WO2026009355A1 - Tranche monocristalline et son procédé de production - Google Patents

Tranche monocristalline et son procédé de production

Info

Publication number
WO2026009355A1
WO2026009355A1 PCT/JP2024/024140 JP2024024140W WO2026009355A1 WO 2026009355 A1 WO2026009355 A1 WO 2026009355A1 JP 2024024140 W JP2024024140 W JP 2024024140W WO 2026009355 A1 WO2026009355 A1 WO 2026009355A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
crystal wafer
recess
shaping
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/024140
Other languages
English (en)
Japanese (ja)
Inventor
史郎 櫻木
五大 櫻木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UNION MATERIALS Inc
Original Assignee
UNION MATERIALS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UNION MATERIALS Inc filed Critical UNION MATERIALS Inc
Priority to PCT/JP2024/024140 priority Critical patent/WO2026009355A1/fr
Publication of WO2026009355A1 publication Critical patent/WO2026009355A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • wafer generally refers to a thin plate-like object cut from a single crystal ingot of semiconductor, such as a semiconductor single crystal cut into a thin plate (Kojien) or a semiconductor crystal processed into a plate-like object several hundred microns thick (Physical and Chemical Encyclopedia).
  • the "wafer” in this disclosure does not have to be cut from a single crystal ingot, as long as it is a thin plate-like object with a thickness of 1 mm or less, and the material is not limited to semiconductors.
  • Single-crystal wafers of silicon, gallium arsenide, germanium, and other materials are typically produced by producing single-crystal ingots using the CZ method or other methods from ultra-high-quality raw materials, and then slicing the ingots into thin sheets using a multi-wire saw or other tool. Because the width of a single wire saw is roughly the same as the thickness of a single-crystal wafer, approximately half of the single-crystal ingot becomes kerf loss. Furthermore, because single-crystal ingots are often made with additives or as alloys, their leading and trailing ends contain additives and exhibit segregation of their composition, making them difficult to reuse. As a result, approximately 70% of the total ingot volume must be discarded.
  • the leading and trailing ends are cut off from single-crystal ingots to create cylindrical single crystals, which are then shaped by cutting and removing all four edges, resulting in loss of the four edges.
  • these manufacturing processes require significant amounts of time, electricity, and other energy, resulting in significant losses.
  • conventional single-crystal wafer manufacturing methods inevitably result in significant losses of ultra-high-quality raw materials, time, and energy.
  • post-processing is required, such as cleaning the sludge and removing distortions and undulations that occur during cutting.
  • Patent Document 1 he proposed a method for producing high-quality silicon crystal ribbons (wafers) using a shaping container and shaping tool (also called a mold) made of carbon or quartz glass.
  • This manufacturing method comprises (a) heating raw crystal material to form a melt in a shaping vessel set to a predetermined atmosphere, (b) placing the melt in a shaping jig placed in the shaping vessel, and (c) cooling the melt from one end of the shaping jig to crystallize it (Claim 1).
  • Proposal 1 was merely an idea, and it was not possible to actually manufacture single-crystal silicon wafers. The reason for this is thought to be that when the seed crystal was placed horizontally, convection in the melt made it impossible to maintain a linear solid-liquid interface between the melt and the seed crystal. In other words, Proposal 1 was structurally difficult to implement because of the horizontal placement of the seed crystal. Furthermore, the plate-shaped seed crystal used in Proposal 1 was obtained by cutting it into thin plates, just like conventional single-crystal wafers, which resulted in loss and increased costs.
  • This disclosure has been made in light of the above-mentioned circumstances, and aims to provide a single crystal wafer and a manufacturing method thereof that can eliminate the enormous loss of ultra-high quality raw materials, time, energy, etc., and post-processing, increase the utilization rate of ultra-high quality raw materials, and significantly reduce costs.
  • One aspect of the present disclosure is a thin plate-like body having a first main surface, a second main surface, and a side surface connecting the first main surface and the second main surface;
  • the thickness of the thin plate-like body is 1 mm or less.
  • the present invention relates to a single crystal wafer, wherein at least a portion of the first main surface, the second main surface, and the side surface has a transferred surface from a shaping jig.
  • the single crystal wafers of one embodiment of the present disclosure are manufactured directly without using ingots, eliminating the need for post-processing and the enormous loss of ultra-high quality raw materials, time, and energy, thereby increasing the utilization rate of ultra-high quality raw materials and significantly reducing costs.
  • At least a portion of the first main surface has a transferred surface from the shaping jig; the first main surface is a transferred surface from the shaping jig; the first main surface and the second main surface are transferred surfaces from the shaping jig; At least a portion of the transfer surface has a textured structure, or
  • the thin plate-like body is preferably rectangular or square.
  • the single crystal wafer is preferably made of an inorganic material, a semiconductor, or germanium.
  • the shaping jig is composed of two or more plate-shaped trays, the plate-shaped tray has a recess on one surface
  • the single crystal wafer manufacturing method allows single crystal wafers to be manufactured directly without using ingots, eliminating the need for post-processing and the enormous loss of ultra-high quality raw materials, time, and energy, thereby increasing the utilization rate of ultra-high quality raw materials and significantly reducing costs.
  • the other surface of the plate-shaped tray and the bottom surface of the recess are flat,
  • the shape of the bottom surface is preferably rectangular or square.
  • the other surface of the plate-shaped tray and at least a part of the bottom surface of the recess have a textured structure.
  • the same substance is an inorganic substance, the inorganic substance is a semiconductor, or the semiconductor is germanium.
  • 1 shows a manufacturing apparatus used in the manufacturing method of this embodiment.
  • 10 shows the manufacturing equipment during the third process.
  • 1 shows a manufacturing apparatus used in the manufacturing method of this embodiment.
  • 10 shows the manufacturing equipment during the third process.
  • 1 shows a manufacturing apparatus used in the manufacturing method of this embodiment.
  • 10 shows the manufacturing equipment during the third process.
  • On the left is a germanium single crystal wafer, and on the right is a germanium polycrystalline wafer.
  • the single crystal wafer of this embodiment is a thin plate-like body having a first main surface, a second main surface, and a side surface connecting the first main surface and the second main surface, and the thickness of the thin plate-like body is 1 mm or less, and at least a portion of the first main surface, the second main surface, and the side surface have transferred surfaces from the shaping jig.
  • the first main surface has a transferred surface from the shaping jig, that the first main surface is made of the transferred surface from the shaping jig, that the first main surface and the second main surface are made of the transferred surfaces from the shaping jig, that at least a portion of the transferred surface has a textured structure, or that the thin plate-like body is rectangular or square.
  • the first main surface may also have a textured structure. This reduces the number of processes such as processing and cleaning, improves the utilization rate of raw materials, and further reduces costs.
  • the textured structure reduces reflection loss and improves the utilization rate of light.
  • the plane orientation of the first main surface may be (100), (110), (111), etc.
  • the single crystal wafer of this embodiment is not particularly limited to any particular material as long as it can be manufactured, but is preferably made of an inorganic material.
  • inorganic materials include semiconductors, oxides, metals, alloys, and halides.
  • semiconductors include germanium. This embodiment improves the utilization rate of expensive raw materials, further reducing costs.
  • the thickness of the thin plate-shaped single crystal wafer of this embodiment is preferably 0.5 mm or less, and more preferably 0.3 mm or less. This allows for an increase in the number of single crystal wafers that can be obtained per raw material. There is no particular lower limit to the thickness of the thin plate-shaped single crystal wafer as long as it can be manufactured, but from the perspective of strength, a thickness of 0.1 mm or more is preferred, and 0.2 mm or more is more preferred.
  • the method for manufacturing a single crystal wafer of this embodiment includes a first step (FIG. 1) of arranging a bulk seed crystal 12, a crystal raw material 13, and a shaping jig 14 in order from the bottom up in a shaping vessel 11; a second step of heating the shaping vessel 11, which has been set to a predetermined atmosphere and a predetermined temperature gradient, to turn the raw material 13 into a melt 15, leaving at least a portion of the seed crystal 12 unmelted as a solid, and bringing the melt 15 into contact with the seed crystal 12 that remains as a solid; a third step (FIG. 2) of placing the melt 15 in the shaping jig 14; and a fourth step of lowering the temperature of the shaping vessel 11 to convert the melt 15 into a single crystal.
  • the other single crystal wafer manufacturing methods of this embodiment also allow single crystal wafers to be manufactured directly without using ingots, eliminating the need for post-processing and the enormous loss of ultra-high quality raw materials, time, and energy, thereby increasing the utilization rate of ultra-high quality raw materials and significantly reducing costs.
  • the depth of the recess 19 may be any depth greater than 1 mm, such as 10 mm or 20 mm, and the shape of the bottom surface of the recess 19 may also be any desired shape. It is possible to easily manufacture multiple single crystal plates of any desired thickness, such as 10 mm or 20 mm, and any desired shape. For example, if the shape of the bottom surface of the recess 19 is a circular concave or circular convex surface, it is also possible to easily manufacture multiple convex or concave lenses.
  • first step bulk germanium seed crystals (6N purity) 12, germanium raw material (6N purity) 13, and a shaping jig 14 were placed in a graphite shaping container 11, in that order from the bottom.
  • first region 16 the region where the seed crystals 12 are placed
  • second region 17 the region where the raw material 13 and shaping jig 14 are placed
  • the shaping jig 14 is composed of two or more graphite plate-shaped trays 18.
  • the plate-shaped trays 18 have a recess 19 on one side and a first communication section 20 from the recess 19 to the first region 16.
  • the two or more plate-shaped trays 18 are stacked horizontally with one side facing the same direction, and are placed while maintaining communication between the recess 19 and the first region 16 via the first communication section 20.
  • the recess 19 is 0.5 mm deep, the bottom is a square measuring 100 mm x 100 mm, and the shaping jig 14 is configured to be movable vertically downward.
  • the shaping vessel 11 which is set to an argon or vacuum atmosphere and a predetermined temperature gradient, is heated to near the melting point (938°C) of the germanium raw material 13, turning the raw material 13 into a melt 15, leaving at least a portion of the seed crystal 12 unmelted and as a solid, and the melt 15 is brought into contact with the seed crystal 12, which remains as a solid.
  • the predetermined temperature gradient is set so that the temperature of the first region 16 is lower than the temperature of the second region 17.
  • the shaping jig 14 was moved vertically downward by an external force (downward arrow in Figure 1), and the melt 15 was accommodated in the recess 19 of the plate-like tray 18 that constitutes the shaping jig 14 via the first communication part 20 ( Figure 2).
  • the temperature of the shaping vessel 11 was lowered while maintaining a predetermined temperature gradient, and crystal growth was carried out from the seed crystal 12 side of the melt 15, resulting in a germanium single crystal wafer measuring 100 mm x 100 mm x 0.5 mm thick.
  • the left side of Figure 7 shows a germanium single crystal wafer, and the right side shows a germanium polycrystalline wafer produced without a seed crystal.
  • the wafer on the left has a uniform reflection pattern on the surface and a uniform plane orientation, meaning it is a single crystal.
  • the wafer on the right has regions with different reflection patterns, and each region is a single crystal, indicating that it is an aggregate of single crystals with different plane orientations.
  • Shaping vessel 12. Seed crystal, 13. Crystal raw material, 14. Shaping jig, 15. Melt, 16. First region, 17. Second region, 18. Plate-shaped tray, 19. Recess, 20. First communication portion, 21. Second communication portion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne une tranche monocristalline qui est un corps sous forme de plaque mince ayant : une première surface principale ; une seconde surface principale ; et des surfaces latérales reliant la première surface principale et la seconde surface principale. L'épaisseur du corps sous forme de plaque mince n'est pas supérieure à 1 mm, et au moins une partie de la première surface principale, de la seconde surface principale et des surfaces latérales a une surface de transfert dérivée d'un outil de mise en forme.
PCT/JP2024/024140 2024-07-03 2024-07-03 Tranche monocristalline et son procédé de production Pending WO2026009355A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/024140 WO2026009355A1 (fr) 2024-07-03 2024-07-03 Tranche monocristalline et son procédé de production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/024140 WO2026009355A1 (fr) 2024-07-03 2024-07-03 Tranche monocristalline et son procédé de production

Publications (1)

Publication Number Publication Date
WO2026009355A1 true WO2026009355A1 (fr) 2026-01-08

Family

ID=98317860

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2024/024140 Pending WO2026009355A1 (fr) 2024-07-03 2024-07-03 Tranche monocristalline et son procédé de production

Country Status (1)

Country Link
WO (1) WO2026009355A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04292494A (ja) * 1991-03-19 1992-10-16 Union Material Kk 整形結晶の製造方法及び製造装置
JPH08228027A (ja) * 1994-12-22 1996-09-03 Union Material Kk 熱電半導体素子及びその製造方法
JPH10290030A (ja) * 1997-04-14 1998-10-27 Orion Mach Co Ltd 半導体素子の製造方法、製造装置および熱電変換モジュールの製造方法
JP2009013055A (ja) * 2007-06-29 2009-01-22 Commissariat A L'energie Atomique モールディングおよび方向性結晶化によって半導体物質のウェハを製造する方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04292494A (ja) * 1991-03-19 1992-10-16 Union Material Kk 整形結晶の製造方法及び製造装置
JPH08228027A (ja) * 1994-12-22 1996-09-03 Union Material Kk 熱電半導体素子及びその製造方法
JPH10290030A (ja) * 1997-04-14 1998-10-27 Orion Mach Co Ltd 半導体素子の製造方法、製造装置および熱電変換モジュールの製造方法
JP2009013055A (ja) * 2007-06-29 2009-01-22 Commissariat A L'energie Atomique モールディングおよび方向性結晶化によって半導体物質のウェハを製造する方法

Similar Documents

Publication Publication Date Title
CN102362016B (zh) 晶种层和晶种层的制造方法
EP0795630B1 (fr) Procede pour fabriquer des cristaux formes par une injection de liquide avec pression verticale
CN104736746B (zh) 改进的晶体硅的制造
CN103088406B (zh) 一种籽晶的制备方法及类单晶硅锭的铸造方法
CS199607B2 (en) Semiconductor table silikon crystals for solar cells and method their manufacture
JP2003128411A (ja) 板状シリコン、板状シリコンの製造方法および太陽電池
CN113423876B (zh) 砷化镓单晶基板
KR20100038306A (ko) 박막 캡슐 내의 반도체 웨이퍼들의 재결정화 및 관련 공정
CN105229208A (zh) β-Ga2O3系单晶的培育方法以及β-Ga2O3系单晶基板及其制造方法
US20130192516A1 (en) Method of preparing cast silicon by directional solidification
CN104246022A (zh) 制造单晶硅
JP2008156166A (ja) シリコンインゴットの鋳造方法および切断方法
CN104769166A (zh) 从坩埚中的种晶生长硅铸锭的系统和方法及其中所使用的种晶的制造
US20130193559A1 (en) CAST SILICON ingot prepared BY DIRECTIONAL SOLIDIFICATION
JP4060106B2 (ja) 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材
TWI580825B (zh) 藉由定向固化作用製備鑄態矽之方法
JP7394332B2 (ja) 鉄ガリウム合金の単結晶インゴットの育成方法およびその加工方法、鉄ガリウム合金の単結晶インゴット
JP2024121659A (ja) 単結晶ウエハー及びその製造方法
WO2013095928A1 (fr) Procédé de fabrication de briques à partir d'un lingot de silicium
EP1650330A1 (fr) Procede de production de plaquette de silicium et plaquette de silicium
JP3993814B2 (ja) 多結晶シリコンインゴットの切断方法
JP2012171821A (ja) 多結晶ウェーハ及びその製造方法、並びに多結晶材料の鋳造方法
CN108531985B (zh) 一种多晶硅半熔铸锭工艺
JP2022045089A (ja) 鉄ガリウム合金の単結晶インゴットの加工方法
JPH04132677A (ja) 融液加圧法による薄板状単結晶の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24946343

Country of ref document: EP

Kind code of ref document: A1