ES2073407T3 - Elemento fotovoltaico con union pin, celulas tandem y triples. - Google Patents

Elemento fotovoltaico con union pin, celulas tandem y triples.

Info

Publication number
ES2073407T3
ES2073407T3 ES88310933T ES88310933T ES2073407T3 ES 2073407 T3 ES2073407 T3 ES 2073407T3 ES 88310933 T ES88310933 T ES 88310933T ES 88310933 T ES88310933 T ES 88310933T ES 2073407 T3 ES2073407 T3 ES 2073407T3
Authority
ES
Spain
Prior art keywords
type
photovoltaic element
tandem
pin joint
union
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES88310933T
Other languages
English (en)
Inventor
Katsumi Nakagawa
Shunichi Ishihara
Masahiro Kanai
Kozo Arao
Yasushi Fujioka
Akira Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2073407T3 publication Critical patent/ES2073407T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

UN ELEMENTO FOTOVOLTAICO DE UNION POR REMACHE MEJORADO, QUE PRODUCE ENERGIA FOTOELECTROMOTRIZ POR UNION DE UNA CAPA SEMICONDUCTORA TIPO P, UNA CAPA SEMICONDUCTORA TIPO I, Y UNA CAPA SEMICONDUCTORA TIPO N, CARACTERIZADO PORQUE POR LO MENOS UNA DE DICHAS CAPAS SEMICONDUCTORAS TIPO P Y N CONTIENE UNA PELICULA DE ZNSE:H:M TIPO P O N, DONDE M ES UN DOPANTE TIPO P O N, LA CANTIDAD DE HIDROGENO ESTA ENTRE 1 Y 4 % EN ATOMOS; Y DICHA PELICULA CONTIENE CAMPOS DE GRANO DE CRISTAL EN UNA PROPORCION DE 65-85 % EN VOLUMEN POR UNIDAD DE VOLUMEN; Y DICHA CAPA SEMICONDUCTORA TIPO I TIENE UNA PELICULA DE CRISTAL NO SIMPLE DE SI (H, F) O UNA PELICULA DE CRISTAL NO SIMPLE DE SI (C, GE) (H, F).
ES88310933T 1987-11-20 1988-11-18 Elemento fotovoltaico con union pin, celulas tandem y triples. Expired - Lifetime ES2073407T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29168587 1987-11-20

Publications (1)

Publication Number Publication Date
ES2073407T3 true ES2073407T3 (es) 1995-08-16

Family

ID=17772086

Family Applications (1)

Application Number Title Priority Date Filing Date
ES88310933T Expired - Lifetime ES2073407T3 (es) 1987-11-20 1988-11-18 Elemento fotovoltaico con union pin, celulas tandem y triples.

Country Status (7)

Country Link
US (1) US4926229A (es)
EP (1) EP0317350B1 (es)
AT (1) ATE124169T1 (es)
AU (1) AU624586B2 (es)
CA (1) CA1299716C (es)
DE (1) DE3854040T2 (es)
ES (1) ES2073407T3 (es)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5140385A (en) * 1987-03-27 1992-08-18 Misawa Co., Ltd. Light emitting element and method of manufacture
AU1745695A (en) * 1994-06-03 1996-01-04 Materials Research Corporation A method of nitridization of titanium thin films
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
JP3312710B2 (ja) * 1994-12-21 2002-08-12 株式会社サトー ラベルプリンタ
EP0827213A3 (en) * 1996-08-28 1999-05-19 Canon Kabushiki Kaisha Photovoltaic device
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
AU3594000A (en) 1999-03-01 2000-09-21 Sensors Unlimited Inc. Epitaxially grown p-type diffusion source for photodiode fabrication
US7960645B2 (en) 2003-05-07 2011-06-14 Imec Germanium solar cell and method for the production thereof
US7964789B2 (en) * 2003-05-07 2011-06-21 Imec Germanium solar cell and method for the production thereof
KR101608953B1 (ko) * 2007-11-09 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
EP2105972A3 (en) 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
US8778811B2 (en) * 2011-08-18 2014-07-15 Intermolecular, Inc. Low temperature migration enhanced Si-Ge epitaxy with plasma assisted surface activation
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS56116673A (en) * 1980-02-19 1981-09-12 Sharp Corp Amorphous thin film solar cell
US4292461A (en) * 1980-06-20 1981-09-29 International Business Machines Corporation Amorphous-crystalline tandem solar cell
JPS5752176A (en) * 1980-09-16 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS57160174A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Thin film solar battery
JPS61120480A (ja) * 1984-11-16 1986-06-07 Hitachi Ltd 光電変換装置
JPS61189649A (ja) 1985-02-18 1986-08-23 Canon Inc 堆積膜形成法
JPH0691112B2 (ja) 1985-02-18 1994-11-14 キヤノン株式会社 堆積膜形成法
CA1303194C (en) * 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
US4888062A (en) * 1987-08-31 1989-12-19 Canon Kabushiki Kaisha Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %

Also Published As

Publication number Publication date
EP0317350A2 (en) 1989-05-24
ATE124169T1 (de) 1995-07-15
AU624586B2 (en) 1992-06-18
AU2578788A (en) 1989-06-01
EP0317350A3 (en) 1990-05-09
CA1299716C (en) 1992-04-28
EP0317350B1 (en) 1995-06-21
DE3854040T2 (de) 1995-10-26
US4926229A (en) 1990-05-15
DE3854040D1 (de) 1995-07-27

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