AT228274B - Semiconductor arrangement with an essentially monocrystalline base body, in particular made of silicon - Google Patents

Semiconductor arrangement with an essentially monocrystalline base body, in particular made of silicon

Info

Publication number
AT228274B
AT228274B AT937761A AT937761A AT228274B AT 228274 B AT228274 B AT 228274B AT 937761 A AT937761 A AT 937761A AT 937761 A AT937761 A AT 937761A AT 228274 B AT228274 B AT 228274B
Authority
AT
Austria
Prior art keywords
semiconductor arrangement
silicon
base body
particular made
monocrystalline base
Prior art date
Application number
AT937761A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT228274B publication Critical patent/AT228274B/en

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Landscapes

  • Paints Or Removers (AREA)

Description

  

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   Halbleiteranordnung mit einem im wesentlichen einkristallinen Grundkörper, insbesondere aus Silizium 
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   <Desc / Clms Page number 1>
 



   Semiconductor arrangement with an essentially monocrystalline base body, in particular made of silicon
 EMI1.1

Claims (1)

Photodioden,PATENTANSPRÜCHE : 1. Halbleiteranordnung mit einem im wesentlichen einkristallinen Grundkörper, insbesondere aus Silizium, und einem oder mehreren pn-Übergängen sowie einem die Oberfläche des Halbleiterkörpers, zumindest an den Stellen, an denen ein pn-Übergang zutage tritt, schützenden Lacküberzug, dadurch gekennzeichnet, dass dem Lack ein schwach sauer reagierender Stoff zugesetzt ist. Photodiodes, PATENT CLAIMS: 1. Semiconductor arrangement with an essentially monocrystalline base body, in particular made of silicon, and one or more pn junctions and a protective lacquer coating that protects the surface of the semiconductor body, at least at the points where a pn junction is revealed, characterized in that the A weakly acidic substance is added to paint. 2. Halbleiteranordnung nach Anspruch 1, dadurch gekennzeichnet, dass ein mindestens bis zu Temperaturen von 1500C bis 2000C beständiger Lack mit einem Zusatz eines Säureanhydrids die Oberfläche bedeckt. 2. Semiconductor arrangement according to claim 1, characterized in that a varnish which is resistant to temperatures of at least 1500C to 2000C with an addition of an acid anhydride covers the surface. 3. Halbleiteranordnung nach Anspruch 1, dadurch gekennzeichnet, dass dem Lack Titandioxyd zu- gesetzt ist. 3. Semiconductor arrangement according to claim 1, characterized in that titanium dioxide is added to the lacquer.
AT937761A 1961-02-10 1961-12-12 Semiconductor arrangement with an essentially monocrystalline base body, in particular made of silicon AT228274B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE228274X 1961-02-10

Publications (1)

Publication Number Publication Date
AT228274B true AT228274B (en) 1963-07-10

Family

ID=5867112

Family Applications (1)

Application Number Title Priority Date Filing Date
AT937761A AT228274B (en) 1961-02-10 1961-12-12 Semiconductor arrangement with an essentially monocrystalline base body, in particular made of silicon

Country Status (1)

Country Link
AT (1) AT228274B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1257978B (en) * 1965-04-06 1968-01-04 Halbleiterwerk Frankfurt Oder Process for the production of a lacquer coating for the stabilization of semiconductor components

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1257978B (en) * 1965-04-06 1968-01-04 Halbleiterwerk Frankfurt Oder Process for the production of a lacquer coating for the stabilization of semiconductor components

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