WO2025085306A2 - Système de dépôt de couche épitaxiale de carbure de silicium uniforme utilisant un préchauffage de fluide - Google Patents

Système de dépôt de couche épitaxiale de carbure de silicium uniforme utilisant un préchauffage de fluide Download PDF

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Publication number
WO2025085306A2
WO2025085306A2 PCT/US2024/050647 US2024050647W WO2025085306A2 WO 2025085306 A2 WO2025085306 A2 WO 2025085306A2 US 2024050647 W US2024050647 W US 2024050647W WO 2025085306 A2 WO2025085306 A2 WO 2025085306A2
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Prior art keywords
carrier gas
gas
precursor
heated
precursor gas
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WO2025085306A3 (fr
Inventor
Samuel J. WRIGHT
Maxim S. Shatalov
Christopher MORAITIS
Emmanuel Lakios
Yu Yang
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CVD Equipment Corp
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CVD Equipment Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Definitions

  • the present disclosure generally relates to chemical vapor deposition (CVD) systems. More specifically, the present disclosure relates to epitaxial deposition of silicon carbide (SiC).
  • Chemical vapor deposition systems are used to deposit a coating upon a substrate (e.g., a wafer).
  • the substrate may be supported by a rotating wafer chuck.
  • a hot wall reactor configuration is frequently used.
  • precursor reactants are typically preheated via thermal exchange with hot surfaces. This frequently leads to unwanted parasitic deposition, particulate generation due to nucleation in a gas phase, precursor depletion, and the potential for clogging of the preheat zone.
  • Previous precursor preheating methods primarily focus on heating precursor reactant gases and vapors that are premixed with their carrier gases, for example as disclosed in U.S. Patent No. 7,976,634.
  • preheating of precursor gases/vapors occurs in a separate ancillary system where the precursors and carrier gas are again already premixed.
  • Vertical reactor systems that utilize a multi zone showerhead to provide gas injection profiles intended to improve process uniformity in chemical vapor deposition systems are disclosed in U.S. Patent No. 8,551,248.
  • This disclosure relates to a design for the separate injection of a preheated carrier gas (e.g., hydrogen) and unheated precursor reactant gases into a CVD reactor (e.g., a silicon carbide epitaxial reactor), as well as the uniform deposition of coatings (e.g., epitaxial silicon carbide layers) on a rotating substrate (e.g., a wafer).
  • a preheated carrier gas e.g., hydrogen
  • unheated precursor reactant gases e.g., hydrogen
  • unheated precursor reactant gases e.g., hydrogen
  • the precursor reactant gases are mixed with the hot carrier gas stream in order to heat the precursor reactant gases via the fluid mixing without the need for hot surfaces to preheat those reactant gases.
  • the precursor reactant gases and vapors can form desirable intermediate species, (e.g., Si2C and SiC2 in silicon carbide deposition systems) with reduced nucleation in the gas phase and depletion on hot surfaces.
  • the wafer substrate and preheated hydrogen can be heated to process temperature (typically in the range of 1600°C to 1800°C) to generate a true hot wall environment that promotes uniform low defect density and low polytype inclusion crystal layer growth.
  • process temperature typically in the range of 1600°C to 1800°C
  • the preheat zone remains substantially free of parasitic deposition and reduces the need for maintenance of the preheat zone as well as zero particulate generation from the preheat zone.
  • This disclosure also presents precursor injection strategies that improve deposition uniformity while maintaining high gas velocities in the injectors. High velocities are desirable to maintain a low temperature in the injection holes and avoid clogging of the injectors.
  • a system for chemical vapor deposition includes a process chamber having a top plate and a rotating chuck within the process chamber configured to support a growth substrate.
  • a carrier gas inlet is configured to direct a carrier gas flow to a preheat zone, where the preheat zone is configured to heat the carrier gas to a desired process temperature.
  • a precursor gas inlet is configured to direct precursor gas into contact with heated carrier gas to provide a heated mixture of carrier gas and precursor gas. The heated mixture of carrier gas and precursor gas is directed by the carrier gas flow across a top of the rotating chuck.
  • the system also includes a purge port under the rotating chuck to purge gasses from the process chamber.
  • the carrier gas inlet includes a plurality of inlet ports directing carrier gas to a heat exchanger in the preheat zone.
  • each inlet port of the plurality of inlet ports directs carrier gas to a serpentine path in the heat exchanger.
  • the precursor gas inlet includes an injector manifold including a plurality of precursor gas inlet holes.
  • a first pair of gas inlet holes of the plurality of precursor gas inlet holes are positioned a first distance apart and a second pair of gas inlet holes of the plurality of precursor gas inlet holes are positioned a second distance apart, the first distance being greater than the second distance.
  • the first distance is twice the second distance.
  • the precursor gases are injected into the injector manifold from a location below the preheat zone.
  • the carrier gas inlet directs a carrier gas flow including hydrogen to the preheat zone.
  • the precursor gas inlet directs a precursor gas composition suitable for epitaxial deposition of silicon carbide on the growth substrate into contact with heated carrier gas.
  • the growth substrate is a wafer.
  • the rotating check is a composite chuck including an inner part configured to support the growth substrate and an outer part including a recess dimensioned and configured to receive the inner part.
  • the system further includes a heating coil located above a reactor ceiling of the process chamber to inductively heat the growth substrate positioned upon the rotating chuck.
  • the heating coil includes a two piece susceptor.
  • the process chamber includes reactor walls heated by resistive heaters or inductive coupling positioned externally of the process chamber.
  • the method includes pre-heating a carrier gas and mixing an unheated precursor gas with the pre-heated carrier gas to provide a reactive gas mixture.
  • the method further includes directing the reactive gas mixture across the rotating substrate positioned on a rotating chuck and purging gasses through a purge port positioned under the rotating chuck.
  • pre-heating the carrier gas includes introducing carrier gas through a plurality of inlet ports into a heat exchanger.
  • introducing carrier gas into the heat exchanger includes introducing carrier gas from each inlet port of the plurality of inlet ports into a serpentine path in the heat exchanger.
  • mixing the unheated precursor gas with the pre-heated carrier gas includes introducing precursor gas through an injector manifold including a plurality of precursor gas inlet holes.
  • the precursor gases are injected into the injector manifold from a location below the heat exchanger.
  • mixing the unheated precursor gas with the pre-heated carrier gas includes mixing hydrogen as the carrier gas and a composition suitable for epitaxial deposition of silicon carbide on the substrate as the precursor gas, and directing the reactive gas mixture across the rotating substrate includes directing the reactive gas mixture across a wafer.
  • FIG. 1 shows an illustrative system for chemical vapor deposition that may incorporate various aspects of the presently disclosed features
  • FIG. 2 shows the process chamber of the system of Fig. 1 with the cover removed to show internal structures thereof;
  • FIG. 3 schematically illustrates a side cross sectional view of a composite rotating wafer chuck having a wafer loaded thereon for exposure to a CVD process in accordance with aspects of the present disclosure
  • FIG. 4 schematically illustrates a side cross sectional view of a CVD reactor with a single wafer heating coil located above the process chamber top plate and incorporating a composite rotating wafer chuck having a wafer loaded thereon for exposure to a CVD process in accordance with aspects of the present disclosure
  • Fig. 5 shows a cross section of a reactor that utilizes separate injection of a preheated carrier gas and unheated precursor reactant gases in accordance with aspects of the present disclosure
  • FIG. 6 shows a top down section view of a reactor in accordance with aspects of the present disclosure
  • Fig. 7 shows numerical simulation thermal modelling results from a top down section view of the reactor of Fig. 4;
  • Fig. 8 A shows numerical simulation flow modelling of the precursor mass fraction in the reactor of Fig. 4.
  • Fig. 8B shows a radial plot of the precursor mole fraction from center to edge of the substrate.
  • an illustrative system 100 for chemical vapor deposition includes a wafer transport unit 10, a cassette housing 20, a process chamber 30 and a process module 60.
  • Wafer transport unit 10 includes a robotic arm (not shown) and suitable motors (not shown) and controls (not shown) for movement of the robotic arm to allow wafer transport unit 10 to retrieve a wafer 50 from cassette 22 in cassette housing 20, and deliver wafer 50 to process chamber 30.
  • Process module 60 includes heating and cooling systems, gases for CVD deposition processes, one or more plasma generators, a vacuum system, exhaust structures, etc. typically found in CVD systems.
  • the one or more plasma generators may generate one or more of: DC plasma, pulsed DC plasma, RF plasma, pulsed RF plasma, intermediate frequency (IF) plasma, pulsed IF plasma, mixed DC and RF plasma, mixed DC and IF plasma, mixed IF and RF plasma, mixed DC and RF and IF plasma, microwave plasma, or microwave plasma mixed with one or more of DC, RF, or IF plasma.
  • a “pulsed DC” source may be employed to create plasma with constant electric field orientation with optional on/off cycling (unlike RF plasma, where polarity is switching during one oscillation period).
  • Process module 60 also includes controller(s) to control the various functions of the CVD system.
  • process chamber 30 includes a flange 32 including an opening 33 through which wafer 50 is introduced by wafer transport unit 10 into process chamber 30.
  • a valve (not shown) seals process chamber 30 after introduction of wafer 50 as is known to those skilled in the art.
  • a showerhead 300 is mounted to process chamber 30.
  • Sensors 35a, 35b and 35c are mounted through showerhead 300 to detect the temperature of the wafer 50.
  • sensors 35a-c are optical pyrometers that can sense a temperature of wafer 50 as it rotates, without requiring direct contact with wafer 50.
  • a gas inlet port 37 is also provided to permit introduction of process gas (e.g., premixed gases required for CVD deposition of a film onto a substrate) into process chamber 30.
  • Process chamber 30 also includes a view port 39 and a port (not shown) to remove exhaust gases from process chamber 30.
  • Fig. 3 shows a cross section drawing of a composite wafer chuck 40 including outer support part 41, inner support part 42 and rotation shafts 43 and 44.
  • Rotation shaft 43 is connected to the outer support part 41 to enable wafer rotation
  • rotation shaft 44 is connected to the inner support part 42 to enable lifting the inner support part in the unload position.
  • Rotation shaft 43 is also coupled to a bottom plate 45 of a CVD reactor by a flexible bellows 46 or other vacuum connection to allow for vertical motion.
  • Systems including a composite wafer chuck are suitable for supporting a wafer 50 for exposure to a CVD process in accordance with aspects of the present disclosure.
  • Fig. 4 shows a CVD reactor a cross section view of a prior art horizontal cross-flow epitaxial reactor geometry where a wafer is resting on a chuck, or susceptor, that is inductively heated from below by a flat “pancake” induction coil 21.
  • a chuck with a wafer can be rotated during the deposition process for improved uniformity.
  • a hot wall reactor enclosure can be made of graphite walls 221 and 223 and ceiling 222.
  • the reactor enclosure may be surrounded by thermally insulating material 231 , 232 and 233 made, for example, from graphite foam or, for example, graphite felt.
  • a gas inlet port 24 provides delivery of the precursor species for reaction
  • port 103 provides delivery of unheated precursor reactant gases
  • an exhaust port 25 provides exhaust of any unreacted precursor and byproduct gases.
  • Multiple zone heaters such as those previously disclosed in International Patent Application Publication PCT/US22/50351 are also contemplated.
  • Fig. 5 shows a cross section of a reactor in accordance with aspects of the present disclosure.
  • Carrier gas introduced via carrier gas inlet 101 is heated in preheat zone 102 to the desired process temperature by any suitable heating method such as, for example, resistive heating, infrared lamp heating, RF induction heating, or the like.
  • Precursor gases and vapors are introduced into the unheated injectors 103 and are heated by the hot fluid carrier gas in zone 104 up to the desired process temperature prior to impinging on the growth substrate, e.g., wafer 105. Gases exit through exhaust 106.
  • the wafer sits on a heated susceptor 111 which is a two- piece construction coupled to a coaxial rotation shaft 108 (as described above in connection with Fig. 3, although other configurations of composite wafer chucks are also contemplated).
  • the volume beneath the susceptor is purged through ports 107a,b penetrating through reactor bottom insulation 110 and plenum 112 to avoid parasitic deposition in this volume.
  • Susceptor 111 can be inductively heated by a single or multiple induction coils located above composite reactor ceiling 109 that does not inductively couple to such coils.
  • Fig. 6 shows shows a top down section view of a reactor in accordance with aspects of the present disclosure.
  • Separate inject ports 201a-e are provided for the carrier gas, allowing for adjustment of the flow from the center to the edge of the reactor.
  • the carrier gas enters 201a-e from underneath in this illustrative reactor.
  • Carrier gas then enters heat exchanger 202 which is heated to a temperature that promotes heating of the carrier gas to the desired process temperature prior to exiting preheat heat exchanger 202.
  • the carrier gas enters multiple serpentine paths to increase contact with hot surfaces in the heat exchanger and promote efficient heating of the carrier gas. It should be understood that Fig.
  • FIG. 6 shows an example of heat exchanger 202 geometry and that the design of the heat exchanger may be optimized for a specific carrier gas, a desired range of gas flow rates, and a desired temperature of the carrier gas at the output of heat exchanger.
  • Precursor gases and vapors are injected into an injector manifold 203 from below, and enter the reactor via a number of holes of predetermined cross sectional area in order to define the gas velocity in the injectors.
  • injectors labelled 203a-g there are seven (7) injectors labelled 203a-g, although fewer or more injectors may be employed.
  • the distance from a to c is twice the distance from a to b, with the remaining injectors evenly spaced.
  • the wafer 206 is heated by a two piece susceptor as well as by heated reactor walls 207a,b which, in turn, are heated externally by resistive heaters or inductive coupling from dedicated coils (such as the heating coils described above in connection Figure 4, although other configurations of heating coils are also contemplated). Gases exit through the exhaust 208.
  • Fig. 7 shows numerical simulation thermal modelling results from a top down section view of the reactor. Nearly uniform hydrogen carrier gas at a temperature of 1650°C enters the volume from the left 301. As the preheated hydrogen mixes with the cool precursor gases and vapors, the gas mixture drops in temperature in zone 302 as expected, and quickly rises again in zone 303 to the desired process temperature before reaching the leading edge of the wafer.
  • Fig. 8A shows numerical simulation flow modelling of the precursor mass fraction, in this case trichlorosilane (TCS).
  • TCS trichlorosilane
  • the precursor mole fraction map 401 over the wafer surface under rotation is shown.
  • 402 is a radial plot of the precursor mole fraction from center to edge of the substrate, in this case a 200 mm wafer. It should be understood that further optimization may be achieved by adjusting the flow rates and injector hole patterns in accordance with aspects of the present disclosure.
  • SiC silicon carbide
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • LPCVD low pressure chemical vapor deposition
  • PVD physical vapor deposition
  • annealing heat treating, plasma etching and other similar processes.
  • the described techniques may also be applicable to larger, non-planar processed parts, when rotary motion is involved.
  • silicon carbide SiC
  • other material systems may benefit from reactor geometries in accordance with the present disclosure, for example aluminum nitride (AIN), aluminum gallium nitride (AlGaN), aluminum scandium nitride (AlScN), boron nitride (BN), boron-doped aluminum nitride (BAIN) and other material systems requiring high (>1400°C) deposition temperatures.
  • AIN aluminum nitride
  • AlGaN aluminum gallium nitride
  • AlScN aluminum scandium nitride
  • BN boron nitride
  • BAIN boron-doped aluminum nitride
  • chlorine or HC1 based precursors to form chloride adatoms at the growth surface may benefit from higher material quality of AIN, AlGaN, AlScN, BN, BAIN and other materials by suppressing gas phase nucleation and pre-reactions and, thus, enabling use of higher deposition temperature.
  • the systems described herein may utilize one or more controllers to receive various information and transform the received information to generate an output.
  • the controller may include any type of computing device, computational circuit, or any type of processor or processing circuit capable of executing a series of instructions that are stored in a memory.
  • the controller may include multiple processors and/or multicore central processing units (CPUs) and may include any type of processor, such as a microprocessor, digital signal processor, microcontroller, programmable logic controller (PLC), field programmable gate array (FPGA), or the like.
  • the controller may also include a memory to store data and/or instructions that, when executed by the one or more processors, causes the one or more processors to perform one or more methods and/or algorithms.
  • any of the herein described methods, programs, algorithms or codes may be converted to, or expressed in, a programming language or computer program.
  • programming language and “computer program,” as used herein, each include any language used to specify instructions to a computer, and include (but is not limited to) the following languages and their derivatives: Assembler, Basic, Batch files, BCPL, C, C+, C++, Ladder Logic, Delphi, Fortran, Java, JavaScript, machine code, operating system command languages, Pascal, Perl, PL1, scripting languages, Visual Basic, metalanguages which themselves specify programs, and all first, second, third, fourth, fifth, or further generation computer languages. Also included are database and other data schemas, and any other meta-languages.
  • the storage and/or memory device may be one or more physical apparatus used to store data or programs on a temporary or permanent basis.
  • the controller may include volatile memory and requires power to maintain stored information.
  • the controller includes non-volatile memory and retains stored information when it is not powered.
  • the non-volatile memory includes flash memory.
  • the non-volatile memory includes dynamic random-access memory (DRAM).
  • the non-volatile memory includes ferroelectric random access memory (FRAM).
  • the nonvolatile memory includes phase-change random access memory (PRAM).
  • the controller is a storage device including, by way of nonlimiting examples, CD-ROMs, DVDs, flash memory devices, magnetic disk drives, magnetic tapes drives, optical disk drives, and cloud computing based storage.
  • the storage and/or memory device is a combination of devices such as those disclosed herein. Code or instructions contained thereon can be represented by carrier wave signals, infrared signals, digital signals, and by other like signals.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un système de dépôt chimique en phase vapeur, le système comprenant une chambre de traitement ayant une plaque supérieure ; un mandrin rotatif à l'intérieur de la chambre de traitement conçu pour supporter un substrat de croissance ; une entrée de gaz porteur conçue pour diriger un écoulement de gaz porteur vers une zone de préchauffage, la zone de préchauffage étant conçue pour chauffer le gaz porteur à une température de traitement souhaitée ; une entrée de gaz précurseur conçue pour diriger un gaz précurseur en contact avec un gaz porteur chauffé pour fournir un mélange chauffé de gaz porteur et de gaz précurseur, le mélange chauffé de gaz porteur et de gaz précurseur étant dirigé par l'écoulement de gaz porteur à travers une partie supérieure du mandrin rotatif ; et un orifice de purge sous le mandrin rotatif pour purger les gaz de la chambre de traitement. L'invention concerne également des procédés de dépôt d'un revêtement sur un substrat rotatif qui consistent à préchauffer un gaz porteur ; à mélanger un gaz précurseur non chauffé avec le gaz porteur préchauffé pour fournir un mélange gazeux réactif ; à diriger le mélange gazeux réactif à travers le substrat rotatif positionné sur un mandrin rotatif ; et à purger les gaz à travers un orifice de purge positionné sous le mandrin rotatif.
PCT/US2024/050647 2023-10-16 2024-10-10 Système de dépôt de couche épitaxiale de carbure de silicium uniforme utilisant un préchauffage de fluide Pending WO2025085306A2 (fr)

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US202363590504P 2023-10-16 2023-10-16
US63/590,504 2023-10-16

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020188376A1 (en) 2000-08-18 2002-12-12 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US8551248B2 (en) 2010-04-19 2013-10-08 Texas Instruments Incorporated Showerhead for CVD depositions

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0823492A3 (fr) * 1996-08-07 1999-01-20 Concept Systems Design Inc. Système de chauffage par zones avec réglage à contre-réaction
JP2004513857A (ja) * 1999-07-26 2004-05-13 エムコア・コーポレイション ウエハ上にエピタキシャル層を成長させる装置
DE102013012082A1 (de) * 2013-07-22 2015-01-22 Aixtron Se Vorrichtung zum thermischen Behandeln eines Halbleitersubstrates, insbesondere zum Aufbringen einer Beschichtung
DE102013112855A1 (de) * 2013-11-21 2015-05-21 Aixtron Se Vorrichtung und Verfahren zum Fertigen von aus Kohlenstoff bestehenden Nanostrukturen
DE102014109195A1 (de) * 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes aus mehreren flüssigen oder festen Ausgangsstoffen für eine CVD- oder PVD-Einrichtung
US9711353B2 (en) * 2015-02-13 2017-07-18 Panasonic Corporation Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas
KR101912886B1 (ko) * 2017-03-07 2018-10-29 에이피시스템 주식회사 가스 분사 장치, 이를 포함하는 기판 처리 설비 및 이를 이용한 기판 처리 방법
CN116411258B (zh) * 2021-12-30 2025-12-12 中微半导体设备(上海)股份有限公司 一种薄膜处理装置及其方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020188376A1 (en) 2000-08-18 2002-12-12 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US8551248B2 (en) 2010-04-19 2013-10-08 Texas Instruments Incorporated Showerhead for CVD depositions

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