WO2025201973A1 - Appareil et procédé de contrôle de dispersion de contaminants dans une source de rayonnement euv - Google Patents

Appareil et procédé de contrôle de dispersion de contaminants dans une source de rayonnement euv

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Publication number
WO2025201973A1
WO2025201973A1 PCT/EP2025/057430 EP2025057430W WO2025201973A1 WO 2025201973 A1 WO2025201973 A1 WO 2025201973A1 EP 2025057430 W EP2025057430 W EP 2025057430W WO 2025201973 A1 WO2025201973 A1 WO 2025201973A1
Authority
WO
WIPO (PCT)
Prior art keywords
state
passageway
target material
radiation
drive laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2025/057430
Other languages
English (en)
Inventor
Liza EASO
Gary Dwayne MANDRUSIAK
John Tom STEWART
Marc Guy Langlois
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of WO2025201973A1 publication Critical patent/WO2025201973A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/0035—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam

Definitions

  • the present disclosure relates to apparatuses for and methods of generating extreme ultraviolet (“EUV”) radiation from a plasma created through conversion of a target material in a vessel.
  • EUV extreme ultraviolet
  • this disclosure relates to apparatuses for and methods of controlling the dispersal of target material within a chamber in a system for generating EUV radiation.
  • a lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a lithographic apparatus may, for example, project a pattern from a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (e.g., a photoresist or resist) provided on a substrate.
  • a lithographic apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features which can be formed on the substrate.
  • Methods for generating EUV radiation include converting a target material to a plasma state.
  • the target material includes at least one element, e.g., xenon, lithium, or tin, with one or more emission lines in the EUV portion of the electromagnetic spectrum.
  • the target material can be solid, liquid, or gas.
  • LPP laser produced plasma
  • the required plasma can be produced by using a radiation source such as a laser beam to irradiate and convert a target material having the required line -emitting element.
  • One LPP technique involves generating a stream of target material droplets and irradiating at least some of the droplets with one or more pulses of laser radiation.
  • Sources using this technique generate EUV radiation by coupling laser energy into a target material having at least one EUV emitting element, creating a highly ionized plasma with electron temperatures of several 10’s of eV.
  • the processes used to generate EUV radiation from a plasma also typically generate undesirable byproducts in the plasma chamber which can include out-of-band radiation, high energy ions, and debris, e.g., atoms and/or clumps/microdroplets of target material.
  • undesirable byproducts in the plasma chamber can include out-of-band radiation, high energy ions, and debris, e.g., atoms and/or clumps/microdroplets of target material.
  • These processes can also produce target material vapor, which can cause pools or clusters of target material to accumulate at various locations within the chamber.
  • the target material is tin
  • the tin vapor can cause the formation of tin contamination which can block orifices in the chamber such as for a gas circulation system as described in more detail below.
  • the target material debris byproduct is sometimes referred to as stray target material, and the stray target material and the target material vapor are sometimes referred to together as waste target material.
  • Stray target material can also obstruct propagation of EUV radiation within the chamber.
  • the EUV radiation is emitted from the plasma in all directions.
  • a near-normal -incidence mirror (often termed a “collector mirror” or simply a “collector”) is positioned to collect, direct, and, in some arrangements, focus at least a portion of the radiation to an intermediate focal location.
  • the collector is advantageously implemented as a multilayer mirror (“MLM”).
  • MLM multilayer mirror
  • this MLM is generally made up of alternating layers of material (the MLM stack) over a foundation or substrate.
  • System optics may also be configured as a coated optical element even if it is not implemented as an MLM.
  • the collected radiation may then be relayed from the intermediate location to a set of optics, detectors, and ultimately to a scanner including a reticle.
  • the ray paths of the EUV radiation in the chamber thus define a cone with the collector optics as its base and the intermediate focus of the collector optics as its vertex.
  • a buffer gas is used to establish flow patterns in the chamber to protect the collector optics and carry off the plasma generation byproducts.
  • molecular hydrogen (H2) gas at pressures in the range of about 0.5 mbar to about 3 mbar may be used in the vacuum chamber as a buffer gas to control target material dispersal for debris mitigation.
  • Hydrogen is relatively transparent to EUV radiation having a wavelength of about 13.5 nm and so is preferred to other candidate gases such as He, Ar, or other gases which exhibit a higher absorption at about 13.5 nm.
  • Gas flows are also established within the chamber intended to keep target material from accumulating on the plasma-facing surfaces within the chamber.
  • a gas flow may be established in a direction transverse to the reflective surface of the collector. This flow is referred to as forward flow which is typically directed toward one or both of the primary focus and the intermediate focus of the collector.
  • gas may be guided to flow substantially along the reflective surface of the collector. This flow is referred to as lateral flow.
  • Another flow along the surface of the collector towards its center from its circumference can be referred to as the perimeter flow.
  • the liquid tin may be exposed to hydrogen radicals (FT) from the plasma in the source.
  • FT hydrogen radicals
  • Liquid tin tends to erupt in the presence of these hydrogen radicals such as are generated during EUV production thus ejecting tin back into the chamber gas flow patterns. This phenomenon is sometimes referred to a “tin spitting.”
  • tin spitting Once the liquid tin returns to the gas flow it can disperse to various locations where its presence is destructive, for example, towards and past the intermediate focus and even to the scanner contributing to target material accumulation in the scanner and target material on customer reticles, pellicles, and wafers.
  • apparatuses and methods for limiting the effects of target material spitting, and, in particular, for limiting the re-introduction of target material into the gas streams in the chamber from agglomerations of deposited target material are disclosed.
  • an apparatus for generating extreme ultraviolet radiation by irradiating a target material comprising a chamber, a gas flow system arranged to cause a flow of gas through a portion of the chamber, the gas flow system having at least one exhaust outlet positioned in a wall of the chamber, the gas carrying target material as the gas passes through an exhaust outlet, a passageway arranged around at least part of an inner surface of the exhaust outlet, and a heater in thermal communication with the passageway.
  • the apparatus may further comprise a controller arranged to control a temperature of the heater in which the apparatus has a first state and a second state, the controller controlling the heater so that the passageway assumes a first temperature below the melting temperature of the target material when the apparatus may be in the first state and so that the passageway assumes a second temperature above the melting temperature of the target material when the apparatus may be in the second state.
  • the first state may be a plasma on state in which target material may be irradiated at the irradiation site to generate extreme ultraviolet radiation and the second state may be a plasma off state in which no target material may be irradiated at the irradiation site.
  • the apparatus may further comprise a gas channel in thermal communication with the passageway.
  • the heater may comprise at least one electrically resistive in thermal communication with the passageway.
  • the at least one electrically resistive wire may be wound around an outer periphery of the passageway.
  • the at least one electrically resistive wire may be arranged in a serpentine pattern around an outer periphery of the passageway. A lateral spacing of adjacent portions of the at least one electrically resistive wire around that outer periphery of the passageway may be varied.
  • an apparatus for generating extreme ultraviolet radiation by irradiating a target material having a first state and a second state
  • the apparatus comprising a chamber, a gas flow system arranged to cause a flow of gas through a portion of the chamber, the gas flow system having at least one exhaust outlet positioned in a wall of the chamber, the gas carrying target material as the gas passes through an exhaust outlet, a passageway arranged around at least part of an inner surface of the exhaust outlet, a gas channel in thermal communication with the passageway, a heater in thermal communication with the passageway, the heater comprising at least one electrically resistive in thermal communication with the passageway, and a controller arranged to control a temperature of the heater, the controller controlling the heater so that the passageway assumes a first temperature below the melting temperature of the target material when the apparatus may be in the first state and so that the passageway assumes a second temperature above the melting temperature of the target material when the apparatus may be in the second state.
  • the first state may be a plasma on state in which target material may be irradiated at the irradiation site to generate extreme ultraviolet radiation and the second state may be a plasma off state in which no target material may be irradiated at the irradiation site.
  • the first state may be a plasma on state in which the source irradiates target material to generate extreme ultraviolet radiation and the second state may be a plasma off state in which the source does not irradiate target material at the irradiation site.
  • FIG. 4A is a front perspective view of a heater assembly for a passageway for an EUV source in accordance with an aspect of an embodiment.
  • FIG. 4B is a side perspective view of a heater assembly for a passageway for an EUV source in accordance with an aspect of an embodiment.
  • FIG. 5A is a perspective view of a portion of a passageway for an exhaust port for an
  • EUV source in accordance with an aspect of an embodiment.
  • FIG. 5B is enlarged view of a portion of FIG. 5A.
  • FIG. 6 is a functional block diagram of a system for controlling a heater assembly for a passageway for an EUV source in accordance with an aspect of an embodiment.
  • FIG. 7 is a timing diagram for operation of a passageway in accordance with an aspect of an embodiment.
  • FIG. 8 is a flow chart for a method of operating a passageway in accordance with an aspect of an embodiment.
  • FIG. 9 is a flow chart for a method of operating a passageway in accordance with an aspect of an embodiment.
  • FIG. 10 is a flow chart for a method of operating a passageway in accordance with an aspect of an embodiment.
  • the EUV radiation source 10 may include a pulsed or continuous drive laser source 22, which may for example be a pulsed gas discharge CO2 laser source producing a beam 12 of radiation at from about 1 pm to about 10.6 pm.
  • the pulsed gas discharge CO2 laser source may have DC or RF excitation operating at high power and at a high pulse repetition rate.
  • the EUV radiation source 10 also includes a target material delivery system 24 for delivering target material in the form of liquid droplets or a continuous liquid stream.
  • the target material is a liquid, but it could also be a solid or gas.
  • the target material may be made up of tin or a tin compound, although other materials could be used.
  • the target material delivery system 24 introduces droplets 14 of the target material into the interior of a vacuum chamber 26 having walls 27 to an irradiation region 28 where the target material may be irradiated to produce plasma.
  • the vacuum chamber 26 may be provided with a liner.
  • an irradiation region is a region where target material irradiation may or is intended to occur, and is an irradiation region even at times when no irradiation is actually occurring.
  • the EUV light source may also include a beam steering system 32.
  • the components are arranged so that the droplets 14 travel substantially horizontally.
  • the direction from the drive laser 22 towards the irradiation region 28, that is, the nominal direction of propagation of the beam 12, may be taken as the Z axis.
  • the path the droplets 14 take from the target material delivery system 24 to the irradiation region 28 may be taken as the X axis.
  • the view of FIG. 1 is thus normal to the XZ plane. While a system in which the droplets 14 travel substantially horizontally is depicted, it will be understood by one having ordinary skill in the art the other arrangements can be used in which the droplets travel vertically or at some angle with respect to gravity between and including 90 degrees (horizontal) and 0 degrees (vertical).
  • the EUV radiation source 10 may also include an EUV light source controller system
  • the EUV radiation source 10 may also include a detector such as a target position detection system which may include one or more droplet imagers 70 that generate an output indicative of the absolute or relative position of a target droplet, e.g., relative to the irradiation region 28, and provide this output to a target position detection feedback system 62.
  • a target position detection system which may include one or more droplet imagers 70 that generate an output indicative of the absolute or relative position of a target droplet, e.g., relative to the irradiation region 28, and provide this output to a target position detection feedback system 62.
  • the target material delivery system 24 may include a target delivery control system 90.
  • the target delivery control system 90 is operable in response to a signal, for example, the target error described above, or some quantity derived from the target error provided by the system controller 60, to adjust paths of the droplets 14 through the irradiation region 28. This may be accomplished, for example, by repositioning the point at which a target delivery mechanism 92 releases the droplets 14. The droplet release point may be repositioned, for example, by tilting the target delivery mechanism 92 or by laterally translating the target delivery mechanism 92.
  • the target delivery mechanism 92 extends into the chamber 26 and is externally supplied with target material and a gas source to place the target material in the target delivery mechanism 92 under pressure.
  • the system also includes a target material receptacle 96 that catches unused droplets of target material, that is, droplets of target material that have not been converted.
  • the radiation source 10 may also include one or more optical elements.
  • a collector 30 is used as an example of such an optical element, but the discussion applies to other optical elements as well.
  • the collector 30 may be a normal incidence reflector, for example, implemented as an MLM with additional thin barrier layers, for example EEC, ZrC, SisN4or C, deposited at each interface to effectively block thermally -induced interlayer diffusion.
  • additional thin barrier layers for example EEC, ZrC, SisN4or C
  • Other substrate materials such as aluminum (Al) or silicon (Si) can also be used.
  • the collector 30 may be in the form of a prolate ellipsoid, with a central aperture to allow the laser radiation 12 to pass through and reach the irradiation region 28.
  • the collector 30 may be, e.g., in the shape of a ellipsoid that has a first focus at the irradiation region 28 and a second focus at a so-called intermediate point 40 (also called the intermediate focus) where the EUV radiation may be output from the EUV radiation source 10 and input to, e.g., an integrated circuit lithography scanner 50 which uses the radiation, for example, to process a silicon wafer workpiece 52 in a known manner using a reticle or mask 54. The silicon wafer workpiece 52 is then additionally processed in a known manner to obtain an integrated circuit device.
  • the EUV radiation may input to an inspection apparatus for detecting defects or measuring dimensions during the semiconductor manufacturing process.
  • the buffer gas e.g., hydrogen
  • target material debris impinges on an upper portion of the exhaust outlet. This results in large amounts of target material deposition on the chamber liner and the throat of the exhaust outlet. Because the surfaces in the chamber are typically at temperatures well below the melting temperature of the target material, any target material that accumulates due to deposition on these surfaces will remain in place.
  • the measures adopted are active, that is, be able to respond to changes in operational parameters that affect target material accumulation such as changes in flow recipe, plasma configuration, or drive laser power.
  • a thermally-cycled module is provided to manage target material accumulation and draining in the vicinity of the exhaust outlet.
  • This thermally-cycled module is referred to herein as a target material passageway.
  • the target material passageway is implemented as a liner insert that enables active control of the exhaust surface temperatures.
  • the exhaust surface temperatures can be controlled depending on whether or not the source is producing plasma.
  • the target material passageway may include heating elements such as electric resistive heaters that can be activated as needed to regulate the temperature of the target material passageway plasma-facing surfaces.
  • mounting and stand-off features are provided that keep the target material passageway at a fixed distance from a water cooled or a gas cooled upper liner (UL) provided to absorb excess heat.
  • UL gas cooled upper liner
  • the target material passageway has two modes of operation or states.
  • the target material passageway operates in a first mode or cold mode when the source is producing plasma.
  • the heaters are off and any heat coupled to the target material passageway from the plasma is transferred across a gap established by a channel carrying a buffer gas gap to the water-cooled or gas cooled UL.
  • the heat transfer from the target material passageway to the UL keeps the temperature of the target material passageway below the melting temperature of the target material and allows target material to accumulate on the exhaust port surface.
  • the low target material passageway temperature caused by heat transfer to the UL also reduces or eliminates the risk of spitting by ensuring accumulated target material remains solid and so not susceptible to spitting.
  • the target material passageway operates in a second mode or hot mode when the source is not producing plasma.
  • the heaters are on and coupling enough heat into the target material passageway to maintain the target material passageway surface temperature above the target material melting temperature while accounting for the additional heat loss across the channel to the UL.
  • any target material that accumulates on the target material passageway during plasma production is dripped off to an external accumulation location and away from any plasma-facing surfaces
  • FIG. 2A shows a source configuration according to an aspect of an embodiment having a chamber 26 defined by liner 27 and an inlet 100 through a collector 30.
  • the circumference or inner periphery of an exhaust port 400 is provided with a passageway 420.
  • the passageway 420 is provided with a heater assembly 430 at the outer periphery of the passageway 420.
  • the heater assembly 430 and the passageway 420 are integral parts forming a single assembly.
  • the passageway 420 is normally maintained at a temperature below the melting point of the target material so the target material accumulates on the passageway 420 in a solid form.
  • the passageway 420 is placed in thermal communication with a gas channel as shown in FIGS. 5 A and 5B with FIG. 5B being a magnification of the inset in the dotted rectangular box in FIG. 5A.
  • the passageway 420 is in thermal communication with a channel 510 through which buffer gas is caused to flow.
  • the channel 510 is in turn in thermal communication with an upper liner 500 through which a cooling fluid such as water flows or gas flows.
  • This arrangement provides active cooling of the passageway 420 so that when the active application of heat by the resistive element is discontinued the passageway 420 will rapidly transition from above the melting temperature of the target material to below the melting temperature of the target material.
  • the thermal conduction resistance of the gap or channel 510 between the target material passageway 420 and the upper liner 500 increases with increasing gap thickness, dimension D in FIG. 5B. If the dimension D is too large then the thermal resistance of the channel 510 will be too high to ensure that the temperature of the target material passageway 420 will stay below the target material melting temperature when the source is producing plasma. If D is too small, the thermal resistance of the channel 510 will be too low to ensure that temperatures of the target material passageway 420 can be maintained above target material melting temperature without requiring excessive heater power. According to one aspect of an embodiment the width D of the channel 510 is selected to be in a range of about 3 millimeters (mm) to about 8 mm.
  • the buffer gas flowing through the channel 510 may be carbon dioxide, helium, or hydrogen.
  • the flow rate for the gas in the channel 510 is selected to transport sufficient amounts of heat although the primary path for heat flow will be transverse to the direction of gas flow.
  • the gas flow may be, for example, in the range of about one percent to about ten percent of the total system flow. In some implementations a flow of less than about one percent of total system flow incurs a risk of failing to provide sufficient cooling. In some implementations a flow of more than about ten percent total system flow incurs the risk of unduly disturbing the overall flow patterns in the chamber.
  • the heater assembly 430 can be powered on and off in accordance with any one of a variety of control strategies. For example, activation of the heater assembly 430 and elevation of the temperature of the passageway 420 could be part of scheduled routine maintenance after a given number of pulses (for example, several gigapulses) or a given duration of machine time operation.
  • the heater assembly 430 could be operated under the control of a heater assembly controller 450.
  • the heater assembly controller 450 would be arranged to have a first state in which it supplies power to the heater assembly 430 and a second state in which it does not supply power to the heater assembly 430.
  • the heater assembly for controller 450 can operate in response to a source state signal generated by the EUV light source controller system 60.
  • the source state signal may be indicative of whether the source is in a first state or a second state.
  • the first state may correspond to a state in which the drive laser is on, i.e., generating a continuous or pulsed drive laser beam
  • the second state may correspond to a state in which the drive laser is off, i.e., not generating a continuous or pulsed drive laser beam.
  • the first state may correspond to a state in which the drive laser is on has recently been on, i.e., generating a continuous or pulsed drive laser beam
  • the second state may correspond to a state in which the drive laser is has been off, i.e., not generating a continuous or pulsed drive laser beam, for a period of time having a predetermined duration.
  • the first state may correspond to a state in the source is producing EUV radiation, i.e., in which the drive laser is on and the laser beam is striking droplets
  • the second state may correspond to a state in which the EUV source is not producing EUV radiation either because the drive laser is off or because the laser beam is missing the droplets.
  • FIG. 7 is a timing diagram for an example of operation in which the x-axis is time in arbitrary units.
  • the source has a first state (e.g., plasma on or plasma generation state) and a second state (e.g., plasma off or plasma non-generation state) as described above.
  • the temperature of the passageway 420 is below a melting temperature of the target material when the source is in the first state and the drive laser is on.
  • the passageway 420 is heated so that the temperature of the drip off throat 420 rises to above the target material melting temperature.
  • the temperature of the passageway 420 is permitted to drop below the target material melting temperature.
  • the curved line breaks are intended to indicate that the duration of the interval in which the source is in the first state will in general be substantially longer than the interval in which the source is in the second state.
  • the duration of the first state may be measured in terms of time taken to generate a given number of pulses, for example, several gigapulses, i.e., about 5 hours to about 20 hours.
  • the duration of the second state may be on the order of tens of minutes, for example, in the range of about 10 minutes to about 90 minutes.
  • the high temperature TTH may be in a range, for example, of about 240 °C up to about 290 °C.
  • the low temperature TTL may be in a range, for example, of about 225 °C down to 180 °C and even lower.
  • step S50 the passageway temperature is made greater than the target material melting temperature. This may be for a predetermined duration or may be until a signal is received indicating that the source should be placed in a state of readiness for continued operation.
  • the apparatus of clause 10 further comprising a drive laser for irradiating the target material and wherein the first state is a drive laser on state in which the drive laser generates continuous or pulsed laser radiation and the second state is a drive laser off state in which the drive laser does not generate continuous or pulsed laser radiation.
  • a method of removing debris generated in a radiation source vessel having an exhaust outlet and a passageway comprising: controlling a temperature of at least part of the passageway to be below a melting temperature of the debris is in a first state; and controlling the temperature of the at least part of the passageway to be above the melting temperature of the debris at least part of a time when the radiation source vessel is in a second state.
  • the first state is a plasma generation state in which target material is irradiated to generate extreme ultraviolet radiation at an irradiation site and the second state is a plasma non-generation state in which the target material is not irradiated.
  • a method of manufacturing a semiconductor device comprising: providing a substrate having a surface with a photoresist layer; directing radiation to the surface with the photoresist layer from a radiation source comprising a chamber, a gas flow system arranged to cause a flow of gas through a portion of the chamber, the gas flow system having at least one exhaust outlet positioned in a wall of the chamber, the gas carrying target material as the gas passes through an exhaust outlet, a passageway arranged around at least part of an inner surface of the exhaust outlet, and a heater in thermal communication with the passageway to transfer a pattern from a mask onto the photoresist layer; and removing a portion of the photoresist layer to form the pattern over the substrate.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne des systèmes et des procédés pour produire un rayonnement ultraviolet extrême (EUV) à partir d'une matière cible dans un récipient. Des flux de gaz transportent de la vapeur de matière cible et des débris et déposent une partie de la matière cible sur des surfaces à l'intérieur du récipient, y compris des surfaces intérieures d'un orifice d'échappement, des mesures étant adoptées pour réduire la quantité de matière cible déposée pouvant réintégrer les flux de gaz.
PCT/EP2025/057430 2024-03-28 2025-03-18 Appareil et procédé de contrôle de dispersion de contaminants dans une source de rayonnement euv Pending WO2025201973A1 (fr)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070018119A1 (en) * 2005-07-21 2007-01-25 Ushiodenki Kabushiki Kaisha Device for producing extreme uv radiation

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Publication number Priority date Publication date Assignee Title
US20070018119A1 (en) * 2005-07-21 2007-01-25 Ushiodenki Kabushiki Kaisha Device for producing extreme uv radiation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"APPARATUS FOR AND METHOD OF CONTROLLING CONTAMINANT DISPERSAL IN EUV RADIATION SOURCE", vol. 721, no. 31, 29 March 2024 (2024-03-29), XP007152547, ISSN: 0374-4353, Retrieved from the Internet <URL:https://www.researchdisclosure.com/database/RD721031> [retrieved on 20240329] *

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