ES2060268T3 - Elemento semiconductor emisor de electrones. - Google Patents

Elemento semiconductor emisor de electrones.

Info

Publication number
ES2060268T3
ES2060268T3 ES91117540T ES91117540T ES2060268T3 ES 2060268 T3 ES2060268 T3 ES 2060268T3 ES 91117540 T ES91117540 T ES 91117540T ES 91117540 T ES91117540 T ES 91117540T ES 2060268 T3 ES2060268 T3 ES 2060268T3
Authority
ES
Spain
Prior art keywords
region
carrier concentration
semiconductor element
issuer
element electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91117540T
Other languages
English (en)
Inventor
Nobuo C O Canon Kabus Watanabe
Masahiko C O Canon Kab Okunuki
Takeo C O Canon Kabu Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2060268T3 publication Critical patent/ES2060268T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

UN ELEMENTO DE EMISION SEMICONDUCTOR PROVISTO DE UNA JUNTA SCHOTTKY EN LA SUPERFICIE DE UN SEMICONDUCTOR, QUE COMPRENDE UNA PRIMERA REGION PROVISTA DE UNA PRIMERA CONCENTRACION PORTADORA, OTRA SEGUNDA REGION PROVISTA DE UNA SEGUNDA CONCENTRACION PORTADORA Y UNA TERCERA REGION PROVISTA DE UNA TERCERA CONCENTRACION PORTADORA. TODAS LAS REGIONES ESTAN SITUADAS POR DEBAJO DE UN ELECTRODO QUE FORMA LA JUNTA SCHOTTKY. LAS TRES CONCENTRACIONES PORTADORAS SATISFACEN LA CONDICION DE QUE LA PRIMERA CONCENTRACION PORTADORA DE LA PRIMERA REGION ES MAYOR QUE LA SEGUNDA CONCENTRACION PORTADORA DE LA SEGUNDA REGION, Y QUE, LA SEGUNDA CONCENTRACION PORTADORA DE LA SEGUNDA REGION ES MAYOR QUE LA TERCERA CONCENTRACION PORTADORA DE LA TERCERA REGION. LAS TRES REGIONES TIENEN UNA ESTRUCTURA TAL QUE AL MENOS UNA SEGUNDA REGION PROVISTA DE LA SEGUNDA CONCENTRACION PORTADORA ESTA SITUADA DENTRO DE LA TERCERA REGION DE LA TERCERA CONCENTRACION PORTADORA, Y QUE AL MENOS UNA PRIMERA REGION PROVISTA DE LA PRIMERA CONCENTRACION PORTADORA ESTA SITUADA DENTRO DE UNA SEGUNDA REGION PROVISTA DE LA SEGUNDA CONCENTRACION PORTADORA.
ES91117540T 1990-10-13 1991-10-14 Elemento semiconductor emisor de electrones. Expired - Lifetime ES2060268T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27391190 1990-10-13
JP3249214A JPH0512988A (ja) 1990-10-13 1991-09-27 半導体電子放出素子

Publications (1)

Publication Number Publication Date
ES2060268T3 true ES2060268T3 (es) 1994-11-16

Family

ID=26539160

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91117540T Expired - Lifetime ES2060268T3 (es) 1990-10-13 1991-10-14 Elemento semiconductor emisor de electrones.

Country Status (6)

Country Link
US (1) US5414272A (es)
EP (1) EP0481419B1 (es)
JP (1) JPH0512988A (es)
AT (1) ATE112416T1 (es)
DE (1) DE69104319T2 (es)
ES (1) ES2060268T3 (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0532019B1 (en) * 1991-09-13 1997-12-29 Canon Kabushiki Kaisha Semiconductor electron emission device
JP3255960B2 (ja) * 1991-09-30 2002-02-12 株式会社神戸製鋼所 冷陰極エミッタ素子
KR100291911B1 (ko) * 1994-07-26 2001-09-17 김순택 반도체발광소자를이용한표시소자
JP2946189B2 (ja) * 1994-10-17 1999-09-06 キヤノン株式会社 電子源及び画像形成装置、並びにこれらの活性化方法
US5592053A (en) * 1994-12-06 1997-01-07 Kobe Steel Usa, Inc. Diamond target electron beam device
US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
KR20110042188A (ko) * 2008-10-24 2011-04-25 가부시키가이샤 어드밴티스트 전자 디바이스 및 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
GB2109159B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
JP2788243B2 (ja) * 1988-02-27 1998-08-20 キヤノン株式会社 半導体電子放出素子及び半導体電子放出装置
EP0416626B1 (en) * 1989-09-07 1994-06-01 Canon Kabushiki Kaisha Electron emitting semiconductor device

Also Published As

Publication number Publication date
EP0481419B1 (en) 1994-09-28
ATE112416T1 (de) 1994-10-15
US5414272A (en) 1995-05-09
EP0481419A3 (en) 1992-05-13
JPH0512988A (ja) 1993-01-22
DE69104319T2 (de) 1995-02-09
EP0481419A2 (en) 1992-04-22
DE69104319D1 (de) 1994-11-03

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