ATE107968T1 - Ionenimplantationsanlage zum gleichmässigen einschuss eines ionenstrahls in ein substrat. - Google Patents

Ionenimplantationsanlage zum gleichmässigen einschuss eines ionenstrahls in ein substrat.

Info

Publication number
ATE107968T1
ATE107968T1 AT89121435T AT89121435T ATE107968T1 AT E107968 T1 ATE107968 T1 AT E107968T1 AT 89121435 T AT89121435 T AT 89121435T AT 89121435 T AT89121435 T AT 89121435T AT E107968 T1 ATE107968 T1 AT E107968T1
Authority
AT
Austria
Prior art keywords
substrate
ion beam
ion
ion implantation
implantation system
Prior art date
Application number
AT89121435T
Other languages
English (en)
Inventor
Tadamoto Tamai
Junichi Murakami
Original Assignee
Sumitomo Eaton Nova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Eaton Nova filed Critical Sumitomo Eaton Nova
Application granted granted Critical
Publication of ATE107968T1 publication Critical patent/ATE107968T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AT89121435T 1988-11-21 1989-11-20 Ionenimplantationsanlage zum gleichmässigen einschuss eines ionenstrahls in ein substrat. ATE107968T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63292507A JP2717822B2 (ja) 1988-11-21 1988-11-21 イオン注入装置

Publications (1)

Publication Number Publication Date
ATE107968T1 true ATE107968T1 (de) 1994-07-15

Family

ID=17782713

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89121435T ATE107968T1 (de) 1988-11-21 1989-11-20 Ionenimplantationsanlage zum gleichmässigen einschuss eines ionenstrahls in ein substrat.

Country Status (6)

Country Link
US (1) US5030835A (de)
EP (1) EP0378782B1 (de)
JP (1) JP2717822B2 (de)
KR (1) KR0164841B1 (de)
AT (1) ATE107968T1 (de)
DE (1) DE68916529T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8922225D0 (en) * 1989-10-03 1989-11-15 Superion Ltd Apparatus and methods relating to ion implantation
US5633506A (en) * 1995-07-17 1997-05-27 Eaton Corporation Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
JP3064269B2 (ja) * 1998-10-30 2000-07-12 アプライド マテリアルズ インコーポレイテッド イオン注入装置及びイオン注入方法
KR100298587B1 (ko) * 1999-11-22 2001-11-05 윤종용 이온 주입 장치
DE10115912A1 (de) * 2001-03-30 2002-10-17 Infineon Technologies Ag Verfahren zur Herstellung einer Halbleiteranordnung und Verwendung einer Ionenstrahlanlage zur Durchführung des Verfahrens
DE10219123B4 (de) 2002-04-29 2004-06-03 Infineon Technologies Ag Verfahren zur Strukturierung keramischer Schichten auf Halbleitersubstanzen mit unebener Topographie
KR100769254B1 (ko) * 2006-04-28 2007-10-23 한국원자력연구원 이온빔 균일 조사용 정렬 지그 및 이를 이용한 녹즙기 기어표면 개질 방법
DE102011106044A1 (de) * 2011-06-27 2012-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation
CN103928282B (zh) * 2014-05-06 2016-03-16 武汉大学 一种离子注入样品台
KR20230118907A (ko) * 2021-01-19 2023-08-14 시바우라 기카이 가부시키가이샤 표면 처리 장치 및 표면 처리 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4405864A (en) * 1981-09-08 1983-09-20 Rca Corporation Ion implanter end processing station
JPS59184443A (ja) * 1983-04-01 1984-10-19 Hitachi Ltd イオン打込装置
JPS625548A (ja) * 1985-07-01 1987-01-12 Hitachi Ltd イオンビ−ム加工装置
JPS6276147A (ja) * 1985-09-28 1987-04-08 Nec Kansai Ltd イオン注入装置
US4745287A (en) * 1986-10-23 1988-05-17 Ionex/Hei Ion implantation with variable implant angle

Also Published As

Publication number Publication date
DE68916529T2 (de) 1994-10-20
EP0378782A3 (de) 1991-01-23
DE68916529D1 (de) 1994-08-04
JPH02139846A (ja) 1990-05-29
EP0378782A2 (de) 1990-07-25
EP0378782B1 (de) 1994-06-29
US5030835A (en) 1991-07-09
JP2717822B2 (ja) 1998-02-25
KR0164841B1 (ko) 1999-01-15
KR900008625A (ko) 1990-06-04

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