JPS551189A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS551189A
JPS551189A JP5480579A JP5480579A JPS551189A JP S551189 A JPS551189 A JP S551189A JP 5480579 A JP5480579 A JP 5480579A JP 5480579 A JP5480579 A JP 5480579A JP S551189 A JPS551189 A JP S551189A
Authority
JP
Japan
Prior art keywords
source
drain regions
substrate
region
deterioration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5480579A
Other languages
Japanese (ja)
Other versions
JPS5528553B2 (en
Inventor
Shigeru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5480579A priority Critical patent/JPS551189A/en
Publication of JPS551189A publication Critical patent/JPS551189A/en
Publication of JPS5528553B2 publication Critical patent/JPS5528553B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent the deterioration in the dielectric strength without less yield of production with the distance of the channel-stopper region from the botton made less than that of the source and drain regions in the integrated circuit of the insulated gate type FET.
CONSTITUTION: In a semiconductor apparatus in which insulated gate type transistors 1 and 2 are arranged on a single conductivity type semiconductor substrate 6 with an insulated separate region adjacent to the transistors 1 and 2, source and drain regions 3, 3' and 3" are formed on the main surface of the substrate 6 in contact with a portion of an insulating silicon dioxide film 8. In addition, a single conductivity type channel stopper region 5 is provided in such a manner as to be higher in concentration than a substrate 1 arranged on the bottom of the insulating film. In this manner, the distance of the region 5 from the bottom is made less than that of the source and drain regions 3 and 3' and 3" thereby preventing the deterioration in the dielectric strength without less yield of production.
COPYRIGHT: (C)1980,JPO&Japio
JP5480579A 1979-05-07 1979-05-07 Semiconductor device Granted JPS551189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5480579A JPS551189A (en) 1979-05-07 1979-05-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5480579A JPS551189A (en) 1979-05-07 1979-05-07 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1517971A Division JPS5528229B1 (en) 1971-03-19 1971-03-19

Publications (2)

Publication Number Publication Date
JPS551189A true JPS551189A (en) 1980-01-07
JPS5528553B2 JPS5528553B2 (en) 1980-07-29

Family

ID=12980941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5480579A Granted JPS551189A (en) 1979-05-07 1979-05-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS551189A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029058A1 (en) * 1969-06-26 1971-01-07 N V Philips Gloeilampenfabne ken, Eindhoven (Niederlande) Semiconductor arrangement with a field effect transistor with an isolated gate electrode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029058A1 (en) * 1969-06-26 1971-01-07 N V Philips Gloeilampenfabne ken, Eindhoven (Niederlande) Semiconductor arrangement with a field effect transistor with an isolated gate electrode

Also Published As

Publication number Publication date
JPS5528553B2 (en) 1980-07-29

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