ATE116479T1 - Halbleiterherstellungsverfahren unter verwendung eines maskenersatzes und dotierstoffundurchlässiger gebiete. - Google Patents

Halbleiterherstellungsverfahren unter verwendung eines maskenersatzes und dotierstoffundurchlässiger gebiete.

Info

Publication number
ATE116479T1
ATE116479T1 AT87302480T AT87302480T ATE116479T1 AT E116479 T1 ATE116479 T1 AT E116479T1 AT 87302480 T AT87302480 T AT 87302480T AT 87302480 T AT87302480 T AT 87302480T AT E116479 T1 ATE116479 T1 AT E116479T1
Authority
AT
Austria
Prior art keywords
dopant
mask
production process
semiconductor production
impermeable areas
Prior art date
Application number
AT87302480T
Other languages
English (en)
Inventor
Theodore G Hollinger
Original Assignee
Advanced Power Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Power Technology filed Critical Advanced Power Technology
Application granted granted Critical
Publication of ATE116479T1 publication Critical patent/ATE116479T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Light Receiving Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT87302480T 1986-03-21 1987-03-23 Halbleiterherstellungsverfahren unter verwendung eines maskenersatzes und dotierstoffundurchlässiger gebiete. ATE116479T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/842,771 US4748103A (en) 1986-03-21 1986-03-21 Mask-surrogate semiconductor process employing dopant protective region

Publications (1)

Publication Number Publication Date
ATE116479T1 true ATE116479T1 (de) 1995-01-15

Family

ID=25288204

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87302480T ATE116479T1 (de) 1986-03-21 1987-03-23 Halbleiterherstellungsverfahren unter verwendung eines maskenersatzes und dotierstoffundurchlässiger gebiete.

Country Status (7)

Country Link
US (1) US4748103A (de)
EP (1) EP0238362B1 (de)
JP (1) JP2575378B2 (de)
KR (1) KR960000387B1 (de)
AT (1) ATE116479T1 (de)
CA (2) CA1253262A (de)
DE (1) DE3750909T2 (de)

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US5182234A (en) * 1986-03-21 1993-01-26 Advanced Power Technology, Inc. Profile tailored trench etch using a SF6 -O2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen
JP2615667B2 (ja) * 1987-09-28 1997-06-04 日産自動車株式会社 Ｍｏｓ電界効果トランジスタの製造方法
JPH0783122B2 (ja) * 1988-12-01 1995-09-06 富士電機株式会社 半導体装置の製造方法
US4970173A (en) * 1989-07-03 1990-11-13 Motorola, Inc. Method of making high voltage vertical field effect transistor with improved safe operating area
US5155052A (en) * 1991-06-14 1992-10-13 Davies Robert B Vertical field effect transistor with improved control of low resistivity region geometry
EP0534530B1 (de) * 1991-09-23 2000-05-03 Koninklijke Philips Electronics N.V. Verfahren zum Herstellen einer Anordnung, bei dem ein Stoff in einen Körper implantiert wird
US5297001A (en) * 1992-10-08 1994-03-22 Sundstrand Corporation High power semiconductor assembly
US5395777A (en) * 1994-04-06 1995-03-07 United Microelectronics Corp. Method of producing VDMOS transistors
US5631484A (en) * 1995-12-26 1997-05-20 Motorola, Inc. Method of manufacturing a semiconductor device and termination structure
GB2323703B (en) * 1997-03-13 2002-02-13 United Microelectronics Corp Method to inhibit the formation of ion implantation induced edge defects
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
US6218701B1 (en) 1999-04-30 2001-04-17 Intersil Corporation Power MOS device with increased channel width and process for forming same
US6819089B2 (en) 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
US6828609B2 (en) * 2001-11-09 2004-12-07 Infineon Technologies Ag High-voltage semiconductor component
US20040036131A1 (en) * 2002-08-23 2004-02-26 Micron Technology, Inc. Electrostatic discharge protection devices having transistors with textured surfaces
US8080459B2 (en) * 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
US8629019B2 (en) 2002-09-24 2014-01-14 Vishay-Siliconix Method of forming self aligned contacts for a power MOSFET
US7569883B2 (en) * 2004-11-19 2009-08-04 Stmicroelectronics, S.R.L. Switching-controlled power MOS electronic device
ITMI20042243A1 (it) * 2004-11-19 2005-02-19 St Microelectronics Srl Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
CN101361193B (zh) 2006-01-18 2013-07-10 维西埃-硅化物公司 具有高静电放电性能的浮动栅极结构
US8435873B2 (en) * 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
US9230810B2 (en) 2009-09-03 2016-01-05 Vishay-Siliconix System and method for substrate wafer back side and edge cross section seals
JP2016051812A (ja) * 2014-08-29 2016-04-11 キヤノン株式会社 接合型電界効果トランジスタの製造方法、半導体装置の製造方法、撮像装置の製造方法、接合型電界効果トランジスタ及び撮像装置
CN111106012B (zh) * 2019-12-20 2022-05-17 电子科技大学 一种实现半导体器件局域寿命控制的方法

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Also Published As

Publication number Publication date
US4748103A (en) 1988-05-31
JPS62279677A (ja) 1987-12-04
KR870009492A (ko) 1987-10-27
CA1253262A (en) 1989-04-25
EP0238362A2 (de) 1987-09-23
DE3750909D1 (de) 1995-02-09
CA1277437C (en) 1990-12-04
DE3750909T2 (de) 1995-05-11
KR960000387B1 (ko) 1996-01-05
JP2575378B2 (ja) 1997-01-22
EP0238362A3 (en) 1988-11-30
EP0238362B1 (de) 1994-12-28

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