ATE120806T1 - Verfahren zum beschichten von substraten mit verbindungen auf siliziumbasis. - Google Patents

Verfahren zum beschichten von substraten mit verbindungen auf siliziumbasis.

Info

Publication number
ATE120806T1
ATE120806T1 AT90917735T AT90917735T ATE120806T1 AT E120806 T1 ATE120806 T1 AT E120806T1 AT 90917735 T AT90917735 T AT 90917735T AT 90917735 T AT90917735 T AT 90917735T AT E120806 T1 ATE120806 T1 AT E120806T1
Authority
AT
Austria
Prior art keywords
silicon
based compounds
coating substrates
sputtering
troublesome
Prior art date
Application number
AT90917735T
Other languages
English (en)
Inventor
Jesse D Wolfe
Carolynn Boehmler
James J Hofmann
Original Assignee
Boc Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Inc filed Critical Boc Group Inc
Application granted granted Critical
Publication of ATE120806T1 publication Critical patent/ATE120806T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT90917735T 1989-11-08 1990-11-07 Verfahren zum beschichten von substraten mit verbindungen auf siliziumbasis. ATE120806T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/433,690 US5047131A (en) 1989-11-08 1989-11-08 Method for coating substrates with silicon based compounds

Publications (1)

Publication Number Publication Date
ATE120806T1 true ATE120806T1 (de) 1995-04-15

Family

ID=23721176

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90917735T ATE120806T1 (de) 1989-11-08 1990-11-07 Verfahren zum beschichten von substraten mit verbindungen auf siliziumbasis.

Country Status (11)

Country Link
US (1) US5047131A (de)
EP (1) EP0502068B1 (de)
JP (1) JP3164364B2 (de)
KR (1) KR100199663B1 (de)
AT (1) ATE120806T1 (de)
AU (1) AU631710B2 (de)
CA (1) CA2069329C (de)
DE (1) DE69018479T2 (de)
DK (1) DK0502068T3 (de)
ES (1) ES2070343T3 (de)
WO (1) WO1991007519A1 (de)

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Also Published As

Publication number Publication date
AU6873091A (en) 1991-06-13
CA2069329A1 (en) 1991-05-09
DE69018479T2 (de) 1995-12-14
JPH05501587A (ja) 1993-03-25
US5047131A (en) 1991-09-10
DE69018479D1 (de) 1995-05-11
CA2069329C (en) 2001-01-09
EP0502068B1 (de) 1995-04-05
DK0502068T3 (da) 1995-06-19
EP0502068A4 (en) 1993-04-28
KR100199663B1 (ko) 1999-06-15
ES2070343T3 (es) 1995-06-01
JP3164364B2 (ja) 2001-05-08
WO1991007519A1 (en) 1991-05-30
EP0502068A1 (de) 1992-09-09
AU631710B2 (en) 1992-12-03

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Legal Events

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UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee