JPS5618445A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5618445A
JPS5618445A JP9396979A JP9396979A JPS5618445A JP S5618445 A JPS5618445 A JP S5618445A JP 9396979 A JP9396979 A JP 9396979A JP 9396979 A JP9396979 A JP 9396979A JP S5618445 A JPS5618445 A JP S5618445A
Authority
JP
Japan
Prior art keywords
glass layer
resist
layer
hole
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9396979A
Other languages
Japanese (ja)
Inventor
Genichi Adachi
Nobuo Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9396979A priority Critical patent/JPS5618445A/en
Publication of JPS5618445A publication Critical patent/JPS5618445A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a very small through hole and to have a high accuracy by a method wherein a glass layer is used as an etching resist of a polymide type resin film. CONSTITUTION:The first wiring conductive layer pattern 4 of an Al or the like is formed on the semiconductor substrate 1, on which unhardened polyimide resin 5 is applied and it is hardened by heating. Then, the glass layer 6 (phosphor doped glass or the like) is evaporated using CVD method. The polyimide resin film 5 is completely changed to imide and stabilized by the heat generated at the formation of said glass layer. Then a photo resist pattern 7 is formed, an etching is performed on the glass layer 6 and the polyimide layer successively, and then the through hole 8 is formed. Next, the resist 7 and the glass layer 6 are removed, and the second wiring conductive layer 9 is provided. As a result, an excellent mask matching can be performed because at the time of formation of the resist 7, the first pattern 4 can have a very small through hole, thereby enabling to have a very high accuracy.
JP9396979A 1979-07-24 1979-07-24 Manufacture of semiconductor device Pending JPS5618445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9396979A JPS5618445A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9396979A JPS5618445A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5618445A true JPS5618445A (en) 1981-02-21

Family

ID=14097222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9396979A Pending JPS5618445A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5618445A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material

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