WO2025253473A1 - Procédé de production de dispositif d'affichage et dispositif d'affichage - Google Patents

Procédé de production de dispositif d'affichage et dispositif d'affichage

Info

Publication number
WO2025253473A1
WO2025253473A1 PCT/JP2024/020291 JP2024020291W WO2025253473A1 WO 2025253473 A1 WO2025253473 A1 WO 2025253473A1 JP 2024020291 W JP2024020291 W JP 2024020291W WO 2025253473 A1 WO2025253473 A1 WO 2025253473A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent electrode
target
display device
protective layer
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/020291
Other languages
English (en)
Japanese (ja)
Inventor
大地 熊谷
雅貴 山中
達 岡部
哲憲 田中
貴翁 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Display Technology Corp
Original Assignee
Sharp Display Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Display Technology Corp filed Critical Sharp Display Technology Corp
Priority to PCT/JP2024/020291 priority Critical patent/WO2025253473A1/fr
Publication of WO2025253473A1 publication Critical patent/WO2025253473A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/20—Metallic electrodes, e.g. using a stack of layers

Definitions

  • This disclosure relates to a display device manufacturing method and a display device.
  • Patent Document 1 discloses an organic EL color display in which the transparent electrodes of each organic EL element have different film thicknesses corresponding to the emitted color.
  • EL is an abbreviation for ElectroLuminescence.
  • Patent Document 1 discloses an example of a method for manufacturing an organic EL color display in which each transparent electrode has a different number of layers corresponding to the emitted color.
  • this method when this method is used, there is a risk that the surface of the component located underneath a transparent electrode with a smaller number of layers may be damaged. This is because each time a transparent film is deposited and a single transparent electrode layer is patterned, the surface of that component is exposed to etchants, etc.
  • Microcavity display devices are attracting attention as a way to realize display devices with high luminous efficiency.
  • Microcavity display devices have a layered structure of reflective electrodes and transparent electrode sections, with each transparent electrode section having a different thickness (optical path length) that corresponds to the emitted color.
  • each transparent electrode section has a different number of layers corresponding to the emitted color.
  • the surface of the reflective electrode located underneath a transparent electrode section with a smaller number of layers may be damaged, causing an unintended change in the reflectivity of the reflective electrode, which could result in a decrease in the luminous efficiency of the display device.
  • a manufacturing method for a display device is a manufacturing method for a microcavity display device, and includes a first step of forming a plurality of reflective electrodes and a plurality of protective layers respectively positioned on the plurality of reflective electrodes, and a second step of forming a plurality of transparent electrode portions having different thicknesses, wherein in the second step, the plurality of transparent electrode portions are each formed above the plurality of protective layers.
  • a microcavity display device with high luminous efficiency can be realized.
  • FIG. 10 is a diagram illustrating step S11.
  • FIG. 10 is a diagram illustrating step S12.
  • FIG. 10 is a diagram illustrating steps S13 to S15.
  • FIG. 10 is a diagram illustrating step S21.
  • FIG. 10 is a diagram illustrating steps S22 to S24.
  • FIG. 10 is a diagram illustrating step S25.
  • FIG. 10 is a diagram illustrating steps S26 to S28.
  • FIG. 10 is a diagram illustrating step S11.
  • FIG. 10 is a diagram illustrating step S29.
  • FIG. 10 is a diagram illustrating steps S2a to S2c.
  • FIG. 10 is a cross-sectional view showing a schematic configuration of a plurality of reflective electrodes, a plurality of protective layers, and a plurality of transparent electrode portions according to a second embodiment of the present disclosure.
  • FIG. 11 is a cross-sectional view showing a schematic configuration of a plurality of reflective electrodes, a plurality of protective layers, and a plurality of transparent electrode portions according to a third embodiment of the present disclosure.
  • 10 is a flowchart showing main steps in a manufacturing method of a display device according to a fourth embodiment of the present disclosure.
  • Fig. 1 is a cross-sectional view showing a schematic configuration of a display device 101 according to a first embodiment of the present disclosure.
  • Fig. 2 is an exploded view showing a schematic configuration of the display device 101 according to the first embodiment of the present disclosure.
  • the display device 101 is a microcavity type display device.
  • the display device 101 includes a TFT substrate 51, a plurality of reflective electrodes 1, a plurality of protective layers 2, a plurality of transparent electrode portions 3, a plurality of optical function portions 52, and a plurality of counter electrodes 53.
  • TFT is an abbreviation for Thin Film Transistor.
  • the display device 101 includes a first subpixel 54, a second subpixel 55, and a third subpixel 56.
  • Each of the first subpixel 54, the second subpixel 55, and the third subpixel 56 has a layered structure of a reflective electrode 1, a protective layer 2, a transparent electrode portion 3, an optical function portion 52, and a counter electrode 53.
  • the TFT substrate 51 is a substrate having TFTs (not shown) electrically connected to multiple reflective electrodes 1.
  • Each of the multiple reflective electrodes 1 is an electrode that reflects light.
  • Each of the multiple reflective electrodes 1 may be either an anode or a cathode.
  • An example of the material for each of the multiple reflective electrodes 1 is silver.
  • the multiple protective layers 2 are located on top of the multiple reflective electrodes 1. In other words, one protective layer 2 is located on each reflective electrode 1.
  • the thicknesses of the multiple transparent electrode portions 3 are different from one another.
  • the transparent electrode portion 3 of the first subpixel 54 consists of a first transparent electrode layer 4, a second transparent electrode layer 5, and a third transparent electrode layer 6.
  • the transparent electrode portion 3 of the second subpixel 55 consists of a second transparent electrode layer 5 and a third transparent electrode layer 6.
  • the transparent electrode portion 3 of the third subpixel 56 consists of the third transparent electrode layer 6.
  • the multiple transparent electrode portions 3 are each located above the multiple protective layers 2. In other words, for each protective layer 2, one transparent electrode portion 3 is located above it.
  • the multiple optical function units 52 are each located above the multiple transparent electrode units 3.
  • Each of the multiple optical function units 52 includes a light-emitting layer. Examples of such light-emitting layers include an OLED layer and a QLED layer.
  • OLED is an abbreviation for Organic Light Emitting Diode.
  • QLED is an abbreviation for Quantum Light Emitting Diode.
  • Each of the multiple optical function units 52 may include at least one of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.
  • the multiple counter electrodes 53 are each located above the multiple optical function sections 52. Each of the multiple counter electrodes 53 is a transparent or translucent electrode. Each of the multiple counter electrodes 53 may be the other of an anode and a cathode. An example of the material for each of the multiple counter electrodes 53 is an alloy of silver and magnesium.
  • the first sub-pixel 54, second sub-pixel 55, and third sub-pixel 56 each allow light to be emitted by the light-emitting layer of the optical function section 52 when a current flows between the reflective electrode 1 and the counter electrode 53.
  • the multiple protective layers 2 include a first protective layer 7, a second protective layer 8, and a third protective layer 57.
  • the first protective layer 7 is the protective layer 2 of the second subpixel 55
  • the second protective layer 8 is the protective layer 2 of the third subpixel 56
  • the third protective layer 57 is the protective layer 2 of the first subpixel 54.
  • FIG. 3 is a flowchart showing the main steps in a manufacturing method for a display device 101 according to embodiment 1 of the present disclosure.
  • the manufacturing method for the display device 101 includes a first step S1 and a second step S2.
  • the first step S1 is a step of forming a plurality of reflective electrodes 1 and a plurality of protective layers 2 positioned on each of the plurality of reflective electrodes 1.
  • the second step S2 is a step of forming a plurality of transparent electrode portions 3 having different thicknesses. In the second step S2, the plurality of transparent electrode portions 3 are each formed above the plurality of protective layers 2.
  • the manufacturing method for the display device 101 uses the protective layer 2 to reduce the risk of the surface of the reflective electrode 1 being exposed to etchants or the like and being damaged. This reduces the risk of the reflectivity of the reflective electrode 1 changing unintentionally. Therefore, the manufacturing method for the display device 101 makes it possible to realize a microcavity-type display device 101 with high luminous efficiency.
  • FIG. 4 is a diagram illustrating step S11.
  • FIG. 5 is a diagram illustrating step S12.
  • FIG. 6 is a diagram illustrating steps S13 to S15.
  • the first process S1 may include steps S11 to S16.
  • Step S11 is a process for depositing a reflective film 9.
  • Step S12 is a process for depositing a protective film 10 on the reflective film 9.
  • the reflective film 9 and protective film 10 are patterned together by photolithography in step S13, etching in step S14, and peeling and cleaning in step S15, thereby forming multiple reflective electrodes 1 and multiple protective layers 2 at the same time.
  • Step S16 is a process for polycrystallizing the multiple protective layers 2 by performing an annealing treatment on the multiple protective layers 2.
  • FIG. 7 is a diagram explaining step S21.
  • FIG. 8 is a diagram explaining steps S22 to S24.
  • FIG. 9 is a diagram explaining step S25.
  • FIG. 10 is a diagram explaining steps S26 to S28.
  • FIG. 11 is a diagram explaining step S29.
  • FIG. 12 is a diagram explaining steps S2a to S2c.
  • the second process S2 may include steps S21 to S2c.
  • Step S21 is a process for depositing a first transparent film 11 above the multiple protective layers 2. At least one first transparent electrode layer 4 included in the multiple transparent electrode portions 3 is formed by photolithography in step S22, etching in step S23, and peeling and cleaning in step S24. In steps S22 to S24, the portion of the first transparent film 11 located above the first protective layer 7 and the portion located above the second protective layer 8 are removed. A first etchant is used in the etching in step S23.
  • One example of the material for the first etchant is oxalic acid.
  • the etching rate of the first protective layer 7 with the first etchant and the etching rate of the second protective layer 8 with the first etchant may each be lower than the etching rate of the first transparent film 11 with the first etchant. This reduces the risk that the first protective layer 7 and the second protective layer 8 will be removed by the etching in step S23. This therefore improves the protection performance of the surface of the reflective electrode 1 located below the first protective layer 7, and also improves the protection performance of the surface of the reflective electrode 1 located below the second protective layer 8.
  • Step S25 is a process for depositing a second transparent film 12 above at least one first transparent electrode layer 4, first protective layer 7, and second protective layer 8. At least two second transparent electrode layers 5 included in multiple transparent electrode portions 3 are formed by photolithography in step S26, etching in step S27, and peeling and cleaning in step S28. In steps S26 to S28, the portion of the second transparent film 12 located above the second protective layer 8 is removed. A second etchant is used in the etching in step S27.
  • a material for the second etchant is oxalic acid.
  • the etching rate of the second protective layer 8 with the second etchant may be lower than the etching rate of the second transparent film 12 with the second etchant. This reduces the risk of the second protective layer 8 being removed by the etching in step S27, thereby improving the protection performance of the surface of the reflective electrode 1 located below the second protective layer 8.
  • Step S29 is a process of depositing a third transparent film 13 above at least two second transparent electrode layers 5 and the second protective layer 8. At least three third transparent electrode layers 6 included in multiple transparent electrode portions 3 are formed by etching through photolithography in step S2a, etching in step S2b, and peeling and cleaning in step S2c.
  • the material of the multiple transparent electrode portions 3 may be an indium oxide-based amorphous material, and the material of the multiple protective layers 2 may be an indium oxide-based polycrystalline material.
  • the first transparent film 11, the second transparent film 12, and the third transparent film 13 may each be an indium oxide-based amorphous material.
  • indium oxide-based materials include ITO, IZO, and InGaZnO-based oxide semiconductors.
  • ITO is an abbreviation for Indium Tin Oxide.
  • IZO is an abbreviation for Indium Zinc Oxide. This makes it easy to set the etching rate of the multiple protective layers 2 lower than the etching rate of the first transparent film 11 and lower than the etching rate of the second transparent film 12, thereby reducing the risk of the multiple protective layers 2 being removed by etching.
  • the first subpixel 54 which has the thickest transparent electrode portion 3 emits red light
  • the second subpixel 55 which has the next thickest transparent electrode portion 3 after the first subpixel 54, emits green light
  • the third subpixel 56 which has the thinnest transparent electrode portion 3, emits blue light.
  • This example shows that the following configuration is also possible.
  • the second step S2 for each of the multiple transparent electrode portions 3, the longer the emission wavelength corresponding to that transparent electrode portion 3, the thicker the transparent electrode portion 3 is formed.
  • the display device 101 the longer the emission wavelength corresponding to that transparent electrode portion 3, the thicker the transparent electrode portion 3 is.
  • each transparent electrode portion 3 has a different thickness (optical path length) corresponding to the emission color; in other words, a display device 101 that is compatible with a microcavity type display device.
  • the display device 101 is formed from at least a reflective electrode 1 formed on a TFT substrate 51 in the BP (backplane) process, and a structure in which a light-emitting functional layer 52 and an opposing electrode 53 are stacked in this order above that in the FP (frontplane) process.
  • the light-emitting layer of the light-emitting functional layer 52 is a layer that has the function of recombining holes supplied from the anode side with electrons supplied from the cathode side, thereby emitting light. To ensure this reaction occurs efficiently, in addition to the light-emitting layer, several layers that perform the roles of carrier transport and carrier injection are usually stacked above and below it during the FP process.
  • a structure utilizing the microcavity effect is used to efficiently extract light emitted from the light-emitting layer of the light-emitting functional layer 52 and to enhance color purity.
  • This structure optimizes the optical path length between the reflective electrode 1 and the counter electrode 53 according to the emission wavelength.
  • the optical path length between the reflective electrode 1 and the counter electrode 53 can be controlled by the number of layers between the reflective electrode 1 and the counter electrode 53 and the thickness of each layer. For example, when adjusting during the FP process, the thickness of the hole transport layer can be varied for each emitted color.
  • the transparent electrode section 3 is formed on the reflective electrode 1, and the number of transparent electrode layers constituting the transparent electrode section 3 and the thickness of each transparent electrode layer can be varied for each emitted color.
  • the microcavity effect is caused by multiple reflections between the reflective electrode 1 and the counter electrode 53.
  • the reflectivity of the reflective electrode 1 also affects its efficiency. For this reason, adjustment methods during the BP process, which involve processing on the reflective electrode 1, can be problematic due to reduced reflectivity caused by deterioration due to exposure of the reflective electrode 1.
  • This embodiment can be interpreted as proposing a structure in which a protective layer 2 is provided between a reflective electrode 1 and a transparent electrode portion 3 for adjusting the optical path length, as an improvement to the microcavity effect in the BP process.
  • the display device 101 has multiple subpixels in which a reflective electrode 1, a protective layer 2, a transparent electrode portion 3, a light-emitting functional layer 52, and a counter electrode 53 are stacked in this order, and each of the multiple subpixels is designed to have an optical path length corresponding to the emitted color.
  • the protective layer 2 is not formed on the reflective electrode 1 of the third subpixel 56, it will be exposed twice to oxalic acid, etc. during etching. However, if the protective layer 2 is formed, the surface of the reflective electrode 1 is protected, reducing the risk of unintended changes in the reflectivity of the reflective electrode 1.
  • the thickness of the protective film 10 formed in step S12 may be 5 nm or more and 20 nm or less.
  • steps S13 to S15 the photoresist for forming the multiple reflective electrodes 1 and the photoresist for forming the multiple protective layers 2 may be shared.
  • the material of the multiple protective layers 2 may be an indium oxide-based amorphous material. This makes it easier to perform steps before S15.
  • the thickness of the first transparent electrode layer 4, the thickness of the second transparent electrode layer 5, and the thickness of the third transparent electrode layer 6 can each be adjusted according to the emission wavelength corresponding to the transparent electrode portion 3.
  • the thickness of the first transparent electrode layer 4 may be 60 nm
  • the thickness of the second transparent electrode layer 5 may be 30 nm
  • the thickness of the third transparent electrode layer 6 may be 60 nm.
  • the thickness of the transparent electrode portion 3 is 150 nm in the first sub-pixel 54, 90 nm in the second sub-pixel 55, and 60 nm in the third sub-pixel 56.
  • FIG. 13 is a cross-sectional view showing a schematic configuration of a plurality of reflective electrodes 1, a plurality of protective layers 2, and a plurality of transparent electrode portions 3 according to the second embodiment of the present disclosure.
  • the width W14 of the target transparent electrode portion 14, which is one of the multiple transparent electrode portions 3, may be formed to be smaller than the width W15 of the target reflective electrode 15 of the multiple reflective electrodes 1 that corresponds to the target transparent electrode portion 14.
  • the width W14 may be formed to be smaller than the width W16 of the target protective layer 16 of the multiple protective layers 2 that corresponds to the target transparent electrode portion 14.
  • the width W14 of the target transparent electrode portion 14, which is one of the multiple transparent electrode portions 3, may be smaller than the width W15 of the target reflective electrode 15 of the multiple reflective electrodes 1 that corresponds to the target transparent electrode portion 14.
  • the width W14 may be smaller than the width W16 of the target protective layer 16 of the multiple protective layers 2 that corresponds to the target transparent electrode portion 14.
  • Each of these allows the edges of the target protective layer 16 to be covered by the bank 58, thereby improving the coverage of the bank 58.
  • FIG. 14 is a cross-sectional view showing a schematic configuration of a plurality of reflective electrodes 1, a plurality of protective layers 2, and a plurality of transparent electrode portions 3 according to the third embodiment of the present disclosure.
  • the width W14 of the target transparent electrode portion 14, which is one of the multiple transparent electrode portions 3, may be formed to be larger than the width W15 of the target reflective electrode 15 of the multiple reflective electrodes 1 that corresponds to the target transparent electrode portion 14.
  • the width W14 may be formed to be larger than the width W16 of the target protective layer 16 of the multiple protective layers 2 that corresponds to the target transparent electrode portion 14.
  • the target transparent electrode portion 14 may cover the side surface of the target reflective electrode 15 and the side surface of the target protective layer 16.
  • the width W14 of the target transparent electrode portion 14, which is one of the multiple transparent electrode portions 3, may be larger than the width W15 of the target reflective electrode 15, among the multiple reflective electrodes 1, that corresponds to the target transparent electrode portion 14.
  • the width W14 may be larger than the width W16 of the target protective layer 16, among the multiple protective layers 2, that corresponds to the target transparent electrode portion 14.
  • the side surface of the target reflective electrode 15 and the side surface of the target protective layer 16 may be covered by the target transparent electrode portion 14.
  • the target transparent electrode portion 14 can protect the target reflective electrode 15 and target protective layer 16, reducing damage to the target reflective electrode 15 and target protective layer 16 caused by stagnation before the formation of the bank 58, etc.
  • the distance between two adjacent subpixels can be determined by the transparent electrode portion 3 rather than the reflective electrode 1, which has a large side shift during wet etching, which is advantageous for achieving high definition.
  • FIG. 15 is a flowchart showing main steps in a manufacturing method of a display device 101 according to the fourth embodiment of the present disclosure.
  • the temperature of the material of the protective film 10 during deposition may be set to 150°C or higher. This makes it possible to omit the annealing treatment in step S16.
  • the "high temperature condition" in step S12 indicates that the temperature of the material of the protective film 10 during deposition is a high temperature of 150°C or higher.
  • the manufacturing method for the display device 101 according to embodiment 4 of the present disclosure uses a film obtained by crystal growth, which allows the protective layer 2 to be formed thin, which is advantageous for reducing costs and achieving a tapered shape.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Selon l'invention, un procédé de production d'un dispositif d'affichage de type à microcavité (101) comprend : une première étape (S1) consistant à former une pluralité d'électrodes réfléchissantes (1) et une pluralité de couches de protection (2) sur la pluralité d'électrodes réfléchissantes (1), respectivement ; et une seconde étape (S2) consistant à former une pluralité de parties d'électrode transparentes (3) ayant des épaisseurs différentes. Dans la seconde étape (S2), la pluralité de parties d'électrode transparentes (3) sont respectivement formées au-dessus de la pluralité de couches de protection (2).
PCT/JP2024/020291 2024-06-04 2024-06-04 Procédé de production de dispositif d'affichage et dispositif d'affichage Pending WO2025253473A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/020291 WO2025253473A1 (fr) 2024-06-04 2024-06-04 Procédé de production de dispositif d'affichage et dispositif d'affichage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/020291 WO2025253473A1 (fr) 2024-06-04 2024-06-04 Procédé de production de dispositif d'affichage et dispositif d'affichage

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011792A (ja) * 2003-03-26 2005-01-13 Sony Corp 発光素子およびその製造方法、ならびに表示装置
JP2005011793A (ja) * 2003-05-29 2005-01-13 Sony Corp 積層構造の製造方法および積層構造、表示素子ならびに表示装置
JP2005093401A (ja) * 2003-09-19 2005-04-07 Sony Corp 有機発光装置およびその製造方法、ならびに表示装置
JP2005197011A (ja) * 2003-12-26 2005-07-21 Sanyo Electric Co Ltd 表示装置及びその製造方法
JP2005197010A (ja) * 2003-12-26 2005-07-21 Sanyo Electric Co Ltd 表示装置の製造方法
WO2013047331A1 (fr) * 2011-09-26 2013-04-04 シャープ株式会社 Procédé de fabrication d'un dispositif d'affichage
WO2013047457A1 (fr) * 2011-09-30 2013-04-04 シャープ株式会社 Procédé de fabrication de dispositif d'affichage et dispositif d'affichage

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011792A (ja) * 2003-03-26 2005-01-13 Sony Corp 発光素子およびその製造方法、ならびに表示装置
JP2005011793A (ja) * 2003-05-29 2005-01-13 Sony Corp 積層構造の製造方法および積層構造、表示素子ならびに表示装置
JP2005093401A (ja) * 2003-09-19 2005-04-07 Sony Corp 有機発光装置およびその製造方法、ならびに表示装置
JP2005197011A (ja) * 2003-12-26 2005-07-21 Sanyo Electric Co Ltd 表示装置及びその製造方法
JP2005197010A (ja) * 2003-12-26 2005-07-21 Sanyo Electric Co Ltd 表示装置の製造方法
WO2013047331A1 (fr) * 2011-09-26 2013-04-04 シャープ株式会社 Procédé de fabrication d'un dispositif d'affichage
WO2013047457A1 (fr) * 2011-09-30 2013-04-04 シャープ株式会社 Procédé de fabrication de dispositif d'affichage et dispositif d'affichage

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