WO2025207150A2 - Dispositifs et systèmes de réduction d'interférence magnétique - Google Patents

Dispositifs et systèmes de réduction d'interférence magnétique

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Publication number
WO2025207150A2
WO2025207150A2 PCT/US2024/053342 US2024053342W WO2025207150A2 WO 2025207150 A2 WO2025207150 A2 WO 2025207150A2 US 2024053342 W US2024053342 W US 2024053342W WO 2025207150 A2 WO2025207150 A2 WO 2025207150A2
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
magnetic field
magnetic shield
shield
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/US2024/053342
Other languages
English (en)
Other versions
WO2025207150A3 (fr
Inventor
Robert Daniel DELANEY
Kyle Stephen Mckay
William J. Baker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quantinuum LLC
Original Assignee
Quantinuum LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US18/901,579 external-priority patent/US20250142796A1/en
Application filed by Quantinuum LLC filed Critical Quantinuum LLC
Publication of WO2025207150A2 publication Critical patent/WO2025207150A2/fr
Publication of WO2025207150A3 publication Critical patent/WO2025207150A3/fr
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • H01F27/366—Electric or magnetic shields or screens made of ferromagnetic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0273—Magnetic circuits with PM for magnetic field generation
    • H01F7/0278—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/20—Electromagnets; Actuators including electromagnets without armatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • H01F27/361—Electric or magnetic shields or screens made of combinations of electrically conductive material and ferromagnetic material

Definitions

  • Various embodiments relate to apparatuses, systems, and methods for magnetic interference reduction.
  • Various embodiments relate to magnetic interference reduction in quantum processing systems.
  • Quantum processors may use magnetic fields, for example static magnetic fields, for various operational purposes.
  • the magnetic field needs to be as uniform as possible and external interference on the magnetic field should be reduced.
  • the quantum apparatus includes a magnetic field generator configured to generate a magnetic field in a magnetic field volume; and a magnetic interference reduction device.
  • the magnetic interference reduction device includes a first magnetic shield.
  • the first magnetic shield is a planar magnetic shield that is positioned in proximity of the magnetic field volume approximately parallel to a direction of the magnetic field.
  • the first magnetic shield is configured to reduce interference on the magnetic field along the direction of the magnetic field.
  • the direction of the magnetic field is a quantization axis of the magnetic field volume.
  • the first magnetic shield comprises a cutout parallel to the direction of the magnetic field, the cutout is configured to reduce distortion caused by the first magnetic shield on the magnetic field.
  • the first magnetic shield comprises a continuous path of a high magnetic permeability material from a first edge of the planar magnetic shield to a second edge of the planar magnetic shield approximately in parallel to the direction of the magnetic field.
  • the quantum apparatus further includes a second magnetic shield, the second magnetic shield being a planar magnetic shield positioned in proximity of the magnetic field volume approximately in parallel to the direction of the magnetic field, wherein the second magnetic shield is configured to reduce interference on the magnetic field along the direction of the magnetic field.
  • a first plane of the first magnetic shield and a second plane of the second magnetic shield are approximately parallel.
  • the first magnetic shield comprises a cutout parallel to the direction of the magnetic field, the cutout is configured to reduce a distortion caused by the first magnetic shield on the magnetic field.
  • the second magnetic shield comprises a cutout parallel to the direction of the magnetic field, the cutout is configured to reduce a distortion caused by the second magnetic shield on the magnetic field.
  • the magnetic interference reduction device includes a first magnetic shield.
  • the first magnetic shield is a planar magnetic shield that is positioned approximately parallel to a direction of a magnetic field.
  • the first magnetic shield is configured to reduce interference on the magnetic field along the direction of the magnetic field and the first magnetic shield comprises a cutout parallel to the direction of the magnetic field.
  • the cutout is configured to reduce a distortion caused by the first magnetic shield on the magnetic field.
  • the magnetic interference reduction device further includes a second magnetic shield that is a planar magnetic shield and that is positioned approximately in parallel to the direction of the magnetic field, wherein the second magnetic shield is configured to reduce interference on the magnetic field along the direction of the magnetic field.
  • the first planar magnetic shield comprises a first continuous path of a high magnetic permeability material from a first edge of the first planar magnetic shield to a second edge of the first planar magnetic shield approximately in parallel to the direction of the magnetic field; and the second planar magnetic shield comprises a second continuous path of a high magnetic permeability material from a first edge of the second planar magnetic shield to a second edge of the second planar magnetic shield approximately in parallel to the direction of the magnetic field.
  • the first planar magnetic shield comprises a first shielding layer comprising a high magnetic permeability material; a first foam layer covering the first shielding layer, the first foam layer configured to protect the first shielding layer by absorbing shock; and a first metal layer configured to protect the first foam layer; and the second planar magnetic shield comprises: a second shielding layer; a second foam layer covering the second shielding layer, the second foam layer configured to protect the second shielding layer by absorbing shock; and a second metal layer configured to protect the second foam layer.
  • FIG. 3 is a schematic diagram illustrating an example magnetic shield, according to an example embodiment.
  • FIG. 4 is a schematic diagram illustrating an example magnetic shield, according to an example embodiment.
  • FIG. 5 is a schematic diagram illustrating example magnetic shields, according to an example embodiment.
  • FIG. 6 is a schematic diagram illustrating various components of a quantum apparatus, according to an example embodiment.
  • FIG. 7 is a schematic diagram illustrating an example magnetic shield, according to an example embodiment.
  • FIG. 8 is a schematic diagram illustrating a cross sectional view of an example magnetic shield, according to an example embodiment.
  • FIG. 9 is a schematic diagram illustrating an example quantum computing system comprising a planar magnetic shield, according to an example embodiment.
  • FIG. 10 provides a schematic diagram of an example controller of a quantum computer, according to various embodiments.
  • FIG. 11 provides a schematic diagram of an example computing entity of a quantum computer system that may be used in accordance with an example embodiment.
  • Various embodiments of the present disclosure provide a device for reducing magnetic field interference on a magnetic field.
  • the magnetic field may be a static magnetic field or include a static magnetic field component.
  • a quantum processor may use static magnetic fields for quantum gates, cooling of the motional modes of the quantum objects, or readout/measurement of our qubit states. Therefore, there may be a need for using magnetic fields and protecting the magnetic field against interference in quantum processors.
  • Various embodiments may protect a static magnetic field used in penning traps against interference. In penning traps, static magnetic fields (in combination with static electric fields), may be used to trap a quantum object.
  • the device for reducing magnetic field interference includes a magnetic shield, in various embodiments.
  • a desired magnetic field is generated within a volume and the magnetic shield is configured to reduce interference, within the volume, by external magnetic fields.
  • a system such as an experiment system and/or controlled quantum state evolution system is performed within the volume.
  • magnetic shields may be used to surround and/or enclose a volume containing the system (e.g., experiment system, controlled quantum state evolution system, and/or the like) in a high magnetic permeability material.
  • the system e.g., experiment system, controlled quantum state evolution system, and/or the like
  • a high magnetic permeability material e.g., aluminum, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, and/or the like.
  • such an approach may be costly, add to the weight and volume of the system, and may highly distort the magnetic field that needs to be protected.
  • such an approach reduces access to the volume and the system disposed therein.
  • providing optical and/or electrical signals to the volume and the system disposed therein is complicated by the volume being surrounded and/or enclosed by the shielding material. Alignment of provided optical signals with target locations and/or optical elements of the system are also complicated by the volume being surrounded and/or enclosed by the shielding material
  • the system (e.g., experiment system, controlled quantum state evolution system, and/or the like) using the magnetic field (for example a static magnetic field) may be sensitive to interference along a specific direction.
  • the system may be sensitive to magnetic field interference along the quantization axis.
  • such a system may be significantly less sensitive to magnetic field interference in directions other than quantization axis.
  • such a system may be, at least to first order, not sensitive to magnetic field interference in directions other than the quantization axis.
  • the system includes a magnetic field generator configured to generate a desired magnetic field in the direction of the quantization axis within the volume.
  • the magnetic field generator e.g., a pair of Helmholtz coils, set of permanent magnets, etc., is configured to generate a desired magnetic field in a quantization axis direction that is applied to the quantum objects (e.g., atom, ion, molecule, quantum particle, quantum dot, and/or the like) confined by a quantum object trap.
  • the quantum objects e.g., atom, ion, molecule, quantum particle, quantum dot, and/or the like
  • Various embodiments of the present disclosure therefore provide reduction in magnetic field interference in the direction of the quantization axis within a volume.
  • the system e.g., experiment system, controlled quantum state evolution system
  • the system is configured to operate with a desired magnetic field in the direction of a quantization axis.
  • distortion to the desired magnetic field may cause various errors in the functioning of the system.
  • Various embodiments of the present disclosure reduce distortion caused by the magnetic shield on the desired magnetic field.
  • the magnetic interference reduction device 100 includes a magnetic shield 105.
  • the magnetic shield 105 is a planar magnetic shield.
  • the magnetic shield 105 may be nearly planar.
  • the magnetic shield 105 may not be planar.
  • the magnetic shield 105 includes a first section 102 and a second section 104, in the illustrated embodiment.
  • the magnetic shield may be positioned approximately parallel to a direction of a magnetic field 110.
  • the magnetic field may be produced by a pair of magnets, for example magnet 112 and magnet 114.
  • the magnets may be permanent magnets or magnetic coils (e.g., Helmholtz coils and/or the like).
  • the magnetic field may be produces using any number of magnetic elements that may include any of permanent magnets and/or magnetic coils.
  • the magnetic shield may include a cutout 106 parallel to the direction of the magnetic field 110.
  • the magnetic shield is configured to reduce interference on the magnetic field along the direction of the magnetic field 110 while reduce distortion caused by the magnetic shield on the magnetic field 110.
  • the cutout 106 is configured to reduce a distortion caused by the magnetic shield on the magnetic field 110.
  • the cutout 106 may decrease the amount of the magnetic field 110 that is drawn into the magnetic shield 105, thus reducing the distortion.
  • the magnetic interference reduction device 100 may comprise a single section without any cutout.
  • a magnetic field reduction that comprises a single section may provide for increased simplicity and reduced manufacturing costs.
  • the magnetic shield may include a continuous path of a high magnetic permeability material from a first edge of the magnetic shield to a second edge of the magnetic shield approximately in parallel to the direction of the magnetic field.
  • the first or second sections of the magnetic shield each include a continuous path of a high magnetic permeability material from an edge closer to the magnet 114 to the edge closer to the magnet 112.
  • the high magnetic permeability material has a magnetic permeability of at least 70,000, at least 80,000, or at least 90,000.
  • the magnetic shield does not include any edge-to-edge cutouts in a direction that crosses the direction of a magnetic field 110 such that the cutout would prevent a continuous path of a high magnetic permeability material from an edge closer to the magnet 114 to the edge closer to the magnet 112.
  • the interference magnetic field lines may be redirected into the material rather than the volume of the magnetic field 110 that is being shielded.
  • the high magnetic permeability material includes a mu-metal layer and/or a nickel-iron alloy.
  • a nickel-iron alloy other than a mu-metal may be used.
  • the first or second sections of the magnetic shield may have any geometrical shapes.
  • FIG. 2 A illustrates a circular shape for the first section 202 and the second section 204 of the magnetic shield 200.
  • FIG. 2B illustrates a triangular shape for the first section 252 and the second section 254 of the magnetic shield 250.
  • any other geometrical shapes for the first and second sections of the magnetic shield may be used.
  • the first and second sections of the magnetic shield may have different geometrical shapes. Both the magnetic shield 200 and the magnetic shield 250 include linear cutouts.
  • the magnetic shield 300 includes a cutout that includes a linear portion and an open area portion.
  • the magnetic shield includes an open area 350 between the first section 302 and the second section 304 of the magnetic shield 300.
  • the open area 350 may provide for space to place various sub-systems or components using the magnetic field 110.
  • the magnetic shield may be placed in the same plane or in an adjacent plane to the magnetic field 110.
  • the magnetic shield 300 may be placed in an offset plane with respect to the magnetic field 110.
  • the cutout 106 may remain approximately parallel to the direction of the magnetic field 110.
  • the magnetic interference reduction includes the first magnetic shield 300 and a second magnetic shield 500.
  • the second magnetic shield 500 may be approximately parallel to the direction of the magnetic field 110 and/or approximately parallel to the first magnetic shield 300.
  • the magnetic interference reduction device may have one or more magnetic shields.
  • the magnetic interference reduction device has two magnetic shields 300 and 500, however in other examples more magnetic shields such as three, four, five, etc. may be used.
  • the other planar magnetic shield(s) are configured to reduce interference on the magnetic field along the direction of the magnetic field.
  • the magnetic shields may be approximately parallel to each other and/or the magnetic field 110.
  • the magnetic shields may not be parallel to each other and/or the magnetic field 110 and may be oriented at various angles.
  • the magnetic shields may be more effective in reducing the interference when they are approximately in parallel with each other and/or with the magnetic field 110.
  • various magnetic shields may have the same or different overall geometrical shapes or different geometrical shapes of each section of the magnetic shield.
  • some of the magnetic shields may not have the cutout.
  • some of the magnetic shields that are placed further away from the magnetic fields 110 may not need the cutout because they may cause less distortion on the magnetic field 110.
  • the quantum apparatus 600 includes a quantum object trap 602.
  • the quantum object trap 602 may be configured to trap a quantum object using a magnetic field 110.
  • the quantum apparatus 600 may include a planar magnetic shield positioned in proximity of the quantum object trap 602 approximately parallel to a direction of the magnetic field 110.
  • the planar magnetic shield is configured to reduce interference on the magnetic field 110 along the direction of the magnetic field.
  • the direction of the magnetic field is the quantization axis of the quantum object trap 602.
  • the quantum apparatus 600 may include one or more planar magnetic shields.
  • the quantum apparatus 600 may include first magnetic shield 300 and second magnetic shield 500.
  • the planar magnetic shield(s) may be similar to and have similar function(s) with respect to the magnetic field 110 as any of the magnetic shield(s) described herein, for example as described with reference to FIGS. 1-5.
  • the planar magnetic shield includes a shielding layer 802, a first foam layer 804 and a first metal layer 808.
  • the shielding layer comprises a high magnetic permeability material such as mu-metal and/or a nickel-iron alloy, for example.
  • the planar magnetic shield may include a second foam layer 806 and a second metal layer 810.
  • the metal layers 808 and 810 may include aluminum.
  • the manipulation signals generated by the manipulation sources 60 are provided to the interior of the cryostat and/or vacuum chamber 40 (where the quantum object confinement apparatus 930 is located) via corresponding optical paths 66 (e.g., 66 A, 66B, 66C).
  • the one or more manipulation sources 60 may comprise one or more lasers (e.g., optical lasers, microwave sources, and/or the like).
  • each manipulation source 60 is configured to generate a manipulation signal having a respective characteristic wavelength in the microwave, infrared, visible, or ultraviolet portion of the electromagnetic spectrum.
  • the one or more manipulation sources 60 are configured to manipulate and/or cause a controlled quantum state evolution of one or more quantum objects within the confinement apparatus.
  • the lasers may provide one or more laser beams to quantum objects trapped within the confinement apparatus 930 within the cryostat and/or vacuum chamber 40.
  • the manipulation sources 60 may be configured to generate one or more beams that may be used to initialize an quantum object into a state of a qubit space such that the quantum object may be used as a qubit of the quantum computer, perform one or more gates on one or more qubits of the quantum computer, read and/or determine a state of one or more qubits of the quantum computer, and/or the like.
  • the quantum computer 910 includes first and second magnetic shields 952 and 954.
  • the first and second magnetic shields 952 and 954 may be configured to reduce magnetic field interference in the direction of a quantization axis 958 within a volume 956. While reducing the magnetic field interference, the first and second magnetic shields 952 and 954 allow access for providing optical signals (e.g., from manipulation sources 60) and/or electrical signals (e.g., from voltage source 50) to the volume to the volume 956.
  • the quantum computer 910 comprises an optics collection system configured to collect and/or detect photons generated by qubits (e.g., during reading procedures).
  • the optics collection system may comprise one or more optical elements (e.g., lenses, mirrors, waveguides, fiber optics cables, and/or the like) and one or more photodetectors.
  • the photodetectors may be photodiodes, photomultipliers, charge-coupled device (CCD) sensors, complementary metal oxide semiconductor (CMOS) sensors, Micro-Electro-Mechanical Systems (MEMS) sensors, and/or other photodetectors that are sensitive to light at an expected fluorescence wavelength of the qubits of the quantum computer.
  • the detectors may be in electronic communication with the controller 30 via one or more A/D converters 1025 (see FIG. 10) and/or the like.
  • the quantum computer 910 comprises one or more voltage sources 50.
  • the voltage sources 50 may comprise a plurality of voltage drivers and/or voltage sources and/or at least one RF driver and/or voltage source.
  • the voltage sources 50 may be electrically coupled to the corresponding potential generating elements (e.g., electrodes) of the confinement apparatus 930, in an example embodiment.
  • a computing entity 10 is configured to allow a user to provide input to the quantum computer 910 (e.g., via a user interface of the computing entity 10) and receive, view, and/or the like output from the quantum computer 910.
  • a quantum object confinement apparatus 930 is incorporated into a system (e.g., a quantum computer 910) comprising a controller 30.
  • the controller 30 is configured to control various elements of the system (e.g., quantum computer 910).
  • the controller 30 may be configured to control the voltage sources 50, a cryostat system and/or vacuum system controlling the temperature and pressure within the cryostat and/or vacuum chamber 40, manipulation sources 60, cooling system, and/or other systems controlling the environmental conditions (e.g., temperature, humidity, pressure, and/or the like) within the cryostat and/or vacuum chamber 40 and/or configured to manipulate and/or cause a controlled evolution of quantum states of one or more quantum objects confined by the quantum object confinement apparatus 930.
  • the controller 30 may be configured to receive signals from one or more optics collection systems.
  • the controller 30 may comprise various controller elements including processing elements 1005, memory 1010, driver controller elements 1015, a communication interface 1020, analog-digital converter elements 1025, and/or the like.
  • the processing elements 1005 may comprise programmable logic devices (CPLDs), microprocessors, coprocessing entities, applicationspecific instruction-set processors (ASIPs), integrated circuits, application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), programmable logic arrays (PLAs), hardware accelerators, other processing devices and/or circuitry, and/or the like, and/or controllers.
  • the term circuitry may refer to an entirely hardware embodiment or a combination of hardware and computer program products.
  • the processing element 1005 of the controller 30 comprises a clock and/or is in communication with a clock.
  • the memory 1010 may comprise non-transitory memory such as volatile and/or non-volatile memory storage such as one or more of as hard disks, ROM, PROM, EPROM, EEPROM, flash memory, MMCs, SD memory cards, Memory Sticks, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and/or the like.
  • volatile and/or non-volatile memory storage such as one or more of as hard disks, ROM, PROM, EPROM, EEPROM, flash memory, MMCs, SD memory cards, Memory Sticks, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2
  • the memory 1010 may store a queue of commands to be executed to cause a quantum algorithm and/or circuit to be executed (e.g., an executable queue), qubit records corresponding the qubits of quantum computer (e.g., in a qubit record data store, qubit record database, qubit record table, and/or the like), a calibration table, computer program code (e.g., in a one or more computer languages, specialized controller language(s), and/or the like), and/or the like.
  • a queue of commands to be executed to cause a quantum algorithm and/or circuit to be executed e.g., an executable queue
  • qubit records corresponding the qubits of quantum computer e.g., in a qubit record data store, qubit record database, qubit record table, and/or the like
  • a calibration table e.g., computer program code (e.g., in a one or more computer languages, specialized controller language(s), and/or the like), and/or the like.
  • execution of at least a portion of the computer program code stored in the memory 1010 causes the controller 30 to perform one or more steps, operations, processes, procedures and/or the like described herein for providing manipulation signals to quantum object locations and/or collecting, detecting, capturing, and/or measuring indications of emitted signals emitted by quantum objects located at corresponding quantum object locations of the quantum object confinement apparatus 930.
  • the driver controller elements 1015 may include one or more drivers and/or controller elements each configured to control one or more drivers.
  • the driver controller elements 1015 may comprise drivers and/or driver controllers.
  • the driver controllers may be configured to cause one or more corresponding drivers to be operated in accordance with executable instructions, commands, and/or the like scheduled and executed by the controller 30 (e.g., by the processing element 1005).
  • the driver controller elements 1015 may enable the controller 30 to operate a voltage sources 50, manipulation sources 60, cooling system, and/or the like.
  • the drivers may be laser drivers configured to operate one or manipulation sources 60 to generate manipulation signals; vacuum component drivers; drivers for controlling the flow of current and/or voltage applied to electrodes used for maintaining and/or controlling the trapping potential of the quantum object confinement apparatus 930 (and/or other drivers for providing driver action sequences to potential generating elements of the quantum object confinement apparatus); cryostat and/or vacuum system component drivers; cooling system drivers, and/or the like.
  • the controller 30 comprises means for communicating and/or receiving signals from one or more optical receiver components (e.g., photodetectors of the optics collection system).
  • the controller 30 may comprise one or more analog-digital converter elements 1025 configured to receive signals from one or more optical receiver components (e.g., a photodetector of the optics collection system), calibration sensors, and/or the like.
  • the controller 30 may comprise a communication interface 1020 for interfacing and/or communicating with a computing entity 10.
  • the controller 30 may comprise a communication interface 1020 for receiving executable instructions, command sets, and/or the like from the computing entity 10 and providing output received from the quantum computer 910 (e.g., from an optical collection system) and/or the result of a processing the output to the computing entity 10.
  • the computing entity 10 and the controller 30 may communicate via a direct wired and/or wireless connection and/or via one or more wired and/or wireless networks 20.
  • FIG. 11 provides an illustrative schematic representative of an example computing entity 10 that can be used in conjunction with embodiments of the present invention.
  • a computing entity 10 is configured to allow a user to provide input to the quantum computer 910 (e.g., via a user interface of the computing entity 10) and receive, display, analyze, and/or the like output from the quantum computer 910.
  • a computing entity 10 can include an antenna 912, a transmitter 904 (e.g., radio), a receiver 906 (e.g., radio), and a processing element 908 that provides signals to and receives signals from the transmitter 904 and receiver 906, respectively.
  • the signals provided to and received from the transmitter 904 and the receiver 906, respectively, may include signaling information/data in accordance with an air interface standard of applicable wireless systems to communicate with various entities, such as a controller 30, other computing entities 10, and/or the like.
  • the computing entity 10 may be capable of operating with one or more air interface standards, communication protocols, modulation types, and access types.
  • the computing entity 10 may be configured to receive and/or provide communications using a wired data transmission protocol, such as fiber distributed data interface (FDDI), digital subscriber line (DSL), Ethernet, asynchronous transfer mode (ATM), frame relay, data over cable service interface specification (DOCSIS), or any other wired transmission protocol.
  • a wired data transmission protocol such as fiber distributed data interface (FDDI), digital subscriber line (DSL), Ethernet, asynchronous transfer mode (ATM), frame relay, data over cable service interface specification (DOCSIS), or any other wired transmission protocol.
  • FDDI fiber distributed data interface
  • DSL digital subscriber line
  • Ethernet asynchronous transfer mode
  • ATM asynchronous transfer mode
  • frame relay frame relay
  • DOCSIS data over cable service interface specification
  • the computing entity 10 may be configured to communicate via wireless external communication networks using any of a variety of protocols, such as general packet radio service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 IX (IxRTT), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile Communications (GSM), Enhanced Data rates for GSM Evolution (EDGE), Time Division-Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution-Data Optimized (EVDO), High Speed Packet Access (HSPA), High-Speed Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), ultra-wideband (UWB), infrared (IR) protocols, near field communication (NFC) protocols, Wibree, Bluetooth protocols, wireless universal serial bus (USB) protocols, and/or any other wireless protocol.
  • the computing entity 10 may use such protocols and standards to communicate using Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS/SSL/S ecure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), HyperText Markup Language (HTML), and/or the like.
  • Border Gateway Protocol BGP
  • Dynamic Host Configuration Protocol DHCP
  • DNS Domain Name System
  • FTP File Transfer Protocol
  • HTTP Hypertext Transfer Protocol
  • HTTP Hypertext Transfer Protocol
  • HTTP HyperText Markup Language
  • IP Internet Protocol
  • TCP Transmission Control Protocol
  • UDP User Datagram Protocol
  • DCCP Datagram Congestion Control Protocol
  • the computing entity 10 can communicate with various other entities using concepts such as Unstructured Supplementary Service information/data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual-Tone Multi-Frequency Signaling (DTMF), and/or Subscriber Identity Module Dialer (SIM dialer).
  • USSD Unstructured Supplementary Service information/data
  • SMS Short Message Service
  • MMS Multimedia Messaging Service
  • DTMF Dual-Tone Multi-Frequency Signaling
  • SIM dialer Subscriber Identity Module Dialer
  • the computing entity 10 can also download changes, add-ons, and updates, for instance, to its firmware, software (e.g., including executable instructions, applications, program modules), and operating system.
  • the computing entity 10 may also comprise a user interface device comprising one or more user input/output interfaces (e.g., a display 916 and/or speaker/ speaker driver coupled to a processing element 908 and a touch screen, keyboard, mouse, and/or microphone coupled to a processing element 908).
  • the user output interface may be configured to provide an application, browser, user interface, interface, dashboard, screen, webpage, page, and/or similar words used herein interchangeably executing on and/or accessible via the computing entity 10 to cause display or audible presentation of information/data and for interaction therewith via one or more user input interfaces.
  • the user input interface can comprise any of a number of devices allowing the computing entity 10 to receive data, such as a keypad 918 (hard or soft), a touch display, voice/speech or motion interfaces, scanners, readers, or other input device.
  • a keypad 918 can include (or cause display of) the conventional numeric (0-9) and related keys (#, *), and other keys used for operating the computing entity 10 and may include a full set of alphabetic keys or set of keys that may be activated to provide a full set of alphanumeric keys.
  • the user input interface can be used, for example, to activate or deactivate certain functions, such as screen savers and/or sleep modes.
  • the computing entity 10 can collect information/data, user interaction/input, and/or the like.
  • the computing entity 10 can also include volatile storage or memory 922 and/or nonvolatile storage or memory 924, which can be embedded and/or may be removable.
  • the non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMCs, SD memory cards, Memory Sticks, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, and/or the like.
  • the volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and/or the like.
  • the volatile and non-volatile storage or memory can store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, and/or the like to implement the functions of the computing entity 10.
  • the system (e.g., experiment system, controlled quantum state evolution system, and/or the like) using the magnetic field may be sensitive to interference along a specific direction.
  • the system may be sensitive to magnetic field interference along the quantization axis.
  • such a system may be significantly less sensitive to magnetic field interference in directions other than quantization axis.
  • such a system may be, at least to first order, not sensitive to magnetic field interference in directions other than the quantization axis.
  • the system includes a magnetic field generator configured to generate a desired magnetic field in the direction of the quantization axis within the volume.
  • the magnetic field generator e.g., a pair of Helmholtz coils, set of permanent magnets, etc.
  • the magnetic field generator is configured to generate a desired magnetic field in a quantization axis direction that is applied to the quantum objects confined by a quantum object trap.
  • Various embodiments of the present disclosure therefore provide reduction in magnetic field interference in the direction of the quantization axis within a volume. It is further desirable to lower a distortion that may be caused by the magnetic shield on the desired magnetic field.
  • the system e.g., experiment system, controlled quantum state evolution system
  • the system is configured to operate with a desired magnetic field in the direction of a quantization axis.
  • distortion to the desired magnetic field may cause various errors in the functioning of the system.
  • Various embodiments of the present disclosure reduce distortion caused by the magnetic shield on the desired magnetic field.

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Abstract

L'invention concerne un dispositif de réduction d'interférence. Le dispositif de réduction d'interférence peut comprendre un blindage magnétique positionné à proximité d'un champ magnétique. Le blindage magnétique est conçu pour réduire l'interférence sur le champ magnétique le long du sens du champ magnétique. Le blindage magnétique peut comprendre une découpe approximativement parallèle au sens du champ magnétique, la découpe est conçue pour réduire une distorsion provoquée par le blindage magnétique sur le champ magnétique.
PCT/US2024/053342 2023-11-01 2024-10-29 Dispositifs et systèmes de réduction d'interférence magnétique Pending WO2025207150A2 (fr)

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US202363595090P 2023-11-01 2023-11-01
US63/595,090 2023-11-01
US18/901,579 2024-09-30
US18/901,579 US20250142796A1 (en) 2023-11-01 2024-09-30 Magnetic interference reduction devices and systems

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CA2667640C (fr) * 2006-12-01 2016-10-04 D-Wave Systems, Inc. Blindage superconducteur pour circuit integre utilise en informatique quantique
US10790244B2 (en) * 2017-09-29 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
WO2022181408A1 (fr) * 2021-02-25 2022-09-01 国立大学法人東京大学 Diviseur atomique de l'état électronique, interféromètre atomique, dispositif de mesure de la fréquence de transition atomique, oscillateur atomique, horloge de réseau optique, ordinateur quantique, et procédé de génération des états de superposition liés aux états électroniques de l'atome
DE112022007512T5 (de) * 2022-07-11 2025-05-22 Hitachi Astemo, Ltd. Planare Spulenanordnung und Verschiebungssensor
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