WO2025171984A1 - Structure de nanocristal semi-conducteur, son procédé de production et dispositif optoélectronique - Google Patents

Structure de nanocristal semi-conducteur, son procédé de production et dispositif optoélectronique

Info

Publication number
WO2025171984A1
WO2025171984A1 PCT/EP2025/051025 EP2025051025W WO2025171984A1 WO 2025171984 A1 WO2025171984 A1 WO 2025171984A1 EP 2025051025 W EP2025051025 W EP 2025051025W WO 2025171984 A1 WO2025171984 A1 WO 2025171984A1
Authority
WO
WIPO (PCT)
Prior art keywords
shell
rod
semiconductor nanocrystal
core
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2025/051025
Other languages
English (en)
Inventor
Robert FITZMORRIS
Aidan CORYELL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Ams Osram International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Osram International GmbH filed Critical Ams Osram International GmbH
Publication of WO2025171984A1 publication Critical patent/WO2025171984A1/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

Definitions

  • a structure, methods for producing a structure, and an optoelectronic device are specified.
  • a structure is specified.
  • the structure is a discrete nanoparticle.
  • a nanoparticle is a small object with dimensions in the nanometer range.
  • the structure comprises an extension of the most 100 nm, in particular of at most 50 nm, along its largest dimension.
  • the structure can be a spherical, a cubic, and/or an elongated structure.
  • the first shell comprises a metal selenide semiconductor material or a metal phosphide semiconductor material .
  • the metal selenide semiconductor material can have a wurtzite crystal structure .
  • the metal selenide semiconductor material is a zinc-containing selenide semiconductor material .
  • the metal selenide semiconductor material is zinc selenide ( ZnSe ) , cadmium zinc selenide ( CdZnSe ) , zinc selenide sul fide ( ZnSeS ) , or zinc telluride selenide ( ZnTeSe ) .
  • the bandgap and/or the lattice parameters of the ZnSe are adj usted by exchanging a part of the Zn with Cd and/or a part of the Se with Te or S .
  • the metal phosphide semiconductor material is an indium-containing and/or gallium-containing phosphide semiconductor material .
  • the metal phosphide semiconductor material is indium phosphide ( InP ) , gallium phosphide ( GaP ) or indium gallium phosphide ( InGaP ) .
  • the first shell is rodshaped .
  • the first shell is elongated .
  • a first dimension of the first shell is larger than a second dimension and a third dimension both perpendicular to the first dimension .
  • an outer shape of the first shell surrounding the semiconductor nanocrystal is that of a cuboid, a hexagonal prism, an ellipsoid, or a cylinder .
  • the structure comprises a semiconductor nanocrystal and a first shell at least partially surrounding the semiconductor nanocrystal , wherein the structure is configured to convert the primary radiation into a secondary radiation, wherein the first shell comprises a metal selenide semiconductor material or a metal phosphide semiconductor material , and wherein the first shell is rodshaped .
  • the rod-shaped first shell reduces particle-to- particle sel f-absorption, increases absorption in the UV and blue region, reduces red shi fting of the emission wavelength and provides additional corrosion resistance .
  • the rodshaped first shell enables the protection of the semiconductor nanocrystal .
  • a rod-shaped first shell By using a rod-shaped first shell , the strain due to the lattice mismatch is focused in only one axis of the shell whereas , in the other directions , the strain is less than in spherical or cubic shells .
  • a rod-shaped first shell avoids more deficits and achieves more advantages than spherical or cubic first shells .
  • the first shell comprises a thickness in a first direction larger than a thickness in a second direction perpendicular to the first direction .
  • the thickness of the first shell is a height of the first shell on a surface of the semiconductor nanocrystal .
  • the first shell can comprise a thickness in a third direction perpendicular to the first direction and the second direction .
  • the thickness in the third direction can be equal to or larger than the thickness in the second direction and smaller than the thickness in the first direction .
  • the first direction is the extension along the length of the first shell .
  • the thickness of the first shell along the first direction, the second direction and/or the third direction can depend on the strain due to the lattice mismatch between the material of the semiconductor nanocrystal and the material of the first shell .
  • the higher the lattice mismatch the thinner the first shell can be grown before defects are introduced .
  • the thickness of the first shell in the first direction is at least three monolayers .
  • the thickness of the first shell in the second direction is at least one monolayer .
  • the thickness of the first shell in the second direction is at most three monolayers .
  • a first shell comprising a thickness in a first direction larger than a thickness in a second direction is advantageously rod-shaped .
  • an aspect ratio of the semiconductor nanocrystal in particular of the core of the semiconductor nanocrystal , is smaller than an aspect ratio of the first shell .
  • the first shell is more elongated than the semiconductor nanocrystal .
  • the core is spherical or cubic and thus has an aspect ratio of 1 .
  • the core can be rod-shaped and have a smaller aspect ratio than the first shell .
  • an aspect ratio of the semiconductor nanocrystal in particular of the core of the semiconductor nanocrystal , is equal to an aspect ratio of the first shell .
  • the semiconductor nanocrystal is rod-shaped and has the same aspect ratio as the first shell .
  • an aspect ratio of the semiconductor nanocrystal in particular of the core of the semiconductor nanocrystal , is larger than an aspect ratio of the first shell .
  • the semiconductor nanocrystal is more elongated than the first shell .
  • the semiconductor nanocrystal is rod-shaped and has a larger aspect ratio than the first shell .
  • the semiconductor nanocrystal comprises , in particular consists of , a rodshaped core .
  • the core is elongated .
  • a first dimension of the core is larger than a second dimension and a third dimension both perpendicular to the first dimension .
  • an outer shape of the core is that of a cuboid, a hexagonal prism, an ellipsoid, or a cylinder .
  • the semiconductor nanocrystal is free of any shells .
  • the first shell comprises a chemical element not present in the rod-shaped core , and a concentration of the chemical element in the first shell increases with increasing distance from the rodshaped core .
  • the concentration of the chemical element in the first shell increases from the rodshaped core to a surface of the first shell facing away from the rod-shaped core .
  • the first shell comprises a gradient of the chemical element .
  • the chemical element is a cation .
  • a concentration of the chemical element in comparison to a concentration of all cations is substantially 0 at an interface of the first shell with the rod-shaped core .
  • a method for producing a structure is speci fied .
  • the structure described herein is produced by the method for producing a structure described in the following .
  • embodiments , features , and advantages described in combination with the structure also apply to the method for producing a structure described in the following and vice versa .
  • a structure having a rod-shaped first shell can advantageously be produced simply and cost- ef ficiently .
  • the growth of the first shell can be initiated and facilitated on surfaces of the seminar nanocrystal that underwent the ligand exchange .
  • a method for producing a structure is speci fied .
  • the structure described herein is produced by the method for producing a structure described in the following .
  • embodiments , features , and advantages described in combination with the structure also apply to the method for producing a structure described in the following and vice versa .
  • the semiconductor chip is a micro-LED .
  • LED is an abbreviation for the term " light-emitting diode” .
  • Micro-LEDs may have a width, a length, a thickness and/or a diameter smaller than or equal to 100 micrometers , in particular smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers .
  • micro-LEDs for example rectangular micro-LEDs , have an edge length, for instance in plan view of layers of a layer stack, of a luminous surface smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers .
  • the micro-LED is a light-emitting diode , wherein a growth substrate is removed, such that a thickness of the micro-LED is , for instance , between and including 1 . 5 micrometers and 10 micrometers .
  • the micro-LED is provided on a wafer having releasable retaining structures . The micro-LED can be detached from the wafer in a non-destructive manner .
  • Figures 1 to 4 and 7 each show a schematic illustration of a structure according to di f ferent exemplary embodiments .
  • Figures 6A and 6B each show a transmission electron microscopy (TEM) images of semiconductor nanocrystals and structures obtained with a method for producing a structure according to an exemplary embodiment
  • the structure 1 of the exemplary embodiment of figure 1 comprises a semiconductor nanocrystal 2 and a first shell 3 .
  • the semiconductor nanocrystal 2 comprises a core 21.
  • the core 21 comprises a semiconductor nanocrystal 2 and a first shell 3 .
  • the core 21 is spherical, i.e. a dot.
  • the core 21 comprises a semiconductor material, for example CdSe or InP.
  • the first shell 3 is thicker in one direction than in perpendicular directions. In the exemplary embodiment of figure 1, the first shell 3 is thicker in the direction of the c-axis than in the directions of the a-axis and the b- axis.
  • the core 21 can be arranged in a center of the first shell 3 or, as shown in figure 1, off-center.
  • the core 21 is configured to convert primary radiation into secondary radiation.
  • the structure 1 forms a core-shell quantum dot with an emissive core 21 and a first shell 3 having a wider bandgap semiconductor material than the core 21.
  • any core 21 or second shell 22 or third shell 4 can be spherical or elongated, i.e. a dot or a rod.
  • the first shell 3 is rodshaped.
  • the shape of the cores 21, the second shells 22, the third shells 4, and the first shells 3 are indicated for each combination of semiconductor materials for the structures 1 in parentheses.
  • first ligands 5 are exchanged with second ligands 6 .
  • start of the growth of the first shell 3 in the second region 61 initiates and facilitates the ligand exchange of first ligands 5 to second ligands 6 in first regions 51 on the surface of the semiconductor nanocrystal 2 due to the kinetics of the shell growth reaction .
  • the structures 1 according to the exemplary embodiments of figure 7 can be produced by the method for producing a structure 1 as described in conj unction with figures 8A and 8B .
  • figures 8A and 8B illustrate the method for producing a structure 1 using the structure 1 as shown in the exemplary embodiment of figure 7 .
  • a cation exchange of the semiconductor material of the rod-shaped semiconductor nanocrystal 7 is performed in the outer region 8 .
  • Cd of the CdSe is replaced with Zn .
  • a first shell 3 is formed of the outer region 8 .
  • the resulting structure 1 as shown in figure 8B is identical to the structure explained in conj unction with figure 7 .
  • the inner region 9 forms the semiconductor nanocrystal 2 , in particular the rod-shaped core 21 , of the structure 1 and the outer region 8 forms the first shell 3 .
  • the semiconductor material of the first shell 3 comprises a gradient .
  • the semiconductor material of the first shell 3 is CdZnSe with an increasing concentration of Zn and a decreasing concentration of Cd with increasing distance from the inner region 9 .
  • a conversion element 30 is arranged on a radiation exit surface of the semiconductor chip 20 .
  • the conversion element 30 can be arranged directly on the radiation exit surface or in a distance to the radiation exit surface .
  • the conversion element 30 can be in the form of a layer or a casting .
  • the conversion element 30 can comprise a matrix material , for example silicone .
  • the at least one structure 1 can be dispersed in the matrix material . Further phosphors can be dispersed in the matrix material together with the at least one structure 1 .
  • the conversion element 30 converts at least a part of the primary radiation into secondary radiation of a second wavelength range .
  • the conversion element comprises or consists of at least one structure 1 described herein .

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)

Abstract

Est ici divulguée une structure. Selon un mode de réalisation, la structure (1) comprend un nanocristal semi-conducteur (2) et une première coque (3) entourant au moins partiellement le nanocristal semi-conducteur (2), la structure (1) étant configurée pour convertir un rayonnement primaire en un rayonnement secondaire, la première coque (3) comprenant un matériau semi-conducteur de séléniure métallique ou un matériau semi-conducteur de phosphure métallique, et la première coque (3) étant en forme de tige. En outre, des procédés de fabrication d'une structure et d'un dispositif optoélectronique, comprenant en particulier une micro-LED, sont décrits.
PCT/EP2025/051025 2024-02-13 2025-01-16 Structure de nanocristal semi-conducteur, son procédé de production et dispositif optoélectronique Pending WO2025171984A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202463552680P 2024-02-13 2024-02-13
US63/552,680 2024-02-13

Publications (1)

Publication Number Publication Date
WO2025171984A1 true WO2025171984A1 (fr) 2025-08-21

Family

ID=94476326

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2025/051025 Pending WO2025171984A1 (fr) 2024-02-13 2025-01-16 Structure de nanocristal semi-conducteur, son procédé de production et dispositif optoélectronique

Country Status (1)

Country Link
WO (1) WO2025171984A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2768925B1 (fr) * 2011-10-20 2014-12-31 Koninklijke Philips N.V. Source de lumière à boîtes quantiques
EP2616522B1 (fr) * 2010-09-16 2019-02-27 Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. Nanoparticules semiconductrices anisotropes
EP2973753B1 (fr) * 2013-03-12 2019-11-13 OSRAM Opto Semiconductors GmbH Appariement d'un noyau nanocristallin et d'une enveloppe nanocristalline ayant un noyau nanocristallin en matériau du groupe i-iii-vi
EP3329516B1 (fr) * 2015-07-30 2020-09-30 OSRAM Opto Semiconductors GmbH Hétérostructure à points quantiques nanocristallins à faible teneur en cadmium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2616522B1 (fr) * 2010-09-16 2019-02-27 Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. Nanoparticules semiconductrices anisotropes
EP2768925B1 (fr) * 2011-10-20 2014-12-31 Koninklijke Philips N.V. Source de lumière à boîtes quantiques
EP2973753B1 (fr) * 2013-03-12 2019-11-13 OSRAM Opto Semiconductors GmbH Appariement d'un noyau nanocristallin et d'une enveloppe nanocristalline ayant un noyau nanocristallin en matériau du groupe i-iii-vi
EP3329516B1 (fr) * 2015-07-30 2020-09-30 OSRAM Opto Semiconductors GmbH Hétérostructure à points quantiques nanocristallins à faible teneur en cadmium

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