AT336080B - SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE - Google Patents

SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE

Info

Publication number
AT336080B
AT336080B AT564470A AT564470A AT336080B AT 336080 B AT336080 B AT 336080B AT 564470 A AT564470 A AT 564470A AT 564470 A AT564470 A AT 564470A AT 336080 B AT336080 B AT 336080B
Authority
AT
Austria
Prior art keywords
semi
gate electrode
field effect
effect transistors
insulated gate
Prior art date
Application number
AT564470A
Other languages
German (de)
Other versions
ATA564470A (en
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA564470A publication Critical patent/ATA564470A/en
Application granted granted Critical
Publication of AT336080B publication Critical patent/AT336080B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
AT564470A 1969-06-26 1970-06-23 SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE AT336080B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6909788.A NL165005C (en) 1969-06-26 1969-06-26 SEMICONDUCTOR DEVICE CONTAINING FIELD EFFECT TRANSISTORS WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE.

Publications (2)

Publication Number Publication Date
ATA564470A ATA564470A (en) 1976-08-15
AT336080B true AT336080B (en) 1977-04-12

Family

ID=19807307

Family Applications (1)

Application Number Title Priority Date Filing Date
AT564470A AT336080B (en) 1969-06-26 1970-06-23 SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE

Country Status (8)

Country Link
AT (1) AT336080B (en)
BE (1) BE752480A (en)
CH (1) CH514937A (en)
DE (1) DE2029058C2 (en)
FR (1) FR2047958B1 (en)
GB (1) GB1325332A (en)
NL (1) NL165005C (en)
SE (1) SE365905B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528229B1 (en) * 1971-03-19 1980-07-26
US3728161A (en) * 1971-12-28 1973-04-17 Bell Telephone Labor Inc Integrated circuits with ion implanted chan stops
JPS559834B2 (en) * 1972-03-31 1980-03-12
JPS551189A (en) * 1979-05-07 1980-01-07 Nec Corp Semiconductor device
JPS55102274A (en) * 1980-01-25 1980-08-05 Agency Of Ind Science & Technol Insulated gate field effect transistor
GB2123605A (en) * 1982-06-22 1984-02-01 Standard Microsyst Smc MOS integrated circuit structure and method for its fabrication

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636316A (en) * 1962-08-23 1900-01-01
US3400383A (en) * 1964-08-05 1968-09-03 Texas Instruments Inc Trainable decision system and adaptive memory element
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
GB1145092A (en) * 1965-06-09 1969-03-12 Mullard Ltd Improvements in insulated gate field effect semiconductor devices
GB1155578A (en) * 1965-10-08 1969-06-18 Sony Corp Field Effect Transistor
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
GB1131675A (en) * 1966-07-11 1968-10-23 Hitachi Ltd Semiconductor device
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
GB1203298A (en) * 1967-01-10 1970-08-26 Hewlett Packard Co Mis integrated circuit and method of fabricating the same

Also Published As

Publication number Publication date
FR2047958A1 (en) 1971-03-19
DE2029058A1 (en) 1971-01-07
FR2047958B1 (en) 1975-09-26
SE365905B (en) 1974-04-01
NL165005C (en) 1981-02-16
ATA564470A (en) 1976-08-15
GB1325332A (en) 1973-08-01
CH514937A (en) 1971-10-31
NL165005B (en) 1980-09-15
NL6909788A (en) 1970-12-29
BE752480A (en) 1970-12-24
DE2029058C2 (en) 1983-06-23

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