AR227694A1 - Procedimiento para soplar gases con un alto contenido de oxigeno al interior de un bano de fundicion que contiene metales no ferrosos - Google Patents
Procedimiento para soplar gases con un alto contenido de oxigeno al interior de un bano de fundicion que contiene metales no ferrososInfo
- Publication number
- AR227694A1 AR227694A1 AR287640A AR28764081A AR227694A1 AR 227694 A1 AR227694 A1 AR 227694A1 AR 287640 A AR287640 A AR 287640A AR 28764081 A AR28764081 A AR 28764081A AR 227694 A1 AR227694 A1 AR 227694A1
- Authority
- AR
- Argentina
- Prior art keywords
- procedure
- oxygen content
- bath containing
- high oxygen
- containing non
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803045922 DE3045922A1 (de) | 1980-12-05 | 1980-12-05 | Verfahren zum herstellen von strukturen von aus siliziden oder aus silizid-polysilizium bestehenden schichten durch reaktives sputteraetzen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AR227694A1 true AR227694A1 (es) | 1982-11-30 |
Family
ID=6118425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AR287640A AR227694A1 (es) | 1980-12-05 | 1981-11-30 | Procedimiento para soplar gases con un alto contenido de oxigeno al interior de un bano de fundicion que contiene metales no ferrosos |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4360414A (fr) |
| EP (1) | EP0053711B1 (fr) |
| JP (1) | JPS57121232A (fr) |
| AR (1) | AR227694A1 (fr) |
| DE (1) | DE3045922A1 (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3216823A1 (de) * | 1982-05-05 | 1983-11-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von strukturen von aus metallsilizid und polysilizium bestehenden doppelschichten auf integrierte halbleiterschaltungen enthaltenden substraten durch reaktives ionenaetzen |
| DE3231457A1 (de) * | 1982-08-24 | 1984-03-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum erzeugen von strukturen fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen |
| US4462882A (en) * | 1983-01-03 | 1984-07-31 | Massachusetts Institute Of Technology | Selective etching of aluminum |
| EP0133452B1 (fr) * | 1983-05-10 | 1991-01-02 | Kabushiki Kaisha Toshiba | Procédé d'attaque par ions réactifs |
| US4470189A (en) * | 1983-05-23 | 1984-09-11 | International Business Machines Corporation | Process for making polycide structures |
| FR2555364B1 (fr) * | 1983-11-18 | 1990-02-02 | Hitachi Ltd | Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset |
| DE3613181C2 (de) * | 1986-04-18 | 1995-09-07 | Siemens Ag | Verfahren zum Erzeugen von Gräben mit einstellbarer Steilheit der Grabenwände in aus Silizium bestehenden Halbleitersubstraten |
| KR900003262B1 (ko) * | 1987-04-30 | 1990-05-12 | 삼성전자 주식회사 | 반도체 장치의 제조방법 |
| DE3935189A1 (de) * | 1989-10-23 | 1991-05-08 | Leybold Ag | Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen |
| US5354417A (en) * | 1993-10-13 | 1994-10-11 | Applied Materials, Inc. | Etching MoSi2 using SF6, HBr and O2 |
| JPH08213475A (ja) * | 1995-02-07 | 1996-08-20 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
| RU2194335C2 (ru) * | 2000-10-26 | 2002-12-10 | Акционерное общество открытого типа "НИИ молекулярной электроники и завод "Микрон" | Способ реактивного ионно-плазменного травления слоев ta, tan, taal |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2082505A5 (fr) * | 1970-03-18 | 1971-12-10 | Radiotechnique Compelec | |
| JPS5368978A (en) * | 1976-12-01 | 1978-06-19 | Mitsubishi Electric Corp | Etching method |
| DE2658448C3 (de) * | 1976-12-23 | 1979-09-20 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Ätzen einer auf einem Halbleiterkörper aufgebrachten Schicht aus Siliciumnitrid in einem Gasplasma |
| FR2376904A1 (fr) * | 1977-01-11 | 1978-08-04 | Alsthom Atlantique | Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma |
| US4229247A (en) * | 1978-12-26 | 1980-10-21 | International Business Machines Corporation | Glow discharge etching process for chromium |
| US4213818A (en) * | 1979-01-04 | 1980-07-22 | Signetics Corporation | Selective plasma vapor etching process |
| US4214946A (en) * | 1979-02-21 | 1980-07-29 | International Business Machines Corporation | Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant |
| US4283249A (en) * | 1979-05-02 | 1981-08-11 | International Business Machines Corporation | Reactive ion etching |
-
1980
- 1980-12-05 DE DE19803045922 patent/DE3045922A1/de not_active Ceased
-
1981
- 1981-10-28 EP EP81109137A patent/EP0053711B1/fr not_active Expired
- 1981-11-19 US US06/322,887 patent/US4360414A/en not_active Expired - Fee Related
- 1981-11-30 AR AR287640A patent/AR227694A1/es active
- 1981-12-04 JP JP56195498A patent/JPS57121232A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57121232A (en) | 1982-07-28 |
| EP0053711B1 (fr) | 1985-05-22 |
| US4360414A (en) | 1982-11-23 |
| DE3045922A1 (de) | 1982-07-08 |
| EP0053711A2 (fr) | 1982-06-16 |
| EP0053711A3 (en) | 1983-01-19 |
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