ATE111637T1 - Diamanttransistor und verfahren zu seiner herstellung. - Google Patents

Diamanttransistor und verfahren zu seiner herstellung.

Info

Publication number
ATE111637T1
ATE111637T1 AT89305259T AT89305259T ATE111637T1 AT E111637 T1 ATE111637 T1 AT E111637T1 AT 89305259 T AT89305259 T AT 89305259T AT 89305259 T AT89305259 T AT 89305259T AT E111637 T1 ATE111637 T1 AT E111637T1
Authority
AT
Austria
Prior art keywords
substrate
region
manufacture
light
diamond
Prior art date
Application number
AT89305259T
Other languages
English (en)
Inventor
Barbara Lynn Jones
Original Assignee
De Beers Ind Diamond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Ind Diamond filed Critical De Beers Ind Diamond
Application granted granted Critical
Publication of ATE111637T1 publication Critical patent/ATE111637T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Weting (AREA)
  • Carbon And Carbon Compounds (AREA)
AT89305259T 1988-05-24 1989-05-24 Diamanttransistor und verfahren zu seiner herstellung. ATE111637T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB888812216A GB8812216D0 (en) 1988-05-24 1988-05-24 Diamond transistor method of manufacture thereof

Publications (1)

Publication Number Publication Date
ATE111637T1 true ATE111637T1 (de) 1994-09-15

Family

ID=10637402

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89305259T ATE111637T1 (de) 1988-05-24 1989-05-24 Diamanttransistor und verfahren zu seiner herstellung.

Country Status (6)

Country Link
US (1) US5072264A (de)
EP (1) EP0343963B1 (de)
AT (1) ATE111637T1 (de)
DE (1) DE68918158T2 (de)
GB (1) GB8812216D0 (de)
ZA (1) ZA893922B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0456682B1 (de) * 1989-02-01 1994-12-07 Gersan Establishment P-n-p-diamanttransistor
US5099296A (en) * 1990-04-06 1992-03-24 Xerox Corporation Thin film transistor
US5173761A (en) * 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JPH04302172A (ja) * 1991-03-29 1992-10-26 Kobe Steel Ltd ダイヤモンドショットキーダイオード
US5254869A (en) * 1991-06-28 1993-10-19 Linear Technology Corporation Aluminum alloy/silicon chromium sandwich schottky diode
US5155559A (en) * 1991-07-25 1992-10-13 North Carolina State University High temperature refractory silicide rectifying contact
US5371378A (en) * 1992-06-08 1994-12-06 Kobe Steel Usa, Inc. Diamond metal base/permeable base transistor and method of making same
US5294814A (en) * 1992-06-09 1994-03-15 Kobe Steel Usa Vertical diamond field effect transistor
USH1287H (en) 1992-06-16 1994-02-01 The United States Of America As Represented By The Secretary Of The Navy Ion implanted diamond metal-insulator-semiconductor field effect transistor
JP3117563B2 (ja) * 1992-11-24 2000-12-18 株式会社神戸製鋼所 ダイヤモンド薄膜電界効果トランジスタ
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5455432A (en) * 1994-10-11 1995-10-03 Kobe Steel Usa Diamond semiconductor device with carbide interlayer
US6432804B1 (en) * 2000-05-22 2002-08-13 Sharp Laboratories Of America, Inc. Sputtered silicon target for fabrication of polysilicon thin film transistors
JP2003203930A (ja) * 2002-01-08 2003-07-18 Nec Compound Semiconductor Devices Ltd ショットキーゲート電界効果型トランジスタ
US7402835B2 (en) * 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
JP2010517263A (ja) 2007-01-22 2010-05-20 エレメント シックス リミテッド ダイヤモンド電子デバイス及びそれらの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
JPS58141572A (ja) * 1982-02-18 1983-08-22 Seiko Epson Corp 半導体装置
JPS59208821A (ja) * 1983-05-13 1984-11-27 Sumitomo Electric Ind Ltd 気相合成によるダイヤモンド半導体およびその製造方法
JPS60246627A (ja) * 1984-05-21 1985-12-06 Sumitomo Electric Ind Ltd ダイヤモンド半導体素子
JPS61207078A (ja) * 1985-03-11 1986-09-13 Sanyo Electric Co Ltd 電界効果トランジスタ
JP2536523B2 (ja) * 1987-05-14 1996-09-18 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
DE68918158D1 (de) 1994-10-20
EP0343963A3 (en) 1990-10-31
EP0343963A2 (de) 1989-11-29
DE68918158T2 (de) 1995-01-12
US5072264A (en) 1991-12-10
GB8812216D0 (en) 1988-06-29
EP0343963B1 (de) 1994-09-14
ZA893922B (en) 1990-02-28

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties