer; and a twelfth via connecting the twelfth capacitor layer and the 32nd capacitor layer.
  • the second capacitor layer may include a first through hole through which the eleventh via passes and is spaced apart from the eleventh via; and a second through hole through which the twelfth via passes and is spaced apart from the twelfth via.
  • the 31st and 32nd capacitor pattern layers may have a planar shape spaced apart from each other with the second via interposed therebetween.
  • the second inductor layer may include a second upper inductor layer having one end connected to the first capacitor layer and disposed on the second conductive pattern layer; and a second lower inductor layer having one end connected to the other end of the second upper inductor layer and the other end connected to the second capacitor layer and disposed on the third conductive pattern layer.
  • the multilayer filter may include a 31st via connected to one end of the 21st upper inductor layer, which is one of the 11th capacitor layer and the second upper inductor layer, and one end of the 11th inductor layer, which is one of the first inductor layers; a 32nd via connected to one end of the 22nd upper inductor layer, which is the other of the 12th capacitor layer and the second upper inductor layer, and one end of the 12th inductor layer, which is the other of the first inductor layers; a 41st via connected to the other end of the 11th inductor layer and the first port; a 42nd via connected to the other end of the 12th inductor layer and the second port; a 5th via connected to one end of the 31st inductor layer, which is one of the third inductor layers, and the first ground layer; a 61st via connected to the other end of the 21st upper inductor layer; a 62nd via connected to the other end of the 22nd upper
  • the other end of the 31st inductor layer may be connected to the 11th via
  • one end and the other end of the 32nd inductor layer, which is another of the 3rd inductor layers may be connected to the 5th via and the 12th via
  • the 21st lower inductor layer, which is one of the 2nd lower inductor layers may have one end and the other end respectively connected to the 61st via and the second capacitor layer
  • the 22nd lower inductor layer which is another of the 2nd lower inductor layers
  • the other ends of each of the 41st inductor layer and the 42nd inductor layer may be connected to the second capacitor layer.
  • a multilayer filter comprises: an eleventh inductor having one end connected to a first port; a twelfth inductor having one end connected to a second port; a 21st inductor having one end connected to the other end of the eleventh inductor; a 22nd inductor having one end connected to the other end of the 12th inductor; a 31st inductor connected between the other end of the eleventh inductor and ground; a 32nd inductor connected between the other end of the 12th inductor and the ground; a 41st inductor connected between the other end of the 21st inductor and the ground; a 42nd inductor connected between the other end of the 22nd inductor and the ground; a eleventh capacitor connected in parallel to the 21st inductor; a 12th capacitor connected in parallel to the 22nd inductor; a 21st capacitor connected in parallel to the 31st inductor; a 22nd capacitor connected in parallel to the 32nd inductor;
  • the twenty-first, twenty-second and third capacitors may be parasitic capacitances.
  • a front-end module may include: an antenna; a first amplifier for amplifying a signal received through the antenna; a multilayer filter for filtering and outputting the signal amplified by the first amplifier; a second amplifier for amplifying a signal to be transmitted through the antenna; and a switch disposed between each of an input terminal of the first amplifier and an output terminal of the second amplifier and the antenna.
  • a multilayer filter according to an embodiment and a front-end module including the same have a small size, enable easy frequency tuning, and have a configuration that allows easy increase in capacitance and inductance.
  • Figure 1 shows a cross-sectional view of a multilayer filter according to an embodiment.
  • FIG. 2 schematically illustrates a perspective view according to one embodiment of the multilayer filter illustrated in FIG. 1.
  • Figure 3 shows a circuit diagram of a multilayer filter according to one embodiment.
  • Figure 4 shows a perspective view of the exterior of a multilayer filter according to one embodiment.
  • FIG. 5a shows a perspective view of the multilayer filter illustrated in FIG. 4 with the first ground layer removed.
  • Figure 5b shows a plan view of the perspective view shown in Figure 5a.
  • Figure 6 shows a plan view of the first challenge pattern layer illustrated in Figure 5b.
  • Figure 7a shows a perspective view of Figure 5a with the first challenge pattern layer removed.
  • Figure 7b shows a plan view of the second challenge pattern layer.
  • Figure 8a shows a perspective view of Figure 7a with the second challenge pattern layer removed.
  • Figure 8b shows a plan view of the third challenge pattern layer.
  • Figure 9a shows a perspective view of Figure 8a with the third challenge pattern layer removed.
  • Figure 9b shows a plan view of the fourth challenge pattern layer.
  • Figure 10a shows a perspective view of Figure 9a with the fourth challenge pattern layer removed.
  • Figure 10b shows a plan view of the fifth challenge pattern layer.
  • Figure 11 is a cross-sectional view taken along line I-I’ of the multilayer filter illustrated in Figure 4.
  • Figure 12 is a graph examining the performance of a multilayer filter according to an embodiment.
  • Figure 13 shows a block diagram of a front-end module according to an embodiment.
  • the terms used in the embodiments of the present invention are for the purpose of describing the embodiments and are not intended to limit the present invention.
  • the singular may also include the plural unless specifically stated in the phrase, and when it is described as “A and (or) at least one (or more) of B, C,” it may include one or more of all combinations that can be combined with A, B, C.
  • a component when a component is described as being “connected,” “coupled,” or “connected” to another component, it may include not only cases where the component is directly connected, coupled, or connected to the other component, but also cases where the component is “connected,” “coupled,” or “connected” by another component between the component and the other component.
  • each component when described as being formed or arranged “above or below” each component, above or below includes not only the case where the two components are in direct contact with each other, but also the case where one or more other components are formed or arranged between the two components.
  • it when expressed as “above or below,” it can include the meaning of the downward direction as well as the upward direction based on one component.
  • multilayer filter (100, 100A) and a front-end module (200) including the same according to an embodiment will be described with reference to the attached drawings as follows.
  • the multilayer filter (100, 100A) will be described using a Cartesian coordinate system (x-axis, y-axis, z-axis), but it is obvious that the multilayer filter (100, 100A) can also be described using other coordinate systems.
  • the x-axis, the y-axis, and the z-axis are orthogonal to each other, but the embodiment is not limited thereto. That is, the x-axis, the y-axis, and the z-axis may intersect each other.
  • the x-axis direction is referred to as a ‘first direction’
  • the y-axis direction is referred to as a ‘second direction’
  • the z-axis direction is referred to as a ‘third direction’.
  • Figure 1 shows a cross-sectional view of a multilayer filter (100) according to an embodiment.
  • the multilayer filter (100) includes a plurality of layers. That is, as illustrated in FIG. 1, the multilayer filter (100) may include a first ground (or ground) layer (GL1), a second ground layer (GL2), first to Nth conductive pattern layers (TL1 to TLN), and dielectric layers (or printed circuit boards (PCBs)) (DL1 to DL(N+1)).
  • GL1 first ground (or ground) layer
  • GL2 second ground layer
  • TL1 to TLN first to Nth conductive pattern layers
  • PCBs printed circuit boards
  • the first to Nth challenge pattern layers (TL1 to TLN) can be sequentially stacked and arranged in a third direction between the first ground layer (GL1) and the second ground layer (GL2).
  • the ground connected to each of the first and second ground layers (GL1, GL2) may be an RF ground or a DC ground.
  • each of the first and second ground layers (GL1, GL2) is connected to an RF ground
  • each of the first and second ground layers (GL1, GL2) may be connected to an RF or DC ground, but the embodiment is not limited thereto.
  • the dielectric layers (DL1 to DL(N+1)) may be disposed between the first and second ground layers (GL1, GL2) and the first to Nth conductive pattern layers (TL1 to TLN). That is, the first dielectric layer (DL1) may be disposed between the first ground layer (GL1) and the first conductive pattern layer (TL1), and the N+1th dielectric layer (DL(N+1)) may be disposed between the Nth conductive pattern layer (TLN) and the second ground layer (GL2). In this way, the kth dielectric layer (DLk) may be disposed between the kth conductive pattern layer (TLk) and the k+1th conductive pattern layer (TL(k+1)). Here, 1 ⁇ k ⁇ N-1. In this way, the number of dielectric layers may be one more than the number of conductive pattern layers.
  • the first to third conductive pattern layers may be sequentially laminated between the first ground layer (GL1) and the second ground layer (GL2), and the first to fourth dielectric layers (DL1 to DL4) may be arranged between the first ground layer (GL1), the first to third conductive pattern layers (TL1 to TL3), and the second ground layer (GL2).
  • FIG. 2 schematically illustrates a perspective view of one embodiment (100A) of the multilayer filter (100) illustrated in FIG. 1.
  • first to fifth conductive pattern layers may be sequentially stacked and arranged between the first ground layer (GL1) and the second ground layer (GL2)
  • first to sixth dielectric layers may be arranged between the first ground layer (GL1), the first to fifth conductive pattern layers (TL1 to TL5), and the second ground layer (GL2), respectively.
  • Adjacent conductive pattern layers among the first to Nth conductive pattern layers may include capacitance pattern layers forming a first capacitance.
  • vertically adjacent second conductive pattern layers (TL2) and third conductive pattern layers (TL3) may each have their respective capacitor pattern layers implemented as conductors having electrical conductivity, and a third dielectric layer (DL3) made of a dielectric material may be disposed therebetween, thereby forming a first capacitance.
  • DL3 third dielectric layer
  • first to Nth conductive pattern layers may include an inductance pattern layer forming an inductor.
  • the inductance pattern layer may be implemented as a conductor.
  • each of the first to third conductive pattern layers may include an inductance pattern layer.
  • the capacitance pattern layer forming the first capacitor can form parasitic capacitances forming the second and third capacitors facing the first and second ground layers (GL1, GL2), respectively.
  • the multilayer filter (100, 100A) may be a bandpass filter that filters a signal having a desired frequency band by using a first capacitor, an inductor, and second and third capacitors.
  • the second to fifth conductive pattern layers (TL2 to TL5), excluding the first conductive pattern layer (TL1), include capacitance pattern layers, and the first, second, and third conductive pattern layers (TL1 to TL3) include inductance pattern layers.
  • Figure 3 shows a circuit diagram of a multilayer filter according to one embodiment.
  • the multilayer filter according to the embodiment illustrated in FIG. 3 is a kind of bandpass filter and includes the eleventh, twelfth, twentieth, twenty-first, twenty-second, thirty-first, thirty-second, forty-first, and forty-second inductors (L11, L12, L21, L22, L31, L32, L41, L42), and the eleventh, twelfth, twentieth, twenty-first, twenty-second, and third capacitors (C11, C12, C21, C22, C3).
  • the eleventh inductor (L11) has one end connected to the first port (P1).
  • the twelfth inductor (L12) has one end connected to the second port (P2).
  • the first port (P1) may be an input port from which a signal enters and the second port (P2) may be an output port from which a signal is output.
  • the first port (P1) may be an output port from which a signal is output and the second port (P2) may be an input port from which a signal enters.
  • the 21st inductor (L21) has one end connected to the other end of the 11th inductor (L11), and the 22nd inductor (L22) has one end connected to the other end of the 12th inductor (L12).
  • the 31st inductor (L21) can be connected between the other end of the 11th inductor (L11), that is, a point of contact between the 11th inductor (L11) and the 21st inductor (L21), and ground
  • the 32nd inductor (L32) can be connected between the other end of the 12th inductor (L12), that is, a point of contact between the 12th inductor (L12) and the 22nd inductor (L22), and ground.
  • the 41st inductor (L41) may be connected between the other terminal of the 21st inductor (L21), that is, the contact point between the 21st inductor (L21) and the 22nd inductor (L22), and the ground
  • the 42nd inductor (L42) may be connected between the other terminal of the 22nd inductor (L22), that is, the contact point between the 21st inductor (L21) and the 22nd inductor (L22), and the ground.
  • the 11th capacitor (C11) can be connected in parallel to the 21st inductor (L21), and the 12th capacitor (C12) can be connected in parallel to the 22nd inductor (L22).
  • the 21st capacitor (C21) is connected in parallel to the 31st inductor (L31), and the 22nd capacitor (C22) is connected in parallel to the 32nd inductor (L32).
  • the third capacitor (C3) is connected in parallel with the 41st and 42nd inductors (L41, L42) between the contacts of the 21st and 22nd inductors (L21, L22) and ground.
  • the 21st, 22nd and 3rd capacitors (C21, C22, C3) can be implemented as parasitic capacitances.
  • the multilayer filter according to the embodiment may have various configurations to perform the function of the bandpass filter illustrated in FIG. 3, and an example is described below with reference to FIGS. 4 to 10b, but the embodiment is not limited thereto. That is, the multilayer filter according to the embodiment may implement a filter having a circuit configuration different from the circuit configuration illustrated in FIG. 3.
  • FIG. 4 is a perspective view of an exterior of a multilayer filter according to an embodiment
  • FIG. 5a is a perspective view of the multilayer filter illustrated in FIG. 4 with the first ground layer (GL1) removed
  • FIG. 5b is a plan view of the perspective view illustrated in FIG. 5a
  • FIG. 6 is a plan view of the first conductive pattern layer (TL1) illustrated in FIG. 5b
  • FIG. 7a is a perspective view of FIG. 5a with the first conductive pattern layer (TL1) removed
  • FIG. 7b is a plan view of the second conductive pattern layer (TL2)
  • FIG. 8a is a perspective view of FIG. 7a with the second conductive pattern layer (TL2) removed
  • FIG. 8b is a plan view of the third conductive pattern layer (TL3)
  • FIG. 5a is a perspective view of the multilayer filter illustrated in FIG. 4 with the first ground layer (GL1) removed
  • FIG. 5b is a plan view of the perspective view illustrated in FIG. 5a
  • FIG. 6 is a plan
  • FIG. 9a is a perspective view of FIG. 8a with the third conductive pattern layer (TL3) removed
  • FIG. 9b is a plan view of the fourth conductive pattern layer (TL4)
  • FIG. 10a is a perspective view of FIG. 9a with the third conductive pattern layer (TL3) removed.
  • a perspective view is shown with the fourth challenge pattern layer (TL4) removed
  • FIG. 10b shows a plan view of the fifth challenge pattern layer (TL5).
  • the capacitance pattern layer and the inductance pattern layer illustrated in FIGS. 4 to 10b may have a symmetrical shape based on an imaginary horizontal line (IH) that passes through the center of the long axis (i.e., x-axis) of the multilayer filter and is parallel to the second direction, which is the short axis direction of the multilayer filter.
  • IH imaginary horizontal line
  • the inductance pattern layer may include a first inductor layer (LP11, LP12), a second inductor layer (LP2U1, LP2U2, LP2L1, LP2L2), a third inductor layer (LP31, LP32), and a fourth inductor layer (LP41, LP42).
  • the first inductor layer (LP11, LP12) is a layer that implements the 11th and 12th inductors (L11, L12) respectively illustrated in FIG. 3, and can be placed on the second conductive pattern layer (TL2) as illustrated in FIGS. 7a and 7b.
  • the second inductor layer can be arranged across the second conductive pattern layer (TL2) and the third conductive pattern layer (TL3). That is, the second inductor layer includes a second upper inductor layer arranged on the second conductive pattern layer (TL2) and having one end connected to the first capacitor layers (CP11, CP12) as illustrated in FIG. 7b, and a second lower inductor layer arranged on the third conductive pattern layer (TL3) and having one end each connected to the other end of the second upper inductor layer and the other end connected to the second capacitor layer (CP2) as illustrated in FIG. 8b.
  • the second upper inductor layer includes the twenty-first upper inductor layer (LP2U1) and the twenty-second upper inductor layer (LP2U2)
  • the second lower inductor layer includes the twenty-first lower inductor layer (LP2L1) and the twenty-second lower inductor layer (LP2L2).
  • the 21st upper inductor layer (LP2U1) and the 21st lower inductor layer (LP2L1) implement the 21st inductor (L21) illustrated in FIG. 3, and the 22nd upper inductor layer (LP2U2) and the 22nd lower inductor layer (LP2L2) implement the 22nd inductor (L22) illustrated in FIG. 3.
  • the third inductor layer (LP31, LP32) is a layer that implements the 31st and 32nd inductors (L31, L32) illustrated in FIG. 3, respectively, and can be placed on the first conductive pattern layer (TL1) as illustrated in FIG. 5a and FIG. 6.
  • the fourth inductor layer (LP41, LP42) is a layer that implements the 41st and 42nd inductors (L41, L42) illustrated in FIG. 3, respectively, and can be placed on the third conductive pattern layer (TL3) as illustrated in FIGS. 8a and 8b.
  • each of the first, second, third and fourth inductor layers may have a planar shape folded at least once in the horizontal direction.
  • each of the second upper inductor layers (LP2U1, LP2U2), the second lower inductor layers (LP2L1, LP2L2) and the fourth inductor layer (LP41, LP42) may have a planar shape folded once in the horizontal direction
  • the third inductor layer (LP31, LP32) may have a planar shape folded twice in the horizontal direction.
  • the capacitance pattern layer may include a first capacitor layer (CP11, CP12), a second capacitor layer (CP2), a third capacitor layer (CP31, CP32), and a fourth capacitor layer (CP4).
  • CP11, CP12 a first capacitor layer
  • CP2 a second capacitor layer
  • CP31, CP32 a third capacitor layer
  • CP4 a fourth capacitor layer
  • the first capacitor layer having the first capacitance may be arranged on the second conductive pattern layer (TL2) as illustrated in FIGS. 7a and 7b, and may include eleventh and twelfth capacitor layers (CP11, CP12) facing each other and spaced apart from each other by a first distance (X1) in the first direction, which is the horizontal direction.
  • CP11, CP12 eleventh and twelfth capacitor layers facing each other and spaced apart from each other by a first distance (X1) in the first direction, which is the horizontal direction.
  • a second capacitor layer (CP2) having a second capacitance can be arranged on the third conductive pattern layer (TL3), as illustrated in FIGS. 8a and 8b.
  • the third capacitor layer having the third capacitance may be arranged on the fourth conductive pattern layer (TL4) as illustrated in FIGS. 9a and 9b, and may include 31st and 32nd capacitor layers (CP31, CP32) facing each other and spaced apart from each other by a second distance (X2) in the first direction, which is the horizontal direction.
  • each of the first and second distances (X1, X2) may be 50 ⁇ m to 300 ⁇ m, but the embodiment is not limited thereto.
  • a fourth capacitor layer (CP4) having a fourth capacitance can be arranged on the fifth conductive pattern layer (TL5) as illustrated in FIGS. 10a and 10b.
  • the first capacitor layer (CP11, CP12) and the third capacitor layer (CP31, CP32) may be connected to each other, and the second capacitor layer (CP2) and the fourth capacitor layer (CP4) may be electrically connected to each other. That is, the eleventh capacitor layer (CP11) may be electrically connected to the 31st capacitor layer (CP31), and the twelfth capacitor layer (CP12) may be electrically connected to the 32nd capacitor layer (CP32).
  • the multilayer filter may include first and second vias.
  • the first via connects the first capacitor layer (CP11, CP12) and the third capacitor layer (CP31, CP32), and the second via (VA2) connects the second capacitor layer (CP2) and the fourth capacitor layer (CP4).
  • the first via may include an eleventh via (VA11) and a twelfth via (VA12).
  • the 11th via (VA11) electrically connects the 11th capacitor layer (CP11) and the 31st capacitor layer (CP31), and the 12th via (VA12) electrically connects the 12th capacitor layer (CP12) and the 32nd capacitor layer (CP32).
  • the eleventh and twelfth vias (VA11, VA12) penetrate the second capacitor layer (CP2), and the second capacitor layer (CP2) may include first and second through-holes (TH1, TH2) as illustrated in FIG. 8B.
  • the eleventh via (VA11) may penetrate the first through-hole (TH1)
  • the twelfth via (VA12) may penetrate the second through-hole (TH2).
  • the diameter of the first through-hole (TH1) may be formed larger than the diameter of the eleventh via (VA11)
  • the diameter of the second through-hole (TH2) may be formed larger than the diameter of the twelfth via (VA12).
  • the 31st and 32nd capacitor pattern layers may have a planar shape in which they are spaced apart from each other with the second via (VA2) interposed therebetween. Accordingly, the 31st and 32nd capacitor pattern layers (CP31, CP32) may be electrically spaced apart from the second via (VA2).
  • inductance pattern layer and capacitance pattern layer can be connected to each other in the vertical and horizontal directions by vias to implement the circuit illustrated in FIG. 3.
  • the multilayer filter according to the embodiment may include the 31st, 32nd, 41st, 42nd, 5th, 61st, 62nd, 71st, and 72nd vias (VA31, VA32, VA41, VA42, VA5, VA61, VA62, VA71, VA72).
  • the 31st via (VA31) is connected to one end of the 11th capacitor layer (CP11) and the 21st upper inductor layer (LP2U1) and one end of the 11th inductor layer (LP11), and is not connected to the first and second ground layers (GL1, GL2).
  • the 32nd via (VA32) is connected to one end of the 12th capacitor layer (CP12) and the 22nd upper inductor layer (LP2U2) and one end of the 12th inductor layer (LP12), and is not connected to the first and second ground layers (GL1, GL2).
  • the 41st via (VA41) is connected to the other end of the 11th inductor layer (LP11) and the first port (P1)
  • the 42nd via (VA42) is connected to the other end of the 12th inductor layer (LP12) and the second port (P2).
  • the 41st and 42nd vias (VA41, VA42) are not connected to the first and second ground layers (GL1, GL2).
  • the fifth via (VA5) connects one end of each of the 31st inductor layer (LP31) and the 32nd inductor layer (LP32) to the first ground layer (GL1).
  • the other end of the 31st inductor layer (LP31) can be connected to the 11th via (VA11), and the other end of the 32nd inductor layer (LP32) can be connected to the 12th via (VA12).
  • the 61st via (VA61) is connected to the other end of the 21st upper inductor layer (LP2U1) and one end of the 21st lower inductor layer (LP2L1), respectively, and the 62nd via (VA62) is connected to the other end of the 22nd upper inductor layer (LP2U2) and one end of the 22nd lower inductor layer (LP2L2), respectively.
  • the 61st and 62nd vias (VA61, VA62) are not connected to the first and second ground layers (GL1, GL2).
  • the other end of the 21st lower inductor layer (LP2L1) is connected to the second capacitor layer (CP2), and the other end of the 22nd lower inductor layer (LP2L2) is also connected to the second capacitor layer (CP2).
  • the 71st via (VA71) is connected to one end of the 41st inductor layer (LP41) and the second ground layer (GL2), respectively, and the 72nd via (VA71) is connected to one end of the 42nd inductor layer (LP42) and the second ground layer (GL2), respectively.
  • each of the 41st inductor layer (LP41) and the 42nd inductor layer (LP42) is connected to the second capacitor layer (CP2).
  • the multilayer filter according to the embodiment may further include an eighth via.
  • the eighth via serves to connect the first ground layer (GL1) and the second ground layer (GL2).
  • the eighth via may include ten eighth vias (VA81 to VA810), but the embodiment is not limited to a specific number of the eighth vias.
  • the multilayer filter according to the embodiment may further include a ninth via (VA91, VA92) as illustrated in FIGS. 5b, 7b, 8b, and 9b, respectively.
  • the ninth via (VA91, VA92) serves to connect the second to fourth conductive pattern layers (TL2, TL3, TL4) to each other, and as illustrated in FIGS. 5a, 7a, 8a, and 9a, the ninth via (VA91, VA92) may be omitted.
  • FIG. 11 is a cross-sectional view taken along line I-I’ of the multilayer filter illustrated in FIG. 4, showing only the first and second ground layers (GL1, GL2) and the first to third capacitor layers (CP11, CP12, CP2, CP3).
  • the first capacitance of each of the eleventh and twelfth capacitors may include the eleventh, twelfth, and thirteenth capacitances.
  • the 11th capacitance is formed by opposing the first capacitor layer (CP11, CP12) and the second capacitor layer (CP2)
  • the 12th capacitance is formed by opposing the second capacitor layer (CP2) and the third capacitor layer (CP31, CP32)
  • the 13th capacitance is formed by opposing the third capacitor layer (CP31, CP32) and the fourth capacitor layer (CP4).
  • the aforementioned capacitance pattern layer can implement the capacitors (C11, C12, C21, C22, C3) illustrated in FIG. 3 as follows.
  • the capacitance of the 11th capacitor (C11) illustrated in FIG. 3 is a result of synthesizing the 11th capacitance formed by opposing the 11th capacitor layer (CP11) and the 2nd capacitor layer (CP2) spaced apart by a distance (Z111), the 12th capacitance formed by opposing the 2nd capacitor layer (CP2) and the 31st capacitor layer (CP31) spaced apart by a distance (Z112), and the 13th capacitance formed by opposing the 31st capacitor layer (CP31) and the 4th capacitor layer (CP4) spaced apart by a distance (Z113).
  • the capacitance of the 12th capacitor (C12) is a result of synthesizing the 11th capacitance formed by opposing the 12th capacitor layer (CP12) and the 2nd capacitor layer (CP2) spaced apart by a distance (Z121), the 12th capacitance formed by opposing the 2nd capacitor layer (CP2) and the 32nd capacitor layer (CP32) spaced apart by a distance (Z122), and the 13th capacitance formed by opposing the 32nd capacitor layer (CP32) and the 4th capacitor layer (CP4) spaced apart by a distance (Z123).
  • the second and third capacitances may correspond to parasitic capacitances.
  • the capacitance of the 21st capacitor (C21) is a result of synthesizing the parasitic capacitance caused between the 11th capacitor layer (CP11) and the first ground layer (GL1) spaced apart by a distance (Z211), the parasitic capacitance caused between the 11th capacitor layer (CP11) and the second ground layer (GL2) spaced apart by a distance (Z212), the parasitic capacitance caused between the 31st capacitor layer (CP31) and the first ground layer (GL1) spaced apart by a distance (Z213), and the parasitic capacitance caused between the 31st capacitor layer (CP31) and the second ground layer (GL2) spaced apart by a distance (Z214).
  • the capacitance of the 22nd capacitor (C22) is a result of synthesizing the parasitic capacitance caused between the 12th capacitor layer (CP12) and the first ground layer (GL1) spaced apart by a distance (Z221), the parasitic capacitance caused between the 12th capacitor layer (CP12) and the second ground layer (GL2) spaced apart by a distance (Z222), the parasitic capacitance caused between the 32nd capacitor layer (CP32) and the first ground layer (GL1) spaced apart by a distance (Z223), and the parasitic capacitance caused between the 32nd capacitor layer (CP32) and the second ground layer (GL2) spaced apart by a distance (Z224).
  • the capacitance of the third capacitor (C3) is a result of the synthesis of the parasitic capacitance between the second capacitor layer (CP2) and the first ground layer (GL1) spaced apart by a distance (Z31), the parasitic capacitance between the second capacitor layer (CP2) and the second ground layer (GL2) spaced apart by a distance (Z32), the parasitic capacitance between the second capacitor layer (CP2) and the first ground layer (GL1) spaced apart by a distance (Z33), and the parasitic capacitance between the fourth capacitor layer (CP2) and the second ground layer (GL2) spaced apart by a distance (Z34).
  • the ground layers (GL1, GL2) and capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) that are vertically adjacent to each other can be vertically overlapped as much as desired, and the permittivity of the dielectric layer arranged between the ground layers (GL1, GL2) and the capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) can be adjusted, and the area of the capacitor layers that form the capacitance facing each other can be adjusted.
  • the length of the second inductors (L21, L22) can be increased so that they have a desired inductance.
  • the capacitors can have a structure in which they are connected in parallel, thereby increasing the first capacitance as much as desired.
  • the fourth and fifth conductive pattern layers (TL3, TL4) and the eleventh and twelfth and second vias (VA11, VA12, VA2) may be omitted as in other embodiments.
  • Figure 12 is a graph that examines the performance of a multilayer filter according to an embodiment, in which the horizontal axis represents frequency and the vertical axis represents S parameters, respectively.
  • Fig. 12 shows the simulation result of applying a multilayer filter according to an embodiment to WiFi 6E having a passband of 5.925GHz to 7.125GHz, and the insertion loss is -5dB or less.
  • the 21st and 22nd inductors (L21, L22) and the 11th and 12th capacitors (C11, C12) illustrated in Fig. 3 serve to create a transmission zero.
  • two transmission zeros can be created in the ‘A’ portion of the transmission zero (310).
  • the transmission zeros are overlapped and illustrated as one.
  • the 31st and 32nd inductors (L31, L32), the 41st and 42nd inductors (L41, L42), the 21st capacitor (C21), the 22nd capacitor (C22), and the third capacitor (C3) illustrated in Fig. 3 serve to create a resonator.
  • the multilayer filter has the characteristics of a third-order resonator (320) having three resonances, as in part ‘B’.
  • Figure 13 shows a block diagram of a front-end module (200) according to an embodiment.
  • the front-end module (200) may include an antenna (210), first and second amplifiers (220, 240), a multilayer filter (220), and a switch (250).
  • the first amplifier (220) can amplify a signal received through the antenna (210) and provide the amplified result to the multilayer filter (220).
  • the first amplifier (220) can be a low noise amplifier (LNA).
  • the multilayer filter (220) filters the signal amplified by the first amplifier (220) and outputs it through the output terminal OUT. Since it may be the multilayer filter (100, 100A) according to the above-described embodiment, a duplicate description is omitted.
  • the second amplifier (240) amplifies a signal coming in through the input terminal IN and transmits the amplified result through the antenna (210).
  • the second amplifier (240) may be a power amplifier (PA).
  • a switch (250) is placed between the input terminal of the first amplifier (220) and the output terminal of the second amplifier (240) and the antenna, and serves to select their signal paths.
  • a multilayer filter (100, 100A) is embedded inside a front-end module using LCiP (Inductance & Capacitance in Package) technology
  • the second capacitor (C21, C22) and the third capacitance (C3) which are shunt capacitors, are implemented as parasitic capacitances between the 11th, 12th, 2nd, 31st, 32nd, and 4th capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) and the first and second ground layers (GL1, GL2) as described above
  • CP11, CP12, CP2, CP31, CP32, CP4 the first and second ground layers
  • the 11th, 12th, 2nd, 31st, 32nd, and 4th capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) are arranged, and the capacitances of the 21st, 22nd, and 3rd capacitors (C21, C22, C3) can be formed by utilizing the parasitic capacitances between the 11th, 12th, 2nd, 31st, 32nd, and 4th capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) and the first and second ground layers (GL1, GL2).
  • the parasitic capacitors can be utilized without requiring separate capacitor layers for forming the capacitances of the 21st, 22nd, and 3rd capacitors (C21, C22, C3). Thanks to this, the size of the multilayer filter (100, 100A) or front-end module (200) can be reduced, and the frequency can be easily tuned.
  • the capacitance e.g., first capacitance
  • the capacitance can be easily increased in a limited size.
  • the inductance e.g., the inductance of the second inductor
  • the multilayer filter and front-end module according to the above-described embodiment can be applied to a field having a frequency band of 6 GHz or higher, and for example, can be applied to modules for antennas including televisions, mobile devices, Bluetooth, and WiFi.
  • the multilayer filter of the embodiment and the front-end module including the same can be used in a mobile communication terminal, etc.

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Abstract

A multilayer filter of an embodiment comprises: first and second ground layers; a plurality of conductive pattern layers disposed between the first ground layer and the second ground layer; and a dielectric layer disposed between the first and second ground layers and the plurality of conductive pattern layers, wherein adjacent conductive pattern layers among the plurality of conductive pattern layers include capacitance pattern layers forming a first capacitance, and at least some of the plurality of conductive pattern layers include an inductance pattern layer forming an inductor, wherein the capacitance pattern layers face each of the first and second ground layers to form parasitic capacitance, and filter a signal having a desired frequency band by using the first capacitor, the inductor, and the parasitic capacitance.

Description

다층 필터 및 이를 포함하는 프론트 엔드 모듈Multilayer filter and front-end module including same

실시 예는 다층 필터 및 이를 포함하는 프론트 엔드 모듈에 관한 것이다.The embodiment relates to a multilayer filter and a front-end module including the same.

와이파이(Wi-Fi) 6E는 현재 지원되는 2.4㎓ 및 5㎓ 대역 외에도 6㎓ 대역에 기능을 사용할 수 있도록 하는 Wi-Fi 6(802.11ax라고도 함)의 차기 확장 표준이다. Wi-Fi 6E는 Wi-Fi 6과 동일한 Wi-Fi 표준으로 작동하지만, 스펙트럼이 더욱 확장되었다. 6㎓는 5.945㎓ 내지 7.125㎓ 범위의 새로운 주파수 대역으로 최대 1,200㎒의 추가 스펙트럼을 허용한다. 제한된 스펙트럼에 많은 채널이 밀집된 기존 주파수와 다르게, 6㎓ 대역은 오버랩과 혼선의 문제가 생기지 않으며 더 큰 대역폭, 더 빠른 속도와 낮은 지연 시간으로 네트워크를 이용할 수 있다.Wi-Fi 6E is an extension of Wi-Fi 6 (also known as 802.11ax) that enables functionality on the 6 GHz band in addition to the currently supported 2.4 GHz and 5 GHz bands. Wi-Fi 6E operates under the same Wi-Fi standard as Wi-Fi 6, but with a wider spectrum. 6 GHz is a new frequency band ranging from 5.945 GHz to 7.125 GHz, allowing for up to 1,200 MHz of additional spectrum. Unlike existing frequencies where many channels are densely packed into a limited spectrum, the 6 GHz band allows networks to utilize more bandwidth, faster speeds, and lower latency without the problems of overlap and interference.

그러나, 주파수가 커질수록 전파의 직진성이 높아짐으로 인해, 전파되는 신호의 레벨 감쇄가 커지고, 이는 데이터 처리율(throughput)의 감소를 야기한다. 이를 보완하기 위해, 주파수 대역을 구분하기 위해 프론트 엔드 모듈(Front end module)이 요구된다.However, as the frequency increases, the directivity of the radio wave increases, which increases the level attenuation of the propagated signal, which causes a decrease in the data processing rate (throughput). To compensate for this, a front end module is required to distinguish the frequency band.

프론트 엔드 모듈(FEM; Front End Module)이란 이동통신단말기 상에 사용되는 전파 신호를 제어하는 송수신 장치로서, 여러 가지 전자 부품이 하나의 기판 상에 일련적으로 구현되어 그 집적 공간이 최소화된 복합 부품을 의미한다. 이러한 기존의 프론트 엔드 모듈은 대부분 SAW(Surface acoustic wave) 또는 BAW(Bulk acoustic wave) 필터 등과 같은 탄성파 필터를 사용한다. 이로 인해, 기존의 프론트 엔드 모듈의 가격과 크기가 증가하여 이에 대한 연구가 진행되고 있다.A front-end module (FEM) is a transceiver that controls radio signals used in mobile communication terminals. It refers to a composite component in which several electronic components are implemented serially on a single substrate and the integrated space is minimized. Most of these existing front-end modules use elastic wave filters such as SAW (Surface acoustic wave) or BAW (Bulk acoustic wave) filters. As a result, the price and size of existing front-end modules have increased, and research is being conducted on this.

실시 예는 저렴하고 크기가 작은 다층 필터 및 이를 포함하는 프론트 엔드 모듈을 제공한다.The embodiment provides an inexpensive and compact multilayer filter and a front-end module including the same.

일 실시 예에 의한 다층 필터는, 제1 및 제2 그라운드층; 상기 제1 그라운드층과 상기 제2 그라운드층 사이에 배치된 복수의 도전 패턴층; 및 상기 제1 및 제2 그라운드층과 상기 복수의 도전 패턴층 사이에 배치된 유전층을 포함하고, 상기 복수의 도전 패턴층 중 인접하는 도전 패턴층은 제1 커패시턴스를 형성하는 커패시턴스 패턴층을 포함하고, 상기 복수의 도전 패턴층 중 적어도 일부는 인덕터를 형성하는 인덕턴스 패턴층을 포함하고, 상기 커패시턴스 패턴층은 상기 제1 및 제2 그라운드층 각각과 대향하여 기생 커패시턴스를 형성하고, 상기 제1 커패시터와 상기 인덕터와 상기 기생 커패시턴스를 이용하여 소망하는 주파수 대역을 갖는 신호를 필터링할 수 있다.According to one embodiment, a multilayer filter comprises first and second ground layers; a plurality of conductive pattern layers disposed between the first ground layer and the second ground layer; and a dielectric layer disposed between the first and second ground layers and the plurality of conductive pattern layers, wherein adjacent conductive pattern layers among the plurality of conductive pattern layers include capacitance pattern layers forming a first capacitance, and at least some of the plurality of conductive pattern layers include inductance pattern layers forming an inductor, wherein the capacitance pattern layers form parasitic capacitances facing each of the first and second ground layers, and a signal having a desired frequency band can be filtered using the first capacitor, the inductor, and the parasitic capacitance.

예를 들어, 상기 커패시턴스 패턴층과 상기 인덕턴스 패턴층은 상기 다층 필터의 장축의 중심을 지나며 상기 다층 필터의 단축 방향과 나란한 가상의 수평선을 기준으로 대칭인 형상을 가질 수 있다.For example, the capacitance pattern layer and the inductance pattern layer may have a shape that is symmetrical with respect to an imaginary horizontal line passing through the center of the long axis of the multilayer filter and parallel to the short axis direction of the multilayer filter.

예를 들어, 상기 복수의 도전 패턴층은 상기 제1 그라운드층과 상기 제2 그라운드층 사이에서 순차적으로 적층된 제1 내지 제3 도전 패턴층을 포함할 수 있다.For example, the plurality of conductive pattern layers may include first to third conductive pattern layers sequentially laminated between the first ground layer and the second ground layer.

예를 들어, 상기 인덕턴스 패턴층은 상기 제2 도전 패턴층에 배치된 제1 인덕터층; 상기 제2 도전 패턴층과 상기 제3 도전 패턴층에 걸쳐서 배치된 제2 인덕터층; 상기 제1 도전 패턴층에 배치된 제3 인덕터층; 및 상기 제3 도전 패턴층에 배치된 제4 인덕터층을 포함할 수 있다.For example, the inductance pattern layer may include a first inductor layer disposed on the second conductive pattern layer; a second inductor layer disposed across the second conductive pattern layer and the third conductive pattern layer; a third inductor layer disposed on the first conductive pattern layer; and a fourth inductor layer disposed on the third conductive pattern layer.

예를 들어, 상기 제1, 제2, 제3 및 제4 인덕터층 각각은 수평 방향으로 적어도 한 번 절곡된 평면 형상을 가질 수 있다.For example, each of the first, second, third and fourth inductor layers may have a planar shape that is folded at least once in the horizontal direction.

예를 들어, 상기 커패시턴스 패턴층은 상기 제2 도전 패턴층에 배치된 제1 커패시터층; 및 상기 제3 도전 패턴층에 배치되고, 상기 제1 커패시터층과 대향하여 상기 제1 커패시턴스를 형성하는 제2 커패시터층을 포함할 수 있다.For example, the capacitance pattern layer may include a first capacitor layer disposed on the second conductive pattern layer; and a second capacitor layer disposed on the third conductive pattern layer and facing the first capacitor layer to form the first capacitance.

예를 들어, 상기 복수의 도전 패턴층은 상기 제3 도전 패턴층과 상기 제2 그라운드층 사이에서 순차적으로 적층된 제4 및 제5 도전 패턴층을 더 포함할 수 있다.For example, the plurality of conductive pattern layers may further include fourth and fifth conductive pattern layers sequentially laminated between the third conductive pattern layer and the second ground layer.

예를 들어, 상기 커패시턴스 패턴층은 상기 제1 커패시터층과 연결된 제3 커패시터층; 및 상기 제2 커패시터층과 연결된 제4 커패시터층을 더 포함할 수 있다.For example, the capacitance pattern layer may further include a third capacitor layer connected to the first capacitor layer; and a fourth capacitor layer connected to the second capacitor layer.

예를 들어, 상기 다층 필터는 상기 제1 커패시터층과 상기 제3 커패시터층을 연결하는 제1 비아; 및 상기 제2 커패시터층과 상기 제4 커패시터층을 연결하는 제2 비아를 포함할 수 있다.For example, the multilayer filter may include a first via connecting the first capacitor layer and the third capacitor layer; and a second via connecting the second capacitor layer and the fourth capacitor layer.

예를 들어, 상기 제1 커패시턴스는 상기 제1 커패시터층과 상기 제2 커패시터층이 대향하여 형성된 제11 커패시턴스; 상기 제2 커패시터층과 상기 제3 커패시터층이 대향하여 형성된 제12 커패시턴스; 및 상기 제3 커패시터층과 상기 제4 커패시터층이 대향하여 형성된 제13 커패시턴스를 포함할 수 있다.For example, the first capacitance may include an eleventh capacitance formed by opposing the first capacitor layer and the second capacitor layer; a twelfth capacitance formed by opposing the second capacitor layer and the third capacitor layer; and a thirteenth capacitance formed by opposing the third capacitor layer and the fourth capacitor layer.

예를 들어, 상기 기생 커패시턴스는 상기 제1 커패시터층과 상기 제3 커패시터층 각각이 상기 제1 및 제2 그라운드층과 각각 대향하여 형성된 제1 기생 커패시턴스; 및 상기 제2 커패시터층과 상기 제4 커패시터층 각각이 상기 제1 및 제2 그라운드층과 각각 대향하여 형성된 제2 기생 커패시턴스를 포함할 수 있다.For example, the parasitic capacitance may include a first parasitic capacitance formed by each of the first capacitor layer and the third capacitor layer facing the first and second ground layers, respectively; and a second parasitic capacitance formed by each of the second capacitor layer and the fourth capacitor layer facing the first and second ground layers, respectively.

예를 들어, 상기 제1 커패시터층은 수평 방향으로 제1 거리만큼 이격되어 서로 대면하는 제11 및 제12 커패시터층을 포함하고, 상기 제3 커패시터층은 상기 수평 방향으로 제2 거리만큼 이격되어 서로 대면하는 제31 및 제32 커패시터층을 포함할 수 있다.For example, the first capacitor layer may include eleventh and twelfth capacitor layers facing each other and spaced apart in the horizontal direction by a first distance, and the third capacitor layer may include thirty-first and 32nd capacitor layers facing each other and spaced apart in the horizontal direction by a second distance.

예를 들어, 상기 제1 또는 제2 거리는 50㎛ 내지 300㎛일 수 있다.For example, the first or second distance may be 50 μm to 300 μm.

예를 들어, 상기 제1 비아는 상기 제11 커패시터층과 상기 제31 커패시터층을 연결하는 제11 비아; 및 상기 제12 커패시터층과 상기 제32 커패시터층을 연결하는 제12 비아를 포함할 수 있다.For example, the first via may include an eleventh via connecting the eleventh capacitor layer and the 31st capacitor layer; and a twelfth via connecting the twelfth capacitor layer and the 32nd capacitor layer.

예를 들어, 상기 제2 커패시터층은 상기 제11 비아가 관통하며, 상기 제11 비아와 이격된 제1 관통홀; 및 상기 제12 비아가 관통하며, 상기 제12 비아와 이격된 제2 관통홀을 포함할 수 있다.For example, the second capacitor layer may include a first through hole through which the eleventh via passes and is spaced apart from the eleventh via; and a second through hole through which the twelfth via passes and is spaced apart from the twelfth via.

예를 들어, 상기 제31 및 제32 커패시터 패턴층은 상기 제2 비아를 사이에 두고 서로 이격되어 배치된 평면 형상을 가질 수 있다.For example, the 31st and 32nd capacitor pattern layers may have a planar shape spaced apart from each other with the second via interposed therebetween.

예를 들어, 상기 제2 인덕터층은 상기 제1 커패시터층과 연결된 일단을 갖고, 상기 제2 도전 패턴층에 배치된 제2 상측 인덕터층; 및 상기 제2 상측 인덕터층의 타단과 연결된 일단과 상기 제2 커패시터층과 연결된 타단을 갖고, 상기 제3 도전 패턴층에 배치된 제2 하측 인덕터층을 포함할 수 있다.For example, the second inductor layer may include a second upper inductor layer having one end connected to the first capacitor layer and disposed on the second conductive pattern layer; and a second lower inductor layer having one end connected to the other end of the second upper inductor layer and the other end connected to the second capacitor layer and disposed on the third conductive pattern layer.

예를 들어, 상기 다층 필터는, 상기 제11 커패시터층과 상기 제2 상측 인덕터층 중 하나인 제21 상측 인덕터층의 상기 일단과 상기 제1 인덕터층 중 하나인 제11 인덕터층의 일단과 연결된 제31 비아; 상기 제12 커패시터층과 상기 제2 상측 인덕터층 중 다른 하나인 제22 상측 인덕터층의 상기 일단과 상기 제1 인덕터층 중 다른 하나인 제12 인덕터층의 일단과 연결된 제32 비아; 상기 제11 인덕터층의 타단 및 제1 포트와 연결된 제41 비아; 상기 제12 인덕터층의 타단 및 제2 포트와 연결된 제42 비아; 상기 제3 인덕터층 중 하나인 제31 인덕터층의 일단과 상기 제1 그라운드층을 연결하는 제5 비아; 상기 제21 상측 인덕터층의 타단과 연결된 제61 비아; 상기 제22 상측 인덕터층의 타단과 연결된 제62 비아; 상기 제4 인덕터층 중 하나인 제41 인덕터층의 일단과 연결된 제71 비아; 상기 제4 인덕터층 중 다른 하나인 제42 인덕터층의 일단과 연결된 제72 비아; 및 상기 제1 그라운드층과 상기 제2 그라운드층을 연결하는 적어도 하나의 제8 비아를 포함할 수 있다.For example, the multilayer filter may include a 31st via connected to one end of the 21st upper inductor layer, which is one of the 11th capacitor layer and the second upper inductor layer, and one end of the 11th inductor layer, which is one of the first inductor layers; a 32nd via connected to one end of the 22nd upper inductor layer, which is the other of the 12th capacitor layer and the second upper inductor layer, and one end of the 12th inductor layer, which is the other of the first inductor layers; a 41st via connected to the other end of the 11th inductor layer and the first port; a 42nd via connected to the other end of the 12th inductor layer and the second port; a 5th via connected to one end of the 31st inductor layer, which is one of the third inductor layers, and the first ground layer; a 61st via connected to the other end of the 21st upper inductor layer; a 62nd via connected to the other end of the 22nd upper inductor layer; It may include a 71st via connected to one end of a 41st inductor layer, which is one of the fourth inductor layers; a 72nd via connected to one end of a 42nd inductor layer, which is another of the fourth inductor layers; and at least one 8th via connecting the first ground layer and the second ground layer.

예를 들어, 상기 제31 인덕터층의 타단은 상기 제11 비아와 연결되고, 상기 제3 인덕터층 중 다른 하나인 제32 인덕터층의 일단과 타단은 상기 제5 비아 및 제12 비아에 각각 연결되고, 상기 제2 하측 인덕터층 중 하나인 제21 하측 인덕터층은 상기 제61 비아 및 상기 제2 커패시터층에 각각 연결된 일단과 타단을 갖고, 상기 제2 하측 인덕터층 중 다른 하나인 제22 하측 인덕터층은 상기 제62 비아 및 상기 제2 커패시터층에 각각 연결된 일단과 타단을 갖고, 상기 제41 인덕터층 및 상기 제42 인덕터층 각각의 타단은 상기 제2 커패시터층과 연결될 수 있다.For example, the other end of the 31st inductor layer may be connected to the 11th via, one end and the other end of the 32nd inductor layer, which is another of the 3rd inductor layers, may be connected to the 5th via and the 12th via, respectively, the 21st lower inductor layer, which is one of the 2nd lower inductor layers, may have one end and the other end respectively connected to the 61st via and the second capacitor layer, the 22nd lower inductor layer, which is another of the 2nd lower inductor layers, may have one end and the other end respectively connected to the 62nd via and the second capacitor layer, and the other ends of each of the 41st inductor layer and the 42nd inductor layer may be connected to the second capacitor layer.

다른 실시 예에 의한 다층 필터는, 제1 포트와 연결된 일단을 갖는 제11 인덕터; 제2 포트와 연결된 일단을 갖는 제12 인덕터; 상기 제11 인덕터의 타단과 연결된 일단을 갖는 제21 인덕터; 상기 제12 인덕터의 타단과 연결된 일단을 갖는 제22 인덕터; 제11 인덕터의 상기 타단과 접지 사이에 연결된 제31 인덕터; 제12 인덕터의 상기 타단과 상기 접지 사이에 연결된 제32 인덕터; 상기 제21 인덕터의 타단과 상기 접지 사이에 연결된 제41 인덕터; 상기 제22 인덕터의 타단과 상기 접지 사이에 연결된 제42 인덕터; 상기 제21 인덕터에 병렬 연결된 제11 커패시터; 상기 제22 인덕터에 병렬 연결된 제12 커패시터; 상기 제31 인덕터에 병렬 연결된 제21 커패시터; 상기 제32 인덕터에 병렬 연결된 제22 커패시터; 및 상기 제21 인덕터와 제22 인덕터의 접점과 상기 접지 사이에서 상기 제41 및 제42 인덕터와 병렬 연결된 제3 커패시터를 포함할 수 있다.In another embodiment, a multilayer filter comprises: an eleventh inductor having one end connected to a first port; a twelfth inductor having one end connected to a second port; a 21st inductor having one end connected to the other end of the eleventh inductor; a 22nd inductor having one end connected to the other end of the 12th inductor; a 31st inductor connected between the other end of the eleventh inductor and ground; a 32nd inductor connected between the other end of the 12th inductor and the ground; a 41st inductor connected between the other end of the 21st inductor and the ground; a 42nd inductor connected between the other end of the 22nd inductor and the ground; a eleventh capacitor connected in parallel to the 21st inductor; a 12th capacitor connected in parallel to the 22nd inductor; a 21st capacitor connected in parallel to the 31st inductor; a 22nd capacitor connected in parallel to the 32nd inductor; And it may include a third capacitor connected in parallel with the 41st and 42nd inductors between the contact points of the 21st and 22nd inductors and the ground.

예를 들어, 상기 제21, 제22 및 제3 커패시터는 기생 커패시턴스일 수 있다.For example, the twenty-first, twenty-second and third capacitors may be parasitic capacitances.

또 다른 실시 예에 의한 프론트 엔드 모듈은, 안테나; 상기 안테나를 통해 수신된 신호를 증폭시키는 제1 증폭기; 상기 제1 증폭기에서 증폭된 신호를 필터링하여 출력하는 다층 필터; 상기 안테나를 통해 전송할 신호를 증폭시키는 제2 증폭기; 및 상기 제1 증폭기의 입력단 및 상기 제2 증폭기의 출력단 각각과 상기 안테나 사이에 배치된 스위치를 포함할 수 있다.A front-end module according to another embodiment may include: an antenna; a first amplifier for amplifying a signal received through the antenna; a multilayer filter for filtering and outputting the signal amplified by the first amplifier; a second amplifier for amplifying a signal to be transmitted through the antenna; and a switch disposed between each of an input terminal of the first amplifier and an output terminal of the second amplifier and the antenna.

실시 예에 따른 다층 필터 및 이를 포함하는 프론트 엔드 모듈은 작은 크기를 갖고 용이하게 주파수를 튜닝할 수 있도록 하고, 커패시턴스와 인덕턴스를 쉽게 증가시킬 수 있는 구성을 갖는다.A multilayer filter according to an embodiment and a front-end module including the same have a small size, enable easy frequency tuning, and have a configuration that allows easy increase in capacitance and inductance.

도 1은 실시 예에 의한 다층 필터의 단면도를 나타낸다.Figure 1 shows a cross-sectional view of a multilayer filter according to an embodiment.

도 2는 도 1에 도시된 다층 필터의 일 실시 예에 의하면 사시도를 개략적으로 나타낸다.FIG. 2 schematically illustrates a perspective view according to one embodiment of the multilayer filter illustrated in FIG. 1.

도 3은 일 실시 예에 의한 다층 필터의 회로도를 나타낸다.Figure 3 shows a circuit diagram of a multilayer filter according to one embodiment.

도 4는 일 실시 예에 의한 다층 필터의 외관 사시도를 나타낸다.Figure 4 shows a perspective view of the exterior of a multilayer filter according to one embodiment.

도 5a는 도 4에 도시된 다층 필터에서 제1 그라운드층을 제거한 사시도를 나타낸다.FIG. 5a shows a perspective view of the multilayer filter illustrated in FIG. 4 with the first ground layer removed.

도 5b는 도 5a에 도시된 사시도의 평면도를 나타낸다.Figure 5b shows a plan view of the perspective view shown in Figure 5a.

도 6은 도 5b에 도시된 제1 도전 패턴층의 평면도를 나타낸다.Figure 6 shows a plan view of the first challenge pattern layer illustrated in Figure 5b.

도 7a는 도 5a에서 제1 도전 패턴층을 제거한 사시도를 나타낸다.Figure 7a shows a perspective view of Figure 5a with the first challenge pattern layer removed.

도 7b는 제2 도전 패턴층의 평면도를 나타낸다.Figure 7b shows a plan view of the second challenge pattern layer.

도 8a는 도 7a에서 제2 도전 패턴층을 제거한 사시도를 나타낸다.Figure 8a shows a perspective view of Figure 7a with the second challenge pattern layer removed.

도 8b는 제3 도전 패턴층의 평면도를 나타낸다.Figure 8b shows a plan view of the third challenge pattern layer.

도 9a는 도 8a에서 제3 도전 패턴층을 제거한 사시도를 나타낸다.Figure 9a shows a perspective view of Figure 8a with the third challenge pattern layer removed.

도 9b는 제4 도전 패턴층의 평면도를 나타낸다.Figure 9b shows a plan view of the fourth challenge pattern layer.

도 10a는 도 9a에서 제4 도전 패턴층을 제거한 사시도를 나타낸다.Figure 10a shows a perspective view of Figure 9a with the fourth challenge pattern layer removed.

도 10b는 제5 도전 패턴층의 평면도를 나타낸다.Figure 10b shows a plan view of the fifth challenge pattern layer.

도 11은 도 4에 도시된 다층 필터를 I-I’선으로 절개한 절단면도이다.Figure 11 is a cross-sectional view taken along line I-I’ of the multilayer filter illustrated in Figure 4.

도 12는 실시 예에 의한 다층 필터의 성능을 검사한 그래프이다.Figure 12 is a graph examining the performance of a multilayer filter according to an embodiment.

도 13은 실시 예에 의한 프론트 엔드 모듈의 블록도를 나타낸다.Figure 13 shows a block diagram of a front-end module according to an embodiment.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시 예를 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

다만, 본 발명의 기술 사상은 설명되는 일부 실시 예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있고, 본 발명의 기술 사상 범위 내에서라면, 실시 예들 간 그 구성 요소들 중 하나 이상을 선택적으로 결합, 치환하여 사용할 수 있다.However, the technical idea of the present invention is not limited to some of the embodiments described, but can be implemented in various different forms, and within the scope of the technical idea of the present invention, one or more of the components between the embodiments can be selectively combined or substituted for use.

또한, 본 발명의 실시 예에서 사용되는 용어(기술 및 과학적 용어를 포함)는, 명백하게 특별히 정의되어 기술되지 않는 한, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 일반적으로 이해될 수 있는 의미로 해석될 수 있으며, 사전에 정의된 용어와 같이 일반적으로 사용되는 용어들은 관련 기술의 문맥상의 의미를 고려하여 그 의미를 해석할 수 있을 것이다.In addition, terms (including technical and scientific terms) used in the embodiments of the present invention can be interpreted as having a meaning that can be generally understood by a person of ordinary skill in the technical field to which the present invention belongs, unless explicitly and specifically defined and described, and terms that are commonly used, such as terms defined in a dictionary, can be interpreted in consideration of the contextual meaning of the related technology.

또한, 본 발명의 실시 예에서 사용된 용어는 실시 예들을 설명하기 위한 것이며 본 발명을 제한하고자 하는 것은 아니다. 본 명세서에서, 단수형은 문구에서 특별히 언급하지 않는 한 복수형도 포함할 수 있고, “A 및(와) B, C중 적어도 하나(또는 한 개이상)”으로 기재되는 경우 A, B, C로 조합할 수 있는 모든 조합 중 하나이상을 포함할 수 있다.In addition, the terms used in the embodiments of the present invention are for the purpose of describing the embodiments and are not intended to limit the present invention. In this specification, the singular may also include the plural unless specifically stated in the phrase, and when it is described as “A and (or) at least one (or more) of B, C,” it may include one or more of all combinations that can be combined with A, B, C.

또한, 본 발명의 실시 예의 구성 요소를 설명하는 데 있어서, 제1, 제2, A, B, (a), (b) 등의 용어를 사용할 수 있다. 이러한 용어는 그 구성 요소를 다른 구성 요소와 구별하기 위한 것일 뿐, 그 용어에 의해 해당 구성 요소의 본질이나 차례 또는 순서 등으로 한정되지 않는다.In addition, in describing components of embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only intended to distinguish the components from other components, and are not intended to limit the nature, order, or sequence of the components.

그리고, 어떤 구성 요소가 다른 구성요소에 ‘연결’, ‘결합’ 또는 ‘접속’된다고 기재된 경우, 그 구성 요소는 그 다른 구성요소에 직접적으로 연결, 결합 또는 접속되는 경우뿐만 아니라, 그 구성 요소와 그 다른 구성요소 사이에 있는 또 다른 구성 요소로 인해 ‘연결’, ‘결합’ 또는 ‘접속’되는 경우도 포함할 수 있다.In addition, when a component is described as being “connected,” “coupled,” or “connected” to another component, it may include not only cases where the component is directly connected, coupled, or connected to the other component, but also cases where the component is “connected,” “coupled,” or “connected” by another component between the component and the other component.

또한, 각 구성 요소의 “상(위) 또는 하(아래)”에 형성 또는 배치되는 것으로 기재되는 경우, 상(위) 또는 하(아래)는 두 개의 구성 요소들이 서로 직접 접촉되는 경우뿐만 아니라 하나 이상의 또 다른 구성 요소가 두 개의 구성 요소들 사이에 형성 또는 배치되는 경우도 포함한다. 또한 “상(위) 또는 하(아래)”로 표현되는 경우 하나의 구성 요소를 기준으로 위쪽 방향뿐만 아니라 아래쪽 방향의 의미도 포함할 수 있다.In addition, when described as being formed or arranged “above or below” each component, above or below includes not only the case where the two components are in direct contact with each other, but also the case where one or more other components are formed or arranged between the two components. In addition, when expressed as “above or below,” it can include the meaning of the downward direction as well as the upward direction based on one component.

이하, 실시 예에 의한 다층 필터(100, 100A) 및 이를 포함하는 프론트 엔드 모듈(200)을 첨부된 도면을 참조하여 다음과 같이 설명한다. 편의상, 데카르트 좌표계(x축, y축, z축)를 이용하여 다층 필터(100, 100A)를 설명하지만, 다른 좌표계에 의해서도 이를 설명할 수 있음은 물론이다. 또한, 데카르트 좌표계에 의하면, x축, y축 및 z축은 서로 직교하지만, 실시 예는 이에 국한되지 않는다. 즉, x축, y축 및 z축은 서로 교차할 수도 있다. 이하, 설명의 편의상, x축 방향을 ‘제1 방향’이라 칭하고, y축 방향을 ‘제2 방향’이라 칭하고, z축 방향을 ‘제3 방향’이라 칭한다.Hereinafter, a multilayer filter (100, 100A) and a front-end module (200) including the same according to an embodiment will be described with reference to the attached drawings as follows. For convenience, the multilayer filter (100, 100A) will be described using a Cartesian coordinate system (x-axis, y-axis, z-axis), but it is obvious that the multilayer filter (100, 100A) can also be described using other coordinate systems. In addition, according to the Cartesian coordinate system, the x-axis, the y-axis, and the z-axis are orthogonal to each other, but the embodiment is not limited thereto. That is, the x-axis, the y-axis, and the z-axis may intersect each other. Hereinafter, for convenience of explanation, the x-axis direction is referred to as a ‘first direction’, the y-axis direction is referred to as a ‘second direction’, and the z-axis direction is referred to as a ‘third direction’.

도 1은 실시 예에 의한 다층 필터(100)의 단면도를 나타낸다.Figure 1 shows a cross-sectional view of a multilayer filter (100) according to an embodiment.

실시 예에 의하면, 다층 필터(100)는 복수의 층을 포함한다. 즉, 도 1에 도시된 바와 같이, 다층 필터(100)는 제1 그라운드(ground)(또는, 접지)층(GL1), 제2 그라운드층(GL2), 제1 내지 제N 도전 패턴층(TL1 내지 TLN) 및 유전층(또는, 인쇄회로기판(PCB: Printed Circuit Board))(DL1 내지 DL(N+1))을 포함할 수 있다. 여기서, N은 3이상의 양의 정수이다.According to an embodiment, the multilayer filter (100) includes a plurality of layers. That is, as illustrated in FIG. 1, the multilayer filter (100) may include a first ground (or ground) layer (GL1), a second ground layer (GL2), first to Nth conductive pattern layers (TL1 to TLN), and dielectric layers (or printed circuit boards (PCBs)) (DL1 to DL(N+1)). Here, N is a positive integer greater than or equal to 3.

제1 내지 제N 도전 패턴층(TL1 내지 TLN)은 제1 그라운드층(GL1)과 제2 그라운드층(GL2) 사이에서 제3 방향으로 순차적으로 적층되어 배치될 수 있다.The first to Nth challenge pattern layers (TL1 to TLN) can be sequentially stacked and arranged in a third direction between the first ground layer (GL1) and the second ground layer (GL2).

실시 예에 의하면 제1 및 제2 그라운드층(GL1, GL2) 각각에 연결되는 그라운드는 RF 그라운드이거나 DC 그라운드일 수 있다. 여기서, 다층 필터(100)가 단품일 경우 제1 및 제2 그라운드층(GL1, GL2) 각각은 RF 그라운드에 연결되고, 다층 필터(100)가 후술되는 프론트 엔드 모듈(200)에 포함될 경우 제1 및 제2 그라운드층(GL1, GL2) 각각은 RF 또는 DC 그라운드에 연결될 수 있으나, 실시 예는 이에 국한되지 않는다.According to an embodiment, the ground connected to each of the first and second ground layers (GL1, GL2) may be an RF ground or a DC ground. Here, when the multilayer filter (100) is a single product, each of the first and second ground layers (GL1, GL2) is connected to an RF ground, and when the multilayer filter (100) is included in a front-end module (200) described later, each of the first and second ground layers (GL1, GL2) may be connected to an RF or DC ground, but the embodiment is not limited thereto.

또한, 유전층(DL1 내지 DL(N+1))은 제1 및 제2 그라운드층(GL1, GL2)과 제1 내지 제N 도전 패턴층(TL1 내지 TLN) 사이에 배치될 수 있다. 즉, 제1 그라운드층(GL1)과 제1 도전 패턴층(TL1) 사이에 제1 유전층(DL1)이 배치되고, 제N 도전 패턴층(TLN)과 제2 그라운드층(GL2) 사이에 제N+1 유전층(DL(N+1))이 배치될 수 있다. 이와 같이, 제k 유전층(DLk)은 제k 도전 패턴층(TLk)과 제k+1 도전 패턴층(TL(k+1)) 사이에 배치될 수 있다. 여기서, 1≤k≤N-1이다. 이와 같이, 유전층의 개수는 도전 패턴층의 개수보다 1개 더 많을 수 있다.In addition, the dielectric layers (DL1 to DL(N+1)) may be disposed between the first and second ground layers (GL1, GL2) and the first to Nth conductive pattern layers (TL1 to TLN). That is, the first dielectric layer (DL1) may be disposed between the first ground layer (GL1) and the first conductive pattern layer (TL1), and the N+1th dielectric layer (DL(N+1)) may be disposed between the Nth conductive pattern layer (TLN) and the second ground layer (GL2). In this way, the kth dielectric layer (DLk) may be disposed between the kth conductive pattern layer (TLk) and the k+1th conductive pattern layer (TL(k+1)). Here, 1≤k≤N-1. In this way, the number of dielectric layers may be one more than the number of conductive pattern layers.

만일, N=3인 경우, 제1 내지 제3 도전 패턴층(TL1 내지 TL3)이 제1 그라운드층(GL1)과 제2 그라운드층(GL2) 사이에서 순차적으로 적층되고, 제1 내지 제4 유전층(DL1 내지 DL4)이 제1 그라운드층(GL1), 제1 내지 제3 도전 패턴층(TL1 내지 TL3) 및 제2 그라운드층(GL2) 사이에 배치될 수 있다.If N=3, the first to third conductive pattern layers (TL1 to TL3) may be sequentially laminated between the first ground layer (GL1) and the second ground layer (GL2), and the first to fourth dielectric layers (DL1 to DL4) may be arranged between the first ground layer (GL1), the first to third conductive pattern layers (TL1 to TL3), and the second ground layer (GL2).

도 2는 도 1에 도시된 다층 필터(100)의 일 실시 예(100A)에 의하면 사시도를 개략적으로 나타낸다.FIG. 2 schematically illustrates a perspective view of one embodiment (100A) of the multilayer filter (100) illustrated in FIG. 1.

N=5일 경우, 도 2에 도시된 바와 같이 제1 그라운드층(GL1)과 제2 그라운드층(GL2) 사이에 제1 내지 제5 도전 패턴층(TL1 내지 TL5)이 순차적으로 적층되어 배치되고, 제1 그라운드층(GL1), 제1 내지 제5 도전 패턴층(TL1 내지 TL5) 및 제2 그라운드층(GL2) 사이에 제1 내지 제6 유전층(DL1 내지 DL6)이 각각 배치될 수 있다.When N=5, as illustrated in FIG. 2, first to fifth conductive pattern layers (TL1 to TL5) may be sequentially stacked and arranged between the first ground layer (GL1) and the second ground layer (GL2), and first to sixth dielectric layers (DL1 to DL6) may be arranged between the first ground layer (GL1), the first to fifth conductive pattern layers (TL1 to TL5), and the second ground layer (GL2), respectively.

제1 내지 제N 도전 패턴층(TL1 내지 TLN) 중 인접하는 도전 패턴층은 제1 커패시턴스를 형성하는 커패시턴스 패턴층을 포함할 수 있다. 예를 들어, 수직으로 인접하는 제2 도전 패턴층(TL2)과 제3 도전 패턴층(TL3)은 각자의 커패시터 패턴층이 전기적 전도성을 갖는 도체로 구현되고 이들 사이에 유전 물질로 이루어진 제3 유전층(DL3)이 배치되어 제1 커패시턴스가 형성될 수 있다.Adjacent conductive pattern layers among the first to Nth conductive pattern layers (TL1 to TLN) may include capacitance pattern layers forming a first capacitance. For example, vertically adjacent second conductive pattern layers (TL2) and third conductive pattern layers (TL3) may each have their respective capacitor pattern layers implemented as conductors having electrical conductivity, and a third dielectric layer (DL3) made of a dielectric material may be disposed therebetween, thereby forming a first capacitance.

또한, 제1 내지 제N 도전 패턴층(TL1 내지 TLN) 중 적어도 일부는 인덕터를 형성하는 인덕턴스 패턴층을 포함할 수 있다. 이를 위해 인덕턴스 패턴층은 도체로 구현될 수 있다. 예를 들어, 제1 내지 제3 도전 패턴층(TL1 내지 TL3) 각각은 인덕턴스 패턴층을 포함할 수 있다.Additionally, at least some of the first to Nth conductive pattern layers (TL1 to TLN) may include an inductance pattern layer forming an inductor. For this purpose, the inductance pattern layer may be implemented as a conductor. For example, each of the first to third conductive pattern layers (TL1 to TL3) may include an inductance pattern layer.

또한, 실시 예에 의하면, 제1 커패시터를 형성하는 커패시턴스 패턴층은 제1 및 제2 그라운드층(GL1, GL2) 각각과 대향하여 제2 및 제3 커패시터를 형성하는 기생 커패시턴스를 형성할 수 있다.Additionally, according to the embodiment, the capacitance pattern layer forming the first capacitor can form parasitic capacitances forming the second and third capacitors facing the first and second ground layers (GL1, GL2), respectively.

전술한 바와 같이 구현된 실시 예에 의한 다층 필터(100, 100A)는 제1 커패시터와 인덕터와 제2 및 제3 커패시터를 이용하여 소망하는 주파수 대역을 갖는 신호를 필터링하는 대역 통과 필터일 수 있다.As described above, the multilayer filter (100, 100A) according to the implemented embodiment may be a bandpass filter that filters a signal having a desired frequency band by using a first capacitor, an inductor, and second and third capacitors.

이하, N=5이고 제1 도전 패턴층(TL1)을 제외하고 제2 내지 제5 도전 패턴층(TL2 내지 TL5)이 커패시턴스 패턴층을 포함하고, 제1, 제2 및 제3 도전 패턴층(TL1 내지 TL3)이 인덕턴스 패턴층을 포함하는 일 실시 예에 의한 다층 필터를 다음과 같이 설명한다.Hereinafter, a multilayer filter according to an embodiment of the present invention will be described as follows, in which N=5, the second to fifth conductive pattern layers (TL2 to TL5), excluding the first conductive pattern layer (TL1), include capacitance pattern layers, and the first, second, and third conductive pattern layers (TL1 to TL3) include inductance pattern layers.

도 3은 일 실시 예에 의한 다층 필터의 회로도를 나타낸다.Figure 3 shows a circuit diagram of a multilayer filter according to one embodiment.

도 3에 도시된 실시 예에 의한 다층 필터는 일종의 대역 통과 필터로서, 제11, 제12, 제21, 제22, 제31, 제32, 제41 및 제42 인덕터(L11, L12, L21, L22, L31, L32, L41, L42), 제11, 제12, 제21, 제22 및 제3 커패시터(C11, C12, C21, C22, C3)를 포함한다.The multilayer filter according to the embodiment illustrated in FIG. 3 is a kind of bandpass filter and includes the eleventh, twelfth, twentieth, twenty-first, twenty-second, thirty-first, thirty-second, forty-first, and forty-second inductors (L11, L12, L21, L22, L31, L32, L41, L42), and the eleventh, twelfth, twentieth, twenty-first, twenty-second, and third capacitors (C11, C12, C21, C22, C3).

제11 인덕터(L11)는 제1 포트(P1)와 연결된 일단을 갖는다. 제12 인덕터(L12)는 제2 포트(P2)와 연결된 일단을 갖는다.The eleventh inductor (L11) has one end connected to the first port (P1). The twelfth inductor (L12) has one end connected to the second port (P2).

제1 포트(P1)는 신호가 들어오는 입력 포트이고 제2 포트(P2)는 신호가 출력되는 출력 포트일 수 있다. 또는, 제1 포트(P1)는 신호가 출력되는 출력 포트이고 제2 포트(P2)는 신호가 들어오는 입력 포트일 수 있다.The first port (P1) may be an input port from which a signal enters and the second port (P2) may be an output port from which a signal is output. Alternatively, the first port (P1) may be an output port from which a signal is output and the second port (P2) may be an input port from which a signal enters.

제21 인덕터(L21)는 제11 인덕터(L11)의 타단과 연결된 일단을 갖고, 제22 인덕터(L22)는 제12 인덕터(L12)의 타단과 연결된 일단을 갖는다. 제31 인덕터(L21)는 제11 인덕터(L11)의 타단 즉, 제11 인덕터(L11)와 제21 인덕터(L21) 사이의 접점과 접지 사이에 연결되고, 제32 인덕터(L32)는 제12 인덕터(L12)의 타단 즉, 제12 인덕터(L12)와 제22 인덕터(L22) 사이의 접점과 접지 사이에 연결될 수 있다.The 21st inductor (L21) has one end connected to the other end of the 11th inductor (L11), and the 22nd inductor (L22) has one end connected to the other end of the 12th inductor (L12). The 31st inductor (L21) can be connected between the other end of the 11th inductor (L11), that is, a point of contact between the 11th inductor (L11) and the 21st inductor (L21), and ground, and the 32nd inductor (L32) can be connected between the other end of the 12th inductor (L12), that is, a point of contact between the 12th inductor (L12) and the 22nd inductor (L22), and ground.

제41 인덕터(L41)는 제21 인덕터(L21)의 타단 즉, 제21 인덕터(L21)와 제22 인덕터(L22) 사이의 접점과 접지 사이에 연결되고, 제42 인덕터(L42)는 제22 인덕터(L22)의 타단 즉, 제21 인덕터(L21)와 제22 인덕터(L22) 사이의 접점과 접지 사이에 연결될 수 있다.The 41st inductor (L41) may be connected between the other terminal of the 21st inductor (L21), that is, the contact point between the 21st inductor (L21) and the 22nd inductor (L22), and the ground, and the 42nd inductor (L42) may be connected between the other terminal of the 22nd inductor (L22), that is, the contact point between the 21st inductor (L21) and the 22nd inductor (L22), and the ground.

한편, 제11 커패시터(C11)는 제21 인덕터(L21)에 병렬 연결되고, 제12 커패시터(C12)는 제22 인덕터(L22)에 병렬 연결될 수 있다.Meanwhile, the 11th capacitor (C11) can be connected in parallel to the 21st inductor (L21), and the 12th capacitor (C12) can be connected in parallel to the 22nd inductor (L22).

제21 커패시터(C21)는 제31 인덕터(L31)에 병렬 연결되고, 제22 커패시터(C22)는 제32 인덕터(L32)에 병렬 연결된다.The 21st capacitor (C21) is connected in parallel to the 31st inductor (L31), and the 22nd capacitor (C22) is connected in parallel to the 32nd inductor (L32).

제3 커패시터(C3)는 제21 및 제22 인덕터(L21, L22)의 접점과 접지 사이에서 제41 및 제42 인덕터(L41, L42)와 병렬 연결된다.The third capacitor (C3) is connected in parallel with the 41st and 42nd inductors (L41, L42) between the contacts of the 21st and 22nd inductors (L21, L22) and ground.

실시 예에 의하면 제21, 제22 및 제3 커패시터(C21, C22, C3)는 기생 커패시턴스로 구현될 수 있다.According to an embodiment, the 21st, 22nd and 3rd capacitors (C21, C22, C3) can be implemented as parasitic capacitances.

실시 예에 의한 다층 필터는 도 3에 도시된 대역 통과 필터의 기능을 수행하기 위해 다양한 구성을 가질 수 있으며, 일 례를 다음과 같이 도 4 내지 도 10b를 참조하여 설명하지만, 실시 예는 이에 국한되지 않는다. 즉, 실시 예에 의한 다층 필터는 도 3에 도시된 회로 구성과 다른 회로 구성을 갖는 필터를 구현할 수도 있다.The multilayer filter according to the embodiment may have various configurations to perform the function of the bandpass filter illustrated in FIG. 3, and an example is described below with reference to FIGS. 4 to 10b, but the embodiment is not limited thereto. That is, the multilayer filter according to the embodiment may implement a filter having a circuit configuration different from the circuit configuration illustrated in FIG. 3.

도 4는 일 실시 예에 의한 다층 필터의 외관 사시도를 나타내고, 도 5a는 도 4에 도시된 다층 필터에서 제1 그라운드층(GL1)을 제거한 사시도를 나타내고, 도 5b는 도 5a에 도시된 사시도의 평면도를 나타내고, 도 6은 도 5b에 도시된 제1 도전 패턴층(TL1)의 평면도를 나타내고, 도 7a는 도 5a에서 제1 도전 패턴층(TL1)을 제거한 사시도를 나타내고, 도 7b는 제2 도전 패턴층(TL2)의 평면도를 나타내고, 도 8a는 도 7a에서 제2 도전 패턴층(TL2)을 제거한 사시도를 나타내고, 도 8b는 제3 도전 패턴층(TL3)의 평면도를 나타내고, 도 9a는 도 8a에서 제3 도전 패턴층(TL3)을 제거한 사시도를 나타내고, 도 9b는 제4 도전 패턴층(TL4)의 평면도를 나타내고, 도 10a는 도 9a에서 제4 도전 패턴층(TL4)을 제거한 사시도를 나타내고, 도 10b는 제5 도전 패턴층(TL5)의 평면도를 나타낸다.FIG. 4 is a perspective view of an exterior of a multilayer filter according to an embodiment, FIG. 5a is a perspective view of the multilayer filter illustrated in FIG. 4 with the first ground layer (GL1) removed, FIG. 5b is a plan view of the perspective view illustrated in FIG. 5a, FIG. 6 is a plan view of the first conductive pattern layer (TL1) illustrated in FIG. 5b, FIG. 7a is a perspective view of FIG. 5a with the first conductive pattern layer (TL1) removed, FIG. 7b is a plan view of the second conductive pattern layer (TL2), FIG. 8a is a perspective view of FIG. 7a with the second conductive pattern layer (TL2) removed, FIG. 8b is a plan view of the third conductive pattern layer (TL3), FIG. 9a is a perspective view of FIG. 8a with the third conductive pattern layer (TL3) removed, FIG. 9b is a plan view of the fourth conductive pattern layer (TL4), and FIG. 10a is a perspective view of FIG. 9a with the third conductive pattern layer (TL3) removed. A perspective view is shown with the fourth challenge pattern layer (TL4) removed, and FIG. 10b shows a plan view of the fifth challenge pattern layer (TL5).

도 3에 도시된 회로가 좌/우 대칭인 것과 동일하게, 도 4 내지 도 10b에 도시된 커패시턴스 패턴층과 인덕턴스 패턴층은 다층 필터의 장축(즉, x축)의 중심과 지나며 다층 필터의 단축 방향인 제2 방향과 나란한 가상의 수평선(IH)을 기준으로 대칭인 형상을 가질 수 있다.Just as the circuit illustrated in FIG. 3 is symmetrical left/right, the capacitance pattern layer and the inductance pattern layer illustrated in FIGS. 4 to 10b may have a symmetrical shape based on an imaginary horizontal line (IH) that passes through the center of the long axis (i.e., x-axis) of the multilayer filter and is parallel to the second direction, which is the short axis direction of the multilayer filter.

인덕턴스 패턴층은 제1 인덕터층(LP11, LP12), 제2 인덕터층(LP2U1, LP2U2, LP2L1, LP2L2), 제3 인덕터층(LP31, LP32) 및 제4 인덕터층(LP41, LP42)을 포함할 수 있다.The inductance pattern layer may include a first inductor layer (LP11, LP12), a second inductor layer (LP2U1, LP2U2, LP2L1, LP2L2), a third inductor layer (LP31, LP32), and a fourth inductor layer (LP41, LP42).

제1 인덕터층(LP11, LP12)은 도 3에 도시된 제11 및 제12 인덕터(L11, L12) 각각을 구현하는 층으로서, 도 7a 및 도 7b에 도시된 바와 같이 제2 도전 패턴층(TL2)에 배치될 수 있다.The first inductor layer (LP11, LP12) is a layer that implements the 11th and 12th inductors (L11, L12) respectively illustrated in FIG. 3, and can be placed on the second conductive pattern layer (TL2) as illustrated in FIGS. 7a and 7b.

제2 인덕터층은 제2 도전 패턴층(TL2)과 제3 도전 패턴층(TL3)에 걸쳐서 배치될 수 있다. 즉, 제2 인덕터층은 도 7b에 도시된 바와 같이 제1 커패시터층(CP11, CP12)과 연결된 일단을 갖고 제2 도전 패턴층(TL2)에 배치된 제2 상측 인덕터층 및 도 8b에 도시된 바와 같이 제2 상측 인덕터층의 타단과 각각 연결된 일단과 제2 커패시터층(CP2)과 연결된 타단을 갖고 제3 도전 패턴층(TL3)에 배치된 제2 하측 인덕터층를 포함한다. 이때, 제2 상측 인덕터층은 제21 상측 인덕터층(LP2U1)과 제22 상측 인덕터층(LP2U2)을 포함하고, 제2 하측 인덕터층은 제21 하측 인덕터층(LP2L1)과 제22 하측 인덕터층(LP2L2)을 포함한다.The second inductor layer can be arranged across the second conductive pattern layer (TL2) and the third conductive pattern layer (TL3). That is, the second inductor layer includes a second upper inductor layer arranged on the second conductive pattern layer (TL2) and having one end connected to the first capacitor layers (CP11, CP12) as illustrated in FIG. 7b, and a second lower inductor layer arranged on the third conductive pattern layer (TL3) and having one end each connected to the other end of the second upper inductor layer and the other end connected to the second capacitor layer (CP2) as illustrated in FIG. 8b. At this time, the second upper inductor layer includes the twenty-first upper inductor layer (LP2U1) and the twenty-second upper inductor layer (LP2U2), and the second lower inductor layer includes the twenty-first lower inductor layer (LP2L1) and the twenty-second lower inductor layer (LP2L2).

제21 상측 인덕터층(LP2U1)과 제21 하측 인덕터층(LP2L1)이 도 3에 도시된 제21 인덕터(L21)를 구현하고, 제22 상측 인덕터층(LP2U2)과 제22 하측 인덕터층(LP2L2)이 도 3에 도시된 제22 인덕터(L22)를 구현한다.The 21st upper inductor layer (LP2U1) and the 21st lower inductor layer (LP2L1) implement the 21st inductor (L21) illustrated in FIG. 3, and the 22nd upper inductor layer (LP2U2) and the 22nd lower inductor layer (LP2L2) implement the 22nd inductor (L22) illustrated in FIG. 3.

또한, 제3 인덕터층(LP31, LP32)은 도 3에 도시된 제31 및 제32 인덕터(L31, L32)를 각각 구현하는 층으로서, 도 5a 및 도 6에 도시된 바와 같이 제1 도전 패턴층(TL1)에 배치될 수 있다.In addition, the third inductor layer (LP31, LP32) is a layer that implements the 31st and 32nd inductors (L31, L32) illustrated in FIG. 3, respectively, and can be placed on the first conductive pattern layer (TL1) as illustrated in FIG. 5a and FIG. 6.

또한, 제4 인덕터층(LP41, LP42)은 도 3에 도시된 제41 및 제42 인덕터(L41, L42)를 각각 구현하는 층으로서, 도 8a 및 도 8b에 도시된 바와 같이 제3 도전 패턴층(TL3)에 배치될 수 있다.In addition, the fourth inductor layer (LP41, LP42) is a layer that implements the 41st and 42nd inductors (L41, L42) illustrated in FIG. 3, respectively, and can be placed on the third conductive pattern layer (TL3) as illustrated in FIGS. 8a and 8b.

실시 예에 의하면, 제1, 제2, 제3 및 제4 인덕터층 각각은 수평 방향으로 적어도 한번 절곡된 평면 형상을 가질 수 있다. 예를 들어, 도 7b 및 도 8b에 도시된 바와 같이 제2 상측 인덕터층(LP2U1, LP2U2), 제2 하측 인덕터층(LP2L1, LP2L2) 및 제4 인덕터층(LP41, LP42) 각각은 수평 방향으로 한 번 절곡된 평면 형상을 가질 수 있고, 도 6에 도시된 바와 같이 제3 인덕터층(LP31, LP32)은 수평 방향을 두 번 절곡된 평면 형상을 가질 수 있다.According to an embodiment, each of the first, second, third and fourth inductor layers may have a planar shape folded at least once in the horizontal direction. For example, as illustrated in FIGS. 7b and 8b, each of the second upper inductor layers (LP2U1, LP2U2), the second lower inductor layers (LP2L1, LP2L2) and the fourth inductor layer (LP41, LP42) may have a planar shape folded once in the horizontal direction, and as illustrated in FIG. 6, the third inductor layer (LP31, LP32) may have a planar shape folded twice in the horizontal direction.

한편, 커패시턴스 패턴층은 제1 커패시터층(CP11, CP12), 제2 커패시터층(CP2), 제3 커패시터층(CP31, CP32) 및 제4 커패시터층(CP4)을 포함할 수 있다.Meanwhile, the capacitance pattern layer may include a first capacitor layer (CP11, CP12), a second capacitor layer (CP2), a third capacitor layer (CP31, CP32), and a fourth capacitor layer (CP4).

제1 커패시턴스를 갖는 제1 커패시터층은 도 7a 및 도 7b에 도시된 바와 같이 제2 도전 패턴층(TL2)에 배치되고, 수평 방향인 제1 방향으로 제1 거리(X1)만큼 이격되어 서로 대면하는 제11 및 제12 커패시터층(CP11, CP12)을 포함할 수 있다.The first capacitor layer having the first capacitance may be arranged on the second conductive pattern layer (TL2) as illustrated in FIGS. 7a and 7b, and may include eleventh and twelfth capacitor layers (CP11, CP12) facing each other and spaced apart from each other by a first distance (X1) in the first direction, which is the horizontal direction.

제2 커패시턴스를 갖는 제2 커패시터층(CP2)은 도 8a 및 도 8b에 도시된 바와 같이, 제3 도전 패턴층(TL3)에 배치될 수 있다.A second capacitor layer (CP2) having a second capacitance can be arranged on the third conductive pattern layer (TL3), as illustrated in FIGS. 8a and 8b.

제3 커패시턴스를 갖는 제3 커패시터층은 도 9a 및 도 9b에 도시된 바와 같이 제4 도전 패턴층(TL4)에 배치되며, 수평 방향인 제1 방향으로 제2 거리(X2)만큼 이격되어 서로 대면하는 제31 및 제32 커패시터층(CP31, CP32)을 포함할 수 있다.The third capacitor layer having the third capacitance may be arranged on the fourth conductive pattern layer (TL4) as illustrated in FIGS. 9a and 9b, and may include 31st and 32nd capacitor layers (CP31, CP32) facing each other and spaced apart from each other by a second distance (X2) in the first direction, which is the horizontal direction.

실시 예에 의하면, 제1 및 제2 거리(X1, X2) 각각이 50㎛보다 작을 경우 원하지 않은 기생 커패시턴스가 생성되어 통과 대역의 대역폭이 좁아지거나 혹은 불요파(spurious)가 발생하여 고조파에 영향을 미칠 수 있고, 300㎛보다 클 경우 성능의 변화는 미미하고 다층 필터의 크기만 증가시킬 수 있다. 따라서, 제1 및 제2 거리(X1, X2) 각각은 50㎛ 내지 300㎛일 수 있으나, 실시 예는 이에 국한되지 않는다.According to an embodiment, if each of the first and second distances (X1, X2) is less than 50 μm, an unwanted parasitic capacitance may be generated, narrowing the bandwidth of the pass band or generating spurious waves, which may affect harmonics, and if it is greater than 300 μm, there is little change in performance and only the size of the multilayer filter may increase. Therefore, each of the first and second distances (X1, X2) may be 50 μm to 300 μm, but the embodiment is not limited thereto.

제4 커패시턴스를 갖는 제4 커패시터층(CP4)은 도 10a 및 도 10b에 도시된 바와 같이 제5 도전 패턴층(TL5)에 배치될 수 있다.A fourth capacitor layer (CP4) having a fourth capacitance can be arranged on the fifth conductive pattern layer (TL5) as illustrated in FIGS. 10a and 10b.

도 5a, 도 6a, 도 7a, 도 8a, 도 9a 및 도 10a를 참조하면, 제1 커패시터층(CP11, CP12)과 제3 커패시터층(CP31, CP32)은 서로 연결되고, 제2 커패시터층(CP2)과 제4 커패시터층(CP4)은 서로 전기적으로 연결될 수 있다. 즉, 제11 커패시터층(CP11)은 제31 커패시터층(CP31)과 전기적으로 연결되고, 제12 커패시터층(CP12)은 제32 커패시터층(CP32)과 전기적으로 연결될 수 있다.Referring to FIGS. 5A, 6A, 7A, 8A, 9A, and 10A, the first capacitor layer (CP11, CP12) and the third capacitor layer (CP31, CP32) may be connected to each other, and the second capacitor layer (CP2) and the fourth capacitor layer (CP4) may be electrically connected to each other. That is, the eleventh capacitor layer (CP11) may be electrically connected to the 31st capacitor layer (CP31), and the twelfth capacitor layer (CP12) may be electrically connected to the 32nd capacitor layer (CP32).

이를 위해, 다층 필터는 제1 및 제2 비아를 포함할 수 있다. 제1 비아는 제1 커패시터층(CP11, CP12)과 제3 커패시터층(CP31, CP32)을 연결하고, 제2 비아(VA2)는 제2 커패시터층(CP2)과 제4 커패시터층(CP4)을 연결한다.To this end, the multilayer filter may include first and second vias. The first via connects the first capacitor layer (CP11, CP12) and the third capacitor layer (CP31, CP32), and the second via (VA2) connects the second capacitor layer (CP2) and the fourth capacitor layer (CP4).

제1 비아는 제11 비아(VA11) 및 제12 비아(VA12)를 포함할 수 있다.The first via may include an eleventh via (VA11) and a twelfth via (VA12).

제11 비아(VA11)는 제11 커패시터층(CP11)과 제31 커패시터층(CP31)을 전기적으로 연결하고, 제12 비아(VA12)는 제12 커패시터층(CP12)과 제32 커패시터층(CP32)을 전기적으로 연결하는 역할을 한다.The 11th via (VA11) electrically connects the 11th capacitor layer (CP11) and the 31st capacitor layer (CP31), and the 12th via (VA12) electrically connects the 12th capacitor layer (CP12) and the 32nd capacitor layer (CP32).

제11 및 제12 비아(VA11, VA12)는 제2 커패시터층(CP2)을 관통하며, 제2 커패시터층(CP2)은 도 8b에 도시된 바와 같이 제1 및 제2 관통홀(TH1, TH2)을 포함할 수 있다. 제11 비아(VA11)는 제1 관통홀(TH1)을 관통하며 제12 비아(VA12)는 제2 관통홀(TH2)을 관통할 수 있다. 제11 및 제12 비아(VA11, VA12)가 제2 커패시터층(CP2)과 전기적으로 이격되도록, 제11 비아(VA11)의 직경보다 제1 관통홀(TH1)의 직경을 크게 형성하고, 제12 비아(VA12)의 직경보다 제2 관통홀(TH2)의 직경을 크게 형성할 수 있다.The eleventh and twelfth vias (VA11, VA12) penetrate the second capacitor layer (CP2), and the second capacitor layer (CP2) may include first and second through-holes (TH1, TH2) as illustrated in FIG. 8B. The eleventh via (VA11) may penetrate the first through-hole (TH1), and the twelfth via (VA12) may penetrate the second through-hole (TH2). In order for the eleventh and twelfth vias (VA11, VA12) to be electrically separated from the second capacitor layer (CP2), the diameter of the first through-hole (TH1) may be formed larger than the diameter of the eleventh via (VA11), and the diameter of the second through-hole (TH2) may be formed larger than the diameter of the twelfth via (VA12).

도 9b를 참조하면, 제31 및 제32 커패시터 패턴층(CP31, CP32)은 제2 비아(VA2)를 사이에 두고 서로 이격되어 배치된 평면 형상을 가질 수 있다. 따라서, 제31 및 제32 커패시터 패턴층(CP31, CP32)은 제2 비아(VA2)와 전기적으로 이격될 수 있다.Referring to FIG. 9b, the 31st and 32nd capacitor pattern layers (CP31, CP32) may have a planar shape in which they are spaced apart from each other with the second via (VA2) interposed therebetween. Accordingly, the 31st and 32nd capacitor pattern layers (CP31, CP32) may be electrically spaced apart from the second via (VA2).

전술한 인덕턴스 패턴층과 커패시턴스 패턴층은 도 3에 도시된 회로를 구현하기 위해 비아에 의해 수직 방향과 수평 방향으로 서로 연결될 수 있다.The above-described inductance pattern layer and capacitance pattern layer can be connected to each other in the vertical and horizontal directions by vias to implement the circuit illustrated in FIG. 3.

실시 예에 의한 다층 필터는, 제31, 제32, 제41, 제42, 제5, 제61, 제62, 제71 및 제72 비아(VA31, VA32, VA41, VA42, VA5, VA61, VA62, VA71, VA72)를 포함할 수 있다.The multilayer filter according to the embodiment may include the 31st, 32nd, 41st, 42nd, 5th, 61st, 62nd, 71st, and 72nd vias (VA31, VA32, VA41, VA42, VA5, VA61, VA62, VA71, VA72).

제31 비아(VA31)는 제11 커패시터층(CP11)과 제21 상측 인덕터층(LP2U1)의 일단과 제11 인덕터층(LP11)의 일단과 연결되며, 제1 및 제2 그라운드층(GL1, GL2)과 연결되지 않는다.The 31st via (VA31) is connected to one end of the 11th capacitor layer (CP11) and the 21st upper inductor layer (LP2U1) and one end of the 11th inductor layer (LP11), and is not connected to the first and second ground layers (GL1, GL2).

제32 비아(VA32)는 제12 커패시터층(CP12)과 제22 상측 인덕터층(LP2U2)의 일단과 제12 인덕터층(LP12)의 일단과 연결되며, 제1 및 제2 그라운드층(GL1, GL2)과 연결되지 않는다.The 32nd via (VA32) is connected to one end of the 12th capacitor layer (CP12) and the 22nd upper inductor layer (LP2U2) and one end of the 12th inductor layer (LP12), and is not connected to the first and second ground layers (GL1, GL2).

제41 비아(VA41)는 제11 인덕터층(LP11)의 타단 및 제1 포트(P1)와 연결되고, 제42 비아(VA42)는 제12 인덕터층(LP12)의 타단 및 제2 포트(P2)와 연결된다.The 41st via (VA41) is connected to the other end of the 11th inductor layer (LP11) and the first port (P1), and the 42nd via (VA42) is connected to the other end of the 12th inductor layer (LP12) and the second port (P2).

제41 및 제42 비아(VA41, VA42)는 제1 및 제2 그라운드층(GL1, GL2)과 연결되지 않는다.The 41st and 42nd vias (VA41, VA42) are not connected to the first and second ground layers (GL1, GL2).

제5 비아(VA5)는 제31 인덕터층(LP31) 및 제32 인덕터층(LP32) 각각의 일단과 제1 그라운드층(GL1)을 연결한다. 제31 인덕터층(LP31)의 타단은 제11 비아(VA11)와 연결되고, 제32 인덕터층(LP32)의 타단은 제12 비아(VA12)와 연결될 수 있다.The fifth via (VA5) connects one end of each of the 31st inductor layer (LP31) and the 32nd inductor layer (LP32) to the first ground layer (GL1). The other end of the 31st inductor layer (LP31) can be connected to the 11th via (VA11), and the other end of the 32nd inductor layer (LP32) can be connected to the 12th via (VA12).

제61 비아(VA61)는 제21 상측 인덕터층(LP2U1)의 타단 및 제21 하측 인덕터층(LP2L1)의 일단과 각각 연결되고, 제62 비아(VA62)는 제22 상측 인덕터층(LP2U2)의 타단 및 제22 하측 인덕터층(LP2L2)의 일단과 각각 연결된다. 이때, 제61 및 제62 비아(VA61, VA62)는 제1 및 제2 그라운드층(GL1, GL2)과 연결되지 않는다.The 61st via (VA61) is connected to the other end of the 21st upper inductor layer (LP2U1) and one end of the 21st lower inductor layer (LP2L1), respectively, and the 62nd via (VA62) is connected to the other end of the 22nd upper inductor layer (LP2U2) and one end of the 22nd lower inductor layer (LP2L2), respectively. At this time, the 61st and 62nd vias (VA61, VA62) are not connected to the first and second ground layers (GL1, GL2).

이때, 제21 하측 인덕터층(LP2L1)의 타단은 제2 커패시터층(CP2)과 연결되고, 제22 하측 인덕터층(LP2L2)의 타단도 제2 커패시터층(CP2)과 연결된다.At this time, the other end of the 21st lower inductor layer (LP2L1) is connected to the second capacitor layer (CP2), and the other end of the 22nd lower inductor layer (LP2L2) is also connected to the second capacitor layer (CP2).

제71 비아(VA71)는 제41 인덕터층(LP41)의 일단과 제2 그라운드층(GL2)에 각각 연결되고, 제72 비아(VA71)는 제42 인덕터층(LP42)의 일단과 제2 그라운드층(GL2)에 각각 연결된다.The 71st via (VA71) is connected to one end of the 41st inductor layer (LP41) and the second ground layer (GL2), respectively, and the 72nd via (VA71) is connected to one end of the 42nd inductor layer (LP42) and the second ground layer (GL2), respectively.

제41 인덕터층(LP41) 및 제42 인덕터층(LP42) 각각의 타단은 제2 커패시터층(CP2)과 연결된다.The other end of each of the 41st inductor layer (LP41) and the 42nd inductor layer (LP42) is connected to the second capacitor layer (CP2).

또한, 실시 예에 의한 다층 필터는 제8 비아를 더 포함할 수 있다. 제8 비아는 제1 그라운드층(GL1)과 제2 그라운드층(GL2)을 연결하는 역할을 한다. 도시된 바와 같이, 제8 비아는 10개의 제8 비아(VA81 내지 VA810)를 포함할 수 있으나, 실시 예는 제8 비아의 특정한 개수에 국한되지 않는다.Additionally, the multilayer filter according to the embodiment may further include an eighth via. The eighth via serves to connect the first ground layer (GL1) and the second ground layer (GL2). As illustrated, the eighth via may include ten eighth vias (VA81 to VA810), but the embodiment is not limited to a specific number of the eighth vias.

또한, 실시 예에 의한 다층 필터는 도 5b, 도 7b, 도 8b 및 도 9b에 각각 도시된 바와 같이 제9 비아(VA91, VA92)를 더 포함할 수 있다. 제9 비아(VA91, VA92)는 제2 내지 제4 도전 패턴층(TL2, TL3, TL4)을 서로 연결하는 역할을 하며, 도 5a, 도 7a, 도 8a 및 도 9a에 도시된 바와 같이, 제9 비아(VA91, VA92)는 생략될 수도 있다.In addition, the multilayer filter according to the embodiment may further include a ninth via (VA91, VA92) as illustrated in FIGS. 5b, 7b, 8b, and 9b, respectively. The ninth via (VA91, VA92) serves to connect the second to fourth conductive pattern layers (TL2, TL3, TL4) to each other, and as illustrated in FIGS. 5a, 7a, 8a, and 9a, the ninth via (VA91, VA92) may be omitted.

도 11은 도 4에 도시된 다층 필터를 I-I’선으로 절개한 절단면도로서, 제1 및 제2 그라운드층(GL1, GL2)과 제1 내지 제3 커패시터층(CP11, CP12, CP2, CP3)만을 나타낸다.FIG. 11 is a cross-sectional view taken along line I-I’ of the multilayer filter illustrated in FIG. 4, showing only the first and second ground layers (GL1, GL2) and the first to third capacitor layers (CP11, CP12, CP2, CP3).

제11 및 제12 커패시터(C11, C12) 각각의 제1 커패시턴스는 제11, 제12 및 제13 커패시턴스를 포함할 수 있다.The first capacitance of each of the eleventh and twelfth capacitors (C11, C12) may include the eleventh, twelfth, and thirteenth capacitances.

제11 커패시턴스는 제1 커패시터층(CP11, CP12)과 제2 커패시터층(CP2)이 대향하여 형성되고, 제12 커패시턴스는 제2 커패시터층(CP2)과 제3 커패시터층(CP31, CP32)이 대향하여 형성되고, 제13 커패시턴스는 제3 커패시터층(CP31, CP32)과 제4 커패시터층(CP4)이 대향하여 형성된다.The 11th capacitance is formed by opposing the first capacitor layer (CP11, CP12) and the second capacitor layer (CP2), the 12th capacitance is formed by opposing the second capacitor layer (CP2) and the third capacitor layer (CP31, CP32), and the 13th capacitance is formed by opposing the third capacitor layer (CP31, CP32) and the fourth capacitor layer (CP4).

구체적으로, 전술한 커패시턴스 패턴층은 도 3에 도시된 커패시터(C11, C12, C21, C22, C3)를 다음과 같이 구현할 수 있다.Specifically, the aforementioned capacitance pattern layer can implement the capacitors (C11, C12, C21, C22, C3) illustrated in FIG. 3 as follows.

먼저, 도 3에 도시된 제11 커패시터(C11)의 커패시턴스는 거리(Z111)만큼 이격된 제11 커패시터층(CP11)과 제2 커패시터층(CP2)이 대향하여 형성되는 제11 커패시턴스와, 거리(Z112)만큼 이격된 제2 커패시터층(CP2)과 제31 커패시터층(CP31)이 대향하여 형성되는 제12 커패시턴스와, 거리(Z113)만큼 이격된 제31 커패시터층(CP31)과 제4 커패시터층(CP4)이 대향하여 형성되는 제13 커패시턴스가 합성된 결과이다.First, the capacitance of the 11th capacitor (C11) illustrated in FIG. 3 is a result of synthesizing the 11th capacitance formed by opposing the 11th capacitor layer (CP11) and the 2nd capacitor layer (CP2) spaced apart by a distance (Z111), the 12th capacitance formed by opposing the 2nd capacitor layer (CP2) and the 31st capacitor layer (CP31) spaced apart by a distance (Z112), and the 13th capacitance formed by opposing the 31st capacitor layer (CP31) and the 4th capacitor layer (CP4) spaced apart by a distance (Z113).

이와 비슷하게, 제12 커패시터(C12)의 커패시턴스는 거리(Z121)만큼 이격된 제12 커패시터층(CP12)과 제2 커패시터층(CP2)이 대향하여 형성되는 제11 커패시턴스와, 거리(Z122)만큼 이격된 제2 커패시터층(CP2)과 제32 커패시터층(CP32)이 대향하여 형성되는 제12 커패시턴스와, 거리(Z123)만큼 이격된 제32 커패시터층(CP32)과 제4 커패시터층(CP4)이 대향하여 형성되는 제13 커패시턴스가 합성된 결과이다.Similarly, the capacitance of the 12th capacitor (C12) is a result of synthesizing the 11th capacitance formed by opposing the 12th capacitor layer (CP12) and the 2nd capacitor layer (CP2) spaced apart by a distance (Z121), the 12th capacitance formed by opposing the 2nd capacitor layer (CP2) and the 32nd capacitor layer (CP32) spaced apart by a distance (Z122), and the 13th capacitance formed by opposing the 32nd capacitor layer (CP32) and the 4th capacitor layer (CP4) spaced apart by a distance (Z123).

전술한 제1 커패시턴스(C1)와 달리 제2 및 제3 커패시턴스는 기생 커패시턴스에 해당할 수 있다.Unlike the first capacitance (C1) mentioned above, the second and third capacitances may correspond to parasitic capacitances.

먼저, 제21 커패시터(C21)의 커패시턴스는 거리(Z211)만큼 이격된 제11 커패시터층(CP11)과 제1 그라운드층(GL1) 간에 야기되는 기생 커패시턴스와, 거리(Z212)만큼 이격된 제11 커패시터층(CP11)과 제2 그라운드층(GL2) 간에 야기되는 기생 커패시턴스와, 거리(Z213)만큼 이격된 제31 커패시터층(CP31)과 제1 그라운드층(GL1) 간에 야기되는 기생 커패시턴스와, 거리(Z214)만큼 이격된 제31 커패시터층(CP31)과 제2 그라운드층(GL2) 간에 야기되는 기생 커패시턴스가 합성된 결과이다.First, the capacitance of the 21st capacitor (C21) is a result of synthesizing the parasitic capacitance caused between the 11th capacitor layer (CP11) and the first ground layer (GL1) spaced apart by a distance (Z211), the parasitic capacitance caused between the 11th capacitor layer (CP11) and the second ground layer (GL2) spaced apart by a distance (Z212), the parasitic capacitance caused between the 31st capacitor layer (CP31) and the first ground layer (GL1) spaced apart by a distance (Z213), and the parasitic capacitance caused between the 31st capacitor layer (CP31) and the second ground layer (GL2) spaced apart by a distance (Z214).

제22 커패시터(C22)의 커패시턴스는 거리(Z221)만큼 이격된 제12 커패시터층(CP12)과 제1 그라운드층(GL1) 간에 야기되는 기생 커패시턴스와, 거리(Z222)만큼 이격된 제12 커패시터층(CP12)과 제2 그라운드층(GL2) 간에 야기되는 기생 커패시턴스와, 거리(Z223)만큼 이격된 제32 커패시터층(CP32)과 제1 그라운드층(GL1) 간에 야기되는 기생 커패시턴스와, 거리(Z224)만큼 이격된 제32 커패시터층(CP32)과 제2 그라운드층(GL2) 간에 야기되는 기생 커패시턴스가 합성된 결과이다.The capacitance of the 22nd capacitor (C22) is a result of synthesizing the parasitic capacitance caused between the 12th capacitor layer (CP12) and the first ground layer (GL1) spaced apart by a distance (Z221), the parasitic capacitance caused between the 12th capacitor layer (CP12) and the second ground layer (GL2) spaced apart by a distance (Z222), the parasitic capacitance caused between the 32nd capacitor layer (CP32) and the first ground layer (GL1) spaced apart by a distance (Z223), and the parasitic capacitance caused between the 32nd capacitor layer (CP32) and the second ground layer (GL2) spaced apart by a distance (Z224).

제3 커패시터(C3)의 커패시턴스는 거리(Z31)만큼 이격된 제2 커패시터층(CP2)과 제1 그라운드층(GL1) 간의 기생 커패시턴스와, 거리(Z32)만큼 이격된 제2 커패시터층(CP2)과 제2 그라운드층(GL2) 간의 기생 커패시턴스와, 거리(Z33)만큼 이격된 제2 커패시터층(CP2)과 제1 그라운드층(GL1) 간의 기생 커패시턴스와, 거리(Z34)만큼 이격된 제4 커패시터층(CP2)과 제2 그라운드층(GL2) 간의 기생 커패시턴스가 합성된 결과이다.The capacitance of the third capacitor (C3) is a result of the synthesis of the parasitic capacitance between the second capacitor layer (CP2) and the first ground layer (GL1) spaced apart by a distance (Z31), the parasitic capacitance between the second capacitor layer (CP2) and the second ground layer (GL2) spaced apart by a distance (Z32), the parasitic capacitance between the second capacitor layer (CP2) and the first ground layer (GL1) spaced apart by a distance (Z33), and the parasitic capacitance between the fourth capacitor layer (CP2) and the second ground layer (GL2) spaced apart by a distance (Z34).

원하는 커패시턴스를 얻기 위해, 수직 방향으로 서로 인접하는 그라운드층(GL1, GL2)과 커패시터층(CP11, CP12, CP2, CP31, CP32, CP4)이 수직 방향으로 원하는 만큼 중복될 수 있고 그라운드층(GL1, GL2)과 커패시터층(CP11, CP12, CP2, CP31, CP32, CP4) 사이에 배치된 유전층의 유전율을 조정할 수도 있고, 커패시턴스를 형성하는 커패시터층이 서로 대향하는 면적을 조정할 수도 있다.To obtain a desired capacitance, the ground layers (GL1, GL2) and capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) that are vertically adjacent to each other can be vertically overlapped as much as desired, and the permittivity of the dielectric layer arranged between the ground layers (GL1, GL2) and the capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) can be adjusted, and the area of the capacitor layers that form the capacitance facing each other can be adjusted.

다른 실시 예에 의한 다층 필터는 전술한 제1 내지 제3 도전 패턴층(TL1 내지 TL4)과 제1 내지 4 유전층(DL1 내지 DL4)만을 포함할 수 있다 (즉, N=3). 즉, 다른 실시 예에 의하면, 도 4 내지 도 11에서 제4 및 제5 도전 패턴층(TL4, TL5)과 제1 비아 및 제2 비아(VA11, VA12, VA2)는 생략될 수 있다. 이를 제외하면, 다른 실시 예에 의한 다층 필터는 일 실시 예에 의한 다층 필터와 동일하므로 중복되는 설명을 생략한다.A multilayer filter according to another embodiment may include only the first to third conductive pattern layers (TL1 to TL4) and the first to fourth dielectric layers (DL1 to DL4) described above (i.e., N=3). That is, according to another embodiment, the fourth and fifth conductive pattern layers (TL4, TL5) and the first and second vias (VA11, VA12, VA2) in FIGS. 4 to 11 may be omitted. Except for this, the multilayer filter according to another embodiment is the same as the multilayer filter according to one embodiment, and thus, a redundant description will be omitted.

또한, 제2 상측 인덕터층을 제2 도전 패턴층(TL2)에 배치하고, 제2 하측 인덕터층을 제3 도전 패턴층(TL3)에 배치한 후, 제51 및 제52 비아(VA51, VA52)를 이용하여 이들을 연결함으로써, 제2 인덕터(L21, L22)가 원하는 인덕턴스를 갖도록 길이를 증가시킬 수 있다.In addition, by arranging the second upper inductor layer on the second conductive pattern layer (TL2), arranging the second lower inductor layer on the third conductive pattern layer (TL3), and then connecting them using the 51st and 52nd vias (VA51, VA52), the length of the second inductors (L21, L22) can be increased so that they have a desired inductance.

일 실시 예에 의한 다층 필터의 경우 제11 및 제12 커패시터층(CP11, CP12)이 제31 및 제32 커패시터층(CP31, CP32)과 제11 및 제12 비아(VA11, VA12)에 의해 연결되므로, 커패시터가 병렬로 연결된 구조를 가질 수 있어, 원하는 만큼 제1 커패시턴스를 증가시킬 수 있다.In the case of a multilayer filter according to one embodiment, since the 11th and 12th capacitor layers (CP11, CP12) are connected to the 31st and 32nd capacitor layers (CP31, CP32) by the 11th and 12th vias (VA11, VA12), the capacitors can have a structure in which they are connected in parallel, thereby increasing the first capacitance as much as desired.

그러나, 제1 커패시턴스를 증가시킬 필요가 없는 경우, 다른 실시 예에서와 같이 제4 및 제5 도전 패턴층(TL3, TL4)과 제11 및 제12 및 제2 비아(VA11, VA12, VA2)를 생략할 수도 있다.However, if there is no need to increase the first capacitance, the fourth and fifth conductive pattern layers (TL3, TL4) and the eleventh and twelfth and second vias (VA11, VA12, VA2) may be omitted as in other embodiments.

이하, 실시 예에 의한 도 3에 도시된 다층 필터의 동작을 첨부된 도면을 참조하여 다음과 같이 설명한다.Hereinafter, the operation of the multilayer filter illustrated in FIG. 3 according to an embodiment is described as follows with reference to the attached drawings.

도 12는 실시 예에 의한 다층 필터의 성능을 검사한 그래프로서, 횡축은 주파수를 나타내고 종축은 S 파라미터를 각각 나타낸다.Figure 12 is a graph that examines the performance of a multilayer filter according to an embodiment, in which the horizontal axis represents frequency and the vertical axis represents S parameters, respectively.

도 12는 실시 예에 의한 다층 필터를 5.925㎓ 내지 7.125㎓의 통과 대역을 갖는 WiFi 6E에 적용하여 시뮬레이션한 결과로서 삽입 손실(Insertion loss)은 -5㏈이하이다.Fig. 12 shows the simulation result of applying a multilayer filter according to an embodiment to WiFi 6E having a passband of 5.925㎓ to 7.125㎓, and the insertion loss is -5㏈ or less.

도 3에 도시된 제21 및 제22 인덕터(L21. L22) 및 제11 및 제12 커패시터(C11, C12)는 전송 영점을 만드는 역할을 한다. 도 12를 참조하면, 전송 영점(310)의 ‘A’ 부분에 2개의 전송 영점이 생성될 수 있다. 도 12의 경우 전송 영점이 겹쳐져서 하나로 도시되어 있다.The 21st and 22nd inductors (L21, L22) and the 11th and 12th capacitors (C11, C12) illustrated in Fig. 3 serve to create a transmission zero. Referring to Fig. 12, two transmission zeros can be created in the ‘A’ portion of the transmission zero (310). In the case of Fig. 12, the transmission zeros are overlapped and illustrated as one.

또한, 도 3에 도시된 제31 및 제32 인덕터(L31. L32), 제41 및 제42 인덕터(L41, L42), 제21 커패시터(C21), 제22 커패시터(C22) 및 제3 커패시터(C3)는 공진기를 만드는 역할을 한다. 도 12를 참조하면, 다층 필터는 ‘B’ 부분에서와 같이 3개의 공전짐을 갖는 3차 공진기(320)의 특성을 가짐을 알 수 있다.In addition, the 31st and 32nd inductors (L31, L32), the 41st and 42nd inductors (L41, L42), the 21st capacitor (C21), the 22nd capacitor (C22), and the third capacitor (C3) illustrated in Fig. 3 serve to create a resonator. Referring to Fig. 12, it can be seen that the multilayer filter has the characteristics of a third-order resonator (320) having three resonances, as in part ‘B’.

이하, 실시 예에 의한 프론트 엔드 모듈을 첨부된 도면을 참조하여 다음과 같이 설명한다.Hereinafter, a front-end module according to an embodiment is described with reference to the attached drawings.

도 13은 실시 예에 의한 프론트 엔드 모듈(200)의 블록도를 나타낸다.Figure 13 shows a block diagram of a front-end module (200) according to an embodiment.

도 13에 도시된 실시 예에 의한 프론트 엔드 모듈(200)은 안테나(210), 제1 및 제2 증폭기(220, 240), 다층 필터(220) 및 스위치(250)를 포함할 수 있다.The front-end module (200) according to the embodiment illustrated in FIG. 13 may include an antenna (210), first and second amplifiers (220, 240), a multilayer filter (220), and a switch (250).

제1 증폭기(220)는 안테나(210)를 통해 수신된 신호를 증폭시키고, 증폭된 결과를 다층 필터(220)로 제공할 수 있다. 예를 들어, 제1 증폭기(220)는 저잡음 증폭기(LNA: Low Noise Amplifier)일 수 있다.The first amplifier (220) can amplify a signal received through the antenna (210) and provide the amplified result to the multilayer filter (220). For example, the first amplifier (220) can be a low noise amplifier (LNA).

다층 필터(220)는 제1 증폭기(220)에서 증폭된 신호를 필터링하여 출력단자 OUT를 통해 출력하며, 전술한 실시 예에 의한 다층 필터(100, 100A)일 수 있으므로 중복되는 설명을 생략한다.The multilayer filter (220) filters the signal amplified by the first amplifier (220) and outputs it through the output terminal OUT. Since it may be the multilayer filter (100, 100A) according to the above-described embodiment, a duplicate description is omitted.

제2 증폭기(240)는 입력단자 IN을 통해 들어오는 신호를 증폭하고, 증폭된 결과를 안테나(210)를 통해 전송한다. 예를 들어, 제2 증폭기(240)는 전력 증폭기(PA: Power Amplifier)일 수 있다.The second amplifier (240) amplifies a signal coming in through the input terminal IN and transmits the amplified result through the antenna (210). For example, the second amplifier (240) may be a power amplifier (PA).

스위치(250)는 제1 증폭기(220)의 입력단 및 제2 증폭기(240)의 출력단 각각과 안테나 사이에 배치되어, 이들의 신호 경로를 선택하는 역할을 한다.A switch (250) is placed between the input terminal of the first amplifier (220) and the output terminal of the second amplifier (240) and the antenna, and serves to select their signal paths.

실시 예에 의하면, LCiP (Inductance & Capacitance in Package) 기술을 이용하여 프론트 엔드 모듈의 내부에 다층 필터(100, 100A)를 임베디드하고, 션트 커패시터(shunt capacitor)인 제2 커패시터(C21, C22) 및 제3 커패시턴스(C3)를 전술한 바와 같이 제11, 제12, 제2, 제31, 제32 및 제4 커패시층(CP11, CP12, CP2, CP31, CP32, CP4)과 제1 및 제2 그라운드층(GL1, GL2) 간의 기생 커패시턴스로 구현할 경우, 제2 커패시터(C21, C22) 및 제3 커패시턴스(C3)를 위한 별도의 커패시터층을 형성하지 않아도 된다.According to an embodiment, when a multilayer filter (100, 100A) is embedded inside a front-end module using LCiP (Inductance & Capacitance in Package) technology, and the second capacitor (C21, C22) and the third capacitance (C3), which are shunt capacitors, are implemented as parasitic capacitances between the 11th, 12th, 2nd, 31st, 32nd, and 4th capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) and the first and second ground layers (GL1, GL2) as described above, separate capacitor layers for the second capacitors (C21, C22) and the third capacitance (C3) do not need to be formed.

즉, 실시 예에 의한 다층 필터의 경우 제11 및 제12 커패시터(C11, C12)의 커패시턴스를 획득하기 위해 제11, 제12, 제2, 제31, 제32 및 제4 커패시터층(CP11, CP12, CP2, CP31, CP32, CP4)를 배치하며, 제11, 제12, 제2, 제31, 제32 및 제4 커패시터층(CP11, CP12, CP2, CP31, CP32, CP4)과 제1 및 제2 그라운드층(GL1, GL2) 간의 기생 커패시턴스를 이용하여 제21, 제22 및 제3 커패시터(C21, C22, C3)의 커패시턴스를 형성할 수 있다. 따라서, 제21, 제22 및 제3 커패시터(C21, C22, C3)의 커패시턴스를 형성하기 위한 별도의 커패시터층을 요구하지 않고 기생 커패시터를 이용할 수 있다. 이러한 덕택에 다층 필터(100, 100A) 또는 프론트 엔드 모듈(200)의 크기가 줄어들 수 있고, 용이하게 주파수를 튜닝할 수 있다.That is, in the case of the multilayer filter according to the embodiment, in order to obtain the capacitances of the 11th and 12th capacitors (C11, C12), the 11th, 12th, 2nd, 31st, 32nd, and 4th capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) are arranged, and the capacitances of the 21st, 22nd, and 3rd capacitors (C21, C22, C3) can be formed by utilizing the parasitic capacitances between the 11th, 12th, 2nd, 31st, 32nd, and 4th capacitor layers (CP11, CP12, CP2, CP31, CP32, CP4) and the first and second ground layers (GL1, GL2). Therefore, the parasitic capacitors can be utilized without requiring separate capacitor layers for forming the capacitances of the 21st, 22nd, and 3rd capacitors (C21, C22, C3). Thanks to this, the size of the multilayer filter (100, 100A) or front-end module (200) can be reduced, and the frequency can be easily tuned.

또한, 커패시터층을 수직으로 적층하여 이들을 연결함으로서, 한정된 크기에서 커패시턴스(예를 들어, 제1 커패시턴스)를 쉽게 증가시킬 수 있다.Additionally, by vertically stacking capacitor layers and connecting them, the capacitance (e.g., first capacitance) can be easily increased in a limited size.

또한, 인덕터층을 수직으로 적층하여 길이를 증가시킴으로서, 인덕턴스(예를 들어, 제2 인덕터의 인덕턴스)를 쉽게 증가시킬 수 있다.Additionally, by stacking the inductor layers vertically to increase the length, the inductance (e.g., the inductance of the second inductor) can be easily increased.

전술한 실시 예에 의한 다층 필터 및 프론트 엔드 모듈은 주파수 대역 6㎓ 이상인 분야에 적용될 수 있으며, 예를 들어, 텔레비젼, 모바일 기기, 불루투스, WiFi가 포함된 안테나용 모듈등에 적용될 수 있다.The multilayer filter and front-end module according to the above-described embodiment can be applied to a field having a frequency band of 6 GHz or higher, and for example, can be applied to modules for antennas including televisions, mobile devices, Bluetooth, and WiFi.

이상에서 실시 예를 중심으로 설명하였으나 이는 단지 예시일 뿐 본 발명을 한정하는 것이 아니며, 본 발명이 속하는 분야의 통상의 지식을 가진 자라면 본 실시 예의 본질적인 특성을 벗어나지 않는 범위에서 이상에 예시되지 않은 여러 가지의 변형과 응용이 가능함을 알 수 있을 것이다. 예를 들어, 실시 예에 구체적으로 나타난 각 구성 요소는 변형하여 실시할 수 있는 것이다. 그리고 이러한 변형과 응용에 관계된 차이점들은 첨부된 청구 범위에서 규정하는 본 발명의 범위에 포함되는 것으로 해석되어야 할 것이다.Although the above has been described with reference to embodiments, these are merely examples and do not limit the present invention. Those skilled in the art to which the present invention pertains will recognize that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present embodiment. For example, each component specifically shown in the embodiments can be modified and implemented. In addition, the differences related to such modifications and applications should be interpreted as being included in the scope of the present invention defined in the appended claims.

발명의 실시를 위한 형태는 전술한 "발명의 실시를 위한 최선의 형태"에서 충분히 설명되었다.The best mode for carrying out the invention has been sufficiently described in the above-mentioned “Best Mode for Carrying Out the Invention.”

실시 예의 다층 필터 및 이를 포함하는 프론트 엔드 모듈은 이동통신단말기 등에 이용될 수 있다.The multilayer filter of the embodiment and the front-end module including the same can be used in a mobile communication terminal, etc.

Claims (10)

제1 및 제2 그라운드층;First and second ground layers; 상기 제1 그라운드층과 상기 제2 그라운드층 사이에 배치된 복수의 도전 패턴층; 및A plurality of conductive pattern layers arranged between the first ground layer and the second ground layer; and 상기 제1 및 제2 그라운드층과 상기 복수의 도전 패턴층 사이에 배치된 유전층을 포함하고,A dielectric layer disposed between the first and second ground layers and the plurality of conductive pattern layers, 상기 복수의 도전 패턴층 중 인접하는 도전 패턴층은 제1 커패시턴스를 형성하는 커패시턴스 패턴층을 포함하고,Among the plurality of above-mentioned challenge pattern layers, adjacent challenge pattern layers include capacitance pattern layers forming a first capacitance, 상기 복수의 도전 패턴층 중 적어도 일부는 인덕터를 형성하는 인덕턴스 패턴층을 포함하고,At least some of the above plurality of challenge pattern layers include an inductance pattern layer forming an inductor, 상기 커패시턴스 패턴층은 상기 제1 및 제2 그라운드층 각각과 대향하여 기생 커패시턴스를 형성하고,The above capacitance pattern layer forms a parasitic capacitance facing each of the first and second ground layers, 상기 제1 커패시터와 상기 인덕터와 상기 기생 커패시턴스를 이용하여 소망하는 주파수 대역을 갖는 신호를 필터링하는 다층 필터.A multilayer filter that filters a signal having a desired frequency band by using the first capacitor, the inductor, and the parasitic capacitance. 제1 항에 있어서, 상기 커패시턴스 패턴층과 상기 인덕턴스 패턴층은 상기 다층 필터의 장축의 중심을 지나며 상기 다층 필터의 단축 방향과 나란한 가상의 수평선을 기준으로 대칭인 형상을 갖는 다층 필터.In the first paragraph, the capacitance pattern layer and the inductance pattern layer are a multilayer filter having a symmetrical shape based on an imaginary horizontal line passing through the center of the long axis of the multilayer filter and parallel to the short axis direction of the multilayer filter. 제1 항에 있어서, 상기 복수의 도전 패턴층은 상기 제1 그라운드층과 상기 제2 그라운드층 사이에서 순차적으로 적층된 제1 내지 제3 도전 패턴층을 포함하는 다층 필터.In the first paragraph, a multilayer filter including first to third conductive pattern layers sequentially laminated between the first ground layer and the second ground layer, wherein the plurality of conductive pattern layers are 제3 항에 있어서,In the third paragraph, 상기 인덕턴스 패턴층은The above inductance pattern layer 상기 제2 도전 패턴층에 배치된 제1 인덕터층;A first inductor layer disposed on the second challenge pattern layer; 상기 제2 도전 패턴층과 상기 제3 도전 패턴층에 걸쳐서 배치된 제2 인덕터층;A second inductor layer arranged across the second conductive pattern layer and the third conductive pattern layer; 상기 제1 도전 패턴층에 배치된 제3 인덕터층; 및A third inductor layer disposed on the first challenge pattern layer; and 상기 제3 도전 패턴층에 배치된 제4 인덕터층을 포함하는 다층 필터.A multilayer filter comprising a fourth inductor layer disposed on the third challenge pattern layer. 제4 항에 있어서, 상기 제1, 제2, 제3 및 제4 인덕터층 각각은 수평 방향으로 적어도 한 번 절곡된 평면 형상을 갖는 다층 필터.In the fourth paragraph, a multilayer filter in which each of the first, second, third and fourth inductor layers has a planar shape folded at least once in the horizontal direction. 제4 항에 있어서,In the fourth paragraph, 상기 커패시턴스 패턴층은The above capacitance pattern layer 상기 제2 도전 패턴층에 배치된 제1 커패시터층; 및A first capacitor layer disposed on the second challenge pattern layer; and 상기 제3 도전 패턴층에 배치되고, 상기 제1 커패시터층과 대향하여 상기 제1 커패시턴스를 형성하는 제2 커패시터층을 포함하는 다층 필터.A multilayer filter comprising a second capacitor layer disposed on the third challenge pattern layer and facing the first capacitor layer to form the first capacitance. 제6 항에 있어서,In Article 6, 상기 복수의 도전 패턴층은 상기 제3 도전 패턴층과 상기 제2 그라운드층 사이에서 순차적으로 적층된 제4 및 제5 도전 패턴층을 더 포함하는 다층 필터.A multilayer filter wherein the plurality of conductive pattern layers further include fourth and fifth conductive pattern layers sequentially laminated between the third conductive pattern layer and the second ground layer. 제7 항에 있어서,In Article 7, 상기 커패시턴스 패턴층은The above capacitance pattern layer 상기 제1 커패시터층과 연결된 제3 커패시터층; 및a third capacitor layer connected to the first capacitor layer; and 상기 제2 커패시터층과 연결된 제4 커패시터층을 더 포함하는 다층 필터.A multilayer filter further comprising a fourth capacitor layer connected to the second capacitor layer. 제8 항에 있어서,In Article 8, 상기 제1 커패시터층과 상기 제3 커패시터층을 연결하는 제1 비아; 및A first via connecting the first capacitor layer and the third capacitor layer; and 상기 제2 커패시터층과 상기 제4 커패시터층을 연결하는 제2 비아를 포함하는 다층 필터.A multilayer filter including a second via connecting the second capacitor layer and the fourth capacitor layer. 안테나;antenna; 상기 안테나를 통해 수신된 신호를 증폭시키는 제1 증폭기;A first amplifier for amplifying a signal received through the antenna; 상기 제1 증폭기에서 증폭된 신호를 필터링하여 출력하며, 제1 항 내지 제21 항 중 어느 한 항에 기재된 다층 필터;A multilayer filter that filters and outputs a signal amplified by the first amplifier, the multilayer filter according to any one of claims 1 to 21; 상기 안테나를 통해 전송할 신호를 증폭시키는 제2 증폭기; 및a second amplifier for amplifying a signal to be transmitted through the antenna; and 상기 제1 증폭기의 입력단 및 상기 제2 증폭기의 출력단 각각과 상기 안테나 사이에 배치된 스위치를 포함하는 프론트 엔드 모듈.A front-end module including a switch positioned between each of the input terminal of the first amplifier and the output terminal of the second amplifier and the antenna.
PCT/KR2024/095838 2023-05-23 2024-05-22 Multilayer filter and front end module comprising same Ceased WO2024242544A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177366A (en) * 1997-12-10 1999-07-02 Ube Ind Ltd Multilayer dielectric filter
JP2002026677A (en) * 2000-07-03 2002-01-25 Tdk Corp Layered lc high pass filter and frequency branching circuit for mobile communication unit and front end module
KR20090081221A (en) * 2008-01-23 2009-07-28 삼성전기주식회사 Wireless communication module
KR101735599B1 (en) * 2015-11-11 2017-05-16 주식회사 모다이노칩 Circuit protection device
KR20230067946A (en) * 2021-11-10 2023-05-17 주식회사 아모텍 Multilayer common mode filter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177366A (en) * 1997-12-10 1999-07-02 Ube Ind Ltd Multilayer dielectric filter
JP2002026677A (en) * 2000-07-03 2002-01-25 Tdk Corp Layered lc high pass filter and frequency branching circuit for mobile communication unit and front end module
KR20090081221A (en) * 2008-01-23 2009-07-28 삼성전기주식회사 Wireless communication module
KR101735599B1 (en) * 2015-11-11 2017-05-16 주식회사 모다이노칩 Circuit protection device
KR20230067946A (en) * 2021-11-10 2023-05-17 주식회사 아모텍 Multilayer common mode filter

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