ZA873465B - Deep trench etching of single crystal silicon - Google Patents
Deep trench etching of single crystal siliconInfo
- Publication number
- ZA873465B ZA873465B ZA873465A ZA873465A ZA873465B ZA 873465 B ZA873465 B ZA 873465B ZA 873465 A ZA873465 A ZA 873465A ZA 873465 A ZA873465 A ZA 873465A ZA 873465 B ZA873465 B ZA 873465B
- Authority
- ZA
- South Africa
- Prior art keywords
- single crystal
- crystal silicon
- deep trench
- trench etching
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86417786A | 1986-05-16 | 1986-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ZA873465B true ZA873465B (en) | 1989-01-25 |
Family
ID=25342688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ZA873465A ZA873465B (en) | 1986-05-16 | 1987-05-14 | Deep trench etching of single crystal silicon |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0246514A3 (fr) |
| JP (1) | JPS6333586A (fr) |
| KR (1) | KR900003804B1 (fr) |
| BR (1) | BR8702442A (fr) |
| ZA (1) | ZA873465B (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0272143B1 (fr) * | 1986-12-19 | 1999-03-17 | Applied Materials, Inc. | Procédé de décapage par bromine pour silicium |
| JP3371143B2 (ja) * | 1991-06-03 | 2003-01-27 | ソニー株式会社 | ドライエッチング方法 |
| DE4317623C2 (de) * | 1993-05-27 | 2003-08-21 | Bosch Gmbh Robert | Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung |
| ATE251341T1 (de) * | 1996-08-01 | 2003-10-15 | Surface Technology Systems Plc | Verfahren zur ätzung von substraten |
| GB9616225D0 (en) | 1996-08-01 | 1996-09-11 | Surface Tech Sys Ltd | Method of surface treatment of semiconductor substrates |
| US6187685B1 (en) | 1997-08-01 | 2001-02-13 | Surface Technology Systems Limited | Method and apparatus for etching a substrate |
| US6051346A (en) * | 1998-04-29 | 2000-04-18 | Lucent Technologies Inc. | Process for fabricating a lithographic mask |
| US6417013B1 (en) | 1999-01-29 | 2002-07-09 | Plasma-Therm, Inc. | Morphed processing of semiconductor devices |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| JP5064319B2 (ja) * | 2008-07-04 | 2012-10-31 | 東京エレクトロン株式会社 | プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体 |
| CN102324387A (zh) * | 2011-09-28 | 2012-01-18 | 上海宏力半导体制造有限公司 | 深沟槽的形成方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| US4475982A (en) * | 1983-12-12 | 1984-10-09 | International Business Machines Corporation | Deep trench etching process using CCl2 F2 /Ar and CCl2 F.sub. /O2 RIE |
| CA1260365A (fr) * | 1985-05-06 | 1989-09-26 | Lee Chen | Gravure anisotrope du silicium dans un plasma fluore |
-
1987
- 1987-05-08 EP EP87106711A patent/EP0246514A3/fr not_active Withdrawn
- 1987-05-13 BR BR8702442A patent/BR8702442A/pt unknown
- 1987-05-13 JP JP62116698A patent/JPS6333586A/ja active Granted
- 1987-05-14 ZA ZA873465A patent/ZA873465B/xx unknown
- 1987-05-16 KR KR1019870004854A patent/KR900003804B1/ko not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0246514A3 (fr) | 1989-09-20 |
| EP0246514A2 (fr) | 1987-11-25 |
| JPS6356312B2 (fr) | 1988-11-08 |
| JPS6333586A (ja) | 1988-02-13 |
| BR8702442A (pt) | 1988-02-23 |
| KR900003804B1 (ko) | 1990-05-31 |
| KR870011672A (ko) | 1987-12-26 |
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