ATA774874A - Verfahren zum herstellen einer halbleiteranordnung aus silizium - Google Patents

Verfahren zum herstellen einer halbleiteranordnung aus silizium

Info

Publication number
ATA774874A
ATA774874A AT774874A AT774874A ATA774874A AT A774874 A ATA774874 A AT A774874A AT 774874 A AT774874 A AT 774874A AT 774874 A AT774874 A AT 774874A AT A774874 A ATA774874 A AT A774874A
Authority
AT
Austria
Prior art keywords
silicon
producing
semiconductor arrangement
semiconductor
arrangement
Prior art date
Application number
AT774874A
Other languages
English (en)
Other versions
AT348023B (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA774874A publication Critical patent/ATA774874A/de
Application granted granted Critical
Publication of AT348023B publication Critical patent/AT348023B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338Etching
    • C04B41/5353Wet etching, e.g. with etchants dissolved in organic solvents
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/978Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT774874A 1973-11-29 1974-09-26 Verfahren zum herstellen einer halbleiter- anordnung aus silizium AT348023B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2359511A DE2359511C2 (de) 1973-11-29 1973-11-29 Verfahren zum lokalisierten Ätzen von Gräben in Siliciumkristallen

Publications (2)

Publication Number Publication Date
ATA774874A true ATA774874A (de) 1978-06-15
AT348023B AT348023B (de) 1979-01-25

Family

ID=5899430

Family Applications (1)

Application Number Title Priority Date Filing Date
AT774874A AT348023B (de) 1973-11-29 1974-09-26 Verfahren zum herstellen einer halbleiter- anordnung aus silizium

Country Status (8)

Country Link
US (1) US3977925A (de)
JP (1) JPS5086985A (de)
AT (1) AT348023B (de)
CA (1) CA1036473A (de)
DE (1) DE2359511C2 (de)
FR (1) FR2252907B1 (de)
GB (1) GB1487849A (de)
IT (1) IT1025994B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143455A (en) * 1976-03-11 1979-03-13 Siemens Aktiengesellschaft Method of producing a semiconductor component
IT1109829B (it) * 1977-07-05 1985-12-23 Ibm Processo di fabbricazione di cercuiti integrati
US4354896A (en) * 1980-08-05 1982-10-19 Texas Instruments Incorporated Formation of submicron substrate element
US4395304A (en) * 1982-05-11 1983-07-26 Rca Corporation Selective etching of phosphosilicate glass
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon
US5135607A (en) * 1986-04-11 1992-08-04 Canon Kabushiki Kaisha Process for forming deposited film
DE3879771D1 (de) * 1987-05-27 1993-05-06 Siemens Ag Aetzverfahren zum erzeugen von lochoeffnungen oder graeben in n-dotiertem silizium.
US4943719A (en) * 1989-01-17 1990-07-24 The Board Of Trustees Of The Leland Stanford University Microminiature cantilever stylus
US5021364A (en) * 1989-10-31 1991-06-04 The Board Of Trustees Of The Leland Stanford Junior University Microcantilever with integral self-aligned sharp tetrahedral tip
JP3194594B2 (ja) * 1990-09-26 2001-07-30 株式会社日立製作所 構造体の製造方法
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法,エッチング方法及び自動エッチング装置,並びに半導体装置の製造方法
DE4305297C2 (de) * 1993-02-20 1998-09-24 Telefunken Microelectron Strukturbeize für Halbleiter und deren Anwendung
US5484507A (en) * 1993-12-01 1996-01-16 Ford Motor Company Self compensating process for aligning an aperture with crystal planes in a substrate
US5575929A (en) * 1995-06-05 1996-11-19 The Regents Of The University Of California Method for making circular tubular channels with two silicon wafers
JPH09260342A (ja) * 1996-03-18 1997-10-03 Mitsubishi Electric Corp 半導体装置の製造方法及び製造装置
US5753561A (en) * 1996-09-30 1998-05-19 Vlsi Technology, Inc. Method for making shallow trench isolation structure having rounded corners
JP2000164586A (ja) * 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
US6914009B2 (en) * 2001-05-07 2005-07-05 Applied Materials Inc Method of making small transistor lengths

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173101A (en) * 1961-02-15 1965-03-09 Westinghouse Electric Corp Monolithic two stage unipolar-bipolar semiconductor amplifier device
GB1273150A (en) * 1968-10-21 1972-05-03 Associated Semiconductor Mft Improvements in and relating to methods of etching semiconductor body surfaces
US3680205A (en) * 1970-03-03 1972-08-01 Dionics Inc Method of producing air-isolated integrated circuits
JPS513474B1 (de) * 1970-06-25 1976-02-03
US3796612A (en) * 1971-08-05 1974-03-12 Scient Micro Syst Inc Semiconductor isolation method utilizing anisotropic etching and differential thermal oxidation
JPS4839339A (de) * 1971-09-25 1973-06-09
JPS519269B2 (de) * 1972-05-19 1976-03-25
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
US3839111A (en) * 1973-08-20 1974-10-01 Rca Corp Method of etching silicon oxide to produce a tapered edge thereon

Also Published As

Publication number Publication date
AT348023B (de) 1979-01-25
DE2359511A1 (de) 1975-06-05
FR2252907B1 (de) 1982-06-04
FR2252907A1 (de) 1975-06-27
IT1025994B (it) 1978-08-30
US3977925A (en) 1976-08-31
GB1487849A (en) 1977-10-05
DE2359511C2 (de) 1987-03-05
JPS5086985A (de) 1975-07-12
CA1036473A (en) 1978-08-15

Similar Documents

Publication Publication Date Title
ATA774874A (de) Verfahren zum herstellen einer halbleiteranordnung aus silizium
CH505473A (de) Verfahren zum Herstellen einer Halbleitervorrichtung
SE388073B (sv) Metod for framstellning av integrerade kretsar
CH523970A (de) Verfahren zum Herstellen hochreiner, aus Silicium bestehender einkristalliner Schichten
CH524251A (de) Verfahren zur Herstellung einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung
AT332118B (de) Verfahren zum herstellen kleinteiliger olefinpolymerisate
IT1010166B (it) Metodo per la fabbricazione di dispositivi semiconduttori
CH516227A (de) Verfahren zum Herstellen einer Sperrschicht-Halbleitervorrichtung
AT352518B (de) Verfahren zum herstellen einer wickelhuelse
CH498493A (de) Verfahren zum Herstellen monolithischer Halbleiteranordnungen
CH526848A (de) Verfahren zum Herstellen einer Spule
CH420072A (de) Verfahren zum Herstellen von einkristallinen Halbleiterstäben
CH516476A (de) Verfahren zum Herstellen eines Kristalls einer Halbleiterverbindung
CH525027A (de) Verfahren zum epitaktischen Niederschlagen einer Halbleiterverbindung
CH458299A (de) Verfahren zum Herstellen einer einkristallinen Halbleiterschicht
AT318007B (de) Verfahren zum Herstellen einer gut haftenden Metallschicht auf der Oberfläche einer Halbleiterscheibe
CH519788A (de) Verfahren zum Herstellen von diffundierten Halbleiterbauelementen aus Silicium
AT323235B (de) Verfahren zum herstellen epitaktischer schichten halbleitender a<iii>b<v>-verbindungen
IT1028009B (it) Metodo di accrescimento di un composto semiconduttore
CH452708A (de) Verfahren zum Herstellen einer aus gegeneinander isolierten Halbleiterbereichen bestehenden Halbleitervorrichtung
CH468721A (de) Verfahren zum gleichzeitigen Herstellen einer Vielzahl von Halbleiterbauelementen
AT324426B (de) Verfahren zum herstellen eines pnp-silizium-transistors
CH530093A (de) Verfahren zur Herstellung einer dünnen Halbleiterscheibe
CH537985A (de) Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial
AT310256B (de) Verfahren zum Herstellen von strukturierten Siliziumnitridschichten

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee