ZA718405B - Three dimensional charge coupled devices - Google Patents

Three dimensional charge coupled devices

Info

Publication number
ZA718405B
ZA718405B ZA718405A ZA718405A ZA718405B ZA 718405 B ZA718405 B ZA 718405B ZA 718405 A ZA718405 A ZA 718405A ZA 718405 A ZA718405 A ZA 718405A ZA 718405 B ZA718405 B ZA 718405B
Authority
ZA
South Africa
Prior art keywords
charge coupled
coupled devices
dimensional charge
dimensional
devices
Prior art date
Application number
ZA718405A
Other languages
English (en)
Inventor
W Boyle
G Smith
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of ZA718405B publication Critical patent/ZA718405B/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/386—Substrate regions of field-effect devices of charge-coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrostatic Separation (AREA)
  • Meter Arrangements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
ZA718405A 1970-12-16 1971-12-15 Three dimensional charge coupled devices ZA718405B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9861970A 1970-12-16 1970-12-16

Publications (1)

Publication Number Publication Date
ZA718405B true ZA718405B (en) 1972-09-27

Family

ID=22270151

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA718405A ZA718405B (en) 1970-12-16 1971-12-15 Three dimensional charge coupled devices

Country Status (15)

Country Link
US (1) US3796927A (fr)
JP (1) JPS5316674B1 (fr)
AU (1) AU464940B2 (fr)
BE (1) BE776637A (fr)
CA (1) CA946076A (fr)
CH (1) CH539916A (fr)
DE (1) DE2162140A1 (fr)
ES (1) ES398327A1 (fr)
FR (1) FR2118110B1 (fr)
GB (1) GB1358890A (fr)
IE (1) IE35887B1 (fr)
IT (1) IT945397B (fr)
NL (1) NL7117115A (fr)
SE (1) SE381356B (fr)
ZA (1) ZA718405B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
US4047216A (en) * 1974-04-03 1977-09-06 Rockwell International Corporation High speed low capacitance charge coupled device in silicon-sapphire
DE2527657C3 (de) * 1975-06-20 1979-08-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Optoelektronischer Sensor und Verfahren zu seinem Betrieb
CA1101993A (fr) * 1976-04-15 1981-05-26 Kunihiro Tanikawa Traduction non-disponible
US4613895A (en) * 1977-03-24 1986-09-23 Eastman Kodak Company Color responsive imaging device employing wavelength dependent semiconductor optical absorption
JPH0160951B2 (fr) * 1978-01-03 1989-12-26 Advanced Micro Devices Inc
US4227201A (en) * 1979-01-22 1980-10-07 Hughes Aircraft Company CCD Readout structure for display applications
EP0025658A3 (fr) * 1979-09-18 1983-04-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Dispositifs de stockage et de transfert de charges et leur procédé de fabrication
US4450464A (en) * 1980-07-23 1984-05-22 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus having a charge transfer arrangement
US4426629A (en) 1981-12-24 1984-01-17 Hughes Aircraft Company Two-dimensional kernel generator for transversal filters
US4716447A (en) * 1985-09-20 1987-12-29 Rca Corporation Interrupting charge integration in semiconductor imagers exposed to radiant energy
US5608264A (en) * 1995-06-05 1997-03-04 Harris Corporation Surface mountable integrated circuit with conductive vias
US5814889A (en) * 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US5668409A (en) * 1995-06-05 1997-09-16 Harris Corporation Integrated circuit with edge connections and method
US5618752A (en) * 1995-06-05 1997-04-08 Harris Corporation Method of fabrication of surface mountable integrated circuits
US5646067A (en) * 1995-06-05 1997-07-08 Harris Corporation Method of bonding wafers having vias including conductive material
US5682062A (en) * 1995-06-05 1997-10-28 Harris Corporation System for interconnecting stacked integrated circuits

Also Published As

Publication number Publication date
JPS5316674B1 (fr) 1978-06-02
FR2118110B1 (fr) 1974-08-23
IE35887L (en) 1972-06-16
IE35887B1 (en) 1976-06-23
FR2118110A1 (fr) 1972-07-28
SE381356B (sv) 1975-12-01
IT945397B (it) 1973-05-10
US3796927A (en) 1974-03-12
BE776637A (fr) 1972-04-04
AU3673871A (en) 1973-06-14
CA946076A (en) 1974-04-23
CH539916A (de) 1973-07-31
ES398327A1 (es) 1975-04-16
GB1358890A (en) 1974-07-03
NL7117115A (fr) 1972-06-20
DE2162140A1 (de) 1972-07-06
AU464940B2 (en) 1975-09-11

Similar Documents

Publication Publication Date Title
CA956729A (en) Charge coupled memory devices
ZA714813B (en) Fibro-filamentary structure
HK42177A (en) Azapurinones
IL36363A (en) 5-azapyrimidine-nucleosides
AU464940B2 (en) Three dimensional charge coupled devices
HK13477A (en) Arylalkylsulphoxides
IL36191A0 (en) Disc-brakes
IL42476A0 (en) Charge coupled devices
IL37883A0 (en) Alpha-6-deoxytetracyclines
IE35684L (en) Charge transfer devices
KR780000481B1 (en) Charge coupled device
YU65471A (en) Vazdusna kocnica indirektnog
IE36249L (en) Charge coupled devices
ZA71762B (en) Antibiotics
IE35693L (en) 1 - phenoxy - 2 - hydroxy - 3 - hydroxyalkyl-aminopropanes
JPS5267279A (en) Charge coupled device
IL36747A0 (en) 3-sulfonamido-4-hydroxyphenyl-2-piperidylcarbinols
IL36155A (en) 3-amino-1-phenoxy-propan-2-olderivatives
HK86379A (en) 3-fluoroalanines
ZA715676B (en) N-thienylalkyl-beta-alkoxy-trifluoro-methylphenalkylamines
GB1364569A (en) Cinecamera
IL36630A (en) 2-naphthyl-quinazolinones
AU4883172A (en) Stick-classifying
IL38179A (en) Counting devices
IL37003A0 (en) 6-deoxy-5-oxytetracycline-esters