AR019111A1 - Componente semiconductor, en particular una celda solar, que tiene al menos un material de base, semiconductor y metodo para producir dicho componente. - Google Patents
Componente semiconductor, en particular una celda solar, que tiene al menos un material de base, semiconductor y metodo para producir dicho componente.Info
- Publication number
- AR019111A1 AR019111A1 ARP990101934A ARP990101934A AR019111A1 AR 019111 A1 AR019111 A1 AR 019111A1 AR P990101934 A ARP990101934 A AR P990101934A AR P990101934 A ARP990101934 A AR P990101934A AR 019111 A1 AR019111 A1 AR 019111A1
- Authority
- AR
- Argentina
- Prior art keywords
- semiconductor
- component
- solar cell
- produce
- base
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 239000000463 material Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 abstract 4
- 229910052683 pyrite Inorganic materials 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 239000011028 pyrite Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052960 marcasite Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Se trata de un componente semiconductor (50), en particular una celda solar, la cual posee al menos un material de base semiconductor (40) que consiste enuna estructura mono o policristalina. El material de base semiconductor (40) consiste al menose n parte de pirita con la composicion química FeS2 y que selimpia con el proposito de lograr un grado de pureza definido. El máximo beneficio del material de base semiconductor (40) se logra cuando se produce al menosuna capa de pirita (51), almenos una capa de boro (52) y al menos una capa de fosforo (53). Un tipo optimo de este componente semiconductor se deriva cuandose utiliza como una celda solar. También se propone un método para fabricar dicho componente.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98810382A EP0954033A1 (de) | 1998-04-29 | 1998-04-29 | Halbleiterbauelement, insbesondere eine Solarzelle, mit einer Schicht aus Pyrit, sowie Verfahren zu dessen Herstellung |
| PCT/CH1998/000455 WO1999056325A1 (de) | 1998-04-29 | 1998-10-23 | Halbleiterbauelement, insbesondere eine solarzelle, sowie verfahren zu dessen herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AR019111A1 true AR019111A1 (es) | 2001-12-26 |
Family
ID=8236060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ARP990101934A AR019111A1 (es) | 1998-04-29 | 1999-04-27 | Componente semiconductor, en particular una celda solar, que tiene al menos un material de base, semiconductor y metodo para producir dicho componente. |
Country Status (26)
| Country | Link |
|---|---|
| US (1) | US6635942B2 (es) |
| EP (2) | EP0954033A1 (es) |
| JP (1) | JP3874429B2 (es) |
| KR (1) | KR100613524B1 (es) |
| CN (1) | CN1218405C (es) |
| AR (1) | AR019111A1 (es) |
| AT (1) | ATE287576T1 (es) |
| AU (1) | AU756671B2 (es) |
| BG (1) | BG64069B1 (es) |
| BR (1) | BR9808074B1 (es) |
| CA (1) | CA2275298C (es) |
| CZ (1) | CZ298589B6 (es) |
| DE (1) | DE59812504D1 (es) |
| DK (1) | DK1032949T3 (es) |
| ES (1) | ES2239406T3 (es) |
| HU (1) | HU227655B1 (es) |
| IL (1) | IL131534A (es) |
| MY (1) | MY124379A (es) |
| NO (1) | NO993552L (es) |
| NZ (1) | NZ336848A (es) |
| PL (1) | PL192742B1 (es) |
| PT (1) | PT1032949E (es) |
| RU (1) | RU2219620C2 (es) |
| TR (1) | TR199903266T1 (es) |
| TW (1) | TW434915B (es) |
| WO (1) | WO1999056325A1 (es) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300375C (zh) * | 2004-12-07 | 2007-02-14 | 浙江大学 | 电沉积氧化及热硫化合成二硫化铁薄膜的方法 |
| US8093684B2 (en) * | 2006-01-16 | 2012-01-10 | Sharp Kabushiki Kaisha | Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same |
| JP4938314B2 (ja) * | 2006-01-16 | 2012-05-23 | シャープ株式会社 | 光電変換装置および半導体接合素子の製造方法 |
| US20110240108A1 (en) | 2010-04-02 | 2011-10-06 | Matt Law | Method To Synthesize Colloidal Iron Pyrite (FeS2) Nanocrystals And Fabricate Iron Pyrite Thin Film Solar Cells |
| US10680125B2 (en) * | 2011-11-15 | 2020-06-09 | Nutech Ventures | Iron pyrite nanocrystals |
| JP5377732B2 (ja) * | 2012-09-14 | 2013-12-25 | シャープ株式会社 | 半導体、ｐ型半導体、半導体接合素子、ｐｎ接合素子、および光電変換装置 |
| WO2014209834A2 (en) * | 2013-06-24 | 2014-12-31 | Arizona Board Of Regents On Behalf Of Arizona State University | Method to produce pyrite |
| US9705012B2 (en) * | 2014-03-18 | 2017-07-11 | The United States Of America, As Represented By The Secretary Of The Navy | Method of passivating an iron disulfide surface via encapsulation in zinc sulfide |
| US10181598B2 (en) | 2015-01-05 | 2019-01-15 | University Of Florida Resarch Foundation, Inc. | Lithium ion battery cathodes, methods of making, and methods of use thereof |
| CN105140338B (zh) * | 2015-07-29 | 2017-07-04 | 云南师范大学 | 一种低成本FeS2薄膜太阳电池的制备方法 |
| EP3418717A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | A microfluidic apparatus for separation of particulates in a fluid |
| EP3418721A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | A microfluidic chip |
| EP3418719A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | System and method for improved identification of particles or cells |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852563A (en) * | 1974-02-01 | 1974-12-03 | Hewlett Packard Co | Thermal printing head |
| US4131486A (en) * | 1977-01-19 | 1978-12-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Back wall solar cell |
| US4710786A (en) * | 1978-03-16 | 1987-12-01 | Ovshinsky Stanford R | Wide band gap semiconductor alloy material |
| JPS59115574A (ja) * | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| US4589918A (en) * | 1984-03-28 | 1986-05-20 | National Research Institute For Metals | Thermal shock resistant thermoelectric material |
| DE3526910A1 (de) * | 1984-07-27 | 1986-02-13 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Photoaktive pyritschicht, verfahren zu deren herstellung und verwendung derartiger pyritschichten |
| CA1265922A (en) * | 1984-07-27 | 1990-02-20 | Helmut Tributsch | Photoactive pyrite layer and process for making and using same |
| US4766471A (en) * | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
| FR2694451B1 (fr) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Cellule photovoltaïque. |
| CA2110097C (en) * | 1992-11-30 | 2002-07-09 | Soichiro Kawakami | Secondary battery |
-
1998
- 1998-04-29 EP EP98810382A patent/EP0954033A1/de not_active Withdrawn
- 1998-10-23 EP EP98948658A patent/EP1032949B1/de not_active Expired - Lifetime
- 1998-10-23 PT PT98948658T patent/PT1032949E/pt unknown
- 1998-10-23 KR KR1019997006817A patent/KR100613524B1/ko not_active Expired - Fee Related
- 1998-10-23 WO PCT/CH1998/000455 patent/WO1999056325A1/de not_active Ceased
- 1998-10-23 DE DE59812504T patent/DE59812504D1/de not_active Expired - Lifetime
- 1998-10-23 ES ES98948658T patent/ES2239406T3/es not_active Expired - Lifetime
- 1998-10-23 CZ CZ0150499A patent/CZ298589B6/cs not_active IP Right Cessation
- 1998-10-23 CN CN988024780A patent/CN1218405C/zh not_active Expired - Fee Related
- 1998-10-23 IL IL13153498A patent/IL131534A/en not_active IP Right Cessation
- 1998-10-23 HU HU0004391A patent/HU227655B1/hu not_active IP Right Cessation
- 1998-10-23 NZ NZ336848A patent/NZ336848A/en not_active IP Right Cessation
- 1998-10-23 AU AU95275/98A patent/AU756671B2/en not_active Ceased
- 1998-10-23 US US09/319,772 patent/US6635942B2/en not_active Expired - Lifetime
- 1998-10-23 AT AT98948658T patent/ATE287576T1/de active
- 1998-10-23 BR BRPI9808074-1A patent/BR9808074B1/pt not_active IP Right Cessation
- 1998-10-23 TR TR1999/03266T patent/TR199903266T1/xx unknown
- 1998-10-23 DK DK98948658T patent/DK1032949T3/da active
- 1998-10-23 CA CA002275298A patent/CA2275298C/en not_active Expired - Fee Related
- 1998-10-23 RU RU99118904/28A patent/RU2219620C2/ru not_active IP Right Cessation
- 1998-10-23 PL PL337092A patent/PL192742B1/pl unknown
- 1998-10-23 JP JP54086599A patent/JP3874429B2/ja not_active Expired - Fee Related
-
1999
- 1999-04-26 MY MYPI99001623A patent/MY124379A/en unknown
- 1999-04-27 AR ARP990101934A patent/AR019111A1/es active IP Right Grant
- 1999-04-28 TW TW088106833A patent/TW434915B/zh not_active IP Right Cessation
- 1999-07-20 NO NO993552A patent/NO993552L/no not_active Application Discontinuation
- 1999-09-01 BG BG103706A patent/BG64069B1/bg unknown
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG | Grant, registration |