WO2024254847A1 - 一种晶圆表面大颗粒检测方法 - Google Patents

一种晶圆表面大颗粒检测方法 Download PDF

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WO2024254847A1
WO2024254847A1 PCT/CN2023/100685 CN2023100685W WO2024254847A1 WO 2024254847 A1 WO2024254847 A1 WO 2024254847A1 CN 2023100685 W CN2023100685 W CN 2023100685W WO 2024254847 A1 WO2024254847 A1 WO 2024254847A1
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wafer
chamber
large particles
test machine
machine
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French (fr)
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蒋鹏
濮伟丰
张路平
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Beijing Advanced Memory Technology Co Ltd
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Beijing Advanced Memory Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

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  • the present invention relates to the field of semiconductor integrated circuit manufacturing, and in particular to a method for detecting large particles on a wafer surface.
  • an abnormality occurs in the chamber of a machine
  • defects may occur on the surface of the wafer when the chamber is used to process the wafer, such as large particles on the surface of the wafer, which will cause the chip where the large particles are located to be scrapped, resulting in a decrease in yield.
  • the machine used includes multiple chambers. When the PVD process is performed, the wafer needs to enter multiple chambers in sequence. When a large particle defect occurs, it is often difficult to determine which chamber has the abnormality. Therefore, a method for detecting large particles on the surface of a wafer is needed that can accurately and efficiently determine which chamber of the machine has the abnormality, so as to promptly process the abnormal chamber.
  • the present invention aims to provide a method for detecting large particles on the surface of a wafer.
  • the equipment used in the method includes: a physical vapor deposition machine and a large particle detector, the physical vapor deposition machine includes: a first chamber for removing water vapor from the wafer surface, and a second chamber for forming a thin film layer, and the large particle detection method on the wafer surface includes:
  • a first moisture removal step placing a first test machine wafer into a first chamber of the physical vapor deposition machine, irradiating the first test machine wafer with a light bulb in the first chamber, thereby removing moisture from the surface of the first test machine wafer, and extracting the moisture from the first chamber;
  • Deposition step placing the first test machine wafer into the second chamber of the physical vapor deposition machine, and forming a thin film layer on the upper surface of the first test machine wafer;
  • the first detection step detecting the first test machine wafer by the large particle detector to confirm whether there are large particles on the surface of the first test machine wafer, and if there are large particles, analyzing the chemical composition of the large particles;
  • a second water vapor removal step placing the second test machine wafer into the first chamber of the physical vapor deposition machine, irradiating the second test machine wafer with a light bulb in the first chamber, thereby removing water vapor on the surface of the second test machine wafer, and extracting the water vapor from the first chamber;
  • a second detection step detecting the second test machine wafer by the large particle detector to confirm whether there are large particles on the surface of the second test machine wafer, and if there are large particles, analyzing the chemical composition of the large particles;
  • Determining step determining the reason for the existence of the large particles based on the results of the first detecting step and the second detecting step.
  • the wafer surface large particle detection method of the present invention can accurately and efficiently determine which chamber of the machine has an abnormality, so that the abnormal chamber can be processed in a timely manner.
  • FIG1 is a schematic diagram of a PVD machine used in the wafer surface large particle detection method of the present invention.
  • FIG. 2 is a flow chart of a method for detecting large particles on a wafer surface according to the present invention.
  • the large particle detection method on the wafer surface of the present invention is described below with reference to FIGS. 1 and 2 .
  • the equipment used in the wafer surface large particle detection method of the present invention includes: a PVD (physical vapor deposition) machine 100 and a PMD (large particle detector) (not shown).
  • the PVD machine 100 includes: a first chamber F2 for removing moisture from the wafer surface, and a second chamber R3 for forming a thin film layer.
  • the PMD is KLA 8920 of KLA Corporation (KLA). In other embodiments, the PMD may also be other models of machines.
  • the PVD machine 100 may be any model of machine commonly used in the art.
  • the wafer surface large particle detection method of the present invention comprises: a first water vapor removal step S001, a deposition step S002, a first detection step S003, a second water vapor removal step S004, a second detection step S005 and a judgment step S006. Each step will be described in detail below.
  • the first moisture removal step S001 placing the first test wafer into the first chamber F2 of the PVD machine 100, irradiating the first test wafer with the light bulb of the first chamber F2, thereby removing moisture on the surface of the first test wafer, and extracting the moisture from the first chamber F2.
  • Deposition step S002 Place the first test machine wafer into the second chamber R3 of the PVD machine 100, and form a thin film layer on the upper surface of the first test machine wafer.
  • a phase change material thin film layer is formed on the upper surface of the first test machine wafer.
  • other thin film layers may also be formed.
  • the thin film layer may be formed by a method commonly used in the art, which will not be described in detail here.
  • the first detection step S003 detect the first test machine wafer through PMD to confirm whether there are large particles on the surface of the first test machine wafer. If there are large particles, analyze the chemical composition of the large particles.
  • large particles refer to particles with a size greater than 5 microns. After detection, large particles exist on the surface of the first test machine wafer. And after analysis, the main component of the large particles is Ti (titanium). However, there should be no Ti in the first chamber F2 and the second chamber R3, so it is judged that the first chamber F2 or the second chamber R3 has an abnormality.
  • test wafer only enters the first chamber F2.
  • Second moisture removal step S004 Place the second test wafer into the first chamber F2 of the PVD machine 100, and illuminate the second test wafer with the light bulb of the first chamber F2, so as to remove moisture on the surface of the second test wafer, and extract the moisture from the first chamber F2.
  • Second detection step S005 Detect the second test machine wafer through PMD to confirm whether there are large particles on the surface of the second test machine wafer. If there are large particles, analyze the chemical composition of the large particles.
  • Wafer F2 R3 Large particle quantity First test machine wafer ⁇ ⁇ 1 piece Second test machine wafer ⁇ 1 piece
  • Determination step S006 According to the results of the first detection step S003 and the second detection step S005, determine the reason for the existence of large particles.
  • the second tester wafer only entered the first chamber F2, and large particles were also detected on the surface of the second tester wafer, and the main component of the large particles was also Ti, which should not be in the first chamber F2, it was determined that the first chamber F2 was abnormal. Therefore, the first chamber F2 needs to be maintained.
  • the spare first chamber F3 can be used for another test. That is, first place the third test machine wafer in the spare first chamber F3 to remove moisture from the surface of the third test machine wafer. Then place the third test machine wafer in the second chamber R3 to form a thin film layer on the upper surface of the third test machine wafer. Then use the PMD machine to test the third test machine wafer. If no large particles are detected, it means that the first chamber F2 is indeed abnormal.
  • the method for detecting large particles on the wafer surface of the present invention further includes:
  • the first chamber F2 can be maintained by a commonly used method in the art, which will not be described in detail here.
  • the large particle detection method on the wafer surface of the present invention can accurately and efficiently determine which chamber of the machine has an abnormality, so that the abnormal chamber can be processed in time.

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

本发明提供一种晶圆表面大颗粒检测方法，属于集成电路制造领域。该方法包括：第一水气去除步骤：将第一测机晶圆放入第一腔室，去除第一测机晶圆表面的水气；沉积步骤：将第一测机晶圆放入第二腔室，在第一测机晶圆的上表面形成薄膜层；第一检测步骤：确认第一测机晶圆的表面是否存在大颗粒，如果存在大颗粒，则分析大颗粒的化学成分；第二水气去除步骤：将第二测机晶圆放入第一腔室，去除第二测机晶圆表面的水气；第二检测步骤：确认第二测机晶圆的表面是否存在大颗粒；以及判断步骤：判断存在大颗粒的原因。通过本发明的晶圆表面大颗粒检测方法，可以准确高效的判断机台的哪个腔室出现了异常，从而可以及时地对出现异常的腔室进行处理。

Description

一种晶圆表面大颗粒检测方法 技术领域
本发明涉及半导体集成电路制造领域，尤其涉及一种晶圆表面大颗粒检测方法。
 背景技术
在半导体集成电路制造过程中，如果某个机台的腔室出现异常，则在使用该腔室处理晶圆时，就可能会导致晶圆表面出现缺陷，例如晶圆的表面出现大颗粒，这样会导致大颗粒所在处的芯片报废，从而造成良率的下降。并且在某些工艺中，例如PVD（物理气相沉积）工艺，其使用的机台包括多个腔室，在进行PVD工艺时，晶圆需要依次进入多个腔室。当出现大颗粒缺陷时，往往很难判断到底是哪个腔室出现了异常。因此，需要一种能够准确高效的判断机台的哪个腔室出现异常的晶圆表面大颗粒检测方法，以便及时对出现异常的腔室进行处理。
 技术问题
本发明旨在提供一种晶圆表面大颗粒检测方法。
 技术解决方案
所述方法使用的设备包括：物理气相沉积机台和大颗粒检测仪，所述物理气相沉积机台包括：用于去除晶圆表面水气的第一腔室，以及用于形成薄膜层的第二腔室，所述晶圆表面大颗粒检测方法包括：
第一水气去除步骤：将第一测机晶圆放入所述物理气相沉积机台的第一腔室，用所述第一腔室的灯泡照射所述第一测机晶圆，从而去除所述第一测机晶圆表面的水气，并且将所述水气从所述第一腔室中抽出；
沉积步骤：将所述第一测机晶圆放入所述物理气相沉积机台的第二腔室，在所述第一测机晶圆的上表面形成薄膜层；
第一检测步骤：通过所述大颗粒检测仪检测所述第一测机晶圆，确认所述第一测机晶圆的表面是否存在大颗粒，如果存在大颗粒，则分析所述大颗粒的化学成分；
第二水气去除步骤：将第二测机晶圆放入所述物理气相沉积机台的第一腔室，用所述第一腔室的灯泡照射所述第二测机晶圆，从而去除所述第二测机晶圆表面的水气，并且将所述水气从所述第一腔室中抽出；
第二检测步骤：通过所述大颗粒检测仪检测所述第二测机晶圆，确认所述第二测机晶圆的表面是否存在大颗粒，如果存在大颗粒，则分析所述大颗粒的化学成分；以及
判断步骤：根据所述第一检测步骤和所述第二检测步骤的结果，判断存在所述大颗粒的原因。
 有益效果
通过本发明的晶圆表面大颗粒检测方法，可以准确高效的判断机台的哪个腔室出现了异常，从而可以及时地对出现异常的腔室进行处理。
 附图说明
图1是本发明的晶圆表面大颗粒检测方法所使用的PVD机台的示意图；以及
图2是本发明的晶圆表面大颗粒检测方法的流程图。
符号说明
100 PVD机台
F2 第一腔室
R3 第二腔室
F3 备用第一腔室
 本发明的实施方式
下面参照图1至图2描述本发明的晶圆表面大颗粒检测方法。
本发明的晶圆表面大颗粒检测方法使用的设备包括：PVD（物理气相沉积）机台100和PMD（大颗粒检测仪）（未示出）。如图1所示，PVD机台100包括：用于去除晶圆表面水气的第一腔室F2，以及用于形成薄膜层的第二腔室R3。
在本实施例中，PMD是美国科磊公司（KLA）的KLA 8920。在其它实施例中，PMD也可以是其它型号的机台。PVD机台100可以是本领域常用的任何型号的机台。
如图2所示，本发明的晶圆表面大颗粒检测方法包括：第一水气去除步骤S001、沉积步骤S002、第一检测步骤S003、第二水气去除步骤S004、第二检测步骤S005和判断步骤S006。以下将对各个步骤进行具体说明。
第一水气去除步骤S001：将第一测机晶圆放入PVD机台100的第一腔室F2，用第一腔室F2的灯泡照射第一测机晶圆，从而去除第一测机晶圆表面的水气，并且将水气从第一腔室F2中抽出。
沉积步骤S002：将第一测机晶圆放入PVD机台100的第二腔室R3，在第一测机晶圆的上表面形成薄膜层。在本实施例中，在第一测机晶圆的上表面形成的是相变材料薄膜层。在其它实施例中，也可以形成其它薄膜层。可以采用本领域常用的方法形成薄膜层，在此不再赘述。
第一检测步骤S003：通过PMD检测第一测机晶圆，确认第一测机晶圆的表面是否存在大颗粒，如果存在大颗粒，则分析大颗粒的化学成分。
在本实施例中，大颗粒是指尺寸大于5微米的颗粒。经过检测，第一测机晶圆的表面存在大颗粒。并且经过分析，该大颗粒的主要成分为Ti（钛）。但是第一腔室F2和第二腔室R3中都不应该有Ti，因此判断是第一腔室F2或者第二腔室R3出现了异常。
为了进一步确定，到底是第一腔室F2还是第二腔室R3出现了异常，需要再进行一次检测，在这次检测中，测试晶圆只进入第一腔室F2。
第二水气去除步骤S004：将第二测机晶圆放入PVD机台100的第一腔室F2，用第一腔室F2的灯泡照射第二测机晶圆，从而去除第二测机晶圆表面的水气，并且将水气从第一腔室F2中抽出。
第二检测步骤S005：通过PMD检测第二测机晶圆，确认第二测机晶圆的表面是否存在大颗粒，如果存在大颗粒，则分析大颗粒的化学成分。
在本实施例中，经过检测，第二测机晶圆的表面也存在大颗粒。并且经过分析，该大颗粒的主要成分也为Ti。两次PMD的检测结果如下表所示：
晶圆 F2 R3 大颗粒数量
第一测机晶圆 √ √ 1颗
第二测机晶圆 √ 1颗
判断步骤S006：根据第一检测步骤S003和第二检测步骤S005的结果，判断存在大颗粒的原因。
因为第二测机晶圆只进入了第一腔室F2，而第二测机晶圆的表面也检测出了大颗粒，并且该大颗粒的主要成分也是Ti，这是第一腔室F2中不应该有的，所以判断是第一腔室F2出现了异常。因此，需要对第一腔室F2进行保养。
此外，还可以使用备用第一腔室F3再次进行检测。即，先将第三测机晶圆放入备用第一腔室F3，去除第三测机晶圆表面的水气。再将第三测机晶圆放入第二腔室R3，在第三测机晶圆的上表面形成薄膜层。然后通过PMD机台检测第三测机晶圆，如果检测不到大颗粒，则说明确实是第一腔室F2出现了异常。
如图2所示，本发明的晶圆表面大颗粒检测方法还包括：
保养步骤S007：如果在判断步骤S006中，判断第一腔室F2出现异常，则对第一腔室F2进行保养。可以采用本领域常用的方法对第一腔室F2进行保养，这里也不再赘述。
通过本发明的晶圆表面大颗粒检测方法，可以准确高效的判断机台的哪个腔室出现了异常，以便及时对出现异常的腔室进行处理。
虽然本发明已以实施方式公开如上，然其并非用以限定本发明，任何本领域专业技术人员，在不脱离本发明的精神和范围内，可能作各种需要的更改与润饰，因此本发明的保护范围当视所附的权利要求书所界定的范围为准。

Claims (2)

  1. 一种晶圆表面大颗粒检测方法，所述方法使用的设备包括：物理气相沉积机台（100）和大颗粒检测仪，所述物理气相沉积机台（100）包括：用于去除晶圆表面水气的第一腔室，以及用于形成薄膜层的第二腔室，所述晶圆表面大颗粒检测方法包括：
    第一水气去除步骤S001：将第一测机晶圆放入所述物理气相沉积机台（100）的第一腔室，用所述第一腔室的灯泡照射所述第一测机晶圆，从而去除所述第一测机晶圆表面的水气，并且将所述水气从所述第一腔室中抽出；
    沉积步骤S002：将所述第一测机晶圆放入所述物理气相沉积机台（100）的第二腔室，在所述第一测机晶圆的上表面形成薄膜层；
    第一检测步骤S003：通过所述大颗粒检测仪检测所述第一测机晶圆，确认所述第一测机晶圆的表面是否存在大颗粒，如果存在大颗粒，则分析所述大颗粒的化学成分；
    第二水气去除步骤S004：将第二测机晶圆放入所述物理气相沉积机台（100）的第一腔室，用所述第一腔室的灯泡照射所述第二测机晶圆，从而去除所述第二测机晶圆表面的水气，并且将所述水气从所述第一腔室中抽出；
    第二检测步骤S005：通过所述大颗粒检测仪检测所述第二测机晶圆，确认所述第二测机晶圆的表面是否存在大颗粒，如果存在大颗粒，则分析所述大颗粒的化学成分；以及
    判断步骤S006：根据所述第一检测步骤S003和所述第二检测步骤S005的结果，判断存在所述大颗粒的原因。
  2. 如权利要求1所述的晶圆表面大颗粒检测方法，还包括：
    保养步骤S007：如果在所述判断步骤S006中，判断所述第一腔室出现异常，则对所述第一腔室进行保养。
PCT/CN2023/100685 2023-06-16 2023-06-16 一种晶圆表面大颗粒检测方法 Ceased WO2024254847A1 (zh)

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