ATE112416T1 - Halbleiter-elektronenemittierendes element. - Google Patents

Halbleiter-elektronenemittierendes element.

Info

Publication number
ATE112416T1
ATE112416T1 AT91117540T AT91117540T ATE112416T1 AT E112416 T1 ATE112416 T1 AT E112416T1 AT 91117540 T AT91117540 T AT 91117540T AT 91117540 T AT91117540 T AT 91117540T AT E112416 T1 ATE112416 T1 AT E112416T1
Authority
AT
Austria
Prior art keywords
region
carrier concentration
emission element
electron emission
semiconductor electron
Prior art date
Application number
AT91117540T
Other languages
English (en)
Inventor
Nobuo C O Canon Kabus Watanabe
Masahiko C O Canon Kab Okunuki
Takeo C O Canon Kabu Tsukamoto
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE112416T1 publication Critical patent/ATE112416T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
AT91117540T 1990-10-13 1991-10-14 Halbleiter-elektronenemittierendes element. ATE112416T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27391190 1990-10-13
JP3249214A JPH0512988A (ja) 1990-10-13 1991-09-27 半導体電子放出素子

Publications (1)

Publication Number Publication Date
ATE112416T1 true ATE112416T1 (de) 1994-10-15

Family

ID=26539160

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91117540T ATE112416T1 (de) 1990-10-13 1991-10-14 Halbleiter-elektronenemittierendes element.

Country Status (6)

Country Link
US (1) US5414272A (de)
EP (1) EP0481419B1 (de)
JP (1) JPH0512988A (de)
AT (1) ATE112416T1 (de)
DE (1) DE69104319T2 (de)
ES (1) ES2060268T3 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0532019B1 (de) * 1991-09-13 1997-12-29 Canon Kabushiki Kaisha Halbleiter-Elektronenemittierende Einrichtung
JP3255960B2 (ja) * 1991-09-30 2002-02-12 株式会社神戸製鋼所 冷陰極エミッタ素子
KR100291911B1 (ko) * 1994-07-26 2001-09-17 김순택 반도체발광소자를이용한표시소자
JP2946189B2 (ja) * 1994-10-17 1999-09-06 キヤノン株式会社 電子源及び画像形成装置、並びにこれらの活性化方法
US5592053A (en) * 1994-12-06 1997-01-07 Kobe Steel Usa, Inc. Diamond target electron beam device
US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6882100B2 (en) 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
JPWO2010046997A1 (ja) * 2008-10-24 2012-03-15 株式会社アドバンテスト 電子デバイスおよび製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
GB2109159B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
JP2788243B2 (ja) * 1988-02-27 1998-08-20 キヤノン株式会社 半導体電子放出素子及び半導体電子放出装置
DE69009357T2 (de) * 1989-09-07 1994-10-06 Canon Kk Elektronenemittierende Halbleitervorrichtung.

Also Published As

Publication number Publication date
JPH0512988A (ja) 1993-01-22
EP0481419A3 (en) 1992-05-13
EP0481419A2 (de) 1992-04-22
US5414272A (en) 1995-05-09
DE69104319D1 (de) 1994-11-03
EP0481419B1 (de) 1994-09-28
DE69104319T2 (de) 1995-02-09
ES2060268T3 (es) 1994-11-16

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties