ATA192490A - Verfahren zur diffundierung von die lebensdauer der minoritätsträger verringernden platinatomen - Google Patents

Verfahren zur diffundierung von die lebensdauer der minoritätsträger verringernden platinatomen

Info

Publication number
ATA192490A
ATA192490A AT0192490A AT192490A ATA192490A AT A192490 A ATA192490 A AT A192490A AT 0192490 A AT0192490 A AT 0192490A AT 192490 A AT192490 A AT 192490A AT A192490 A ATA192490 A AT A192490A
Authority
AT
Austria
Prior art keywords
lifetime
platinum atoms
diffusing platinum
minority
holders
Prior art date
Application number
AT0192490A
Other languages
English (en)
Other versions
AT398014B (de
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Priority to AT99193A priority Critical patent/AT399419B/de
Publication of ATA192490A publication Critical patent/ATA192490A/de
Application granted granted Critical
Publication of AT398014B publication Critical patent/AT398014B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/18—Diffusion lifetime killers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
AT0192490A 1989-09-21 1990-09-21 Verfahren zur diffundierung von die lebensdauer der minoritätsträger verringernden platinatomen AT398014B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT99193A AT399419B (de) 1989-09-21 1993-05-19 Verfahren zur einführung von platinatomen in eine siliziumscheibe zur verringerung der minoritätsträger-lebensdauer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/410,323 US4925812A (en) 1989-09-21 1989-09-21 Platinum diffusion process

Publications (2)

Publication Number Publication Date
ATA192490A true ATA192490A (de) 1993-12-15
AT398014B AT398014B (de) 1994-08-25

Family

ID=23624227

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0192490A AT398014B (de) 1989-09-21 1990-09-21 Verfahren zur diffundierung von die lebensdauer der minoritätsträger verringernden platinatomen

Country Status (6)

Country Link
US (1) US4925812A (de)
JP (1) JP2728147B2 (de)
AT (1) AT398014B (de)
DE (1) DE4029826A1 (de)
GB (1) GB2236119B (de)
IT (1) IT1246685B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JP2752184B2 (ja) * 1989-09-11 1998-05-18 株式会社東芝 電力用半導体装置
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
IT1244119B (it) * 1990-11-29 1994-07-05 Cons Ric Microelettronica Processo di introduzione e diffusione di ioni di platino in una fetta di silicio
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
KR100203982B1 (ko) * 1993-03-12 1999-06-15 야마자끼 순페이 반도체장치 및 그의 제작방법
JP3637069B2 (ja) 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5635426A (en) * 1993-08-26 1997-06-03 Fujitsu Limited Method of making a semiconductor device having a silicide local interconnect
EP0675527B1 (de) * 1994-03-30 1999-11-10 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Verfahren zur Herstellung von bipolaren Transistoren mit kontrollierter Speicherzeit
US6426248B2 (en) * 2000-02-15 2002-07-30 International Rectifier Corporation Process for forming power MOSFET device in float zone, non-epitaxial silicon
US6358825B1 (en) 2000-11-21 2002-03-19 Fairchild Semiconductor Corporation Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control
US20020195613A1 (en) * 2001-04-02 2002-12-26 International Rectifier Corp. Low cost fast recovery diode and process of its manufacture
AU2002246316A1 (en) * 2002-04-08 2003-10-27 Council Of Scientific And Industrial Research Process for the production of neodymium-iron-boron permanent magnet alloy powder
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement
CN105814694B (zh) * 2014-10-03 2019-03-08 富士电机株式会社 半导体装置以及半导体装置的制造方法
CN109671625A (zh) * 2017-10-13 2019-04-23 华润微电子（重庆）有限公司 快恢复二极管的制备方法
CN112002761A (zh) * 2020-09-07 2020-11-27 深圳市美浦森半导体有限公司 一种集成frd的dmos器件的制造方法及dmos器件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728592A (en) * 1969-05-09 1973-04-17 Ibm Semiconductor structure having reduced carrier lifetime
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
US3963523A (en) * 1973-04-26 1976-06-15 Matsushita Electronics Corporation Method of manufacturing semiconductor devices
DE2735769C3 (de) * 1977-08-09 1980-03-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Einstellung der Minoritätsladungsträgerlebensdauer in Halbleiterbauelementen aus einkristallinem Silizium
JPS54106178A (en) * 1978-02-08 1979-08-20 Mitsubishi Electric Corp Thyristor and its manufacture
US4206540A (en) * 1978-06-02 1980-06-10 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier
JPS5939898B2 (ja) * 1978-09-26 1984-09-27 三菱電機株式会社 半導体装置の製造方法
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
US4322453A (en) * 1980-12-08 1982-03-30 International Business Machines Corporation Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering
US4398344A (en) * 1982-03-08 1983-08-16 International Rectifier Corporation Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface
JPS6084881A (ja) * 1983-10-17 1985-05-14 Toshiba Corp 大電力ｍｏｓ　ｆｅｔとその製造方法
JPS618916A (ja) * 1984-06-21 1986-01-16 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン ド−プ領域の形成方法
US4791074A (en) * 1986-08-29 1988-12-13 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor apparatus
US4855799A (en) * 1987-12-22 1989-08-08 Kabushiki Kaisha Toshiba Power MOS FET with carrier lifetime killer

Also Published As

Publication number Publication date
GB2236119B (en) 1994-05-25
GB9018319D0 (en) 1990-10-03
AT398014B (de) 1994-08-25
JP2728147B2 (ja) 1998-03-18
IT9021494A1 (it) 1992-03-17
DE4029826C2 (de) 1993-09-09
US4925812A (en) 1990-05-15
JPH03138926A (ja) 1991-06-13
IT9021494A0 (it) 1990-09-17
IT1246685B (it) 1994-11-25
DE4029826A1 (de) 1991-04-04
GB2236119A (en) 1991-03-27

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties