WO2024253683A1 - Dispositifs cohérents quantiques utilisant un film mince sur une plateforme si/soi - Google Patents

Dispositifs cohérents quantiques utilisant un film mince sur une plateforme si/soi Download PDF

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WO2024253683A1
WO2024253683A1 PCT/US2023/065624 US2023065624W WO2024253683A1 WO 2024253683 A1 WO2024253683 A1 WO 2024253683A1 US 2023065624 W US2023065624 W US 2023065624W WO 2024253683 A1 WO2024253683 A1 WO 2024253683A1
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layer
doped
tio2
oxide layer
thin
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Alan DIBOS
Manish Kumar SINGH
Supratik Guha
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University of Chicago
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University of Chicago
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices

Definitions

  • next-generation technologies for quantum communication hinge on the development of a scalable platform for integrating many (e.g., thousands or millions of) qubits on a single chip. With respect to communication networks, these qubits may operate in the telecom range while exhibiting narrow optical linewidths and short radiative lifetimes.
  • issues/problems for developing a scalable platform for next-generation technologies for quantum communication For example, one issue/problem may include the difficulties and challenges associated with fabricating many devices with micrometer or nanometer scales on a chip; and/or another issue/problem may include low photo emission rates associated with long radiative lifetime for some rare earth ion defects.
  • the present disclosure describes various embodiments for a scalable quantum device and system using a thin film on silicon and/or silicon-on-insulator (Si/SOI) platform, addressing at least one of the issues/problems discussed above, providing high-quality scalable qubits and advancing the technology field in quantum memory and quantum communication.
  • Si/SOI silicon-on-insulator
  • the present disclosure relates to devices, systems, and methods for fabricating doped thin-film structures for quantum communication.
  • the present disclosure describes a device for quantum communication.
  • the device includes an insulator substrate; a thin-film structure disposed on the insulator substrate, the thin-film structure comprising: a silicon layer disposed on the insulator substrate, a first titanium dioxide (TiO2) layer disposed on the silicon layer, a second erbium-doped (Er-doped) TiO2 layer disposed on the first TiO2 layer, and a third TiO2 layer disposed on the second Er-doped TiO2 layer; and the thin-film structure comprising a photonic crystal section.
  • the present disclosure describes a system for quantum communication.
  • the system includes the device as described above and a read-write device configured to interact with the device.
  • the present disclosure describes a system for quantum memory.
  • the system includes the device as described above and a read- write device configured to interact with the device.
  • the present disclosure describes a system for quantum communication.
  • the system includes a plurality of devices, each of which according to the device described above; and one or more read-write device configured to interact with the plurality of devices.
  • the present disclosure describes a method for fabricating a device for quantum communication.
  • the method includes providing an insulator substrate; disposing a thin-film structure on the insulator substrate, by: disposing a silicon layer on the insulator substrate, disposing a first titanium dioxide (TiO2) layer on the silicon layer, disposing a second erbium-doped (Er-doped) TiO2 layer on the first TiO2 layer, and disposing a third TiO2 layer on the second Er-doped TiO2 layer; and fabricating a photonic crystal section in the thin-film structure by a lithography and etching process.
  • the present disclosure describes a method for fabricating any one of the devices and the systems as described above.
  • FIG.1A shows a schematic diagram of an example device in the present disclosure.
  • FIG.1B shows a schematic diagram of another example device in the present disclosure.
  • FIG.1C shows a schematic diagram of an example device in the present disclosure.
  • FIG.2 shows a schematic diagram of a thin-film structure in the present disclosure.
  • FIG.3A is a schematic diagram of one embodiment in the present disclosure.
  • FIG.3B is a schematic diagram for another embodiment in the present disclosure.
  • FIG.4A shows a flow diagram of an exemplary method in the present disclosure.
  • FIG.4B shows a flow diagram of another exemplary method in the present disclosure.
  • FIG.5A outlines a schematic flow of a thin film device fabrication procedure in the present disclosure.
  • FIG.5B shows a schematic diagram of coupling light with a lensed fiber into a photonic device in the present disclosure.
  • FIG.5C shows an exemplary setup for coupling a lensed fiber with a plurality of devices in the present disclosure.
  • FIG.5D shows arrays of devices in the present disclosure.
  • FIG.5E is a scanning electron microscope (SEM) image of an embodiment in the present disclosure.
  • FIG.5F is another scanning electron microscope (SEM) image of an embodiment in the present disclosure.
  • FIG.6A shows a chart of measurement data from an exemplary embodiment in the present disclosure.
  • FIG.6B shows another chart of measurement data from an exemplary embodiment in the present disclosure.
  • FIG.6C shows another chart of measurement data from an exemplary embodiment in the present disclosure.
  • FIG.7A shows a schematic diagram of one embodiment in the present disclosure.
  • FIG.7B shows a cross-section microscopy image of one embodiment in the present disclosure.
  • FIG.7C shows a simulation result of one embodiment in the present disclosure.
  • FIG.7D shows SEM image of one embodiment in the present disclosure.
  • FIG.7E shows an optical image of one embodiment in the present disclosure.
  • FIG.8A shows a schematic setep of an experimental configuration for one embodiment in the present disclosure.
  • FIG.8B shows photoluminescence spectrum of one embodiment in the present disclosure.
  • FIG.8C shows a chart of measurement result for one embodiment in the present disclosure.
  • FIG.9A shows a chart of measurement result for one embodiment in the present disclosure.
  • FIG.9B shows another chart of measurement result for one embodiment in the present disclosure.
  • FIG.9C shows another chart of measurement result for one embodiment in the present disclosure. DETAILED DESCRIPTION OF THE DISCLOSURE [0042]
  • the term “one or more” or “at least one” as used herein, depending at least in part upon context, may be used to describe any feature, structure, or characteristic in a singular sense or may be used to describe combinations of features, structures or characteristics in a plural sense.
  • terms, such as “a”, “an”, or “the”, again, may be understood to convey a singular usage or to convey a plural usage, depending at least in part upon context.
  • the term “based on” or “determined by” may be understood as not necessarily intended to convey an exclusive set of factors and may, instead, allow for existence of additional factors not necessarily expressly described, again, depending at least in part on context.
  • the present disclosure relates to methods for fabricating systems and devices for quantum communication using a thin-film on silicon-on-insulator (SOI) substrate, and systems and devices so fabricated.
  • the device may interact with optical fields provided from other optical structures; and the system may include various optical structures including optical fibers and one or more laser sources (e.g., tunable laser source or fixed wavelength laser source with a certain pulse duration and repetition rate) for various optical processing and applications and platforms, including but not limited to a scalable quantum memory platform, quantum communication, and/or quantum information processing.
  • laser sources e.g., tunable laser source or fixed wavelength laser source with a certain pulse duration and repetition rate
  • quantum communication or quantum information processing may broadly include at least one of storing quantum information, transporting quantum information, computing quantum information, reading out quantum information, initializing quantum information, controlling quantum information, or manipulating quantum information.
  • quantum information processing offers paradigm shift in communication and computing.
  • Practical quantum information processing based on optical interactions may rely on a quantum mechanical platform that simultaneously possesses long coherence times and narrow optical transitions while allowing for chip-scale integration with photonic structures.
  • Quantum memory devices are a key part of quantum information processing and quantum computing, particularly for a quantum network capable of establishing quantum entanglement-based links over long distances.
  • Quantum information may be stored at the level of a small ensemble of atoms or single atom/defects, for example, rare-earth (RE) ions defects in solids.
  • This disclosure describes example devices containing structures that provide these structural and physical characteristics suitable for practical quantum information processing. While the disclosure focuses on quantum information processing application, the devices described below are not so limited. They may be adapted to other optical processing and communications applications other than quantum information processing.
  • rare-earth (RE) ions such as erbium (Er) doped in solids, feature 4f-4f intra-shell transitions that are effectively shielded from their crystalline surroundings by closed outer shells, allowing for long spin coherence times (for example, up to 6 hours) and narrow optical transitions (for example, less than 1 kHz).
  • RE rare-earth
  • Er erbium
  • narrow optical transitions for example, less than 1 kHz
  • the rare-earth ions may refer to ions of rare-earth elements in the periodic table, which may refer to a set of seventeen metallic elements
  • solids doped with RE ions may serve as quantum device/apparatus for processing quantum information, wherein RE ions may serve as quantum bits (qubits).
  • Er doped titanium dioxide (TiO2) thin films may be selected as an exemplary platform for at least one of the following practical considerations.
  • One consideration may be that Er has its first emission in the telecom C band (1530 - 1565 nm) such that optical emission from Er qubits can be directly transmitted over existing optical fibers with minimal losses, thereby enabling long distance quantum entanglement distribution.
  • Er ions have narrow 4f-4f transitions, as the 4f shell is shielded by the full 5s and 5p levels which provides protection from the local environment, resulting in long coherence times.
  • Various embodiments disclosed below include growth of erbium doped TiO2 thin films. Some general methodology of doping and/or growing Er doped thin films are described in PCT Application PCT/US20/21257 filed on March 5, 2020 and U.S. Patent Application No.17/434,221 filed on August 26, 2021, both of which are incorporated herein by reference in their entireties.
  • Deposition of TiO2 thin film may use metal organic precursors or a metallic source of Ti (e.g., directly evaporating the metal) through at least one of the following methods, chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE).
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • MBE molecular beam epitaxy
  • the growth of TiO2 thin film under various growth conditions may result in at least one of multiple polymorphic phases, for example, an anatase phase or a rutile phase.
  • a thin film may include any type of the following types: epitaxial film, poly-crystalline film, or amorphous film.
  • a thin film may include more than one types, for example, a portion of the thin film may include one type, and another portion of the thin film may include another different type.
  • Various embodiments in the present disclosure may provide the following technology advancements and/or benefits. This is the first demonstration showing that using thin film on quantum-relevant photonic crystal cavities can be made by using a thin film grown/deposited on silicon. Various embodiments demonstrated high Q factors and Purcell enhancement, which may allow interfacing optically with the spin states and address single qubits.
  • FIGs.1A-1C show various embodiments including devices 100.
  • FIGs.1A-1C show schematic diagrams of various devices in a perspective x-z plane, wherein z may be the growth direction for various layers, and thicknesses of various layers/substrate may not be in scale.
  • the device 100 may be a device for quantum communication, which may be configured to interact with optical field for manipulating, controlling, processing, and/or reading out information in the device.
  • the device 100 may include a portion or all of the following components: a carrier wafer (e.g., silicon wafter, etc.) 110, an insulator layer/substrate (e.g., silicon dioxide, etc.) 120, a device thin layer (e.g., silicon, silicon nitride, lithium niobate, etc.) 130, a rare-earth doped oxide layer 150.
  • the device layer 130 and the rare-earth doped oxide layer 150 may be collectively called as a thin-film structure 190.
  • the doped oxide layer comprises an oxide layer doped with at least one rare-earth element (e.g., erbium).
  • the oxide layer comprises one of the following: a titanium dioxide (TiO2) layer, a cerium oxide (CeO2) layer, or a yttrium oxide (Y2O3) layer.
  • the device layer may be deposited onto the insulator layer.
  • the device layer, the insulator layer, and the carrier wafer may be referred as a single substrate.
  • more than one layer of oxide layer may be disposed on teh device layer, instead of a single rare-earth doped oxide layer as in FIG.1A.
  • the device 100 may further include a first un-doped oxide layer 140, a second rare-earth doped oxide layer 150, and a third un-doped oxide layer 160.
  • the doped oxide layer may be an oxide layer doped with at least one rare-earth element (e.g., erbium).
  • the un-doped oxide layer (140 and/or 160) may comprise one of the following: a titanium dioxide (TiO2) layer, a cerium oxide (CeO2) layer, or a yttrium oxide (Y2O3) layer.
  • the device layer 130, the first un-doped oxide layer 140, the second rare-earth doped oxide layer 150, and the third un-doped oxide layer 160 may be collectively called as a thin-film structure 190.
  • the device 100 may be a device for quantum communication, which may be configured to interact with optical field for manipulating, controlling, processing, and/or reading out information in the device.
  • the device 100 may include a portion or all of the following components: a silicon substrate 110, an insulator substrate 120 including silicon dioxide, a silicon thin layer 130, a first titanium dioxide (TiO2) layer 140, a second erbium-doped (Er-doped) TiO2 layer 150, and/or a third TiO2 layer 160.
  • FIG.1 shows a schematic diagram of the device in a perspective x-z plane, wherein z may be the growth direction for various layers, and thicknesses of various layers/substrate may not be in scale.
  • the silicon layer 130 is disposed on the silicon dioxide substrate, which is collectively called as silicon-on-isolator (SOI) substrate.
  • SOI silicon-on-isolator
  • the silicon layer 130 is disposed on the insulator substrate 120, the first titanium dioxide (TiO2) layer 140 is disposed on the silicon layer 130, the second erbium-doped (Er-doped) TiO2 layer 150 is disposed on the first TiO2 layer 140, and the third TiO2 layer 160 is disposed on the second Er-doped TiO2 layer 150.
  • the silicon layer 130, the first titanium dioxide (TiO2) layer 140, the second erbium-doped (Er-doped) TiO2 layer 150, and the third TiO2 layer 160 may be collectively called as a thin-film structure 190.
  • the present disclosure describes a device for quantum communication.
  • the device include an insulator substrate; a thin-film structure disposed on the insulator substrate, the thin-film structure comprising: a silicon layer disposed on the insulator substrate, a first titanium dioxide (TiO2) layer disposed on the silicon layer, a second erbium-doped (Er-doped) TiO2 layer disposed on the first TiO2 layer, and a third TiO2 layer disposed on the second Er-doped TiO2 layer; and the thin-film structure comprising a photonic crystal section.
  • the insulator substrate comprises a silicon dioxide (SiO2) layer; and the SiO2 layer is disposed on a silicon substrate.
  • the thin-film structure comprises a taper section configured to interact with a read-write device.
  • the read-write device comprises a lensed optical fiber configured to send an optical pulse into the thin-film structure or collect an optical signal from the thin-film structure.
  • the read-write device may include, or may be connected a portion or all of the following: a laser, one or more control electronics, microwave, and means of taking the light into an optical device (e.g., fiber coupling).
  • the photonic crystal section of the thin-film structure is configured to interact with a read-write device.
  • the read-write device comprises a grating coupler configured to couple an optical pulse into the thin-film structure or collect an optical signal from the thin-film structure.
  • the thin-film structure further comprises a first mirror section and a second mirror section, wherein the photonic crystal section is disposed between the first mirror section and the second mirror section.
  • the photonic crystal section comprises a plurality of substantially identical elliptically shaped holes disposed evenly along one direction.
  • the first mirror section comprises a first plurality of elliptically shaped holes whose sizes gradually decrease away from the photonic crystal section; and/or the second mirror section comprises a second series of elliptically shaped holes whose sizes gradually decrease away from the photonic crystal section.
  • a thickness of the insulator substrate is approximately 2 micrometers; a thickness of the silicon layer is approximate 220 nanometer; a thickness of the first TiO2 layer is approximately 7.5 nanometer; a thickness of the second Er-doped TiO2 layer is approximately 7.5 nanometer; and a thickness of the third TiO2 layer is approximately 7.5 nanometer.
  • FIG.2 shows a schematic diagram of the thin-film structure 190 in a perspective x-y plane, and size of various sections may not be in scale.
  • the thin-film structure may include a portion or all of the following sections: a photonic crystal section 210, a first mirror section 220, a second mirror section 230, and/or a taper section 240.
  • the photonic crystal section 210 may include a plurality of substantially identical elliptical holes into the TiO2 layers (including the Er- doped layer) and silicon layer.
  • the resulting periodic variation in refractive index caused by the holes prevents certain frequencies of light from propagating and creates a photonic bandgap.
  • the frequency of this bandgap may be adjusted by changing the size and the periodicity of these elliptical holes.
  • the number of elliptical holes in the photonic crystal section may be determined based on the application, for non-limiting example, 10, 20, 30, or 100.
  • the elliptical holes in the photonic crystal section may be disposed evenly along x-axis (one direction along a line).
  • the photonic crystal section 210 may be disposed between the first mirror section 220 and the second mirror section 230, which include additional elliptical holes added to the edges of the photonic crystal section that act as mirrors, forming an optical cavity that is characterized by its quality factor (Q).
  • Q quality factor
  • the elliptical holes in the mirror sections may gradually decreases their sizes away from the photonic crystal section: sizes of the elliptical holes in the first mirror section 220 decrease their sizes along negative x-direction, and sizes of the elliptical holes in the second mirror section 230 may decreases their sizes along positive x-direction.
  • the number of elliptical holes in each of the mirror sections may be determined based on the application, for non-limiting example, 3, 4, 5, 8, or 10.
  • the first mirror section and the second mirror section may be exactly mirror-image to each other, i.e., including the same number of elliptical holes that have same sizes and spacings, respectively.
  • the first mirror section and the second mirror section may be different from each other.
  • Er ions in the anatase TiO2 thin film may have a resonant frequency corresponding to an optical wavelength of approximately 1532 nanometers (nm); and Er ions in the rutile TiO2 thin film may have a resonant frequency corresponding to an optical wavelength of approximately 1520 nanometers (nm).
  • the cavities are designed to have a photonic bandgap in the frequency region of the Er: TiO2 optical transition: ⁇ 1520 nm or ⁇ 1532 nm for Er in rutile and anatase, respectively.
  • the taper section 240 may be an adiabatic taper that connects the cavities to a photonic coupling device 270.
  • the photonic coupling device 270 may be a lensed optical fiber, which can approach the edge of the thin-film structure via the taper section.
  • the photonic coupling device 270 may send light in and/or collect light coming out of the thin-film structure.
  • a grating coupler could also be used to couple to the thin-film structure.
  • the photonic crystal section of the thin-film structure is configured to interact with a read-write device.
  • the read-write device comprises a grating coupler configured to couple an optical pulse into the thin-film structure or collect an optical signal from the thin-film structure.
  • a thickness of the insulator substrate is approximate 2 micrometer; a thickness of the silicon layer is approximate 220 nanometer; a thickness of the first TiO2 layer is approximate 7.5 nanometer; a thickness of the second Er-doped TiO2 layer is approximate 7.5 nanometer; and/or a thickness of the third TiO2 layer is approximate 7.5 nanometer.
  • the second Er-doped TiO2 layer has a doping density of approximate 40 part-per-million (ppm).
  • “approximately” or “approximate” a value may refer to a range from (x-b) to (x+b), inclusive, where x is the value and b may be any number within, for non-limiting examples, 5% of the value.
  • FIG.3A shows a schematic diagram of a system 300 including a device 310 and a read-write device 320.
  • the device 310 may include any one of implementations or embodiments, or any combinations of implementations and/or embodiments as discussed in the present disclosure.
  • the read-write device 320 may include a lensed optical fiber, a grating coupler, or any other device that can optically interact with the device 310 to provide read/write functionality.
  • FIG.3B shows a schematic diagram of a system 340 including an array of devices 350 and an array of read-write devices 360.
  • the array of devices 350 may include N devices
  • the array of read-write devices 360 may include N read-write devices. Each device corresponds to each read-write device, respectively.
  • N is a positive integer, for non-limiting examples, 3, 5, 10, 100, 1000, 10,000, etc.
  • the array of devices 350 may include N devices, and the array of read-write devices 360 may include M read-write devices.
  • M is a positive integer and smaller than N.
  • the read-write device may be disposed on a high-precision movable device, so that the read-write device can interact with more than one devices sequentially.
  • M may be half of N, i.e., each read-write device can interact with two devices sequentially; or M may be a tenth of N, i.e., each read-write device can interact with ten devices sequentially; or M may be 1, i.e., a single read-write device can interact with all N devices sequentially.
  • FIG.4A shows a flow diagram of another method 400 for fabricating a device.
  • the method 400 may include a portion or all of the following: step 410, providing a substrate, the substrate comprising a device layer disposed on an insulator substrate; step 420, disposing a doped oxide layer disposed on the device layer; and step 430, fabricating a photonic crystal section in a thin-film structure by a lithography and etching process, wherein the thin-film structure comprising the device layer and the doped oxide layer.
  • the device layer comprises one of the following: a silicon layer, a silicon nitride layer, or a lithium niobate layer;
  • the doped oxide layer comprises an oxide layer doped with at least one rare-earth element; and/or the oxide layer comprises one of the following: a titanium dioxide (TiO2) layer, a cerium oxide (CeO2) layer, or an yttrium oxide (Y2O3) layer.
  • the doped oxide layer comprises: a first oxide layer disposed on the device layer, a second doped oxide layer disposed on the first oxide layer, and a third oxide layer disposed on the second doped oxide layer; and/or the second doped oxide layer comprises a second oxide layer doped with at least one rare-earth element; and/or the first, second, and third oxide layers comprise one of the following: a titanium dioxide (TiO2) layer, a cerium oxide (CeO2) layer, or a yttrium oxide (Y2O3) layer.
  • TiO2 titanium dioxide
  • CeO2 cerium oxide
  • Y2O3 yttrium oxide
  • the method 450 may include a portion or all of the following: step 460, providing an insulator substrate; step 470, disposing a thin-film structure on the insulator substrate, and/or step 480, fabricating a photonic crystal section in the thin-film structure by a lithography and etching process.
  • the step 470 may include a portion or all of the following: step 471, disposing a silicon layer on the insulator substrate; step 472, disposing a first titanium dioxide (TiO2) layer on the silicon layer; step 473, disposing a second erbium-doped (Er-doped) TiO2 layer on the first TiO2 layer; and/or step 474, disposing a third TiO2 layer on the second Er- doped TiO2 layer.
  • the method may include depositing Er: TiO2 thin films on an SOI substrate with silicon thickness of approximately 220 nm; defining patterns for a nanophotonic crystal cavity and/or waveguide structures by electron beam lithography; transferring the patterns into the TiO2 and underlying Si by plasma etching process to form the nanophotonic devices out of this heterogeneous stack (silicon/ TiO2).
  • the present disclosure describes various exemplary embodiments for devices, systems, methods of fabricating such devices or systems, using Er doped TiO2 thin films on Silicon-on-insulator. These exemplary embodiments serve as examples and/or provide more details, and do not impose any limitations to the present disclosure.
  • Next-generation technologies for quantum communication hinge on the development of a scalable platform for integrating thousands or millions of qubits on chip.
  • these qubits should operate in the telecom range while exhibiting narrow optical linewidths and short radiative lifetimes.
  • isolated atomic defects such as the rare earth ion erbium
  • these intra-4f radiative lifetimes are long, resulting in low photon emission rates.
  • this challenge may be addressed using Purcell enhancement by fabricating optical cavities milled into bulk host crystals or by stamping photonic cavities onto the bulk crystal surface.
  • these approaches are not inherently amenable to fabricating many identical devices on a chip.
  • photonic devices may be fabricated using high- quality erbium-doped TiO2 thin films grown by molecular beam epitaxy (MBE). TiO2 films were grown directly on SOI substrates. The TiO2 films are polycrystalline, exhibiting small crystalline grains. By tuning the growth conditions with lower or higher temperature, the phase of the TiO2 films may be controlled to be predominately anatase or rutile, respectively.
  • MBE molecular beam epitaxy
  • the Er optical linewidths may be controllably tuned by (a) adding undoped layers as bottom buffers or top capping layers and/or (b) controlling the thickness and concentration of the doped film itself.
  • to use individual Er 3+ ions as a quantum memory light-matter interactions are enhanced for improving at least one of the following: optical addressing, readout, and/or overall photon count rates.
  • the heterostructured films on silicon may be scalable to be fabricated into integrated nanophotonic devices.
  • FIG.5A outlines a schematic flow of the thin film-nanophotonic device fabrication procedure.510 shows an SOI substrate with silicon thickness of approximately 220 nanometer (nm).
  • FIG.5B shows a schematic diagram of coupling light with a lensed fiber into the photonic devices.
  • the Er doped thin film may have a length of approximately several micrometers along a direction of 520 and may have a width of approximately 100s of nanometers along a direction of 522.
  • FIG.5C shows a setup that couples a lensed fiber with fabricated photonic devices, wherein on the left side, multiple devices are separated by approximately 5 micrometers (um) in a vertical direction.
  • FIG.5D shows arrays of photonic crystal cavities fabricated using thin film on SOI platform (Er doped TiO2 on SOI).
  • the silicon nanophotonic devices, for which and a scanning electron microscope (SEM) image is shown in FIG.5E consist of two key regions as shown in FIG.5F: (i) the one-dimensional (1D) photonic crystal cavity and (ii) the tapered waveguides for edge coupling.
  • the first section consisting of 1D cavities are created by etching elliptical holes into the TiO2/Si.
  • the resulting periodic variation in refractive index caused by the holes prevents certain frequencies of light from propagating and creates a photonic bandgap.
  • the frequency of this bandgap is engineered by adjusting the size and the periodicity of these elliptical holes. Additional holes added to the edges of the photonic crystal region act as mirrors, forming an optical cavity that is characterized by its quality factor (Q).
  • the cavities are designed to have a photonic bandgap in the frequency region of the Er: TiO2 optical transition: ⁇ 1520 nm or ⁇ 1532 nm for Er in rutile and anatase, respectively.
  • the second section of the waveguide is an adiabatic taper that connects the cavities to the photonic coupling region. Following fabrication, the chips are cleaved perpendicular to the waveguide. This configuration enables a lensed optical fiber to approach the edge of the chip and send light in/collect light coming out of the nanophotonic devices.
  • a grating coupler could also be used to couple to the active region of the device described in (i).
  • FIG.5E shows scanning electron micrograph of fabricated Er: TiO2 nanophotonic devices on SOI, wherein an upper inset shows a magnified view of the photonic crystal cavity region.
  • FIG.5F shows that the device includes two regions (i) the photonic crystal (1D cavity) region and (ii) an adiabatic taper that connects the photonic crystal to a lensed fiber via edge coupling.
  • the Er: TiO2 optical transitions evanescently couple into the cavity mode. This coupling, along with the cavity’s photonic bandgap alters the density of final photonic states in the cavity and enhances the Er optical spontaneous emission rate.
  • the Purcell factor is described phenomenologically by the Purcell factor as below equation wherein Q is the quality factor, ⁇ is the free space wavelength of light, ⁇ is the refractive index of the cavity medium, and ⁇ ⁇ is the mode volume of the cavity.
  • some fabricated devices are designed with certain parameters (e.g., films thickness, photonic crystal, etc.), so as to exhibit small mode volumes and high Q factors (up to 105), indicating that optical losses are small due to TiO2 film or edge wall roughness, and enabling large Purcell factors.
  • the cavity Q is measured by probing the dip in reflected intensity of light in the cavity as the wavelength is changed and fitting this dip with a Lorentzian function.
  • FIG.6A shows a cavity with a Q of approximately 60,000.
  • Purcell enhancement of the Er emitters may be probed by measuring the change in their optical lifetime as the excitation laser frequency is brought into resonance with the cavity/emitter.
  • FIG.6B shows a Purcell enhancement of approximately 60 as the Er lifetime is decreased from 1.7 millisecond to 30 microsection ( ⁇ s). These Purcell-enhanced optical lifetimes may be limited by the emitter homogeneous linewidths. This materials platform and unique integration directly with Si photonics represents a significant step forward towards realizing quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
  • FIG.6A shows a reflection measurement of a TiO2/Si nanophotonic cavity device with a Q-factor of ⁇ 60,000.
  • FIG.6B shows a measured optical lifetime of Er: TiO2 decreases by a factor of 60 from ⁇ 1.7ms to 30 ⁇ s when the cavity is brought into resonance.
  • FIG.6C shows off-resonant photoluminescence measurements (1475 nm pump) at 3K show that in waveguide devices: Rutile transition near 1520 nm is broader than it’s desired ( ⁇ 30 GHz), Anatase transitions (>1530 nm) are even broader with some power dependence to various spectral lines (e.g. dashed arrow).
  • Isolated atomic defects in crystals are ideal quantum photon emitters and spin qubits with an optical interface; however, the brightest of these defect qubits often have optical transitions outside telecom wavelengths, limiting their direct use for long distance quantum network protocols due to large fiber propagation losses outside of the telecom range. Meanwhile, defects with telecom optical transitions such as erbium typically have long radiative lifetimes and thus low photon emission rates.
  • the present disclosure describes various embodiment including a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates.
  • one-dimensional photonic crystal cavities may be fabricated, demonstrating quality factors in excess of 5 ⁇ 10 4 and corresponding Purcell- enhanced optical emission rates of the erbium ensembles in excess of 200.
  • the fabricated platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
  • Rare earth ion defects in solid-state hosts are key candidate qubits for applications in quantum computing and communication owing to their inherent spin- photon interface and long coherence times. These properties have enabled critical demonstrations of quantum memory protocols based on light-matter entanglement and entanglement distribution.
  • Quantum technologies that focus on the distribution of quantum information over long distances, in particular, require qubits that interface with photons in the telecom optical range to avoid huge propagation losses over long-distance optical fiber networks. Because of its optical transition that lies in the telecom C-band, there has been a renewed interest in using erbium ions as optically- addressable quantum memories using persistent spectral hole burning techniques and spin-based quantum memories in quantum communication, including at the level of single ions. However, significant engineering steps are needed to enhance the low photon emission rate from an individual rare earth ion, which tends to have a long radiative lifetime. [00104] In some implementations, a key way to reduce the radiative lifetime is to use an optical cavity to enhance the emission through the Purcell effect.
  • These approaches are all appealing because they leverage the generally good performance of well-studied host materials for Er 3+ (Y2SiO5, YVO, CaWO4) with separate optical cavities.
  • these approaches have led to important cutting-edge demonstrations towards single rare-earth ion quantum memories, including single-shot readout.
  • some work shows Er-doped TiO2 thin films growth on Si substrates via molecular beam epitaxy (MBE), and those TiO2 thin films may be polycrystalline and the dominant TiO2 phase (rutile or anatase) may be tuned by varying the substrate temperature during growth. Furthermore, the inhomogeneous linewidths for the best buffered devices may be as low as 5 GHz, which may be substantially narrower than some of the epitaxial thin film control samples grown on better lattice-matched substrates. [00107] The present disclosure describes methods of top-down nanofabrication of photonic crystal cavities comprised of thin layers of Er-doped TiO2 grown directly atop silicon films.
  • the thin films may include an Er-doped TiO2 heterostructure grown on commercial SOI substrates with a Si device layer thickness of approximately 220 nm atop an approximately 2 ⁇ m buried oxide. Within each TiO2 film, there are three TiO2 layers of substantially equal thickness: an erbium-doped layer sandwiched between undoped top and bottom buffer layers. Each layer is approximately 7.5 nm, giving a total film thickness of approximately 22 nm, as shown in FIG.7A. The estimated Er density within the doped layer is approximately 40 ppm. The TiO2 layers for this sample are grown at a substrate temperature of 520 °C.
  • TEM cross section imaging reveals that the TiO2 layer is polycrystalline, and there is modest oxide layer at the TiO2/Si interface.
  • the polycrystalline film has both large and small grains visible, and the grains nearest the Si interface are bigger ( ⁇ 10 nm) than those near the top of the TiO2 layer ( ⁇ 1 nm).
  • the roughness of the top surface of the TiO2 is approximately 1 nm according to the cross-sectional TEM.
  • 3D finite-difference time-domain
  • FIG.7C shows the computed fundamental (dielectric) mode with a predominant TE-like polarization in the plane of the TiO2 film.
  • the photonic crystal devices include a waveguide with identical, elliptically shaped holes and a parabolic reduction of the lattice constant to generate a defect in the photonic bandgap. There are additional mirror holes added on the side of the cavity opposite the coupling waveguide (Fig.7D, bottom).
  • the photonic crystal cavities are patterned via conventional electron-beam lithography and dry etching through the TiO2 and Si device layers. After etching and hardmask removal, the waveguide is cleaved, along the segment. The taper is disposed at the edge of the chip (FIG.7D, top).
  • FIG.7A-7E show Er-doped TiO2 on SOI device platform.
  • FIG.7A shows schematic of Er-doped TiO2 heterostructure. The Er 3+ doped layer is sandwiched between nominally undoped layers.
  • FIG.7B shows cross-section TEM image of polycrystalline TiO2 film atop the Si layer. A modest SiOx layer of approximate 2 nm thickness develops at the interface during the MBE growth.
  • FIG.7C shows FDTD simulation of the normalized electric field confinement for a dipole oriented normal to the waveguide and the plane of the TiO2 film, located 10 nm above the surface of the Si. Strong electric field confinement in the photonic crystal cavity defect is generated by a parabolic taper of the lattice constant of the elliptically shaped holes. Additional mirror holes are included on the left hand side of the device because all measurements are performed in a one-sided reflection configuration.
  • FIG.7D shows, at the top, SEM image of an entire fabricated device showing the tapered waveguide extending from the cleanly cleaved edge of the SOI chip; and at the bottom, an expanded view of the parabolic taper in the lattice constant to generate the cavity defect.
  • FIG.7E shows an optical image showing an extended view of nearly identical devices in the cluster containing those in FIG.7D.
  • a schematic of an experimental setup to measure these devices is shown in FIG.8A.
  • the sample is fixed to the cold finger and the lensed fiber is mounted on a 3-axis nano-positioner to enable addressing of different devices.
  • devices are primarily probed with pulse lengths ranging from 1 to 1000 ⁇ s and wait times after the pulse is sufficient to enable decay of the emission.
  • the pulses are routed to the sample via a fiber circulator and polarization controller to match the polarization of the cavity mode.
  • the fluorescence from the sample are measured, back through the lensed fiber and circulator, and directed to either a superconducting nanowire single photon detector (SNSPD), a spectrometer with InGaAs camera, or a photodiode.
  • SNSPD superconducting nanowire single photon detector
  • a spectrometer with InGaAs camera or a photodiode.
  • the one-way coupling efficiency is fairly poor at approximately 15%, but it is sufficient to probe these particular devices because of the relatively large number of ions in the cavity-coupled ensembles.
  • There is a fiber wavelength de- multiplexer that can be added into the path of port 2 of the circulator to perform off- resonant photoluminescence (PL) measurements using a 1480 nm diode laser.
  • Off- resonant PL measurements on a waveguide-only sample reveal a variety of peaks from 1520 nm to 1560 nm, as shown in FIG.8B.
  • the largest peak near 1520.5 nm is attributed to substitutional Er in the rutile phase of TiO2, whereas the other dominant peak near 1533 nm is attributed to substitutional Er in anatase, as confirmed with electron diffraction measurements.
  • This particular sample is polyphase, which includes TiO2 thin films grown at intermediate temperatures. The specific intensity of the substitutional rutile transition compared to the substitutional anatase one, is much stronger in this sample than previous thin film results when grown near 520°C.
  • Resonant laser pulsed photoluminescence excitation (PLE) measurements near 1520.56 nm are performed using a continuous wave (CW) laser and modulated into 0.1 ms pulses with emission from the Er 3+ collected integration window following each pulse.
  • the approximate PLE linewidth for this transition is similar inhomogeneous linewidth of 0.4 nm (FIG.8B, inset).
  • a phase modulator may be used to generate two sidebands each with a frequency detuning ( ⁇ ) from the carrier frequency.
  • ⁇ is larger than the spectral diffusion linewidth of the erbium ions, saturation is reduced and the fluorescence increases.
  • HWHM half width half maximum
  • FIGs.8A-8C show optical characterization of Er 3+ : TiO2 on Si waveguides.
  • FIG.8A shows schematic of the experimental configuration.
  • a tunable laser in combination with three fiber-coupled acousto-optic modulators enable the production of short pulses of light that are directed to the sample through a lensed fiber to the edge of the chip.
  • the return light can be routed to either a photodiode (PD), IR spectrometer (Spec), or superconducting nanowire single-photon detector (SNSPD).
  • a fiber polarization controller FPC is used to rotate the polarization to match that of the cavity.
  • Optional components such as an electro-optic phase modulator ( ⁇ EOM) may be inserted to generate sidebands for transient spectral hole burning and a fiber wavelength demultiplexer (WDM) for off-resonant excitation.
  • FIG. 8B shows photoluminescence spectrum of a waveguide (non-cavity) device pumped with 1480 nm laser light and detected via spectrometer.
  • the tallest peak (highlighted in yellow) is centered at 1520.56 nm and originates from Er 3+ in the rutile phase of polyphase TiO2.
  • Inset A resonant laser scan showing a similar inhomogeneous linewidth of 0.4 nm (65 GHz) for the rutile peak.
  • FIG.8C shows measurement of the spectral diffusion linewidth for the rutile transition at 1520.56 nm.
  • the inverted Lorentzian fit (dashed magenta line) yields a spectral diffusion linewidth of 267 ⁇ 17 MHz.
  • Various embodiments include the ability to tune the cavity resonance in- situ using controlled gas adsorption/desorption while the sample is cold inside the cryostat.
  • N2 condensation may be used via a gas nozzle directed at the sample to deposit thin layer of ice on the cavity which increases the refractive index of the mode, thereby resulting in a red shift of its resonance.
  • the ice may be deterministically desorbed through localized heating, by using a relatively strong laser excitation ( ⁇ 10 ⁇ W ) tuned directly to the cavity [00115] resonance to induce two-photon absorption and heating in the Si, but only at the cavity region, which leads to a blue shift of the cavity resonance.
  • ad cavity quality factors may be near 5 ⁇ 10 4 .
  • a prototypical reflection scan of a cavity is shown in FIG.9A. Through the use of control devices with and without TiO2 films, it may be believed that the quality factors are currently limited by scattering due to the roughness of the TiO2 rather than sidewall roughness from the dry etching.
  • resonant pulsed laser measurements reveal the optical lifetime of all of the ions that couple to the device, which includes ions well- coupled to the cavity, ions poorly coupled to the cavity—whether because of position or polarization—and those that couple only to the bare waveguide.
  • a stretched exponential function is used to capture the variety of decay times, where the time constant ( ⁇ ) in the fit represents the fastest time decay within the ensemble.
  • a systematic redshift of the cavity resonance is performed via gas condensation across the rutile transition.
  • FIG.9C shows the increase in decay rate relative to the natural decay rate as the cavity resonance sweeps across the Er:rutile transition.
  • the line shape of the cavity-enhanced emission is Lorentzian and its linewidth agrees fairly well with that of the cavity linewidth measured via reflection.
  • the full width half maximum (FWHM) of the cavity linewidth measured in FIG.9A is 3.71 ⁇ 0.17 GHz and is modestly narrower versus that of the full Purcell versus detuning enhancement curve (FIG.9C) of 5.06 ⁇ 0.17 GHz.
  • FIGs.9A-9C shows purcell enhancement of Er 3+ : TiO2 ensembles on Si photonic crystal cavities.
  • FIG.9B shows a comparison of the ensemble lifetime of Er 3+ ions coupled to a waveguide only (upper right points) as compared with cavity coupled (lower left points), showing a 200-fold reduction in the decay rate.
  • FIG.9C shows a plot of the increase in the ensemble decay rate as a function of the cavity-laser detuning ( ⁇ ) when the laser is fixed at 1520.56 nm.
  • the decay rate enhancement line-shape is also fit to a Lorentzian with a FWHM linewidth of 5.06 ⁇ 0.17 GHz, in fairly good agreement with the cavity reflection spectrum.
  • the present disclosure describes various embodiments for optical addressing of Er 3+ ions in rutile phase TiO2 grown on commercial SOI wafers. Top- down 1D photonic crystal cavities are fabricated using the TiO2 heterostructure with Purcell enhancements up to 200. Purcell spectroscopy measurements and a close matching of the Purcell enhancement to the Lorentzian cavity line shape indicate the erbium emitter rates are limited by the cavity quality factors, not by the emitter homogeneous linewidth.
  • This demonstration represents an exciting first step towards scalable quantum memory devices grown on an SOI wafer.
  • optimization to this platform is done to reduce the broadening in this system.
  • the current upper bound of the homogeneous linewidth and spectral diffusion is estimated in the range of a few hundred MHz, which indicates a large amount of broadening in this sample.
  • Such broadening can be attributed to a variety of factors, including the interfacial oxide and fabrication induced damage, as well as presence of mixed phases of TiO2.
  • Further optimization of the thin film growth conditions, buffer layer thicknesses, and cavity etch chemistry could enable further reductions of spectral diffusion and the homogeneous linewidth.
  • Additional improvements to the homogeneous linewidth may also be achieved naturally with the reduction in the Er doping density needed to address single ions. Controlled doping densities below 1 ppm at a specified depth in the film may be easier to achieve with this platform than in the more common yttrium-containing oxides due to the naturally low abundance of lanthanides present in Ti precursors.
  • additional device improvements may need to be made. Most notably, the current fiber- waveguide coupling efficiency may need to be increased using waveguide cladding layers or undercut of the Si waveguides from the buried oxide.
  • this Er-doped TiO2-on-SOI platform may form the basis for scalable quantum memory devices.
  • This telecom-ready device architecture may enable facile integration with other needed photonic elements such as on-chip filters, phase shifters, beam splitters, SNSPDs, and microwave-to-optical transducers in scalable quantum communication devices.
  • TiO2 thin films are grown on diced pieces from 8” commercial SOI wafers (SOITEC), and the Si device layer is lightly boron-doped with a resistivity of 10 ⁇ cm.
  • SOITEC commercial SOI wafers
  • the metallic Er source temperature is at 900° C, with a predicted flux to give an expected doping density of roughly 40 ppm of Er 3+ , to be later confirmed with secondary ion mass spectrometry.
  • Device patterning is performed using electron beam lithography (e.g., JEOL 8100).
  • the etch mask is a combination of electron-beam resist and PECVD SiO2 hardmask.
  • Fluorine-based etching is used for mask-transfer to the SiO2, chlorine-based etching is used to etch through the TiO2 layers, and HBr/O2 is used to etch through the Si device layer. All etching is performed in an ion etcher (e.g., Oxford PlasmaLab 100 ICP reactive ion etcher). For TEM analysis the other side of the cleaved sample was thinned using ion milling and measured in a TEM. [00125] In some implementations, measurements are performed in a cryostat (e.g., Montana Instruments S100 closed-cycle cryostat).
  • a cryostat e.g., Montana Instruments S100 closed-cycle cryostat.
  • the AR coated SMF-28 lensed fiber (e.g., TSMJ-X-1550-9/125-0.25-20-2.5-14-3-AR, OZ optics) is mounted on an Attocube nanopositioner with 5 mm of x-y-z travel.
  • the base temperature of the cold finger directly underneath the sample is measured to be 3.1 K.
  • Resonant experiments are performed with a tunable telecom laser (e.g., CTL 1550, Toptica).
  • the wavemeter used for wavelength measurement is a High Finesse WS-8-10 with HF-1532NM calibration laser.
  • the one-way coupling efficiency is estimated by measuring the ratio of the reflected laser power from a cavity device slightly off resonance to the laser power into the lensed fiber.
  • the efficiency estimate of 15% encompasses all losses from input of lensed fiber outside of the cryostat to the cavity itself including bend losses as the fiber is routed inside the cryostat, scattering along the inverse taper on the waveguide, and the fiber-waveguide coupling itself.
  • the waveguide be sufficiently wide to enable guiding
  • the mode mismatch between the waveguide and optical spot ( ⁇ 2.5 ⁇ m) of the lensed fiber is currently the source of insertion loss.
  • pulses used for resonant laser pumping are generated with fiber acousto-optic modulators, AOMs (e.g., FiberQ, Gooch and Housego). The on/off ratio of these three modulators is greater than 150 dB.
  • the typical pulses for waveguide only devices are 0.1-1 ms long with collection times of 10-40 ms.
  • Typical pulses for cavity coupled ions are 1-10 ms long with collection times of 1-4 ms.
  • the phase electro-optic modulator e.g., iXblue MPZ-LN-10) is driven with a vector signal generator (e.g., SG-396, SRS) used for sideband generation at a specified detuning from the laser carrier frequency.
  • a vector signal generator e.g., SG-396, SRS
  • Single photon detection was performed with a SNSPD (e.g., from Quantum Opus) inside a second cryostat, which is designed for operation near 1550 nm with a dark/background count rate of 50 Hz and external quantum efficiency of 79%.
  • An additional fiber AOM is used to protect the SNSPD from direct laser exposure to mitigate transients in the detector signal.
  • Single photon counting is performed using a dedicated time tagger (e.g., quTAG, qutools).
  • Two voltage controlled attenuators are used in series to control the incident laser power (e.g., V1550PA, Thorlabs) both for resonant experiments as well as in-situ resonant laser cavity tuning. It is important to note that the fiber circulator is particularly useful because it allows for sufficiently high powers to enable resonant laser tuning (2-photon absorption in Si) of the cavity without an additional amplifier.
  • off-resonant PL measurements can be performed with a laser (e.g., QFBGLD-1480-300 diode pump laser from QPhotonics), and erbium PL was detected after long-pass filtering (e.g., FELH1500, Thorlabs) inside a spectrometer (e.g., IsoPlane SCT320, Princeton Instruments) equipped with a PylonIR liquid-nitrogen cooled InGaAs camera.
  • the resolution of the spectrometer using a 600 grooves/mm grating is ⁇ 0.1 nm as confirmed by measuring a narrow linewidth laser.

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Abstract

La divulgation concerne des dispositifs, des systèmes et des procédés de fabrication de structures à couches minces dopées pour une communication quantique. Le dispositif comprend un substrat isolant ; une structure de film mince disposée sur le substrat isolant, la structure de film mince comprenant : une couche de dispositif disposée sur le substrat isolant, et une couche d'oxyde dopée disposée sur la couche de dispositif ; et la structure de film mince comprenant une section de cristal photonique.
PCT/US2023/065624 2022-04-11 2023-04-11 Dispositifs cohérents quantiques utilisant un film mince sur une plateforme si/soi Ceased WO2024253683A1 (fr)

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Citations (7)

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Publication number Priority date Publication date Assignee Title
US20060245464A1 (en) * 2005-04-28 2006-11-02 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
WO2014165039A1 (fr) * 2013-03-13 2014-10-09 Seagate Technology Llc Laser a semi-conducteurs ayant une couche de cathode metallique disposee dans une region de tranchee
US20170199037A1 (en) * 2014-10-02 2017-07-13 Faquir Chand Jain Fiber Optic Gyroscope With Integrated WaveGuide Couplers and Opto-Electronic Devices
US20180330266A1 (en) * 2015-11-27 2018-11-15 Qoherence Instruments Corp. Systems, devices, and methods to interact with quantum information stored in spins
US20200028323A1 (en) * 2017-02-28 2020-01-23 Hewlett Packard Enterprise Development Lp Quantum-dot photonics
WO2020181131A1 (fr) * 2019-03-05 2020-09-10 The University Of Chicago Technologies de films minces dopés aux ions de terres rares
WO2021030724A1 (fr) * 2019-08-15 2021-02-18 The University Of Chicago Systèmes dopés aux terres rares hétérogènes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060245464A1 (en) * 2005-04-28 2006-11-02 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
WO2014165039A1 (fr) * 2013-03-13 2014-10-09 Seagate Technology Llc Laser a semi-conducteurs ayant une couche de cathode metallique disposee dans une region de tranchee
US20170199037A1 (en) * 2014-10-02 2017-07-13 Faquir Chand Jain Fiber Optic Gyroscope With Integrated WaveGuide Couplers and Opto-Electronic Devices
US20180330266A1 (en) * 2015-11-27 2018-11-15 Qoherence Instruments Corp. Systems, devices, and methods to interact with quantum information stored in spins
US20200028323A1 (en) * 2017-02-28 2020-01-23 Hewlett Packard Enterprise Development Lp Quantum-dot photonics
WO2020181131A1 (fr) * 2019-03-05 2020-09-10 The University Of Chicago Technologies de films minces dopés aux ions de terres rares
WO2021030724A1 (fr) * 2019-08-15 2021-02-18 The University Of Chicago Systèmes dopés aux terres rares hétérogènes

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