ZA862256B - Vertical apparatus for continuous deposition of semiconductor alloys - Google Patents

Vertical apparatus for continuous deposition of semiconductor alloys

Info

Publication number
ZA862256B
ZA862256B ZA862256A ZA862256A ZA862256B ZA 862256 B ZA862256 B ZA 862256B ZA 862256 A ZA862256 A ZA 862256A ZA 862256 A ZA862256 A ZA 862256A ZA 862256 B ZA862256 B ZA 862256B
Authority
ZA
South Africa
Prior art keywords
continuous deposition
semiconductor alloys
vertical apparatus
vertical
alloys
Prior art date
Application number
ZA862256A
Other languages
English (en)
Inventor
Herbert Ovshinsky
Original Assignee
Sovonics Solar Systems
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sovonics Solar Systems filed Critical Sovonics Solar Systems
Publication of ZA862256B publication Critical patent/ZA862256B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
ZA862256A 1985-04-01 1986-03-26 Vertical apparatus for continuous deposition of semiconductor alloys ZA862256B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/718,571 US4601260A (en) 1985-04-01 1985-04-01 Vertical semiconductor processor

Publications (1)

Publication Number Publication Date
ZA862256B true ZA862256B (en) 1986-11-26

Family

ID=24886579

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA862256A ZA862256B (en) 1985-04-01 1986-03-26 Vertical apparatus for continuous deposition of semiconductor alloys

Country Status (9)

Country Link
US (1) US4601260A (fr)
EP (1) EP0200332A2 (fr)
JP (1) JPH0738378B2 (fr)
AU (1) AU5553386A (fr)
BR (1) BR8601420A (fr)
CA (1) CA1242816A (fr)
ES (1) ES8708093A1 (fr)
IN (1) IN167003B (fr)
ZA (1) ZA862256B (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2590808B1 (fr) * 1985-12-04 1989-09-15 Canon Kk Dispositif de soufflage de particules fines
US4723507A (en) * 1986-01-16 1988-02-09 Energy Conversion Devices, Inc. Isolation passageway including annular region
US4829189A (en) * 1986-07-18 1989-05-09 Sando Iron Works Co., Ltd. Apparatus for low-temperature plasma treatment of sheet material
KR910003742B1 (ko) 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
JPH02148715A (ja) * 1988-11-29 1990-06-07 Canon Inc 半導体デバイスの連続形成装置
US5105762A (en) * 1988-12-20 1992-04-21 Texas Instruments Incorporated Support and seal structure for CCVD reactor
JP3101330B2 (ja) * 1991-01-23 2000-10-23 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
US6720576B1 (en) * 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
DE69331291T2 (de) * 1992-11-13 2002-08-08 Energy Conversion Devices, Inc. Verfahren zur Herstellung einer Sperrbeschichtung mittels plasmaunterstütztem CVD
FR2786208B1 (fr) * 1998-11-25 2001-02-09 Centre Nat Rech Scient Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
US6225611B1 (en) 1999-11-15 2001-05-01 Hull Corporation Microwave lyophilizer having corona discharge control
EP1209252A3 (fr) * 2000-09-15 2002-11-27 Shipley Co. L.L.C. Dispositif pour le revêtement en continu
JP4003163B2 (ja) * 2002-01-15 2007-11-07 富士フイルム株式会社 多層塗布膜の製造装置
US20060278163A1 (en) * 2002-08-27 2006-12-14 Ovshinsky Stanford R High throughput deposition apparatus with magnetic support
US20090068344A1 (en) * 2007-07-31 2009-03-12 Vincent Cannella System and method for manufacturing thin film electrical devices
EP2123793A1 (fr) 2008-05-20 2009-11-25 Helianthos B.V. Procédé de dépôt de vapeur
CN102021576B (zh) * 2010-09-30 2012-06-27 深圳市信诺泰创业投资企业(普通合伙) 一种连续生产挠性覆铜板的方法
CN102820374A (zh) * 2012-07-24 2012-12-12 海宁博大科技有限公司 一种太阳能电池组背膜的生产设备
DE102013219816B4 (de) * 2013-09-30 2023-06-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung mit Abscheidekammer mit turbulenter Gasführung zur kontinuierlichen Beschichtung von Substraten mittels Gasphasenabscheidung sowie Verfahren zu diesem Zweck unter Verwendung einer solchen Vorrichtung
TWI757299B (zh) * 2016-06-02 2022-03-11 美商應用材料股份有限公司 用於沉積材料在連續基板上的方法及設備

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4519339A (en) * 1981-03-16 1985-05-28 Sovonics Solar Systems Continuous amorphous solar cell production system
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly

Also Published As

Publication number Publication date
IN167003B (fr) 1990-08-18
US4601260A (en) 1986-07-22
AU5553386A (en) 1986-10-09
EP0200332A2 (fr) 1986-11-05
JPS61263120A (ja) 1986-11-21
JPH0738378B2 (ja) 1995-04-26
CA1242816A (fr) 1988-10-04
ES8708093A1 (es) 1987-09-01
ES553530A0 (es) 1987-09-01
BR8601420A (pt) 1986-12-09

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